WO2008096211A3 - Mesure de dimensions critiques de plaquettes de silicium semi-conductrices - Google Patents

Mesure de dimensions critiques de plaquettes de silicium semi-conductrices Download PDF

Info

Publication number
WO2008096211A3
WO2008096211A3 PCT/IB2007/051451 IB2007051451W WO2008096211A3 WO 2008096211 A3 WO2008096211 A3 WO 2008096211A3 IB 2007051451 W IB2007051451 W IB 2007051451W WO 2008096211 A3 WO2008096211 A3 WO 2008096211A3
Authority
WO
WIPO (PCT)
Prior art keywords
measurement
critical dimension
semiconductor wafers
critical dimensions
features
Prior art date
Application number
PCT/IB2007/051451
Other languages
English (en)
Other versions
WO2008096211A4 (fr
WO2008096211A2 (fr
Inventor
Onder Anilturk
Original Assignee
Freescale Semiconductor Inc
Onder Anilturk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Onder Anilturk filed Critical Freescale Semiconductor Inc
Priority to PCT/IB2007/051451 priority Critical patent/WO2008096211A2/fr
Priority to US12/526,445 priority patent/US8526708B2/en
Publication of WO2008096211A2 publication Critical patent/WO2008096211A2/fr
Publication of WO2008096211A3 publication Critical patent/WO2008096211A3/fr
Publication of WO2008096211A4 publication Critical patent/WO2008096211A4/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

Procédé de mesure de dimensions critiques d'une plaquette de silicium semi-conductrice comprenant la réception d'une image d'un site de la plaquette de silicium semi-conductrice comprenant une pluralité de motifs, le traitement de l'image de façon à mesurer au moins une dimension critique d'au moins certains des motifs, l'analyse de la dimension critique de chaque motif et la détermination, pour chaque motif, de sa défectuosité ou de sa non-défectuosité, ainsi que l'utilisation de la dimension critique d'au moins certains des motifs non défectueux en tant que mesure de la dimension critique des motifs de la plaquette de silicium semi-conductrice.
PCT/IB2007/051451 2007-02-08 2007-02-08 Mesure de dimensions critiques de plaquettes de silicium semi-conductrices WO2008096211A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/IB2007/051451 WO2008096211A2 (fr) 2007-02-08 2007-02-08 Mesure de dimensions critiques de plaquettes de silicium semi-conductrices
US12/526,445 US8526708B2 (en) 2007-02-08 2007-08-02 Measurement of critical dimensions of semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2007/051451 WO2008096211A2 (fr) 2007-02-08 2007-02-08 Mesure de dimensions critiques de plaquettes de silicium semi-conductrices

Publications (3)

Publication Number Publication Date
WO2008096211A2 WO2008096211A2 (fr) 2008-08-14
WO2008096211A3 true WO2008096211A3 (fr) 2009-02-19
WO2008096211A4 WO2008096211A4 (fr) 2009-04-23

Family

ID=39682161

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/051451 WO2008096211A2 (fr) 2007-02-08 2007-02-08 Mesure de dimensions critiques de plaquettes de silicium semi-conductrices

Country Status (2)

Country Link
US (1) US8526708B2 (fr)
WO (1) WO2008096211A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI364061B (en) * 2008-08-20 2012-05-11 Inotera Memories Inc The method for forecasting wafer overlay error and critical dimension
US9558565B2 (en) * 2014-02-07 2017-01-31 Materials Analysis Technology Inc. Dimension calculation method for a semiconductor device
US11035666B2 (en) 2017-08-07 2021-06-15 Kla-Tencor Corporation Inspection-guided critical site selection for critical dimension measurement
TWI768092B (zh) * 2017-08-07 2022-06-21 美商克萊譚克公司 用於臨界尺寸量測之檢測導引臨界位點選擇

