WO2008066218A1 - Wireless communication system having cmos structure and method of manufacturing the same - Google Patents

Wireless communication system having cmos structure and method of manufacturing the same Download PDF

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Publication number
WO2008066218A1
WO2008066218A1 PCT/KR2007/000928 KR2007000928W WO2008066218A1 WO 2008066218 A1 WO2008066218 A1 WO 2008066218A1 KR 2007000928 W KR2007000928 W KR 2007000928W WO 2008066218 A1 WO2008066218 A1 WO 2008066218A1
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WIPO (PCT)
Prior art keywords
signal
output
frequency
transmitter
filter
Prior art date
Application number
PCT/KR2007/000928
Other languages
French (fr)
Inventor
Hyo-Soon Kang
Kwang-Hyun Lee
Woo-Young Choi
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Industry-Academic Cooperation Foundation, Yonsei University
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Application filed by Industry-Academic Cooperation Foundation, Yonsei University filed Critical Industry-Academic Cooperation Foundation, Yonsei University
Publication of WO2008066218A1 publication Critical patent/WO2008066218A1/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
    • H04B1/1018—Means associated with receiver for limiting or suppressing noise or interference noise filters connected between the power supply and the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators

Definitions

  • the present invention relates, in general, to a wireless communication system and, more particularly, to a wireless communication system in which the transmitter and receiver of the wireless communication system are integrated into a single chip through a Complementary Metal Oxide
  • CMOS complementary metal-oxide-semiconductor
  • WLAN Wireless Personal Area Network
  • the standardization of such a WPAN has been carried out by the IEEE 802.15 Working Group (WG) under the IEEE 802 Standards Committee, and the aim of the IEEE 802.15 WG is to establish a short-distance wireless communication technology between portable devices and mobile devices.
  • the IEEE 802.15c WPAN subcommittee is working on the standardization of millimeter waves around 60 GHz.
  • Millimeter wave communication can solve the problems with microwave communication, related to the saturation of bandwidth.
  • a more robust and stable transmission and reception device is required to commercialize millimeter wave communication.
  • FIG. 1 is a diagram showing an example of atypical wireless communication system.
  • the wireless communication system includes a transmitter 110 and a receiver 120.
  • the transmitter 110 includes a mixer 112 for performing frequency conversion by mixing an input signal which is to be transmitted, and the output signal of a local oscillator 114; a filter 116 for eliminating noise from the output signal of the mixer 112; and an amplifier 118 for amplifying the output signal of the filter 116 and transmitting the amplified signal.
  • the above-described transmitter 110 generates a frequency up-converted output signal or a frequency down-converted output signal according to the oscillation frequency of the signal output from the local oscillator 114, and transmits the frequency up-converted signal or the frequency down- converted signal.
  • the receiver 120 includes an amplifier 122 for receiving signals over the air and amplifying the received signals; a filter 124 for eliminating noise from the output signal of the amplifier 122; and a mixer 126 for processing the output signal of a local oscillator 128 and the output signal of the filter 124 to restore an original signal, thus generating an output signal.
  • the transmitter 110 of the above-described wireless communication system must use a Phase Locked Oscillator (PLO) to enable millimeter wave communication.
  • PLO Phase Locked Oscillator
  • FIGS. 2A and 2B are diagrams showing other examples of the typical wireless communication system.
  • a transmitter 210 includes a mixer 212 for receiving an input signal which is to be transmitted and the output signal of a local oscillator 214, and performing frequency conversion by mixing the two signals; a filter 216 for eliminating noise from the output signal of the mixer 212; and an amplifier 218 for amplifying and transmitting the output signal of the filter 216 and the output signal of the local oscillator 214, and thus the output signal of the transmitter 210 includes a fiequency-converted signal and an oscillation signal.
  • a receiver 220 includes an amplifier 222, a first filter 224, a square law detector 226 and a second filter 228. Accordingly, the square law detector 226 is operated to restore an original signal from a frequency-converted signal and an oscillation signal, and thus an output signal is generated from the receiver 220.
  • a transmitter 210-1 includes a mixer 212 for receiving an input signal which is to be transmitted and the output signal of a local oscillator 214, and performing frequency conversion by mixing the two signals; a filter 216 for eliminating noise from the output signal of the mixer 212; and an amplifier 218 for amplifying the output signal of the filter 216 and transmitting the amplified signal.
  • the mixer 212 provided in the transmitter 210-1 does not suppress the local oscillation signal.
  • the filter 216 eliminates noise from the local oscillation signal and the frequency-converted signal and generates an output signal.
  • the oscillation signal is transmitted along with the frequency-converted signal, so there is an advantage in that an original signal can be accurately detected by the receivers 220 even when the performance of each of the local oscillators 214, which are provided in the respective transmitters 210, is not guaranteed. Furthermore, there are advantages in that the nianufacturing cost thereof is economical, phase noise and frequency offset problems can be mitigated, and the stability thereof is excellent
  • CMOS complementary metal-oxide-semiconductor
  • a current transmitter must use the mixer separately, so there is a disadvantage in that the simplification of the construction thereof is limited, with the result that the structure thereof is complicated and thus a high cost is incurred.
  • an object of the present invention is to provide a wireless communication system that is configured to have a serf-heterodyne structure and is integrated in a single chip, and a method of rnanufacturing the wireless communication system.
