WO2008136502A1 - Valve open/close operation check method, gas treatment device, and storage medium - Google Patents

Valve open/close operation check method, gas treatment device, and storage medium Download PDF

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Publication number
WO2008136502A1
WO2008136502A1 PCT/JP2008/058369 JP2008058369W WO2008136502A1 WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1 JP 2008058369 W JP2008058369 W JP 2008058369W WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
judged
storage medium
treatment device
gas treatment
Prior art date
Application number
PCT/JP2008/058369
Other languages
French (fr)
Japanese (ja)
Inventor
Tamaki Takeyama
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2008136502A1 publication Critical patent/WO2008136502A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A base pressure in a chamber is formed and valves are set to the state that a valve close instruction is given. A gas is fed to a plurality of gas lines at a line-fill mode and it is judged whether the pressure in the chamber exceeds a tolerance. If YES, it is judged that there exists a valve not closed and an alarm is generated. If NO, it is judged that a plurality of valves are set to the state that an open instruction is given and the gas is fed to the plurality of gas lines while controlling the flow rate. Check is made to determine whether the gas flow rate is below the tolerance. If YES, it is judged that the valve of the gas line is not actually opened and an alarm is generated. If NO, it is judged that no trouble is present.
PCT/JP2008/058369 2007-05-02 2008-05-01 Valve open/close operation check method, gas treatment device, and storage medium WO2008136502A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007121962A JP2008277666A (en) 2007-05-02 2007-05-02 Valve switching operation checking method, gas processing apparatus, and storage medium
JP2007-121962 2007-05-02

Publications (1)

Publication Number Publication Date
WO2008136502A1 true WO2008136502A1 (en) 2008-11-13

Family

ID=39943607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058369 WO2008136502A1 (en) 2007-05-02 2008-05-01 Valve open/close operation check method, gas treatment device, and storage medium

Country Status (3)

Country Link
JP (1) JP2008277666A (en)
TW (1) TW200909607A (en)
WO (1) WO2008136502A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010126797A (en) * 2008-11-28 2010-06-10 Tokyo Electron Ltd Film deposition system, semiconductor fabrication apparatus, susceptor for use in the same, program and computer readable storage medium
WO2012166748A1 (en) 2011-05-27 2012-12-06 Crystal Solar, Inc. Silicon wafers by epitaxial deposition
JP6107327B2 (en) 2013-03-29 2017-04-05 東京エレクトロン株式会社 Film forming apparatus, gas supply apparatus, and film forming method
JP6441050B2 (en) * 2014-12-01 2018-12-19 東京エレクトロン株式会社 Deposition method
JP6869765B2 (en) * 2017-03-23 2021-05-12 株式会社日立ハイテク Plasma processing equipment and plasma processing method
JP6971805B2 (en) * 2017-11-28 2021-11-24 株式会社日立ハイテク Plasma processing equipment and plasma processing method
CN113948358B (en) * 2020-07-17 2024-03-12 中微半导体设备(上海)股份有限公司 Plasma processing device and method for forming semiconductor structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (en) * 1979-09-03 1981-04-11
JPH06281052A (en) * 1993-03-22 1994-10-07 Nippon Steel Corp Valve opening/closing checking method for high purity gas piping system
JPH0977593A (en) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd Chemical vapor phase growing method and chemical vapor phase growing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (en) * 1979-09-03 1981-04-11
JPH06281052A (en) * 1993-03-22 1994-10-07 Nippon Steel Corp Valve opening/closing checking method for high purity gas piping system
JPH0977593A (en) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd Chemical vapor phase growing method and chemical vapor phase growing device

Also Published As

Publication number Publication date
TW200909607A (en) 2009-03-01
JP2008277666A (en) 2008-11-13

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