WO2008086855A1 - Emitter-converter chip - Google Patents
Emitter-converter chip Download PDFInfo
- Publication number
- WO2008086855A1 WO2008086855A1 PCT/EP2007/010772 EP2007010772W WO2008086855A1 WO 2008086855 A1 WO2008086855 A1 WO 2008086855A1 EP 2007010772 W EP2007010772 W EP 2007010772W WO 2008086855 A1 WO2008086855 A1 WO 2008086855A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light
- semiconductor component
- semiconductor body
- emitting
- component according
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
Definitions
- the invention relates to a light-emitting semiconductor component with a semiconductor body whose surface is structured and has hollow cylinders with parallel longitudinal axis, wherein the surface is coated with one or more conversion phosphors, a method for producing the semiconductor device and the use of the light-emitting semiconductor device for converting the primary radiation of the semiconductor device in longer wavelength monochromatic or multichromatic radiation, preferably for converting the blue emission into visible white radiation.
- white light for u.a. General lighting, automobiles, signals, backlighting of LCD, etc. with the help of light emitting diodes to realize.
- white LEDs should replace filament lamps (incandescent bulb, halogen bulb) and Hg plasma fluorescent lamps, etc., to a large extent. It is estimated that white LEDs without control and integration into lighting housings (ie installation in headlamps, lamps, etc.) in 2020 will account for 50% of the total lighting market (in 2007, approximately € 27 billion worldwide); H. will be the dominant lighting device. For this, however, several conditions must be met in the near future:
- the phosphor (nowadays grains of doped YAG, TAG (terbium garnet) or doped silicates) is the main cause of low lumen efficiency and poor color rendering of white light: first, it does not have optimal fluorescence characteristics, and the required white light is lacking In addition, a much too low proportion of the electroluminescent light is absorbed by the phosphor and converted by it into light of longer wavelengths, because the optical coupling of the phosphor to the chip is insufficient When scattered back to the chip, it reabsorbs its formerly emitted blue light, since the Stokes shift (energy gap between absorption and emission) of semiconductors is extremely small, ie, shift ⁇ 0.
- Object of the present invention is to minimize the unfavorable scattering by the phosphor largely without using novel phosphor morphologies or eg ceramic moldings. It should therefore continue to be possible according to the invention to use phosphor powder (however, as sub-micron fine grain). Scattering phenomena are negligible especially when the light source (eg the InGaN / GaN chip) is as little as possible removed from a surface. Then, near-field phenomena occur, which favor light input from the primary light source into a material directly on the light source. This is the case as soon as the distance between the place of light generation and the material is much smaller than the wavelength to be coupled in.
- the light source eg the InGaN / GaN chip
- the present object can be achieved by means of a cost-effective, i. etched using a high space-time yield method, hollow cylinder into the surface of the InGaN / GaN chips etched.
- the subject matter of the present invention is thus a light-emitting semiconductor component with a semiconductor body (1) which, during operation of the - A-
- Semiconductor device emits electromagnetic radiation, with at least one first and at least one second electrical connection (2, 3), which are electrically conductively connected to the semiconductor body (1), wherein the semiconductor body (1) has a semiconductor layer sequence which is suitable in the operation of Semiconductor component electromagnetic radiation of a first wavelength range from the UV, blue and / or green spectral range to emit, and the semiconductor body (1) has a structured surface (4) containing hollow cylinder with parallel longitudinal axis, characterized in that the structured surface coated with one or more luminescence conversion materials is.
- the dependent claim 9 describes a method for producing the semiconductor device according to the invention and the subclaims 10 and 11 indicate preferred uses of the semiconductor device according to the invention.
- the semiconductor body (1) has a layer sequence (see FIG. 1, wherein the layer sequence is reproduced there only incompletely), in particular a layer sequence with an active semiconductor layer of Ga x lni -X N or Ga x Ali -x N which emits an electromagnetic radiation of a first wavelength range from the ultraviolet, blue and / or green spectral range during operation of the semiconductor component.
- a layer sequence see FIG. 1, wherein the layer sequence is reproduced there only incompletely
- a layer sequence with an active semiconductor layer of Ga x lni -X N or Ga x Ali -x N which emits an electromagnetic radiation of a first wavelength range from the ultraviolet, blue and / or green spectral range during operation of the semiconductor component.
- the structure of a conventional, typical semiconductor layer sequence can be found, for example, in DE 19638667 (see FIG. 9).
- the luminescence conversion materials on the surface of the semiconductor body (1) convert at least a portion of the radiation originating from the first wavelength range into radiation of a second wavelength range such that the semiconductor component Mixed radiation, in particular mixed-colored light, consisting of radiation of the first wavelength range or exclusively emits the second wavelength range.
- the one or more second wavelength ranges have substantially longer wavelengths than the first wavelength range.
- a second subregion of the first wavelength range and a second wavelength region are complementary to one another.
- mixed-color, in particular white light can be generated from a single colored light source, in particular a light-emitting diode with a single blue light emitting semiconductor body.
- the color temperature of the white light can be varied by suitable choice of the luminescence conversion material, in particular by a suitable choice of the phosphor or phosphor mixture, its particle size and its concentration.
- the semiconductor component according to the invention In addition to the preferred use of the semiconductor component according to the invention for converting the blue or near-UV emission into visible white radiation, it is further preferred for the semiconductor component according to the invention to convert primary radiation into a specific color point according to the color-on-demand concept.
- the color-on-demand concept is the realization of light of a certain color point with a pcLED using one or more phosphors. This concept is e.g. used to create certain corporate designs, e.g. for illuminated company logos, brands etc.
- the hollow cylinders on the structured surface (4) can have a diameter of 150 nm to 10 ⁇ m, and the depth of the holes can likewise be set by process parameters and is from 20 nm to 3 microns, preferably from 200 nm to 1, 5 microns (see Fig. 1 and 3). It is important that the hollow cylinder have a depth, so that the bottom of the hollow cylinder is in the immediate vicinity of the light-emitting layer.
- sub-micron sized phosphor powder are introduced. This can be done by several methods:
- Phosphors are introduced into a (volatile) dispersant.
- the dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary properties, the hollow cylinders in the semiconductor body (1) are fully saturated with the dispersion. The excess dispersion is removed by stripping with a non-wetting lip, leaving only the dispersion in the hollow cylinders. Now, in the case of a volatile dispersant, it is removed by heating. As a result, phosphor particles remain behind in the hollow cylinders.
- customary polymerizable dispersants used today for LED packaging such as silicone or epoxide derivatives. After wiping off excess dispersion, the dispersion present in the hollow cylinders is polymerized, whereby the phosphor is glued into the hollow cylinder.
- Phosphor precursors are introduced into a (volatile) dispersant.
- the dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary Properties suck the hollow cylinder in the semiconductor body (1) with the dispersion fully. The excess dispersion is removed by stripping with a non-wetting lip, leaving only the dispersion in the hollow cylinders. Now, in the case of a volatile dispersant, it is removed by heating. As a result, the phosphor precursors convert to phosphors that remain in the hollow cylinders.
- the semiconductor component is a primary light source which generates a very high luminous flux
- the outer surface of the semiconductor component is also coated with phosphor.
- the following methods are suitable:
- Phosphor powder is scattered on the surface (4).
- the hollow cylinders are filled and the outer surface of the semiconductor component is likewise coated with phosphor, (see FIG. 2, variant F).
- Phosphors are introduced into a (volatile) dispersant.
- the dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary properties, the hollow cylinders in the semiconductor body (1) are filled with the dispersion and the outer surface is coated with the dispersion. Now, in the case of a volatile dispersant, it is removed by heating. As a result, phosphor particles remain in the hollow cylinders and on the surface of the semiconductor device.
- customary polymerizable dispersants used today for LED packaging such as silicone or epoxide derivatives.
- Phosphor precursors are introduced into a (volatile) dispersant.
- the dispersion is dropped onto the surface (4) with a microdispenser.
- the hollow cylinders in the semiconductor body (1) are filled with the dispersion and the outer surface of the semiconductor device is coated.
- a volatile dispersant it is removed by heating.
- the phosphor precursors convert to phosphors remaining in the hollow cylinders and phosphors located on the outer surface of the semiconductor device.
- Conversion materials are mixtures of at least one or more
- Phosphors possibly understood in a resin and or binder.
- a further encapsulation with a transparent material and / or a component acting as secondary optics then takes place.
- the arrangement of the hollow cylinders on the structured surface (4) can be either photonically crystalline or photonic quasicrystalline (see FIG. 4).
- the hollow cylinders are arranged in a periodic, but in fact aperiodic structure (quasiperiodic structure).
- the person skilled in the art is aware of the differences between the two structures (see, for example, Appl. Phys. Lett. 78, No. 5, 2001, Pg 563).
- the advantages of the quasiperiodic structure over the photonically crystalline structure are that more pronounced photonic properties are observable. In the case of the semiconductor component according to the invention, this has the effect that the intensity of the primary radiation in the direction of the longitudinal axis of the hollow cylinder is particularly high.
- the following compounds can be selected as the material for the phosphors according to the invention, wherein in the following notation, to the left of the colon, the host lattice and, to the right of the colon, one or more doping elements are listed. When chemical elements are separated and bracketed by commas, they can optionally be used. Depending on the desired luminescence property of the phosphors, one or more of the compounds selected can be used:
- Sr 3 (PO 4) 2 Sn 2+, ß-Sr 3 (PO 4) 2: Sn 2+ , Mn 2+ (Al), SrS) Ce 3+ , SrS) Eu 2+ , SrS) Mn 2+ , SrS: Cu + , Na, SrSO 4 ) Bi, SrSO 4 ) Ce 3+ , SrSO 4 ) Eu 2 + , SrSO 4 : Eu 2+ , Mn 2+ , Sr 5 Si 4 O 10 Cl 6 ) Eu 2+ , Sr 2 SiO 4 ) Eu 2+ , SrTiO 3 ) Pr 3+ , SrTiO 3 : Pr 3+ , Al 3+ , Sr 3 WO 6 ) U, SrY 2 O 3 ) Eu 3+ , ThO 2 ) Eu 3+ , ThO 2 ) Pr 3+ , ThO 2 ) Tb 3+ , YAI 3 B 4 O 12 : Bi 3+ ,
- Zn 2 SiO 4 Mn 2+ , Zn 2 SiO 4 : Mn 2+ , As 5+ , Zn 2 SiO 4 ) Mn 1 Sb 2 O 2 , Zn 2 SiO 4 : Mn 2+ , P,
- Zn 2 SiO 4 T Tir 4 4+, ZnS) Sn -2+ ZnS) Sn 1 Ag, ZnS: Sn 2+ , Li + , ZnS) Te 1 Mn 1 ZnS-ZnTe) Mn 2+ , ZnSe: Cu + , CI, ZnWO 4
- the phosphor body consists of at least one of the following phosphor materials:
- the preparation of the phosphor materials used is carried out by conventional mixing and firing methods or preferably by wet-chemical methods.
- the wet-chemical preparation generally has the advantage that the resulting materials have a higher uniformity with respect to the stoichiometric composition, the particle size and the morphology of the particles.
- an aqueous precursor of the phosphors consisting, for example, of a mixture of yttrium nitrate, aluminum nitrate, cerium nitrate and gadolinium nitrate solution, the following known methods are preferred:
- spray pyrolysis also called spray pyrolysis
- aqueous or organic salt solutions educts
- nitrate solutions of the corresponding phosphorus are mixed with an NH 4 HCO 3 solution, whereby the phosphor precursor is formed.
- Spray pyrolysis belongs to the aerosol processes which are characterized by spraying solutions, suspensions or dispersions into a reaction chamber (reactor) which has been heated in different ways, as well as the formation and separation of solid particles.
- the thermal decomposition of the starting materials eg., Salts
- new materials eg., Oxides, mixed oxides
- Phosphorus precursors eg, amorphous or semi-crystalline or crystalline YAG doped with cerium
- the phosphor precursors are subjected to a single or multi-stage thermal aftertreatment to the finished phosphor powder, which can be done under reducing or oxidizing reaction gas atmosphere, in air or in vacuo.
- a further subject of the present invention is a method for producing a light-emitting semiconductor component comprising the following method steps:
- Composition of a layer-shaped semiconductor body (1) in a light-emitting semiconductor component containing inorganic light-emitting layers by conventional methods such as gas phase epitaxy, PVD 1 CVD, MOCVD, MBE (molecular beam epitaxy), LPE (liquid phase epitaxy) or when using organic - -
- light-emitting layers by conventional methods such as vapor deposition, spin coating or inkjet printing.
- the light source is a luminescent arrangement based on ZnO, TCO (transparent conducting oxide), ZnSe or SiC or else an arrangement based on an organic light-emitting layer.
- the light source is an electroluminescent arrangement that is activated by alternating electric fields ("Electroluminescent element"), for example so-called electroluminescent films of, for example, ZnS or doped ZnS.
- the semiconductor component contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the near UV spectral range at a wavelength ⁇ between 360 nm and 400 nm.
- the semiconductor component preferably contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the blue spectral range at a wavelength ⁇ between 420 and 470 nm.
- the semiconductor component preferably contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the green spectral range at a wavelength ⁇ between 510 and 550 nm.
- Fig. 1 Schematic sectional view of a semiconductor body, wherein the layer sequence is not completely sketched.
- A hollow cylinders filled with conversion materials
- B thickness of the layer which has the structured surface
- C structured surface (p-GaN)
- D light-emitting layer or interface in which charge carrier recombination and emission of photons occurs in the case of LEDs ,
- Fig.2 Schematic sectional view of the filling of the structured surface of a semiconductor body with conversion luminescent material on two different types: in the first alternative (E) only the cavities are filled with conversion phosphors, while in the second alternative (F) additionally the entire surface is coated with conversion phosphor.
- H thickness of the layer containing the structured surface: 100 nm - 3 ⁇ m
- J depth of the hollow cylinder: 10% - 95% of H
- K center distance of the hollow cylinder base: 300 nm - 20 ⁇ m
- Fig. 4 Schematic sectional view of the arrangement of the hollow cylinders photonically crystalline (left-hand arrangement) and photonic quasicrystalline (right-hand arrangement)
- Fig. 5 Schematic sectional view of an embodiment of a semiconductor device according to the invention with phosphor only in the hollow cylinders (normal LED design soldered with contact wire on LED top)
- Fig. 8 Schematic sectional view of an embodiment of a semiconductor device according to the invention with phosphor in the hollow cylinders and over the entire surface (normal LED design with contact wire on LED top side soldered)
- Fig. 5 is a semiconductor device with a normal LED design, wherein the conversion luminescent material (with a resin dispersion) is only in the hollow cylinders of the semiconductor body (1).
- the semiconductor body (1) and subregions of the electrical connections (2, 3) are enclosed by a further transparent cladding (6) which effects no change in wavelength of the radiation passing through the phosphor-containing structured surface (4) and, for example, from one in the LED technology usable transparent epoxy or other suitable radiation-transparent material such as Glass is made.
- a bonding wire (5) the surface of the semiconductor body (1) with a second electrical connection (3) is connected.
- the exemplary embodiment illustrated in FIG. 6 is a semiconductor component in flip-chip design (without contact wire on the LED). - i -
- Fig. 7 is a semiconductor device in the flip-chip design (without contact wire on the LED surface), wherein the phosphor powder (without resin dispersion) is in the hollow cylinders and on the surface (4).