  • Another object of the present invention is to construct the transmitter of the wireless communication system using an Mpact Avalanche Transit Time (IMPATT) diode having a CMOS structure, thus reducing the cost of manufacturing the wireless communication system.
  • a further object of the present invention is to integrate an oscillator and a mixer, which are used for the transmitter of the wireless communication system, into a single body using an IMPATT diode self-oscillating mixer having a CMOS structure, thus simplifying the structure of the wireless communication system.
  • the present invention provides a wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal; wherein the transmitter comprises an IMPATT diode oscillator that outputs an oscillation signal having a preset oscillation frequency; a mixer that receive the input signal and the oscillation signal, which is output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer, and an amplifier that amplifies the frequency-converted signal output from the filter and the oscillation signal output from the IMPATT diode oscillator, and transmits the amplified signals via an antenna
  • the present invention provides a wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal; wherein the transmitter comprises an IMPATT diode oscillator that outputs a signal having a preset oscillation frequency; a mixer that receives the input signal and the oscillation signal, which is output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer, and an amplifier that amplifies the frequency-converted signal output from the filter, and transmits the amplified signal via an antenna.
  • the transmitter comprises an IMPATT diode oscillator that outputs a signal having a preset oscillation frequency; a mixer that receives the input signal and the oscillation signal, which is output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer, and an
  • the present invention provides a method of manufacturing a wireless communication system having a CMOS structure, the method comprising the steps of providing a semiconductor substrate; and forming an IMPATT diode, a mixer, a filter and an amplifier in the semiconductor substrate; wherein the IMAPTT diode is formed through the steps of forming an n- well in a p-type substrate; forming a p+ junction region and an n+ junction region that are spaced apart from each other in a predetermined region of the n-well by a preset distance; and forming contact parts on the p+ junction region and the n+ junction, respectively.
  • the IMPATT diode oscillator manufactured through a CMOS process, is used as a local oscillator, so that each of the transmitters for the wireless communication system can be integrated into a single chip. Therefore, the construction of each transmitter can be simplified and the design cost thereof can also be minimized.
  • the MPATT diode serf-oscillating mixer when used, it functions as both a local oscillator and a mixer, so the construction of each of the transmitters for the wireless communication system can be further simplified.
  • FIG. 1 is a diagram showing an example of atypical wireless communication system
  • FIGS. 2A and 2B are diagrams showing other examples of the typical wireless communication system
  • FIGS. 3A and 3B are diagrams showing the construction of transmitters for a wireless communication system having a CMOS structure, according to an embodiment of the present invention
  • FIGS. 4A and 4B are diagrams showing the construction of transmitters for the -wireless communication system having a CMOS structure, according to another embodiment of the present invention
  • FIGS. 5A and 5B are diagrams illustrating an example of an IMPATT diode that is applied to the present invention
  • FIGS. 6A and 6B are diagrams illustrating another example of the IMPATT diode that is applied to the present invention.
  • FIGS. 7A and 7B are diagrams showing the construction of receivers for the wireless communication systems having a CMOS structure, which are applied to the present invention.
  • FIG. 8 is a sectional diagram of a Schottky diode that is applied to the present invention.
  • FIGS. 3A and 3B are diagrams showing the construction of transmitters for a wireless communication system having a CMOS structure, according to an embodiment of the present invention.
  • the transmitter 10 of the wireless communication system includes an IMPATT diode oscillator 14 that outputs a signal having a preset oscillation frequency; a mixer 12 that receives an input signal which is to be transmitted to a receiver and the oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion; a filter 16 that eliminates noise from the output signal of the mixer 12; and an amplifier 18 that amplifies the output signal of the filter 16 and the output signal of the IMPATT diode oscillator 14, and transmits the amplified signals via an antenna.
  • an IMPATT diode oscillator 14 that outputs a signal having a preset oscillation frequency
  • a mixer 12 that receives an input signal which is to be transmitted to a receiver and the oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion
  • a filter 16 that eliminates noise from the output signal of the mixer 12
  • an amplifier 18 that amplifies the output signal of the filter 16 and the output signal of the IMPATT dio
  • the IMPATT diode 14 has a negative resistance in a microwave band, and is configured to have a simple structure and a high output operational frequency so that it has characteristics appropriate for application to transmitters for millimeter wave communication, such as WPAN communication.
  • the transmitter may be integrated into a single chip.
  • the mixer 12, the filter 16 and the amplifier 18 are implemented through the step of forming junction regions in a semiconductor substrate and forming CMOS transistors.
  • the transmitter 10 has a self-heterodyne structure, that is, the frequency- converted signal and the oscillation signal are simultaneously output through the amplifier 18 so that the original signal can be more accurately detected by using the oscillation signal that is separately received by the receiver.
  • a transmitter 10-1 shown in FIG. 3B is a modified example of the transmitter shown in FTG. 3A, and includes an IMPATT diode oscillator 14 configured to outputs a signal having a preset oscillation frequency; a mixer 12 that receives an input signal which is to be transmitted to a receiver and an oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion; a filter 16 that eliminates noise from the output signal of the mixer 12; and an amplifier 18 that amplifies the output signal of the filter 16 and transmits the amplified signal via an antenna.
