WO2008136586A1

WO2008136586A1 - Gas supplying apparatus and equipment for etching substrate edge having the same

Info

Publication number: WO2008136586A1
Application number: PCT/KR2008/002352
Authority: WO
Inventors: Kwan Goo Rha; Jung Hee Lee; Chul Hee Jang; Hyang Joo Lee; Dong Wan Kim
Original assignee: Sosul Co., Ltd.
Priority date: 2007-05-08
Filing date: 2008-04-25
Publication date: 2008-11-13
Also published as: KR101339700B1; TWI474393B; KR20080098985A; TW200910449A

Abstract

Provided are a gas supplying apparatus and an equipment for etching a substrate edge having the same. The gas supplying apparatus for supplying a gas to a chamber having a reaction compartment includes: a gas spraying unit for spraying gas to the reaction compartment; a gas storage unit for storing the gas; first and second extension passages provided between the gas spraying unit and the gas storage unit; and a leakage preventing unit provided to a connection region of the first and second extension passages to prevent leakage of the gas. The passage through which a gas is provided to the reaction compartment of the chamber is positioned inside the lateral wall of the chamber to prevent damage thereof, and leakage of the gas resulting therefrom can be prevented. An exhaust unit capable of exhausting a toxic gas to the outside is provided on one side of a passage connection portion connecting the passages in case the toxic gas leaks and, therefore, leakage of the toxic gas can be prevented.

Description

GAS SUPPLYING APPARATUS AND EQUIPMENT FOR ETCHING SUBSTRATE EDGE HAVING THE SAME

Technical Field

[1] The present disclosure relates to a gas supplying apparatus and an equipment for etching substrate edge having the same, and more particularly, to a gas supplying apparatus capable of blocking leakage of a toxic gas which is used in a semiconductor device manufacturing process in advance, and an equipment for etching substrate edge having the same. Background Art

[2] Generally, devices or circuit patterns are not formed in an edge region of a semiconductor substrate since the edge region is used for conveying the semiconductor substrate. However, undesired layers or particles can be deposited on the edge region of the semiconductor substrate during manufacturing processes of semiconductor devices and circuit patterns. If the manufacturing processes of semiconductor devices and circuit patterns are continued without removing the undesired layers or particles from the edge region of the semiconductor substrate, the semiconductor substrate can be deformed, or the yield of the manufacturing can be reduced. In addition, it may be difficult to align the semiconductor substrate due to the undesired layers or particles.

[3] Therefore, the undesired layers or particles should be removed through a predetermined post process. For this purpose, in a related art, the undesired layers or particles on the substrate edge region have been removed through a wet etching process using chemicals. Recently, however, plasma are locally generated at the substrate edge region to remove the undesired layer or particles on the edge region.

[4] A process gas provided for etching the substrate edge region using plasma is a toxic gas. The toxic gas is used for depositing a semiconductor layer, a conductive layer, and an insulation layer on a substrate, or etching these layers as well as for an apparatus for etching a substrate edge region. If a leakage of the toxic gas occurs, it is fatal not only to an environment but also to an operator.

[5] The toxic gas is transferred through pipes, and the pipes are connected by predetermined connection portions. Accordingly, if some of the connection portions of the pipes are defective or damaged, the toxic gas leaks to the outside. Disclosure of Invention Technical Problem

[6] The present invention provides a gas supplying apparatus capable of preventing leakage of a toxic gas by providing an exhaust portion exhausting the toxic gas on one side of a connection portion which connects pipes in case the toxic gas leaks, and an equipment for etching a substrate edge having the same. Technical Solution

[7] In accordance with an exemplary embodiment, a gas supplying apparatus for supplying a gas to a chamber having a reaction compartment includes: a gas spraying unit configured to spray a gas to the reaction compartment; a gas storage unit configured to store the gas; first and second extension passages between the gas spraying unit and the gas storage unit; and a leakage preventing unit provided to a connection region of the first and second extension passages to prevent leakage of the gas.

[8] The leakage preventing unit may include a first body including a first through hole connected to the first extension passage, a second body sealed to the first body, connected to the second extension passage, and including a second through hole configured to communicate with the first through hole, and a gas exhaust unit provided on outer peripheries of the first and second through holes.

[9] The gas exhaust unit may include a gas exhaust groove formed in a ring shape to at least one of the first and second bodies.

[10] The chamber may include an upper chamber portion and a lower chamber portion de- tachably coupled to each other, the first extension passage may be provided inside a wall surface of the lower chamber portion, and the second extension passage may be provided inside a wall surface of the upper chamber portion.

[11] The leakage preventing unit may include a gas exhaust groove provided in a coupling surface region of at least one of the upper chamber portion and the lower chamber portion.

[12] The gas supplying apparatus may further include an exhaust passage configured to communicate with the gas exhaust groove, and an exhaust pump connected to the exhaust passage. A pressure inside the gas exhaust groove may be lower than pressures of the first and second extension passages. The gas supplying apparatus may further include at least one O-ring provided to at least one of an inside region and an outside region of the gas exhaust groove.

[13] In accordance with another exemplary embodiment, an equipment for etching a substrate edge includes: a chamber including an upper chamber portion and a lower chamber portion detachably coupled to each other to provide a reaction compartment; a mask part provided in the reaction compartment; a substrate support portion provided below the mask part; and a process gas supply unit including first and second extension passages having at least a portion provided inside wall surfaces of the lower and upper chamber portions, the first and second extension passages communicating with each other, and a leakage preventing unit provided in a communication region of the first and second extension passages, the process gas supply unit being configured to supply a process gas.

[14] The leakage preventing unit may include a first body including a first through hole provided in a detachment surface of the lower chamber portion and connected to the first extension passage; a second body including a second through hole provided in a detachment surface of the upper chamber portion and connected to the second extension passage; and a gas exhaust unit provided on outer peripheries of the first and second through holes. The gas exhaust unit may include a gas exhaust groove formed in a ring shape to at least one of the first and second bodies. The gas exhaust unit may include an exhaust passage configured to communicate with the gas exhaust groove, and an exhaust pump connected to the exhaust passage.

[15] Each of the first and second bodies may be manufactured in a plate shape, and concave grooves into which the first body and the second body are inserted may be formed in detachment surface regions of the upper chamber portion and the lower chamber portion.

[16] The leakage preventing unit may include a gas exhaust groove formed in a detachment surface region of at least one of the upper chamber portion and the lower chamber portion. The leakage preventing unit may further include an exhaust passage configured to communicate with the gas exhaust groove, and an exhaust pump connected to the exhaust passage.

[17] A pressure inside the gas exhaust groove is lower than pressures of the first and second extension passages.

[18] The equipment may further include at least one O-ring provided to at least one of an inside region and an outside region of the gas exhaust groove.

[19] The process gas supply unit may further include a process gas storage unit provided below the lower chamber portion to supply a process gas to the first extension passage.

[20] The process gas supply unit may further include a injection nozzle unit provided to a lateral sidewall region of the mask part, and a injection passage configured to connect the injection nozzle unit with the extension passage.

