WO2008079443A2 - Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same - Google Patents
Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same Download PDFInfo
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- WO2008079443A2 WO2008079443A2 PCT/US2007/073478 US2007073478W WO2008079443A2 WO 2008079443 A2 WO2008079443 A2 WO 2008079443A2 US 2007073478 W US2007073478 W US 2007073478W WO 2008079443 A2 WO2008079443 A2 WO 2008079443A2
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- 239000003381 stabilizer Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 92
- 239000004020 conductor Substances 0.000 title description 28
- 239000002887 superconductor Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 229910000510 noble metal Inorganic materials 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 21
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 4
- 239000012809 cooling fluid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 205
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910002328 LaMnO3 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229960000355 copper sulfate Drugs 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910000856 hastalloy Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000007735 ion beam assisted deposition Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0801—Manufacture or treatment of filaments or composite wires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/933—Sacrificial component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates generally to high temperature superconductors (HTS), and more specifically a novel method for forming a multifilament AC tolerant superconductor with a thick, striated stabilizer, and articles manufactured using the method.
- HTS high temperature superconductors
- HTS wire can carry significantly more current than conventional copper and aluminum conductors of the same physical dimension, and it offers major size, weight, and efficiency benefits.
- HTS superconductors in the power industry include an increase in one to two orders of magnitude of power- handling capacity, significant reduction in the size (i.e., footprint) of electric power equipment, reduced environmental impact, greater safety, and increased capacity over conventional technology.
- HTS technologies can drive down costs and increase the capacity and reliability of electric power systems.
- Developments in HTS wire will offer a powerful tool to improve the performance of power grids while reducing their environmental footprint.
- HTS tapes that can be used to form the various power components.
- the "first generation" of HTS tapes included use of the above-mentioned BSCCO high-T c superconductor, typically embedded in a matrix of noble metal (e.g. Ag). Due to materials and manufacturing costs, however, such tapes do not represent a commercially feasible product for the extended lengths need.
- noble metal e.g. Ag
- “second generation” HTS tapes have been shown to have superior commercial viability.
- These tapes generally are comprised of a layered structure, typically including a flexible substrate that provides mechanical support; at least one buffer layer overlying the substrate; an HTS layer overlying the buffer film; and at least one stabilizer layer, typically formed of a nonnoble metal, overlying the HTS layer.
- a capping layer typically a noble metal layer, is deposited along the entirety of the HTS tape, including its side surfaces, in order to isolate the sensitive HTS layer from reacting with the non- noble stabilizer layer.
- One such second-generation HTS tape utilizes YBCO coated conductor technology.
- the architecture of the coated conductor has not been optimized for AC applications, however, such as motors, generators, and transformers.
- the width and thickness of HTS tapes have a high dimension ratio, which in turn results in HTS coated conductors exhibiting very high hysteretic losses.
- Prior art discloses that magnetization losses can be reduced if the superconducting layer is divided into many parallel superconducting stripes segregated by nonsuperconducting resistive barriers. Therefore, in order to minimize AC hysteretic losses, it is desirable to subdivide the HTS layer of a tape into long thin linear filamentary stripes, or striations.
- HTS tapes are fabricated by first depositing a flexible substrate (12). Next, at least one buffer layer (14) is deposited over the substrate, followed by an HTS layer (18), which overlies the buffer layer. A thin protective capping layer (13), typically formed of a noble metal such as Ag, is then deposited over the HTS layer. Finally, a stabilizer layer (19), typically formed of Cu or other non-noble metal, is deposited on the noble metal capping layer.
- a thicker, more robust stabilizer layer is beneficial because it provides overcurrent protection and quench stability, and it gives better protection to the HTS tape (rather than just a thin layer of Ag) in subsequent steps when the final non- conductive layer is applied.
- the thickness of the stabilizer layer is generally within a range of about 1-1000 microns, and most typically within a range of about 10 to about 400 microns.
- Forming striations through the thick stabilizer layer using known chemical- etching techniques is prohibitively laborious, such that the fabrication of a multifilament HTS tape with a thick stabilizer layer has not yet been possible.
- etching through a thick stabilizer layer in addition to the thin capping layer, before reaching the HTS layer results in much longer period of contact with a particular etching agent.