  • an IMPATT diode oscillator 14 configured to outputs a signal having a preset oscillation frequency
  • a mixer 12 that receives an input signal which is to be transmitted to a receiver and an oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion
  • a filter 16 that eliminates noise from the output signal of the mixer 12
  • an amplifier 18 that amplifies the output signal of the filter 16 and transmits the amp
  • the mixer 12 in the transmitter of FTG. 3B does not suppress the local oscillation signal.
  • the filter 16 eliminates noise from the local oscillation signal and the frequency-converted signal, and outputs an output signal.
  • FIGS. 4A and 4B are diagrams showing the construction of transmitters for the wireless communication system having a CMOS structure, according to another embodiment of the present invention.
  • an IMPATT diode may operate as an IMPATT diode self- oscillating mixer 20 that can perform the functions of both a mixer and an oscillator.
  • an input port is separately provided to the IMPATT diode, and a signal which is to be transmitted is input through the input port. Accordingly, in the transmitter 10-2 shown in FIG.
  • a frequency-converted signal and an oscillation signal are output from the MPATT diode self-oscillating mixer 20, noise is eliminated from the frequency-converted signal and the oscillation signal by the filter 16, the output signal of the filter 16 and the output signal of the IMPATT self-oscillating mixer 20 are input to an amplifier 18, and the frequency-converted signal and the oscillation signal are amplified by the amplifier 18 and then transmitted.
  • the MPATT diode seh°-oscillating mixer 20 functions as a mixer as well as an oscillator, so that a transmitter 10-2 having a simpler structure can be implemented.
  • An MPATT diode oscillator is divided into a part to which a Direct Current (DC) bias is applied, and an output part through which an oscillation signal is output In this case, both the
  • the application of the input signal to the IMPATT diode oscillator can be realized by constructing the separate input port as well as the bias-T, and can also be realized using a circulator provided to an output port side of the IMPATT diode.
  • the transmitter 10-3 of FTG. 4B is a modified example of the transmitter of FlG. 4A.
  • a fiequency-converted signal and an oscillation signal are output from an
  • FIGS. 5 A and 5B are diagrams illustrating an example of an IMPATT diode that is applied to the present invention.
  • an n-well 320 is formed in a p-type substrate 310, and a p+ junction region 330 and an n+ junction region 340 are formed in the respective predetermined regions of the n-well 320 so as to be spaced apart from each other by a preset distance. Furthermore, contact parts 350 and 360 are formed on the p+ junction region 330 and the n+ junction region 340, respectively.
  • the IMPATT diode, formed as described above, has an avalanche region, a drift region and an inactivated region, as shown in FlG. 5B.
  • the IMPATT diode self-oscillating mixer which can output the frequency-converted signal obtained using the oscillation frequency, can be implemented without additionally providing a separate mixer, as shown in FIG. 4A or 4B.
  • the frequency-converted signal and the oscillation signal, which are output from the IMPATT diode self-oscillating mixer, are transmitted through the amplifier.
  • FIGS. 6A and 6B are diagrams illustrating another example of the IMPATT diode that is applied to the present invention.
  • a p+ junction region 330 and an n+ junction region 340 are formed on the respective predetermined regions of a p-type substrate 310. Furthermore, contact parts 350 and 360 are formed on the p+ junction region 330 and the n+ junction region 340, respectively.
  • the IMPATT diode, formed as described above, has an avalanche region, a drift region and an inactivated region, as shown in FTG. 6B.
  • the IMPATT diode self-oscillating mixer which can output the frequency- converted signal obtained using the oscillation frequency, can be implemented without additionally providing a separate mixer, as shown in FTG. 4A or 4B.
  • the frequency-converted signal and the oscillation signal, which are output from the IMPATT diode self-oscillating mixer, are transmitted through the amplifier.
  • FIGS. 7A and TB show the construction of receivers for the wireless communication systems having a CMOS structure, which are applied to the present invention.
  • the receiver 20 applied to the present invention includes an amplifier 22 configure to amplify a signal received from a transmitter, and a Schottky diode 24 that eliminates noise from the output signal of the amplifier 22 and process the amplified signal to restore an original signal using an oscillation signal, thus generating an output signal.
  • FIG. 7B is a diagram showing the construction of another receiver for the wireless communication systems having a CMOS structure, which is applied to the present invention.
  • the receiver 20-1 of the present embodiment includes an amplifier 22, a first filter 26 that eliminates noise from the output signal of the amplifier 22, a Schottky diode 24, and a second filter 28 that eliminates noise from the output signal of the Schottky diode 24.
  • the Schottky diode 24 restores the output signal of the first filter 26 to an original signal using an oscillation signal, and outputs the restored signal.
  • the receiver 20-1 shown in FIG. TB is also integrated into a single chip through a CMOS process.
  • FIG. 8 is a sectional diagram of a Schottky diode that is applied to the present inventioa
  • an n-well region 420 is formed in a p-type substrate 410, and then two pairs of Shallow Trench Isolation (SIT) layers 430 are formed in the n-well region 420 so as to be spaced apart from each other by a predetermined distance.
  • SIT Shallow Trench Isolation
  • n+ ions are implanted into regions between the two pairs of STI layers 430, which are adjacent to each other, and thus n+ regions are formed, but the n+ region is not formed in other regions and thus a Schottky barrier contact layer 450 is formed therein.