- the semiconductor body (1) and subregions of the electrical connections (2, 3) are enclosed by a further transparent cladding (6) which does not cause any change in wavelength of the radiation passing through the phosphor-containing, structured surface (4).
- Fig. 8 is a semiconductor device with a normal LED design, wherein the conversion luminescent material (with a resin dispersion) in the hollow cylinders and the entire surface (4) of the semiconductor body (1) is located.
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Abstract
The invention relates to a light-emitting semiconductor component with a semiconductor body, wherein the surface thereof is structured and comprises a hollow cylinder with a parallel longitudinal axis. The surface is coated with one or more conversion phosphors. The invention further relates to a method for the production of the semiconductor component, and to the use of the light-emitting semiconductor component for the conversion of the primary radiation of the semiconductor component into longer-wave monochromatic or multichromatic radiation, preferably for the conversion of the blue emission in visible white radiation.
Description
Emitter-converter-chip Emitter converter chip
Die Erfindung betrifft ein lichtabstrahlendes Halbleiterbauelement mit einem Halbleiterkörper, dessen Oberfläche strukturiert ist und Hohlzylinder mit paralleler Längsachse besitzt, wobei die Oberfläche mit einem oder mehreren Konversionsleuchtstoffen beschichtet ist, ein Verfahren zur Herstellung des Halbleiterbauelementes sowie die Verwendung des lichtabstrahlenden Halbleiterbauelementes zur Konversion der Primärstrahlung des Halbleiterbauelementes in längerwellige monochromatische oder multichromatische Strahlung, vorzugsweise zur Konversion der blauen Emission in sichtbare weiße Strahlung.The invention relates to a light-emitting semiconductor component with a semiconductor body whose surface is structured and has hollow cylinders with parallel longitudinal axis, wherein the surface is coated with one or more conversion phosphors, a method for producing the semiconductor device and the use of the light-emitting semiconductor device for converting the primary radiation of the semiconductor device in longer wavelength monochromatic or multichromatic radiation, preferably for converting the blue emission into visible white radiation.
Seit Mitte der 90'er Jahre existieren Konzepte, weißes Licht für u.a. Allgemeinbeleuchtung, Automobile, Signale, Hintergrundbeleuchtung von LCD, etc. mit Hilfe von Leuchtdioden zu realisieren. Bereits ab 2010 sollen weiße LEDs Glühfadenlampen (Glühbirne, Halogenbirne) und Hg-Plasma- Fluoreszenzlampen etc. in großem Ausmaße substituieren. Es wird geschätzt, dass weiße LEDs ohne Ansteuerung und Integration in Beleuchtungsgehäuse (d. h. Einbau in Scheinwerfer, Lampen etc) in 2020 50% des Gesamtleuchtmittelmarktes (in 2007 ca. 27 Mrd. € weltweit) ausmachen, d. h. das dominierende Beleuchtungsmittel darstellen werden. Hierfür müssen allerdings mehrere Voraussetzungen in naher Zukunft erfüllt werden:Since the mid-90s, concepts exist, white light for u.a. General lighting, automobiles, signals, backlighting of LCD, etc. with the help of light emitting diodes to realize. As early as 2010, white LEDs should replace filament lamps (incandescent bulb, halogen bulb) and Hg plasma fluorescent lamps, etc., to a large extent. It is estimated that white LEDs without control and integration into lighting housings (ie installation in headlamps, lamps, etc.) in 2020 will account for 50% of the total lighting market (in 2007, approximately € 27 billion worldwide); H. will be the dominant lighting device. For this, however, several conditions must be met in the near future:
Die derzeit kommerziell erhältlichen, besten Höchstleistungs-weißen LEDs erreichen Lumeneffizienzen von ca. 40 Im/W, damit sind diese bereits heute bedeutend effizienter als Glühbirnen, effizienter als Halogenlampen, aber (noch) nicht so effizient wie Leuchtstoffröhren, welche eine Lumeneffizienz bis zu 100 Im/W erreichen können, was gleichzeitig das Limit dieser Technologie darstellt.
Theoretisch könnten LEDs bis zu 300 Im/W erreichen, d.h. dreifach effizienter als Leuchtstoffröhren sein. Allerdings sind die Herausforderungen hierfür immens.Currently, the best commercially available, best-performing white LEDs achieve lumen efficiencies of approximately 40 lm / W, making them significantly more efficient than incandescent bulbs, more efficient than halogen bulbs, but not (yet) as efficient as fluorescent tubes with a lumen efficiency of up to 100 In / W can achieve what also represents the limit of this technology. Theoretically, LEDs could reach up to 300 Im / W, which is three times more efficient than fluorescent tubes. However, the challenges are immense.
1) Der blau elektrolumineszierende Emitterchip aus InGaN/GaN ist bezüglich der intrinsischen Quantenausbeute praktisch ausgereizt (lediglich die Produktionskosten sind immens), aber eine Erhöhung der Lichtauskopplung aus dem Chip ist noch möglich, indem die Totalreflektion, welche ein Teil das im Innern des Chips entstehenden Elektrolumineszenzlichtes erleidet, unterbunden wird.1) The blue electroluminescent InGaN / GaN emitter chip is practically exhausted in terms of intrinsic quantum efficiency (only the production costs are immense), but an increase of the light extraction from the chip is still possible by the total reflection, which is part of the inside of the chip Electroluminescent light suffers, is suppressed.
2) Der Leuchtstoff (heutzutage Grobkörner aus dotiertem YAG, TAG (Terbium-Granat) oder dotierten Silikaten ist der Hauptverursacher der geringen Lumeneffizienz und der schlechten Farbwiedergabe des weißen Lichtes: Zum Einen verfügt er über nicht optimale Fluoreszenzcharakteristika; für ein angenehmes Weißlicht fehlt der erforderliche Rotanteil im Emissionsspektrum. Außerdem wird ein viel zu geringer Anteil des Elektrolumineszenzlichtes vom Leuchtstoff absorbiert und von diesem in Licht größerer Wellenlänge konvertiert. Dies rührt daher, dass die optische Ankopplung des Leuchtstoffes an den Chip ungenügend ist. Ein großer Anteil des blauen Lichtes wird nicht vom hochbrechenden Leuchtstoff absorbiert, sondern an dessen Oberfläche gestreut. Bei Rückstreuung zum Chip hin, reabsorbiert er sein vormals emittiertes Blaulicht, da die Stokesverschiebung (energetischer Abstand zwischen Absorption und Emission) von Halbleitern extrem klein ist, d.h. Verschiebung → 0.2) The phosphor (nowadays grains of doped YAG, TAG (terbium garnet) or doped silicates) is the main cause of low lumen efficiency and poor color rendering of white light: first, it does not have optimal fluorescence characteristics, and the required white light is lacking In addition, a much too low proportion of the electroluminescent light is absorbed by the phosphor and converted by it into light of longer wavelengths, because the optical coupling of the phosphor to the chip is insufficient When scattered back to the chip, it reabsorbs its formerly emitted blue light, since the Stokes shift (energy gap between absorption and emission) of semiconductors is extremely small, ie, shift → 0.
Aufgabe der vorliegenden Erfindung ist es die ungünstige Streuung durch den Leuchtstoff weitgehend zu minimieren, ohne neuartige Leuchtstoffmorphologien oder z.B. Keramik-Formkörper einzusetzen. Es soll somit erfindungsgemäß weiterhin die Möglichkeit bestehen, Leuchtstoffpulver (allerdings als sub-μm Feinkorn) zu verwenden.
Streuphänomene sind insbesondere dann vernachlässigbar, wenn die Lichtquelle (z.B der InGaN/GaN-Chip) von einer Oberfläche möglichst wenig entfernt ist. Dann treten auch Nahfeldphänomene auf, welche eine Lichteinkoppelung von der Primärlichtquelle in ein direkt auf der Lichtquelle vorhandenes Material begünstigen. Dies ist der Fall, sobald die Entfernung zwischen dem Ort der Lichtentstehung und dem Material viel kleiner ist als die einzukoppelnde Wellenlänge. Auf die LED übertragen bedeutet dies, dass sich der Leuchtstoff direkt auf der Schicht befinden sollte, in welcher die Ladungsträgerrekombination und dadurch Entstehung der Photonen stattfindet. Im Falle von Leuchtstoffpulvern ist dies aber nicht möglich, weil in Abhängigkeit der meist unregelmäßigen, annähernd sphärischen Form der Leuchtstoffpartikel nur ein sehr kleiner Anteil direkt auf der Chipoberfläche aufliegen kann, welche aber in einen Abstand von der lichtaussendenden Schicht ist, der vergleichbar oder größer der Wellenlänge des emittierten Lichtes ist.Object of the present invention is to minimize the unfavorable scattering by the phosphor largely without using novel phosphor morphologies or eg ceramic moldings. It should therefore continue to be possible according to the invention to use phosphor powder (however, as sub-micron fine grain). Scattering phenomena are negligible especially when the light source (eg the InGaN / GaN chip) is as little as possible removed from a surface. Then, near-field phenomena occur, which favor light input from the primary light source into a material directly on the light source. This is the case as soon as the distance between the place of light generation and the material is much smaller than the wavelength to be coupled in. Translated to the LED this means that the phosphor should be located directly on the layer in which the charge carrier recombination and thereby generation of the photons takes place. In the case of phosphor powders, however, this is not possible because, depending on the usually irregular, approximately spherical shape of the phosphor particles, only a very small proportion can rest directly on the chip surface, but which is at a distance from the light-emitting layer that is comparable or larger than that Wavelength of the emitted light is.
Stattdessen wäre es vorteilhaft, feine Leuchtstoffpulver direkt in den Chip zu in integrieren, und zwar möglichst nahe dem aktiven Bereich, in dem die Strahlung entsteht.Instead, it would be advantageous to integrate fine phosphor powders directly into the chip, as near as possible to the active region in which the radiation is generated.
Überraschenderweise kann die vorliegende Aufgabe dadurch gelöst werden, in dem man mittels einem kostengünstigen, d.h. über eine hohe Raumzeitausbeute verfügenden Verfahren, Hohlzylinder in die Oberfläche des InGaN/GaN-Chips ätzt.Surprisingly, the present object can be achieved by means of a cost-effective, i. etched using a high space-time yield method, hollow cylinder into the surface of the InGaN / GaN chips etched.
In der Veröffentlichung Park et al., Appl. Phys. Lett, 2005, 87, 203508 wird ein derartiges Verfahren zur Strukturierung von Chips beschrieben. Die Autoren verwenden diese Strukturierung zur Erhöhung der Lichtauskopplung aus dem Chip durch Beugungseffekte.In the publication Park et al., Appl. Phys. Lett, 2005, 87, 203508 describes such a method for structuring chips. The authors use this structuring to increase the light extraction from the chip by diffraction effects.
Gegenstand der vorliegenden Erfindung ist somit ein lichtabstrahlendes Halbleiterbauelement mit einem Halbleiterkörper (1), der im Betrieb des
- A-The subject matter of the present invention is thus a light-emitting semiconductor component with a semiconductor body (1) which, during operation of the - A-
Halbleiterbauelements elektromagnetische Strahlung aussendet, mit mindestens einem ersten und mindestens einem zweiten elektrischen Anschluss (2, 3), die mit dem Halbleiterkörper (1) elektrisch leitend verbunden sind, wobei der Halbleiterkörper (1) eine Halbleiterschichtenfolge aufweist, die geeignet ist, im Betrieb des Halbleiterbauelementes elektromagnetische Strahlung eines ersten Wellenlängenbereiches aus dem UV, blauen und/oder grünen Spektralbereich auszusenden, und der Halbleiterkörper (1) eine strukturierte Oberfläche (4) enthaltend Hohlzylinder mit paralleler Längsachse besitzt, gekennzeichnet dadurch, dass die strukturierte Oberfläche mit einem oder mehreren Lumineszenzkonversionsmaterialien beschichtet ist.Semiconductor device emits electromagnetic radiation, with at least one first and at least one second electrical connection (2, 3), which are electrically conductively connected to the semiconductor body (1), wherein the semiconductor body (1) has a semiconductor layer sequence which is suitable in the operation of Semiconductor component electromagnetic radiation of a first wavelength range from the UV, blue and / or green spectral range to emit, and the semiconductor body (1) has a structured surface (4) containing hollow cylinder with parallel longitudinal axis, characterized in that the structured surface coated with one or more luminescence conversion materials is.
Vorteilhafte Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche 2 bis 8. Der Unteranspruch 9 beschreibt ein Verfahren zur Herstellung des erfindungsgemäßen Halbleiterbauelements und die Unteransprüche 10 und 11 geben bevorzugte Verwendungsmöglichkeiten des erfindungsgemäßen Halbleiterbauelementes an.Advantageous developments of the invention are subject of the dependent claims 2 to 8. The dependent claim 9 describes a method for producing the semiconductor device according to the invention and the subclaims 10 and 11 indicate preferred uses of the semiconductor device according to the invention.
Es ist vorgesehen, dass der Halbleiterkörper (1) eine Schichtenfolge (siehe Abb. 1 , wobei die Schichtenfolge dort nur unvollständig wiedergegeben ist), insbesondere eine Schichtenfolge mit einer aktiven Halbleiterschicht aus Gaxlni-XN oder GaxAli-xN aufweist, die im Betrieb des Halbleiterbauelements eine elektromagnetische Strahlung eines ersten Wellenlängenbereiches aus dem ultravioletten, blauen und/oder grünen Spektralbereich aussendet. Der Aufbau einer herkömmlichen, typischen Halbleiterschichtenfolge ist z.B. aus DE 19638667 (siehe Fig. 9) zu entnehmen.It is provided that the semiconductor body (1) has a layer sequence (see FIG. 1, wherein the layer sequence is reproduced there only incompletely), in particular a layer sequence with an active semiconductor layer of Ga x lni -X N or Ga x Ali -x N which emits an electromagnetic radiation of a first wavelength range from the ultraviolet, blue and / or green spectral range during operation of the semiconductor component. The structure of a conventional, typical semiconductor layer sequence can be found, for example, in DE 19638667 (see FIG. 9).
Die Lumineszenzkonversionsmaterialien auf der Oberfläche des Halbleiterkörpers (1) wandeln mindestens einen Teil der aus dem ersten Wellenlängenbereich stammenden Strahlung in Strahlung eines zweiten Wellenlängenbereichs um, derart, dass das Halbleiterbauelement
Mischstrahlung, insbesondere mischfarbiges Licht, bestehend aus Strahlung des ersten Wellenlängenbereiches oder ausschließlich des zweiten Wellenlängenbereiches aussendet. Erfindungsgemäß bevorzugt ist es, dass der oder die zweiten Wellenlängenbereiche im wesentlichen größere Wellenlängen aufweisen als der erste Wellenlängenbereich. Insbesondere ist vorgesehen, dass ein zweiter Teilbereich des ersten Wellenlängenbereich und ein zweiter Wellenlängenbereich zueinander komplementär sind. Auf diese Weise kann aus einer einzigen farbigen Lichtquelle, insbesondere einer Leuchtdiode mit einem einzigen blaues Licht abstrahlenden Halbleiterkörper, mischfarbiges, insbesondere weißes Licht erzeugt werden. Die Farbtemperatur des weißen Lichtes kann dabei durch geeignete Wahl des Lumineszenzkonversionsmaterials, insbesondere durch eine geeignete Wahl des Leuchtstoffes oder Leuchtstoffgemisches, dessen Partikelgröße und dessen Konzentration, variiert werden.The luminescence conversion materials on the surface of the semiconductor body (1) convert at least a portion of the radiation originating from the first wavelength range into radiation of a second wavelength range such that the semiconductor component Mixed radiation, in particular mixed-colored light, consisting of radiation of the first wavelength range or exclusively emits the second wavelength range. According to the invention it is preferred that the one or more second wavelength ranges have substantially longer wavelengths than the first wavelength range. In particular, it is provided that a second subregion of the first wavelength range and a second wavelength region are complementary to one another. In this way, mixed-color, in particular white, light can be generated from a single colored light source, in particular a light-emitting diode with a single blue light emitting semiconductor body. The color temperature of the white light can be varied by suitable choice of the luminescence conversion material, in particular by a suitable choice of the phosphor or phosphor mixture, its particle size and its concentration.