[21] The equipment may further include an inert gas supply unit including: a storage unit configured to store an inert gas; an extension passage extending to one of an inside region of a wall surface and an adjacent region of the wall surface of the chamber; a injection passage connected to the extension passage and extending to an inside region of the mask part; and a spray nozzle connected to the injection passage and provided on a lower surface of the mask part.

[22] The equipment may further include a plasma generator configured to generate plasma in a lateral region of the mask part and the substrate support portion. [23] The equipment may further include a shield part forming a separation compartment in the chamber. [24] The equipment may further include a Faraday shield provided on an outer periphery of the shield part. [25] The equipment may further include an upper electrode provided to an edge region of the mask part.

Advantageous Effects

[26] In accordance with exemplary embodiments, a passage, through which a gas provided to the reaction compartment of the chamber flows, is positioned inside the lateral wall of the chamber to prevent damage of the passage, and thus prevent leakage of the gas.

[27] Also, in accordance with the exemplary embodiments, an exhaust groove is formed in the periphery of the connection region between the passages extending to the inside of the chamber to thereby provide the exhaust portion that can exhaust a toxic gas to the outside during leakage of the toxic gas, which prevents leakage of the toxic gas.

[28] Further, in accordance with the exemplary embodiments, a process gas is sprayed to the substrate edge region through the mask part, and the antenna for plasma generation is positioned to the lateral side of the substrate to generate high density plasma, thereby concentrating a process gas in a plasma state on the substrate edge region. Brief Description of the Drawings

[29] Exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

[30] FIG. 1 is a schematic cross-sectional view of a plasma etching equipment in accordance with a first exemplary embodiment;

[31] FIG. 2 is a perspective view explaining a process gas supply unit of a plasma etching chamber in accordance with the first exemplary embodiment;

[32] FIG. 3 is a plan view explaining the process gas supply unit in accordance with the first exemplary embodiment;

[33] FIG. 4 is a cross-sectional view explaining the process gas supply unit in accordance with the first exemplary embodiment;

[34] FIG. 5 is a perspective view explaining an inert gas supply unit in accordance with the first exemplary embodiment;

[35] FIG. 6 is a plan view explaining an inert gas supply unit in accordance with the first exemplary embodiment;

[36] FIG. 7 is a cross-sectional view explaining an inert gas supply unit in accordance with the first exemplary embodiment;

[37] FIG. 8 is a schematic cross-sectional view of a plasma etching equipment in ac- cordance with a second exemplary embodiment;

[38] FIG. 9 is a perspective view explaining a process gas supply unit of a plasma etching chamber in accordance with the second exemplary embodiment; and

[39] FIG. 10 is a cross-sectional view explaining a leakage exhaust unit in accordance with the second exemplary embodiment. Best Mode for Carrying Out the Invention

[40] Hereinafter, specific embodiments will be described in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Like reference numerals refer to like elements throughout.

[41] FIG. 1 is a schematic cross-sectional view of a plasma etching equipment in accordance with a first exemplary embodiment.

[42] FIG. 2 is a perspective view explaining a process gas supply unit of a plasma etching chamber in accordance with the first exemplary embodiment, FIG. 3 is a plan view explaining the process gas supply unit in accordance with the first exemplary embodiment, and FIG. 4 is a cross-sectional view explaining the process gas supply unit in accordance with the first exemplary embodiment.

[43] FIG. 5 is a perspective view explaining an inert gas supply unit in accordance with the first exemplary embodiment, FIG. 6 is a plan view explaining an inert gas supply unit in accordance with the first exemplary embodiment, and FIG. 7 is a cross- sectional view explaining an inert gas supply unit in accordance with the first exemplary embodiment.

[44] Referring to FIGS. 1 through 7, a substrate edge etching equipment in accordance with the exemplary embodiment includes a chamber 100; a mask part 300 disposed to be adjacent to the non-etching region of a substrate 10; a substrate support portion 500 configured to expose the edge region of the substrate 10 and support the substrate 10; a process gas supply unit 700 which passes through the sidewall of the chamber 100 and extends from the lower portion of the chamber 100 toward the upper portion of the chamber 100, and is configured to supply a process gas to the inside of the chamber 100; an inert gas supply unit 800 which passes through the sidewall of the chamber 100 and extends from the lower portion of the chamber 100 toward the upper portion of the chamber 100, and is configured to supply an inert gas into the chamber 100; and a plasma generator 400 configured to generate plasma inside the chamber 100. Also, as shown in the drawing, the substrate edge etching equipment further includes a shield part 200 dividing the inside of the chamber 100 into a reaction compartment A and a separation compartment D, and a Faraday shield 600 provided between the mask part 300 and the plasma generator 400. The mask part 300 can operate as a gas distributing plate.

[45] The process gas of the process gas supply unit 700 and the inert gas of the inert gas supply unit 800 are sprayed into a reaction compartment A inside the chamber 100 through the mask part 300 as illustrated in FIG. 1.

[46] The chamber 100 includes lower and upper chamber portions 110 and 120 including heating units 112 and 122.

[47] First, the lower chamber portion 110 includes: an approximately hexahedral lower body 111 whose inside is empty; a lower heating unit 112 provided at least on a sidewall of the lower body 111; and a cylindrical through hole 113 provided in an upper wall of the lower body 111. That is, the lower body 111 is manufactured in a shape of quadrangular column having quadrangular upper and lower surfaces, and four sidewalls. Of course, the lower body 111 is not limited thereto but may have a cylindrical shape or a polygonal shape. Each surface may be also manufactured in a polygonal shape. The substrate support portion 500 supporting the substrate 10 is elevated through the inner empty space of the lower body 111. Though not shown in one side of the lower body 111, a gate valve loading/unloading the substrate 10, and an exhaust unit exhausting impurities inside the chamber 100 are provided. The lower chamber portion 110 can be connected to another chamber (not shown) performing another process through the gate valve (not shown).

[48] The lower heating unit 112 to heat the chamber 100 is provided at least at a portion of the sidewall of the lower body 111. Referring to FIG. 1, the lower heating unit 112 is located inside the sidewall. The lower heating unit 112 heats the lower body 111 and controls temperatures to prevent the temperature inside the lower body 111 from drastically changing due to external influence. The lower heating unit 112 may be an electric heater. The lower heating unit 112 may be located on an outer surface of the lower body 111.

[49] The heating unit 112 is located inside the lower body 111, that is, inside the sidewall or on the lateral portion of the body to concentratively heat the edge region of the substrate 10 from the step of loading the substrate 10. Therefore, reactivity can be improved while the edge region of the substrate is etched.

[50] The diameter of the through hole 113 provided in the upper wall of the lower body

111 may be greater than the diameter of the substrate 10. The substrate support portion 500 can elevate to the outside of the lower body 111 through the through hole 113.

[51] Meanwhile, the upper chamber portion 120 includes an approximately hexahedral upper body 121, an upper heating unit 122 provided to the upper body 121, and a concave groove portion 123 provided in the upper body 121. [52] The shape of the upper body 121 is not limited thereto, but is manufactured in a similar shape to that of the lower body 111 of the lower chamber portion 110. The upper body 121 may be manufactured in a shape that can cover the region of the through hole of the lower body 111. That is, the lower surface of the upper body 121 is closely attached on the upper surface of the lower body 111.