- a longer etching contact time causes an increase in the degradation of the HTS materials and a loss of superconducting properties due to an increased chemical reaction. Accordingly, it has not been feasible to use state of the art etching techniques in order to form multifilament HTS tapes with thick stabilizers.
- a multifilament AC tolerant superconductor with thick stabilizer comprising : a substrate having a first and second surface opposite each other; a buffer layer overlying the first opposite surface of the substrate; a multifilament superconductor layer overlying the buffer layer; and at least one stabilizer layer overlying the multifilament superconductor layer, wherein the at least one stabilizer layer has a thickness of at least 5.0 microns.
- a method for producing a multifilament AC tolerant superconductor with thick stabilizer comprising the steps of: providing a high temperature superconducting tape, comprising a substrate having first and second major surfaces, at least one buffer layer disposed on the first major surface of the substrate, and a superconducting layer disposed on the buffer layer; performing a pattern transfer step to form a multifilament pattern; depositing at least one stabilizer layer; removing the multifilament pattern to expose portions of the superconducting layer; and etching said exposed portions of the superconducting layer to create at least one groove that extends through the superconducting layer.
- a method for producing a multifilament AC tolerant superconductor with thick stabilizer comprising the steps of: providing a high temperature superconducting tape, characterized by a substrate having first and second major surfaces, at least one buffer layer disposed on the first major surface of the substrate, and a superconducting layer disposed on the buffer layer; depositing a first stabilizer layer on the superconducting layer; performing a pattern transfer step; depositing a second stabilizer layer; removing the residual pattern to expose the first stabilizer layer; and etching the exposed portions of first stabilizer layer and the superconducting layer to create at least one groove that extends through the superconducting layer.
- FIG. IA illustrates a cross-sectional diagram of a coated conductor with a thick stabilizer, as known in the prior art.
- FIGS. IB to FIG. 1C are illustrative drawings showing the successive steps for fabricating a multifilament superconductor tape without a striated stabilizer, as known in the prior art.
- FIG. 2 illustrates a cross-sectional diagram of a novel multifilament AC tolerant conductor with a striated stabilizer, according to an embodiment of the present invention.
- FIGS. 3A to FIG. 3F are illustrative drawings showing successive steps for fabricating a novel multifilament AC tolerant conductor with a striated stabilizer, according to the present invention.
- FIG. 4 illustrates a cross-section of a novel multifilament AC tolerant conductor with a striated thick stabilizer according to another embodiment of the present invention in which the entire superconductive tape is encapsulated by an insulating layer.
- FIG. 5 illustrates a striating process according to an embodiment of the present invention.
- Figures 6A-6B illustrate yet another preferred embodiment according to the present invention wherein the superconducting filaments are encapsulated by at least one stabilizer.
- the use of the same reference symbols in different drawings indicates similar or identical items.
- This invention is directed to a method for forming striated, multifilament HTS coated conductors that are encapsulated with a thick stabilizer layer, and the resulting articles.
- the key step in the fabrication of a striated stabilizer for AC tolerant superconductor is to perform the pattern transfer step, such as photolithography or laser ablation, and then the stabilizer-plating step while the residual, undeveloped photoresist portions still remain on the surface of the HTS tape. After the stabilizer has been deposited, the residual photoresist portions are removed (also known as "lifted-off '), thereby exposing the surface of the underlying HTS tape to facilitate the final etching step and formation of a multifilament HTS tape.
- FIG. 2 is a cross-sectional diagram of an HTS conductor 10 according an embodiment of the present invention having a multi-layer composition.
- HTS conductor 10 is expected to be particularly useful for increasing current carrying capability and reducing AC resistive losses in HTS wires.
- HTS conductor 10 can provide a critical current density (J c ) of at least about 0.5 M A/cm 2 at about 77 K and self-field, and preferably at least about 1 M A/cm 2 .
- HTS conductor 10 includes generally a substrate 12, a buffer layer 14 overlying the substrate 12, an HTS layer 18, followed by a capping layer 13, typically a noble metal layer.
- a stabilizer layer 19 is incorporated, to overlie the superconductor layer 18, and in particular, overlie and directly contact capping layer 13.
- Capping layer 13 and stabilizer layer 19 are generally implemented for electrical stabilization. More particularly, both capping layer 13 and stabilizer layer 19 aid in continued flow of electrical charges along HTS conductor 10 in cases where cooling fails or the critical current density is exceeded, and HTS layer 18 moves from the superconducting state and becomes resistive.
