WO2008072996A1 - Device for processing semiconductor plates - Google Patents
Device for processing semiconductor plates Download PDFInfo
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- WO2008072996A1 WO2008072996A1 PCT/RU2007/000084 RU2007000084W WO2008072996A1 WO 2008072996 A1 WO2008072996 A1 WO 2008072996A1 RU 2007000084 W RU2007000084 W RU 2007000084W WO 2008072996 A1 WO2008072996 A1 WO 2008072996A1
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- WIPO (PCT)
- Prior art keywords
- holders
- chamber
- additional
- vacuum chamber
- semiconductor plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Definitions
- the invention relates to a vacuum technique for processing semiconductor wafers and can be used to carry out the plasma etching process of semiconductor wafers or the process of applying dielectric films and sputtering metals.
- a known installation for processing semiconductor wafers by plasma etching and / or applying dielectric films to them includes a vacuum chamber and a lock chamber, which are separated by an airtight valve.
- a drive with holders of semiconductor plates mounted on them is placed in the lock chamber.
- the lower and upper electrodes and gas supply means are placed in the vacuum chamber; the installation also contains means (manipulator) for moving the holders from the airlock to the vacuum chamber and gripping the holders, US 4816638 C.
- the objective of this utility model is to improve the quality of the semiconductor wafer processed in the installation by reducing the number of defects on its surface when the wafer is processed by applying metal to it in combination with plasma etching and / or applying a dielectric film.
- this problem is solved due to the fact that in the installation for processing semiconductor wafers, including a vacuum and airlock chambers, coupled with a sealed slide gate valve, a lock with a holders of semiconductor wafers mounted on them is placed in the lock chamber, the lower and upper electrodes are placed in the vacuum chamber and gas supply means, while the installation also includes a manipulator of the holders of the semiconductor wafers and the capture of these holders, new is that the installation is equipped with a single vacuum chamber, coupled to the lock chamber by means of an additional slide gate valve, while an additional manipulator is placed in the lock chamber, and an electron-beam metal evaporator is installed in the additional vacuum chamber.
- the applicant has not identified sources containing information on technical solutions identical to this utility model, which allows us to conclude that it meets the criterion of "novelty" (N).
- FIG. 1 depicts: in FIG. 1 - installation in plan; in FIG. 2 is a section A-A in FIG. one ; in FIG. 3 is a section B-B in FIG. one.
- the installation includes a vacuum chamber 1 and a lock chamber 2, separated by a sealed slide gate valve 3.
- a storage 4 with holders 5 of semiconductor plates 6 attached to them 6.
- the vacuum chamber 1 there are lower 7 and upper 8 electrodes and gas supply means 9, with the help of which the semiconductor wafers are etched or dielectric films are deposited on them.
- the tool 9 is a fitting.
- the heater 10 is used to heat the semiconductor wafer.
- the installation comprises a manipulator 11 of the holders 5 with semiconductor plates 6, which carries out the movement of the holders 5 from the airlock 2 to the vacuum camera 1 and back.
- a grip 12 is fixed on the upper electrode 8 for fixing the holders 5 with semiconductor plates 6.
- the grip is a rod parallel to each other with a drive 13 and consoles, on which the holders 5 with plates 6 are supported.
- a window is intended for input and output into the lock chamber 2 of the holders 5 14 with a sealed cover (not shown).
- the installation is equipped with an additional vacuum chamber 15, coupled to the lock chamber 2 by means of an additional slide gate valve 16.
- An additional manipulator 17 is placed in the lock chamber 2, and an electron-beam evaporator 18 of metals is installed in the additional vacuum chamber 15.
- Installation works as follows. Open the window 14 of the lock chamber 2, while the slide gate valve 3 is closed, and the required number of holders 5 with semiconductor wafers 6 are installed on the drive 4, then the window 14 is closed. Using the drives 13, the grips 12 are lowered to the position necessary for the holder 5 to be installed. Using the manipulator 11, one of the holders 5 with the semiconductor wafer 6 is removed from the drive 4 and the slide gate valve 3 is opened. Using the manipulator 11, the holder 5 with the semiconductor wafer 6 is moved to the vacuum chamber 1 and placed in the grippers 12. Then the manipulator 11 is moved to the gateway camera 2; close the slide gate valve 3. Then, using the drives 13, the holder 5 mounted in the grippers 12 with the semiconductor wafer 6 is lifted to the required height for the process.
