WO2008078869A1 - Apparatus for controlling igbt selection of synchronous induction heating circuit - Google Patents

Apparatus for controlling igbt selection of synchronous induction heating circuit Download PDF

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Publication number
WO2008078869A1
WO2008078869A1 PCT/KR2007/003426 KR2007003426W WO2008078869A1 WO 2008078869 A1 WO2008078869 A1 WO 2008078869A1 KR 2007003426 W KR2007003426 W KR 2007003426W WO 2008078869 A1 WO2008078869 A1 WO 2008078869A1
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WO
WIPO (PCT)
Prior art keywords
driving unit
igbt driving
stage
igbt
signal
Prior art date
Application number
PCT/KR2007/003426
Other languages
French (fr)
Inventor
Jin Wook Han
Original Assignee
Woongjin Cuchen Co., Ltd.
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Publication date
Application filed by Woongjin Cuchen Co., Ltd. filed Critical Woongjin Cuchen Co., Ltd.
Publication of WO2008078869A1 publication Critical patent/WO2008078869A1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H05B6/062—Control, e.g. of temperature, of power for cooking plates or the like
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/0252—Domestic applications
    • H05B1/0258—For cooking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/12—Cooking devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers

Definitions

  • the present invention relates to an apparatus for controlling an IGBT selection of a synchronous IH circuit, and more particularly to an apparatus for controlling an IGBT selection of a synchronous IH circuit, which enables each heating coil to be selectively used in an IH circuit controlling two or more independent heating coils through one oscillation control circuit.
  • an induction heating (IH) apparatus refers to an apparatus for cooking food and the like by heating a magnetic vessel resting on a heating coil in such a manner that a commercial direct current voltage applied to the heating coil is switched on/off, and a strong magnetic field is formed in the heating coil through a counter electromotive force generated when the commercial direct current voltage is turned off.
  • a method for controlling the output of the induction heating apparatus is a method for controlling the output by using a phase detecting means for detecting a phase difference signal from both ends of a resonance circuit of the induction heating apparatus.
  • a trigger signal is supplied for keeping an oscillating means oscillating by synchronizing a resonance time constant with the oscillating timing of the oscillating means and using the phase difference signal detected from the phase detecting means.
  • Another method using a duty cycle is also used for controlling the output of the induction heating apparatus.
  • the controlling method using a duty cycle is a method for controlling the output by using a ratio between power-on time and power-off time of a rated maximum output. In this method, a low output is produced when the power is switched on for a short time and is switched off for a long time. On the contrary, a high output is produced when the power is switched on for a long time and is switched off for a short time.
  • the present invention aims at providing an apparatus for controlling an IGBT selection of a synchronous IH circuit, which can control each heating coil to be selectively used in a synchronous IH circuit controlling two independent heating coils through one oscillation control circuit.
  • the present invention has an advantage in that it is possible to selectively use respective heating coils in a synchronous IH circuit controlling two or more independent heating coils through one oscillation control circuit.
  • FIG. 1 is a block diagram illustrating the structure of an induction heating apparatus including an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention
  • FIG. 2 is an eletrical circuit diagram illustrating the structure of an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention
  • FIG. 3 is an electrical circuit diagram illustrating another embodiment of the apparatus for controlling an IGBT selection of FIG. 2;
  • FIG. 4 is an electrical circuit diagram illustrating yet another embodiment of the apparatus for controlling an IGBT selection of FIG. 2.
  • Rl, R2, R3 and R4 resistances coml and com2 : comparators Best Mode for Carrying Out the Invention
  • an apparatus for controlling an IGBT selection of a synchronous IH circuit includes a microprocessor outputting on/off signals to a first IGBT driving unit which outputs a control signal for switching on/off a first heating coil unit heating a cooking vessel and to a second IGBT driving unit which outputs a control signal for switching on/off a second heating coil unit heating the cooking vessel, and outputting oscillation signals for switching control of the first IGBT driving unit and the second IGBT driving unit; a first switch unit controlling an on/off switching signal, which is generated from the first IGBT driving unit, for the first heating coil unit, to be sunk according to the on/off signal output from the microprocessor to the first IGBT driving unit; and a second switch unit controlling an on/off switching signal, which is generated from the second IGBT driving unit, for the second heating coil unit, to be sunk according to the on/off signal output
  • the first switch unit includes a first bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a second bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the first bipolar transistor, and a collector stage is connected to the output stage of the first IGBT driving unit.