Neben der bevorzugten Verwendung des erfindungsgemäßen Halbleiterbauelementes zur Konversion der blauen oder im nahen UV- liegenden Emission in sichtbare weiße Strahlung ist es weiterhin bevorzugt, dass das erfindungsgemäße Halbleiterbauelement Primärstrahlung in einen bestimmten Farbpunkt nach dem Color-on-demand-Konzept konvertiert.In addition to the preferred use of the semiconductor component according to the invention for converting the blue or near-UV emission into visible white radiation, it is further preferred for the semiconductor component according to the invention to convert primary radiation into a specific color point according to the color-on-demand concept.
Unter dem Color-on-demand Konzept versteht man die Realisierung von Licht eines bestimmten Farbpunktes mit einer pcLED unter Einsatz eines oder mehrer Leuchtstoffe. Dieses Konzept wird z.B. verwendet, um bestimmte Corporate Designs z.B. für beleuchtete Firmenlogos, Marken etc. zu erzeugen.The color-on-demand concept is the realization of light of a certain color point with a pcLED using one or more phosphors. This concept is e.g. used to create certain corporate designs, e.g. for illuminated company logos, brands etc.
Die Hohlzylinder auf der strukturierten Oberfläche (4) können erfindungsgemäß einen Durchmesser von 150 nm bis 10 μm aufweisen, die Tiefe der Löcher kann ebenfalls durch Prozessparameter eingestellt
werden und beträgt von 20 nm bis 3 μm, vorzugsweise von 200 nm bis 1 ,5 μm (siehe Abb. 1 und 3). Wichtig dabei ist, dass die Hohlzylinder eine Tiefe aufweisen, so dass sich der Boden der Hohlzylinder in unmittelbarer Nähe der lichtemittierenden Schicht befindet.According to the invention, the hollow cylinders on the structured surface (4) can have a diameter of 150 nm to 10 μm, and the depth of the holes can likewise be set by process parameters and is from 20 nm to 3 microns, preferably from 200 nm to 1, 5 microns (see Fig. 1 and 3). It is important that the hollow cylinder have a depth, so that the bottom of the hollow cylinder is in the immediate vicinity of the light-emitting layer.
In die Hohlzylinder werden bevorzugt sub-μm große Leuchtstoffpulver eingebracht. Dies kann mittels mehrerer Verfahren durchgeführt werden:In the hollow cylinder preferably sub-micron sized phosphor powder are introduced. This can be done by several methods:
• Leuchtstoffpulver wird auf die Oberfläche (4) aufgestreut und danach überschüssiges Pulver mit einer Gummilippe abgerieben. Hierbei bleibt ausschließlich das Pulver zurück, welches sich in den Vertiefungen der Hohlzylinder befindet (siehe Abb.2, Variante E)• Phosphor powder is sprinkled on the surface (4) and then rubbed off excess powder with a rubber lip. Here, only the powder remains, which is located in the recesses of the hollow cylinder (see Fig.2, variant E)
• Leuchtstoffe werden in ein (leichtflüchtiges) Dispergiermittel eingebracht. Die Dispersion wird auf die Oberfläche (4) mit einem Mikrodispenser aufgetropft. Wegen ihrer kapillaren Eigenschaften saugen sich die Hohlzylinder im Halbleiterkörper (1) mit der Dispersion voll. Die überschüssige Dispersion wird durch Abstreifen mit einer nichtbenetzenden Lippe entfernt, wobei lediglich die Dispersion in den Hohlzylindern zurückbleibt. Nun wird im Falle eines leichtflüchtigen Dispersionsmittels diese durch Erhitzen entfernt. Als Resultat bleiben Leuchtstoffpartikel in den Hohlzylindern zurück. Andererseits können auch übliche, heutzutage für das LED-packaging verwendete, polymerisierbare Dispergiermittel, wie Silikon- oder Epoxid-Derivate verwendet werden. Nach dem Abwischen überschüssiger Dispersion wird die in den Hohlzylindern vorhandene Dispersion polymerisiert, wodurch der Leuchtstoff in die Hohlzylinder eingeklebt wird.• Phosphors are introduced into a (volatile) dispersant. The dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary properties, the hollow cylinders in the semiconductor body (1) are fully saturated with the dispersion. The excess dispersion is removed by stripping with a non-wetting lip, leaving only the dispersion in the hollow cylinders. Now, in the case of a volatile dispersant, it is removed by heating. As a result, phosphor particles remain behind in the hollow cylinders. On the other hand, it is also possible to use customary polymerizable dispersants used today for LED packaging, such as silicone or epoxide derivatives. After wiping off excess dispersion, the dispersion present in the hollow cylinders is polymerized, whereby the phosphor is glued into the hollow cylinder.
• Leuchtststoff-Vorstufen werden in ein (leichtflüchtiges) Dispergiermittel eingebracht. Die Dispersion wird auf die Oberfläche (4) mit einem Mikrodispenser aufgetropft. Wegen ihrer kapillaren
Eigenschaften saugen sich die Hohlzylinder im Halbleiterkörper (1) mit der Dispersion voll. Die überschüssige Dispersion wird durch Abstreifen mit einer nichtbenetzenden Lippe entfernt, wobei lediglich die Dispersion in den Hohlzylindern zurückbleibt. Nun wird im Falle eines leichtflüchtigen Dispersionsmittels diese durch Erhitzen entfernt. Als Resultat wandeln sich die Leuchtstoff-Vorstufen in Leuchtstoffe um, die in den Hohlzylindern zurück bleiben.• Phosphor precursors are introduced into a (volatile) dispersant. The dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary Properties suck the hollow cylinder in the semiconductor body (1) with the dispersion fully. The excess dispersion is removed by stripping with a non-wetting lip, leaving only the dispersion in the hollow cylinders. Now, in the case of a volatile dispersant, it is removed by heating. As a result, the phosphor precursors convert to phosphors that remain in the hollow cylinders.
Insbesondere dann, wenn es sich bei dem Halbleiterbauelement um eine Primärlichtquelle handelt, die einen sehr hohen Lichtstrom erzeugt, ist es vorteilhaft, wenn neben den Hohlzylindern auch die äußere Oberfläche des Halbleiterbauelementes mit Leuchtstoff beschichtet ist. Hierzu eignen sich die nachfolgenden Verfahren:In particular, when the semiconductor component is a primary light source which generates a very high luminous flux, it is advantageous if, in addition to the hollow cylinders, the outer surface of the semiconductor component is also coated with phosphor. For this purpose, the following methods are suitable:
• Leuchtstoffpulver wird auf die Oberfläche (4) aufgestreut. Hierbei werden die Hohlzylinder gefüllt unde die äußere Oberfläche des Halbleiterbauelementes wird ebenfalls mit Leuchtstoff beschichtet, (siehe Abb.2, Variante F)• Phosphor powder is scattered on the surface (4). In this case, the hollow cylinders are filled and the outer surface of the semiconductor component is likewise coated with phosphor, (see FIG. 2, variant F).
• Leuchtstoffe werden in ein (leichtflüchtiges) Dispergiermittel eingebracht. Die Dispersion wird auf die Oberfläche (4) mit einem Mikrodispenser aufgetropft. Wegen ihrer kapillaren Eigenschaften saugen sich die Hohlzylinder im Halbleiterkörper (1) mit der Dispersion voll und die äußere Oberfläche wird mit der Dispersion beschichtet. Nun wird im Falle eines leichtflüchtigen Dispersionsmittels diese durch Erhitzen entfernt. Als Resultat bleiben Leuchtstoffpartikel in den Hohlzylindern und auf der Oberfläche des Halbleiterbauelementes zurück. Andererseits können auch übliche, heutzutage für das LED-packaging verwendete, polymerisierbare Dispergiermittel, wie Silikon- oder Epoxid-Derivate verwendet werden.
- -• Phosphors are introduced into a (volatile) dispersant. The dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary properties, the hollow cylinders in the semiconductor body (1) are filled with the dispersion and the outer surface is coated with the dispersion. Now, in the case of a volatile dispersant, it is removed by heating. As a result, phosphor particles remain in the hollow cylinders and on the surface of the semiconductor device. On the other hand, it is also possible to use customary polymerizable dispersants used today for LED packaging, such as silicone or epoxide derivatives. - -
• Leuchtstoff-Vorstufen werden in ein (leichtflüchtiges) Dispergiermittel eingebracht. Die Dispersion wird auf die Oberfläche (4) mit einem Mikrodispenser aufgetropft. Wegen ihrer kapillaren Eigenschaften saugen sich die Hohlzylinder im Halbleiterkörper (1) mit der Dispersion voll und die äußere Oberfläche des Halbleiterbauelemetes wird beschichtet. Nun wird im Falle eines leichtflüchtigen Dispersionsmittels diese durch Erhitzen entfernt. Als Resultat wandeln sich die Leuchtstoff-Vorstufen in Leuchtstoffe um, die in den Hohlzylindem zurück bleiben und Leuchtstoffe, die sich auf der äußeren Oberfläche des Halbleiterbauelementes befinden.• Phosphor precursors are introduced into a (volatile) dispersant. The dispersion is dropped onto the surface (4) with a microdispenser. Because of their capillary properties, the hollow cylinders in the semiconductor body (1) are filled with the dispersion and the outer surface of the semiconductor device is coated. Now, in the case of a volatile dispersant, it is removed by heating. As a result, the phosphor precursors convert to phosphors remaining in the hollow cylinders and phosphors located on the outer surface of the semiconductor device.
Danach erfolgt eine Verkapselung des erfindungsgemäßen Aufbaus mit transparentem Material.This is followed by encapsulation of the structure according to the invention with transparent material.
Vor oder nach der Verkapselung können in einer weiteren bevorzugten erfindungsgemäßen Ausführungsform weitere Konversionsmaterialien auf das Halbleiterbauelement aufgebracht werden. Als Konversionsmaterialien werden hier Mischungen aus mindestens einem oder mehrerenBefore or after the encapsulation, in a further preferred embodiment according to the invention further conversion materials can be applied to the semiconductor component. Conversion materials here are mixtures of at least one or more
Leuchtstoffen eventuell in einem Harz und oder Binder verstanden.Phosphors possibly understood in a resin and or binder.
In einer weiteren bevorzugten erfindungsgemäßen Ausführungsform findet danach eine weitere Verkapselung mit einem transparenten Material und oder einem als Sekundäroptik wirkendem Bauteil statt.In a further preferred embodiment according to the invention, a further encapsulation with a transparent material and / or a component acting as secondary optics then takes place.
Die Anordnung der Hohlzylinder auf der strukturierten Oberfläche (4) kann je nach Anwendung entweder photonisch kristallin oder photonisch quasikristallin sein (siehe Abb. 4). In der photonisch quasikristallinen Anordnung sind die Hohlzylinder in einer periodischen, in Wahrheit aber aperiodischen Struktur angeordnet (quasiperiodische Struktur). Dem Fachmann sind die Unterschiede beider Strukturen bekannt (siehe z.B. Appl. Phys. Lett. 78, Nr. 5, 2001 , Pg 563). Die Vorteile der quasiperiodischen Struktur gegenüber der photonisch kristallinen Struktur
bestehen darin, dass stärker ausgeprägte photonische Eigenschaften beobachtbar sind. Im Falle des erfindungsgemäßen Halbleiterbauelementes wirkt sich dies dadurch aus, dass die Intensität der Primärstrahlung in Richtung der Längsachse der Hohlzylinder besonders hoch ist.Depending on the application, the arrangement of the hollow cylinders on the structured surface (4) can be either photonically crystalline or photonic quasicrystalline (see FIG. 4). In the photonic quasicrystalline arrangement, the hollow cylinders are arranged in a periodic, but in fact aperiodic structure (quasiperiodic structure). The person skilled in the art is aware of the differences between the two structures (see, for example, Appl. Phys. Lett. 78, No. 5, 2001, Pg 563). The advantages of the quasiperiodic structure over the photonically crystalline structure are that more pronounced photonic properties are observable. In the case of the semiconductor component according to the invention, this has the effect that the intensity of the primary radiation in the direction of the longitudinal axis of the hollow cylinder is particularly high.
