WO2008083524A1 - Method for manufactureing infrared remote-control receiving-amplifier - Google Patents

Method for manufactureing infrared remote-control receiving-amplifier Download PDF

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Publication number
WO2008083524A1
WO2008083524A1 PCT/CN2007/000131 CN2007000131W WO2008083524A1 WO 2008083524 A1 WO2008083524 A1 WO 2008083524A1 CN 2007000131 W CN2007000131 W CN 2007000131W WO 2008083524 A1 WO2008083524 A1 WO 2008083524A1
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WIPO (PCT)
Prior art keywords
infrared remote
substrate
chip
receiving amplifier
control receiving
Prior art date
Application number
PCT/CN2007/000131
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French (fr)
Chinese (zh)
Inventor
Wei Chen
Guangyang Wei
Xiaohong Li
Yujiang Li
Guiyuan Lin
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Xiamen Hualian Electronics Co., Ltd.
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Publication date
Application filed by Xiamen Hualian Electronics Co., Ltd. filed Critical Xiamen Hualian Electronics Co., Ltd.
Priority to PCT/CN2007/000131 priority Critical patent/WO2008083524A1/en
Publication of WO2008083524A1 publication Critical patent/WO2008083524A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Definitions

  • the present invention relates to a method of manufacturing an infrared remote control receiving amplifier, and more particularly to a novel inner shield design of an infrared remote receiving amplifier.
  • BACKGROUND At present, there are two shielding methods adopted by an infrared remote controller: The first shielding method is an integrated inner shielding method, which is a part of the bracket extending, and then turned over, as a shield, the solution cannot fully wrap the chip. The shielding range is small, the shielding effect is not good, and the material is limited by the bracket material, and only the same material as the bracket can be used.
  • the second type of shielding is internal shielding. It is equipped with an iron shell in various ways after the chip is mounted on the bracket.
  • the invention relates to a method for manufacturing an infrared remote control receiving amplifier;
  • the infrared remote control receiving amplifier is mainly composed of a substrate, a pin, a shell and a colloidal compound encapsulating material; the steps are as follows: (1) sticking an inherent IC chip on the substrate, Photoelectric chip; (2) curing with a colloidal compound encapsulation material to form an inner package body, encapsulating the substrate, the IC chip, the optoelectronic chip and the lead in the inner package; (3) assembling the case to the cured inner package body And grounding it; (4) Finally, the inner package of the assembled housing is cured again with the colloidal compound material to form an outer package body.
  • At least three of the pins are on one side of the substrate, and at least two of the pins have a gap with the substrate.
  • the sides of the casing are folded down to match the thickness of the inner package after the first curing of the colloidal compound encapsulating material.
  • the present invention first encapsulates the chip mounted on the substrate with the colloidal compound material, and forms the outer shape of the inner package of a smaller size, and then shields the casing with the shield, thereby improving the reliability of the product.
  • Sex, the inner chip and the gold wire have the outer first layer of solidified colloidal compound protection, and will not encounter the gold wire and the chip during the casing process. question.
  • the method has simple manufacturing process, high yield and high reliability.
  • FIG. 1 is a front elevational view of the present invention in which a chip is mounted on a support;
  • Figure 2 is a front elevational view of the first package of the present invention
  • Figure 3 is a front elevational view of the present invention after the shield is placed;
  • FIG. 4 is a front elevational view of the second package of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is a method for manufacturing an inner shield of an infrared remote control receiving amplifier; the infrared remote receiving amplifier is mainly composed of a substrate 1, an IC chip 2, an optoelectronic chip 3, a pin 4, a shielded housing 5, and The composition of the colloidal compound encapsulation material.
  • the manufacturing steps are as follows: (1) sticking the intrinsic IC chip 2 and the optoelectronic chip 3 on the substrate 1; (2) curing the encapsulant with the colloidal compound to form the inner package 6 (first package), and the substrate 1, IC
  • the chip 2, the optoelectronic chip 3 and the lead 4 are wrapped in the inner package body 6; (3) the housing 5 is assembled to the cured inner package body 6, and the solder joint 52 on the housing is the same as the ground on the substrate 11 grounding; (4) Finally, the inner package body 6 of the assembled housing 5 is again wrapped with the colloidal compound encapsulation material in a solidified manner (second package) to form an outer package body 7, ie: the last product .
  • At least three of the pins 4 in the present invention are on the side of the substrate 1, and at least two of the pins 4 have a gap with the substrate 1.
  • the material of the casing 5 of the present invention is iron, copper or alloy material, and a window 51 is provided on the front surface of the casing 5.
  • the shape of the window 51 may be a cross shape, a grid shape or a strip shape.
  • the substrate 1 of the present invention may be a stent type, a frame type, and a printed circuit board, and the material thereof is an iron, copper or alloy material.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