  • the second switch unit includes a third bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a fourth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the third bipolar transistor, and a collector stage is connected to the output stage of the second IGBT driving unit.
  • the first switch unit includes a fifth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the first IGBT driving unit.
  • the second switch unit includes a sixth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the second IGBT driving unit.
  • the first switch unit includes a comparator, of which a positive (+) input terminal is connected to the on/off signal for the first IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the first IGBT driving unit.
  • the second switch unit includes a comparator, of which a positive (+) input terminal is connected to the on/off signal for the second IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the second IGBT driving unit.
  • FIG. 1 illustrates a structure of an induction heating apparatus including an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention.
  • An apparatus for controlling an IGBT selection of a synchronous IH circuit includes a current detecting unit 120 using a direct current power supply into which a power supply applied from a utility power supply 100 is converted by a rectifying unit 110, and detecting an output current change value according to driving; a voltage detecting unit 130 detecting a voltage change value of an input power supply; an output compensating unit 140 outputting a control signal for output compensation according to the changed values detected from the current detecting unit 120 and the voltage detecting unit 130; a first IGBT driving unit 300 outputting a control signal for switching on/off a first heating coil unit 500 which heats a cooking vessel (not shown) with a certain output according to a switching signal; a second IGBT driving unit 310 outputting a control signal for switching on/off a second heating coil unit 510 which heats the cooking vessel with an output equal to or less than the output of the first heating coil unit 500; a microprocessor 150 outputting an oscillation signal Ml for switching control of the first
  • FIG. 2 illustrates a structure of an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention.
  • the apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention will be described in more detail with reference to FIG.1 and FIG. 2.
  • the microprocessor 150 applies the oscillation signal M 1 to both the first and the second IGBT driving units 300 and 310, and outputs a signal M2 for controlling on/off of the first IGBT driving unit 300 to the first switch unit 600, and a signal M3 for controlling on/off of the second IGBT driving unit 310 to the second switch unit 610, respectively, so as to selectively operate the first and the second IGBT driving units 300 and 310 according to the oscillation signal M 1.
  • the IH controlling unit 200 outputs signals for controlling on/off of the first and the second IGBT driving units 300 and 310 such that the first and the second heating coil units 500 and 510 operate according to the oscillation signal Ml output from the microprocessor 150.
  • the first IGBT driving unit 300 or the second IGBT driving unit 310 outputs a control signal for switching turning on/off the first or the second heating coil unit 500, 510 according to the switching on/off control signal output from the IH controlling unit 200.
  • the first switch unit 600 consists of two bipolar transistors Ql and Q2.
  • the two bipolar transistors Ql, Q2 preferably designate NPN types.
  • a first bipolar transistor Ql is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal M2 for the first IGBT driving unit, of the microprocessor 150, and a collector stage is connected to a source voltage (VCC) terminal.
  • GND ground voltage
  • VCC source voltage
  • a second bipolar transistor Q2 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the collector stage of the first bipolar transistor Ql, and a collector stage is connected to the output stage of the first IGBT driving unit 300.
  • GND ground voltage
  • a second switch unit 610 consists of two bipolar transistors Q3 and Q4.
  • the two bipolar transistors Q3, Q4 preferably designate NPN types.
  • a third bipolar transistor Q3 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for on/off signal M3 for the second IGBT driving unit, of the microprocessor 150, and a collector stage is connected to a source voltage (VCC) terminal.
  • GND ground voltage
  • VCC source voltage
  • a fourth bipolar transistor Q4 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the collector stage of the third bipolar transistor Q3, and a collector stage is connected to the output stage of the second IGBT driving unit 310.
  • GND ground voltage
  • FIG. 3 illustrates another embodiment of the apparatus for controlling an IGBT selection of FIG. 2. While the apparatus for controlling an IGBT selection is configured using two bipolar transistors Ql and Q2 in the embodiment of FIG. 2, in the embodiment of FIG. 3, the apparatus for controlling an IGBT selection is configured in such a manner that the output stages of the first and the second IGBT driving units 300, 310 are sunk using one bipolar transistor.