Als Material für die erfindungsgemäßen Leuchtstoffe können insbesondere folgende Verbindungen gewählt werden, wobei in der folgenden Notation links vom Doppelpunkt das Wirtsgitter und rechts vom Doppelpunkt ein oder mehrere Dotierelemente aufgeführt sind. Wenn chemische Elemente durch Kommata voneinander getrennt und eingeklammert sind, können sie wahlweise verwendet werden. Je nach gewünschter Lumineszenzeigenschaft der Leuchtstoffe können eine oder auch mehrere der zur Auswahl gestellten Verbindungen herangezogen werden:In particular, the following compounds can be selected as the material for the phosphors according to the invention, wherein in the following notation, to the left of the colon, the host lattice and, to the right of the colon, one or more doping elements are listed. When chemical elements are separated and bracketed by commas, they can optionally be used. Depending on the desired luminescence property of the phosphors, one or more of the compounds selected can be used:
BaAI2O4)Eu2+, BaAI2S4)Eu2+, BaB8O1-3)Eu2+, BaF2, BaFBrEu2+, BaFCLEu2+, BaFCLEu2+, Pb2+, BaGa2S4)Ce3+, BaGa2S4)Eu2+, Ba2Li2Si2 O7)Eu2+, Ba2Li2Si2 O7)Sn2+, Ba2Li2Si2 O7)Sn2+, Mn2+, BaMgAI10Oi7)Ce3+, BaMgAI10O17)Eu2+, BaMgAI10O17)Eu2+, Mn2+, Ba2Mg3F10)Eu2+, BaMg3F8)Eu2+, Mn2+, Ba2MgSi2O7)Eu2+, BaMg2Si2O7)Eu2+, Ba5(PO4)3CI:Eu2+, Ba5(PO4)SCI)U, Ba3(PO4)2:Eu2+, BaS)Au1K, BaSO4)Ce3+, BaSO4)Eu2+, Ba2SiO4:Ce3+,Li+,Mn2+, Ba5SiO4CI6)Eu2+, BaSi2O5)Eu2+, Ba2SiO4)Eu2+, BaSi2O5)Pb2+, BaxSrii-xF2:Eu2+, BaSrMgSi2O7)Eu2+, BaTiP2O7, (Ba1Ti)2P2O7)Ti, Ba3WO6)U, BaY2F8 Er3+,Yb+, Be2SiO4)Mn2+, Bi4Ge3O12, CaAI2O4)Ce3+, CaLa4O7)Ce3+, CaAI2O4)Eu2+, CaAI2O4)Mn2+, CaAI4O7)Pb2+, Mn2+, CaAI2O4)Tb3+, Ca3AI2Si3O12)Ce3+, Ca3AI2Si3Oi2)Ce3+, Ca3AI2Si3O12)Eu2+, Ca2B5O9Br)Eu2+, Ca2B5O9CI)Eu2+, Ca2B5O9CI)Pb2+, CaB2O4)Mn2+, Ca2B2O5)Mn2+, CaB2O4)Pb2+, CaB2P2O9)Eu2+, Ca5B2SiO10)Eu3+, Ca0.5Ba0 5AI12O19:Ce3+,Mn2+, Ca2Ba3(PO4)3CI:Eu2+, CaBr2)Eu2+ in SiO2, CaCI2)Eu2+ in SiO2, CaCI2:Eu2+,Mn2+ in SiO2, CaF2)Ce3+, CaF2:Ce3+,Mn2+, CaF2)Ce3+Jb3+, CaF2)Eu2+, CaF2)Mn2+, CaF2)U, CaGa2O4)Mn2+, CaGa4O7)Mn2+, CaGa2S4)Ce3+, CaGa2S4)Eu2+, CaGa2S4)Mn2+, CaGa2S4)Pb2+, CaGeO3)Mn2+, CaI2)Eu2+ in SiO2, Cal2:Eu2+,Mn2+ in SiO2, CaLaBO4)Eu3+, CaLaB3O7)Ce3+, Mn2+,
Ca2La2BO6-SiPb2+, Ca2MgSi2O7, Ca2MgSi2O7:Ce3+, CaMgSi2O6)Eu2+, Ca3MgSi2O8IEu2+, Ca2MgSi2O7)Eu2+, CaMgSi2O6:Eu2+,Mn2+, Ca2MgSi2O7:Eu2+,Mn2+, CaMoO4, CaMoO4)Eu3+, CaO)Bi3+, CaO)Cd2+, CaO)Cu+, CaO)Eu3+, CaO)Eu3+, Na+, CaO)Mn2+, CaO)Pb2+, CaO)Sb3+, CaO)Sm3+, CaO)Tb3+, CaO)TI, CaCZn2+, Ca2P2O7)Ce3+, α-Ca3(PO4)2:Ce3+, ß-Ca3(PO4)2)Ce3+, Ca5(PO4)3CI:Eu2+, Ca5(PO4)3CI:Mn2+, Ca5(PO4)3CI:Sb3+, Ca5(Pθ4)3CI:Sn2+, ß-Ca3(PO4)2:Eu2+,Mn2+, Ca5(PO4)3F:Mn2+, Cas(PO4)3F:Sb3+, Cas(PO4)3F:Sn2+, α-Ca3(PO4)2:Eu2+, ß-Ca3(PO4)2:Eu2+, Ca2P2O7)Eu2+, Ca2P2O7:Eu2+,Mn2+, CaP2O6)Mn2+, α-Ca3(PO4)2:Pb2+, α- Ca3(PO4)2:Sn2+, ß-Ca3(PO4)2:Sn2+, ß-Ca2P2O7:Sn,Mn, α-Ca3(PO4)2:Tr, CaS)Bi3+, CaS:Bi3+,Na, CaS)Ce3+, CaS)Eu2+, CaS:Cu+,Na+, CaS)La3+, CaS)Mn2+, CaSO4)Bi, CaSO4)Ce3+, CaSO4:Ce3+,Mn2+, CaSO4)Eu2+, CaSO4:Eu2+,Mn2+, CaSO4)Pb2+, CaS)Pb2+, CaS:Pb2+,CI, CaS:Pb2+,Mn2+, CaS:Pr3+,Pb2+,CI, CaS)Sb3+, CaS:Sb3+,Na, CaS)Sm3+, CaS)Sn2+, CaS:Sn2+,F, CaS)Tb3+, CaS:Tb3+,CI, CaS)Y3+, CaS)Yb2+, CaS:Yb2+,CI, CaSiO3)Ce3+, Ca3SiO4CI2)Eu2+, Ca3SiO4CI2)Pb2+, CaSiO3)Eu2+, CaSiO3:Mn2+,Pb, CaSiO3)Pb2+, CaSiO3:Pb2+,Mn2+, CaSiO3)Ti4+, CaSr2(PO4)2:Bi3+, ß-(Ca,Sr)3(PO4)2:Sn2+Mn2+, CaTi0.9AI0.iO3:Bi3+, CaTiO3)Eu3+, CaTiO3)Pr3+, Ca5(VO4J3CI, CaWO4, CaWO4)Pb2+, CaWO4)W, Ca3WO6)U, CaYAIO4)Eu3+, CaYBO4)Bi3+, CaYBO4)Eu3+, CaYBo.8O3.7:Eu3+, CaY2ZrO6)Eu3+, (Ca1Zn1Mg)3(PO4J2)Sn, CeF3, (Ce1Mg)BaAInOi8)Ce, (Ce1Mg)SrAI1 IO18)Ce, CeMgAInO19)Ce)Tb, Cd2B6On)Mn2+, CdS:Ag+,Cr, CdS)In, CdS)In, CdS)In1Te1 CdS)Te1 CdWO4, CsF, CsI, CsI)Na+, CsI)TI1 (ErCI3)o.25(BaCI2)0.75, GaN)Zn1 Gd3Ga5O12)Cr3+, Gd3Ga5O12)Cr1Ce, GdNbO4)Bi3+, Gd2O2S)Eu3+, Gd2O2Pr3*, Gd2O2S)Pr1Ce1F1 Gd2O2S)Tb3+, Gd2SiO5)Ce3+, KAI11O17)Tr, KGa11O17)Mn2+, K2La2Ti3O10)Eu, KMgF3)Eu2+, KMgF3)Mn2+, K2SiF6)Mn4+, LaAI3B4O12)Eu3+, LaAIB2O6)Eu3+, LaAIO3)Eu3+, LaAIO3)Sm3+, LaAsO4)Eu3+, LaBr3)Ce3+, LaBO3)Eu3+, (La1Ce1Tb)PO4)Ce)Tb, LaCI3)Ce3+, La2O3)Bi3+, LaOBrTb3+, LaOBrTm3+, LaOCI)Bi3+, LaOCI)Eu3+, LaOF)Eu3+, La2O3)Eu3+, La2O3)Pr3+, La2O2S)Tb3+, LaPO4)Ce3+, LaPO4)Eu3+, LaSiO3CI)Ce3+, LaSiO3CI)Ce3+Jb3+, LaVO4)Eu3+, La2W3O12)Eu3+, LiAIF4)Mn2+, LiAI5O8)Fe3+, LiAIO2)Fe3+, LiAIO2)Mn2+, LiAI5O8)Mn2+, Li2CaP2O7:Ce3+,Mn2+, LiCeBa4Si4O14)Mn2+, LiCeSrBa3Si4O14)Mn2+, LiInO2)Eu3+, LiInO2)Sm3+, LiLaO2)Eu3+, LuAIO3)Ce3+, (Lu1Gd)2SiO5)Ce3+, Lu2SiO5)Ce3+, Lu2Si2O7)Ce3+, LuTaO4)Nb5+, Lu1-xYxAIO3:Ce3+, MgAI2O4)Mn2+, MgSrAI10O17)Ce1 MgB2O4)Mn2+, MgBa2(PO4J2)Sn2+,
MgBa2(PO4)2:U, MgBaP2O7: Eu2+, MgBaP2O7:Eu2+,Mn2+, MgBa3Si2O8)Eu2+, MgBa(SO4)2:Eu2+, Mg3Ca3(PO4)4:Eu2+, MgCaP2O7:Mn2+, Mg2Ca(SO4)3:Eu2+, Mg2Ca(SO4)3:Eu2+,Mn2 1 MgCeAInO19Tb3+, Mg4(F)GeO6)Mn2+, Mg4(F)(Ge1Sn)O6)Mn2+, MgF2)Mn2+, MgGa2O4)Mn2+, Mg8Ge2OnF2)Mn4+, MgS)Eu2+, MgSiO3)Mn2+, Mg2SiO4)Mn2+, Mg3SiO3F4)Ti4+, MgSO4)Eu2+, MgSO4)Pb2+, MgSrBa2Si2O7)Eu2+, MgSrP2O7)Eu2+, MgSr5(PO4J4)Sn2+, MgSr3Si208:Eu2+,Mn2+, Mg2Sr(SO4)S)Eu2+, Mg2TiO4)Mn4+, MgWO4, MgYBO4)Eu3+, Na3Ce(PO4)2:Tb3+, NaI)TI, Na1.23Ko.42Eu0.12TiSi4O11:Eu3+, Na-i 23Ko 42Eu0 12TiSi5O13-XH2O)Eu3+, Na1 ^K0 46Er0 08TiSi4O11)Eu3+, Na2Mg3AI2Si2O10)Tb, Na(Mg2-xMnx)LiSi4O10F2:Mn, NaYF4)Er3+, Yb3+, NaYO2)Eu3+, P46(70%) + P47 (30%), SrAI12O19)Ce3+, Mn2+, SrAI2O4)Eu2+, SrAI4O7)Eu3+, SrAI12O19)Eu2+, SrAI2S4)Eu2+, Sr2B5O9CI)Eu2+, SrB4O7)Eu2+(F1CI1Br), SrB4O7)Pb2+, SrB4O7)Pb2+, Mn2+, SrB8O13)Sm2+, SrxBayClzAI2O4-z/2: Mn2+, Ce3+, SrBaSiO4)Eu2+, Sr(CI1Br1I)2)Eu2+ in SiO2, SrCI2)Eu2+ in SiO2, Sr5CI(PO4)3:Eu, SrwFxB4O6 5:Eu2+, SrwFxByOz:Eu2+,Sm2+, SrF2)Eu2+, SrGa12O19)Mn2+, SrGa2S4)Ce3+, SrGa2S4)Eu2+, SrGa2S4)Pb2+, SrIn2O4)Pr3+, Al3+, (Sr,Mg)3(PO4)2:Sn, SrMgSi2O6)Eu2+, Sr2MgSi2O7)Eu2+, Sr3MgSi2O8)Eu2+, SrMoO4)U, SrO-3B2O3:Eu2+,CI, ß-SrO-3B2O3:Pb2+, ß- SrO SB2O3 :Pb2+,Mn2+, α-SrO-3B2O3:Sm2+, Sr6P5BO20)Eu, Sr5(PO4)3CI:Eu2+, Sr5(PO4)3CI:Eu2+,Pr3+, Sr5(PO4)3CI:Mn2+, Sr5(PO4)3CI:Sb3+, Sr2P2O7)Eu2+, ß-Sr3(PO4)2:Eu2+, Sr5(PO4)3F:Mn2+, Sr5(PO4)3F:Sb3+, Sr5(PO4)3F:Sb3+,Mn2+, Sr5(PO4)3F:Sn2+, Sr2P2O7)Sn2+, ß- Sr3(PO4)2:Sn2+, ß-Sr3(PO4)2:Sn2+,Mn2+(AI), SrS)Ce3+, SrS)Eu2+, SrS)Mn2+, SrS:Cu+,Na, SrSO4)Bi, SrSO4)Ce3+, SrSO4)Eu2+, SrSO4:Eu2+,Mn2+, Sr5Si4O10CI6)Eu2+, Sr2SiO4)Eu2+, SrTiO3)Pr3+, SrTiO3: Pr3+,AI3+, Sr3WO6)U, SrY2O3)Eu3+, ThO2)Eu3+, ThO2)Pr3+, ThO2)Tb3+, YAI3B4O12: Bi3+, YAI3B4O12Oe3+, YAI3B4O12:Ce3+,Mn, YAI3B4O12:Ce3+,Tb3+, YAI3B4O12:Eu3+, YAI3B4O12:Eu3+,Cr3+, YAI3B4O12:Th4+,Ce3+,Mn2+, YAIO3:Ce3+, Y3AI5O12)Ce3+, (Y1Gd1Lu1Tb)3(AI, Ga)5O12)(Ce1Pr1Sm), Y3AI5O12)Cr3+, YAIO3)Eu3+, Y3AI5O12: Eu3r, Y4AI2O9)Eu3+, Y3AI5O12)Mn4+, YAIO3:Sm3+, YAIO3Tb3+, Y3AI5O12Tb3+, YAsO4:Eu3+, YBO3:Ce3+, YBO3:Eu3+, YF3: Er3+, Yb3+, YF3:Mn2+, YF3)Mn2+Th4+, YF3Tm3+,Yb3+, (Y,Gd)BO3:Eu, (Y1Gd)BO3Tb, (Y,Gd)2O3:Eu3+, Y1 34Gd0 60O3(Eu,Pr), Y2O3:Bi3+, YOBrEu3+, Y2O3)Ce, Y2O3)Er3+, Y2O3)Eu3+(YOE), Y2O3)Ce3+Jb3+, YOCI)Ce3+, YOCI)Eu3+, YOF)Eu3+, YOF)Tb3+, Y2O3)Ho3+, Y2O2S)Eu3+, Y2O2S)Pr3+, Y2O2S)Tb3+,
