WO2008053534A1

WO2008053534A1 - Doherty amplifier

Info

Publication number: WO2008053534A1
Application number: PCT/JP2006/321769
Authority: WO
Inventors: Mineo Noda; Shinji Ohkawa; Kouji Ishii; Toshirou Yukinaga
Original assignee: Panasonic Corporation
Priority date: 2006-10-31
Filing date: 2006-10-31
Publication date: 2008-05-08
Also published as: JPWO2008053534A1

Abstract

It is arranged that the temperature rise values of a plurality of doherty amplifiers combined in parallel be the same, thereby achieving a high efficiency of power amplification and an excellent distortion compensation. A carrier amplifying element heat-dissipator (106) includes, as amplifying elements having the same function, both a carrier amplifying element (C101) of a first doherty amplifier (101) and a carrier amplifying element (C102) of a second doherty amplifier (102). A peak amplifying element heat-dissipator (107) includes, as amplifying elements having the same function that is different from that of the carrier amplifying elements, both a peak amplifying element (P101) of the first doherty amplifier (101) and a peak amplifying element (P102) of the second doherty amplifier (102). A distributor (103) and a combiner (104) are used to connect the first and second doherty amplifiers (101,102) in parallel.

Description

Specification

Doherty amplifier

Technical field

TECHNICAL FIELD [0001] The present invention relates to a Doherty amplifier used in a base station distortion compensation type power amplifying apparatus and the like, and more particularly to a Doherty amplifier whose temperature characteristics are improved in order to perform distortion compensation with high power efficiency.

Background art

Conventionally, as a high-efficiency distortion compensation method in a power amplification device of a base station, a predistortion method that cancels the original distortion by creating a reverse characteristic distortion and a feedforward method that applies distortion control to the front side A so-called cross-scan selection system is introduced in Non-Patent Document 1 and so on. Non-patent document 2 also introduces a base station distortion-compensated power amplifying device using a feed-forward method and Dono and tee amplifiers. Furthermore, by combining the above-mentioned cross scan selection method with a Dono and Tee amplifier, it is possible to achieve further higher efficiency and lower distortion of the base station distortion compensation power amplifier.

FIG. 1 is a block diagram showing a configuration of a conventional base station distortion compensation power amplifying apparatus that combines a cross scan selection method and a Doherty amplifier. In other words, in a general cross-cancellation-type base station distortion-compensated power amplifier, as shown in FIG. 1, two main amplifiers are a first Dono, tee amplifier 1 and a second Dono, tee amplifier 2. By using a parallel configuration, the base station distortion compensation power amplifier can be made more efficient. In FIG. 1, the first Doherty amplifier 1 has a feedback path from the output side distributor 4 to the synthesizer 9 → delay unit 8 → distributor 7 → distributor 3 → first dono, tee amplifier 1. Distortion control is performed by feed-forward control based on. In addition, the second Doherty amplifier 2 creates a distortion having an inverse characteristic with respect to the first Dono and Tee amplifier 1 and inputs the distortion to the synthesizer 6 (that is, by applying predistortion). The distortion input from Doherty amplifier 1 to distributor 4 → delayer 5 → combiner 6 is canceled out. This makes it possible to achieve both high efficiency and distortion compensation of the base station distortion compensation power amplifier. [0004] Further, the Doherty amplifier used in the base station distortion compensation power amplifying apparatus as shown in FIG. 1 was first devised by Mr. WHDoherty in 1936, and was introduced in Non-Patent Document 3, for example. ing. In the case of a signal waveform using a large number of carriers such as Orthogonal Frequency Divisional Multiplexing (OFDM), the ratio of peak power to average power is high, so that high power efficiency can be obtained. Dono and Tee amplifiers are preferred. Thus, the Dono and Tee amplifiers are widely known as high-efficiency technology for amplifiers. Fig. 2 is a block diagram showing the basic configuration of the Doherty amplifier. As shown in FIG. 2, the Doherty amplifier includes a carrier amplifying element 21 and a first λ / 4 phase shifter 22 that are always operating, and a peak amplifying element 23 and a second end / 4 that operate only when the peak power is high. And phase shifter 24. Since such a Dono and Tee amplifier is a well-known technique, description of its operation is omitted.