- the heater 10 Turn on the heater 10 and set the desired temperature of the semiconductor wafer.
- the gas supply means 9 nozzle
- the gas necessary for the process is supplied to the vacuum chamber 1.
- Voltage is applied to the electrodes 7, 8 and the plasma etching process, or the process of formation of dielectric films, or both processes are performed in series.
- the drives 12 lower the grippers 12 to the position necessary for removing the holder, then open the slide gate valve 3, use the manipulator 11 to remove the holder 5 with the semiconductor plate 6 from the grippers 12 and move it from the vacuum chamber 1 to the lock chamber 2; close the slide gate valve 3, the holder 5 with the semiconductor wafer 6 is installed back onto the drive 4 and the next holder 5 with the semiconductor wafer 6 is removed from the drive.
- the slide gate 16 is opened using the additional manipulator 17 move one of the holders 5 into an additional vacuum chamber 15 and install on the grippers 19 provided with a drive 20.
- the semiconductor wafer 6 mounted on the holder 5 is heated with a heater 21 to the set temperature.
- the metal is deposited onto a semiconductor wafer 6 using an electron beam evaporator 18 of metals.
- At the end of the processing of all semiconductor wafers 6 they are removed from the lock chamber 2 through the window 14 with the shutter 16 closed.
- the installation is made in the factory using conventional equipment and known materials, which determines, according to the applicant, its compliance with the criterion of industrial applicability)) (IA).
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to vacuum engineering and can be used for processing semiconductor plates and for carrying out a process for the plasma etching of semiconductor plates or a process for applying dielectric films and metal sputtering. The inventive device for processing semiconductor plates comprises vacuum and sluice chambers which are mated by means of a sealed sliding shutter, wherein a storage provided with holders of semiconductor plates arranged thereon is placed in the sluice chamber and lower and top electrodes and a gas supply means are placed in the vacuum chamber. The device also comprises a manipulator for handling the holders of the semiconductor plates and the grip of the holders of the semiconductor plates and is characterised in that it is also provided with an additional vacuum chamber which is mated with the sluice chamber by means of an additional sliding shutter, wherein an additional manipulator is placed in the sluice chamber and the additional vacuum chamber comprises an electron-beam metal evaporator which is arranged therein. Said invention makes it possible to improve the quality of a semiconductor plate processed by means of the inventive device by reducing the number of defects when the process for applying a metal thereon is combined with the plasma etching and/or the application of a dielectric film.
Description
Установка для обработки полупроводниковых пластин Semiconductor wafer processing plant
Область техникиTechnical field
Полезная модель относится к вакуумной технике для обработки полупроводниковых пластин и может быть использована для проведения процесса плазменного травления полупроводниковых пластин или процесса нанесения диэлектрических пленок и напыления металлов.The invention relates to a vacuum technique for processing semiconductor wafers and can be used to carry out the plasma etching process of semiconductor wafers or the process of applying dielectric films and sputtering metals.
Предшествующий уровень техникиState of the art
Известна установка для плазменного травления полупроводниковых пластин, содержащая вакуумную камеру, электроды, устройство подачи газа для формирования плазмы в вакуумной камере и держатель полупроводниковых пластин, US 5717294 А.A known installation for plasma etching of semiconductor wafers containing a vacuum chamber, electrodes, a gas supply device for forming a plasma in a vacuum chamber and a holder of semiconductor wafers, US 5717294 A.