  • the Schottky barrier contact layer is formed between an n-well having a relatively low doping concentration, and contact metal, or between the n-well and a salicide material layer.
  • an interlayer insulation layer 440 is formed on the n+ well region 420, and is removed such that the Schottky barrier contact layer 450 is exposed
  • contact parts 460 are formed on the Schottky barrier contact layer 450, and are used as input and output terminals.
  • the above-described Schottky diode has an excellent operational speed because it is manufactured through a CMOS process, operates using majority carriers, and has a relatively small capacitance.
  • the Schottky diode has a high cutoff frequency of several hundred GHz, so that it has an excellent ability to modulate millimeter wave signals. Furthermore, a matching circuit is added to the Schottky diode, which is a nonlinear device, so that the Schottky diode can function as a square law detector.
  • a bias voltage that can maximize a square component in the I-V characteristic of the Schottky diode must be used.
  • the bias voltage at which the square component in the I-V characteristic is maximized can be found.
  • the square law detector can be implemented.
  • the above-described Schottky diode When the above-described Schottky diode is manufactured through a CMOS process, it can be easily integrated with peripheral devices, that is, the amplifier 22 and the filters 26 and 28 which are also manufactured through a CMOS process, and thus the receiver 20 can be integrated in a single chip.
  • the IMPATT diode oscillator manufactured through a CMOS process is used as a local oscillator, so that each of the transmitters for the wireless communication system can be integrated into a single chip. Therefore, the construction of each transmitter can be simplified and the design cost thereof can also be minimized.
  • the IMPATT diode self-oscillating mixer when used, it functions as both a local oscillator and a mixer, so that the construction of each of the transmitters for the wireless communication system can be further simplified.

Abstract

The wireless communication system includes a transmitter configured to transmit an input signal, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal. The transmitter includes an IMpact Avalanche Transit Time (IMPATT) diode oscillator, a mixer, a filter and an amplifier. The IMPATT diode oscillator outputs an oscillation signal having a preset oscillation frequency. The mixer receives the input signal and the oscillation signal and performs frequency conversion. The filter eliminates noise from a frequency-converted signal output from the mixer. The amplifier amplifies the frequency-converted signal output from the filter and the oscillation signal output from the IMPATT diode oscillator, and transmits the amplified signals via an antenna.

Description

[DESCRIPTION]
[Invention Title]
WIRELESS COMMUNICATION SYSTEM HAVING CMOS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
[Technical Field]
The present invention relates, in general, to a wireless communication system and, more particularly, to a wireless communication system in which the transmitter and receiver of the wireless communication system are integrated into a single chip through a Complementary Metal Oxide
Semiconductor (CMOS) process, and a method of manufacturing the wireless communication system.
[Background Art] Due to the rapid development of personal wireless data services, future wireless communication technology will evolve into the form of a single unified network that interconnects home and office devices. Accordingly, a Wireless Personal Area Network (WPAN) has become an important wireless communication network technology since the third generation thereof.
The standardization of such a WPAN has been carried out by the IEEE 802.15 Working Group (WG) under the IEEE 802 Standards Committee, and the aim of the IEEE 802.15 WG is to establish a short-distance wireless communication technology between portable devices and mobile devices. In particular, the IEEE 802.15c WPAN subcommittee is working on the standardization of millimeter waves around 60 GHz. Millimeter wave communication can solve the problems with microwave communication, related to the saturation of bandwidth. However, a more robust and stable transmission and reception device is required to commercialize millimeter wave communication.
FIG. 1 is a diagram showing an example of atypical wireless communication system. As shown in FIG. 1, the wireless communication system includes a transmitter 110 and a receiver 120. The transmitter 110 includes a mixer 112 for performing frequency conversion by mixing an input signal which is to be transmitted, and the output signal of a local oscillator 114; a filter 116 for eliminating noise from the output signal of the mixer 112; and an amplifier 118 for amplifying the output signal of the filter 116 and transmitting the amplified signal. The above-described transmitter 110 generates a frequency up-converted output signal or a frequency down-converted output signal according to the oscillation frequency of the signal output from the local oscillator 114, and transmits the frequency up-converted signal or the frequency down- converted signal.
The receiver 120 includes an amplifier 122 for receiving signals over the air and amplifying the received signals; a filter 124 for eliminating noise from the output signal of the amplifier 122; and a mixer 126 for processing the output signal of a local oscillator 128 and the output signal of the filter 124 to restore an original signal, thus generating an output signal.
The transmitter 110 of the above-described wireless communication system must use a Phase Locked Oscillator (PLO) to enable millimeter wave communication. In this case, problems occur in that it is complicated and difficult to implement the PLO and in that the manufacturing cost thereof is high.
In order to solve the problems of the above-described PLO in millimeter wave communication, a serf-heterodyne system was proposed, and is shown in FIG.2. FIGS. 2A and 2B are diagrams showing other examples of the typical wireless communication system.
As shown in FIG. 2A, a transmitter 210 includes a mixer 212 for receiving an input signal which is to be transmitted and the output signal of a local oscillator 214, and performing frequency conversion by mixing the two signals; a filter 216 for eliminating noise from the output signal of the mixer 212; and an amplifier 218 for amplifying and transmitting the output signal of the filter 216 and the output signal of the local oscillator 214, and thus the output signal of the transmitter 210 includes a fiequency-converted signal and an oscillation signal.
