WO2008079662A1 - Semiconductor chip shape alteration - Google Patents

Semiconductor chip shape alteration Download PDF

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Publication number
WO2008079662A1
WO2008079662A1 PCT/US2007/087082 US2007087082W WO2008079662A1 WO 2008079662 A1 WO2008079662 A1 WO 2008079662A1 US 2007087082 W US2007087082 W US 2007087082W WO 2008079662 A1 WO2008079662 A1 WO 2008079662A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chip
dicing
semiconductor
para
channels
Prior art date
Application number
PCT/US2007/087082
Other languages
French (fr)
Inventor
Mukta G. Farooq
Dae-Young Jung
Ian D. Melville
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to JP2009543064A priority Critical patent/JP2010514223A/en
Priority to EP07865500A priority patent/EP2095419A4/en
Publication of WO2008079662A1 publication Critical patent/WO2008079662A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates generally to semiconductor devices, and more particularly to a semiconductor chip shape alteration.
  • the shape of a semiconductor chip is important to semiconductor technology.
  • the shape of a semiconductor chip can cause physical stress on the semiconductor chip. Stress on the semiconductor chip causes delamination, which is the fracture of a semiconductor chip's Back End of the Line (“BEOL”) materials, which in turn leads to semiconductor chip failure.
  • BEOL Back End of the Line
  • Prior art semiconductor chips are limited to square and rectangular shapes, which introduce the most stress on the semiconductor chip, because of the ninety degree corners inherent in such shapes.
  • Figures Ia-Ib depict a prior art semiconductor wafer 100 and chip 110. Note the perpendicular dicing channels 102 in the prior art semiconductor wafer 100. Once diced, singulated die, also known as semiconductor chips, are separated from the semiconductor wafer 100. Once separated, the semiconductor chips 110 have a square or rectangular shape. Figure Ib highlights the problem associated with prior art semiconductor chips 110. More specifically, a semiconductor chip 110 diced from the prior art semiconductor wafer 100 results in a square or rectangular semiconductor chip 110.
  • Prior art square and rectangular semiconductor chip 110 shapes introduce stress on the semiconductor chip 110, and particularly at the corners 108. Such stress causes delamination, which is a problem in prior art semiconductor chips 110. Often delamination begins in the triangular zone 106 and travels toward the active area 112 of the semiconductor chip 110. Once delamination reaches the active area 112, the semiconductor chip 110 fails. While prior art semiconductor chips 110 include a crackstop, which functions to prevent delamination into the active area 112, crackstops 112 are largely ineffective as semiconductor technology evolves because low-k dielectric is more frequently used. Low k dielectric material is particularly susceptible to delamination.
  • the invention is directed to a method for creating a semiconductor chip.
  • the method comprises a creating and dicing step.
  • the creating step comprises creating a hole in a semiconductor wafer comprising semiconductor chips separated by dicing channels.
  • the hole is created at an intersection of the dicing channels.
  • the dicing step comprises dicing through the dicing channels and a portion of the semiconductor chip at the intersection of the dicing channels.
  • Prior art methods for semiconductor chip creation focus on dicing efficiency and manufacturing cost minimization. Prior art methods specify neither the alteration of semiconductor chip shape nor the influence of chip shape on stress to the semiconductor chip. Even were prior art methods to focus on alteration of semiconductor chip shape, which prior art methods have not, prior art methods would not focus on the increased propensity of certain semiconductors materials to cause delamination within the semiconductor chips. More specifically, as semiconductor technology evolves, low k dielectric materials are more frequently utilized, which are prone to delamination.
  • Figure Ia depicts a prior art semiconductor wafer 100
  • Figure Ib depicts a prior art semiconductor chip diced from the semiconductor wafer 100 of Figure Ia;
  • Figure 2a depicts a semiconductor wafer 200 of a first embodiment of the invention
  • Figure 2b depicts a semiconductor chip 210 diced from the semiconductor wafer 200 of Figure 2a;
  • Figure 3 depicts a semiconductor wafer 300 of a second embodiment of the invention.
  • Figure 4 depicts a semiconductor wafer 400 of a third embodiment of the invention.
  • the invention is directed to a method for creating a semiconductor chip absent any ninety degree angles.
  • the semiconductor chip originates from a semiconductor wafer with dicing channels that separate semiconductor chips and holes at each intersection of the dicing channels. Once diced, semiconductor chips are created without any ninety degree angles.
  • FIG. 20 An embodiment of the invention 200 will be described with reference to the Figure 2a.
  • the semiconductor wafer 200 includes holes 220 at the intersection of the dicing channels 102.
  • the holes 220 can be created by laser drilling, Bosch process deep drilling, photolithography followed by reactive ion etching, or ion milling.
  • semiconductor chips 210 as shown in Figure 2a are created.
  • the semiconductor wafer 200 can be diced by mechanical saw blade dicing or laser dicing.
  • Figure 2b further depicts the semiconductor chip 210 diced from the semiconductor wafer 200 of Figure 2a. As shown, the semiconductor chip 210 does not have a corner with a ninety degree angle 220.
  • the semiconductor chip 210 has a reduced underfill to hard passivation layer (triangular zone 106).
  • the triangular zone 106 is substantially reduced in the embodiment, while maintaining the crackstop 104.
  • the substantially reduced triangular zone 106 reduces the initiation, and therefore the propagation of cracks in the semiconductor chip 210.
  • Figure 2a depicts holes 220 with a circle shape
  • Figures 3-4 depict holes 220 of another shape.
  • Figure 3 depicts a semiconductor wafer 300 of a further embodiment of the invention. More specifically, Figure 3 depicts holes 220 with a diamond shape. Similar to the holes 220 with a circle shape shown in Figure 2a, the holes 220 with a diamond shape in Figure 3, substantially reduces the triangular zone 106 (not shown), which in turn reduces the initiation and propagation of cracks in the semiconductor chip 210. Note that the semiconductor chip 310 in Figure 3, similar to the semiconductor chip in Figure 2b, has the advantage of corners without ninety degree corners. Note the exploded view 310a of a corner of the semiconductor chip shown in Figure 3. As shown in the exploded view 310a, the corner of the semiconductor chip does not have a ninety degree corner.
  • Figure 4 depicts a semiconductor wafer 400 of a third embodiment of the invention. Similar to the semiconductor chips in Figures 2b and 3, the semiconductor chip 410 in Figure 4 does not have a ninety degree corner. The corner in the semiconductor chip 410 of Figure 4 has a concave shape. As shown in the exploded view 410a of the semiconductor chip 410 the corner has a concave shape, which necessarily requires that the corner does not have a ninety degree corner. Similar to Figures 1-3, the semiconductor wafer 400 has dicing channels 102. Further, similar to Figures 2a and 3, the semiconductor wafer 400 has holes 220. The shape of the holes 220 in the semiconductor wafer 400 of Figure 4 creates a corner in the semiconductor chip 410 with a concave shape.
  • the invention solves the aforementioned problems associated with prior art semiconductor chips. More specifically, the invention eliminates any corner with a ninety degree angle in a semiconductor chip.
  • the invention is useful in the field of semiconductor devices, and more particularly to a method for creation of a semiconductor chip.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)