[0005] The cross scan selection type distortion compensation circuit as shown in Fig. 1 uses two sets of Dono and Tee amplifiers as shown in Fig. 2. Therefore, in order to perform sufficient distortion compensation, the distortion characteristics of two sets (plurality) of Dono and Tee amplifiers (that is, the first Dono, Tee amplifier 1 and the second Doherty amplifier 2 shown in FIG. 1) are used. It is necessary to align. For this purpose, the temperature rise values of the two pairs (multiple) Donot and Tee amplifiers must be set to the same value. In other words, if a temperature difference occurs between two sets (multiple) of Doherty amplifiers, the operation of the cross scan selection will not be stable, so two sets of (multiple) Doherty amplifiers (first Doherty amplifier 1 and second It is necessary to prevent the temperature difference from occurring in the Doherty amplifier 2). Even when a high-power Doherty amplifier is required, a method of combining multiple Doherty amplifiers in parallel can be used, but in this case as well, in order to maintain high efficiency over a wide power range, Therefore, it is necessary to align the temperature rise values of these multiple Dono and Tee amplifiers to almost the same value. That is, it is necessary to cool each amplifying element so as not to cause a temperature difference between the plurality of Dono and Tee amplifiers.

[0006] FIG. 3 is a conceptual diagram of the prior art showing an arrangement example in which two sets of Doherty amplifiers in parallel configuration are mounted on the same radiator. In other words, Fig. 3 shows a configuration in which the first Dono, tee amplifier 1 and second Doherty amplifier 2 are mounted on the same radiator (fin) 31 in the cross-scan selection type distortion compensation circuit in Fig. 1. Is shown. As shown in Figure 3, the first Doherte Carrier amplifying element CI and peak amplifying element PI of amplifier 1 and carrier amplifying element C2 and peak amplifying element P2 of second Doherty amplifier 2 are mounted on the same radiator 31 to achieve a temperature balance of each amplifying element. The

Non-Patent Document 1: 2002 IEICE Electronics Society Conference “Distortion-Canceling Power Synthesis Amplifier”

Special Reference 2: High efficiency feed— forward ampliner using RF predistortion iinenze rand the modified Doherty Amplifier ", 2004 IEEE MTT— S Digest

Non-Patent Document 3: "A New High Efficiency Power Amplifier For Modulared Wave", Proceeding of the Institude of Radio Engineers, Vol.24, No.9.September 1936

Disclosure of the invention

Problems to be solved by the invention

[0007] However, with the configuration in which the first Doherty amplifier 1 and the second Donotty amplifier 2 are mounted on the same radiator 31 in the direction of the radiator 31 as shown in FIG. Due to the heat dissipation action, the heat of the second Donoty tee amplifier 2 is conducted to the first Donoty tee amplifier 1 side, so the temperature of the first Doherty amplifier 1 is lower than the temperature of the second Doherty amplifier 2. The higher the temperature, the difference in temperature occurs. Therefore, as shown in the configuration diagram of FIG. 4, the radiator 31 on which the first Dono amplifier Tee 1 and the second Doherty amplifier 2 are mounted is forcibly air-cooled upward with a fan 32. Then, the temperature difference between the first dough / tee amplifier 1 and the second dough / tee amplifier 2 becomes small. However, the heat of the second Dono, the carrier amplifier C2 of the tee amplifier 2 on the upstream side of the wind is conducted toward the carrier amplifier C1 of the first Doherty amplifier 1 on the downstream side of the wind. A temperature difference At is generated between the carrier amplifier C1 and the carrier amplifier C2 that are always operating. As a result, the characteristics of the first Dono, Tee amplifier 1 and the second Doherty amplifier 2 vary, and there is a difference in the output power of both Doherty amplifiers. This is a factor that reduces power efficiency.

In addition, as shown in the configuration diagram of FIG. 5, the radiator 31 having the first dough / tee amplifier 1 and the second dono / ti amplifier 2 is provided with a plurality of fans (for example, two fans). 32a, 32b) in the case of forced air cooling in the horizontal direction (that is, the left force in the figure to the right), the first Doherty amplifier is caused by the airflow variation of multiple fans (two fans 32a, 32b). 1 and second dono, tee amplification Temperature difference At occurs in vessel 2. As a result, a difference occurs between the output powers of the Dono and Tee amplifiers, which again causes a power loss in the combiner 6 on the output side, which causes a reduction in power efficiency.