A receiver 220 includes an amplifier 222, a first filter 224, a square law detector 226 and a second filter 228. Accordingly, the square law detector 226 is operated to restore an original signal from a frequency-converted signal and an oscillation signal, and thus an output signal is generated from the receiver 220.
Meanwhile, as shown in HG.2B, a transmitter 210-1 includes a mixer 212 for receiving an input signal which is to be transmitted and the output signal of a local oscillator 214, and performing frequency conversion by mixing the two signals; a filter 216 for eliminating noise from the output signal of the mixer 212; and an amplifier 218 for amplifying the output signal of the filter 216 and transmitting the amplified signal.
In the modified example, the mixer 212 provided in the transmitter 210-1 does not suppress the local oscillation signal. The filter 216 eliminates noise from the local oscillation signal and the frequency-converted signal and generates an output signal.
. In the above-described self-heterodyne system, the oscillation signal is transmitted along with the frequency-converted signal, so there is an advantage in that an original signal can be accurately detected by the receivers 220 even when the performance of each of the local oscillators 214, which are provided in the respective transmitters 210, is not guaranteed. Furthermore, there are advantages in that the nianufacturing cost thereof is economical, phase noise and frequency offset problems can be mitigated, and the stability thereof is excellent
However, a current wireless communication system is not manufactured through a CMOS process, so the elements of the transmitter must be individually manufactured, and thus the elements cannot be integrated into a single body.
Furthermore, a current transmitter must use the mixer separately, so there is a disadvantage in that the simplification of the construction thereof is limited, with the result that the structure thereof is complicated and thus a high cost is incurred.
[Disclosure] [Technical Problem]
Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a wireless communication system that is configured to have a serf-heterodyne structure and is integrated in a single chip, and a method of rnanufacturing the wireless communication system.
Another object of the present invention is to construct the transmitter of the wireless communication system using an Mpact Avalanche Transit Time (IMPATT) diode having a CMOS structure, thus reducing the cost of manufacturing the wireless communication system. A further object of the present invention is to integrate an oscillator and a mixer, which are used for the transmitter of the wireless communication system, into a single body using an IMPATT diode self-oscillating mixer having a CMOS structure, thus simplifying the structure of the wireless communication system. [Technical Solution]
In order to accomplish the above objects), the present invention provides a wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal; wherein the transmitter comprises an IMPATT diode oscillator that outputs an oscillation signal having a preset oscillation frequency; a mixer that receive the input signal and the oscillation signal, which is output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer, and an amplifier that amplifies the frequency-converted signal output from the filter and the oscillation signal output from the IMPATT diode oscillator, and transmits the amplified signals via an antenna
In addition, the present invention provides a wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal; wherein the transmitter comprises an IMPATT diode oscillator that outputs a signal having a preset oscillation frequency; a mixer that receives the input signal and the oscillation signal, which is output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer, and an amplifier that amplifies the frequency-converted signal output from the filter, and transmits the amplified signal via an antenna.
In addition, the present invention provides a method of manufacturing a wireless communication system having a CMOS structure, the method comprising the steps of providing a semiconductor substrate; and forming an IMPATT diode, a mixer, a filter and an amplifier in the semiconductor substrate; wherein the IMAPTT diode is formed through the steps of forming an n- well in a p-type substrate; forming a p+ junction region and an n+ junction region that are spaced apart from each other in a predetermined region of the n-well by a preset distance; and forming contact parts on the p+ junction region and the n+ junction, respectively.
[Advantageous Effects]
According to the present invention, the IMPATT diode oscillator, manufactured through a CMOS process, is used as a local oscillator, so that each of the transmitters for the wireless communication system can be integrated into a single chip. Therefore, the construction of each transmitter can be simplified and the design cost thereof can also be minimized.
Furthermore, when the MPATT diode serf-oscillating mixer is used, it functions as both a local oscillator and a mixer, so the construction of each of the transmitters for the wireless communication system can be further simplified.
[Description of Drawings]
The above and other objects, features and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a diagram showing an example of atypical wireless communication system; FIGS. 2A and 2B are diagrams showing other examples of the typical wireless communication system;
FIGS. 3A and 3B are diagrams showing the construction of transmitters for a wireless communication system having a CMOS structure, according to an embodiment of the present invention;
FIGS. 4A and 4B are diagrams showing the construction of transmitters for the -wireless communication system having a CMOS structure, according to another embodiment of the present invention; FIGS. 5A and 5B are diagrams illustrating an example of an IMPATT diode that is applied to the present invention;
FIGS. 6A and 6B are diagrams illustrating another example of the IMPATT diode that is applied to the present invention;
FIGS. 7A and 7B are diagrams showing the construction of receivers for the wireless communication systems having a CMOS structure, which are applied to the present invention; and
FIG. 8 is a sectional diagram of a Schottky diode that is applied to the present invention.
[Best Mode]
Preferred embodiments of the present invention are described in more detail with reference to the accompanying drawings below.
FIGS. 3A and 3B are diagrams showing the construction of transmitters for a wireless communication system having a CMOS structure, according to an embodiment of the present invention.
