WO2008114799A1 - Plasma treating apparatus, and plasma treating method - Google Patents

Plasma treating apparatus, and plasma treating method Download PDF

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Publication number
WO2008114799A1
WO2008114799A1 PCT/JP2008/055014 JP2008055014W WO2008114799A1 WO 2008114799 A1 WO2008114799 A1 WO 2008114799A1 JP 2008055014 W JP2008055014 W JP 2008055014W WO 2008114799 A1 WO2008114799 A1 WO 2008114799A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
plasma
plasma treating
shower head
treating
Prior art date
Application number
PCT/JP2008/055014
Other languages
French (fr)
Japanese (ja)
Inventor
Tadahiro Ohmi
Tetsuya Goto
Atsutoshi Inokuchi
Kiyotaka Ishibashi
Cai Zhong Tian
Toshihisa Nozawa
Original Assignee
Tokyo Electron Limited
National University Corporation Tohoku University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, National University Corporation Tohoku University filed Critical Tokyo Electron Limited
Publication of WO2008114799A1 publication Critical patent/WO2008114799A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Abstract

Disclosed is a plasma treating method capable of preventing an abnormal discharge from occurring in a gas inlet passage formed in a shower head having the function of a roof. This plasma treating method is undergone in a plasma treating apparatus comprising a gas introduction passage for introducing a gas containing at least a plasma exciting gas into a treating chamber made evacuative, and a shower head having a plurality of gas discharge ports communicating with the gas introduction passage thereby to discharge the gas into the treating chamber. In the plasma treating method, an electromagnetic wave is introduced via the shower head intothe treating chamber, thereby to subject a work (W) to the plasma treatment. The gas in a gas introducing passage (84) is set at a pressure of 4,000 Pa (30 Torrs) or higher.
PCT/JP2008/055014 2007-03-21 2008-03-18 Plasma treating apparatus, and plasma treating method WO2008114799A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007073770A JP2008235611A (en) 2007-03-21 2007-03-21 Plasma processing equipment and method for processing plasma
JP2007-073770 2007-03-21

Publications (1)

Publication Number Publication Date
WO2008114799A1 true WO2008114799A1 (en) 2008-09-25

Family

ID=39765906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055014 WO2008114799A1 (en) 2007-03-21 2008-03-18 Plasma treating apparatus, and plasma treating method

Country Status (3)

Country Link
JP (1) JP2008235611A (en)
TW (1) TW200903636A (en)
WO (1) WO2008114799A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153680A (en) * 2008-12-26 2010-07-08 Hitachi High-Technologies Corp Plasma treatment device
WO2018047440A1 (en) * 2016-09-12 2018-03-15 株式会社東芝 Flow channel structure and processing apparatus
CN108103480A (en) * 2018-01-11 2018-06-01 宁波晶钻工业科技有限公司 A kind of chemical vapor deposition stove
CN114420526A (en) * 2022-01-18 2022-04-29 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058560A1 (en) * 2008-11-20 2010-05-27 株式会社エバテック Plasma processing apparatus
JP6061545B2 (en) * 2012-08-10 2017-01-18 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
TWI826925B (en) * 2018-03-01 2023-12-21 美商應用材料股份有限公司 Plasma source assemblies and gas distribution assemblies
DE112018007946T5 (en) * 2018-08-28 2021-06-02 Fuji Corporation Gas supply determination method and plasma generator device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299314A (en) * 2001-03-28 2002-10-11 Tadahiro Omi Plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299314A (en) * 2001-03-28 2002-10-11 Tadahiro Omi Plasma processing apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153680A (en) * 2008-12-26 2010-07-08 Hitachi High-Technologies Corp Plasma treatment device
WO2018047440A1 (en) * 2016-09-12 2018-03-15 株式会社東芝 Flow channel structure and processing apparatus
JP2018044191A (en) * 2016-09-12 2018-03-22 株式会社東芝 Flow passage structure, and processing equipment
US10774420B2 (en) 2016-09-12 2020-09-15 Kabushiki Kaisha Toshiba Flow passage structure and processing apparatus
CN108103480A (en) * 2018-01-11 2018-06-01 宁波晶钻工业科技有限公司 A kind of chemical vapor deposition stove
CN114420526A (en) * 2022-01-18 2022-04-29 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device
CN114420526B (en) * 2022-01-18 2023-09-12 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device

Also Published As

Publication number Publication date
JP2008235611A (en) 2008-10-02
TW200903636A (en) 2009-01-16

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