- HTS conductor 10 further includes striations 20, such that HTS layer 18 is divided into multiple filaments.
- FIGS. 3A to FIG. 3F are illustrative drawings showing the successive steps for fabricating a multifilament AC tolerant conductor with striated stabilizer according the present invention.
- a compound oxide superconductor of YBaCuO is used as the oxide superconductor.
- HTS tape 11 is formed.
- HTS tape 11 includes substrate 12, capping layer 13, HTS layer 18, and buffer layer 14.
- this preliminary step is described in detail herein, it is not intended to be limiting, and it should be understood that any method of producing HTS tape 11 generally known in the art can be used. Further, the present invention is not limited to the particular embodiments of HTS tape 11 described herein.
- Substrate 12 provides support for HTS conductor 10 and is generally a metal or polycrystalline ceramic.
- substrate 12 is typically an alloy of at least two metallic elements, such as a Ni-based metal alloy.
- the substrate material will vary according to the intended use of the superconducting article, and is not critical to the invention.
- Substrate 12 can be disposed using any suitable translation process, such as reel-to-reel translation.
- the thickness of the substrate will also vary according to the application.
- Substrate 12 is typically in a tape-like configuration, having a high dimension ratio.
- dimension ratio is used to denote the ratio of the longest dimension (length) of the article to the next longest dimension (width) of the article.
- tape or “tape-like” refers to an article having an dimension ratio not less than about 10 3 .
- the dimension ratio is greater than about 10 4 , and certain embodiments even having an dimension ratio of about 10 5 and higher.
- Substrate 12 can be treated so as to have desirable surface properties for subsequent deposition of the constituent layers of the HTS tape.
- the surface may be lightly polished to a desired flatness and surface roughness.
- the substrate may be treated to be biaxially textured.
- One process for forming a biaxially textured substrate is the process known in the art as RABiTS (roll assisted biaxially textured substrates), generally understood in the art.
- Buffer layer 14 is disposed on substrate surface 12.
- Buffer layer 14 may be a single layer, or more commonly, be made up at least one additional film.
- the buffer layer includes a biaxially textured film suitable for subsequent formation of an HTS layer having desirable crystallographic orientation for superior superconducting properties.
- Such biaxial texturing may be accomplished by ion beam assisted deposition (IBAD), as is understood in the art, and as defined and described in U.S. Pat. No. 6,190,752, which is incorporated herein by reference.
- IBAD ion beam assisted deposition
- MgO is a typical material of choice for the IBAD film, and may be on the order or 50 to 500 Angstroms, such as 50 to 200 Angstroms.
- buffer layer 14 may also include additional films to isolate substrate 12 from the epitaxial film or to reduce a mismatch in lattice constants between HTS lay 18 and the epitaxial film, as is understood in the art. If substrate 12 comprises a biaxially textured surface, buffer layer 14 is generally epitaxially grown on the textured substrate 12 so as to preserve biaxial texturing in buffer layer 14.
- HTS layer 18 generally has a thickness within a range of about 1 to about 30 microns, most typically about 2 to about 20 microns, and preferably about 2 to about 10 microns, in order to get desirable amperage ratings associated with the HTS layer 18.
- HTS layer 18 is typically chosen from any of the high-temperature superconducting materials that exhibit superconducting properties above the temperature of liquid nitrogen, 77 K, and preferably an oxide superconductor.
- One class of materials includes REBa 2 Cu 3 O 7-X where RE is a rare earth element, such as Y, and related compounds.
- Such materials may also include, for example, Bi 2 Sr 2 Ca 2 Cu 3 O 10+y , and HgBa 2 Ca 2 Cu 3 0 8+y.
- YBa 2 Cu 3 O 7-X also generally referred to as YBCO, may be advantageously utilized.
- the manner of deposition of the HTS on the substrate there is no limit in principle to the manner of deposition of the HTS on the substrate and any of the known, commonly used techniques may be employed. Such methods include both thick and thin film forming techniques.
- physical vapor deposition technique such as pulsed laser deposition (PLD) can be used for a high deposition rates, or a chemical vapor deposition technique can be used for lower cost and larger surface area treatment.
- PLD pulsed laser deposition
- a chemical vapor deposition technique can be used for lower cost and larger surface area treatment.