Y2O3)Tb3+, YPO4:Ce3\ YPO4:Ce3+,Tb3+, YPO4:Eu3+, YPO4:Mn2+,Th4+, YPO4:V5+, Y(P,V)O4:Eu, Y2SiO5)Ce3+, YTaO4, YTaO4)Nb5+, YVO4)Dy3+, YVO4)Eu3+, ZnAI2O4)Mn2+, ZnB2O4)Mn2+, ZnBa2S3)Mn2+, (Zn1Be)2SiO4)Mn2+, Zn0 4Cd06S)Ag, Zn0 6Cd04S)Ag, (Zn1Cd)S)Ag1CI, (Zn1Cd)S)Cu1 ZnF2)Mn2+, ZnGa2O4, ZnGa2O4)Mn2+, ZnGa2S4)Mn2+, Zn2GeO4)Mn2+, (Zn1Mg)F2)Mn2+, ZnMg2(PO4)2:Mn2+, (Zn,Mg)3(PO4)2:Mn2+, ZnO:AI3+,Ga3+, ZnO)Bi3+, ZnO)Ga3+, ZnO)Ga, ZnO-CdO)Ga, ZnO)S, ZnO)Se, ZnO)Zn, ZnS:Ag+,Cr, ZnS)Ag1Cu1CI, ZnS)Ag1Ni, ZnS)Au1In, ZnS-CdS (25-75), ZnS-CdS (50-50), ZnS-CdS (75-25), ZnS-CdS)Ag1Br1Ni, ZnS-CdS:Ag+,CI, ZnS-CdS)Cu1Br, ZnS-CdS)Cu1I1 ZnS)CI", ZnS)Eu2+, ZnS)Cu, ZnS:Cu+,AI3+, ZnS:Cu+,Cr, ZnS)Cu1Sn, ZnS)Eu2+, ZnS)Mn2+, ZnS)Mn1Cu, ZnS)Mn2+Je2+, ZnS)P, ZnS)P3^ 1CI", ZnS)Pb2+, ZnS:Pb2+,CI", ZnS)Pb1Cu, Zn3(PO4)2:Mn2+,BaAl 2 O 4 ) Eu 2+ , BaAl 2 S 4 ) Eu 2+ , BaB 8 O 1-3 ) Eu 2+ , BaF 2 , BaFBrEu 2+ , BaFCLEu 2+ , BaFCLEu 2+ , Pb 2+ , BaGa 2 S 4 ) Ce 3+ , BaGa 2 S 4 ) Eu 2+ , Ba 2 Li 2 Si 2 O 7 ) Eu 2+ , Ba 2 Li 2 Si 2 O 7 ) Sn 2+ , Ba 2 Li 2 Si 2 O 7 ) Sn 2+ , Mn 2+ , BaMgAl 10 Oi 7 ) Ce 3+ , BaMgAl 10 O 17 ) Eu 2+ , BaMgAl 10 O 17 ) Eu 2+ , Mn 2+ , Ba 2 Mg 3 F 10 ) Eu 2+ , BaMg 3 F 8 ) Eu 2+ , Mn 2+ , Ba 2 MgSi 2 O 7 ) Eu 2+ , BaMg 2 Si 2 O 7 ) Eu 2+ , Ba 5 (PO 4 ) 3 Cl: Eu 2+ , Ba 5 (PO 4 ) S CI) U, Ba 3 (PO 4 ) 2 : Eu 2+ , BaS) Au 1 K, BaSO 4 ) Ce 3+ , BaSO 4 ) Eu 2+ , Ba 2 SiO 4 : Ce 3+ , Li + , Mn 2+ , Ba 5 SiO 4 Cl 6 ) Eu 2+ , BaSi 2 O 5 ) Eu 2+ , Ba 2 SiO 4 ) Eu 2+ , BaSi 2 O 5 ) Pb 2+ , Ba x Srii - x F 2 : Eu 2+ , BaSrMgSi 2 O 7 ) Eu 2+ , BaTiP 2 O 7 , (Ba 1 Ti) 2 P 2 O 7 ) Ti, Ba 3 WO 6 ) U, BaY 2 F 8 Er 3+ , Yb + , Be 2 SiO 4 ) Mn 2+ , Bi 4 Ge 3 O 12 , CaAl 2 O 4 ) Ce 3+ , CaLa 4 O 7 ) Ce 3+ , CaAl 2 O 4 ) Eu 2+ , CaAl 2 O 4 ) Mn 2+ , CaAl 4 O 7 ) Pb 2+ , Mn 2+ , CaAl 2 O 4 ) Tb 3+ , Ca 3 Al 2 Si 3 O 12 ) Ce 3+ , Ca 3 Al 2 Si 3 O. i 2 ) Ce 3+ , Ca 3 Al 2 Si 3 O 12 ) Eu 2+ , Ca 2 B 5 O 9 Br) Eu 2+ , Ca 2 B 5 O 9 Cl) Eu 2+ , Ca 2 B 5 O 9 CI) Pb 2+ , CaB 2 O 4 ) Mn 2+ , Ca 2 B 2 O 5 ) Mn 2+ , CaB 2 O 4 ) Pb 2+ , CaB 2 P 2 O 9 ) Eu 2+ , Ca 5 B 2 SiO 10 ) Eu 3+ , Ca 0 . 5 Ba 0 5 Al 12 O 19 : Ce 3+ , Mn 2+ , Ca 2 Ba 3 (PO 4) 3 Cl: Eu 2+ , CaBr 2 ) Eu 2+ in SiO 2 , CaCl 2 ) Eu 2+ in SiO 2 , CaCl 2 : Eu 2+ , Mn 2+ in SiO 2 , CaF 2 ) Ce 3+ , CaF 2 : Ce 3+ , Mn 2+ , CaF 2 ) Ce 3+ Jb 3+ , CaF 2 ) Eu 2+ , CaF 2 ) Mn 2+ , CaF 2 ) U, CaGa 2 O 4 ) Mn 2+ , CaGa 4 O 7 ) Mn 2+ , CaGa 2 S 4 ) Ce 3+ , CaGa 2 S 4 ) Eu 2+ , CaGa 2 S 4 ) Mn 2+ , CaGa 2 S 4 ) Pb 2+ , CaGeO 3 ) Mn 2+ , CaI 2 ) Eu 2+ in SiO 2 , Cal 2 : Eu 2+ , Mn 2+ in SiO 2 , CaLaBO 4 ) Eu 3+ , CaLaB 3 O 7 ) Ce 3+ , Mn 2+ , Ca 2 La 2 BO 6 -SiPb 2+ , Ca 2 MgSi 2 O 7 , Ca 2 MgSi 2 O 7 : Ce 3+ , CaMgSi 2 O 6 ) Eu 2+ , Ca 3 MgSi 2 O 8 IEu 2+ , Ca 2 MgSi 2 O 7 ) Eu 2+ , CaMgSi 2 O 6 : Eu 2+ , Mn 2+ , Ca 2 MgSi 2 O 7 : Eu 2+ , Mn 2+ , CaMoO 4 , CaMoO 4 ) Eu 3+ , CaO) Bi 3+ , CaO) Cd 2+ , CaO) Cu + , CaO) Eu 3+ , CaO) Eu 3+ , Na + , CaO) Mn 2+ , CaO) Pb 2+ , CaO) Sb 3+ , CaO) Sm 3+ , CaO) Tb 3+ , CaO) TI, CaCZn 2+ , Ca 2 P 2 O 7 ) Ce 3+ , α-Ca 3 (PO 4 ) 2 : Ce 3+ , β-Ca 3 (PO 4 ) 2 ) Ce 3+ , Ca 5 (PO 4 ) 3 Cl: Eu 2+ , Ca 5 (PO 4 ) 3 Cl: Mn 2+ , Ca 5 (PO 4 ) 3 Cl: Sb 3+ , Ca 5 (Pθ 4) 3CI: Sn 2+ , β-Ca 3 (PO 4 ) 2 : Eu 2+ , Mn 2+ , Ca 5 (PO 4 ) 3 F: Mn 2+ , Ca s (PO 4 ) 3 F: Sb 3+ , Ca s (PO 4 ) 3 F: Sn 2+ , α-Ca 3 (PO 4 ) 2 : Eu 2+ , β-Ca 3 (PO 4 ) 2 : Eu 2+ , Ca 2 P 2 O 7 ) Eu 2 + , Ca 2 P 2 O 7 : Eu 2+ , Mn 2+ , CaP 2 O 6 ) Mn 2+ , α-Ca 3 (PO 4 ) 2 : Pb 2+ , α-Ca 3 (PO 4 ) 2 : Sn 2+ , β-Ca 3 (PO 4 ) 2 : Sn 2+ , β-Ca 2 P 2 O 7 : Sn, Mn, α-Ca 3 (PO 4 ) 2 : Tr, CaS) Bi 3+ , CaS : Bi 3+ , Na, CaS) Ce 3+ , CaS) Eu 2+ , CaS: Cu + , Na + , CaS) La 3+ , CaS) Mn 2+ , CaSO 4 ) Bi, CaSO 4 ) Ce 3+ , CaSO 4 : Ce 3+ , Mn 2+ , CaSO 4 ) Eu 2+ , CaSO 4 : Eu 2+ , Mn 2+ , CaSO 4 ) Pb 2+ , CaS) Pb 2+ , CaS: Pb 2+ , CI, CaS: Pb 2+ , Mn 2+ , CaS: Pr 3+ , Pb 2+ , CI, CaS) Sb 3+ , CaS: Sb 3+ , Na , CaS) Sm 3+ , CaS) Sn 2+ , CaS: Sn 2+ , F, CaS) Tb 3+ , CaS: Tb 3+ , Cl, CaS) Y 3+ , CaS) Yb 2+ , CaS: Yb 2+ , CI, CaSiO 3 ) Ce 3+ , Ca 3 SiO 4 Cl 2 ) Eu 2+ , Ca 3 SiO 4 Cl 2 ) Pb 2+ , CaSiO 3 ) Eu 2+ , CaSiO 3 : Mn 2+ , Pb, CaSiO 3 ) Pb 2+ , CaSiO 3 : Pb 2+ , Mn 2+ , CaSiO 3 ) Ti 4+ , CaSr 2 (PO 4 ) 2 : Bi 3+ , β- (Ca, Sr) 3 (PO 4 ) 2 : Sn 2+ Mn 2+ , CaTi 0 . 9 Al 0 .iO 3 : Bi 3+ , CaTiO 3 ) Eu 3+ , CaTiO 3 ) Pr 3+ , Ca 5 (VO 4 J 3 Cl, CaWO 4 , CaWO 4 ) Pb 2+ , CaWO 4 ) W, Ca 3 WO 6 ) U, CaYAIO 4 ) Eu 3+ , CaYBO 4 ) Bi 3+ , CaYBO 4 ) Eu 3+ , CaYBo. 8 O 3 . 7 : Eu 3+ , CaY 2 ZrO 6 ) Eu 3+ , (Ca 1 Zn 1 Mg) 3 (PO 4 J 2 ) Sn, CeF 3 , (Ce 1 Mg) BaAInOi 8 ) Ce, (Ce 1 Mg) SrAI 1 I O 18 ) Ce, CeMgAInO 19 ) Ce) Tb, Cd 2 B 6 On) Mn 2+ , CdS: Ag + , Cr, CdS) In, CdS) In, CdS) In 1 Te 1 CdS) Te 1 CdWO 4 , CsF, CsI, CsI) Na + , CsI) TI 1 (ErCl 3 ) o. 25 (BaCl 2) 0 .75, GaN) 1 Zn Gd 3 Ga 5 O 12) Cr 3+, Gd 3 Ga 5 O 12) Cr 1 Ce, GdNbO 4) Bi 3+, Gd 2 O 2 S) Eu 3 + , Gd 2 O 2 Pr 3 *, Gd 2 O 2 S) Pr 1 Ce 1 F 1 Gd 2 O 2 S) Tb 3+ , Gd 2 SiO 5 ) Ce 3+ , KAl 11 O 17 ) Tr, KGa 11 O 17 ) Mn 2+ , K 2 La 2 Ti 3 O 10 ) Eu, KMgF 3 ) Eu 2+ , KMgF 3 ) Mn 2+ , K 2 SiF 6 ) Mn 4+ , LaAl 3 B 4 O 12 ) Eu 3 + , LaAIB 2 O 6 ) Eu 3+ , LaAIO 3 ) Eu 3+ , LaAIO 3 ) Sm 3+ , LaAsO 4 ) Eu 3+ , LaBr 3 ) Ce 3+ , LaBO 3 ) Eu 3+ , (La 1 Ce 1 Tb) PO 4 ) Ce) Tb, LaCl 3 ) Ce 3+ , La 2 O 3 ) Bi 3+ , LaOBrTb 3+ , LaOBrTm 3+ , LaOCl) Bi 3+ , LaOCl) Eu 3+ , LaOF) Eu 3 + , La 2 O 3 ) Eu 3+ , La 2 O 3 ) Pr 3+ , La 2 O 2 S) Tb 3+ , LaPO 4 ) Ce 3+ , LaPO 4 ) Eu 3+ , LaSiO 3 Cl) Ce 3 + , LaSiO 3 Cl) Ce 3+ Jb 3+ , LaVO 4 ) Eu 3+ , La 2 W 3 O 12 ) Eu 3+ , LiAIF 4 ) Mn 2+ , LiAl 5 O 8 ) Fe 3+ , LiAIO 2 ) Fe 3+ , LiAIO 2 ) Mn 2+ , LiAl 5 O 8 ) Mn 2+ , Li 2 CaP 2 O 7 : Ce 3+ , Mn 2+ , LiCeBa 4 Si 4 O 14 ) Mn 2+ , LiCeSrBa 3 Si 4 O 14 ) Mn 2+ , LiInO 2 ) Eu 3+ , LiInO 2 ) Sm 3+ , LiLaO 2 ) Eu 3+ , LuAIO 3 ) Ce 3+ , (Lu 1 Gd) 2 SiO 5 ) Ce 3+ , Lu 2 SiO 5 ) Ce 3+ , Lu 2 Si 2 O 7 ) Ce 3+ , LuTaO 4 ) Nb 5+ , Lu 1 -xY x AIO 3 : Ce 3+ , MgAl 2 O 4 ) Mn 2+ , MgSrAl 10 O 17 ) Ce 1 MgB 2 O 4 ) Mn 2+ , MgBa 2 (PO 4 J 2 ) Sn 2+ , MgBa 2 (PO 4 ) 2: U, MgBaP 2 O 7 : Eu 2+ , MgBaP 2 O 7 : Eu 2+ , Mn 2+ , MgBa 3 Si 2 O 8 ) Eu 2+ , MgBa (SO 4 ) 2 : Eu 2+ , Mg 3 Ca 3 (PO 4 ) 4 : Eu 2+ , MgCaP 2 O 7 : Mn 2+ , Mg 2 Ca (SO 4 ) 3 : Eu 2+ , Mg 2 Ca (SO 4 ) 3 : Eu 2 +, Mn 2 1 MgCeAI n O 19 Tb 3+, Mg 4 (F) GeO 6) Mn 2+, Mg 4 (F) (Ge 1 Sn) O 6) Mn 2+, MgF 2) Mn 2+, MgGa 2 O 4 ) Mn 2+ , Mg 8 Ge 2 OnF 2 ) Mn 4+ , MgS) Eu 2+ , MgSiO 3 ) Mn 2+ , Mg 2 SiO 4 ) Mn 2+ , Mg 3 SiO 3 F 4 ) Ti 4 + , MgSO 4 ) Eu 2+ , MgSO 4 ) Pb 2+ , MgSrBa 2 Si 2 O 7 ) Eu 2+ , MgSrP 2 O 7 ) Eu 2+ , MgSr 5 (PO 4 J 4 ) Sn 2+ , MgSr 3 Si 2 O 8 : Eu 2+ , Mn 2+ , Mg 2 Sr (SO 4 ) S ) Eu 2+ , Mg 2 TiO 4 ) Mn 4+ , MgWO 4 , MgYBO 4 ) Eu 3+ , Na 3 Ce (PO 4 ) 2 : Tb 3+ , NaI) TI, Na 1 . 23 Ko. 42 Eu 0 . 12 TiSi 4 O 11 : Eu 3+ , Na-i 23 Ko 42 Eu 0 12 TiSi 5 O 13 -XH 2 O) Eu 3+ , Na 1 K 0 46 Er 0 08 TiSi 4 O 11 ) Eu 3+ , Na 2 Mg 3 Al 2 Si 2 O 10 ) Tb, Na (Mg 2-x Mn x ) LiSi 4 O 10 F 2 : Mn, NaYF 4 ) He 3+ , Yb 3+ , NaYO 2 ) Eu 3+ , P46 (70%) + P47 (30%), SrAl 12 O 19 ) Ce 3+ , Mn 2+ , SrAl 2 O 4 ) Eu 2+ , SrAl 4 O 7 ) Eu 3+ , SrAl 12 O 19 ) Eu 2+ , SrAl 2 S 4 ) Eu 2+ , Sr 2 B 5 O 9 Cl) Eu 2+ , SrB 4 O 7 ) Eu 2+ (F 1 Cl 1 Br), SrB 4 O 7 ) Pb 2+ , SrB 4 O. 7 ) Pb 2+ , Mn 2+ , SrB 8 O 13 ) Sm 2+ , Sr x Ba y Cl z Al 2 O 4-z / 2 : Mn 2+ , Ce 3+ , SrBaSiO 4 ) Eu 2+ , Sr (CI 1 Br 1 I) 2 ) Eu 2+ in SiO 2 , SrCl 2 ) Eu 2+ in SiO 2 , Sr 5 Cl (PO 4 ) 3 : Eu, Sr w F x B 4 O 6 5 : Eu 2+ , Sr w F x B y O z : Eu 2+ , Sm 2+ , SrF 2 ) Eu 2+ , SrGa 12 O 19 ) Mn 2+ , SrGa 2 S 4 ) Ce 3+ , SrGa 2 S 4 ) Eu 2 + , SrGa 2 S 4 ) Pb 2+ , SrIn 2 O 4 ) Pr 3+ , Al 3+ , (Sr, Mg) 3 (PO 4 ) 2 : Sn, SrMgSi 2 O 6 ) Eu 2+ , Sr 2 MgSi 2 O 7 ) Eu 2+ , Sr 3 MgSi 2 O 8 ) Eu 2+ , SrMoO 4 ) U, SrO 3B 2 O 3 : Eu 2+ , Cl, β-SrO-3B 2 O 3 : Pb 2+ , β-SrO SB 2 O 3 : Pb 2+ , Mn 2+ , α-SrO-3B 2 O 3 : Sm 2+ , Sr 6 P 5 BO 20 ) Eu, Sr 5 (PO 4 ) 3 Cl: Eu 2+ , Sr 5 (PO 4 ) 3 Cl: Eu 2+ , Pr 3+ , Sr 5 (PO 4 ) 3 Cl: Mn 2+ , Sr 5 (PO 4 ) 3 Cl: Sb 3+ , Sr 2 P 2 O 7 ) Eu 2+ , β-Sr 3 (PO 4 ) 2 : Eu 2+ , Sr 5 (PO 4 ) 3 F: Mn 2+ , Sr 5 (PO 4 ) 3 F: Sb 3+ , Sr 5 (PO 4 ) 3 F: Sb 3+ , Mn 2+ , Sr 5 (PO 4) 3 F: Sn 2+, Sr 2 P 2 O 7) Sn 2+, .beta. Sr 3 (PO 4) 2: Sn 2+, ß-Sr 3 (PO 4) 2: Sn 2+ , Mn 2+ (Al), SrS) Ce 3+ , SrS) Eu 2+ , SrS) Mn 2+ , SrS: Cu + , Na, SrSO 4 ) Bi, SrSO 4 ) Ce 3+ , SrSO 4 ) Eu 2 + , SrSO 4 : Eu 2+ , Mn 2+ , Sr 5 Si 4 O 10 Cl 6 ) Eu 2+ , Sr 2 SiO 4 ) Eu 2+ , SrTiO 3 ) Pr 3+ , SrTiO 3 : Pr 3+ , Al 3+ , Sr 3 WO 6 ) U, SrY 2 O 3 ) Eu 3+ , ThO 2 ) Eu 3+ , ThO 2 ) Pr 3+ , ThO 2 ) Tb 3+ , YAI 3 B 4 O 12 : Bi 3+ , YAl 3 B 4 O 12 Oe 3+ , YAl 3 B 4 O 12 : Ce 3+ , Mn, YAl 3 B 4 O 12 : Ce 3+ , Tb 3+ , YAl 3 B 4 O 12 : Eu 3+ , YAl 3 B 4 O 12 : Eu 3+ , Cr 3+ , YAl 3 B 4 O 12 : Th 4+ , Ce 3+ , Mn 2+ , YAIO 3 : Ce 3+ , Y 3 Al 5 O 12 ) Ce 3 + , (Y 1 Gd 1 Lu 1 Tb) 3 (Al, Ga) 5 O 12 ) (Ce 1 Pr 1 Sm), Y 3 Al 5 O 12 ) Cr 3+ , YAIO 3 ) Eu 3+ , Y 3 Al 5 O 12 : Eu 3r , Y 4 Al 2 O 9 ) Eu 3+ , Y 3 Al 5 O 12 ) Mn 4+ , YAIO 3 : Sm 3+ , YAIO 3 Tb 3+ , Y 3 Al 5 O 12 Tb 3+ , YAsO 4 : Eu 3+ , YBO 3 : Ce 3+ , YBO 3 : Eu 3+ , YF 3 : Er 3+ , Yb 3+ , YF 