WO2008084825A1 - Liquid crystal photomask for exposure apparatus, exposure apparatus and exposure method - Google Patents

Liquid crystal photomask for exposure apparatus, exposure apparatus and exposure method Download PDF

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Publication number
WO2008084825A1
WO2008084825A1 PCT/JP2008/050172 JP2008050172W WO2008084825A1 WO 2008084825 A1 WO2008084825 A1 WO 2008084825A1 JP 2008050172 W JP2008050172 W JP 2008050172W WO 2008084825 A1 WO2008084825 A1 WO 2008084825A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
exposure apparatus
exposure
photomask
light
Prior art date
Application number
PCT/JP2008/050172
Other languages
French (fr)
Japanese (ja)
Inventor
Yuichiro Haramoto
Original Assignee
Nippon Chemical Industrial Co., Ltd.
Yamanashi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemical Industrial Co., Ltd., Yamanashi University filed Critical Nippon Chemical Industrial Co., Ltd.
Publication of WO2008084825A1 publication Critical patent/WO2008084825A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

Provided are a liquid crystal photomask for an exposure apparatus, which has excellent light transmission efficiency and light blocking efficiency, and an exposure apparatus and an exposure method using such liquid crystal photomask. A liquid crystal photomask (1) for the exposure apparatus is provided with one or more liquid crystal shutters (7) which selectively transmit and block light emitted from an exposure light source (11). The liquid crystal shutter (7) is provided with a pair of transparent electrodes (2, 3) and a light control layer (4) arranged between the transparent electrodes (2, 3). The light control layer (4) includes a bar-like compound having an extremely long absorption wavelength within a range of 200-450nm, and a bar-like liquid crystal compound. Preferably, the light control layer further contains a polymeric compound.
PCT/JP2008/050172 2007-01-11 2008-01-10 Liquid crystal photomask for exposure apparatus, exposure apparatus and exposure method WO2008084825A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007003841A JP2008172026A (en) 2007-01-11 2007-01-11 Liquid crystal photomask for exposure device, exposure device, and exposure method
JP2007-003841 2007-01-11

Publications (1)

Publication Number Publication Date
WO2008084825A1 true WO2008084825A1 (en) 2008-07-17

Family

ID=39608713

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050172 WO2008084825A1 (en) 2007-01-11 2008-01-10 Liquid crystal photomask for exposure apparatus, exposure apparatus and exposure method

Country Status (2)

Country Link
JP (1) JP2008172026A (en)
WO (1) WO2008084825A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2422374A4 (en) * 2009-04-21 2016-09-14 Tetrasun Inc Method for forming structures in a solar cell
KR20140030196A (en) * 2011-05-20 2014-03-11 스미토모 쇼지 가부시키가이샤 Method for manufacturing pattern structure
KR102393585B1 (en) * 2014-12-18 2022-05-03 한국전자기술연구원 Electric active photo-mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115415A (en) * 1985-11-15 1987-05-27 Hitachi Ltd Image forming device
JPH02237011A (en) * 1989-03-09 1990-09-19 Mitsubishi Electric Corp Reticle for reduction projection aligner, reduction projection aligner, large-scale ic manufacture and large-scale ic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115415A (en) * 1985-11-15 1987-05-27 Hitachi Ltd Image forming device
JPH02237011A (en) * 1989-03-09 1990-09-19 Mitsubishi Electric Corp Reticle for reduction projection aligner, reduction projection aligner, large-scale ic manufacture and large-scale ic

Also Published As

Publication number Publication date
JP2008172026A (en) 2008-07-24

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