- Alternate methods include evaporation, including coevaporation, e-beam evaporation and activated reactive evaporation; sputtering, including magnetron sputtering, ion beam sputtering and ion assisted sputtering; cathodic arc deposition; organometallic chemical vapor deposition, plasma enhanced chemical vapor deposition, molecular beam epitaxy; a sol-gel process; liquid phase epitaxy and the like.
- a first stabilizer layer, or capping layer, 13 may be deposited on HTS layer 18.
- a noble metal is utilized for capping layer 13 to prevent unwanted interaction between stabilizer layer 19 (shown in Fig. 2) and HTS layer 18.
- Typical noble metals include gold, silver, platinum, and palladium. Silver is more typically used due to its cost and general accessibility.
- Capping layer 13 is preferably thin for cost reasons, but thick enough to prevent unwanted diffusion of the components from stabilizer layer 19 into HTS layer 18. Typical thicknesses of capping layer 13 range within about 0.1 to about 10.0 microns, and more particularly about 1.5 to about 3.0 microns.
- Various techniques may be used for deposition of capping layer 13, including physical vapor deposition and magnetron sputtering method.
- capping layer 13 may overlie one of the two opposite major surfaces of the substrate, both major surfaces, or may completely encapsulate the substrate, buffer layer, and superconductor layer.
- a pattern transfer step is provided in the present invention.
- the actual processes of patterning HTS materials are well known in the art and thus will not be explained in great detail.
- the transfer step of FIG 3 B can be performed using other suitable, known techniques such as laser ablation, imprinting lithography, direct ink writing, screen printing and the like.
- photolithographic techniques are utilized. To the extent photolithography is employed, any suitable photosensitive polymeric material may be used. What is critical to the invention is that the pattern transfer step shown in FIGS 3B-3C is performed prior to both the stabilizer-deposition step (FIG 3D) and liftoff step (FIG 3E).
- a photoresist film is first applied to the major surface of HTS tape 11 that overlies HTS layer 18.
- the photoresist film can be deposited using any convenient coating technique such as spin coating, spray coating or hot-roller lamination to apply photoresist polymer, plastic thin film, or the like, thereby forming mask layer 22 on HTS tape 11.
- the mask layer that is coated must be compatible with the wet etching chemicals that will be used during the subsequent etching of capping layer 13 and HTS layer 18, described in detail herein. For example, as described in Example 1, if alkaline-based solution is to be used to etch silver capping layer, then photoresist polymer should not be used as a mask layer.
- a suitable photomask is used such that the desired filament pattern is transferred to the surface of capping layer 13. More particularly, a suitable photomask is overlaid onto the photoresist to mask selected portions of capping layer 13 (and HTS layer 18) that are to be etched to form the desired multifilament HTS tape. The portions of photoresist layer 22 that are not masked are then developed and stripped. The portions of photoresist layer 22 that were masked, and thus not removed, form residual portions 22a on the surface of HTS tape 11. These residual photoresist portions 22a mask the areas where striations are desired in the underlying capping layer 13 and HTS layer 18, and subsequently will be formed using an etching process, as described herein.
- the width of residual portions 22a can be wider than if the stabilizer layer were required to undergo etching in order to form the desired striations in the HTS layer 18.
- the width of residual portions 22a is generally within a range of 5-100 microns. The ability to create wider residual portions 22a enables one to use more preferable pattern transfer processes, such as dry film resist or plastic film. The wider spaces also allow for reliable wet etching techniques during subsequent steps, described herein.
- secondary stabilizer layer 19 is deposited, as shown in FIG 3D.
- electrochemical deposition techniques such as electroplating, are used to fully coat and encapsulate HTS tape 11 with a suitable, secondary stabilizer to form stabilizer layer 19 on the exposed areas of capping layer 13.
- the areas on capping layer 13 that are masked by residual photoresist portions 22a remain free from any secondary stabilizer material.
- typically stabilizer layer 19 has a thickness within a range of about 1 to about 1,000 microns, most typically within a range of about 10 to about 400 microns, such as about 10 to about 200 microns. Particular embodiments had a nominal thickness within a range of about 20 microns to about 50 microns.
- the entire superconductive tape is encapsulated with stabilizer layer 19, such that stabilizer layer 19 is disposed on opposite major surfaces of the superconductive tape, as well as the side surfaces of the superconductive tape.
