WO2008078898A1 - High frequency module and manufacturing method thereof - Google Patents

High frequency module and manufacturing method thereof Download PDF

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Publication number
WO2008078898A1
WO2008078898A1 PCT/KR2007/006615 KR2007006615W WO2008078898A1 WO 2008078898 A1 WO2008078898 A1 WO 2008078898A1 KR 2007006615 W KR2007006615 W KR 2007006615W WO 2008078898 A1 WO2008078898 A1 WO 2008078898A1
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WO
WIPO (PCT)
Prior art keywords
flie
board
filter chip
high frequency
frequency module
Prior art date
Application number
PCT/KR2007/006615
Other languages
French (fr)
Inventor
Kyung Joo Son
Original Assignee
Lg Innotek Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060132295A external-priority patent/KR20080058535A/en
Priority claimed from KR1020060132296A external-priority patent/KR20080058536A/en
Priority claimed from KR1020060133274A external-priority patent/KR20080058984A/en
Priority claimed from KR1020070009660A external-priority patent/KR101349544B1/en
Priority claimed from KR1020070009659A external-priority patent/KR20080071432A/en
Application filed by Lg Innotek Co., Ltd filed Critical Lg Innotek Co., Ltd
Publication of WO2008078898A1 publication Critical patent/WO2008078898A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
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    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/81951—Forming additional members, e.g. for reinforcing
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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Definitions

  • Embodiments relate to a high frequency module and a manufacturing method thereof.
  • a frequency filter device passing only a desired frequency of plurality of frequency components and attenuates the rest of the frequencies input from the outside is provided to the wireless communication terminal.
  • the frequency filter device which is a crucial part of a communication apparatus, tends to develop in the directions of a high frequency, miniaturization, and a reduced bandwidth
  • Embodiments provide a high frequency module that can seal an air cavity of a filter chip using a resin material, and a manufacturing method thereof.
  • Embodiments provide a high frequency module that can seal an air cavity of a filter chip using a sealing material of a double structure, and a manufacturing method thereof.
  • Embodiments provide a high frequency module that can form a cavity of a predetermined depth in a board, and seal an air cavity of a filter chip using a resin material inside the cavity, and a manufacturing method thereof.
  • Embodiments provide a high frequency module Ihat packages a filter chip on a board or packages the filter chip and other chip part, and a manufacturing method thereof.
  • An embodiment provides a high frequency module, comprising: a board comprising a pattern; a filter chip forming an air cavity on the board; a first sealing portion sealing a periphery of the filter chip on the board; and a mold member on the board.
  • An embodiment provides a high frequency module, comprising: a board comprising a pattern; a chip part on the board; a filter chip forming an air cavity on the board; a first sealing portion sealing a periphery of the filter chip on the board; and a mold member on the board.
  • An embodiment provides a method for manufacturing a high frequency module, comprising: bonding a filter chip on a board; forming a first sealing portion around the filter chip to seal an air cavity formed under the filter chip; and forming a mold member on the board.
  • a high frequency module and a manufacturing method thereof according to an embodiment can reduce the thickness of a filter chip package to miniaturize the high frequency module.
  • a filter chip is sealed in a single structure or a double structure, so that reliability of a filter chip can increase.
  • a semiconductor module package applied to a communication apparatus such as a cellular phone and a headset can be realized in an slim profile.
  • FIG. 1 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a first embodiment.
  • FIGs. 2 to 5 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the first embodiment.
  • FIG. 6 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a second embodiment.
  • Fig. 7 is a partial enlarged view of the portion A of Fig. 6.
  • Fig. 8 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a third embodiment.
  • Fig. 9 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a fourth embodiment.
  • Figs. 10 to 16 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the fourth embodiment.
  • Fig. 17 is a cross-sectional view of a high frequency module having a filter chip according to a fifth embodiment.
  • Figs. 18 to 21 are views illustrating a process of manufacturing a high frequency module having a filter chip according to the fifth embodiment.
  • Fig. 22 is a cross-sectional view of a high frequency module having a filter chip according to a sixth embodiment.
  • Fig. 23 is a cross-sectional view of a high frequency module having a filter chip according to a seventh embodiment.
  • Fig. 1 is a cross-sectional view illustrating the structure of a filter chip package of a high frequency module according to the first embodiment.
  • the filter chip package 100 includes a board 110, a filter chip
  • the board 110 can comprise a ceramic board such as a high temperature co-fired ceramic (HTCC) and a low temperature co-fired ceramic (LTCC), a silicon board, a metal core printed circuit board (MCPCB), and a PCB, but the board 110 is not limited thereto.
  • a pattern designed in advance is formed on the board 110.
  • An electrode pattern 112 of the pattern is electically connected to other layer or a bottom layer trough a via, a via hole 114, and a through hole.
  • a metal bump 122 is formed on the electrode pattern 112.
  • the metal bump 122 is formed at a position corresponding to a bonding electrode 121 of a filter chip 120.
  • the metal bump 122 has a height equal to or greater than 20 ⁇ m to secure a space from a board surface.
  • the bonding electrode 121 of the filter chip 120 is flip-bonded on the metal bump
  • This flip bonding method can comprise a method of forming an
  • the flip bonding method can be performed in various methods within the scope of the technical field thereof, and is not limited to the above-described bonding structure.
  • the metal bump 122 can be formed using electroplating or by screen-printing solder. Also, the metal bump 122 can be formed of Au or a material comprising an Au alloy containing Au to match with the bonding electrode 121 of the filter chip 120. The metal bump 122 can be formed in a composition ratio having a melting point (e.g., 100-150 0 C) that allows heat treatment to be performed without damage to the filter chip 120. Also, the metal bump 122 can be formed in one or more layers using one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
  • An air cavity 118 is formed under the filter chip 120.
  • the height of the air cavity 118 can be equal to a distance between the filter chip 120 and the board 110, or the height of the metal bump 122.
  • the bonding electrode 121 of the filter chip 120 comprises an input terminal and an output terminal.
  • This filter chip 120 is a bare chip and can be realized in one of a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, and a film bulk acoustic resonator (FBAR) filter.
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • FBAR film bulk acoustic resonator
  • the sealing portion 125 seals the periphery of the filter chip 120.
  • the sealing portion 125 seals a space between the periphery of the filter chip 120 and the board 110 in a dam shape or a closed loop shape. Accordingly, the air cavity 118 formed under the filter chip 120 becomes an airtight space.
  • the sealing portion 125 can be formed of a material of high viscosity, for example, an epoxy resin or a silicon resin. The sealing portion 125 of high viscosity seals the air cavity 118 of the filter chip 120 and prevents moisture penetration from the outside.
  • a mold member 130 is formed on the board 110.
  • the mold member 130 has a predetermined height to protect the filter chip 120 disposed on the board 110.
  • the mold member 130 is higher than the filter chip 120.
  • the mold member 130 can be formed of one of epoxy molding compound, poly phenylene oxide, epoxy sheet molding (ESM), and silicon.
  • an electron shielding plated layer (not shown) can be formed on the surface of the mold member 130. This plated layer blocks harmful electromagnetic waves propagating to or emitted from the filter chip.