Abstract

The invention is directed to an improved semiconductor chip that reduces crack initiation and propagation into the active area of a semiconductor chip. A semiconductor wafer includes dicing channels (102) that separate semiconductor chips and holes (220) through a portion of a semiconductor chip, which are located at the intersection of the dicing channels (102). Once diced from the semiconductor wafer, semiconductor chips are created without ninety degree angle corners.

Description

SEMICONDUCTOR CHIP SHAPE ALTERATION
BACKGROUND OF THE INVENTION
Technical Field
[Para 1] The invention relates generally to semiconductor devices, and more particularly to a semiconductor chip shape alteration.
Background Art
[Para 2] The shape of a semiconductor chip is important to semiconductor technology. The shape of a semiconductor chip can cause physical stress on the semiconductor chip. Stress on the semiconductor chip causes delamination, which is the fracture of a semiconductor chip's Back End of the Line ("BEOL") materials, which in turn leads to semiconductor chip failure. Prior art semiconductor chips are limited to square and rectangular shapes, which introduce the most stress on the semiconductor chip, because of the ninety degree corners inherent in such shapes.
[Para 3] Figures Ia-Ib depict a prior art semiconductor wafer 100 and chip 110. Note the perpendicular dicing channels 102 in the prior art semiconductor wafer 100. Once diced, singulated die, also known as semiconductor chips, are separated from the semiconductor wafer 100. Once separated, the semiconductor chips 110 have a square or rectangular shape. Figure Ib highlights the problem associated with prior art semiconductor chips 110. More specifically, a semiconductor chip 110 diced from the prior art semiconductor wafer 100 results in a square or rectangular semiconductor chip 110.
[Para 4] Prior art square and rectangular semiconductor chip 110 shapes introduce stress on the semiconductor chip 110, and particularly at the corners 108. Such stress causes delamination, which is a problem in prior art semiconductor chips 110. Often delamination begins in the triangular zone 106 and travels toward the active area 112 of the semiconductor chip 110. Once delamination reaches the active area 112, the semiconductor chip 110 fails. While prior art semiconductor chips 110 include a crackstop, which functions to prevent delamination into the active area 112, crackstops 112 are largely ineffective as semiconductor technology evolves because low-k dielectric is more frequently used. Low k dielectric material is particularly susceptible to delamination.
[Para 5] What is needed in the art is an improved semiconductor chip shape that reduces delamination.
DISCLOSURE OF THE INVENTION
[Para 6] The invention is directed to a method for creating a semiconductor chip. The method comprises a creating and dicing step. The creating step comprises creating a hole in a semiconductor wafer comprising semiconductor chips separated by dicing channels. The hole is created at an intersection of the dicing channels. The dicing step comprises dicing through the dicing channels and a portion of the semiconductor chip at the intersection of the dicing channels.
[Para 7] The invention solves the problem of delamination by creation of a semiconductor chip without any ninety degree corners. The absence of ninety degree corners reduces physical stress on the semiconductor chip, which in turn mitigates against delamination.
[Para 8] Prior art methods for semiconductor chip creation focus on dicing efficiency and manufacturing cost minimization. Prior art methods specify neither the alteration of semiconductor chip shape nor the influence of chip shape on stress to the semiconductor chip. Even were prior art methods to focus on alteration of semiconductor chip shape, which prior art methods have not, prior art methods would not focus on the increased propensity of certain semiconductors materials to cause delamination within the semiconductor chips. More specifically, as semiconductor technology evolves, low k dielectric materials are more frequently utilized, which are prone to delamination.
[Para 9] The invention solves the aforementioned problems associated with prior art semiconductor chips.
[Para 10] For at least the foregoing reasons, the invention improves semiconductor technology. BRIEF DESCRIPTION OF THE DRAWINGS
[Para 11] The features and the element characteristics of the invention are set forth with particularity in the appended claims. The figures are for illustrative purposes only and are not drawn to scale. Furthermore, like numbers represent like features in the drawings. The invention itself, however, both as to organization and method of operation, may best be understood by reference to the detailed description which follows, taken in conjunction with the accompanying figures, in which:
[Para 12] Figure Ia depicts a prior art semiconductor wafer 100;