3 Mn 2+ , YF 3 ) Mn 2+ Th 4+ , YF 3 Tm 3+ , Yb 3+ , (Y, Gd) BO 3 : Eu, (Y 1 Gd) BO 3 Tb, (Y, Gd) 2 O. 3 : Eu 3+ , Y 1 34 Gd 0 60 O 3 (Eu, Pr), Y 2 O 3 : Bi 3+ , YOBrEu 3+ , Y 2 O 3 ) Ce, Y 2 O 3 ) Er 3+ , Y 2 O 3 ) Eu 3+ (YOE), Y 2 O 3 ) Ce 3+ Jb 3+ , YOCl) Ce 3+ , YOCl) Eu 3+ , YOF) Eu 3+ , YOF) Tb 3+ , Y 2 O. 3 ) Ho 3+ , Y 2 O 2 S) Eu 3+ , Y 2 O 2 S) Pr 3+ , Y 2 O 2 S) Tb 3+ , Y 2 O 3 ) Tb 3+ , YPO 4 : Ce 3 \ YPO 4 : Ce 3+ , Tb 3+ , YPO 4 : Eu 3+ , YPO 4 : Mn 2+ , Th 4+ , YPO 4 : V 5+ , Y (P, V) O 4 : Eu, Y 2 SiO 5 ) Ce 3+ , YTaO 4 , YTaO 4 ) Nb 5+ , YVO 4 ) Dy 3+ , YVO 4 ) Eu 3+ , ZnAl 2 O 4 ) Mn 2+ , ZnB 2 O 4 ) Mn 2+ , ZnBa 2 S 3 ) Mn 2+ , (Zn 1 Be) 2 SiO 4 ) Mn 2+ , Zn 0 4 Cd 06 S) Ag, Zn 0 6 Cd 04 S ) Ag, (Zn 1 Cd) S) Ag 1 Cl, (Zn 1 Cd) S) Cu 1 ZnF 2 ) Mn 2+ , ZnGa 2 O 4 , ZnGa 2 O 4 ) Mn 2+ , ZnGa 2 S 4 ) Mn 2+ , Zn 2 GeO 4 ) Mn 2+ , (Zn 1 Mg) F 2 ) Mn 2+ , ZnMg 2 (PO 4 ) 2 : Mn 2+ , (Zn, Mg) 3 (PO 4 ) 2 : Mn 2 + , ZnO: Al 3+ , Ga 3+ , ZnO) Bi 3+ , ZnO) Ga 3+ , ZnO) Ga, ZnO-CdO) Ga, ZnO) S, ZnO) Se, ZnO) Zn, ZnS: Ag + , Cr, ZnS) Ag 1 Cu 1 Cl, ZnS) Ag 1 Ni, ZnS) Au 1 In, ZnS-CdS (25-75), ZnS-CdS (50-50), ZnS-CdS (75-25), ZnS-CdS) Ag 1 Br 1 Ni, ZnS-CdS: Ag + , Cl, ZnS-CdS) Cu 1 Br, ZnS-CdS) Cu 1 I 1 ZnS) Cl " , ZnS) Eu 2+ , ZnS) Cu, ZnS: Cu + , Al 3+ , ZnS: Cu + , Cr, ZnS) Cu 1 Sn, ZnS) Eu 2+ , ZnS) Mn 2+ , ZnS) Mn 1 Cu, ZnS) Mn 2+ Each 2+ , ZnS ) P, ZnS) P 3 ^ 1 Cl " , ZnS) Pb 2+ , ZnS: Pb 2+ , Cl " , ZnS) Pb 1 Cu, Zn 3 (PO 4 ) 2 : Mn 2+ ,
Zn2SiO4)Mn2+, Zn2SiO4:Mn2+,As5+, Zn2SiO4)Mn1Sb2O2, Zn2SiO4:Mn2+,P,Zn 2 SiO 4 ) Mn 2+ , Zn 2 SiO 4 : Mn 2+ , As 5+ , Zn 2 SiO 4 ) Mn 1 Sb 2 O 2 , Zn 2 SiO 4 : Mn 2+ , P,
Zn2SiO4)T Tir44+, ZnS)Sn -2+ ZnS)Sn1Ag, ZnS:Sn2+,Li+, ZnS)Te1Mn1 ZnS- ZnTe)Mn2+, ZnSe:Cu+,CI, ZnWO4 Zn 2 SiO 4 ) T Tir 4 4+, ZnS) Sn -2+ ZnS) Sn 1 Ag, ZnS: Sn 2+ , Li + , ZnS) Te 1 Mn 1 ZnS-ZnTe) Mn 2+ , ZnSe: Cu + , CI, ZnWO 4
Vorzugsweise besteht der Leuchtstoffkörper aus mindestens einem der folgenden Leuchtstoffmaterialien:Preferably, the phosphor body consists of at least one of the following phosphor materials:
(Y1 Gd, Lu, Sc, Sm, Tb)3 (Al1 Ga)5Oi2)Ce (mit oder ohne Pr)1 (Ca1 Sr, Ba)2SiO4)Eu, YSiO2N)Ce, Y2Si3O3N4)Ce, Gd2Si3O3N4)Ce, (Y1GdJb1Lu)3AI5- xSixOi2-xNx:Ce, BaMgAI10Oi7)Eu, SrAI2O4)Eu, Sr4AIi4O25)Eu, (Ca1Sr1Ba)Si2N2O2)Eu, SrSiAI2O3N2)Eu, (Ca1Sr1Ba)2Si5N8)Eu, CaAISiN3)Eu1 Molybdate, Wolframate, Vanadate, Gruppe-Ill Nitride, Oxide, jeweils einzeln oder Gemischen derselben mit einem oder mehreren Aktivatorionen wie Ce, Eu, Mn, Cr und/oder Bi.(Y 1 Gd, Lu, Sc, Sm, Tb) 3 (Al 1 Ga) 5 Oi 2 ) Ce (with or without Pr) 1 (Ca 1 Sr, Ba) 2 SiO 4 ) Eu, YSiO 2 N) Ce, Y 2 Si 3 O 3 N 4) Ce, Gd 2 Si 3 O 3 N 4) Ce, (Y 1 GdJb 1 Lu) 3 Al 5-x Si x Oi 2-x N x: Ce, BaMgAI 10 Oi 7) Eu, SrAl 2 O 4 ) Eu, Sr 4 Ali 4 O 25 ) Eu, (Ca 1 Sr 1 Ba) Si 2 N 2 O 2 ) Eu, SrSiAl 2 O 3 N 2 ) Eu, (Ca 1 Sr 1 Ba) 2 Si 5 N 8 ) Eu, CaAISiN 3 ) Eu 1 Molybdate, tungstates, vanadates, Group III nitrides, oxides, individually or mixtures thereof with one or more activator ions such as Ce, Eu, Mn, Cr and / or Bi.
Die Herstellung der eingesetzten Leuchtstoffmaterialien erfolgt nach herkömmlichen mixing and firing-Methoden oder vorzugsweise nach nasschemischen Methoden. Die nasschemische Herstellung besitzt generell den Vorteil, dass die resultierenden Materialien eine höhere Einheitlichkeit in Bezug auf die stöchiometrische Zusammensetzung, die Partikelgröße und die Morphologie der Partikel aufweisen.
Für die nasschemische Vorbehandlung einer wässrigen Vorstufe der Leuchtstoffe (Leuchtstoffprecursoren) bestehend z.B. aus einem Gemisch von Yttriumnitrat-, Aluminiumnitrat-, Cernitrat- und Gadoliniumnitratlösung sind folgende bekannte Methoden bevorzugt:The preparation of the phosphor materials used is carried out by conventional mixing and firing methods or preferably by wet-chemical methods. The wet-chemical preparation generally has the advantage that the resulting materials have a higher uniformity with respect to the stoichiometric composition, the particle size and the morphology of the particles. For the wet-chemical pretreatment of an aqueous precursor of the phosphors (phosphor precursors) consisting, for example, of a mixture of yttrium nitrate, aluminum nitrate, cerium nitrate and gadolinium nitrate solution, the following known methods are preferred:
• Cofällung mit einer NH4HCO3-Lösung {siehe z.B. Jander, Blasius Lehrbuch der analyt. u. präp. anorg. Chem. 2002)Co-precipitation with a NH 4 HCO 3 solution {see, for example, Jander, Blasius Lehrbuch der analyt. u. prep. anorg. Chem. 2002)
• Pecchini-Verfahren mit einer Lösung aus Zitronensäure und Ethylenglykol (siehe z.B. Annual Review of Materials Research Vol. 36: 2006, 281-331)Pecchini method with a solution of citric acid and ethylene glycol (see, e.g., Annual Review of Materials Research Vol. 36: 2006, 281-331)
• Combustion-Verfahren unter Verwendung von Harnstoff• Combustion process using urea
• Sprühtrocknung wässriger oder organischer Salzlösungen (Edukte)Spray drying of aqueous or organic salt solutions (educts)
• Sprühpyrolyse (auch Spraypyrolyse genannt) wässriger oder organischer Salzlösungen (Edukte)• spray pyrolysis (also called spray pyrolysis) of aqueous or organic salt solutions (educts)
• Eindampfen von Nitratlösungen und thermischer Umsetzung des Rückstandes• Evaporation of nitrate solutions and thermal reaction of the residue
Bei der o.g. Cofällung werden z.B. Nitratlösungen der entsprechenden Leuchtstoffedukte mit einer NH4HCO3-Lösung versetzt, wodurch sich der Leuchtstoffprecursor bildet.In the above-mentioned co-precipitation, for example, nitrate solutions of the corresponding phosphorus are mixed with an NH 4 HCO 3 solution, whereby the phosphor precursor is formed.
Beim Pecchini-Verfahren werden z.B. die o.g. Nitratlösungen der entsprechenden Leuchtstoffedukte bei Raumtemperatur mit einem Fällungsreagenz bestehend aus Zitronensäure und Ethylenglykol versetzt und anschließend erhitzt. Durch Erhöhung der Viskosität kommt es zur Leuchtstoffprecursor-Bildung.In the pecchini method, e.g. the o.g. Nitrate solutions of the corresponding Leuchtstoffedukte at room temperature with a precipitating agent consisting of citric acid and ethylene glycol added and then heated. Increasing the viscosity causes phosphor precursor formation.
Beim bekannten Combustion-Verfahren werden z.B. die o.g. Nitratlösungen der entsprechenden Leuchtstoffedukte in Wasser gelöst, dann unter Rückfluss gekocht und mit Harnstoff versetzt, wodurch sich der Leuchtstoffprecursor langsam bildet.
Die Sprühpyrolyse gehört zu den Aerosolverfahren, die durch Versprühen von Lösungen, Suspensionen oder Dispersionen in einen durch unterschiedliche Art und Weise erhitzten Reaktionsraum (Reaktor) sowie die Bildung und Abscheidung von Feststoff- Partikeln gekennzeichnet sind. Im Gegensatz zur Sprühtrocknung mit Heißgastemperaturen < 2000C finden bei der Sprühpyrolyse als Hochtemperatur- Prozess außer der Verdampfung des Lösungsmittels zusätzlich die thermische Zersetzung der verwendeten Edukte (z. B. Salze) sowie die Neubildung von Stoffen (z. B. Oxide, Mischoxide) statt.In the known combustion method, for example, the abovementioned nitrate solutions of the corresponding phosphorus starting materials are dissolved in water, then boiled under reflux and admixed with urea, whereby the phosphor precursor slowly forms. Spray pyrolysis belongs to the aerosol processes which are characterized by spraying solutions, suspensions or dispersions into a reaction chamber (reactor) which has been heated in different ways, as well as the formation and separation of solid particles. In contrast to the spray-drying with hot gas temperatures <200 0 C in addition be found in the spray pyrolysis as a high-temperature process in addition to the evaporation of the solvent, the thermal decomposition of the starting materials (eg., Salts) used as well as the formation of new materials (eg., Oxides, mixed oxides ) instead of.