  • the first switch unit 600 is a fifth bipolar transistor Q5, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor 150, and a collector stage is connected to the output stage of the first IGBT driving unit 300.
  • GND ground voltage
  • the second switch unit 610 is a sixth bipolar transistor Q6, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor 150, and a collector stage is connected to the output stage of the second IGBT driving unit 310.
  • GND ground voltage
  • FIG. 4 illustrates yet another embodiment of the apparatus for controlling an IGBT selection of FIG. 2. There is a difference between the embodiments of FIG.2 and 4 in that the output stages of the first and the second IGBT driving units 300, 310 are sunk by using comparators in the embodiment of FIG. 4.
  • the first switch unit 600 includes a comparator coml of which a positive (+) input terminal is connected to an on/off signal for the first IGBT driving unit input from the microprocessor 150 through connection to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor 150, a negative (-) input terminal is connected to a reference voltage divided by resistances Rl, R2, and the output stage is connected to the output stage of the first IGBT driving unit 300 in such a manner that the output of the first IGBT driving unit 300 is sunk according to the on/off signal for the first IGBT driving unit.
  • the second switch unit 610 includes a comparator com2 of which a positive (+) input terminal is connected to an on/off signal for the second IGBT driving unit input from the microprocessor 150 through connection to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor 150, a negative (-) input terminal is connected to a reference voltage divided by resistances R3, R4, and the output stage is connected to the output stage of the second IGBT driving unit 310 in such a manner that the output of the second IGBT driving unit 310 is sunk according to the on/off signal for the second IGBT driving unit.
  • the microprocessor 150 When the first heating coil unit 500 and the second heating coil unit 510 all operate in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a high-level voltage, that is, an on-signal M2 for the first IGBT driving unit 300, and another high-level voltage, that is, an on-signal M3 for the second IGBT driving unit 310.
  • the microprocessor 150 When the first heating coil unit 500 operates and the second heating coil unit 510 does not operate in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a high-level voltage, that is, an on-signal M2 for the first IGBT driving unit 300 and a low-level voltage, that is, an off-signal M3 for the second IGBT driving unit 310.
  • the signal M2 output from the microprocessor 150 turns on the first bipolar transistor Ql, and the signal M3 turns off the third bipolar transistor Q3.
  • the first bipolar transistor Ql is turned on, the second bipolar transistor Q2 is turned off, such that the first IGBT driving unit 300 is in an on-state in such a manner that a control signal for switching output from the output stage of the first IGBT driving unit 300 is provided to the first IGBT element 400.
  • the fourth bipolar transistor Q4 is turned on, such that the second IGBT driving unit 310 is in an off-state in such a manner that the output stage of the second IGBT driving unit 310 is sunk.
  • the microprocessor 150 When the first heating coil unit 500 does not operate and the second heating coil unit 510 operates in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a low-level voltage, that is, an off-signal M2 for switching off the first IGBT driving unit 300 and a high-level voltage, that is, an on- signal M3 for the second IGBT driving unit 310.
  • the signal M2 output from the microprocessor 150 turns off the first bipolar transistor Ql, and the signal M3 turns on the third bipolar transistor Q3.
  • the second bipolar transistor Q2 is turned on, such that the first IGBT driving unit 300 is in an off-state in such a manner that the output stage of the first IGBT driving unit 300 is sunk.
  • the fourth bipolar transistor Q4 is turned off, such that the second IGBT driving unit 310 is in an on-state in such a manner that a control signal for switching output from the output stage of the second IGBT driving unit 310 is provided to the second IGBT element 410.
  • the microprocessor 150 does not allow the first and the second IGBT driving unit 300, 310 to operate in such a manner as to output no oscillation signal Ml or low- level voltages, that is, off-signals M2 and M3 for the first IGBT driving unit 300 and the second IGBT driving unit 310.
  • M2 for the first IGBT driving unit 300 and the second IGBT driving unit 310 have high-level voltages from the microprocessor 150, the fifth and the sixth bipolar transistors Q5 and Q6 are turned on, such that the outputs of the first and the second IGBT driving unit 300, 310 are sunk.