Referring to FIG. 3 A, the transmitter 10 of the wireless communication system according to the present embodiment includes an IMPATT diode oscillator 14 that outputs a signal having a preset oscillation frequency; a mixer 12 that receives an input signal which is to be transmitted to a receiver and the oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion; a filter 16 that eliminates noise from the output signal of the mixer 12; and an amplifier 18 that amplifies the output signal of the filter 16 and the output signal of the IMPATT diode oscillator 14, and transmits the amplified signals via an antenna.
The IMPATT diode 14 has a negative resistance in a microwave band, and is configured to have a simple structure and a high output operational frequency so that it has characteristics appropriate for application to transmitters for millimeter wave communication, such as WPAN communication.
In the case where the above-described IMPATT diode 14 is manufactured through a
CMOS process, and the mixer 12, the filter 16 and the amplifier 18 are manufactured through the
CMOS process, the transmitter may be integrated into a single chip. In this case, the mixer 12, the filter 16 and the amplifier 18 are implemented through the step of forming junction regions in a semiconductor substrate and forming CMOS transistors.
Furthermore, the transmitter 10 has a self-heterodyne structure, that is, the frequency- converted signal and the oscillation signal are simultaneously output through the amplifier 18 so that the original signal can be more accurately detected by using the oscillation signal that is separately received by the receiver.
Meanwhile, a transmitter 10-1 shown in FIG. 3B is a modified example of the transmitter shown in FTG. 3A, and includes an IMPATT diode oscillator 14 configured to outputs a signal having a preset oscillation frequency; a mixer 12 that receives an input signal which is to be transmitted to a receiver and an oscillation signal output from the IMPATT diode oscillator 14, and performs frequency conversion; a filter 16 that eliminates noise from the output signal of the mixer 12; and an amplifier 18 that amplifies the output signal of the filter 16 and transmits the amplified signal via an antenna.
The mixer 12 in the transmitter of FTG. 3B does not suppress the local oscillation signal. The filter 16 eliminates noise from the local oscillation signal and the frequency-converted signal, and outputs an output signal.
FIGS. 4A and 4B are diagrams showing the construction of transmitters for the wireless communication system having a CMOS structure, according to another embodiment of the present invention.
In the present embodiment, an IMPATT diode may operate as an IMPATT diode self- oscillating mixer 20 that can perform the functions of both a mixer and an oscillator. For this purpose, an input port is separately provided to the IMPATT diode, and a signal which is to be transmitted is input through the input port. Accordingly, in the transmitter 10-2 shown in FIG. 4A, a frequency-converted signal and an oscillation signal are output from the MPATT diode self-oscillating mixer 20, noise is eliminated from the frequency-converted signal and the oscillation signal by the filter 16, the output signal of the filter 16 and the output signal of the IMPATT self-oscillating mixer 20 are input to an amplifier 18, and the frequency-converted signal and the oscillation signal are amplified by the amplifier 18 and then transmitted.
In the present embodiment, the MPATT diode seh°-oscillating mixer 20 functions as a mixer as well as an oscillator, so that a transmitter 10-2 having a simpler structure can be implemented.
The reason why the MPATT diode can perform both oscillation and mixing functions is described below. An MPATT diode oscillator is divided into a part to which a Direct Current (DC) bias is applied, and an output part through which an oscillation signal is output In this case, both the
DC bias and an input signal are applied to the DC bias input part using a bias-T, and thus mixing of the oscillation signal and the input signal occurs due to the nonlinear characteristic of the MPATT diode. The application of the input signal to the IMPATT diode oscillator can be realized by constructing the separate input port as well as the bias-T, and can also be realized using a circulator provided to an output port side of the IMPATT diode.
The transmitter 10-3 of FTG. 4B is a modified example of the transmitter of FlG. 4A. In the transmitter 10-3, a fiequency-converted signal and an oscillation signal are output from an
IMPATT diode self-oscillating mixer 20, noise is eliminated from the frequency-converted signal and the oscillation signal by the filter 16, and the output signal of the filter 16 is amplified by an amplifier
18 and is then transmitted.
FIGS. 5 A and 5B are diagrams illustrating an example of an IMPATT diode that is applied to the present invention.
As shown in FlG. 5, an n-well 320 is formed in a p-type substrate 310, and a p+ junction region 330 and an n+ junction region 340 are formed in the respective predetermined regions of the n-well 320 so as to be spaced apart from each other by a preset distance. Furthermore, contact parts 350 and 360 are formed on the p+ junction region 330 and the n+ junction region 340, respectively. The IMPATT diode, formed as described above, has an avalanche region, a drift region and an inactivated region, as shown in FlG. 5B.
Furthermore, when a separate contact part is additionally provided to the p+ junction region 330 and is used as an input port, the IMPATT diode self-oscillating mixer, which can output the frequency-converted signal obtained using the oscillation frequency, can be implemented without additionally providing a separate mixer, as shown in FIG. 4A or 4B. The frequency-converted signal and the oscillation signal, which are output from the IMPATT diode self-oscillating mixer, are transmitted through the amplifier.
FIGS. 6A and 6B are diagrams illustrating another example of the IMPATT diode that is applied to the present invention.
As shown in FIG. 6A, a p+ junction region 330 and an n+ junction region 340 are formed on the respective predetermined regions of a p-type substrate 310. Furthermore, contact parts 350 and 360 are formed on the p+ junction region 330 and the n+ junction region 340, respectively. The IMPATT diode, formed as described above, has an avalanche region, a drift region and an inactivated region, as shown in FTG. 6B.