A method for manufacturing an infrared remote-control receiving-amplifier which includes a substrate (1), pins (4), a shell (5) and encapsulated bodies (6,7) includes the following steps: fixing an IC chip and a photoelectricity chip on the substrate; producing the inner encapsulated body (6) by solidifying the colloid compound material, which encapsulates the substrate, the IC chip, the photoelectricity chip and the pins; assembling the shell on the inner encapsulated body and grounding it; forming an outer encapsulated body (7) by again using the colloid compound material to encapsulating the inner encapsulated body which has assembled theshell.

Description

红外遥控接收放大器制造方法 技术领域 本发明涉及一种红外遥控接收放大器制造方法，特別是涉及一种 红外遥控接收放大器新的内屏蔽设计。 背景技术 目前， 红外遥控器采用的屏蔽方式有两种： 第一种屏蔽方式是一 体化内屏蔽方式，它是在支架上延伸一部分，再翻转过来，作为屏蔽， 该方案由于无法全面包裹住芯片， 屏蔽范围小， 屏蔽效果不好， 并且 材料受支架材料限制， 只能采用同支架相同的材料。 第二种屏蔽方式 是内屏蔽， 它是在支架上装好芯片后再用各种方式套上一个铁壳， 该 方式主要是可靠性不好，在套铁壳过程中容易影响到支架上的金丝和 芯片， 可靠性不高， 该方法制造工艺较为复杂， 成品率较低。 发明内容 本发明的目的在于提供一种红外遥控接收放大器内屏蔽制作方 法， 该方法可很好的避免在套壳体过程中出现碰到金丝和芯片的问 题， 提高产品的成品率。  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an infrared remote control receiving amplifier, and more particularly to a novel inner shield design of an infrared remote receiving amplifier. BACKGROUND At present, there are two shielding methods adopted by an infrared remote controller: The first shielding method is an integrated inner shielding method, which is a part of the bracket extending, and then turned over, as a shield, the solution cannot fully wrap the chip. The shielding range is small, the shielding effect is not good, and the material is limited by the bracket material, and only the same material as the bracket can be used. The second type of shielding is internal shielding. It is equipped with an iron shell in various ways after the chip is mounted on the bracket. This method is mainly poor in reliability, and it is easy to affect the gold on the bracket during the process of covering the iron shell. Wire and chip, the reliability is not high, the manufacturing process of this method is more complicated and the yield is lower. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for fabricating a shield in an infrared remote control receiving amplifier, which can avoid the problem of encountering a gold wire and a chip in a casing process and improve the yield of the product.
为实现上述目的， 本发明的技术解决方案是：  To achieve the above object, the technical solution of the present invention is:
本发明是一种红外遥控接收放大器制造方法；所述的红外遥控接 收放大器主要由基板、 引脚、 壳体和胶体化合物封装材料组成； 其步 骤如下： （1 )在基板上粘固有 IC芯片、 光电芯片； （2 )用胶体化合 物封装材料固化后制成内封装体， 将基板、 IC 芯片、 光电芯片和引 脚包裹在内封装体内； （ 3 )壳体装配到固化后的内封装体上， 并令其 接地； ( 4 )最后将装配好壳体的内封装体用胶体化合物材料再次固化 后包裹起来， 形成一层外封装体体。  The invention relates to a method for manufacturing an infrared remote control receiving amplifier; the infrared remote control receiving amplifier is mainly composed of a substrate, a pin, a shell and a colloidal compound encapsulating material; the steps are as follows: (1) sticking an inherent IC chip on the substrate, Photoelectric chip; (2) curing with a colloidal compound encapsulation material to form an inner package body, encapsulating the substrate, the IC chip, the optoelectronic chip and the lead in the inner package; (3) assembling the case to the cured inner package body And grounding it; (4) Finally, the inner package of the assembled housing is cured again with the colloidal compound material to form an outer package body.
所述的引脚中至少有三只引脚在基板一侧，其中至少二只引脚同 基板有间隙。  At least three of the pins are on one side of the substrate, and at least two of the pins have a gap with the substrate.
壳体两侧折下，和第一次用胶体化合物封装材料固化后的内封装 体厚度相适应。  The sides of the casing are folded down to match the thickness of the inner package after the first curing of the colloidal compound encapsulating material.