  • the present invention has advantages in that it is possible to provide an induction heating apparatus including a high output by using two or more independent heating coils.

Abstract

Disclosed is an apparatus for controlling an IGBT selection of a synchronous IH circuit, which enables each heating coil to be selectively used in an IH circuit controlling two or more independent heating coils through one oscillation control circuit.

Description

Description
APPARATUS FOR CONTROLLING IGBT SELECTION OF SYNCHRONOUS INDUCTION HEATING CIRCUIT
Technical Field
[1] The present invention relates to an apparatus for controlling an IGBT selection of a synchronous IH circuit, and more particularly to an apparatus for controlling an IGBT selection of a synchronous IH circuit, which enables each heating coil to be selectively used in an IH circuit controlling two or more independent heating coils through one oscillation control circuit. Background Art
[2] Generally, an induction heating (IH) apparatus refers to an apparatus for cooking food and the like by heating a magnetic vessel resting on a heating coil in such a manner that a commercial direct current voltage applied to the heating coil is switched on/off, and a strong magnetic field is formed in the heating coil through a counter electromotive force generated when the commercial direct current voltage is turned off.
[3] A method for controlling the output of the induction heating apparatus is a method for controlling the output by using a phase detecting means for detecting a phase difference signal from both ends of a resonance circuit of the induction heating apparatus. In this method, a trigger signal is supplied for keeping an oscillating means oscillating by synchronizing a resonance time constant with the oscillating timing of the oscillating means and using the phase difference signal detected from the phase detecting means.
[4] Another method using a duty cycle is also used for controlling the output of the induction heating apparatus. The controlling method using a duty cycle is a method for controlling the output by using a ratio between power-on time and power-off time of a rated maximum output. In this method, a low output is produced when the power is switched on for a short time and is switched off for a long time. On the contrary, a high output is produced when the power is switched on for a long time and is switched off for a short time.
Disclosure of Invention Technical Problem
[5] However, such an induction heating apparatus has a problem in that it cannot provide a high output due to limitations on the performance of an Insulated Gate Bipolar Transistor (IGBT) element.
[6] Although an IH circuit has recently been proposed, which is configured to provide a high output which could not be provided by one heating coil, by means of two in- dependent heating coils, there is a problem in that a control circuit is enlarged because independent control circuits are required for separately controlling the two independent heating coils.
[7] Also, in the case of a synchronous IH circuit, there is a problem in that although an oscillation signal for switching on/off only one IGBT is provided, an oscillation signal is also generated for the other IGBT. Technical Solution
[8] The present invention aims at providing an apparatus for controlling an IGBT selection of a synchronous IH circuit, which can control each heating coil to be selectively used in a synchronous IH circuit controlling two independent heating coils through one oscillation control circuit. Advantageous Effects
[9] The present invention has an advantage in that it is possible to selectively use respective heating coils in a synchronous IH circuit controlling two or more independent heating coils through one oscillation control circuit. Brief Description of the Drawings
[10] FIG. 1 is a block diagram illustrating the structure of an induction heating apparatus including an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention;
[11] FIG. 2 is an eletrical circuit diagram illustrating the structure of an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention;
[12] FIG. 3 is an electrical circuit diagram illustrating another embodiment of the apparatus for controlling an IGBT selection of FIG. 2; and
[13] FIG. 4 is an electrical circuit diagram illustrating yet another embodiment of the apparatus for controlling an IGBT selection of FIG. 2.