In addition, as shown in the configuration diagram of FIG. 6, a radiator 31 equipped with the first dough / tee amplifier 1 and the second dough / tee amplifier 2 is connected to the left fan by a large fan 33. When forced air cooling is applied to the right side of the fan, there is a difference in air volume between the center and outside of the radiator 31. Therefore, a temperature difference occurs between the center and the outside of the radiator 31, and the temperature difference At between the first Dono, carrier amplifier C1 of the tee amplifier 1 and the second Dono, carrier amplifier C2 of the tee amplifier 2 is Arise. As a result, there is a difference in the output power of each Doherty amplifier, which also causes a power loss in the output-side combiner 6 and decreases the power efficiency. In addition, the use of the large fan 33 causes problems such as an increase in the size of the entire distortion compensation device of the Doherty amplifier.

[0010] Although not particularly illustrated, the explanation will be made assuming FIG. 3. If the thickness of the heat dissipation board excluding the radiator portion through which air flows in the radiator 31 is increased, the thermal resistance is lowered, and the heat dissipation board portion is reduced. As a result, the heat conductivity of the heat dissipation substrate increases and the heat distribution on the heat dissipation substrate can be made uniform. As a result, the temperature rise values of the carrier amplifier C1 of the first Donoty and tee amplifier 1 and the carrier amplifier C2 of the second Doherty amplifier 2 can be made substantially the same value. However, the thicker part of the heat dissipation substrate increases the total weight of the heatsink, resulting in problems such as the overall distortion compensation device of the Doherty amplifier becoming heavier.

An object of the present invention is to realize both power balance, high-efficiency power amplification, and good distortion compensation by setting the temperature rise values of a plurality of Doherty amplifiers configured in parallel to be substantially the same. It is to provide a Dono and Tee amplifier that can perform the above.

Means for solving the problem

[0012] The Dono and tee amplifier of the present invention is a Dono and tee amplifier in which a plurality of Dono and tee amplifier circuits are connected in parallel, and a plurality of amplifying elements having the same function are connected to the same radiator. Adopt the configuration to be installed.

The invention's effect

[0013] According to the Dono and tee amplifiers of the present invention, the temperature rise values of a plurality of amplifying elements having the same function can be made substantially the same value, so that various characteristics of a plurality of Doherty amplifying circuits are made uniform. be able to. As a result, it is possible to increase power efficiency and achieve good distortion characteristics in a cross-cancellation-type base station distortion compensation power amplifier that is configured by connecting multiple Dono and Tee amplifier circuits in parallel. can do.

[0014] As a specific example, a plurality of carrier amplifying elements that are always operating can be maintained at substantially the same temperature, and a plurality of peak amplifying elements that operate when the peak power is large are also at substantially the same temperature. Can be maintained. As a result, it is possible to prevent deterioration of various characteristics caused by temperature change of the Doherty amplifier, and to realize high power efficiency and good distortion compensation.

Brief Description of Drawings

[0015] FIG. 1 is a block diagram showing a configuration of a conventional base station distortion compensation power amplifying apparatus combining a cross scan selection method and a Dono and tee amplifier.

[Figure 2] Block diagram showing the basic configuration of the Dono and Tee amplifiers

[Fig. 3] Conceptual diagram of conventional technology showing an example of arrangement in which two sets of Doherty amplifiers in parallel configuration are mounted on the same radiator

圆 4] Configuration diagram of conventional technology with forced air cooling of a radiator with a Doherty amplifier

[Fig.5] Configuration of conventional technology with forced air cooling of a radiator with a Doherty amplifier

[Figure 6] Configuration diagram of conventional technology with forced air cooling of a radiator with a Doherty amplifier

FIG. 7 is a circuit diagram in which two sets of Dono and Tee amplifiers applied in parallel to each embodiment of the present invention are combined in parallel.

[FIG. 8] Configuration diagram of the Doherty amplifier of Embodiment 1 showing the arrangement of each element when the two sets of Doherty amplifiers shown in FIG. 7 are mounted on a radiator.

FIG. 9 is a configuration diagram of the Doherty amplifier according to the second embodiment showing the arrangement of each element when the two Dono and Tee amplifiers shown in FIG. 7 are mounted on a multilayer substrate.

[FIG. 10] Circuit diagram of N-Way Doherty amplifier applied to the third embodiment.