[Para 13] Figure Ib depicts a prior art semiconductor chip diced from the semiconductor wafer 100 of Figure Ia;
[Para 14] Figure 2a depicts a semiconductor wafer 200 of a first embodiment of the invention;
[Para 15] Figure 2b depicts a semiconductor chip 210 diced from the semiconductor wafer 200 of Figure 2a;
[Para 16] Figure 3 depicts a semiconductor wafer 300 of a second embodiment of the invention; and, [Para 17] Figure 4 depicts a semiconductor wafer 400 of a third embodiment of the invention.
BEST MODE FOR CARRYING OUT THE INVENTION
[Para 18] The invention will now be described with reference to the accompanying figures. In the figures, various aspects of the structures have been depicted and schematically represented in a simplified manner to more clearly describe and illustrate the invention.
[Para 19] By way of overview and introduction, the invention is directed to a method for creating a semiconductor chip absent any ninety degree angles. The semiconductor chip originates from a semiconductor wafer with dicing channels that separate semiconductor chips and holes at each intersection of the dicing channels. Once diced, semiconductor chips are created without any ninety degree angles.
[Para 20] An embodiment of the invention 200 will be described with reference to the Figure 2a. As shown the semiconductor wafer 200 includes holes 220 at the intersection of the dicing channels 102. The holes 220 can be created by laser drilling, Bosch process deep drilling, photolithography followed by reactive ion etching, or ion milling. Once the semiconductor wafer 200 is diced, semiconductor chips 210 as shown in Figure 2a are created. The semiconductor wafer 200 can be diced by mechanical saw blade dicing or laser dicing. [Para 21] Figure 2b further depicts the semiconductor chip 210 diced from the semiconductor wafer 200 of Figure 2a. As shown, the semiconductor chip 210 does not have a corner with a ninety degree angle 220. Therefore, the semiconductor chip 210 has a reduced underfill to hard passivation layer (triangular zone 106). Note that the triangular zone 106 is substantially reduced in the embodiment, while maintaining the crackstop 104. The substantially reduced triangular zone 106 reduces the initiation, and therefore the propagation of cracks in the semiconductor chip 210. While Figure 2a, depicts holes 220 with a circle shape, Figures 3-4 depict holes 220 of another shape.
[Para 22] Figure 3 depicts a semiconductor wafer 300 of a further embodiment of the invention. More specifically, Figure 3 depicts holes 220 with a diamond shape. Similar to the holes 220 with a circle shape shown in Figure 2a, the holes 220 with a diamond shape in Figure 3, substantially reduces the triangular zone 106 (not shown), which in turn reduces the initiation and propagation of cracks in the semiconductor chip 210. Note that the semiconductor chip 310 in Figure 3, similar to the semiconductor chip in Figure 2b, has the advantage of corners without ninety degree corners. Note the exploded view 310a of a corner of the semiconductor chip shown in Figure 3. As shown in the exploded view 310a, the corner of the semiconductor chip does not have a ninety degree corner.
[Para 23] Figure 4 depicts a semiconductor wafer 400 of a third embodiment of the invention. Similar to the semiconductor chips in Figures 2b and 3, the semiconductor chip 410 in Figure 4 does not have a ninety degree corner. The corner in the semiconductor chip 410 of Figure 4 has a concave shape. As shown in the exploded view 410a of the semiconductor chip 410 the corner has a concave shape, which necessarily requires that the corner does not have a ninety degree corner. Similar to Figures 1-3, the semiconductor wafer 400 has dicing channels 102. Further, similar to Figures 2a and 3, the semiconductor wafer 400 has holes 220. The shape of the holes 220 in the semiconductor wafer 400 of Figure 4 creates a corner in the semiconductor chip 410 with a concave shape.
[Para 24] Unlike the prior art depicted in Figures la-b, the embodiments depicted in Figures 2a-4 reduce delamination initiation and propagation by eliminating semiconductor chips with corners having ninety degree angles.
[Para 25] The invention solves the aforementioned problems associated with prior art semiconductor chips. More specifically, the invention eliminates any corner with a ninety degree angle in a semiconductor chip.
[Para 26] While the invention has been particularly described in conjunction with a specific preferred embodiment and other alternative embodiments, it is evident that numerous alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. It is therefore intended that the appended claims embrace all such alternatives, modifications and variations as falling within the true scope and spirit of the invention. INDUSTRIAL APPLICABILITY
The invention is useful in the field of semiconductor devices, and more particularly to a method for creation of a semiconductor chip.