[14]
[15] (description of reference numerals on main parts of the drawings)
[16] 100: utility power supply 110: rectifying unit
[17] 120: current detecting unit 130: voltage detecting unit
[18] 140: output compensating unit 150: microprocessor
[19] 200: IH controlling unit 300: first IGBT driving unit
[20] 310: second IGBT driving unit 400: first IGBT element
[21] 410: second IGBT element 500: first heating coil unit
[22] 510: second heating coil unit 600: first switch unit
[23] 610: second switch unit Q2, Q3, Q4, Q5 and Q6: transistors
[24] Rl, R2, R3 and R4 : resistances coml and com2 : comparators Best Mode for Carrying Out the Invention
[25] In a synchronous IH control apparatus controlling two IGBT driving units through one inverter, an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention includes a microprocessor outputting on/off signals to a first IGBT driving unit which outputs a control signal for switching on/off a first heating coil unit heating a cooking vessel and to a second IGBT driving unit which outputs a control signal for switching on/off a second heating coil unit heating the cooking vessel, and outputting oscillation signals for switching control of the first IGBT driving unit and the second IGBT driving unit; a first switch unit controlling an on/off switching signal, which is generated from the first IGBT driving unit, for the first heating coil unit, to be sunk according to the on/off signal output from the microprocessor to the first IGBT driving unit; and a second switch unit controlling an on/off switching signal, which is generated from the second IGBT driving unit, for the second heating coil unit, to be sunk according to the on/off signal output from the microprocessor to the second IGBT driving unit.
[26] Also, the first switch unit includes a first bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a second bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the first bipolar transistor, and a collector stage is connected to the output stage of the first IGBT driving unit.
[27] Also, the second switch unit includes a third bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a fourth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the third bipolar transistor, and a collector stage is connected to the output stage of the second IGBT driving unit.
[28] Additionally, as another embodiment of the first switch unit, the first switch unit includes a fifth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the first IGBT driving unit.
[29] Also, as another embodiment of the second switch unit, the second switch unit includes a sixth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the second IGBT driving unit.
[30] Additionally, as yet another embodiment of the first switch unit, the first switch unit includes a comparator, of which a positive (+) input terminal is connected to the on/off signal for the first IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the first IGBT driving unit.
[31] Also, as yet another embodiment of the second switch unit, the second switch unit includes a comparator, of which a positive (+) input terminal is connected to the on/off signal for the second IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the second IGBT driving unit. Mode for the Invention
[32] Hereinafter, an exemplary embodiment according to the present invention will be described with reference to the accompanying drawings.
[33] FIG. 1 illustrates a structure of an induction heating apparatus including an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention.
[34] An apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention includes a current detecting unit 120 using a direct current power supply into which a power supply applied from a utility power supply 100 is converted by a rectifying unit 110, and detecting an output current change value according to driving; a voltage detecting unit 130 detecting a voltage change value of an input power supply; an output compensating unit 140 outputting a control signal for output compensation according to the changed values detected from the current detecting unit 120 and the voltage detecting unit 130; a first IGBT driving unit 300 outputting a control signal for switching on/off a first heating coil unit 500 which heats a cooking vessel (not shown) with a certain output according to a switching signal; a second IGBT driving unit 310 outputting a control signal for switching on/off a second heating coil unit 510 which heats the cooking vessel with an output equal to or less than the output of the first heating coil unit 500; a microprocessor 150 outputting an oscillation signal Ml for switching control of the first and the second IGBT driving units 300 and 310, and on/off signals M2 and M3 for the first IGBT driving unit 300 and the second IGBT driving unit 310; an IH controlling unit 200 outputting switching on/off signals to the first and the second IGBT driving units 300 and 310 according to the oscillation signal Ml output from the microprocessor 150; a first switch unit 600 allowing the output of the first IGBT driving unit 300 to be sunk according to the on/ off signal M2, which is output from the microprocessor 150, for the first IGBT driving unit; and a second switch unit 610 allowing the output of the second IGBT driving unit 310 to be sunk according to the on/off signal M3, which is output from the microprocessor 150, for the second IGBT driving unit. Undescribed reference numerals 400 and 410 designate IGBT elements.
[35]
[36] FIG. 2 illustrates a structure of an apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention. The apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention will be described in more detail with reference to FIG.1 and FIG. 2.
[37] When the first heating coil unit 500 and the second heating coil unit 510 simultaneously operate or when only one of them operates, the microprocessor 150 applies the oscillation signal M 1 to both the first and the second IGBT driving units 300 and 310, and outputs a signal M2 for controlling on/off of the first IGBT driving unit 300 to the first switch unit 600, and a signal M3 for controlling on/off of the second IGBT driving unit 310 to the second switch unit 610, respectively, so as to selectively operate the first and the second IGBT driving units 300 and 310 according to the oscillation signal M 1.