  • FIGs. 2 to 5 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the first embodiment.
  • the electrode pattern 112 is formed on the board 110.
  • the electrode pattern 112 is disposed with consideration of a chip mounting region, and se- lectively connected to other layer through a via, a via hole 114, and a through hole.
  • the metal bump 122 is formed on the electrode pattern 112.
  • the metal bump 122 has such a height as to secure the air cavity 118 under the filter chip 120. At this point, an airtight space is not formed in the air cavity 118.
  • the bonding electrode 121 of the filter chip 120 is bonded on the metal bump 122 using a flip method. Accordingly, the bonding electrode 121 of the filter chip 120 can be connected to an external terminal through the metal bump 122, the electrode pattern 112, and tie via hole 114.
  • the sealing portion 125 is formed in a dam shape on the outer periphery of the filter chip 120.
  • the sealing portion 125 seals the air cavity 118 under the filter chip 120.
  • the sealing portion 125 is formed by dispensing a resin material of high viscosity, for example, an epoxy resin or a silicon resin along the periphery of the filter chip 120 using a dispenser. At this point, the sealing portion 125 of high viscosity seals the air cavity 118 of the filter chip 120 and prevents moisture penetration from the outside.
  • a resin material of high viscosity for example, an epoxy resin or a silicon resin
  • the mold member 130 is formed on the board 110.
  • the mold member 130 is formed to a predetermined thickness to protect a portion exposed on the board 110. That is, the mold member 130 is formed to the predetermined thickness at the outer sides of the filter chip 120 and the sealing portion 125 on the board 110 to protect a circuit pattern of the board 110 or the filter chip 120.
  • the mold member 130 can be formed using, for example, transfer molding using an epoxy mold compound, a molding method of thermally pressurizing an epoxy sheet, a method of discharging a liquid molding material and performing heat treatment, and injection molding. Also, a plated layer (not shown) can be formed on the mold member 130. The plated layer can be formed by selectively using sputtering, evaporating, electroplating, and electroless plating.
  • the board 110 is diced in a single package size.
  • the board 110 is diced in a package size on which an individual chip 120 is mounted, or fully cut to manufacture the filter chip package 100.
  • Fig. 6 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the second embodiment
  • Fig. 7 is a partial enlarged view of the portion A of Fig. 6. Descriptions of the same elements as those of the first embodiment are omitted in describing the second embodiment.
  • the filter chip package 200 comprises a board 210, a second sealing portion 216, a filter diip 220, a first sealing portion 225, and a mold member 230.
  • the filter chip package 200 seals an air cavity 218 of the filter chip 220 using a double structure formed by the sealing portions 216 and 225.
  • An electrode pattern 212 and a fixing pattern 213 are formed on a region on which the filter chip 220 of the board 210 is to be mounted.
  • the electrode pattern 212 is formed at a position corresponding to a bonding electrode 221 of the filter chip 220.
  • the fixing pattern 213 is formed outside the electrode pattern 212 under the filter chip 220.
  • the fixing pattern 213 is formed in a polygonal frame such as a quadrangular frame or a circular frame on the board 210.
  • a metal bump 222 is formed on the electrode pattern 212.
  • the second sealing portion 216 is formed on the fixing pattern 213.
  • the second sealing portion 216 is formed in a wall shape using metal.
  • the wall can have a height substantially equal to that of the air cavity 218.
  • the metal bump 222 and the second sealing portion 216 can be formed of Au or a material comprising an Au alloy containing Au to match with the patterns 212 and 213. Also, the metal bump 222 and the second sealing portion 216 can comprise at least one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
  • the second sealing portion 216 can be formed by performing electroplating on the fixing pattern 213 or by screen-printing solder on the fixing pattern 213.
  • the second sealing portion 216 can be connected to a ground pattern.
  • the second sealing portion 216 can be formed by attaching a metal bar on the fixing pattern, or be formed of a resin such as epoxy and silicon.
  • the metal bump 222 can have a thickness of 20 ⁇ m or more.
  • the second sealing portion 216 can have a thickness substantially equal to a distance between the filter chip 220 and the board 210, for example, a thickness of 20 ⁇ m or more.
  • the filter chip 220 is bonded on the metal bump 222 using a flip method.
  • the second sealing portion 216 is disposed under the filter chip 220.
  • the first sealing portion 225 is formed in a dam shape surrounding the filter chip
  • the first sealing portion 225 is dispensed using a resin of high viscosity such as epoxy and silicon.
  • the first sealing portion 225 is formed around the filter chip 220 outside the second sealing portion 216 to make the air cavity 218 an airtight space. That is, the double structure formed by the sealing portions 216 and 225 makes the airtight space of the air cavity 218 formed under the filter chip 220 and prevents moistures from penetrating into the air cavity 218.
  • the second sealing portion 216 can minimize inflow of a resin material caused by a pressure difference between the airtight space of the air cavity 218 and an external space while the first sealing portion 225 is formed.
  • the mold member 230 is formed to protect the filter chip 220 on the board 210.
  • an electron shielding plated layer (not shown) can be formed on the surface of the mold member 230. This plated layer blocks harmful electromagnetic waves propagating to or emitted from the filter chip.
  • FIG. 8 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the third embodiment. Descriptions of the same elements as those of the first embodiment are omitted in describing the third embodiment.
  • the filter chip package 300 comprises a board 310, a filter chip
  • a cavity 316 is formed to a predetermined depth in the board 310 of the filter chip package 300.
  • the cavity 316 has a size that can accommodate a portion of the individual filter chip 320.
  • the cavity 316 can be formed to a depth corresponding to one third of the thickness of the board or 30-80% of the thickness of fee filter chip 320.
  • An electrode pattern 312 is formed on the cavity 316 of the board 310.
  • a bonding electrode 321 of the filter chip 320 is bonded on the metal bump 322 using a flip method.
  • the sealing portion 325 seals the lateral side of the filter chip 320 partially accommodated in the cavity 316. That is, the sealing portion 325 is seals a space between the lateral side of the filter chip 320 and the cavity 316, so that the air cavity 318 under the filter chip 320 becomes an airtight space and blocks moisture penetration.
  • the mold member 330 is formed on the board 310.
  • a plated layer (not shown) can be formed on the surface of the mold member 330.
  • the plated layer can be grounded to the board.
  • FIG. 9 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the fourth embodiment. Descriptions of the same elements as those of the first embodiment are briefly made or omitted in describing the fourth embodiment.
  • the filter chip package 400 comprises a board 410, a filter chip
  • An electrode pattern 412 and a ground pattern 413 are formed on flie board 410.
  • a metal bump 422 is formed on flie electrode pattern 412.
  • a bonding electrode 421 of flie filter chip 420 is flip-bonded on flie metal bump 422.
  • the ground portion 416 is formed on flie ground pattern 413.
  • the ground portion 416 is separated from flie package.
  • the ground portion 416 can be formed of Au or a material comprising an Au alloy containing Au, or can be one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
  • the height of flie ground portion 416 can be equal to 50 ⁇ m or more from flie board surface, or can be determined wifli consideration of flie thickness of flie filter chip.
