WO2008130458A3 - Ordered oxynitride perovskites - Google Patents

Ordered oxynitride perovskites Download PDF

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Publication number
WO2008130458A3
WO2008130458A3 PCT/US2008/000164 US2008000164W WO2008130458A3 WO 2008130458 A3 WO2008130458 A3 WO 2008130458A3 US 2008000164 W US2008000164 W US 2008000164W WO 2008130458 A3 WO2008130458 A3 WO 2008130458A3
Authority
WO
WIPO (PCT)
Prior art keywords
cations
oxynitride perovskites
ordered
perovskites
sit
Prior art date
Application number
PCT/US2008/000164
Other languages
French (fr)
Other versions
WO2008130458A2 (en
Inventor
Ronald Cohen
Razvan Caracas
Original Assignee
Carnegie Inst Of Washington
Ronald Cohen
Razvan Caracas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carnegie Inst Of Washington, Ronald Cohen, Razvan Caracas filed Critical Carnegie Inst Of Washington
Priority to CA002674035A priority Critical patent/CA2674035A1/en
Priority to JP2009544941A priority patent/JP2010515643A/en
Priority to KR20097016348A priority patent/KR101489849B1/en
Publication of WO2008130458A2 publication Critical patent/WO2008130458A2/en
Publication of WO2008130458A3 publication Critical patent/WO2008130458A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C01B21/0823—Silicon oxynitrides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8561—Bismuth-based oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Silicon Compounds (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

This invention relates to partially ordered and ordered oxynitride perovskites of the general formula ABO2N that are polar insulators. A comprises one or more cations or set of cations that sit in sites derived from the A-site in the perovskite structure. B comprises one ore more cations or set of cations that sit in sites derived from the B-site in the perovskite structure. C comprises oxygen, O, with optionally some nitrogen, N, and D comprises N, with optionally some O. The total valence of the cations A + B is equal to the total valence of the anions 2 C + D. Also disclosed are methods of producing such oxynitride perovskites and uses of such oxynitride perovskites.
PCT/US2008/000164 2007-01-04 2008-01-04 Ordered oxynitride perovskites WO2008130458A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CA002674035A CA2674035A1 (en) 2007-01-04 2008-01-04 Ordered oxynitride perovskites
JP2009544941A JP2010515643A (en) 2007-01-04 2008-01-04 Regular oxynitrite
KR20097016348A KR101489849B1 (en) 2007-01-04 2008-01-04 Ordered oxynitride perovskites

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87839207P 2007-01-04 2007-01-04
US60/878,392 2007-01-04
US87901107P 2007-01-08 2007-01-08
US60/879,011 2007-01-08

Publications (2)

Publication Number Publication Date
WO2008130458A2 WO2008130458A2 (en) 2008-10-30
WO2008130458A3 true WO2008130458A3 (en) 2008-12-31

Family

ID=39876115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/000164 WO2008130458A2 (en) 2007-01-04 2008-01-04 Ordered oxynitride perovskites

Country Status (5)

Country Link
US (2) US8287831B2 (en)
JP (1) JP2010515643A (en)
KR (1) KR101489849B1 (en)
CA (1) CA2674035A1 (en)
WO (1) WO2008130458A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008130458A2 (en) * 2007-01-04 2008-10-30 Carnegie Institution Of Washington Ordered oxynitride perovskites
CN102077376B (en) 2008-06-27 2015-04-22 松下电器产业株式会社 Piezoelectric element and method for manufacturing the same
US9035253B2 (en) * 2008-06-27 2015-05-19 Panasonic Intellectual Property Managment Co., Ltd. Infrared sensor element
JP2010143788A (en) * 2008-12-18 2010-07-01 Canon Inc Oxynitride piezoelectric material and method for producing the same
JP2010143789A (en) * 2008-12-18 2010-07-01 Canon Inc Piezoelectric material
EP2563720A1 (en) 2010-04-28 2013-03-06 Murata Manufacturing Co., Ltd. Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same
US9099384B2 (en) 2012-02-15 2015-08-04 Drexel University Charge ordered vertical transistors
WO2015136953A1 (en) * 2014-03-13 2015-09-17 国立研究開発法人科学技術振興機構 Method for producing perovskite type metal oxynitride
CN117935946B (en) * 2024-03-21 2024-06-07 山东农业大学 Calculation method for predicting small tau perovskite ground state structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040135495A1 (en) * 2002-10-18 2004-07-15 Xingwei Wu Color electroluminescent displays
US6979623B2 (en) * 2003-12-17 2005-12-27 Texas Instruments Incorporated Method for fabricating split gate transistor device having high-k dielectrics

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573060B1 (en) * 1984-11-13 1987-02-20 Centre Nat Rech Scient NITROGEN OR OXYAZOTE COMPOUNDS WITH PEROVSKITE STRUCTURE, THEIR PREPARATION AND THEIR APPLICATION TO THE MANUFACTURE OF DIELECTRIC COMPONENTS
FR2613118B1 (en) * 1987-03-27 1989-07-21 Centre Nat Rech Scient CONDUCTIVE OXYAZOTE PEROVSKITES, THEIR PREPARATION AND THEIR USE IN PARTICULAR AS ELECTRODE MATERIAL
EP1037244A3 (en) * 1999-03-12 2003-01-08 TDK Corporation Electron-emitting material and preparing process
JP3137961B2 (en) * 1999-03-19 2001-02-26 ティーディーケイ株式会社 Electron emission electrode
WO2008130458A2 (en) * 2007-01-04 2008-10-30 Carnegie Institution Of Washington Ordered oxynitride perovskites

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040135495A1 (en) * 2002-10-18 2004-07-15 Xingwei Wu Color electroluminescent displays
US6979623B2 (en) * 2003-12-17 2005-12-27 Texas Instruments Incorporated Method for fabricating split gate transistor device having high-k dielectrics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YOUNG-II THESIS K.: "SYNTHESES, CRYSTAL STRUCTURES, AND DIELECTRIC PROPERTY OF OCYNITRIDE PEROVSKITES", OHIO STATE UNIV. COLUMBUS, OH, USA, vol. 66, no. 6, 2005, pages 123 - 156 *

Also Published As

Publication number Publication date
KR20090104093A (en) 2009-10-05
WO2008130458A2 (en) 2008-10-30
CA2674035A1 (en) 2008-10-30
US8287831B2 (en) 2012-10-16
US8721915B2 (en) 2014-05-13
US20130071312A1 (en) 2013-03-21
JP2010515643A (en) 2010-05-13
US20100284883A1 (en) 2010-11-11
KR101489849B1 (en) 2015-02-04

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