Die o.g. 6 Verfahrensvarianten sind ausführlich in der DE 102006027133.5 (Merck) beschrieben, die voll umfänglich in den Kontext der vorliegenden Anmeldung durch Bezugnahme eingefügt wird.The o.g. Process variants are described in detail in DE 102006027133.5 (Merck), which is incorporated by reference in its entirety into the context of the present application.
Die nach den o.g. Methoden hergestellten Leuchtstoffprecursoren (z. B. amorphes oder teilkristallines oder kristallines YAG mit Cer dotiert), bestehen aus sub-μm großen Partikeln, weil sie dadurch eine sehr hohe Oberflächenenergie besitzen und über eine sehr große Sinteraktivität verfügen.The after the o.g. Phosphorus precursors (eg, amorphous or semi-crystalline or crystalline YAG doped with cerium) consist of sub-micron sized particles because of their very high surface energy and very high sintering activity.
Anschließend werden die Leuchtstoffprecursoren einer ein- oder mehrstufigen thermischen Nachbehandlung zum fertigen Leuchtstoffpulver unterzogen, was unter reduzierender oder oxidierender Reaktionsgasatmosphäre, an der Luft oder im Vakuum geschehen kann.Subsequently, the phosphor precursors are subjected to a single or multi-stage thermal aftertreatment to the finished phosphor powder, which can be done under reducing or oxidizing reaction gas atmosphere, in air or in vacuo.
Ein weiterer Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterbauelementes bestehend aus folgenden Verfahrensschritten:A further subject of the present invention is a method for producing a light-emitting semiconductor component comprising the following method steps:
• Aufbau eines schichtförmigen Halbleiterkörpers (1) in einem lichtabstrahlenden Halbleiterbauelement enthaltend anorganische lichtemittierende Schichten nach herkömmlichen Methoden wie Gasphasenepitaxie, PVD1 CVD, MOCVD, MBE (molecular beam epitaxy), LPE (liquid phase epitaxy) oder bei Einsatz von organischen
- -Composition of a layer-shaped semiconductor body (1) in a light-emitting semiconductor component containing inorganic light-emitting layers by conventional methods such as gas phase epitaxy, PVD 1 CVD, MOCVD, MBE (molecular beam epitaxy), LPE (liquid phase epitaxy) or when using organic - -
lichtemittierenden Schichten nach herkömmlichen Methoden wie Aufdampfprozessen, spin coating oder inkjet printing.light-emitting layers by conventional methods such as vapor deposition, spin coating or inkjet printing.
• anschließende Strukturierung der Oberfläche des Halbleiterkörpers (1) enthaltend Hohlzylinder mit parallelen Längsachsen über lithografische (Nano-Imprint-Technologie) und/oder Ätzverfahren, Elektronenstrahltechnik, reaktive lonenstrahlentechnologie, holografische TechnologienSubsequent structuring of the surface of the semiconductor body (1) comprising hollow cylinders with parallel longitudinal axes via lithographic (nanoimprint technology) and / or etching processes, electron beam technology, reactive ion beam technology, holographic technologies
• Beschichten der Oberfläche des Halbleiterkörpers (1) mit Konversionsmaterialien oder Konversionsprecursoren mit anschließender thermischer Behandlung.Coating the surface of the semiconductor body (1) with conversion materials or conversion precursors with subsequent thermal treatment.
• Anbringen von elektrischen Kontakten an den Halbleiterkörper (1) nach herkömmlichen Methoden wie Aufbringen von Edelmetallen wie Silber oder Gold.• Attaching electrical contacts to the semiconductor body (1) by conventional methods such as deposition of precious metals such as silver or gold.
• Anlöten von Drähten zur Bestromung.• Soldering of wires for energization.
• Verkapselung mit Silikon- oder Epoxyharz und ggf. Anbringung von Sekundäroptiken.• Encapsulation with silicone or epoxy resin and, if necessary, attachment of secondary optics.
In einer bevorzugten Ausführungsform des erfindungsgemäßen Halbleiterbauelementes handelt es sich bei der Lichtquelle um ein lumineszentes IndiumAluminiumGalliumNitrid, insbesondere der Formel IniGajAlkN, wobei 0 < i, 0 < j, 0 < k, und i+j+k=1 ist.In a preferred embodiment of the semiconductor device according to the invention, the light source is a luminescent indium-aluminum gallium nitride, in particular of the formula IniGa j Al k N, where 0 <i, 0 <j, 0 <k, and i + j + k = 1.
In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Halbleiterbauelementes handelt es sich bei der Lichtquelle um eine lumineszente auf ZnO, TCO (Transparent conducting oxide), ZnSe oder SiC basierende Anordnung oder auch um eine auf einer organischen lichtemittierenden Schicht basierende Anordnung.In a further preferred embodiment of the semiconductor component according to the invention, the light source is a luminescent arrangement based on ZnO, TCO (transparent conducting oxide), ZnSe or SiC or else an arrangement based on an organic light-emitting layer.
In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Halbleiterbauelementes handelt es sich bei der Lichtquelle um eine über elektrische Wechselfelder aktivierte elektrolumineszente Anordnung
(„Elektrolumineszenzelement"), z. B. sog. Elektrolumineszenzfolien aus beispielsweise ZnS oder dotiertem ZnS.In a further preferred embodiment of the semiconductor component according to the invention, the light source is an electroluminescent arrangement that is activated by alternating electric fields ("Electroluminescent element"), for example so-called electroluminescent films of, for example, ZnS or doped ZnS.
Weiterhin bevorzugt ist es, wenn das Halbleiterbauelement einen Halbleiterkörper enthält, dessen ausgesandte Strahlung im nahen UV- liegenden Spektralbereich bei einer Wellenlänge λ zwischen 360 nm und 400nm ein Lumineszenz-Intensitätsmaximum aufweist.It is further preferred if the semiconductor component contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the near UV spectral range at a wavelength λ between 360 nm and 400 nm.
In einer weiteren Ausführungsform enthält das Halbleiterbauelement bevorzugt einen Halbleiterkörper, dessen ausgesandte Strahlung im blauen Spektralbereich bei einer Wellenlänge λ zwischen 420 und 470 nm ein Lumineszenz-Intensitätsmaximum aufweist.In a further embodiment, the semiconductor component preferably contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the blue spectral range at a wavelength λ between 420 and 470 nm.
In einer weiteren Ausführungsform enthält das Halbleiterbauelement bevorzugt einen Halbleiterkörper, dessen ausgesandte Strahlung im grünen Spektralbereich bei einer Wellenlänge λ zwischen 510 und 550 nm ein Lumineszenz-Intensitätsmaximum aufweist.In a further embodiment, the semiconductor component preferably contains a semiconductor body whose emitted radiation has a luminescence intensity maximum in the green spectral range at a wavelength λ between 510 and 550 nm.
Im folgenden soll die Erfindung anhand mehrerer Ausführungsbeispiele in Verbindung mit den Abbildungen 1 bis 6 näher erläutert werden. Sie sind jedoch keinefalls als limitierend zu betrachten. Es zeigen:In the following the invention with reference to several embodiments in conjunction with Figures 1 to 6 will be explained in more detail. However, they are not to be considered as limiting. Show it:
Abb. 1: Schematische Schnittdarstellung eines Halbleiterkörpers, wobei die Schichtenfolge nicht vollständig skizziert ist. A= mit Konversionsmaterialien befüllte Hohlzylinder, B = Dicke der Schicht, welche über die strukturierte Oberfläche verfügt, C = strukturierte Oberfläche (p-GaN), D = lichtemittierende Schicht oder Grenzfläche, in der im Falle von LEDs die Ladungsträgerrekombination und Emission von Photonen stattfindet.Fig. 1: Schematic sectional view of a semiconductor body, wherein the layer sequence is not completely sketched. A = hollow cylinders filled with conversion materials, B = thickness of the layer which has the structured surface, C = structured surface (p-GaN), D = light-emitting layer or interface in which charge carrier recombination and emission of photons occurs in the case of LEDs ,
Abb.2: Schematische Schnittdarstellung der Füllung der strukturierten Oberfläche eines Halbleiterkörpers mit Konversionsleuchtstoff auf zwei
verschiedene Arten: bei der ersten Alternative (E) sind ausschließlich die Hohlräume mit Konversionsleuchtstoffen befüllt, während bei der zweiten Alternative (F) zusätzlich noch die gesamte Oberfläche mit Konversionsleuchtstoff beschichtet ist.Fig.2: Schematic sectional view of the filling of the structured surface of a semiconductor body with conversion luminescent material on two different types: in the first alternative (E) only the cavities are filled with conversion phosphors, while in the second alternative (F) additionally the entire surface is coated with conversion phosphor.
Abb. 3: Abmessungen der nach oben offenen Hohlzylinder: G = Zylinderdurchmesser: 200 nm - 10 μm,Fig. 3: Dimensions of the upwardly open hollow cylinder: G = cylinder diameter: 200 nm - 10 μm,
H = Dicke der Schicht, welche die strukturierte Oberfläche enthält: 100 nm - 3 μm, J = Tiefe der Hohlzylinder: 10 % - 95 % von H , K = Mittelpunktsabstand der Hohlzylinderbasis: 300 nm - 20 μmH = thickness of the layer containing the structured surface: 100 nm - 3 μm, J = depth of the hollow cylinder: 10% - 95% of H, K = center distance of the hollow cylinder base: 300 nm - 20 μm
Abb. 4: Schematische Schnittdarstellung der Anordnung der Hohlzylinder photonisch kristallin (linke Anordnung) und photonisch quasikristallin (rechte Anordnung)Fig. 4: Schematic sectional view of the arrangement of the hollow cylinders photonically crystalline (left-hand arrangement) and photonic quasicrystalline (right-hand arrangement)
Abb. 5: Schematische Schnittdarstellung eines Ausführungsbeispiels eines erfindungsgemäßen Halbleiterbauelementes mit Leuchtstoff lediglich in den Hohlzylindern (normales LED-Design mit Kontaktdraht auf LED-Oberseite aufgelötet) 1 = Halbleiterkörper; 2, 3 = elekt. Anschlüsse; 4 = strukturierte Oberfläche mit Hohlzylindern, die mit Leuchtstoff befüllt sind; 5 = Bonddraht; 6 = transparente UmhüllungFig. 5: Schematic sectional view of an embodiment of a semiconductor device according to the invention with phosphor only in the hollow cylinders (normal LED design soldered with contact wire on LED top) 1 = semiconductor body; 2, 3 = elekt. Connections; 4 = structured surface with hollow cylinders filled with phosphor; 5 = bonding wire; 6 = transparent envelope
Abb.6: Schematische Schnittdarstellung eines Ausführungsbeispiels eines erfindungsgemäßen Halbleiterbauelementes im Flip-Chip-Design (ohne Kontaktdraht auf LED-Oberfläche) mit Konversionsleuchtstoff (Pulver in Harz-Dispersion oder keramische Beschichtung) in Hohlzylindern, 1 = Halbleiterkörper; 2, 3 = elekt. Anschlüsse; 4 = strukturierte Oberfläche mit Hohlzylindern, in denen sich Leuchtstoff befindet; 5 = Kontaktpunkt; 6 = transparente Umhüllung)Fig.6: Schematic sectional view of an embodiment of a semiconductor device according to the invention in flip-chip design (without contact wire on LED surface) with conversion luminescent material (powder in resin dispersion or ceramic coating) in hollow cylinders, 1 = semiconductor body; 2, 3 = elekt. Connections; 4 = structured surface with hollow cylinders in which phosphor is located; 5 = contact point; 6 = transparent cladding)
Abb.7: Schematische Schnittdarstellung eines Ausführungsbeispiels eines erfindungsgemäßen Halbleiterbauelementes im Flip-Chip-Design (ohne
Kontaktdraht auf LED-Oberfläche) mit Konversionsleuchtstoff (Pulver in Harz-Dispersion oder keramische Beschichtung) in Hohlzylindern und über die gesamte Oberfläche, 1 = Halbleiterkörper; 2, 3 = elekt. Anschlüsse; 4 = strukturierte Oberfläche mit Hohlzylindern, in denen sich Leuchtstoff befindet; 5 = Kontaktpunkt; 6 = transparente Umhüllung)Fig.7: Schematic sectional view of an embodiment of a semiconductor device according to the invention in flip-chip design (without Contact wire on LED surface) with conversion phosphor (powder in resin dispersion or ceramic coating) in hollow cylinders and over the entire surface, 1 = semiconductor body; 2, 3 = elekt. Connections; 4 = structured surface with hollow cylinders in which phosphor is located; 5 = contact point; 6 = transparent cladding)
Abb. 8: Schematische Schnittdarstellung eines Ausführungsbeispiels eines erfindungsgemäßen Halbleiterbauelementes mit Leuchtstoff in den Hohlzylindern und über die gesamte Oberfläche (normales LED-Design mit Kontaktdraht auf LED-Oberseite aufgelötet) 1 = Halbleiterkörper; 2, 3 = elekt. Anschlüsse; 4 = strukturierte Oberfläche mit Hohlzylindern, die mit Leuchtstoff befüllt sind; 5 = Bonddraht; 6 = transparente UmhüllungFig. 8: Schematic sectional view of an embodiment of a semiconductor device according to the invention with phosphor in the hollow cylinders and over the entire surface (normal LED design with contact wire on LED top side soldered) 1 = semiconductor body; 2, 3 = elekt. Connections; 4 = structured surface with hollow cylinders filled with phosphor; 5 = bonding wire; 6 = transparent envelope
In den verschiedenen Abbildungen sind gleiche bzw. gleichwirkende Teile immer mit denselben Bezugszeichen bezeichnet.In the various figures, the same or equivalent parts are always denoted by the same reference numerals.
Bei dem in Abb. 5 dargestellten Ausführungsbeispiel handelt es sich um ein Halbleiterbauelement mit normalem LED-Design, wobei sich der Konversionsleuchtstoff (mit einer Harzdispersion) lediglich in den Hohlzylindern des Halbleiterkörpers (1) befindet. Der Halbleiterkörper (1) und Teilbereiche der elektrischen Anschlüsse (2, 3) sind von einer weiteren transparenten Umhüllung (6) umschlossen, die keine Wellenlängenänderung der durch die Leuchtstoff-enthaltende, strukturierte Oberfläche (4) hindurchgetretene Strahlung bewirkt und beispielweise aus einem in der LED-Technik verwendbaren transparenten Epoxidharz oder aus einem anderen geeigneten strahlungsdurchlässigen Material wie z.B. Glas gefertigt ist. Über einen Bonddraht (5) ist die Oberfläche des Halbleiterkörpers (1) mit einem zweiten elektrischen Anschluss (3) verbunden.In the embodiment shown in Fig. 5 is a semiconductor device with a normal LED design, wherein the conversion luminescent material (with a resin dispersion) is only in the hollow cylinders of the semiconductor body (1). The semiconductor body (1) and subregions of the electrical connections (2, 3) are enclosed by a further transparent cladding (6) which effects no change in wavelength of the radiation passing through the phosphor-containing structured surface (4) and, for example, from one in the LED technology usable transparent epoxy or other suitable radiation-transparent material such as Glass is made. Via a bonding wire (5), the surface of the semiconductor body (1) with a second electrical connection (3) is connected.