  • the sealing portion 425 is formed on flie board 410 and around flie filter chip 420 to make an air cavity 418 formed under flie filter chip 420 an airtight space.
  • flie plated layer 440 is formed on flie surface of flie mold member 430. BoIh ends of flie plated layer 440 are connected to flie ground portions 416 on flie board 410 to block EMI/EMC phenomenon of flie filter chip package 400.
  • flie plated layer 440 can be formed using sputtering, evaporating, electroplating, or electroless plating. Also, flie plated layer 440 can be formed of one or more metal layers wifli consideration of a bonding characteristic wifli flie mold member 430 and solidity of a plated body. For example, one or more layers formed of Cu, Ti, Ni, and Au, a conductive material, or a combination thereof can be stacked on flie surface of flie mold member 430. At this point, flie plated layer 440 can be stacked on flie surface of flie mold member 430 in a sequence of Cu layer/Ni layer/ Au layer.
  • Figs. 10 to 16 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to flie fourth embodiment.
  • circuit patterns such as flie electrode pattern 412 and flie ground pattern 413 are formed on flie board 410.
  • the metal bump 422 is formed on flie electrode pattern 412.
  • the ground portion 416 is formed on flie ground pattern 413.
  • flie ground portion 416 is formed in a wall having a predetermined height (e.g., 50 ⁇ m or more) apart a predetermined distance from flie electrode pattern 412.
  • the ground portion 416 and flie metal bump 422 can be formed of a material comprising Au or an Au alloy containing Au using electroplating or electroless plating, or by screen-printing solder.
  • flie metal bump 422 and flie ground portion 416 can be formed of one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
  • flie bonding electrode 421 of flie filter diip 420 is flip-bonded on flie metal bump 422 of flie board 410.
  • flie ground portion 416 is separated from flie filter diip 420 by a predetermined distance Gl.
  • a sealing portion 425 is formed in a dam shape around flie filter chip 420.
  • the sealing portion 425 is dispensed along flie outer edges of flie filter chip 420 using a liquid resin material.
  • flie sealing portion 425 makes flie air cavity 418 of flie filter chip 420 flie airtight space and prevents moisture penetration from flie outside.
  • ground portion 416 prevents flie sealing portion 425 from spreading when flie liquid resin material, which is a material of flie sealing portion 425, is dispensed.
  • flie mold member 430 is formed on flie board 410.
  • the mold member 430 is formed to a predetermined height to protect flie filter chip 420.
  • a region Tl excluding a unit package size on flie board 410 is half-diced.
  • the half-dicing process cuts up to a predetermined portion of flie board 410 corresponding to flie region Tl excluding flie unit package size, for example, a surface of flie board or up to a deeper layer than flie surface of flie board.
  • a portion of flie ground portion 416 is exposed to flie outside.
  • flie plated layer 440 is formed on flie board 410.
  • the plated layer 440 is formed on flie exposed surface of flie board 410 and flie surface of flie mold member 430.
  • flie plated layer 440 can be formed using sputtering, evaporating, electroplating, or electroless plating.
  • flie plated layer 440 can be formed of one or more metal layers wifli consideration of a bonding characteristic wifli flie mold member 430 and solidity of a plated body.
  • one or more layers formed of Cu, Ti, Ni, and Au, a conductive material, or a combination thereof can be stacked on flie surface of flie mold member 430.
  • the plated layer 440 can be stacked on flie surface of flie mold member 430 in a sequence of Cu layer/Ni layer/ Au layer.
  • flie ground portion 416 formed on flie board is electrically connected to bofli ends of flie plated layer 440, so that flie plated layer 440 is grounded to form a structure blocking EMI/EMC phenomenon of flie filter chip 420.
  • flie board 410 is cut in a unit package size. At Ms point, flie board 410 is fully diced in flie unit package size having flie filter chip 420, so Ihat flie filter chip package 400 is completed.
  • the fourth embodiment provides flie filter chip 420 having flie air cavity 418 on flie board 410, protects flie chip using flie mold member 43, and allows flie plated layer 440 for shielding electromagnetic waves to be grounded to flie ground portion 416, thereby blocking harmful electromagnetic waves while protecting parts.
  • FIG. 17 is a cross-sectional view of a high frequency module having a filter chip according to flie fifth embodiment. Descriptions of flie same elements as those of the first embodiment are briefly made in describing the fifth embodiment.
  • the high frequency module 500 comprises a board 510, a chip part 527, a filter chip 520, a sealing portion 525, and a mold member 530.
  • the board 510 comprises a ceramic board such as an HTCC and an LTCC, a silicon board, an MCPCB, and a general PCB.
  • a first electrode pattern 511 and a second electrode pattern 512 designed in advance on the board 510 are electrically connected to other layer or a bottom layer through a via, a via hole 514, and a through hole.
  • the chip part 527 comprises at least one of a ceramic capacitor, a chip inductor, and a chip switch, and is bonded on solder 523 of the first electrode pattern 511 using surface mount technology (SMT).
  • SMT surface mount technology
  • a metal bump 522 is formed on the second electrode pattern 512.
  • a bonding electrode 521 of the filter chip 520 is flip-bonded on the metal bump 522.
  • the filter chip 520 is a bare chip and can be realized in one or more of a SAW filter, a BAW filter, and an FBAR filter.
  • the sealing portion 525 is formed in a dam shape along the periphery of the filter chip 520 and makes an air cavity 518 of the filter chip 520 an airtight space.
  • a structure sealing the air cavity 518 formed under the filter chip 520 in the fifth embodiment can refer to the first embodiment illustrated in Fig. 1.
  • the mold member 530 is formed to a predetermined height to protect the chip part
  • the mold member 530 can be formed using one of epoxy molding compound, poly phenylene oxide, ESM, and silicon. Also, an electron shielding plated layer (not shown) can be formed on the surface of the mold member 530.
  • This high frequency module 500 is manufactured in the form of an SIP(System In
  • Figs. 18 to 21 are views illustrating a process of manufacturing a high frequency module having a filter chip according to the fifth embodiment.
  • one or more chip parts 527 are bonded on the first electrode pattern 511 on the board 510 using SMT using solder 523.
  • the metal bump 522 is formed on the second electrode pattern 512 of the board 510.
  • the bonding electrode 521 of the filter chip 520 is flip-bonded on the metal bump 522. At this point, the air cavity 518 of the filter chip 520 is not airtight.
  • the sealing portion 525 is formed around the filter chip 520.
  • the sealing portion 525 is formed in a dam shape around the filter chip 520 to make the air cavity 518 of the filter chip 520 an airtight space.
  • the mold member 530 is formed on the board 510.
  • the mold member 530 has a height equal to or greater than the height of the chip part to protect the chip part 527 and the filter chip 520.
  • the mold member 530 can be formed using transfer molding using an epoxy mold compound, a molding method of thermally pressurizing an epoxy sheet, a method of discharging a liquid molding material and performing heat treatment, and/or injection molding. Also, a plated layer (not shown) can be formed on the mold member 530.