[53] The concave groove portion 123 provided to the upper body 121 communicates with the through hole 113 of the lower body 111. For this purpose, the concave groove portion 123 is manufactured in a shape including an opening provided in the lower wall of the upper body 121 and recessed toward an upper wall as illustrated in FIGS. 1 and 3. The diameter of the concave groove portion 123 may be greater than that of the through hole 113. In the exemplary embodiment, the substrate 10 is located inside the concave groove portion 123 of the upper chamber portion 120 through elevation of the substrate support portion 500. Plasma is concentratively generated in a region inside the concave groove portion 123 to remove a layer and particles on the substrate edge region.

[54] The upper heating units 122 are provided to portions of the peripheral region of the concave groove portion 123 of the upper body 121. The upper heating units 122 may be located at portions of the upper wall of the upper body 121. Like the lower heating units 112 provided to the lower body 111, the upper heating units 122 heat the substrate 10 to improve plasma reactivity of the substrate edge region. The heating temperature of the lower and upper heating units 112 and 122 may be approximately 80 degrees. Of course, the temperature is not limited thereto but the heating may be performed within the temperature range of 50 through 150 degrees. Of course, electric heating wires used as the upper heating units 122 are uniformly arranged in the upper wall of the upper body 121 in the drawing. However, the arrangement of the electric heating wires is not limited thereto, but they can be concentrated on a region corresponding to the substrate edge region. Also, the upper heating units 122 can receive power through a separate power supply unit (not shown) independent of the lower heating units 112. With this configuration, a temperature difference can be reduced between the lower region and the upper region in the chamber 100. However, the configuration of the heating units is not limited thereto but the upper heating units 122 and the lower heating units 112 can receive power through a single power supply unit.

[55] Though not shown, the chamber 100 further includes an opening/closing unit (not shown) configured to open/close between the upper body 121 of the upper chamber portion 120 and the lower body 111 of the lower chamber portion 110. As described above, the chamber 100 is divided into the upper region and the lower region, and the chamber 100 is manufactured by coupling these regions to each other, and thereby the maintenance of the chamber 100 can be easily performed. [56] The process gas supply unit 700 transfers a process gas through the inner wall of the lower chamber portion 110 and the upper chamber portion 120, and supplies the transferred gas to the reaction compartment A, that is, the substrate edge region inside the chamber 100.

[57] The process gas supply unit 700 includes: a lower extension passage 710; an upper extension passage 720; a leakage preventing unit 730; a gas storage unit 740; an injection passage 750; and an injection nozzle unit 760. Also, though not shown, the process gas supply unit 700 can further include a controller configured to control the flow rate and pressure of a process gas supplied to the inside of the chamber 100.

[58] The lower extension passage 710 is manufactured as a pipe, and a portion of the pipe is inserted and mounted in the lateral wall region of the lower chamber portion 110. Accordingly, the lower extension passage 710 is provided in the inner sidewall of the lower chamber portion 110.

[59] The upper extension passage 720 is also manufactured as a pipe, and a portion of the pipe is inserted and mounted in the inside of the wall surface of the upper chamber portion 120. The upper extension passage 720 is provided inside the wall surface of the upper chamber portion 120. The lower extension passage 710 and the upper extension passage 720 communicate with each other when the lower chamber portion 110 and the upper chamber portion 120 are coupled.

[60] Of course, the structure is not limited thereto, and thus the lower extension passage

710 and the upper extension passage 720 can be integrally formed with the lower chamber portion 110 and the upper chamber portion 120, respectively. That is, passages (through-grooves or holes) may be formed in the lower chamber portion 110 and the upper chamber portion 120, respectively, and used as the lower extension passage 710 and the upper extension passage 720.

[61] In the embodiment, the process gas storage unit 740 is provided in the lower region of the chamber 100. The process gas storage unit 740 is connected to the lower extension passage 710. The process gas is transferred to the upper region of the chamber 100 via the inside of the lateral side of the chamber 100 through the lower extension passage 710.

[62] As described above, the chamber 100 is divided into the lower chamber portion 110 and the upper chamber portion 120. Therefore, the passage through which the process gas is supplied is also divided into an upper portion and a lower portion. In the exemplary embodiment, a leakage preventing unit 730 is separately provided to a region where the lower chamber portion 110 and the upper chamber portion 120 couple to each other to connect between the two divided passages.

[63] The leakage preventing unit 730 includes: a lower body 730a; an upper body 730b sealed to and coupled to the lower body 730a; a lower through hole 731 provided in the lower body 730a and connected to the lower extension passage 710; an upper through hole 732 provided in the upper body 730b and connected to the upper extension passage 720; and a gas exhaust unit provided in the outer peripheral region of the lower and upper through holes 731 and 732.

[64] The gas exhaust unit (not shown) includes process gas exhaust groove 734, and further includes an exhaust passage 736 configured to communicate with the process gas exhaust groove 734 and an exhaust pump portion 737 connected to the exhaust passage. The leakage preventing unit 730 further includes a first O-ring portion 733 provided between the process gas exhaust groove 734 and the lower and upper through holes 731 and 732, and a second O-ring portion 735 provided to the outer peripheral region of the process gas exhaust groove 734.

[65] The lower body 730a is manufactured in an approximately quadrangular plate shape in the upper region of the lower chamber portion 110 as illustrated in FIG. 2. In addition, the upper body 730b is manufactured in an approximately quadrangular plate shape in the lower region of the upper chamber portion 120 as illustrated in FIG. 2. Further, concave groove portions in which the lower body 730a and the upper body 730b are mounted are provided in the lower chamber portion 110 and the upper chamber portion 120, respectively. Also, the lower body 730a and the upper body 730b may be coupled to the lower chamber portion 110 and the upper chamber portion 120, respectively, using coupling members.

[66] The lower through hole 731 and the upper through hole 732 are provided in the central regions of the lower body 730a and the upper body 730b. The lower extension passage 710 extends inside the lower through hole 731, and the upper extension passage 720 extends inside the upper through hole 732. Of course, the lower and upper extension passages 710 and 720 may be connected to the lower and upper through holes 731 and 732. The lower through hole 731 and the upper through hole 732 are coupled to communicate with each other. That is, when the lower chamber portion 110 and the upper chamber portion 120 are tightly coupled to each other, the lower through hole 731 and the upper through hole 732 are tightly coupled to each other. With this structure, a process gas provided through the lower extension passage 710 is provided to the upper through hole 732 through the lower through hole 731, and a process gas provided to the upper through hole 731 is provided to the upper extension passage 720.

[67] The first O-ring portion 733 and the second O-ring portion 735 having a greater diameter than the first O-ring portion 733 are provided between the lower body 730a and the upper body 730b. The first O-ring portion 733 primarily prevents process gas leakage between the lower through hole 731 and the upper through hole 732.

