WO2008152132A3 - Apparatus and method for performing secondary ion mass spectroscopy - Google Patents

Apparatus and method for performing secondary ion mass spectroscopy Download PDF

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Publication number
WO2008152132A3
WO2008152132A3 PCT/EP2008/057477 EP2008057477W WO2008152132A3 WO 2008152132 A3 WO2008152132 A3 WO 2008152132A3 EP 2008057477 W EP2008057477 W EP 2008057477W WO 2008152132 A3 WO2008152132 A3 WO 2008152132A3
Authority
WO
WIPO (PCT)
Prior art keywords
secondary ion
mass spectroscopy
performing secondary
ion mass
sample
Prior art date
Application number
PCT/EP2008/057477
Other languages
French (fr)
Other versions
WO2008152132A2 (en
Inventor
Wilfried Vandervorst
Original Assignee
Interuniversitair Microelektronica Centrum Vzw (Imec)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum Vzw (Imec) filed Critical Interuniversitair Microelektronica Centrum Vzw (Imec)
Publication of WO2008152132A2 publication Critical patent/WO2008152132A2/en
Publication of WO2008152132A3 publication Critical patent/WO2008152132A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns
    • H01J49/14Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0802Field ionization sources
    • H01J2237/0807Gas field ion sources [GFIS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25Tubes for localised analysis using electron or ion beams
    • H01J2237/2505Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2516Secondary particles mass or energy spectrometry
    • H01J2237/2527Ions [SIMS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31749Focused ion beam

Abstract

An apparatus and method for performing Secondary Ion Mass Spectroscopy (SIMS) analysis of a sample are disclosed. The apparatus and method include a gas field ion source as the source of a first ion beam directed to a sample to sputter particles, which are optionally ionized by a laser beam and accelerated in a secondary ion beam towards a mass spectrometer. This apparatus and method allow obtaining SIMS characterization with a lateral resolution less than about 1nm.
PCT/EP2008/057477 2007-06-15 2008-06-13 Apparatus and method for performing secondary ion mass spectroscopy WO2008152132A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94442607P 2007-06-15 2007-06-15
US60/944,426 2007-06-15

Publications (2)

Publication Number Publication Date
WO2008152132A2 WO2008152132A2 (en) 2008-12-18
WO2008152132A3 true WO2008152132A3 (en) 2009-11-05

Family

ID=39967132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/057477 WO2008152132A2 (en) 2007-06-15 2008-06-13 Apparatus and method for performing secondary ion mass spectroscopy

Country Status (1)

Country Link
WO (1) WO2008152132A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354830B2 (en) 2016-04-06 2019-07-16 Carl Zeiss Microscopy, Llc Charged particle beam system
DE102018212403A1 (en) * 2018-07-25 2020-01-30 Carl Zeiss Microscopy, Llc Inspection system and inspection procedure for quality assessment of semiconductor structures
WO2020001954A1 (en) 2018-06-25 2020-01-02 Carl Zeiss Smt Gmbh Inspection system and inspection method to qualify semiconductor structures
US20240090111A1 (en) * 2022-09-09 2024-03-14 Applied Materials, Inc. Multiple plasma ion source for inline secondary ion mass spectrometry

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods

Also Published As

Publication number Publication date
WO2008152132A2 (en) 2008-12-18

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