  • Fig. 22 is a cross-sectional view of a high frequency module having a filter chip according to the sixth embodiment. Descriptions of the same elements as those of the previous embodiments are briefly made or omitted in describing the sixth embodiment.
  • the high frequency module 600 comprises a board 610, a second sealing portion 616, a chip part 627, a filter chip 620, a first sealing portion 625, and a mold member 630.
  • the second sealing portion 616 is formed on the board 610 under the filter chip 620.
  • the second sealing portion 616 is formed in a polygonal frame shape or a circular frame shape on a fixing pattern 613.
  • the second sealing portion 616 can be formed of Au or a material comprising an Au alloy containing Au.
  • the second sealing portion 616 can be formed of one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
  • the second sealing portion 616 prevents inflow of the first sealing portion 625 into an air cavity 618 of the filter chip 620 while the first sealing portion 625 is dispensed.
  • the first sealing portion 625 is formed in a dam shape along the filter chip 620 to make the air cavity 618 formed under the filter chip 620 an airtight space.
  • a structure sealing the air cavity 618 formed under the filter chip 620 in the sixth embodiment can refer to the second embodiment illustrated in Fig. 6.
  • the air cavity 618 of the filter chip 620 becomes an airtight space through a double structure of the sealing portions 616 and 625 and can prevent moisture penetration from the outside.
  • the mold member 630 is formed to a predetermined height on the board 610.
  • the mold member 630 protects the chip part 627 and the filter chip 620 on the board 610.
  • Fig. 23 is a cross-sectional view of a high frequency module having a filter chip according to the seventh embodiment. Descriptions of the same elements as those of the previous embodiment are omitted in describing the seventh embodiment.
  • the high frequency module 700 comprises a board 710 having an cavity 716, chip parts 727, a filter chip 720, a sealing portion 725, and a mold member 730.
  • the cavity 716 is formed on the board 710.
  • the chip parts 727 on the board 710 are bonded on solder through SMT.
  • a bonding electrode 721 of the filter chip 720 formed on an electrode pattern 712 inside the cavity 716 is flip-bonded on a metal bump 722.
  • the cavity 716 has a size that can accommodate a portion of the filter chip 720, and has a depth corresponding to one third of the entire thickness of the board, or one third to two third of the thickness of the filter chip 720.
  • the sealing portion 725 seals a space between the filter chip 720 and the air cavity 716. At Ms point, the sealing portion 725 can make the air cavity 718 of the filter chip 720 an airtight space and prevent moisture penetration from the outside.
  • a structure sealing the air cavity 718 formed under the filter chip 720 in the seventh embodiment can refer to the third embodiment illustrated in Fig. 8.
  • the mold member 730 is formed to protect the chip parts 727 and the filter chip 720 on the board 710.
  • This high frequency module is manufactured in the form of an SIP product having the chip part such as a passive device, and the high frequency filter chip as a package. Also, a semiconductor module package applied to an apparatus such as a cellular phone and a headset can be realized in an ultra slim profile. The high frequency module can be applied to various package types such as an MCP and an SIP.
  • the high frequency module and the manufacturing method thereof according to the embodiments can reduce the thickness of the filter chip package to miniaturize the high frequency module.
  • the filter chip is sealed using a single structure or a double structure, so that reliability of the filter chip increases.
  • a high frequency module can be integrated at high density.
  • a semiconductor module package applied to a cellular phone or a headset can be realized in an ultra slim profile.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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Abstract

Provided are a high frequency module and a manufacturing method thereof. The high frequency module comprises a board comprising a pattern, a filter chip, a sealing portion, and a mold member. An air cavity is formed under the filter chip. The filter chip is bonded on the board. The sealing portion seals the periphery of the filter chip on the board through a single sealing structure or a double sealing structure. The mold member is formed on the board.

Description

Description
HIGH FREQUENCY MODULE AND MANUFACTURING
METHOD THEREOF
Technical Field
[1] Embodiments relate to a high frequency module and a manufacturing method thereof. Background Art
[2] With recent trends of multi-function and miniaturization in wireless communication terminals such as personal digital assistants (PDAs), smart phones, digital multimedia broadcasting (DMB) terminals, various parts mounted within these terminals are developed in a small size.
[3] A frequency filter device passing only a desired frequency of plurality of frequency components and attenuates the rest of the frequencies input from the outside is provided to the wireless communication terminal. The frequency filter device, which is a crucial part of a communication apparatus, tends to develop in the directions of a high frequency, miniaturization, and a reduced bandwidth
[4] To realize a lightweight and slim profile and miniaturization in these parts, technology for reducing individual sizes of mounted parts, system on chip (SOC) technology for making a plurality of individual devices in the form of one chip, and system in package (SIP) technology for integrating a plurality of individual devices in the form of one package are required. That is, researches for realizing various parts mounted within a terminal or passive devices, active devices, and high frequency filer chips mounted within a handset apparatus cooperating with the terminal in the form of one package are under development. Disclosure of Invention Technical Problem
[5] Embodiments provide a high frequency module that can seal an air cavity of a filter chip using a resin material, and a manufacturing method thereof.
[6] Embodiments provide a high frequency module that can seal an air cavity of a filter chip using a sealing material of a double structure, and a manufacturing method thereof.
[7] Embodiments provide a high frequency module that can form a cavity of a predetermined depth in a board, and seal an air cavity of a filter chip using a resin material inside the cavity, and a manufacturing method thereof. [8] Embodiments provide a high frequency module Ihat packages a filter chip on a board or packages the filter chip and other chip part, and a manufacturing method thereof.
Technical Solution [9] An embodiment provides a high frequency module, comprising: a board comprising a pattern; a filter chip forming an air cavity on the board; a first sealing portion sealing a periphery of the filter chip on the board; and a mold member on the board. [10] An embodiment provides a high frequency module, comprising: a board comprising a pattern; a chip part on the board; a filter chip forming an air cavity on the board; a first sealing portion sealing a periphery of the filter chip on the board; and a mold member on the board. [11] An embodiment provides a method for manufacturing a high frequency module, comprising: bonding a filter chip on a board; forming a first sealing portion around the filter chip to seal an air cavity formed under the filter chip; and forming a mold member on the board.
Advantageous Effects
[12] A high frequency module and a manufacturing method thereof according to an embodiment can reduce the thickness of a filter chip package to miniaturize the high frequency module.
[13] Also, a filter chip is sealed in a single structure or a double structure, so that reliability of a filter chip can increase.
[14] Also, harmful electromagnetic waves can be effectively blocked.
[15] Also, a semiconductor module package applied to a communication apparatus such as a cellular phone and a headset can be realized in an slim profile. Brief Description of the Drawings
[16] Fig. 1 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a first embodiment.
[17] Figs. 2 to 5 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the first embodiment.
[18] Fig. 6 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a second embodiment.
[19] Fig. 7 is a partial enlarged view of the portion A of Fig. 6.