Furthermore, the IMPATT diode self-oscillating mixer, which can output the frequency- converted signal obtained using the oscillation frequency, can be implemented without additionally providing a separate mixer, as shown in FTG. 4A or 4B. The frequency-converted signal and the oscillation signal, which are output from the IMPATT diode self-oscillating mixer, are transmitted through the amplifier.
FIGS. 7A and TB show the construction of receivers for the wireless communication systems having a CMOS structure, which are applied to the present invention.
As shown in FTG. 7A, the receiver 20 applied to the present invention includes an amplifier 22 configure to amplify a signal received from a transmitter, and a Schottky diode 24 that eliminates noise from the output signal of the amplifier 22 and process the amplified signal to restore an original signal using an oscillation signal, thus generating an output signal.
In the present embodiment, the amplifier 22 and the Schottky diode 24 are integrated into a single chip though a CMOS process. FIG. 7B is a diagram showing the construction of another receiver for the wireless communication systems having a CMOS structure, which is applied to the present invention. The receiver 20-1 of the present embodiment includes an amplifier 22, a first filter 26 that eliminates noise from the output signal of the amplifier 22, a Schottky diode 24, and a second filter 28 that eliminates noise from the output signal of the Schottky diode 24. The Schottky diode 24 restores the output signal of the first filter 26 to an original signal using an oscillation signal, and outputs the restored signal.
The receiver 20-1 shown in FIG. TB is also integrated into a single chip through a CMOS process.
FIG. 8 is a sectional diagram of a Schottky diode that is applied to the present inventioa
An example of a method of manufacturing the Schottky diode 24 is described with reference to FIG. 8 below. First, an n-well region 420 is formed in a p-type substrate 410, and then two pairs of Shallow Trench Isolation (SIT) layers 430 are formed in the n-well region 420 so as to be spaced apart from each other by a predetermined distance.
Thereafter, n+ ions are implanted into regions between the two pairs of STI layers 430, which are adjacent to each other, and thus n+ regions are formed, but the n+ region is not formed in other regions and thus a Schottky barrier contact layer 450 is formed therein. The Schottky barrier contact layer is formed between an n-well having a relatively low doping concentration, and contact metal, or between the n-well and a salicide material layer. Thereafter, an interlayer insulation layer 440 is formed on the n+ well region 420, and is removed such that the Schottky barrier contact layer 450 is exposed Thereafter, contact parts 460 are formed on the Schottky barrier contact layer 450, and are used as input and output terminals.
The above-described Schottky diode has an excellent operational speed because it is manufactured through a CMOS process, operates using majority carriers, and has a relatively small capacitance.
Furthermore, the Schottky diode has a high cutoff frequency of several hundred GHz, so that it has an excellent ability to modulate millimeter wave signals. Furthermore, a matching circuit is added to the Schottky diode, which is a nonlinear device, so that the Schottky diode can function as a square law detector.
In order to implement the square law detector using the Schottky diode, a bias voltage that can maximize a square component in the I-V characteristic of the Schottky diode must be used. When a setting is made such that the Schottky diode operates at a forward voltage, the bias voltage at which the square component in the I-V characteristic is maximized can be found. Furthermore, when a setting is made such that the Schottky diode operates in a reverse breakdown region, the square law detector can be implemented. When a voltage adjacent to the reverse breakdown voltage is applied to the Schottky diode, there is an advantage in that the I-V characteristic thereof increases and the capacitance thereof decreases, so that the cutoff frequency thereof is increased.
When the above-described Schottky diode is manufactured through a CMOS process, it can be easily integrated with peripheral devices, that is, the amplifier 22 and the filters 26 and 28 which are also manufactured through a CMOS process, and thus the receiver 20 can be integrated in a single chip.
[Industrial Applicability]
As described above, in accordance with the present invention, the IMPATT diode oscillator manufactured through a CMOS process is used as a local oscillator, so that each of the transmitters for the wireless communication system can be integrated into a single chip. Therefore, the construction of each transmitter can be simplified and the design cost thereof can also be minimized.
Furthermore, when the IMPATT diode self-oscillating mixer is used, it functions as both a local oscillator and a mixer, so that the construction of each of the transmitters for the wireless communication system can be further simplified. Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the present invention as disclosed in the accompanying claims.

Claims

[CLAIMS]
[Claim 1]
A wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal, wherein the transmitter comprises: an IMpact Avalanche Transit Time (TOVIPATT) diode oscillator that outputs an oscillation signal having a preset oscillation frequency; a mixer that receives the input signal and the oscillation signal output from the IMPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a rrequency-converted signal output from the mixer; and an amplifier that amplifies the frequency-converted signal output from the filter and the oscillation signal output from the IMP ATT diode oscillator, and transmits the amplified signals via an antenna.
[Claim 2]
A wireless communication system a timismitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal, wherein the transmitter comprises: an IMPATT diode oscillator that outputs a signal having a preset oscillation frequency; a mixer that receives the input signal and the oscillation signal output from the MPATT diode oscillator, and performs frequency conversion; a filter that eliminates noise from a frequency-converted signal output from the mixer; and an amplifier that amplifies the fiequency-converted signal output from the filter, and transmits the amplified signal via an antenna.