Bei dem in Abb. 6 dargestellten Ausführungsbeispiel handelt es um ein Halbleiterbauelement im Flip-Chip-Design (ohne Kontaktdraht auf der LED-
- i -The exemplary embodiment illustrated in FIG. 6 is a semiconductor component in flip-chip design (without contact wire on the LED). - i -
Oberfläche), wobei sich das Leuchtstoffpulver (ohne Harzdispersion) lediglich in den Hohlzylindern der strukturierten Oberfläche (4) befindet. Der Halbleiterkörper (1) und Teilbereiche der elektrischen Anschlüsse (2, 3) sind von einer weiteren transparenten Umhüllung (6) umschlossen, die keine Wellenlängenänderung der durch die Leuchtstoff-enthaltende, strukturierte Oberfläche (4) hindurchgetretene Strahlung bewirkt.Surface), wherein the phosphor powder (without resin dispersion) is only in the hollow cylinders of the structured surface (4). The semiconductor body (1) and subregions of the electrical connections (2, 3) are enclosed by a further transparent cladding (6) which does not cause any change in wavelength of the radiation passing through the phosphor-containing, structured surface (4).
Bei dem in Abb. 7 dargestellten Ausführungsbeispiel handelt es um ein Halbleiterbauelement im Flip-Chip-Design (ohne Kontaktdraht auf der LED- Oberfläche), wobei sich das Leuchtstoffpulver (ohne Harzdispersion) in den Hohlzylindern und auf der Oberfläche (4) befindet. Der Halbleiterkörper (1) und Teilbereiche der elektrischen Anschlüsse (2, 3) sind von einer weiteren transparenten Umhüllung (6) umschlossen, die keine Wellenlängenänderung der durch die Leuchtstoff-enthaltende, strukturierte Oberfläche (4) hindurchgetretene Strahlung bewirkt.In the embodiment shown in Fig. 7 is a semiconductor device in the flip-chip design (without contact wire on the LED surface), wherein the phosphor powder (without resin dispersion) is in the hollow cylinders and on the surface (4). The semiconductor body (1) and subregions of the electrical connections (2, 3) are enclosed by a further transparent cladding (6) which does not cause any change in wavelength of the radiation passing through the phosphor-containing, structured surface (4).
Bei dem in Abb. 8 dargestellten Ausführungsbeispiel handelt es sich um ein Halbleiterbauelement mit normalem LED-Design, wobei sich der Konversionsleuchtstoff (mit einer Harzdispersion) in den Hohlzylindern und der gesamten Oberfläche (4) des Halbleiterkörpers (1) befindet.
In the embodiment shown in Fig. 8 is a semiconductor device with a normal LED design, wherein the conversion luminescent material (with a resin dispersion) in the hollow cylinders and the entire surface (4) of the semiconductor body (1) is located.
Claims
1. Lichtabstrahlendes Halbleiterbauelement mit einem Halbleiterkörper (1), der im Betrieb des Halbleiterbauelements elektromagnetische Strahlung aussendet, mit mindestens einem ersten und mindestens einem zweiten elektrischen Anschluss (2, 3), die mit dem Halbleiterkörper (1) elektrisch leitend verbunden sind, wobei der Halbleiterkörper (1) eine Halbleiterschichtenfolge aufweist, die geeignet ist, im Betrieb des Halbleiterbauelementes elektromagnetische Strahlung eines ersten Wellenlängenbereiches aus dem UV, blauen und/oder grünen Spektralbereich auszusenden, und der Halbleiterkörper (1) eine strukturierte Oberfläche (4) enthaltend Hohlzylinder mit paralleler Längsachse besitzt, dadurch gekennzeichnet, dass die strukturierte Oberfläche (4) mit einem oder mehreren Lumineszenzkonversionsmaterialien beschichtet ist.1. A light-emitting semiconductor component with a semiconductor body (1) which emits electromagnetic radiation during operation of the semiconductor component, with at least one first and at least one second electrical connection (2, 3) which are electrically conductively connected to the semiconductor body (1), wherein the Semiconductor body (1) has a semiconductor layer sequence which is suitable to emit during operation of the semiconductor device electromagnetic radiation of a first wavelength range from the UV, blue and / or green spectral range, and the semiconductor body (1) a structured surface (4) containing hollow cylinder with parallel longitudinal axis characterized in that the structured surface (4) is coated with one or more luminescence conversion materials.
2. Lichtabstrahlendes Halbleiterbauelement nach Anspruch 1 , dadurch gekennzeichnet, dass die Hohlzylinder vollständig mit einem oder mehreren Lumineszenzkonversionsmaterialien befüllt sind.2. Light-emitting semiconductor component according to claim 1, characterized in that the hollow cylinders are completely filled with one or more luminescence conversion materials.
3. Lichtabstrahlendes Halbleiterbauelement nach Anspruch 1 und/oder 2, dadurch gekennzeichnet, dass die Hohlzylinder eine Tiefe aufweisen, so dass sich der Boden der Hohlzylinder in unmittelbarer Nähe der lichtemittierenden Schicht befindet.3. Light-emitting semiconductor component according to claim 1 and / or 2, characterized in that the hollow cylinders have a depth, so that the bottom of the hollow cylinder is in the immediate vicinity of the light-emitting layer.
4. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass es sich bei den Lumineszenzkonversionsmaterialien um reine Leuchtstoffpartikel oder in Harz dispergierte Leuchtstoffpartikel handelt.4. Light-emitting semiconductor component according to one or more of claims 1 to 3, characterized in that it is in the Lumineszenzkonversionsmaterialien to pure phosphor particles or resin dispersed phosphor particles is.
5. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 4 , dadurch gekennzeichnet, dass die Leuchtstoffpartikel aus mindestens einem der folgenden Leuchtstoffmaterialien besteht:5. Light-emitting semiconductor component according to one or more of claims 1 to 4, characterized in that the phosphor particles consists of at least one of the following phosphor materials:
(Y, Gd, Lu, Sc, Sm, Tb)3 (AI, Ga)5O12:Ce (mit oder ohne Pr), (Ca, Sr, Ba)2Si04:Eu, YSiO2N:Ce, Y2Si3O3N4ICe, Gd2Si3O3N4:Ce, (Y1Gd1Tb1Lu)3AI5-XSiXOi2-XNxICe, BaMgAI10O17:Eu, SrAI2O4:Eu, Sr4AI14O25)Eu1 (Ca,Sr,Ba)Si2N2O2:Eu, SrSiAI2O3N2: Eu, (Ca,Sr,Ba)2Si5N8:Eu, CaAISiN3:Eu, Molybdate, Wolframate, Vanadate, Gruppe-Ill Nitride, Oxide, jeweils einzeln oder Gemischen derselben mit einem oder mehreren Aktivatorionen wie Ce, Eu, Mn, Cr und/oder Bi.(Y, Gd, Lu, Sc, Sm, Tb) 3 (Al, Ga) 5 O 12 : Ce (with or without Pr), (Ca, Sr, Ba) 2 Si0 4 : Eu, YSiO 2 N: Ce, Y 2 Si 3 O 3 N 4 ICe, Gd 2 Si 3 O 3 N 4: Ce, (Y 1 Gd 1 Tb 1 Lu) 3 Al 5 - x Si x Oi 2-x N x ICe, BaMgAI 10 O 17: Eu, SrAl 2 O 4 : Eu, Sr 4 Al 14 O 25 ) Eu 1 (Ca, Sr, Ba) Si 2 N 2 O 2 : Eu, SrSiAl 2 O 3 N 2 : Eu, (Ca, Sr, Ba) 2 Si 5 N 8 : Eu, CaAISiN 3 : Eu, molybdate, tungstates, vanadates, Group III nitrides, oxides, individually or mixtures thereof with one or more activator ions such as Ce, Eu, Mn, Cr and / or Bi.
6. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass der Halbleiterkörper (1) ein lumineszentes IndiumAluminiumGalliumNitrid, insbesondere der Formel lnjGajAlkN, wobei 0 < i, 0 < j, 0 < k, und i+j+k=1 enthält.6. Light-emitting semiconductor component according to one or more of claims 1 to 5, characterized in that the semiconductor body (1) a luminescent indium-aluminum gallium nitride, in particular the formula InjGa j Al k N, wherein 0 <i, 0 <j, 0 <k, and i + j + k = 1.
7. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass der Halbleiterkörper (1) ein auf ZnO, TCO (Transparent conducting oxide), ZnSe oder SiC basierendes Material enthält.7. Light-emitting semiconductor component according to one or more of claims 1 to 6, characterized in that the semiconductor body (1) on a ZnO, TCO (Transparent Conducting oxide), ZnSe or SiC-based material.
8. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass der Halbleiterkörper (1) ein auf einer organischen lichtemittierenden Schicht basierendes Material oder ein auf ZnS basierendes Elektrolumineszenzelement enthält.8. Lichtabstrahlendes semiconductor device according to one or more of claims 1 to 7, characterized in that the semiconductor body (1) on an organic light-emitting Layer-based material or a ZnS-based electroluminescent element contains.
9. Lichtabstrahlendes Halbleiterbauelement nach einem oder mehreren der Ansprüche 1 bis 8 bei dem die vom Halbleiterkörper (1) ausgesandte Strahlung im nahen UV liegenden, blauen und/oder grünen Spektralbereich bei einer Wellenlänge λ zwischen 360 nm und 550 nm ein oder mehrere Lumineszenz-Intensitätsmaxima aufweist.9. Light-emitting semiconductor component according to one or more of claims 1 to 8 in which the semiconductor body (1) emitted radiation in the near UV lying blue and / or green spectral range at a wavelength λ between 360 nm and 550 nm one or more luminescence intensity maxima having.
10. Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterbauelementes nach einem oder mehreren der Ansprüche 1 bis 9, bestehend aus folgenden Verfahrensschritten:10. A method for producing a light-emitting semiconductor component according to one or more of claims 1 to 9, comprising the following method steps:
• Aufbau eines schichtförmigen Halbleiterkörpers (1) in einem lichtabstrahlenden Halbleiterbauelement enthaltend anorganische lichtemittierende Schichten nach herkömmlichen Methoden wie Gasphasenepitaxie, PVD, CVD, MOCVD, MBE (molecular beam epitaxy), LPE (liquid phase epitaxy) oder bei Einsatz von organischen lichtemittierenden Schichten nach herkömmlichen Methoden wie Aufdampfprozessen, spin coating oder inkjet printing.Construction of a layer-shaped semiconductor body (1) in a light-emitting semiconductor component containing inorganic light-emitting layers by conventional methods such as gas phase epitaxy, PVD, CVD, MOCVD, MBE (molecular beam epitaxy), LPE (liquid phase epitaxy) or by using organic light-emitting layers according to conventional methods Methods such as vapor deposition, spin coating or inkjet printing.
• anschließende Strukturierung der Oberfläche des Halbleiterkörpers (1) enthaltend Hohlzylinder mit parallelen Längsachsen über lithografische (Nano-Imprint-Technologie) und/oder Ätzverfahren, Elektronenstrahltechnik, reaktive lonenstrahlentechnologie, holografische TechnologienSubsequent structuring of the surface of the semiconductor body (1) comprising hollow cylinders with parallel longitudinal axes via lithographic (nanoimprint technology) and / or etching processes, electron beam technology, reactive ion beam technology, holographic technologies
• Beschichten der Oberfläche des Halbleiterkörpers (1) mit Konversionsmaterialien oder Konversionsprecursoren mit anschließender thermischer Behandlung. • Anbringen von elektrischen Kontakten an den Halbleiterkörper (1) nach herkömmlichen Methoden wie Aufbringen von Edelmetallen wie Silber oder Gold.Coating the surface of the semiconductor body (1) with conversion materials or conversion precursors with subsequent thermal treatment. • Attaching electrical contacts to the semiconductor body (1) by conventional methods such as deposition of precious metals such as silver or gold.
• Anlöten von Drähten zur Bestromung.• Soldering of wires for energization.
• Verkapselung mit Silikon- oder Epoxyharz und ggf. Anbringung von Sekundäroptiken.• Encapsulation with silicone or epoxy resin and, if necessary, attachment of secondary optics.
11. Verwendung des lichtabstrahlenden Halbleiterbauelementes nach einem oder mehreren der Ansprüche 1 bis 9 zur Konversion der Primärstrahlung des Halbleiterbauelementes in längerwellige monochromatische oder multichromatische Strahlung.11. Use of the light-emitting semiconductor component according to one or more of claims 1 to 9 for the conversion of the primary radiation of the semiconductor component in longer-wavelength monochromatic or multichromatic radiation.
12. Verwendung des lichtabstrahlenden Halbleiterbauelementes nach einem oder mehreren der Ansprüche 1 bis 9 zur Konversion der Primärstrahlung in einen bestimmten Farbpunkt nach dem Color-on- demand-Konzept. 12. Use of the light-emitting semiconductor component according to one or more of claims 1 to 9 for the conversion of the primary radiation into a specific color point according to the color-on-demand concept.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007003785A DE102007003785A1 (en) | 2007-01-19 | 2007-01-19 | Emitter converter chip |
| DE102007003785.8 | 2007-01-19 |
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| WO2008086855A1 true WO2008086855A1 (en) | 2008-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/EP2007/010772 WO2008086855A1 (en) | 2007-01-19 | 2007-12-11 | Emitter-converter chip |
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| DE (1) | DE102007003785A1 (en) |
| TW (1) | TW200840097A (en) |
| WO (1) | WO2008086855A1 (en) |
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| EP2017322A1 (en) * | 2007-07-19 | 2009-01-21 | Kabushiki Kaisha Toshiba | Luminescent material |
| WO2009119034A1 (en) * | 2008-03-26 | 2009-10-01 | Panasonic Corporation | Semiconductor light-emitting apparatus |
| WO2012062635A1 (en) * | 2010-11-12 | 2012-05-18 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for producing same |
| US8969893B2 (en) | 2010-04-28 | 2015-03-03 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and lighting system |
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| JP2012502475A (en) * | 2008-09-04 | 2012-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | Light source with improved monochromaticity |
| CN102197551A (en) | 2008-09-04 | 2011-09-21 | 3M创新有限公司 | II-VI MQW VCSEL on a heat sink optically pumped by a GAN LD |
| CN102197554A (en) | 2008-09-04 | 2011-09-21 | 3M创新有限公司 | Monochromatic light source |
| WO2010027649A1 (en) | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source with high aspect ratio |
| KR101662010B1 (en) * | 2010-05-20 | 2016-10-05 | 엘지이노텍 주식회사 | Light Emitting Device |
| DE102010051287A1 (en) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for its production |
| DE102011115083A1 (en) * | 2011-09-19 | 2013-03-21 | Osram Opto Semiconductors Gmbh | Converter wafer, radiation-emitting component with such a converter wafer and method for producing such a converter wafer |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200840097A (en) | 2008-10-01 |
| DE102007003785A1 (en) | 2008-07-24 |
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