WO2008102787A1 - ＧａＮ系ＬＥＤ素子および発光装置 - Google Patents

ＧａＮ系ＬＥＤ素子および発光装置 Download PDF

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Publication number
WO2008102787A1
WO2008102787A1 PCT/JP2008/052806 JP2008052806W WO2008102787A1 WO 2008102787 A1 WO2008102787 A1 WO 2008102787A1 JP 2008052806 W JP2008052806 W JP 2008052806W WO 2008102787 A1 WO2008102787 A1 WO 2008102787A1
Authority
WO
WIPO (PCT)
Prior art keywords
led element
light emitting
gan led
emitting device
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052806
Other languages
English (en)
French (fr)
Inventor
Shin Hiraoka
Hiroaki Okagawa
Takahide Joichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007323248A external-priority patent/JP2008244425A/ja
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to US12/527,929 priority Critical patent/US8158994B2/en
Publication of WO2008102787A1 publication Critical patent/WO2008102787A1/ja
Anticipated expiration legal-status Critical
Priority to US13/418,416 priority patent/US20120171796A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)

Abstract

　ＧａＮ系ＬＥＤ素子１００において、第１導電膜１０４－１と正パッド電極１０５とが、第２導電膜１０４－２を介して、電気的に接続されている。導電性酸化物膜１０４のｐ型層１０２－３との接触抵抗は、第１コンタクト部１０４Ａにおいて第２コンタクト部１０４Ｂよりも低くされており、そのために、正パッド電極１０５から導電性酸化物膜１０４を介してｐ型層１０２－３に供給される電流は、主として第１コンタクト部１０４Ａを通してｐ型層１０２－３に流れる。
PCT/JP2008/052806 2007-02-21 2008-02-20 ＧａＮ系ＬＥＤ素子および発光装置 Ceased WO2008102787A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/527,929 US8158994B2 (en) 2007-02-21 2008-02-20 GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein
US13/418,416 US20120171796A1 (en) 2007-02-21 2012-03-13 Gan led element and light emitting device having a structure to reduce light absorption by a pad electrode included therein

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-041528 2007-02-21
JP2007041528 2007-02-21
JP2007-050783 2007-02-28
JP2007050783 2007-02-28
JP2007323248A JP2008244425A (ja) 2007-02-21 2007-12-14 ＧａＮ系ＬＥＤ素子および発光装置
JP2007-323248 2007-12-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/418,416 Continuation US20120171796A1 (en) 2007-02-21 2012-03-13 Gan led element and light emitting device having a structure to reduce light absorption by a pad electrode included therein

Publications (1)

Publication Number Publication Date
WO2008102787A1 true WO2008102787A1 (ja) 2008-08-28

Family

ID=39710062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052806 Ceased WO2008102787A1 (ja) 2007-02-21 2008-02-20 ＧａＮ系ＬＥＤ素子および発光装置

Country Status (1)

Country Link
WO (1) WO2008102787A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353506A (ja) * 2001-05-23 2002-12-06 Sharp Corp 半導体発光素子およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353506A (ja) * 2001-05-23 2002-12-06 Sharp Corp 半導体発光素子およびその製造方法

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