Недостатком этой установки является отсутствие шлюзовой камеры, что является причиной разгерметизации вакуумной камеры
при вводе в нее каждого отдельного держателя с полупроводниковой пластиной. Это приводит не только к увеличению продолжительности процесса, но и к интенсивному загрязнению вакуумной камеры. Кроме того, эта установка не позволяет осуществить напыление металла на полупроводниковую пластину.The disadvantage of this installation is the lack of a lock chamber, which is the reason for the depressurization of the vacuum chamber when you enter into it each individual holder with a semiconductor wafer. This leads not only to an increase in the duration of the process, but also to intense pollution of the vacuum chamber. In addition, this installation does not allow the deposition of metal on a semiconductor wafer.
Известна установка для обработки полупроводниковых пластин путем плазменного травления и/или нанесения на них диэлектрических пленок. Установка включает вакуумную камеру и шлюзовую камеру, которые разделены герметичной задвижкой. В шлюзовой камере размещен накопитель с держателями укрепленных на них полупроводниковых пластин. В вакуумной камере размещены нижний и верхний электроды и средство подачи газа; установка также содержит средство (манипулятор) для перемещения держателей из шлюзовой камеры в вакуумную камеру и захват держателей, US 4816638 С.A known installation for processing semiconductor wafers by plasma etching and / or applying dielectric films to them. The installation includes a vacuum chamber and a lock chamber, which are separated by an airtight valve. A drive with holders of semiconductor plates mounted on them is placed in the lock chamber. The lower and upper electrodes and gas supply means are placed in the vacuum chamber; the installation also contains means (manipulator) for moving the holders from the airlock to the vacuum chamber and gripping the holders, US 4816638 C.
Данная установка принята в качестве прототипа настоящей полезной модели. Её недостатком является то обстоятельство, что в ней наряду с осуществлением процессов плазменного травления полупроводниковых пластин и/или нанесения на них диэлектрических пленок, невозможно провести процесс напыления металла на поверхность полупроводниковой пластины. Для осуществления последнего процесса после плазменного травления и/или нанесения на них диэлектрических пленок, пластины приходится извлекать из установки в атмосферу и перемещать в специальную камеру для напыления металла. При этом на
поверхность полупроводниковой пластины оседают взвешенные в воздухе частицы, что существенно ухудшает ее качество ввиду образования дефектов на ее поверхности.This installation is adopted as a prototype of this utility model. Its disadvantage is the fact that, along with the implementation of plasma etching of semiconductor wafers and / or applying dielectric films on them, it is impossible to carry out the process of metal deposition on the surface of a semiconductor wafer. To carry out the latter process after plasma etching and / or applying dielectric films on them, the plates have to be removed from the installation into the atmosphere and moved to a special chamber for metal deposition. Moreover, on particles suspended in the air settle on the surface of the semiconductor wafer, which significantly impairs its quality due to the formation of defects on its surface.
Раскрытие полезной моделиUtility Model Disclosure
Задачей настоящей полезной модели является повышение качества обрабатываемой в установке полупроводниковой пластины за счет уменьшения количества дефектов её поверхности в случае, когда осуществляется процесс обработки пластины путем нанесения на нее металла в сочетании с плазменным травлением и/или нанесением диэлектрической пленки.The objective of this utility model is to improve the quality of the semiconductor wafer processed in the installation by reducing the number of defects on its surface when the wafer is processed by applying metal to it in combination with plasma etching and / or applying a dielectric film.
Согласно полезной модели эта задача решается за счёт того, что в установке для обработки полупроводниковых пластин, включающей вакуумную и шлюзовую камеры, сопряженные герметичной шиберной задвижкой, в шлюзовой камере размещен накопитель с держателями укрепленных на них полупроводниковых пластин, в вакуумной камере размещены нижний и верхний электроды и средство подачи газа, при этом установка также содержит манипулятор держателей полупроводниковых пластин и захват этих держателей, новым является то, что установка снабжена дополнительной вакуумной камерой, сопряженной со шлюзовой камерой посредством дополнительной шиберной задвижки, при этом в шлюзовой камере размещен дополнительный манипулятор, а в дополнительной вакуумной камере установлен электронно-лучевой испаритель металлов.
