WO2008144762A3 - Organic electrodes and electronic devices - Google Patents

Organic electrodes and electronic devices Download PDF

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Publication number
WO2008144762A3
WO2008144762A3 PCT/US2008/064431 US2008064431W WO2008144762A3 WO 2008144762 A3 WO2008144762 A3 WO 2008144762A3 US 2008064431 W US2008064431 W US 2008064431W WO 2008144762 A3 WO2008144762 A3 WO 2008144762A3
Authority
WO
WIPO (PCT)
Prior art keywords
gate
gate material
drain
source
electronic devices
Prior art date
Application number
PCT/US2008/064431
Other languages
French (fr)
Other versions
WO2008144762A2 (en
Inventor
Mathew K Mattai
Thomas N Jackson
Original Assignee
Plextronics Inc
Univ Pennsylvania
Mathew K Mattai
Thomas N Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plextronics Inc, Univ Pennsylvania, Mathew K Mattai, Thomas N Jackson filed Critical Plextronics Inc
Publication of WO2008144762A2 publication Critical patent/WO2008144762A2/en
Publication of WO2008144762A3 publication Critical patent/WO2008144762A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Thin Film Transistor (AREA)

Abstract

A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one first gate material disposed on the gate insulator second side; wherein the first gate material does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the transistor further comprises a second gate material disposed away from the second side so that the first gate material is between the gate insulator and the second gate material. The second gate material can comprise a metal. The second gate material can have a higher conductivity than the first gate material. The second gate material can substantially overlap with the source or the drain. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. Applications included printed electronics.
PCT/US2008/064431 2007-05-21 2008-05-21 Organic electrodes and electronic devices WO2008144762A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93935207P 2007-05-21 2007-05-21
US60/939,352 2007-05-21

Publications (2)

Publication Number Publication Date
WO2008144762A2 WO2008144762A2 (en) 2008-11-27
WO2008144762A3 true WO2008144762A3 (en) 2009-03-19

Family

ID=39615642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/064431 WO2008144762A2 (en) 2007-05-21 2008-05-21 Organic electrodes and electronic devices

Country Status (1)

Country Link
WO (1) WO2008144762A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2466495B (en) 2008-12-23 2013-09-04 Cambridge Display Tech Ltd Method of fabricating a self-aligned top-gate organic transistor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
US20050212014A1 (en) * 2004-03-26 2005-09-29 Masahiro Horibe Semiconductor device and semiconductor sensor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
US20050212014A1 (en) * 2004-03-26 2005-09-29 Masahiro Horibe Semiconductor device and semiconductor sensor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Also Published As

Publication number Publication date
WO2008144762A2 (en) 2008-11-27

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