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6754593B1 (en) * 2002-06-06 2004-06-22 Advanced Micro Devices, Inc. Method and apparatus for measuring defects
US6808946B1 (en) * 2002-07-16 2004-10-26 Advanced Micro Devices, Inc. Method of using critical dimension measurements to control stepper process parameters
US20050127292A1 (en) * 2003-12-11 2005-06-16 Kang Min-Sub Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles
US20050211897A1 (en) * 2004-03-26 2005-09-29 Hitachi High-Technologies Corporation Pattern measuring method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452677B1 (en) 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
US6539106B1 (en) 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
US6456736B1 (en) 1999-02-16 2002-09-24 Applied Materials, Inc. Automatic field sampling for CD measurement
US6526164B1 (en) 1999-05-27 2003-02-25 International Business Machines Corporation Intelligent photomask disposition
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6919957B2 (en) * 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
TW200538703A (en) 2004-05-06 2005-12-01 Zetetic Inst Apparatus and methods for measurement of critical dimensions of features and detection of defects in UV, VUV, and EUV lithography masks
KR101195226B1 (ko) * 2005-12-29 2012-10-29 삼성전자주식회사 반도체 웨이퍼 분석 시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6754593B1 (en) * 2002-06-06 2004-06-22 Advanced Micro Devices, Inc. Method and apparatus for measuring defects
US6808946B1 (en) * 2002-07-16 2004-10-26 Advanced Micro Devices, Inc. Method of using critical dimension measurements to control stepper process parameters
US20050127292A1 (en) * 2003-12-11 2005-06-16 Kang Min-Sub Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles
US20050211897A1 (en) * 2004-03-26 2005-09-29 Hitachi High-Technologies Corporation Pattern measuring method

Also Published As

Publication number Publication date
WO2008096211A4 (fr) 2009-04-23
US8526708B2 (en) 2013-09-03
WO2008096211A2 (fr) 2008-08-14
US20100046828A1 (en) 2010-02-25

Similar Documents

Publication Publication Date Title
TW200718957A (en) Improved calibration technique for measuring gate resistance of power MOS gate device at wafer level
TW200729390A (en) Method for making semiconductor wafer
AU2003237195A8 (en) High performance probe system for testing semiconductor wafers
EP1901356A4 (fr) Circuit de test, galette, appareil de mesure, procede de fabrication du dispositif et dispositif d' affichage
WO2006093722A3 (fr) Procedes et systemes destines a determiner l'erreur de superposition basee sur la symetrie d'images cibles
WO2007123762A3 (fr) Évaluation des dommages d'une plaquette par métrologie optique
WO2011085255A3 (fr) Métrologie de superposition guidée par une inspection
IL225971B (en) Metrological method and system and method for producing a standard
WO2008103700A3 (fr) Dispositif de mesure d'état de processus
WO2008077100A3 (fr) Systèmes et procédés de création de procédures de contrôle
WO2007117434A3 (fr) Mesure par métrologie optique d'une structure endommagée formée sur une plaquette
SG150475A1 (en) An e-beam inspection structure for leakage analysis
TW200515357A (en) Inspection method and inspection device for display device and active matrix substrate used for display device
FR2942533B1 (fr) Dispositif et procede d'inspection de plaquettes semi-conductrices
TW200700740A (en) Method for using internal semiconductor junctions to aid in non-contact testing
WO2007145953A3 (fr) dispositif de surveillance de la constance du courant d'un faisceau ionique, implanteur ionique et méthode connexe
WO2009044303A3 (fr) Substrat et procédé de calibration
WO2008123459A1 (fr) Appareil et procédé pour inspecter la bordure d'une tranche semi-conductrice
WO2007117436A3 (fr) Mesure par métrologie optique d'une structure endommagée formée sur une plaquette
WO2013040285A3 (fr) Mesure de fuite des trous d'interconnexion traversant le silicium
GB2446629A (en) Technique for evaluating local electrical characteristics in semiconductor devices
EP3970184A4 (fr) Procédé de mesure de défaut d'alignement dans la fabrication de tranches de dispositif à semi-conducteur topographique
WO2008096211A3 (fr) Mesure de dimensions critiques de plaquettes de silicium semi-conductrices
WO2009017465A3 (fr) Système et procédé d'inspection de défaut d'une tranche à motifs
WO2008066885A3 (fr) Procédé et système permettant de détecter l'existence d'une particule indésirable au cours de la fabrication d'un semi-conducteur

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 12526445

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07735584

Country of ref document: EP

Kind code of ref document: A2