[68] Referring to FIGS. 2 through 4, the first O-ring portion 733 is provided along the outer periphery of the lower through hole 731. Also, the concave groove portion in which a portion of the first O-ring portion 733 is inserted is provided in the lower body 730a. Though not shown, the concave groove portion in which a portion of the first O- ring portion 733 is to be inserted may also be provided in the upper body 730b. Of course, the above described concave groove portion may not be provided.

[69] Referring to FIG. 3, a ring-shaped process gas exhaust groove 734 is formed along the outer side of the first O-ring portion 733. The process gas exhaust groove 734 is manufactured in a shape of concave groove in the lower body 730a as illustrated in FIG. 4. The process gas exhaust groove 734 can be used as a space in which leaked process gas is stored.

[70] The process gas exhaust groove 734 absorbs a process gas leaking to the outside of the first O-ring portion 733 to prevent the process gas from leaking to the outside. For this purpose, the pressure of the process gas exhaust groove 734 may be lower than the inner pressures of other regions (for example, the lower and upper extension passages 710 and 720, or the lower and upper through holes 731 and 732). For this purpose, the process gas exhaust groove 734 communicates with the exhaust passage 736 connected to the exhaust pump portion 737. Therefore, due to the operation of the exhaust pump portion 737, the process gas that has leaked into the process gas exhaust groove 734 is guided to a safe region along the exhaust passage 736 by the exhaust pump portion 737. Therefore, the process gas is prevented from leaking to the outside of the process gas exhaust groove 734. Of course, a sensor that can sense minute leakage of the process gas may be provided so that the exhaust pump portion 737 can operate only when the process gas leaks.

[71] Referring to FIG. 2, the exhaust passage 736 communicates in one side of the bottom or the lateral side of the process gas exhaust groove 734, extends in the lateral direction of the lower chamber portion 110, and is connected to the exhaust pump portion 737 provided in the outer side region of the lower chamber portion 110.

[72] In the above description, the process gas exhaust groove 734 is formed in the lower body 730a. However, the process gas exhaust groove 734 is not limited thereto but may be formed in the upper body 730b. Therefore, the exhaust passage 736 can be formed in the upper chamber portion 120. Also, process gas exhaust grooves 734 can be formed in both the lower and upper bodies 730a and 730b. Also, though a single process gas exhaust groove 734 is formed in the drawing, it is not limited thereto but a plurality of ring-shaped process gas exhaust grooves 734 can be provided.

[73] Also, referring to FIGS. 2 through 4, the second O-ring portion 735 is provided to the outer side of the process gas exhaust groove 734. The second O-ring portion 735 seals the region of the process gas exhaust groove 734 to prevent leakage of the process gas that may occur.

[74] In the exemplary embodiment, the first O-ring portion 733 is provided between the lower through hole 731 and the process gas exhaust groove 734, and the second O-ring portion 735 is provided to the outer side of the process gas exhaust groove 734. However, a plurality of O-ring portions may be further provided if needed.

[75] In the exemplary embodiment, the plurality of O-ring portions 733 and 735 are provided and the process gas exhaust groove 734 communicating with the exhaust passage 736 are provided within the leakage preventing unit 730 connecting the lower extension passage 710 with the upper extension passage 720 to prevent process gas leakage within the leakage preventing unit 730.

[76] Also, the upper extension passage 720 connected with the lower extension passage

710 by the leakage preventing unit 730 is connected to the injection passage 750 provided inside the reaction compartment A of the chamber 100. The process gas of the process gas storage unit 740 provided in the lower region of the chamber 100 can be sprayed into the reaction compartment of the chamber 100 through the lower extension passage 710, the leakage preventing unit 730, the upper extension passage 720, the injection passage 750, and the injection nozzle unit 760 provided to the end of the injection passage 750.

[77] As shown in FIG. 1, the injection passage 750 extends to the inside of the mask part

300, and the injection nozzle unit 760 is provided in the lateral wall region of the mask part 300. With this structure, the process gas can be provided to the plasma generation region (that is, the edge region of the substrate) of the reaction compartment. Of course, the position of the injection nozzle unit 760 is not limited thereto but may be located in various positions. For example, the injection nozzle unit may be provided on the outer side region of the mask part 300, that is, the upper wall surface of the upper chamber portion 120.

[78] As described above in the exemplary embodiment, most of the passages through which the process gas passes is located inside the chamber to prevent damage of the passages by an external impact, and thereby leakage of process gas can be prevented.

[79] Similarly to the above-described process gas supply unit 700, the inert gas supply unit 800 transfers an inert gas through the inner wall of the lower chamber portion 110 and the upper chamber portion 120, and supplies the transferred inert gas to a central region of a substrate (that is, a non-etching region of the substrate) which is adjacent to the mask part 300 through the mask part 300.

[80] The inert gas supply unit 800 includes: a lower extension passage 810 provided in the inner wall of the lower chamber portion 110; an upper extension passage 820 provided in the inner wall of the upper chamber portion 120; a passage connecting portion 830 configured to connect the lower extension passage 810 with the upper extension passage 820; an inert gas storage unit 840 connected to the lower extension passage 810; an injection passage 850 extending from the upper extension passage 820 toward the inside of the mask part 300; and an injection nozzle unit 860 provided at the end of the injection passage 850 to spray an inert gas to the reaction compartment A of the chamber 100. In descriptions of the inert gas supply unit 800 hereafter, overlapping portion with the process gas supply unit 700 will be omitted.

[81] Referring to FIGS. 5 through 7, the passage connecting portion 830 includes: a lower connection body 830a; an upper connection body 830b sealed to and coupled to the lower connection body 830a; a lower through hole 831 provided in the lower connection body 830a and connected to the lower extension passage 810; an upper through hole 832 provided in the upper connection body 830b and connected to the upper extension passage 820; and an O-ring portion 833 provided to the outer peripheral region of the lower and upper through holes 831 and 832. Also, the injection nozzle unit 860 is provided in a shape of a through hole in the lower surface of the mask part 300. In this way, the inert gas is sprayed to the lower surface region of the mask part 300, and a penetration of a process gas into the central region of the substrate 10 can be prevented.

[82] The shield part 200 is manufactured in a ring shape extending from the upper wall of the lower chamber portion 110 to the upper wall of the upper chamber portion 120 through the inside of the concave groove portion 123 of the upper chamber portion 120. The shied part 200 is disposed in the peripheral region of the edge of the through hole 113 of the lower chamber portion 110 to divide the chamber 100 including the upper chamber portion 120 and the lower chamber portion 110 into a separation compartment D and the reaction compartment A. The reaction compartment A is a space in which the substrate 10 is located, plasma is generated, and a process of etching the substrate edge region is performed. The separation compartment D is a space in which a portion of a plasma generator 400 generating plasma is located. The separation compartment D and the reaction compartment A may be isolated from each other by the shield part 200. For example, the separation compartment D can maintain an atmospheric pressure, and the reaction compartment A can maintain a vacuum.