[Fig. 11A] Equivalent circuit in configuration diagram of Doherty amplifier in Embodiment 3 in which two sets of Dono and Tee amplifiers are combined in parallel using N-Way Doherty amplifiers

[FIG. 11B] Effective circuit arrangement in the configuration diagram of the Doherty amplifier of Embodiment 3 in which two sets of Dono and Tee amplifiers are combined in parallel using N-Way Dono and Tee amplifiers. [Fig. 12A] Equivalent circuit in the configuration diagram of the Dono and Ty amplifiers of the modified example of Embodiment 3 in which the peak amplifying elements of the same capacity are combined in the same radiator in the N-Way Doherty amplifier [Fig. 12B] N- Way Effective circuit arrangement in the Dono and Ty amplifier configuration diagram of the modified example of Embodiment 3 in which the peak amplifying elements of the same capacity are combined in the same radiator in the Dono and Ty amplifiers

[Fig. 13] Configuration diagram of the Doherty amplifier of Embodiment 4 showing the configuration of an N-Way Dono, tee amplifier capable of changing the number of peak amplifying elements.

BEST MODE FOR CARRYING OUT THE INVENTION

In the Doherty amplifier according to the present invention, in a configuration in which a plurality of Dono and Tee amplifiers are combined in parallel, amplification elements having the same function are arranged in the same radiator to achieve uniform temperature rise. That is, since the Doherty amplifier is composed of a carrier amplifying element that always operates and a peak amplifying element that operates only when the peak power is high, a plurality of Doherty amplifiers constituting a base station distortion compensation power amplifying apparatus and the like are arranged in parallel. In the circuit, carrier amplifiers are mounted on the same radiator, and peak amplifying elements are mounted on the same radiator. As a result, the temperature characteristics of a plurality of Dono and Tee amplifiers can be made uniform, so that deterioration of various characteristics caused by temperature changes of the Doherty amplifier can be prevented. As a result, it is possible to achieve high power efficiency and good distortion compensation, and it is possible to provide a high quality cross scan selection type base station distortion compensation power amplifying apparatus and the like.

[0017] Next, some specific embodiments of the Dono / Tee amplifier of the present invention will be described in detail. Note that in the drawings used in the following embodiments, the same components are denoted by the same reference numerals, and redundant description will be omitted as much as possible. In the following explanation, a base station distortion compensation power amplifier combining a cross scan selection method with a Dono and Tee amplifier, and a plurality of Doherty amplifier circuits are combined in parallel when a high output Doherty amplifier is required. An embodiment in parallel synthesis of a plurality of Doherty amplifier circuits assuming the above-described power amplifying device will be described.

<Embodiment 1> FIG. 7 is a circuit diagram in which two sets of Dono and tee amplifier circuits applied to each embodiment of the present invention are combined in parallel. As shown in FIG. 7, in the double-threaded Doherty amplifier, a first Doherty amplifier 101 and a second Doherty amplifier 102 are connected in parallel by an input-side distributor 103 and an output-side combiner 104. It becomes the composition. The first Donotty amplifier 101 includes a carrier amplifying element C101 and a first 4th phase shifter RC101 that operate constantly, a peak amplifying element P101 that operates only when the peak power is high, and a second λ / 4. It consists of a parallel circuit with phaser RP101. In addition, the second Dotno and T-amplifiers 102 are a carrier amplifying element C102 and a first quarter-phase shifter RC102 that are always operated, a peak amplifying element P102 that operates only when the peak power is high, and a second λ. It consists of a parallel circuit with the / 4 phase shifter RP102. Since the operation of the Doherty amplifier having such a configuration is a well-known technique, a description thereof will be omitted.

FIG. 8 is a configuration diagram of the Doherty amplifier according to the first embodiment showing the arrangement of each element when the two sets of Doherty amplifiers shown in FIG. 7 are mounted on a radiator. As shown in FIG. 8, the carrier amplifying element radiator 106 is equipped with a carrier amplifying element C 101 of the first Doherty amplifier 101 and a carrier amplifying element C 102 of the second Donoty amplifier 102. In addition, the peak amplifying element radiator 107 is equipped with a peak amplifying element P101 of the first Doherty amplifier 101 and a second Donoty, a peak amplifying element P102 of the tee amplifier 102. That is, the carrier amplifying element radiator 106 and the peak amplifying element radiator 107 are each equipped with an amplifying element having the same function.