[38] The IH controlling unit 200 outputs signals for controlling on/off of the first and the second IGBT driving units 300 and 310 such that the first and the second heating coil units 500 and 510 operate according to the oscillation signal Ml output from the microprocessor 150.
[39] The first IGBT driving unit 300 or the second IGBT driving unit 310 outputs a control signal for switching turning on/off the first or the second heating coil unit 500, 510 according to the switching on/off control signal output from the IH controlling unit 200.
[40] The first switch unit 600 consists of two bipolar transistors Ql and Q2. The two bipolar transistors Ql, Q2 preferably designate NPN types.
[41] A first bipolar transistor Ql is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal M2 for the first IGBT driving unit, of the microprocessor 150, and a collector stage is connected to a source voltage (VCC) terminal.
[42] A second bipolar transistor Q2 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the collector stage of the first bipolar transistor Ql, and a collector stage is connected to the output stage of the first IGBT driving unit 300.
[43] A second switch unit 610 consists of two bipolar transistors Q3 and Q4. The two bipolar transistors Q3, Q4 preferably designate NPN types. [44] A third bipolar transistor Q3 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for on/off signal M3 for the second IGBT driving unit, of the microprocessor 150, and a collector stage is connected to a source voltage (VCC) terminal.
[45] A fourth bipolar transistor Q4 is a transistor, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the collector stage of the third bipolar transistor Q3, and a collector stage is connected to the output stage of the second IGBT driving unit 310.
[46] FIG. 3 illustrates another embodiment of the apparatus for controlling an IGBT selection of FIG. 2. While the apparatus for controlling an IGBT selection is configured using two bipolar transistors Ql and Q2 in the embodiment of FIG. 2, in the embodiment of FIG. 3, the apparatus for controlling an IGBT selection is configured in such a manner that the output stages of the first and the second IGBT driving units 300, 310 are sunk using one bipolar transistor.
[47] That is, the first switch unit 600 is a fifth bipolar transistor Q5, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor 150, and a collector stage is connected to the output stage of the first IGBT driving unit 300.
[48] Also, the second switch unit 610 is a sixth bipolar transistor Q6, of which an emitter stage is connected to a ground voltage (GND) terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor 150, and a collector stage is connected to the output stage of the second IGBT driving unit 310.
[49]
[50] FIG. 4 illustrates yet another embodiment of the apparatus for controlling an IGBT selection of FIG. 2. There is a difference between the embodiments of FIG.2 and 4 in that the output stages of the first and the second IGBT driving units 300, 310 are sunk by using comparators in the embodiment of FIG. 4.
[51] That is, the first switch unit 600 includes a comparator coml of which a positive (+) input terminal is connected to an on/off signal for the first IGBT driving unit input from the microprocessor 150 through connection to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor 150, a negative (-) input terminal is connected to a reference voltage divided by resistances Rl, R2, and the output stage is connected to the output stage of the first IGBT driving unit 300 in such a manner that the output of the first IGBT driving unit 300 is sunk according to the on/off signal for the first IGBT driving unit.
[52] Also, the second switch unit 610 includes a comparator com2 of which a positive (+) input terminal is connected to an on/off signal for the second IGBT driving unit input from the microprocessor 150 through connection to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor 150, a negative (-) input terminal is connected to a reference voltage divided by resistances R3, R4, and the output stage is connected to the output stage of the second IGBT driving unit 310 in such a manner that the output of the second IGBT driving unit 310 is sunk according to the on/off signal for the second IGBT driving unit.
[53]
[54] Next, operations of the apparatus for controlling an IGBT selection of a synchronous IH circuit according to the present invention will be described with reference to FIG. 1 and 2.
[55]
[56] (In the case where the first IGBT driving unit and the second IGBT driving unit are both in an on-state)
[57] When the first heating coil unit 500 and the second heating coil unit 510 all operate in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a high-level voltage, that is, an on-signal M2 for the first IGBT driving unit 300, and another high-level voltage, that is, an on-signal M3 for the second IGBT driving unit 310.
[58] The signal M2 and the signal M3 output from the microprocessor 150 turn on the first bipolar transistor Ql and the third bipolar transistor Q3, respectively.
