WO2008065353A3 - Error source identification in dot arrays - Google Patents

Error source identification in dot arrays Download PDF

Info

Publication number
WO2008065353A3
WO2008065353A3 PCT/GB2007/004474 GB2007004474W WO2008065353A3 WO 2008065353 A3 WO2008065353 A3 WO 2008065353A3 GB 2007004474 W GB2007004474 W GB 2007004474W WO 2008065353 A3 WO2008065353 A3 WO 2008065353A3
Authority
WO
WIPO (PCT)
Prior art keywords
grid
displacements
dot
design
nanometres
Prior art date
Application number
PCT/GB2007/004474
Other languages
French (fr)
Other versions
WO2008065353A2 (en
Inventor
Philip Hoyle
Ian Laidler
Original Assignee
Vistec Lithography Inc
Philip Hoyle
Ian Laidler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vistec Lithography Inc, Philip Hoyle, Ian Laidler filed Critical Vistec Lithography Inc
Publication of WO2008065353A2 publication Critical patent/WO2008065353A2/en
Publication of WO2008065353A3 publication Critical patent/WO2008065353A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

A method of error source identification in a dot array comprises the steps of generating a high-density grid pattern of nanoscale dots, for example dots of as little as 7 nanometres diameter at a pitch of 15 to 100 nanometres, on the surface of a substrate by an electron beam lithography machine in accordance with a design embodying a grid with the same dot pitch in two mutually orthogonal directions, i.e. a regular grid. Scanning electron micrographs (13) of individual sample areas of the generated array are then produced and the dot positions in each micrograph (13) and the displacements thereof from the dot positions in the design grid are determined, particularly with use of a fast Fourier transform and an estimated grid (12') representing the design grid, the estimated grid being recalculated as a best fit grid (12') in order to average the dot displacements. The determined displacements are evaluated to identify displacements indicative of systematic writing error and the source of the systematic writing error is identified by comparison of a frequency of the identified displacements with known or possible frequencies associated with errors occurring in machine operation.
PCT/GB2007/004474 2006-11-29 2007-11-22 Error source identification in dot arrays WO2008065353A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0623875.2 2006-11-29
GB0623875A GB2444292B (en) 2006-11-29 2006-11-29 Error source identification in dot arrays

Publications (2)

Publication Number Publication Date
WO2008065353A2 WO2008065353A2 (en) 2008-06-05
WO2008065353A3 true WO2008065353A3 (en) 2009-04-09

Family

ID=37671556

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/004474 WO2008065353A2 (en) 2006-11-29 2007-11-22 Error source identification in dot arrays

Country Status (2)

Country Link
GB (1) GB2444292B (en)
WO (1) WO2008065353A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136169A (en) * 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating
US5759744A (en) * 1995-02-24 1998-06-02 University Of New Mexico Methods and apparatus for lithography of sparse arrays of sub-micrometer features
US6061606A (en) * 1998-08-25 2000-05-09 International Business Machines Corporation Geometric phase analysis for mask alignment
US6278957B1 (en) * 1993-01-21 2001-08-21 Nikon Corporation Alignment method and apparatus therefor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648380B2 (en) * 1985-06-13 1994-06-22 株式会社東芝 Mask inspection method
US5424548A (en) * 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
JP2000323390A (en) * 1999-05-12 2000-11-24 Nikon Corp Charged-particle beam aligner
JP2001033231A (en) * 1999-07-22 2001-02-09 Hitachi Ltd Sample measuring device
JP2006156152A (en) * 2004-11-30 2006-06-15 Jeol Ltd Drift correction method and apparatus in fib automatic processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136169A (en) * 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating
US6278957B1 (en) * 1993-01-21 2001-08-21 Nikon Corporation Alignment method and apparatus therefor
US5759744A (en) * 1995-02-24 1998-06-02 University Of New Mexico Methods and apparatus for lithography of sparse arrays of sub-micrometer features
US6061606A (en) * 1998-08-25 2000-05-09 International Business Machines Corporation Geometric phase analysis for mask alignment

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
P. C. HOYLE AND I. LAIDLER: "Measurement of Arrays of Dots Produced by Electron-Beam Lithography", MATER. RES. SOC. SYMP. PROC., vol. 961, 2007, XP002513058 *

Also Published As

Publication number Publication date
GB0623875D0 (en) 2007-01-10
GB2444292A (en) 2008-06-04
WO2008065353A2 (en) 2008-06-05
GB2444292B (en) 2009-08-05

Similar Documents

Publication Publication Date Title
CN102540702B (en) System and method for imprint-guided block copolymer nano-patterning
WO2006060757A3 (en) Eliminating printability of sub-resolution defects in imprint lithography
EP1418576A3 (en) Electron beam lithography method
EP1612838A3 (en) Electron beam lithography method
WO2007047337A3 (en) Improved probe system comprising an electric-field-aligned probe tip and method for fabricating the same
EP2439677A3 (en) Dot pattern reading and generating devices
ATE386570T1 (en) METHOD USING SCANING MICROSCOPE SYRINGES AND PRODUCTS PRODUCED THEREFOR OR THEREFROM
WO2008064176A3 (en) Method and system for improving particle beam lithography
NO20071731L (en) Flexible nanopreg stamp
WO2009029570A3 (en) Laser patterning of a carbon nanotube layer
JP2011511465A5 (en)
EP2302659A3 (en) Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
CN104245577A (en) Methods for perforating graphene using an activated gas stream and perforated graphene produced therefrom
JP2004127737A5 (en)
KR20070075660A (en) Conductive carbon nanotube tip, probe of scanning probe microscope comprising the same and manufacturing method of the conductive carbon nanotube tip
WO2006093601A3 (en) Uniform single walled carbon nanotube network
Wong et al. Unraveling the rotational disorder of graphene layers in graphite
US9964855B2 (en) Bit patterned media template including alignment mark and method of using same
WO2008035220A3 (en) Handheld microcantilever-based sensor for detecting tobacco-specific nitrosamines
US9329201B2 (en) Methods, devices, and systems for forming atomically precise structures
JP2006526086A5 (en)
EP2277824A3 (en) Modified carbon nanotube arrays
WO2008065353A3 (en) Error source identification in dot arrays
Varykhalov et al. Structure and quantum-size effects in a surface carbide: W (110)∕ C-R (15× 3)
JP2018093182A5 (en) Method, system and imprint lithography method for adjusting the position of a template

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07824679

Country of ref document: EP

Kind code of ref document: A2