[20] Fig. 8 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a third embodiment. [21] Fig. 9 is a cross-sectional view illustrating a filter chip package of a high frequency module according to a fourth embodiment. [22] Figs. 10 to 16 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the fourth embodiment. [23] Fig. 17 is a cross-sectional view of a high frequency module having a filter chip according to a fifth embodiment. [24] Figs. 18 to 21 are views illustrating a process of manufacturing a high frequency module having a filter chip according to the fifth embodiment. [25] Fig. 22 is a cross-sectional view of a high frequency module having a filter chip according to a sixth embodiment. [26] Fig. 23 is a cross-sectional view of a high frequency module having a filter chip according to a seventh embodiment.
Best Mode for Carrying Out the Invention [27] Hereinafter, a high frequency module and a manufacturing method according to the embodiment will be described with reference to accompanying drawings. [28] First embodiment
[29] Fig. 1 is a cross-sectional view illustrating the structure of a filter chip package of a high frequency module according to the first embodiment. [30] Referring to Fig. 1, the filter chip package 100 includes a board 110, a filter chip
120, a sealing portion 125, and a mold member 130. [31] The board 110 can comprise a ceramic board such as a high temperature co-fired ceramic (HTCC) and a low temperature co-fired ceramic (LTCC), a silicon board, a metal core printed circuit board (MCPCB), and a PCB, but the board 110 is not limited thereto. [32] A pattern designed in advance is formed on the board 110. An electrode pattern 112 of the pattern is electically connected to other layer or a bottom layer trough a via, a via hole 114, and a through hole. [33] A metal bump 122 is formed on the electrode pattern 112. The metal bump 122 is formed at a position corresponding to a bonding electrode 121 of a filter chip 120. The metal bump 122 has a height equal to or greater than 20 μm to secure a space from a board surface. [34] The bonding electrode 121 of the filter chip 120 is flip-bonded on the metal bump
122 of the board 110. This flip bonding method can comprise a method of forming an
Au stud bump on the filter chip 120 and bonding using ultrasonic waves, and a method of forming a solder bump on a board and performing thermal fusion bonding. Also, the flip bonding method can be performed in various methods within the scope of the technical field thereof, and is not limited to the above-described bonding structure.
[35] Here, the metal bump 122 can be formed using electroplating or by screen-printing solder. Also, the metal bump 122 can be formed of Au or a material comprising an Au alloy containing Au to match with the bonding electrode 121 of the filter chip 120. The metal bump 122 can be formed in a composition ratio having a melting point (e.g., 100-1500C) that allows heat treatment to be performed without damage to the filter chip 120. Also, the metal bump 122 can be formed in one or more layers using one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
[36] An air cavity 118 is formed under the filter chip 120. The height of the air cavity 118 can be equal to a distance between the filter chip 120 and the board 110, or the height of the metal bump 122.
[37] The bonding electrode 121 of the filter chip 120 comprises an input terminal and an output terminal. This filter chip 120 is a bare chip and can be realized in one of a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, and a film bulk acoustic resonator (FBAR) filter.
[38] The sealing portion 125 seals the periphery of the filter chip 120. The sealing portion
125 seals a space between the periphery of the filter chip 120 and the board 110 in a dam shape or a closed loop shape. Accordingly, the air cavity 118 formed under the filter chip 120 becomes an airtight space. Here, the sealing portion 125 can be formed of a material of high viscosity, for example, an epoxy resin or a silicon resin. The sealing portion 125 of high viscosity seals the air cavity 118 of the filter chip 120 and prevents moisture penetration from the outside.
[39] A mold member 130 is formed on the board 110. The mold member 130 has a predetermined height to protect the filter chip 120 disposed on the board 110. Here, the mold member 130 is higher than the filter chip 120. The mold member 130 can be formed of one of epoxy molding compound, poly phenylene oxide, epoxy sheet molding (ESM), and silicon.
[40] Also, an electron shielding plated layer (not shown) can be formed on the surface of the mold member 130. This plated layer blocks harmful electromagnetic waves propagating to or emitted from the filter chip.
[41] Figs. 2 to 5 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to the first embodiment.
[42] Referring to Fig. 2, the electrode pattern 112 is formed on the board 110. The electrode pattern 112 is disposed with consideration of a chip mounting region, and se- lectively connected to other layer through a via, a via hole 114, and a through hole.
[43] The metal bump 122 is formed on the electrode pattern 112. The metal bump 122 has such a height as to secure the air cavity 118 under the filter chip 120. At this point, an airtight space is not formed in the air cavity 118.
[44] The bonding electrode 121 of the filter chip 120 is bonded on the metal bump 122 using a flip method. Accordingly, the bonding electrode 121 of the filter chip 120 can be connected to an external terminal through the metal bump 122, the electrode pattern 112, and tie via hole 114.
[45] Referring to Fig. 3, the sealing portion 125 is formed in a dam shape on the outer periphery of the filter chip 120. The sealing portion 125 seals the air cavity 118 under the filter chip 120.
[46] The sealing portion 125 is formed by dispensing a resin material of high viscosity, for example, an epoxy resin or a silicon resin along the periphery of the filter chip 120 using a dispenser. At this point, the sealing portion 125 of high viscosity seals the air cavity 118 of the filter chip 120 and prevents moisture penetration from the outside.
[47] Referring to Fig. 4, the mold member 130 is formed on the board 110. The mold member 130 is formed to a predetermined thickness to protect a portion exposed on the board 110. That is, the mold member 130 is formed to the predetermined thickness at the outer sides of the filter chip 120 and the sealing portion 125 on the board 110 to protect a circuit pattern of the board 110 or the filter chip 120.
[48] The mold member 130 can be formed using, for example, transfer molding using an epoxy mold compound, a molding method of thermally pressurizing an epoxy sheet, a method of discharging a liquid molding material and performing heat treatment, and injection molding. Also, a plated layer (not shown) can be formed on the mold member 130. The plated layer can be formed by selectively using sputtering, evaporating, electroplating, and electroless plating.
[49] Referring to Fig. 5, the board 110 is diced in a single package size. Here, during a dicing process, the board 110 is diced in a package size on which an individual chip 120 is mounted, or fully cut to manufacture the filter chip package 100.
[50] Second Embodiment
[51] Fig. 6 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the second embodiment, and Fig. 7 is a partial enlarged view of the portion A of Fig. 6. Descriptions of the same elements as those of the first embodiment are omitted in describing the second embodiment.
[52] Referring to Figs. 6 and 7, the filter chip package 200 comprises a board 210, a second sealing portion 216, a filter diip 220, a first sealing portion 225, and a mold member 230. The filter chip package 200 seals an air cavity 218 of the filter chip 220 using a double structure formed by the sealing portions 216 and 225.
[53] An electrode pattern 212 and a fixing pattern 213 are formed on a region on which the filter chip 220 of the board 210 is to be mounted. Here, the electrode pattern 212 is formed at a position corresponding to a bonding electrode 221 of the filter chip 220. The fixing pattern 213 is formed outside the electrode pattern 212 under the filter chip 220. The fixing pattern 213 is formed in a polygonal frame such as a quadrangular frame or a circular frame on the board 210.
[54] A metal bump 222 is formed on the electrode pattern 212. The second sealing portion
216 is formed on the fixing pattern 213. The second sealing portion 216 is formed in a wall shape using metal. The wall can have a height substantially equal to that of the air cavity 218.