[59] When the first bipolar transistor Ql and the third bipolar transistor Q3 are turned on, respectively, the second bipolar transistor Q2 and the fourth bipolar transistor Q4 are turned off, respectively, such that the first IGBT driving unit 300 and the second IGBT driving unit 310 maintain their on-states in such a manner that control signals for switching output from the output stages of the first IGBT driving unit 300 and the second IGBT driving unit 310 are provided to the first IGBT element 400 and the second IGBT element 410.
[60]
[61] (In the case where the first IGBT driving unit is in an on-state and the second IGBT driving unit is in an off- state)
[62] When the first heating coil unit 500 operates and the second heating coil unit 510 does not operate in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a high-level voltage, that is, an on-signal M2 for the first IGBT driving unit 300 and a low-level voltage, that is, an off-signal M3 for the second IGBT driving unit 310.
[63] The signal M2 output from the microprocessor 150 turns on the first bipolar transistor Ql, and the signal M3 turns off the third bipolar transistor Q3. [64] When the first bipolar transistor Ql is turned on, the second bipolar transistor Q2 is turned off, such that the first IGBT driving unit 300 is in an on-state in such a manner that a control signal for switching output from the output stage of the first IGBT driving unit 300 is provided to the first IGBT element 400.
[65] Meanwhile, when the third bipolar transistor Q3 is turned off, the fourth bipolar transistor Q4 is turned on, such that the second IGBT driving unit 310 is in an off-state in such a manner that the output stage of the second IGBT driving unit 310 is sunk.
[66]
[67] (In the case where the first IGBT driving unit is in an off-state and the second IGBT driving unit is in an on- state)
[68] When the first heating coil unit 500 does not operate and the second heating coil unit 510 operates in order to heat a cooking vessel (not shown), the microprocessor 150 outputs an oscillation signal Ml, a low-level voltage, that is, an off-signal M2 for switching off the first IGBT driving unit 300 and a high-level voltage, that is, an on- signal M3 for the second IGBT driving unit 310.
[69] The signal M2 output from the microprocessor 150 turns off the first bipolar transistor Ql, and the signal M3 turns on the third bipolar transistor Q3.
[70] When the first bipolar transistor Ql is turned off, the second bipolar transistor Q2 is turned on, such that the first IGBT driving unit 300 is in an off-state in such a manner that the output stage of the first IGBT driving unit 300 is sunk.
[71] Meanwhile, when the third bipolar transistor Q3 is turned on, the fourth bipolar transistor Q4 is turned off, such that the second IGBT driving unit 310 is in an on-state in such a manner that a control signal for switching output from the output stage of the second IGBT driving unit 310 is provided to the second IGBT element 410.
[72]
[73] (In the case where the first IGBT driving unit and the second IGBT driving unit are both in an off-state)
[74] When neither the first heating coil unit 500 nor the second heating coil unit 510 operates, the microprocessor 150 does not allow the first and the second IGBT driving unit 300, 310 to operate in such a manner as to output no oscillation signal Ml or low- level voltages, that is, off-signals M2 and M3 for the first IGBT driving unit 300 and the second IGBT driving unit 310.
[75] Meanwhile, in operations according to the embodiment of FIG. 3, when the signals
M2, M3 for the first IGBT driving unit 300 and the second IGBT driving unit 310 have high-level voltages from the microprocessor 150, the fifth and the sixth bipolar transistors Q5 and Q6 are turned on, such that the outputs of the first and the second IGBT driving unit 300, 310 are sunk.
[76] Subsequently, when the microprocessor 150 outputs a low-level voltage, the fifth and the sixth bipolar transistors Q5, Q6 are turned off, and then the collector stage and the output stages of the first and the second IGBT driving units 300, 310 are in an open-state, such that the control signals from the first and the second IGBT driving units 300, 310 are provided to the first and the second IGBT elements 400, 410.
[77]
[78] In operations according to the embodiment of FIG. 4, when reference voltages of the comparators coml and com2 are set to lower than the voltages of the on/off signals M2, M3 for the first and the second IGBT driving unit, which are output from the microprocessor 150, the output stages of the first and the second IGBT driving units 300, 310 are sunk.