[83] The reaction compartment A includes: an inner region of the shield part 200 surrounded by the upper wall of the upper chamber portion 120 and the shield part 200; and the inner space of the lower chamber portion 110. The separation compartment D includes the outside portion of the shield part 200 surrounded by the upper wall and the lateral wall of the upper chamber portion 120; the upper wall of the lower chamber portion 110; and the shield part 200. The shield part 200 may be manufactured using a material that can transmit high frequency energy to generate plasma inside the shield part 200. For example, the shield part 200 can be manufactured using insulating material, that is, alumina (A12O3).

[84] In the exemplary embodiment, the substrate 10 is elevated to the inside region of the shield part 200 by the substrate support portion 500, and plasma is generated in the inside region of the shield part 200, that is, in a space between the shield part 200 and the substrate support portion 500 to etch the edge region of the substrate 10.

[85] The shield part 200 includes a ring-shaped ring body portion 210 whose inside is empty, and upper and lower extension portions 220 and 230 provided to the upper and lower portions of the ring body portion 210, respectively. The upper extension portion 220 is coupled to the upper wall of the upper chamber portion 120, and the lower extension portion 230 is coupled to the upper wall of the lower chamber portion 110. The ring body portion is manufactured in a ring shape having a similar shape to that of the substrate 10. By doing this, a distance between the shield part 200 and the substrate 10 can be maintained constant. Plasma can be uniformly distributed over the substrate edge region. Here, the ring body portion 210 may be manufactured in a circular ring shape.

[86] The lower extension portion 230 is provided to the lower portion of the ring body portion 210, and extends to the outer region of the ring body portion 210. The upper extension portion 220 is provided to the upper portion of the ring body portion 210, and extends to the inner region of the ring body portion 210. Of course, the upper and lower extension portions are not limited thereto, but the lower extension portion 230 can extend to the inner region of the ring body portion 210 and the upper extension portion 220 can extend to the outer region of the ring body portion 210. The lower and upper extension portions 230 and 220 extending from the lower and upper portions of the ring body portion 210 are tightly attached to the lower chamber portion 110 and the upper chamber portion 120, respectively, so that pressures of the reaction compartment and the separation compartment can be kept to be different from each other. That is, the lower extension portion 230 and the upper extension portion 220 serve as sealing members sealing the reaction compartment.

[87] Also, the shield part 200 can be fixed to the lower chamber portion 110 or the upper chamber portion 120 by the lower extension portion 230 or the upper extension portion 220. Though not shown, a sealing member such as an O-ring for sealing the reaction compartment can be further provided to the lower chamber portion 110 and the upper chamber portion 120 that are in contact with the shield part 200. Referring to FIG. 1, the shield part 200 is located on the surfaces of the lower and upper chamber portions 110 and 120. However, the configuration is not limited thereto, but a predetermined concave groove can be formed in the surface regions of the lower and upper chamber portions 110 and 120 that are in contact with the shield part 200. The shield part 200 may be inserted into the concave groove to further improve a sealing reliability of the reaction compartment. Also, in the above description, the shield part 200 is manufactured separately from the upper and lower chamber portions 110 and 120. However, the shield part 200 can be integrally formed with the upper chamber portion 110 and the lower chamber portion 120.

[88] The above-described mask part 300 blocks plasma generation on the non-etching region of the substrate 10 which is located on the substrate support portion 500, that is, the central region of the substrate 10 to prevent etching of the non-etching region of the substrate. The mask part 300 blocks a region other than the edge region of the substrate 10. The mask part 300 is manufactured in a shape similar to that of the substrate 10. In the exemplary embodiment, the mask part 300 is manufactured in a circular plate shape. The mask part 300 may have a smaller size than the substrate 10. With this structure, the mask part 300 can selectively expose the edge region of the substrate 10. The substrate edge region exposed by the mask part 300 may be approximately 0.1 through 5 mm from the end of the substrate 10.

[89] With this structure, the edge region of the substrate where a layer or semiconductor patterns is not formed can be exposed. That is, when the exposed region is smaller than the above range, the exposed area of the substrate edge region is too small. When the exposed region is wider than the above range, a layer or patterns on the substrate central region (that is, a non-etching region) may be exposed. Of course, the size of the mask part 300 is not limited thereto, but may be equal to or greater than that of the substrate 10. Also, an inert gas can be injected at the inner region of the mask part 300 to prevent an etching gas in a plasma state from penetrating into the central region of the substrate inside the mask part 300.

[90] The mask part 300 is located in the reaction compartment inside the shield part 200.

The mask part 300 is provided to the bottom of the concave groove portion 123 of the upper chamber portion 120 (that is, the lower surface of the upper wall of the upper chamber portion 120) as illustrated in the drawing. The mask part 300 may be manufactured using a separate member and then attached on the bottom of the concave groove portion 123 through a coupling member. Of course, the mask part 300 is not limited thereto, but can be integrally manufactured with the upper chamber portion 120. As illustrated in the drawing, a passage through which a process gas and an inert gas are supplied is provided inside the mask part 300, the process gas is injected to the lateral wall of the mask part 300, and the inert gas is injected to the lower surface of the mask part 300.

[91] An upper electrode 310 can be provided to the end of the mask part 300 as illustrated. Ground power is applied to the upper electrode 310. Of course, the upper electrode is not limited thereto, but can be provided inside the mask part 300. Also, the mask part 300 can be used as the upper electrode. For this, an insulating layer is provided on one side of the mask part 300. The upper electrode 310 induces coupling of a bias power applied to the substrate support portion 500 to increase plasma density, and thus improve an etching rate of the substrate edge region. Since the upper electrode 310 is formed on the lateral wall of the mask part 300, the injection nozzle unit 760 injecting the process gas may be located below the upper electrode 310.

[92] The plasma generator 400 includes an antenna portion 410 and a power supply portion 420. The antenna portion 410 is provided inside the separation compartment D surrounded by the shield part 200, the upper chamber portion 120, and the lower chamber portion 110. The antenna portion 410 includes at least one coil, and the coil is provided to surround the shield part 200 N times. In the drawing, the coil surrounds the shield part 200 two times. Of course, the coil is not limited thereto, but can surround the shield part 200 more than two times. Also, coils may be overlapped, stacked or crossed with each other vertically and/or horizontally. Also, plasma can be effectively generated to the edge portion of the substrate 10 when the distance between the substrate 10 and the nearest antenna is in a range of approximately 2 through 10 cm. However, when the distance is less than 2 cm, plasma is generated up to the central portion of the substrate, so that unnecessary etching can be generated. On the other hand, when the distance exceeds 10 cm, it is difficult to generate high density plasma near the substrate edge.

[93] The power supply portion 420 is a unit for supplying RF power, and supplies high frequency waves to the antenna portion 410. The power supply portion 420 may be located outside the chamber 100. Only the antenna portion 410 of the plasma generator 400 may be located in the separation compartment inside the chamber 100, and the other elements may be located outside the chamber 100. In the exemplary embodiment, the antenna portion 410 is located inside the chamber 100, that is, in the separation compartment D adjacent to the reaction compartment A to generate and concentrate high density plasma in the reaction compartment adjacent to the antenna portion 410. The plasma can be generated in a circular ring shape in the reaction compartment inside the shield part 200 having a circular ring shape. Also, the antenna portion 410 is integrally formed with the chamber 100, so that the apparatus can be simplified and miniaturized. Power of 100 W through 3.0 KW may be supplied through the power supply portion 420. Also, the frequency of the power may be in a range of approximately 2 through 13.56 MHz.