[Claim 3] The wireless communication system according to claim 1 or claim 2, wherein the IMPATT diode oscillator has a Complementary Metal Oxide Semiconductor (CMOS) structure.
[Claim 4]
The wireless communication system according to claim 1 or claim 2, wherein the receiver comprises: an amplifier that amplifies the fiequency-converted signal and the oscillation signal received from the transmitter; and a Schottky diode, having a CMOS structure, that eliminates noise from the frequency- converted signal output from the amplifier and process the amplified frequency-converted signal to restore an original signal using the oscillation signal, thus generating an output signal.
[Claim 5]
The wireless communication system according to claim 1 or claim 2, wherein the receiver comprises: an amplifier that amplifies the frequency-converted signal and the oscillation signal received from the transmitter, a first filter that eliminates noise from an output signal of the amplifier; a Schottky diode, having a CMOS structure, that processes the fiequency-converted signal output from the first filter to restore an original signal using the oscillation signal, thus generating an output signal; and a second filter that eliminates noise from the output signal of the Schottky diode.
[Claim 6]
A wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal, wherein the transmitter comprises: an IMPATT diode serf-oscillating mixer having an input port to receive the input signal, configured to output a frequency-converted signal and an oscillation signal having a preset oscillation frequency; a filter that eliminates noise from the frequency-converted signal output from the LMPATT diode serf-oscillating mixer, and an amplifier that amplifies the frequency-converted signal output from the filter and the oscillation signal output from the IMPATT diode self-oscillating mixer, and is configured to transmit the amplified signals via an antenna; wherein the transmitter is integrated into a semiconductor substrate.
[Claim 7]
A wireless communication system comprising a transmitter configured to transmit an input signal which is to be transmitted, and a receiver configured to receive an output signal from the transmitter and process the received signal to restore an original signal, wherein the transmitter comprises: an IMPATT diode self-oscillating mixer having an input port to receive the input signal, configured to output a frequency-converted signal and an oscillation signal having a preset oscillation frequency, a filter that eliminates noise fiom the frequency-converted signal output from the IMPATT diode self-oscillating mixer; and an amplifier that amplifies the frequency-converted signal output from the filter and is configured to transmit the amplified signal via an antenna; wherein the transmitter is integrated into a semiconductor substrate.
[Claim 8]
The wireless communication system according to claim 6 or claim 7, wherein the IMPATT diode has a CMOS structure.
[Claim 9]
The wireless communication system according to claim 6 or claim 7, wherein the receiver comprises: an amplifier configured to amplify the frequency-converted signal and the oscillation signal received from the transmitter, and a Schottky diode, having a CMOS structure, that eliminates noise from the frequency- converted signal output from the amplifier and processes the amplified frequency-converted signal to restore an original signal using the oscillation signal, thus generating an output signal.
[Claim 10]
The wireless communication system according to claim 6 or claim 7, wherein the receiver comprises: an amplifier configured to amplify the frequency-converted signal and the oscillation signal received from the transmitter, a first filter that eliminates noise from an output signal of the amplifier; a Schottky diode, having a CMOS structure, that processes the frequency-converted signal output from the first filter to restore an original signal using the oscillation signal, thus generating an output signal; and a second filter that eliminates noise from the output signal of the Schottky diode.
[Claim 11]
A method of manufacturing a wireless communication system having a CMOS structure, the method comprising the steps of: providing a semiconductor substrate; and forming an IMPATT diode, a mixer, a filter and an amplifier in the semiconductor substrate; wherein the MAPTT diode is formed through the steps of: forming an n-well in a p-type substrate; forming a p+ junction region and an n+ junction region that are spaced apart from each other in a predetermined region of the n-well by a preset distance; and forming contact parts on the p+ junction region and the n+ junction, respectively.
PCT/KR2007/000928 2006-12-01 2007-02-22 Wireless communication system having cmos structure and method of manufacturing the same WO2008066218A1 (en)

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KR1020060120683A KR100829117B1 (en) 2006-12-01 2006-12-01 Wireless communication system based on cmos structure and fabrication method thereof
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952941A (en) * 1988-01-27 1990-08-28 Rockwell International Corporation Weather radar temperature controlled IMPATT diodes circuit and method of operation
US5347149A (en) * 1989-11-29 1994-09-13 Texas Instruments Incorporated Integrated circuit and method
US20020011604A1 (en) * 2000-07-28 2002-01-31 Motoji Yagura Semiconductor device for milliwave band oscillation, fabricating method therefor and oscillator therewith
KR20040016054A (en) * 2002-08-14 2004-02-21 엘지전자 주식회사 No loss filter apparatus using negative resistance circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952941A (en) * 1988-01-27 1990-08-28 Rockwell International Corporation Weather radar temperature controlled IMPATT diodes circuit and method of operation
US5347149A (en) * 1989-11-29 1994-09-13 Texas Instruments Incorporated Integrated circuit and method
US20020011604A1 (en) * 2000-07-28 2002-01-31 Motoji Yagura Semiconductor device for milliwave band oscillation, fabricating method therefor and oscillator therewith
KR20040016054A (en) * 2002-08-14 2004-02-21 엘지전자 주식회사 No loss filter apparatus using negative resistance circuit

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