Заявителем не выявлены источники, содержащие информацию о технических решениях, идентичных настоящей полезной модели, что позволяет сделать вывод о ее соответствии критерию «нoвизнa» (N).According to the utility model, this problem is solved due to the fact that in the installation for processing semiconductor wafers, including a vacuum and airlock chambers, coupled with a sealed slide gate valve, a lock with a holders of semiconductor wafers mounted on them is placed in the lock chamber, the lower and upper electrodes are placed in the vacuum chamber and gas supply means, while the installation also includes a manipulator of the holders of the semiconductor wafers and the capture of these holders, new is that the installation is equipped with a single vacuum chamber, coupled to the lock chamber by means of an additional slide gate valve, while an additional manipulator is placed in the lock chamber, and an electron-beam metal evaporator is installed in the additional vacuum chamber. The applicant has not identified sources containing information on technical solutions identical to this utility model, which allows us to conclude that it meets the criterion of "novelty" (N).
Краткое описание чертежейBrief Description of the Drawings
Сущность полезной модели поясняется чертежами, где изображено: на фиг. 1 - установка в плане; на фиг. 2 - разрез A-A на фиг. 1 ; на фиг. 3 - разрез B-B на фиг. 1.The essence of the utility model is illustrated by drawings, which depict: in FIG. 1 - installation in plan; in FIG. 2 is a section A-A in FIG. one ; in FIG. 3 is a section B-B in FIG. one.
Лучший вариант осуществления полезной моделиThe best option for implementing a utility model
Установка включает вакуумную камеру 1 и шлюзовую камеру 2, разделенные герметичной шиберной задвижкой 3. В шлюзовой камере 2 размещен накопитель 4 с держателями 5 укрепленных ни них полупроводниковых пластин 6. В вакуумной камере 1 размещены нижний 7 и верхний 8 электроды и средство 9 подачи газа, с помощью которых осуществляется травление полупроводниковых пластин или нанесение на них диэлектрических пленок. Средство 9 представляет собой штуцер. Нагреватель 10 служит для нагрева полупроводниковой пластины. Установка содержит манипулятор 11 держателей 5 с полупроводниковыми пластинами 6, который осуществляет перемещение держателей 5 из шлюзовой камеры 2 в вакуумную
камеру 1 и обратно. На верхнем электроде 8 укреплен захват 12 для фиксации держателей 5 с полупроводниковыми пластинами 6. Захват представляет собой параллельные друг другу штанги с приводом 13 и консолями, на которые опираются держатели 5 с пластинами 6. Для ввода и вывода в шлюзовую камеру 2 держателей 5 предназначено окно 14 с герметичной крышкой (не показана). Установка снабжена дополнительной вакуумной камерой 15, сопряженной со шлюзовой камерой 2 посредством дополнительной шиберной задвижки 16. В шлюзовой камере 2 размещен дополнительный манипулятор 17, в дополнительной вакуумной камере 15 установлен электронно- лучевой испаритель 18 металлов.The installation includes a vacuum chamber 1 and a lock chamber 2, separated by a sealed slide gate valve 3. In the lock chamber 2 there is a storage 4 with holders 5 of semiconductor plates 6 attached to them 6. In the vacuum chamber 1 there are lower 7 and upper 8 electrodes and gas supply means 9, with the help of which the semiconductor wafers are etched or dielectric films are deposited on them. The tool 9 is a fitting. The heater 10 is used to heat the semiconductor wafer. The installation comprises a manipulator 11 of the holders 5 with semiconductor plates 6, which carries out the movement of the holders 5 from the airlock 2 to the vacuum camera 1 and back. A grip 12 is fixed on the upper electrode 8 for fixing the holders 5 with semiconductor plates 6. The grip is a rod parallel to each other with a drive 13 and consoles, on which the holders 5 with plates 6 are supported. A window is intended for input and output into the lock chamber 2 of the holders 5 14 with a sealed cover (not shown). The installation is equipped with an additional vacuum chamber 15, coupled to the lock chamber 2 by means of an additional slide gate valve 16. An additional manipulator 17 is placed in the lock chamber 2, and an electron-beam evaporator 18 of metals is installed in the additional vacuum chamber 15.