[94] When the plasma power (high frequency power) is applied to the antenna portion

410, plasma is generated in the reaction compartment inside the shield part 200. The antenna portion 410 generates high density plasma in a region inside the shield part 200. High density plasma is generated in the region inside the shield part 200 by the antenna portion 410. Since the mask part 300 is provided in the region inside the shield part 200, the plasma is concentrated on a region between the mask part 300 and the shield part 200, that is, the region between the shield part 200 and the elevated substrate support portion 500.

[95] In the exemplary embodiment, the antenna portion 410 is located to the lateral region of the substrate 10 elevated by the substrate support portion 500, and the ground electrodes are disposed above and below the antenna portion 410. Therefore, the high density plasma can be uniformly distributed on the substrate edge region, and the plasma can be concentrated on the substrate edge region, so that the etching efficiency of the substrate edge region can be improved.

[96] The plasma generator 400 is not limited thereto, but capacitively coupled plasma

(CCP) generator, a hybrid type plasma generator, an electron cyclotron resonance (ECR) plasma generator, a surface wave plasma (SWP) generator or the like can be used.

[97] A predetermined connection hole (not shown) for connecting the power supply portion 420 with the antenna portion 410 is provided to the upper chamber portion 120. The power supply portion 420 extends through the connection hole and can be connected to the antenna portion 410 inside the reaction compartment of the upper chamber portion 120. Of course, a reversed case can be possible. Also, the plasma generator 400 may further include a matching unit (not shown) for impedance matching between the power supply portion 420 and the antenna portion 410. Also, heating units 112 and 122 are provided to the inner side or the lateral side of the chamber 100 in accordance with the exemplary embodiment. Therefore, a predetermined cooling member configured to prevent damage of the antenna portion 410 by the heating units 112 and 122 can be provided on one side region of the antenna portion 410.

[98] The Faraday shield 600 is located on the outer surface of the shield part 200 to concentrate plasma formed inside the shield part 200 on the substrate edge region. In the exemplary embodiment, the Faraday shield 600 may be provided in a space between the shield part 200 and the antenna portion 410. The faraday shield 600 prevents the plasma from being concentrated to the coil disposed at the antenna part using Faraday effect, so that plasma can be uniformly formed inside the chamber 100. Furthermore, the faraday shield 600 prevents local accumulation of etch byproducts and polymers at the position of the coil of the inner surface of the shield part 200, so that minimum amount of the etch byproducts and polymers can be uniformly accumulated in the entire inner surface of the process chamber. Therefore, the lifetime of the plasma etching apparatus can be increased, and particle formation due to irregular separation of impurities accumulated in the chamber during the process can be prevented. The Faraday shield 600 is grounded to a ground portion of the apparatus to minimize an undesired voltage generated between an antenna coil portion and the plasma, and to uniformly distribute the plasma on the entire surface of the shield part 200 while the plasma is generated.

[99] Though not shown, an insulating member for insulation can be provided between the

Faraday shield 600 and the antenna portion 410. The Faraday shield 600 may contact the outer surface of the shield part 200 to maintain a predetermined distance from the coil of the antenna portion generating plasma.

[100] The substrate support portion 500 is disposed in the reaction compartment of the chamber 100 and supports the substrate 10. The substrate support portion 500 is used to move the substrate 10 loaded into the lower chamber portion 110 to the concave groove portion 123 of the upper chamber 120 where the mask part 300 and the shield part 200 are located, or to move the substrate 10 elevated up to the concave groove portion 123 down to the lower chamber portion 110.

[101] The substrate support portion 500 includes: a substrate support chuck 520 configured to support the substrate 10; a driver 540 configured to move the substrate support chuck 520 up and down; and a bias power supply portion 550 configured to supply bias power to the substrate support chuck 520. Also, though not shown, the substrate support portion 500 further includes a lift pin. A predetermined through hole through which the lift pin moves up and down is formed in the substrate support chuck 520.

[102] The substrate support chuck 520 has a shape similar to that of the substrate 10, and is manufactured in a plate shape having a smaller size than the substrate 10. Accordingly, the lower edge region of the substrate 10 located on the substrate support chuck 520 can be exposed to a plasma generation space. A substrate heating unit 530 heating the substrate support chuck 520 is provided inside the substrate support chuck 520. The substrate heating unit 530 includes hot wires 531 provided inside the substrate support chuck 520, and a hot wire power supply unit 532 configured to supply power to the hot wires 531. Also, the hot wires of the substrate heating unit 530 may be concentrated on the edge region of the substrate support chuck 520. The hot wires can heat the edge region of the substrate located on the substrate support chuck 520 to improve reactivity of the substrate edge region. The heating temperate of the substrate heating unit 530 may be in a range of approximately 150 through 550 degrees. In the exemplary embodiment, the substrate support chuck 520 may be heated to a temperature of approximately 350 degrees using the substrate heating unit 530.

[103] The bias power supply portion 550 may supply bias power of approximately 10 through 1,000 W. The frequency of the bias power may be in a range of approximately 2 through 13.56 MHz. The bias power supply portion 550 supplies the bias power to the substrate support chuck 520, so that the bias power is provided to the substrate 10 on the substrate support chuck 520. The bias power can allow plasma to move to the substrate edge region exposed to the outsides of the substrate support chuck 520 and the mask part 300. [104] A lower electrode 510 may be provided to the end of the substrate support chuck 520 as illustrated. The lower electrode 510 is connected with a ground power source. The lower electrode 510 induces coupling of the bias power applied to the substrate support portion 500 and increases plasma density, so that an etching rate of the substrate edge region can be improved.

[105] Since the bias power is provided to the substrate support chuck 520, an insulating layer 511 is provided between the substrate support chuck 520 and the lower electrode

510. Referring to FIG. 1, the insulating layer 511 is provided along the periphery of the lateral side of the substrate support chuck 520. In this case, the size of the substrate support portion 500 includes the substrate support chuck 520 and the insulating layer

511. Therefore, the substrate 10 located on the substrate support portion 500 protrudes from the end of the insulating layer 511 by approximately 0.1 through 5 mm. Of course, in a case where the insulating layer 511 is located only in a region between the substrate support chuck 520 and the lower electrode 510, that is, in a case where the insulating layer 511 does not contact the substrate 10, the substrate may protrude from the end of the substrate support chuck 520 by approximately 0.1 through 5 mm .

[106] The driver 540 includes: a driving shaft portion 541 extending to the inside of the chamber 100 and moving the substrate support chuck 520 up and down; and a driving member 542 configured to move the driving shaft portion 541.

[107] In the above exemplary embodiment, description has been made mainly for the apparatus for etching the substrate edge region. However, the gas supply portions in accordance with the above-described exemplary embodiment are not limited to the apparatus but can be applied to various semiconductor manufacturing apparatuses. Also, although the process gas and the inert gas are provided through the mask part blocking the central region of the substrate in the above description, they are not limited thereto but may be injected through a separate gas spraying unit (for example, a shower head). Further, although the passage through which the gas moves is located inside the inner lateral wall of the chamber in the above description, the passage is not limited thereto but can be tightly disposed on the inner surface of the chamber.