Claims

What is claimed is:
1. A method for creating a semiconductor chip, comprising: creating a hole (220) in a semiconductor wafer comprising a plurality of semiconductor chips separated by dicing channels (102), such that the hole (220) is created at an intersection of the dicing channels (102) and through a portion of the semiconductor chip; and, dicing through the dicing channels (102) and the portion of the semiconductor chip at the intersection of the dicing channels (102).
2. A method as in claim 1, the creating step comprising at least one of laser drilling, Bosch process deep drilling, photolithography followed by reactive ion etching, and ion milling.
3. A method as in claim 1, the dicing step comprising at least one of mechanical saw blade dicing and laser dicing.
4. A method as in claim 1, shape of the hole (220) comprising one of a circle, diamond, octagon, and concave shape.
5. A method as in claim 1, the dicing step resulting in a semiconductor chip with an absence of substantially ninety degree corners.
6. A method as in claim 1, the dicing step resulting in a plurality of semiconductor chips with a reduced underfill to hard passivation contact area.
PCT/US2007/087082 2006-12-22 2007-12-11 Semiconductor chip shape alteration WO2008079662A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009543064A JP2010514223A (en) 2006-12-22 2007-12-11 Method for forming semiconductor chip
EP07865500A EP2095419A4 (en) 2006-12-22 2007-12-11 Semiconductor chip shape alteration

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,236 US7648891B2 (en) 2006-12-22 2006-12-22 Semiconductor chip shape alteration
US11/615,236 2006-12-22

Publications (1)

Publication Number Publication Date
WO2008079662A1 true WO2008079662A1 (en) 2008-07-03

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US (2) US7648891B2 (en)
EP (1) EP2095419A4 (en)
JP (1) JP2010514223A (en)
KR (1) KR20090101915A (en)
CN (1) CN101584042A (en)
WO (1) WO2008079662A1 (en)

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US7648891B2 (en) 2010-01-19
US20080150087A1 (en) 2008-06-26
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