[55] Also, the metal bump 222 and the second sealing portion 216 can be formed of Au or a material comprising an Au alloy containing Au to match with the patterns 212 and 213. Also, the metal bump 222 and the second sealing portion 216 can comprise at least one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
[56] The second sealing portion 216 can be formed by performing electroplating on the fixing pattern 213 or by screen-printing solder on the fixing pattern 213. The second sealing portion 216 can be connected to a ground pattern. For another example, the second sealing portion 216 can be formed by attaching a metal bar on the fixing pattern, or be formed of a resin such as epoxy and silicon.
[57] Also, the metal bump 222 can have a thickness of 20 μm or more. The second sealing portion 216 can have a thickness substantially equal to a distance between the filter chip 220 and the board 210, for example, a thickness of 20 μm or more.
[58] The filter chip 220 is bonded on the metal bump 222 using a flip method. The second sealing portion 216 is disposed under the filter chip 220.
[59] The first sealing portion 225 is formed in a dam shape surrounding the filter chip
220. The first sealing portion 225 is dispensed using a resin of high viscosity such as epoxy and silicon.
[60] The first sealing portion 225 is formed around the filter chip 220 outside the second sealing portion 216 to make the air cavity 218 an airtight space. That is, the double structure formed by the sealing portions 216 and 225 makes the airtight space of the air cavity 218 formed under the filter chip 220 and prevents moistures from penetrating into the air cavity 218.
[61] Here, the second sealing portion 216 can minimize inflow of a resin material caused by a pressure difference between the airtight space of the air cavity 218 and an external space while the first sealing portion 225 is formed.
[62] The mold member 230 is formed to protect the filter chip 220 on the board 210.
Also, an electron shielding plated layer (not shown) can be formed on the surface of the mold member 230. This plated layer blocks harmful electromagnetic waves propagating to or emitted from the filter chip.
[63] Third Embodiment
[64] Fig. 8 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the third embodiment. Descriptions of the same elements as those of the first embodiment are omitted in describing the third embodiment.
[65] Referring to Fig. 8, the filter chip package 300 comprises a board 310, a filter chip
320, a sealing portion 325, and a mold member 330. A cavity 316 is formed to a predetermined depth in the board 310 of the filter chip package 300. The cavity 316 has a size that can accommodate a portion of the individual filter chip 320. The cavity 316 can be formed to a depth corresponding to one third of the thickness of the board or 30-80% of the thickness of fee filter chip 320.
[66] An electrode pattern 312 is formed on the cavity 316 of the board 310. A metal bump
322 is formed on the electrode pattern 312. A bonding electrode 321 of the filter chip 320 is bonded on the metal bump 322 using a flip method.
[67] The sealing portion 325 seals the lateral side of the filter chip 320 partially accommodated in the cavity 316. That is, the sealing portion 325 is seals a space between the lateral side of the filter chip 320 and the cavity 316, so that the air cavity 318 under the filter chip 320 becomes an airtight space and blocks moisture penetration.
[68] The mold member 330 is formed on the board 310. A plated layer (not shown) can be formed on the surface of the mold member 330. The plated layer can be grounded to the board.
[69] Fourth Embodiment
[70] Fig. 9 is a cross-sectional view illustrating a filter chip package of a high frequency module according to the fourth embodiment. Descriptions of the same elements as those of the first embodiment are briefly made or omitted in describing the fourth embodiment.
[71] Referring to Fig. 9, the filter chip package 400 comprises a board 410, a filter chip
420, a ground portion 416, a sealing portion 425, a mold member 430, and a plated layer 440.
[72] An electrode pattern 412 and a ground pattern 413 are formed on flie board 410. A metal bump 422 is formed on flie electrode pattern 412. A bonding electrode 421 of flie filter chip 420 is flip-bonded on flie metal bump 422.
[73] The ground portion 416 is formed on flie ground pattern 413. The ground portion 416 is separated from flie package.
[74] The ground portion 416 can be formed of Au or a material comprising an Au alloy containing Au, or can be one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer. The height of flie ground portion 416 can be equal to 50 μm or more from flie board surface, or can be determined wifli consideration of flie thickness of flie filter chip.
[75] The sealing portion 425 is formed on flie board 410 and around flie filter chip 420 to make an air cavity 418 formed under flie filter chip 420 an airtight space.
[76] Also, flie plated layer 440 is formed on flie surface of flie mold member 430. BoIh ends of flie plated layer 440 are connected to flie ground portions 416 on flie board 410 to block EMI/EMC phenomenon of flie filter chip package 400.
[77] Here, flie plated layer 440 can be formed using sputtering, evaporating, electroplating, or electroless plating. Also, flie plated layer 440 can be formed of one or more metal layers wifli consideration of a bonding characteristic wifli flie mold member 430 and solidity of a plated body. For example, one or more layers formed of Cu, Ti, Ni, and Au, a conductive material, or a combination thereof can be stacked on flie surface of flie mold member 430. At this point, flie plated layer 440 can be stacked on flie surface of flie mold member 430 in a sequence of Cu layer/Ni layer/ Au layer.
[78] Figs. 10 to 16 are views illustrating a process of manufacturing a filter chip package of a high frequency module according to flie fourth embodiment.
[79] Referring to Fig. 10, circuit patterns such as flie electrode pattern 412 and flie ground pattern 413 are formed on flie board 410. The metal bump 422 is formed on flie electrode pattern 412. The ground portion 416 is formed on flie ground pattern 413. Here, flie ground portion 416 is formed in a wall having a predetermined height (e.g., 50 μm or more) apart a predetermined distance from flie electrode pattern 412. The ground portion 416 and flie metal bump 422 can be formed of a material comprising Au or an Au alloy containing Au using electroplating or electroless plating, or by screen-printing solder. Also, flie metal bump 422 and flie ground portion 416 can be formed of one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer. [80] Referring to Fig. 11, flie bonding electrode 421 of flie filter diip 420 is flip-bonded on flie metal bump 422 of flie board 410. Here, flie ground portion 416 is separated from flie filter diip 420 by a predetermined distance Gl.
[81] Referring to Fig. 12, a sealing portion 425 is formed in a dam shape around flie filter chip 420. The sealing portion 425 is dispensed along flie outer edges of flie filter chip 420 using a liquid resin material. At fliis point, flie sealing portion 425 makes flie air cavity 418 of flie filter chip 420 flie airtight space and prevents moisture penetration from flie outside.
[82] The ground portion 416 prevents flie sealing portion 425 from spreading when flie liquid resin material, which is a material of flie sealing portion 425, is dispensed.
[83] Referring to Fig. 13, flie mold member 430 is formed on flie board 410. The mold member 430 is formed to a predetermined height to protect flie filter chip 420.
[84] Referring to Fig. 14, a region Tl excluding a unit package size on flie board 410 is half-diced. The half-dicing process cuts up to a predetermined portion of flie board 410 corresponding to flie region Tl excluding flie unit package size, for example, a surface of flie board or up to a deeper layer than flie surface of flie board. At this point, a portion of flie ground portion 416 is exposed to flie outside.