- This particular structure further protects HTS layer 18, in the case of cryogenic failure, superconductivity quench, etc.
- the use of electroplating techniques allows for the complete encapsulation of HTS tape 11 with stabilizer layer 19 in one step.
- the invention described herein is not limited to applications that encapsulate HTS tape 11 with stabilizer, but can also be applied to applications wherein stabilizer layer 19 is disposed only on the one major surface that overlies HTS layer 18.
- an electroplating technique defined and described in U.S. Pub. No. 2006/0079403 (Serial No. 11/130,349), which is incorporated herein by reference, is used to form stabilizer layer 19.
- electroplating can be carried out at a high rate of deposition, typically at a rate of about 1 micron per minute or higher, to quickly build-up a thick stabilizer layer 19 on the superconducting tape.
- capping layer 13 functions as a seed layer for deposition of copper, or other metal, thereon.
- stabilizer layer 19 may overlie one of the two opposite major surfaces of the substrate, both major surfaces, or may completely encapsulate the substrate, buffer layer, and superconductor layer.
- residual photoresist portions 22a can be washed off with a photoresist remover, such as acetic-acid based remover specifically formulated to remove acrylic-polymer based photoresist, or other suitable organic solvent.
- a photoresist remover such as acetic-acid based remover specifically formulated to remove acrylic-polymer based photoresist, or other suitable organic solvent.
- FIG 3E when residual photoresist portions 22a are removed, grooves 20a are formed, thereby exposing the underlying capping layer 13 in the areas where the striated pattern is desired.
- FIG 3 F illustrates the final step that results in a multifilament HTS conductor with a thick stabilizer layer.
- Chemical etching is one possible way to configure a desired design in the capping layer and superconducting layer.
- portions of capping layer 13 are exposed through grooves 20a.
- the exposed portions of capping layer 13 are first removed using a chemical etching technique known in the art.
- a chemical etching technique known in the art.
- spray etching or dip etching with potassium iodide / iodine mixture can be used.
- the exposed underlying HTS layer 18 is then removed using an etching technique known in the art, such as wet etching using phosphoric acid or citric acid, in such a manner that grooves 20b are formed.
- the multifilament HTS layer can also be produced by other etching techniques, such as laser ablation.
- pressure spray etching and/or deep trench cleaning are used, as described in Example 1 below, to minimize over-etching the HTS material.
- the grooves, or striations extend through the capping layer 13 and HTS layer 18 such that the desired multifilament pattern is created. Regardless of which technique is used, in a preferred embodiment, the etching process removes the unwanted portions of capping layer 13 and HTS layer 18 in a very short period of time (typically, 30 seconds for the capping layer and 60 seconds for the HTS layer.) to create grooves 20b.
- the portion of grooves 20b that extend through stabilizer layer 19 and capping 13 have sidewalls that are substantially perpendicular and parallel to one another.
- This particular architecture is possible in accordance with the invention disclosed herein because grooves 20a are formed prior to stabilizer deposition and do not require any etching processes. Once grooves 20a are formed, less contact time is needed during the etching process to remove capping layer 13. Previous etching methods have a typical duration of about 40 to 60 minutes in contact with the etching agent, assuming a 20 microns thick stabilizer and capping layer. This long etching time causes a loss of superconducting properties due to the increase chemical reaction.
- grooves 20a the exposed capping layer and HTS layer will be removed at a much higher rate than if the stabilizer layer was in place.
- grooves 20b will be created in a much shorter time and the sidewalls will form substantially perpendicular and parallel to one another.
- an insulator layer 30 can be deposited on multifilament conductor 10 before the latter is passed to the next stages for use as a desired superconducting device.
- the invention is useful for a wide variety of applications, particularly high temperature superconducting wires or tapes which can be used for transmission lines, motors, generators, or high-field magnetic operations.
- FIG. 5 A flow chart of the individual steps which comprise the novel striating process as described hereinabove are illustrated in FIG. 5, according to an embodiment of the present invention.
- the pattern transfer process is formed after depositing capping layer 13
- the above described steps may eliminate depositing capping layer 13 first, such that the photolithography or other pattern transfer process will be used to form photoresist portions directly on HTS layer 18 over the areas where striations are desired.
- the pattern transfer step would then be followed by deposition of at least one stabilizer layer.
- the lift-off steps and etching steps that follow would be the same as described above.