Установка работает следующим образом. Открывают окно 14 шлюзовой камеры 2, при этом шиберная задвижка 3 закрыта, и устанавливают на накопитель 4 необходимое количество держателей 5 с полупроводниковыми пластинами 6, после чего закрывают окно 14. С помощью приводов 13 опускают захваты 12 в необходимое для установки держателя 5 положение. С помощью манипулятора 11 снимают с накопителя 4 один из держателей 5 с полупроводниковой пластиной 6 и открывают шиберную задвижку 3. С помощью манипулятора 11 перемещают держатель 5 с полупроводниковой пластиной 6 в вакуумную камеру 1 и размещают в захватах 12. После этого перемещают манипулятор 11 в шлюзовую камеру 2; закрывают шиберную задвижку 3. Затем поднимают с помощью приводов 13 установленный в захватах 12 держатель 5 с полупроводниковой пластиной 6 на необходимую для проведения процесса высоту. Включают нагреватель 10 и
устанавливают требуемую температуру полупроводниковой пластины. Через средство 9 подачи газа (штуцер) подают необходимый для процесса газ в вакуумную камеру 1. Подают напряжение на электроды 7, 8 и проводят процесс плазменного травления, или процесс образования диэлектрических пленок, или оба процесса последовательно. После окончания процесса с помощью приводов 13 опускают захваты 12 в необходимое для снятия держателя положение, после этого открывают шиберную задвижку 3, с помощью манипулятора 11 снимают держатель 5 с полупроводниковой пластиной 6 с захватов 12 и перемещают его из вакуумной камеры 1 в шлюзовую камеру 2; закрывают шиберную задвижку 3, держатель 5 с полупроводниковой пластиной 6 устанавливают обратно на накопитель 4 и снимают с накопителя следующий держатель 5 с полупроводниковой пластиной 6. Когда все пластины 6 будут подвергнуты требуемой обработке в камере 1, открывают шиберную задвижку 16, с помощью дополнительного манипулятора 17 перемещают один из держателей 5 в дополнительную вакуумную камеру 15 и устанавливают на захваты 19, снабженные приводом 20. Полупроводниковую пластину 6, установленную на держателе 5, нагревают с помощью нагревателя 21 до заданной температуры. Напыление на полупроводниковую пластину 6 металла осуществляют с помощью электронно-лучевого испарителя 18 металлов. По окончании обработки всех полупроводниковых пластин 6 их извлекают из шлюзовой камеры 2 через окно 14 при закрытой задвижке 16.Installation works as follows. Open the window 14 of the lock chamber 2, while the slide gate valve 3 is closed, and the required number of holders 5 with semiconductor wafers 6 are installed on the drive 4, then the window 14 is closed. Using the drives 13, the grips 12 are lowered to the position necessary for the holder 5 to be installed. Using the manipulator 11, one of the holders 5 with the semiconductor wafer 6 is removed from the drive 4 and the slide gate valve 3 is opened. Using the manipulator 11, the holder 5 with the semiconductor wafer 6 is moved to the vacuum chamber 1 and placed in the grippers 12. Then the manipulator 11 is moved to the gateway camera 2; close the slide gate valve 3. Then, using the drives 13, the holder 5 mounted in the grippers 12 with the semiconductor wafer 6 is lifted to the required height for the process. Turn on the heater 10 and set the desired temperature of the semiconductor wafer. Through the gas supply means 9 (nozzle), the gas necessary for the process is supplied to the vacuum chamber 1. Voltage is applied to the electrodes 7, 8 and the plasma etching process, or the process of formation of dielectric films, or both processes are performed in series. After the end of the process, the drives 12 lower the grippers 12 to the position necessary for removing the holder, then open the slide gate valve 3, use the manipulator 11 to remove the holder 5 with the semiconductor plate 6 from the grippers 12 and move it from the vacuum chamber 1 to the lock chamber 2; close the slide gate valve 3, the holder 5 with the semiconductor wafer 6 is installed back onto the drive 4 and the next holder 5 with the semiconductor wafer 6 is removed from the drive. When all the plates 6 are subjected to the required processing in the chamber 1, the slide gate 16 is opened using the additional manipulator 17 move one of the holders 5 into an additional vacuum chamber 15 and install on the grippers 19 provided with a drive 20. The semiconductor wafer 6 mounted on the holder 5 is heated with a heater 21 to the set temperature. The metal is deposited onto a semiconductor wafer 6 using an electron beam evaporator 18 of metals. At the end of the processing of all semiconductor wafers 6 they are removed from the lock chamber 2 through the window 14 with the shutter 16 closed.
