WO2008091393A3 - Group iv nanoparticles and films thereof - Google Patents

Group iv nanoparticles and films thereof Download PDF

Info

Publication number
WO2008091393A3
WO2008091393A3 PCT/US2007/076549 US2007076549W WO2008091393A3 WO 2008091393 A3 WO2008091393 A3 WO 2008091393A3 US 2007076549 W US2007076549 W US 2007076549W WO 2008091393 A3 WO2008091393 A3 WO 2008091393A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanoparticles
group
films
atoms
manoparticle
Prior art date
Application number
PCT/US2007/076549
Other languages
French (fr)
Other versions
WO2008091393B1 (en
WO2008091393A2 (en
Inventor
Maxim Kelman
Xuegeng Li
Pingrong Yu
Karel Vanheusden
David Jurbergs
Original Assignee
Innovalight Inc
Maxim Kelman
Xuegeng Li
Pingrong Yu
Karel Vanheusden
David Jurbergs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/775,509 external-priority patent/US20090014423A1/en
Priority claimed from US11/842,466 external-priority patent/US7718707B2/en
Application filed by Innovalight Inc, Maxim Kelman, Xuegeng Li, Pingrong Yu, Karel Vanheusden, David Jurbergs filed Critical Innovalight Inc
Priority to EP07872740A priority Critical patent/EP2097195A2/en
Priority to CN2007800514770A priority patent/CN101657283B/en
Publication of WO2008091393A2 publication Critical patent/WO2008091393A2/en
Publication of WO2008091393A3 publication Critical patent/WO2008091393A3/en
Publication of WO2008091393B1 publication Critical patent/WO2008091393B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0545—Dispersions or suspensions of nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/12—Making metallic powder or suspensions thereof using physical processes starting from gaseous material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/068—Nanowires or nanotubes comprising a junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Abstract

A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each manoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.
PCT/US2007/076549 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof WO2008091393A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07872740A EP2097195A2 (en) 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof
CN2007800514770A CN101657283B (en) 2006-12-21 2007-08-22 Group IV nanoparticles and films thereof

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US87632806P 2006-12-21 2006-12-21
US60/876,328 2006-12-21
US90176807P 2007-02-16 2007-02-16
US60/901,768 2007-02-16
US11/775,509 US20090014423A1 (en) 2007-07-10 2007-07-10 Concentric flow-through plasma reactor and methods therefor
US11/775,509 2007-07-10
US11/842,466 2007-08-21
US11/842,466 US7718707B2 (en) 2006-12-21 2007-08-21 Method for preparing nanoparticle thin films

Publications (3)

Publication Number Publication Date
WO2008091393A2 WO2008091393A2 (en) 2008-07-31
WO2008091393A3 true WO2008091393A3 (en) 2008-10-02
WO2008091393B1 WO2008091393B1 (en) 2008-12-11

Family

ID=39577481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/076549 WO2008091393A2 (en) 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof

Country Status (3)

Country Link
EP (1) EP2097195A2 (en)
CN (1) CN101657283B (en)
WO (1) WO2008091393A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435477B2 (en) 1997-07-21 2013-05-07 Nanogram Corporation Dispersions of submicron doped silicon particles
US8623951B2 (en) 2001-08-03 2014-01-07 Nanogram Corporation Silicon nanoparticle dispersions
US9006720B2 (en) 2010-06-29 2015-04-14 Nanogram Corporation Silicon/germanium nanoparticles and inks having low metal contamination
US9175174B2 (en) 2000-10-17 2015-11-03 Nanogram Corporation Dispersions of submicron doped silicon particles
US9199435B2 (en) 2001-01-26 2015-12-01 Nanogram Corporation Dispersions of silicon nanoparticles
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8632702B2 (en) 2007-01-03 2014-01-21 Nanogram Corporation Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications
US8163587B2 (en) * 2009-07-02 2012-04-24 Innovalight, Inc. Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
GB201109319D0 (en) * 2011-06-03 2011-07-20 Intrinsiq Materials Ltd Uk Fine particles
US10225919B2 (en) 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
RU2016135213A (en) 2014-01-31 2018-03-05 Монолит Матириалз, Инк. PLASMA BURNER DESIGN
CA3032246C (en) 2015-07-29 2023-12-12 Monolith Materials, Inc. Dc plasma torch electrical power design method and apparatus
MX2018013161A (en) 2016-04-29 2019-06-24 Monolith Mat Inc Torch stinger method and apparatus.
EP3592810A4 (en) 2017-03-08 2021-01-27 Monolith Materials, Inc. Systems and methods of making carbon particles with thermal transfer gas
CA3060576A1 (en) 2017-04-20 2018-10-25 Monolith Materials, Inc. Carbon particles with low sulfur, ash and grit impurities