[79] Subsequently, when the output voltage levels of the on/off signals M2, M3 for the first and the second IGBT driving units are higher than the reference voltage level, output stages of the comparators coml, com2, which cause the output stages of the first and the second IGBT driving units 300, 310 to be sunk, are in an open-state, such that the control signals from the first and the second IGBT driving units 300, 310 are provided to the first and the second IGBT elements 400, 410.
[80] Accordingly, it is possible to control both of two independent heating coils to drive or to control only one selected heating coil to operate.
[81] Also, while two independent heating coils have been described as an embodiment in the present invention, more than two independent heating coils, for example, three independent heating coils can be configured in such a manner as to controlled.
[82] That is, it is possible to selectively control three heating coils by including three independent heating coils, three IGBT driving units and three IGBT elements for controlling each of the three heating coils mentioned above, and by disposing three switch units for switching on/off each of the IGBT driving units.
[83] The present invention has advantages in that it is possible to provide an induction heating apparatus including a high output by using two or more independent heating coils.
[84] In the foregoing, an exemplary embodiment of the present invention has been illustrated and described. While the present invention is not limited to the embodiment described above, it will be understood by those skilled in the art to which the present invention belongs that various changes in forms and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

Claims

Claims
[1] An apparatus for controlling an IGBT selection of a synchronous IH circuit in a synchronous IH control apparatus controlling two IGBT driving units through one inverter, the apparatus comprising: a microprocessor outputting on/off signals to a first IGBT driving unit which outputs a control signal for switching on/off a first heating coil unit heating a cooking vessel and to a second IGBT driving unit which outputs a control signal for switching on/off a second heating coil unit heating the cooking vessel, and outputting oscillation signals for switching control of the first IGBT driving unit and the second IGBT driving unit; a first switch unit controlling an on/off switching signal, which is generated from the first IGBT driving unit, for the first heating coil unit, to be sunk according to the on/off signal output from the microprocessor to the first IGBT driving unit; and a second switch unit controlling an on/off switching signal, which is generated from the second IGBT driving unit, for the second heating coil unit, to be sunk according to the on/off signal output from the microprocessor to the second IGBT driving unit.
[2] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the first switch unit comprises: a first bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a second bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the first bipolar transistor, and a collector stage is connected to the output stage of the first IGBT driving unit.
[3] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the second switch unit comprises: a third bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to a source voltage terminal; and a fourth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the collector stage of the third bipolar transistor, and a collector stage is connected to the output stage of the second IGBT driving unit.
[4] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the first switch unit comprises a fifth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the first IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the first IGBT driving unit.
[5] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the second switch unit comprises a sixth bipolar transistor, of which an emitter stage is connected to a ground voltage terminal, a base stage is connected to the output stage, which is for an on/off signal for the second IGBT driving unit, of the microprocessor, and a collector stage is connected to the output stage of the second IGBT driving unit.
[6] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the first switch unit comprises a comparator, of which a positive (+) input terminal is connected to the on/off signal for the first IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the first IGBT driving unit.
[7] The apparatus for controlling a IGBT selection of a synchronous IH circuit of claim 1, wherein the second switch unit comprises a comparator, of which a positive (+) input terminal is connected to the on/off signal for the second IGBT driving unit input from the microprocessor, a negative (-) input terminal is connected to a reference voltage, and an output stage is connected to the output stage of the second IGBT driving unit.
PCT/KR2007/003426 2006-12-27 2007-07-13 Apparatus for controlling igbt selection of synchronous induction heating circuit WO2008078869A1 (en)

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CN105987410A (en) * 2015-03-04 2016-10-05 佛山市顺德区美的电热电器制造有限公司 Electric cooker and heating control device of electric cooker
CN108631761A (en) * 2017-03-16 2018-10-09 佛山市顺德区美的电热电器制造有限公司 The control device and method of electromagnetic heating system and power switch tube

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WO2010069616A1 (en) * 2008-12-19 2010-06-24 BSH Bosch und Siemens Hausgeräte GmbH Cook-top having at least three heating zones
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CN108631761A (en) * 2017-03-16 2018-10-09 佛山市顺德区美的电热电器制造有限公司 The control device and method of electromagnetic heating system and power switch tube

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