Таким образом, вся обработка полупроводниковых пластин происходит в изолированном от атмосферы объеме, что
предотвращает оседание на них взвешенных в воздухе частиц и, соответственно, улучшает качество продукции.Thus, all processing of semiconductor wafers occurs in a volume isolated from the atmosphere, which prevents sedimentation of particles suspended in the air on them and, accordingly, improves product quality.
Промышленная применимостьIndustrial applicability
Установка изготавливается в заводских условиях с применением обычного оборудования и известных материалов, что обусловливает, по мнению заявителя, ее соответствие критерию промышленная применимость)) (IA).
The installation is made in the factory using conventional equipment and known materials, which determines, according to the applicant, its compliance with the criterion of industrial applicability)) (IA).
Claims
Формула полезной моделиUtility Model Formula
Установка для обработки полупроводниковых пластин, включающая вакуумную и шлюзовую камеры, сопряженные герметичной шиберной задвижкой, в шлюзовой камере размещен накопитель с держателями укрепленных на них полупроводниковых пластин, в вакуумной камере размещены нижний и верхний электроды и средство подачи газа, при этом установка также содержит манипулятор держателей полупроводниковых пластин и захват этих держателей, о т л и ч аю щ ая с я тем, что снабжена дополнительной вакуумной камерой, сопряженной со шлюзовой камерой посредством дополнительной шиберной задвижки, при этом в шлюзовой камере размещен дополнительный манипулятор, а в дополнительной вакуумной камере установлен электронно-лучевой испаритель металлов.
An apparatus for processing semiconductor wafers, including a vacuum and airlock chambers, coupled with a sealed slide gate valve, a storage chamber with holders of semiconductor wafers mounted on them is placed in the airlock chamber, the lower and upper electrodes and a gas supply means are placed in the vacuum chamber, while the apparatus also contains a manipulator of holders semiconductor wafers and the capture of these holders, which is connected with the fact that it is equipped with an additional vacuum chamber, interfaced with the lock chamber by additional slide gate valve, while an additional manipulator is placed in the lock chamber, and an electron-beam metal evaporator is installed in the additional vacuum chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2006146031 | 2006-12-15 | ||
| RU2006146031 | 2006-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008072996A1 true WO2008072996A1 (en) | 2008-06-19 |
Family
ID=39511925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2007/000084 WO2008072996A1 (en) | 2006-12-15 | 2007-02-22 | Device for processing semiconductor plates |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2008072996A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816638A (en) * | 1987-02-20 | 1989-03-28 | Anelva Corporation | Vacuum processing apparatus |
| JPH06181249A (en) * | 1992-12-14 | 1994-06-28 | Ebara Corp | Substrate conveying equipment |
| JPH09104986A (en) * | 1992-06-24 | 1997-04-22 | Anelva Corp | Treatment of substrate and cvd treatment method |
| RU2133521C1 (en) * | 1998-02-16 | 1999-07-20 | Александрова Ариадна Тимофеевна | Device for locking |
-
2007
- 2007-02-22 WO PCT/RU2007/000084 patent/WO2008072996A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816638A (en) * | 1987-02-20 | 1989-03-28 | Anelva Corporation | Vacuum processing apparatus |
| JPH09104986A (en) * | 1992-06-24 | 1997-04-22 | Anelva Corp | Treatment of substrate and cvd treatment method |
| JPH06181249A (en) * | 1992-12-14 | 1994-06-28 | Ebara Corp | Substrate conveying equipment |
| RU2133521C1 (en) * | 1998-02-16 | 1999-07-20 | Александрова Ариадна Тимофеевна | Device for locking |
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