WO2008117435A1 - Magnetic head, method for manufacturing the same, and information access unit - Google Patents

Magnetic head, method for manufacturing the same, and information access unit Download PDF

Info

Publication number
WO2008117435A1
WO2008117435A1 PCT/JP2007/056390 JP2007056390W WO2008117435A1 WO 2008117435 A1 WO2008117435 A1 WO 2008117435A1 JP 2007056390 W JP2007056390 W JP 2007056390W WO 2008117435 A1 WO2008117435 A1 WO 2008117435A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
reluctance element
reluctance
field application
magnetic head
Prior art date
Application number
PCT/JP2007/056390
Other languages
French (fr)
Japanese (ja)
Inventor
Masanori Akie
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/056390 priority Critical patent/WO2008117435A1/en
Publication of WO2008117435A1 publication Critical patent/WO2008117435A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)

Abstract

A magnetic head comprising a reluctance element exhibiting reluctance dependent on the magnetic field; two magnetic field application bodies sandwiching the reluctance element and applying a predetermined magnetic field to the reluctance element; two shield bodies for shielding the magnetic field while sandwiching the reluctance element and two magnetic field application bodies from the direction touching the reluctance element and connected electrically with the reluctance element; a first insulating film located between the reluctance element and the two magnetic field application bodies, respectively, in order to insulate the reluctance element and the magnetic field application body one from the other; and a second insulating film, which is thicker than the first insulating film, and is located between the reluctance element and one or both of the two magnetic field application bodies in order to insulate the shield body and the magnetic field application body one from the other.
PCT/JP2007/056390 2007-03-27 2007-03-27 Magnetic head, method for manufacturing the same, and information access unit WO2008117435A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056390 WO2008117435A1 (en) 2007-03-27 2007-03-27 Magnetic head, method for manufacturing the same, and information access unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056390 WO2008117435A1 (en) 2007-03-27 2007-03-27 Magnetic head, method for manufacturing the same, and information access unit

Publications (1)

Publication Number Publication Date
WO2008117435A1 true WO2008117435A1 (en) 2008-10-02

Family

ID=39788178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056390 WO2008117435A1 (en) 2007-03-27 2007-03-27 Magnetic head, method for manufacturing the same, and information access unit

Country Status (1)

Country Link
WO (1) WO2008117435A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530988B2 (en) 2010-12-22 2013-09-10 HGST Netherlands B.V. Junction isolation for magnetic read sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210794A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Magnetoresistance effect element, manufacturing method thereof, and magnetic recording apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210794A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Magnetoresistance effect element, manufacturing method thereof, and magnetic recording apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530988B2 (en) 2010-12-22 2013-09-10 HGST Netherlands B.V. Junction isolation for magnetic read sensor

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