- Fig. ⁇ A and 6B illustrate an alternative, preferred embodiment according to the present invention, wherein each of the individual HTS filaments are fully encapsulated by at least one stabilizer.
- HTS conductor has a dual- sided structure, such that the buffer layer is deposited on both sides of substrate 12, and then the superconducting material is deposited on both sides both of the buffer layers. A capping layer is then deposited on both of the HTS layers in order to encapsulate the HTS material. Photolithography, or other pattern transfer process, is used to form residual photoresist portions over the areas where striations are desired, followed by deposition of a second stabilizer layer to encapsulate the superconducting article. The remaining lift-off steps and etching steps are the same as described above.
- HTS conductor 10 can be incorporated into commercial power components, such as a power cables, power transformers, power generators, and power grids. These additional embodiments are described in more particular detail in U.S. Pub. No. 2006/0079403 (Serial No. 11/130,349), which is incorporated herein by reference.
- Samples were created utilizing the novel striation technique described above.
- samples were provided using 4 mm width of substrate with a thickness of 50 microns.
- the substrate used was a nickel-based alloy (Hastelloy C276).
- a buffer layer stack comprising of alumina, yttria, MgO, and LaMnO3 were deposited to a total thickness of 160 nm.
- MOCVD Metalorganic Chemical Vapor Deposition
- samples were then subjected to magnetron sputtering of silver to form 3 -micron thick capping layers.
- a layer of dry film photoresist was coated, such that a known photolithographic technique, i.e. broad band UV exposure and photoresist developing, could be used to transfer the desired striation pattern.
- Those samples were placed in a copper-sulfate solution and biased such that the capping layers formed a cathode, the anode being a copper plate.
- Electroplating was carried out to form a copper layer having a nominal thickness of about 20 microns. The copper layer functions as a thick stabilizer.
- the remaining photoresist was washed off with photoresist remover.
- samples were subjected to silver etching in the potions not covered by copper.
- Spray etching or dip etching with potassium iodide / iodine solution can be used.
- the exposed underlying HTS layer was then removed using an etchant such as 0.2 M citric acid, in such a manner to form grooves through thick copper stabilizer, silver layer and HTS layer.
- an etchant such as 0.2 M citric acid
- Samples were created utilizing the novel striation technique described above.
- samples were provided using 4 mm width of substrate with a thickness of 50 microns.
- the substrate used was a nickel-based alloy (Hastelloy C276).
- a buffer layer stack comprising of alumina, yttria, MgO, and LaMnO3 were deposited to a total thickness of 160 nm.
- MOCVD Metalorganic Chemical Vapor Deposition
- samples were then subjected to magnetron sputtering of silver to form 3-micron thick capping layers.
- a polyimide film was laminated, such that a known laser ablation technique, i.e. using 308 nm or 248 nm excimer laser, could be used to transfer the desired striation pattern in a single step.
- Those samples were placed in a copper-sulfate solution and biased such that the capping layers formed a cathode, the anode being a copper plate.
- Electroplating was carried out to form a copper layer having a nominal thickness of about 20 microns. The copper layer functions as a thick stabilizer.
- the un-ablated strips of the polyimide film were peeled off.
- samples were subjected to silver etching in the portions not covered by copper.
- Samples were created utilizing the novel striation technique described above.
- samples were provided using 4 mm width of substrate with a thickness of 50 microns.
- the substrate used was a nickel-based alloy (Hastelloy C276).
- a buffer layer stack comprising of alumina, yttria, MgO, and LaMnO3 were deposited to a total thickness of 160 ran,
- MOCVD Metalorganic Chemical Vapor Deposition
- MOCVD Metalorganic Chemical Vapor Deposition
- a 30-micron thick layer of dry film photoresist was coated, such that a known photolithographic technique, i.e.
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CA2657445A CA2657445C (en) | 2006-07-14 | 2007-07-13 | Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same |
KR1020097002874A KR101328883B1 (en) | 2006-07-14 | 2007-07-13 | Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same |
JP2009520921A JP5578467B2 (en) | 2006-07-14 | 2007-07-13 | Method for forming a multifilament AC-resistant conductor having a line stabilizer, articles associated therewith, and apparatus incorporating the same |
EP07872247.7A EP2047528B1 (en) | 2006-07-14 | 2007-07-13 | Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same |
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KR20090034971A (en) | 2009-04-08 |
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