[108] An etching method of the plasma etching apparatus having the above-described structure will be briefly described below.

[109] The gate valve (not shown) provided to the lateral side of the chamber 100 is opened, and the substrate 10 is loaded into the inside of the chamber 100, that is, the reaction compartment A through the gate valve. The loaded substrate 10 is located on the substrate support portion 500. The inside of the chamber 100 may be heated to a predetermined temperature by the heating units 112, 122, and 531 provided inside the substrate support portion and the chamber 100, or may be heated simultaneously with loading of the substrate 10. Particularly, the etching reactivity of the substrate edge region is improved by heating the substrate edge region.

[110] After the substrate 10 is located on the substrate support portion 500, the gate valve (not shown) is closed and the pressure of the reaction compartment A inside the chamber 100 is controlled to a targeted pressure.

[I l l] Also, the substrate support portion 500 is elevated and moved to the inside of the concave groove portion 123 of the upper chamber portion 120. The substrate support portion 500 is positioned to be adjacent to the mask part 300 provided inside the concave groove portion 123. That is, the distance between the substrate support portion 500 and the mask part 300 is maintained to be approximately 0.1 through 10 mm. By maintaing the above range, plasma generation in a region between the substrate support portion 500 and the mask part 300 can be prevented. Also, the substrate 10, the substrate support portion 500, and the mask part 300 are manufactured in a circular shape, and concentrically aligned. With this structure, the edge region of the substrate 10 is exposed to the outside by the substrate support portion 500 and the mask part 300 that are disposed to be adjacent to each other. When the distance between the mask part 300 and the substrate 10 is small, plasma is not generated on a region of the substrate under the mask part 300.

[112] Subsequently, a process gas is supplied to the reaction compartment A through the process gas supply unit 700, and an inert gas is supplied to a region between the substrate 10 and the mask part 300 (that is, the non-etching region) through the inert gas supply unit 800. Subsequently, plasma is generated on a plasma generation region (that is, substrate edge region) through the plasma generator 400.

[113] At this point, the process gas is uniformly sprayed along the periphery of the lateral wall of the mask part 300, and the process gas is activated by the plasma generated on the periphery of the lateral wall of the mask part 300. At this point, bias power is applied to the upper electrode 310 provided to the periphery of the mask part 300 and the lower electrode 510 provided to the periphery of the substrate support portion 500 to remove a layer and particles on the substrate edge region. For example, when bias power having a frequency of 13.56 MHz and power of 500 W is provided to the substrate support portion 500, the substrate edge region exposed to the plasma is etched by the bias power. Meanwhile, the inert gas is provided to the central region of the mask part 300 through the inert gas supply unit 800 to prevent the process gas in the plasma state from penetrating into the central region of the substrate.

[114] After the etching of the substrate edge region is completed, the plasma generation and the process gas injection are stopped, and a residual gas inside the chamber 100 is exhausted. The inert gas may be continuously injected during the exhaust process to completely exhaust the process gases inside the chamber 100 to the outside. Also, the substrate support portion 500 is lowered to the lower wall region of the lower chamber portion 110. At this point, a necessary gas is injected depending on needs, and the high frequency bias power applied to the antenna portion is gradually reduced, so that the process plasma is maintained and gradually disappears until the residual gas is exhausted or the substrate support portion 500 is lowered. By doing so, particle accumulation and defect may be reduced. Thereafter, the gate valve 130 is opened and the substrate 10 of which process is completed is unloaded to the outside of the chamber 100.

[115] Of course, in a plasma etching equipment in accordance with the exemplary embodiment, the leakage preventing unit of the process gas supply unit can be integrally manufactured with the chamber, and a baffle is provided inside the mask part integrally formed with the gas spray unit to uniformly provide an inert gas. A plasma etching equipment will be described hereafter in accordance with a second exemplary embodiment. In the description below an overlapping description with the first exemplary embodiment will be omitted. Also, some of the technologies described below can be applied to the first exemplary embodiment.

[116] FIG. 8 is a schematic cross-sectional view of a plasma etching equipment in accordance with a second exemplary embodiment, FIG. 9 is a perspective view explaining a process gas supply unit of a plasma etching chamber in accordance with the second exemplary embodiment, and FIG. 10 is a cross-sectional view explaining a leakage exhaust unit in accordance with the second exemplary embodiment.

[117] Referring to FIGS. 8 through 10, the plasma etching equipment includes a chamber 100 including an upper chamber portion 120 and a lower chamber portion 110 coupled to each other, a substrate support portion 500 configured to support a non-etching region of a substrate 10, a mask part 300 provided in the upper chamber portion 120 to block the non-etching region of the substrate 10 and including a concave portion 320, a plasma generator 400 configured to generate plasma on an exposed substrate region, the process gas supply unit 700 extending to the inside of the upper chamber portion 120 and the lower chamber portion 110 to supply a process gas to a plasma generation region, a baffle 900 provided inside the concave portion 320, and an inert gas supply unit 800 extending to the inside of the upper chamber portion 120 and the lower chamber portion 110 to supply an inert gas to the baffle 900.

[118] The process gas supply unit 700 includes a lower extension passage 710 provided inside the wall surface of the lower chamber portion 110, an upper extension passage 720 configured to communicate with the lower extension passage 710 and provided inside the wall surface of the upper chamber portion 120, an injection passage 750 extending to a space between the upper chamber portion 120 and the mask part 300, and a leakage preventing unit 770 provided to a communicating region between the lower extension passage 710 and the upper extension passage 720. At this point, the process gas supply unit 700 further includes a gas storage unit 740 configured to supply a process gas to the lower extension passage 710.

[119] A portion of the lower extension passage 710 extends from the lower portion to the upper portion of the lower chamber portion 110 as illustrated in FIG. 8. That is, the end of the lower extension passage 710 is exposed to the upper surface of the lower chamber portion 110. A portion of the upper extension passage 720 extends from the lower portion to the upper portion of the upper chamber portion 120 as illustrated in FIG. 8. That is, the end of the upper extension passage 720 is exposed to the lower surface of the upper chamber portion 120. The lower chamber portion 110 and the upper chamber portion 120 are tightly attached to each other. At this point, the upper surface of the lower chamber portion 110 and the lower surface of the upper chamber portion 120 are tightly attached to each other, so that the lower extension passage 710 and the upper extension passage 720 communicate with each other.

[120] In the exemplary embodiment, the leakage preventing unit 770 is formed at a bonding region of the lower extension passage 710 and the upper extension passage 720 to prevent leakage between the lower extension passage 710 and the upper extension passage 720 communicating with each other.