采用上述方案后，由于本发明先用胶体化合物材料对安装在基板 上的芯片封装， 制成较小尺寸的内封装体外形， 再在其上套上起屏蔽 作用的壳体， 可以提高产品可靠性， 内部芯片和金丝有外部第一层固 化的胶体化合物保护，不会在套壳体过程中出现碰到金丝和芯片的问 题。 该方法制造工艺较为简单， 成品率较高， 可靠性高。 After adopting the above solution, since the present invention first encapsulates the chip mounted on the substrate with the colloidal compound material, and forms the outer shape of the inner package of a smaller size, and then shields the casing with the shield, thereby improving the reliability of the product. Sex, the inner chip and the gold wire have the outer first layer of solidified colloidal compound protection, and will not encounter the gold wire and the chip during the casing process. question. The method has simple manufacturing process, high yield and high reliability.
下面结合附图和具体实施例对本发明作进一步的说明。· 附图说明 图 1是本发明将芯片装在支架上的正视图；  The invention will now be further described with reference to the drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front elevational view of the present invention in which a chip is mounted on a support;
图 2是本发明第一次封装的正视图；  Figure 2 is a front elevational view of the first package of the present invention;
图 3是本发明的套上屏蔽罩后的正视图；  Figure 3 is a front elevational view of the present invention after the shield is placed;
图 4是本发明的第二次封装的正视图。 具体实施方式 本发明是一种红外遥控接收放大器内屏蔽制作方法； 所述的红 外遥控接收放大器主要由基板 1、 IC芯片 2、 光电芯片 3、·引脚 4、 起屏蔽作用的壳体 5和胶体化合物封装材料组成。 其制造步骤如下： ( 1 )在基板 1上粘固有 IC芯片 2和光电芯片 3; ( 2 ) 用胶体 化合物封装材料固化后制成内封装体 6 (第一次封装）， 将基板 1、 IC 芯片 2、 光电芯片 3和引脚 4包裹在内封装体 6内； （3 ) 壳体 5装配 到固化后的内封装体 6上， 并令壳体上的焊接点 52同基板上的地脚 11接地； （ 4 ) 最后将装配好壳体 5的内封装体 6用胶体化合物封装 材料再次以固化的方式包裹起来（第二次封装）， 形成一层外封装体 7 , 即： 最后的产品。  Figure 4 is a front elevational view of the second package of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is a method for manufacturing an inner shield of an infrared remote control receiving amplifier; the infrared remote receiving amplifier is mainly composed of a substrate 1, an IC chip 2, an optoelectronic chip 3, a pin 4, a shielded housing 5, and The composition of the colloidal compound encapsulation material. The manufacturing steps are as follows: (1) sticking the intrinsic IC chip 2 and the optoelectronic chip 3 on the substrate 1; (2) curing the encapsulant with the colloidal compound to form the inner package 6 (first package), and the substrate 1, IC The chip 2, the optoelectronic chip 3 and the lead 4 are wrapped in the inner package body 6; (3) the housing 5 is assembled to the cured inner package body 6, and the solder joint 52 on the housing is the same as the ground on the substrate 11 grounding; (4) Finally, the inner package body 6 of the assembled housing 5 is again wrapped with the colloidal compound encapsulation material in a solidified manner (second package) to form an outer package body 7, ie: the last product .
本发明中的引脚 4中至少有三只引脚在基板 1一侧，其中至少二 只引脚 4同基板 1有间隙。  At least three of the pins 4 in the present invention are on the side of the substrate 1, and at least two of the pins 4 have a gap with the substrate 1.
为了使产品更加美观， 在壳体 5两侧折下， 和第一次用胶体化合 物封装材料固化后的内封装体 6厚度相适应。  In order to make the product more beautiful, it is folded down on both sides of the casing 5, and is adapted to the thickness of the inner package 6 which is cured by the first embodiment of the colloidal compound encapsulating material.
本发明的壳体 5材料为铁， 铜或合金材料， 在壳体 5正面设有一 个窗口 51 , 窗口 51形状可以为十字状、 网格状、 条状。  The material of the casing 5 of the present invention is iron, copper or alloy material, and a window 51 is provided on the front surface of the casing 5. The shape of the window 51 may be a cross shape, a grid shape or a strip shape.
本发明的基板 1可以为支架式、框架式和印刷电路板， 其材料为 铁， 铜或合金材料。  The substrate 1 of the present invention may be a stent type, a frame type, and a printed circuit board, and the material thereof is an iron, copper or alloy material.