[85] Referring to Fig. 15, flie plated layer 440 is formed on flie board 410. The plated layer 440 is formed on flie exposed surface of flie board 410 and flie surface of flie mold member 430. Here, flie plated layer 440 can be formed using sputtering, evaporating, electroplating, or electroless plating.
[86] Also, flie plated layer 440 can be formed of one or more metal layers wifli consideration of a bonding characteristic wifli flie mold member 430 and solidity of a plated body. For example, one or more layers formed of Cu, Ti, Ni, and Au, a conductive material, or a combination thereof can be stacked on flie surface of flie mold member 430. The plated layer 440 can be stacked on flie surface of flie mold member 430 in a sequence of Cu layer/Ni layer/ Au layer.
[87] At this point, flie ground portion 416 formed on flie board is electrically connected to bofli ends of flie plated layer 440, so that flie plated layer 440 is grounded to form a structure blocking EMI/EMC phenomenon of flie filter chip 420.
[88] Referring to Fig. 16, flie board 410 is cut in a unit package size. At Ms point, flie board 410 is fully diced in flie unit package size having flie filter chip 420, so Ihat flie filter chip package 400 is completed.
[89] The fourth embodiment provides flie filter chip 420 having flie air cavity 418 on flie board 410, protects flie chip using flie mold member 43, and allows flie plated layer 440 for shielding electromagnetic waves to be grounded to flie ground portion 416, thereby blocking harmful electromagnetic waves while protecting parts.
[90] Fifth Embodiment
[91] Fig. 17 is a cross-sectional view of a high frequency module having a filter chip according to flie fifth embodiment. Descriptions of flie same elements as those of the first embodiment are briefly made in describing the fifth embodiment.
[92] Referring to Fig. 17, the high frequency module 500 comprises a board 510, a chip part 527, a filter chip 520, a sealing portion 525, and a mold member 530.
[93] The board 510 comprises a ceramic board such as an HTCC and an LTCC, a silicon board, an MCPCB, and a general PCB.
[94] A first electrode pattern 511 and a second electrode pattern 512 designed in advance on the board 510 are electrically connected to other layer or a bottom layer through a via, a via hole 514, and a through hole.
[95] The chip part 527 comprises at least one of a ceramic capacitor, a chip inductor, and a chip switch, and is bonded on solder 523 of the first electrode pattern 511 using surface mount technology (SMT).
[96] A metal bump 522 is formed on the second electrode pattern 512. A bonding electrode 521 of the filter chip 520 is flip-bonded on the metal bump 522. Here, the filter chip 520 is a bare chip and can be realized in one or more of a SAW filter, a BAW filter, and an FBAR filter.
[97] The sealing portion 525 is formed in a dam shape along the periphery of the filter chip 520 and makes an air cavity 518 of the filter chip 520 an airtight space. A structure sealing the air cavity 518 formed under the filter chip 520 in the fifth embodiment can refer to the first embodiment illustrated in Fig. 1.
[98] The mold member 530 is formed to a predetermined height to protect the chip part
527 and the filter chip 520 on the board 510. The mold member 530 can be formed using one of epoxy molding compound, poly phenylene oxide, ESM, and silicon. Also, an electron shielding plated layer (not shown) can be formed on the surface of the mold member 530.
[99] This high frequency module 500 is manufactured in the form of an SIP(System In
Package) product having the chip part 527 such as a passive device, and the high frequency filter chip 520 as a package. Also, a semiconductor module package applied to an apparatus such as a cellular phone and a headset can be realized in an ultra slim profile. The high frequency module 500 can be applied to various package types such as a multi chip package (MCP) and an SIP. [100] Figs. 18 to 21 are views illustrating a process of manufacturing a high frequency module having a filter chip according to the fifth embodiment.
[101] Referring to Fig. 18, one or more chip parts 527 are bonded on the first electrode pattern 511 on the board 510 using SMT using solder 523.
[102] Referring to Fig. 19, the metal bump 522 is formed on the second electrode pattern 512 of the board 510. The bonding electrode 521 of the filter chip 520 is flip-bonded on the metal bump 522. At this point, the air cavity 518 of the filter chip 520 is not airtight.
[103] Referring to Fig. 20, the sealing portion 525 is formed around the filter chip 520. The sealing portion 525 is formed in a dam shape around the filter chip 520 to make the air cavity 518 of the filter chip 520 an airtight space.
[104] Referring to Fig. 21, the mold member 530 is formed on the board 510. The mold member 530 has a height equal to or greater than the height of the chip part to protect the chip part 527 and the filter chip 520. The mold member 530 can be formed using transfer molding using an epoxy mold compound, a molding method of thermally pressurizing an epoxy sheet, a method of discharging a liquid molding material and performing heat treatment, and/or injection molding. Also, a plated layer (not shown) can be formed on the mold member 530.
[105] Sixth Embodiment
[106] Fig. 22 is a cross-sectional view of a high frequency module having a filter chip according to the sixth embodiment. Descriptions of the same elements as those of the previous embodiments are briefly made or omitted in describing the sixth embodiment.
[107] Referring to Fig. 22, the high frequency module 600 comprises a board 610, a second sealing portion 616, a chip part 627, a filter chip 620, a first sealing portion 625, and a mold member 630.
[108] The second sealing portion 616 is formed on the board 610 under the filter chip 620. The second sealing portion 616 is formed in a polygonal frame shape or a circular frame shape on a fixing pattern 613. The second sealing portion 616 can be formed of Au or a material comprising an Au alloy containing Au. Also, for another example, the second sealing portion 616 can be formed of one of an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and an Au layer.
[109] The second sealing portion 616 prevents inflow of the first sealing portion 625 into an air cavity 618 of the filter chip 620 while the first sealing portion 625 is dispensed.
[110] The first sealing portion 625 is formed in a dam shape along the filter chip 620 to make the air cavity 618 formed under the filter chip 620 an airtight space. A structure sealing the air cavity 618 formed under the filter chip 620 in the sixth embodiment can refer to the second embodiment illustrated in Fig. 6.
[I l l] The air cavity 618 of the filter chip 620 becomes an airtight space through a double structure of the sealing portions 616 and 625 and can prevent moisture penetration from the outside.
[112] The mold member 630 is formed to a predetermined height on the board 610. The mold member 630 protects the chip part 627 and the filter chip 620 on the board 610.
[113] Seventh Embodiment
[114] Fig. 23 is a cross-sectional view of a high frequency module having a filter chip according to the seventh embodiment. Descriptions of the same elements as those of the previous embodiment are omitted in describing the seventh embodiment.
[115] Referring to Fig. 23, the high frequency module 700 comprises a board 710 having an cavity 716, chip parts 727, a filter chip 720, a sealing portion 725, and a mold member 730.
[116] The cavity 716 is formed on the board 710. The chip parts 727 on the board 710 are bonded on solder through SMT. A bonding electrode 721 of the filter chip 720 formed on an electrode pattern 712 inside the cavity 716 is flip-bonded on a metal bump 722.
[117] The cavity 716 has a size that can accommodate a portion of the filter chip 720, and has a depth corresponding to one third of the entire thickness of the board, or one third to two third of the thickness of the filter chip 720.