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US20060051505A1 (en) * 2004-06-18 2006-03-09 Uwe Kortshagen Process and apparatus for forming nanoparticles using radiofrequency plasmas
WO2006096201A2 (en) * 2004-07-28 2006-09-14 Evergreen Solar, Inc. Method for preparing group iv nanocrystals with chemically accessible surfaces
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465461A (en) * 2002-06-21 2004-01-07 江苏华强纳米科技有限公司 Method for preparing finely surface protected nano metal powder

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US20060051505A1 (en) * 2004-06-18 2006-03-09 Uwe Kortshagen Process and apparatus for forming nanoparticles using radiofrequency plasmas
WO2006096201A2 (en) * 2004-07-28 2006-09-14 Evergreen Solar, Inc. Method for preparing group iv nanocrystals with chemically accessible surfaces
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A. N. GOLDSTEIN: "The melting of silicon nanocrystals: Submicron thin-film structures derived from nanocrystal precursors", APPLIED PHYSICS A, vol. 62, 1996, Springer, pages 33 - 37, XP002488050 *
D. V. MELNIKOV ET. AL.: "Quantum Confinement in Phosphorus-Doped Silicon Nanocrystals", PHYSICAL REVIEW LETTERA, vol. 92, 2004, APS, pages 046802-1 - 046802-4, XP002488048 *
T. IFUKU ET. AL.: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 36, 1997, pages 4031 - 4034, XP002488047 *
Y. H. TANG ET. AL.: "Microstructure and field-emission characteristics of boron-doped Si nanoparticle chains.", APPLIED PHYSICS LETTERS, vol. 79, 2001, AIP, pages 1673 - 1675, XP002488049 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435477B2 (en) 1997-07-21 2013-05-07 Nanogram Corporation Dispersions of submicron doped silicon particles
US9175174B2 (en) 2000-10-17 2015-11-03 Nanogram Corporation Dispersions of submicron doped silicon particles
US9199435B2 (en) 2001-01-26 2015-12-01 Nanogram Corporation Dispersions of silicon nanoparticles
US8623951B2 (en) 2001-08-03 2014-01-07 Nanogram Corporation Silicon nanoparticle dispersions
US9006720B2 (en) 2010-06-29 2015-04-14 Nanogram Corporation Silicon/germanium nanoparticles and inks having low metal contamination
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents

Also Published As

Publication number Publication date
CN101657283B (en) 2013-01-23
EP2097195A2 (en) 2009-09-09
WO2008091393B1 (en) 2008-12-11
CN101657283A (en) 2010-02-24
WO2008091393A2 (en) 2008-07-31

Similar Documents

Publication Publication Date Title
WO2008091393A3 (en) Group iv nanoparticles and films thereof
WO2007116954A3 (en) Inorganic nanoparticle comprising an active substance immobilized on the surface and a polymer
EP1579935A4 (en) Metal nanoparticle and process for producing the same
EP2341117A3 (en) Core shell nanoparticles
WO2008063204A3 (en) Taggants and methods and systems for fabricating
WO2006068653A3 (en) Nanoparticles with inorganic core and methods of using them
WO2009071332A3 (en) Nanoparticulate composition and method for the production thereof
WO2009008923A3 (en) Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
WO2007045452A3 (en) Color effect pigment with a layer made of discrete metal particles, method for the production thereof and its use
WO2002062881A8 (en) Foam including surface-modified nanoparticles
EP1844884A4 (en) Silver particle powder and process for producing the same
WO2010041146A3 (en) Nanocomposite thermoelectric conversion material, thermoelectric conversion element including the same, and method of producing nanocomposite thermoelectric conversion material
WO2008143650A3 (en) Methods and materials for fabricating laminate nanomolds and nanoparticles therefrom
WO2010069675A3 (en) Low- surface area fumed silicon dioxide powder
WO2008045101A3 (en) Ordered nanoenergetic composites and synthesis method
EP1767567A4 (en) Multilayer polyester film and method for producing same
WO2008008945A3 (en) Particles for use in electrophoretic displays
WO2010002725A3 (en) Fixed abrasive particles and articles made therefrom
WO2005118305A3 (en) Thermoplastic article with a printable matte surface
MX2007005911A (en) Core-shell particles.
WO2007106771A3 (en) Multifunctional polymer coated magnetic nanocomposite materials
TW200602365A (en) Hollow resin fine particles, organic/inorganic hybrid fine particles, and method for producing hollow resin fine articles
WO2008106503A8 (en) Discrete size and shape specific pharmaceutical organic nanoparticles
JP2011525207A5 (en)
WO2008074804A3 (en) Magnetic nanoparticles for the application in hyperthermia, preparation thereof and use in constructs having a pharmacological application

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780051477.0

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007872740

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07872740

Country of ref document: EP

Kind code of ref document: A2