WO2008152132A3 - Apparatus and method for performing secondary ion mass spectroscopy - Google Patents
Apparatus and method for performing secondary ion mass spectroscopy Download PDFInfo
- Publication number
- WO2008152132A3 WO2008152132A3 PCT/EP2008/057477 EP2008057477W WO2008152132A3 WO 2008152132 A3 WO2008152132 A3 WO 2008152132A3 EP 2008057477 W EP2008057477 W EP 2008057477W WO 2008152132 A3 WO2008152132 A3 WO 2008152132A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- secondary ion
- mass spectroscopy
- performing secondary
- ion mass
- sample
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
- H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
- H01J2237/2516—Secondary particles mass or energy spectrometry
- H01J2237/2527—Ions [SIMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Abstract
An apparatus and method for performing Secondary Ion Mass Spectroscopy (SIMS) analysis of a sample are disclosed. The apparatus and method include a gas field ion source as the source of a first ion beam directed to a sample to sputter particles, which are optionally ionized by a laser beam and accelerated in a secondary ion beam towards a mass spectrometer. This apparatus and method allow obtaining SIMS characterization with a lateral resolution less than about 1nm.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94442607P | 2007-06-15 | 2007-06-15 | |
US60/944,426 | 2007-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008152132A2 WO2008152132A2 (en) | 2008-12-18 |
WO2008152132A3 true WO2008152132A3 (en) | 2009-11-05 |
Family
ID=39967132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/057477 WO2008152132A2 (en) | 2007-06-15 | 2008-06-13 | Apparatus and method for performing secondary ion mass spectroscopy |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008152132A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10354830B2 (en) | 2016-04-06 | 2019-07-16 | Carl Zeiss Microscopy, Llc | Charged particle beam system |
DE102018212403A1 (en) * | 2018-07-25 | 2020-01-30 | Carl Zeiss Microscopy, Llc | Inspection system and inspection procedure for quality assessment of semiconductor structures |
WO2020001954A1 (en) | 2018-06-25 | 2020-01-02 | Carl Zeiss Smt Gmbh | Inspection system and inspection method to qualify semiconductor structures |
US20240090111A1 (en) * | 2022-09-09 | 2024-03-14 | Applied Materials, Inc. | Multiple plasma ion source for inline secondary ion mass spectrometry |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
-
2008
- 2008-06-13 WO PCT/EP2008/057477 patent/WO2008152132A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
Also Published As
Publication number | Publication date |
---|---|
WO2008152132A2 (en) | 2008-12-18 |
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