Claims

权 利 要 求 书 Claim
1、 一种红外遥控接收放大器制造方法； 所述的红外遥控接收放 大器主要由基板、 引脚、 壳体和胶体化合物封装材料组成； 其特征在 于： 其步骤如下： （1 )在基板上粘固有 IC芯片、 光电芯片； （2 )用 胶体化合物封装材料固化后制成内封装体， 将基板、 IC 芯片、 光电 芯片和引脚包裹在内封装体内；（ 3 )壳体装配到固化后的内封装体上， 并令其接地； ( 4 )最后将装配好壳体的内封装体用胶体化合物材料再 次固化包裹起来， 形成一层外封装体。 1. An infrared remote control receiving amplifier manufacturing method; the infrared remote control receiving amplifier is mainly composed of a substrate, a pin, a shell and a colloidal compound encapsulating material; and the method is as follows: (1) inherently sticky on the substrate IC chip, optoelectronic chip; (2) curing with a colloidal compound encapsulation material to form an inner package body, encapsulating the substrate, IC chip, optoelectronic chip and lead in the inner package; (3) assembling the case to the cured body The package body is grounded and grounded; (4) Finally, the inner package body of the assembled housing is re-solidified with a colloidal compound material to form an outer package.
2、 根据权利要求 1所述的红外遥控接收放大器制造方法， 其特 征在于： 所述的引脚中至少有三只引脚在基板一侧， 其中至少二只引 脚同基板有间隙。  2. The method of manufacturing an infrared remote control receiving amplifier according to claim 1, wherein: at least three of the pins are on a side of the substrate, and at least two of the pins have a gap with the substrate.
3、 根据权利要求 1所述的红外遥控接收放大器制造方法， 其特 征在于： 壳体两侧折下， 和第一次用胶体化合物封装材料固化后的内 封装体厚度相适应。  3. The method of manufacturing an infrared remote control receiving amplifier according to claim 1, wherein: the sides of the casing are folded down to be compatible with the thickness of the inner package after the first curing of the colloidal compound encapsulating material.
4、 根据权利要求 1或 3或 5所述的红外遥控接收放大器， 其特 征在于壳体正面设有一个窗口， 窗口形状可以为十字状， 网格状， 条 状。  The infrared remote control receiving amplifier according to claim 1 or 3 or 5, wherein the front surface of the casing is provided with a window, and the window shape may be a cross shape, a grid shape or a strip shape.
5、 根据权利要求 1所述的红外遥控接收放大器， 其特征在于壳 体材料为铁， 铜或合金材料。  5. The infrared remote receiving amplifier of claim 1 wherein the housing material is an iron, copper or alloy material.
6、 根据权利要求 1所述的红外遥控接收放大器， 其特征在于基 板可以为支架式， 框架式和印刷电路板。 材料为铁， 铜或合金材料。  6. The infrared remote receiving amplifier of claim 1 wherein the substrate is of a bracket type, a frame type, and a printed circuit board. The material is iron, copper or alloy material.
PCT/CN2007/000131 2007-01-12 2007-01-12 Method for manufactureing infrared remote-control receiving-amplifier WO2008083524A1 (en)

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Publication number Priority date Publication date Assignee Title
JPH04324686A (en) * 1991-04-24 1992-11-13 Sharp Corp Optical semiconductor device
US5355016A (en) * 1993-05-03 1994-10-11 Motorola, Inc. Shielded EPROM package
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CN2391281Y (en) * 1998-08-07 2000-08-09 厦门华联电子有限公司 Supporting and enclosing structure for infrared remote control receiving amplifier
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