[118] The sealing portion 725 seals a space between the filter chip 720 and the air cavity 716. At Ms point, the sealing portion 725 can make the air cavity 718 of the filter chip 720 an airtight space and prevent moisture penetration from the outside. A structure sealing the air cavity 718 formed under the filter chip 720 in the seventh embodiment can refer to the third embodiment illustrated in Fig. 8.
[119] The mold member 730 is formed to protect the chip parts 727 and the filter chip 720 on the board 710.
[120] This high frequency module is manufactured in the form of an SIP product having the chip part such as a passive device, and the high frequency filter chip as a package. Also, a semiconductor module package applied to an apparatus such as a cellular phone and a headset can be realized in an ultra slim profile. The high frequency module can be applied to various package types such as an MCP and an SIP.
[121] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art. Industrial Applicability
[122] The high frequency module and the manufacturing method thereof according to the embodiments can reduce the thickness of the filter chip package to miniaturize the high frequency module.
[123] Also, the filter chip is sealed using a single structure or a double structure, so that reliability of the filter chip increases.
[124] Also, harmful electromagnetic waves can be effectively blocked.
[125] Also, since the filter chip and other chip parts are disposed together, a high frequency module can be integrated at high density.
[126] Also, a semiconductor module package applied to a cellular phone or a headset can be realized in an ultra slim profile.

Claims

Claims
[I] A high frequency module comprising: a board comprising a pattern; a filter chip forming an air cavity on flie board. a first sealing portion sealing a periphery of flie filter chip on flie board; and a mold member on flie board. [2] The high frequency module according to claim 1, wherein flie filter chip comprises at least one of a surface acoustic wave filter, a bulk acoustic wave filter, and a film bulk acoustic resonator filter. [3] The high frequency module according to claim 1, wherein flie first sealing portion comprises at least one of an epoxy resin material and a silicon resin material each having a dam shape. [4] The high frequency module according to claim 1, wherein flie mold member comprises at least one of an epoxy molding compound, poly phenylene oxide, epoxy sheet molding, and a silicon material.
[5] The high frequency module according to claim 1, comprising a cavity of a predetermined depth in flie board, flie filter chip being bonded inside flie cavity. [6] The high frequency module according to claim 1, comprising a second sealing portion inside flie first sealing portion. [7] The high frequency module according to claim 6, wherein flie second sealing portion comprises at least one of a metal layer including Au, an AuSn layer, a Cu deposition layer, a Ti layer, an Ni layer, and a resin material. [8] The high frequency module according to claim 1, comprising a ground portion on an outer side of flie first sealing portion of flie board. [9] The high frequency module according to claim 8, comprising a plated layer on a surface of flie mold member, flie plated layer being connected to flie ground portion. [10] A high frequency module comprising: a board comprising a pattern; a chip part on flie board; a filter chip forming an air cavity on flie board. a first sealing portion sealing a periphery of flie filter chip on flie board; and a mold member on flie board.
[I I] The high frequency module according to claim 10, wherein flie first sealing portion comprises at least one an epoxy resin material and a silicon resin material each having a dam shape.
[12] The high frequency module according to claim 10, comprising a cavity of a predetermined depth in the board, the filter chip being bonded inside the cavity. [13] The high frequency module according to claim 10, comprising a second sealing inside the first sealing portion, the second sealing portion having one of a polygonal frame shape and a circular frame shape. [14] The high frequency module according to claim 13, wherein the second sealing portion comprises at least one of a metal layer comprising Au, an AuSn layer, a
Cu deposition layer, a Ti layer, an Ni layer, and a resin material. [15] The high frequency module according to claim 10, comprising a ground portion on an outer side of the first sealing portion of the board. [16] The high frequency module according to claim 15, comprising a plated layer on a surface of the mold member, the plated layer being connected to the ground portion. [17] A method for manufacturing a high frequency module, the method comprising: bonding a filter chip on a board; forming a first sealing portion around the filter chip to seal an air cavity formed under the filter chip; and forming a mold member on the board. [18] The method according to claim 17, wherein a cavity of a predetermined depth is formed in a filter chip region of the board, and the filter chip is bonded in the cavity. [19] The method according to claim 17, comprising forming a second sealing portion inside the first sealing portion, the second sealing portion having one of a polygonal frame shape and a circular shape. [20] The method according to clam 17, comprising forming a plated layer on the mold member, the plated layer being grounded on a ground portion of the board.
PCT/KR2007/006615 2006-12-22 2007-12-18 High frequency module and manufacturing method thereof WO2008078898A1 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR10-2006-0132296 2006-12-22
KR1020060132295A KR20080058535A (en) 2006-12-22 2006-12-22 Filter chip package and manufacturing method thereof
KR10-2006-0132295 2006-12-22
KR1020060132296A KR20080058536A (en) 2006-12-22 2006-12-22 Filter chip package and manufacturing method thereof
KR10-2006-0133274 2006-12-23
KR1020060133274A KR20080058984A (en) 2006-12-23 2006-12-23 Filter chip package and manufacturing method thereof
KR10-2007-0009660 2007-01-30
KR10-2007-0009659 2007-01-30
KR1020070009660A KR101349544B1 (en) 2007-01-30 2007-01-30 High frequency module
KR1020070009659A KR20080071432A (en) 2007-01-30 2007-01-30 High frequency module

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WO2008078898A1 true WO2008078898A1 (en) 2008-07-03

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WO2019045953A1 (en) * 2017-08-30 2019-03-07 Qualcomm Incorporated Molded device package with air cavtiy
WO2022036299A1 (en) * 2020-08-14 2022-02-17 Qorvo Us, Inc. Electronic device with solder interconnect and multiple material encapsulant

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US20040201090A1 (en) * 2003-03-10 2004-10-14 Robert Aigner Electronic device with cavity and a method for producing the same
US7002282B2 (en) * 2003-01-28 2006-02-21 Fujitsu Media Devices Limited Surface acoustic wave device and method of fabricating the same
US20060099390A1 (en) * 2004-11-08 2006-05-11 Yoshikazu Sugiyama Electronic component module

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US5859473A (en) * 1996-10-15 1999-01-12 Fujitsu Limited Duplexer package
US7002282B2 (en) * 2003-01-28 2006-02-21 Fujitsu Media Devices Limited Surface acoustic wave device and method of fabricating the same
US20040201090A1 (en) * 2003-03-10 2004-10-14 Robert Aigner Electronic device with cavity and a method for producing the same
US20060099390A1 (en) * 2004-11-08 2006-05-11 Yoshikazu Sugiyama Electronic component module

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Publication number Priority date Publication date Assignee Title
WO2019045953A1 (en) * 2017-08-30 2019-03-07 Qualcomm Incorporated Molded device package with air cavtiy
US10490472B2 (en) 2017-08-30 2019-11-26 Qualcomm Incorporated Air cavity mold
WO2022036299A1 (en) * 2020-08-14 2022-02-17 Qorvo Us, Inc. Electronic device with solder interconnect and multiple material encapsulant

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