[121] The leakage preventing unit 770 includes an exhaust gas unit including a process gas exhaust groove 771 which is provided in the outer side of the communicating region of the lower extension passage 710 and the upper extension passage 720; an exhaust passage 772 communicating with the exhaust groove 771; and an exhaust pump 773 connected to the exhaust passage 772. As illustrated in FIGS. 9 and 10, the process gas exhaust groove 771 includes a first exhaust groove 771a formed in the upper region of the lower chamber portion 110, and a second exhaust groove 771b formed in the lower region of the upper chamber portion 120. The first exhaust groove 771a is formed by removing a portion of the upper portion of the lower chamber portion 110. Also, the second exhaust groove 771b is formed by removing a portion of the lower portion of the upper chamber portion 120. The first and second exhaust grooves 771a and 771b are manufactured in a ring shape. The lower extension passage 710 and the upper extension passage 720 are located in the central region of the ring. Of course, the lower extension passage 710 and the upper extension passage 720 are not limited thereto but one of them can be omitted. Also, a plurality of exhaust grooves can be formed in the lower chamber portion 110 and the upper chamber portion 120.

[122] Referring to FIGS. 9 and 10, a first and a second O-ring portions 774 and 775 are provided to the inner and outer sides of the process gas exhaust groove 771.

[123] The above-described inert gas supply unit 800 includes an inert gas storage unit 840, a lower extension passage 810 provided inside the wall surface of the lower chamber portion 110, an upper extension passage 820 provided inside the wall surface of the upper chamber portion 120, and an injection passage 850 supplying an inert gas to the inside of the chamber 100.

[124] The concave portion 320 of the mask part 300 is manufactured in a inwardly recessed shape from the bottom of the mask part 300. The injection passage 850 supplying an inert gas is located in the upper surface of the concave portion 320.

[125] The baffle 900 is located below the injection passage 850, and let inert gas which is supplied through the injection passage 850 bump against the baffle 900 to be widely distributed, so that the inert gas is uniformly sprayed. For this purpose, the baffle 900 is located in the open region of the concave portion 320. In the exemplary embodiment, the inert gas is sprayed to the central portion of the substrate 10 (that is, the non-etching region) through the baffle 900 to prevent penetration of process gas of the edge region into the central region of the substrate.

[126] Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments, the invention is not limited thereto, but is defined by the appended claims. Therefore, it should be noted that various changes and modifications can be made by those skilled in the art without departing from the technical spirit of the appended claims.

Claims

[1] A gas supplying apparatus for supplying a gas to a chamber having a reaction compartment, the apparatus comprising: a gas spraying unit configured to spray a gas to the reaction compartment; a gas storage unit configured to store the gas; first and second extension passages between the gas spraying unit and the gas storage unit; and a leakage preventing unit provided to a connection region of the first and second extension passages to prevent leakage of the gas.

[2] The apparatus of claim 1, wherein the leakage preventing unit comprises: a first body including a first through hole connected to the first extension passage; a second body sealed to and coupled to the first body, the second body including a second through hole which is connected to the second extension passage and communicates with the first through hole; and a gas exhaust unit provided on outer peripheries of the first and second through holes.

[3] The apparatus of claim 2, wherein the gas exhaust unit comprises a gas exhaust groove formed in a ring shape to at least one of the first and second bodies.

[4] The apparatus of claim 1, wherein the chamber comprises an upper chamber portion and a lower chamber portion detachably coupled to each other, the first extension passage is provided inside a wall surface of the lower chamber portion, and the second extension passage is provided inside a wall surface of the upper chamber portion.

[5] The apparatus of claim 4, wherein the leakage preventing unit comprises a gas exhaust groove provided in a coupling surface region of at least one of the upper chamber portion and the lower chamber portion.

[6] The apparatus of claim 3 or 5, further comprising: an exhaust passage configured to communicate with the gas exhaust groove; and an exhaust pump connected to the exhaust passage.

[7] The apparatus of claim 3 or 5, wherein a pressure inside the gas exhaust groove is lower than pressures of the first and second extension passages.

[8] The apparatus of claim 3 or 5, further comprising at least one O-ring provided to at least one of an inside region and an outside region of the gas exhaust groove.

[9] An equipment for etching a substrate edge, the equipment comprising: a chamber comprising an upper chamber portion and a lower chamber portion detachably coupled to each other, and a reaction compartment; a mask part provided in the reaction compartment; a substrate support portion provided below the mask part; and a process gas supply unit which comprises first and second extension passages and a leakage preventing unit, and supplies a process gas into the reaction compartment, wherein at least a portion of the first and second extension passages is provided inside wall surfaces of the lower and upper chamber portions, wherein the first and second extension passages communicates with each other, and wherein the leakage preventing unit is provided in a communicating region of the first and second extension passages.

[10] The equipment of claim 9, wherein the leakage preventing unit comprises: a first body including a first through hole provided in a detachment surface of the lower chamber portion and connected to the first extension passage; a second body including a second through hole provided in a detachment surface of the upper chamber portion and connected to the second extension passage; and a gas exhaust unit provided on outer peripheries of the first and second through holes.

[11] The equipment of claim 10, wherein the gas exhaust unit comprises a gas exhaust groove formed in a ring shape to at least one of the first and second bodies.

[12] The equipment of claim 11, wherein the gas exhaust unit further comprises: an exhaust passage configured to communicate with the gas exhaust groove; and an exhaust pump connected to the exhaust passage.

[13] The equipment of claim 10, wherein each of the first and second bodies is manufactured in a plate shape, and concave grooves into which the first and the second bodies are inserted are formed in detachment surface regions of the upper chamber portion and the lower chamber portion.

[14] The equipment of claim 9, wherein the leakage preventing unit comprises a gas exhaust groove formed in a detachment surface region of at least one of the upper chamber portion and the lower chamber portion.

[15] The equipment of claim 14, wherein the leakage preventing unit further comprises: an exhaust passage configured to communicate with the gas exhaust groove; and an exhaust pump connected to the exhaust passage.

[16] The equipment of claim 11 or 14, wherein pressure inside the gas exhaust groove is lower than pressures of the first and second extension passages.

[17] The equipment of claim 11 or 14, further comprising at least one O-ring provided to at least one of an inside region and an outside region of the gas exhaust groove.

[18] The equipment of claim 9, wherein the process gas supply unit further comprises a process gas storage unit provided below the lower chamber portion to supply a process gas to the first extension passage. [19] The equipment of claim 9, wherein the process gas supply unit further comprises: an injection nozzle unit provided to a lateral sidewall region of the mask part; and an injection passage configured to connect the injection nozzle unit with the extension passage. [20] The equipment of claim 9, further comprising an inert gas supply unit comprising: a storage unit configured to store an inert gas; an extension passage extending to one of an inside region of a wall surface and an adjacent region of the wall surface of the chamber; an injection passage connected to the extension passage and extending to an inside region of the mask part; and a spray nozzle connected to the injection passage and provided on a lower surface of the mask part. [21] The equipment of claim 9, further comprising a plasma generator configured to generate plasma in a lateral region of the mask part and the substrate support portion. [22] The equipment of claim 9, further comprising a shield part forming a separation compartment in the chamber. [23] The equipment of claim 22, further comprising a Faraday shield provided on an outer periphery of the shield part. [24] The equipment of claim 9, further comprising an upper electrode provided to an edge region of the mask part.