[0020] Then, as shown in the circuit configuration of FIG. 7, the first Dono, tee amplifier 101 includes the first end / 4-phase shifter RC101 and the second end / 4-phase shifter RP101 in FIG. In the second Doherty amplifier 102, the first end / 4-phase shifter RC102 and the second end / 4-phase shifter RP102 are connected as shown in FIG. The first Doherty amplifier 101 and the second Donotty amplifier 102 are connected in parallel by the combiner 104 on the output side.

In the configuration of the element arrangement on the radiator as shown in FIG. 8, the carrier amplification element C101 and the peak amplification element P101 constitute the first Doherty amplifier 101, and the carrier amplification element C102 and the peak amplification element P102 Thus, the second Doherty amplifier 102 is configured. Then, by combining these two (multiple) Dono and Tee amplifiers in close proximity, the Doherty amplifiers are combined in parallel. To realize.

Accordingly, the carrier amplifying element C101 of the first Doherty amplifier 101 having the same function and the carrier amplifying element C102 of the second Doherty amplifier 102 are the same radiator (that is, the radiator for the carrier amplifier). It is possible to maintain the same temperature rise value. In addition, the peak amplifying element P101 of the first Donotty amplifier 101 having the same function and the peak amplifying element P102 of the second Doherty amplifier 102 are the same radiator (that is, the radiator for the peak amplifying element). 107), it is possible to maintain the same temperature rise value. As a result, the first Doherty amplifier 101 and the second Dono and tee amplifier 102 can be made to have the same characteristics, so that the base station distortion compensation power combining the cross scan selection method and the Dono and tee amplifiers. Even when applied to an amplifying device, it is possible to achieve high efficiency of power amplification and good distortion characteristics.

That is, a plurality of carrier amplifiers are arranged on one radiator, and a plurality of peak amplifying elements are arranged on another radiator. Temperature characteristics of multiple dono and tee amplifiers by connecting multiple dono and tee amplifiers in parallel by circuit connection. Can be aligned. As a result, good distortion compensation can be performed while maintaining high power amplification efficiency.

In FIG. 8, since natural air cooling is assumed, a fan is not provided. However, a fan is provided below the carrier amplifying element radiator 106 and below the peak amplifying element radiator 107, respectively. If forced air cooling is performed, the temperature rise values of the carrier amplifier C101 of the first Dono, the tee amplifier 101 and the carrier amplifier C102 of the second Doherty amplifier 102 can be made more uniform, and the first The temperature rise values of the peak amplifying element P101 of the Dono and tee amplifier 101 and the peak amplifying element P102 of the second Dono and tee amplifier 102 can be made more uniform.

[0025] As a modification of the first embodiment, a plurality of amplifying elements formed on the same wafer and packaged, for example, two amplifying elements are operated alternately to perform amplification. A configuration of a Doherty amplifier using an element can also be used. In other words, in FIG. 8, transistor amplifiers (for example, C101 and C102) that operate with one signal are connected. If transistor amplifiers (for example, P101 and P102) that are mounted on the carrier amplifier radiator 106 and operate with the other signal are mounted on the peak amplifier radiator 107, multiple transistor amplifiers on the side that operates at the same timing Since the temperature rise value can be made substantially the same value, the push-pull amplifier can be stably operated regardless of the temperature change.

[0026] By configuring in this way, it is possible to align the inherent variations and aging of the devices that constitute each transistor amplifier (each Doherty amplifier) just by aligning the temperature characteristics of each transistor amplifier (or each Doherty amplifier). Therefore, power loss on the output side synthesized by each transistor amplifier (each Doherty amplifier) can be prevented. As a result, it becomes possible to operate a power amplifying apparatus composed of a plurality of Dono and Tee amplifiers without maintenance.

[0027] In general, when a plurality of Doherty amplifiers are manufactured, a distributor and a combiner used for the Doherty amplifiers are integrated at the time of manufacturing in order to correct variations inherent in the device. Although it is necessary to make fine adjustments for each table, the number of adjustment steps for the distributor and the combiner can be reduced by using the combination configuration of the amplifying elements according to this embodiment.

[0028] Further, as another modification of the first embodiment, when push-pull type amplifying elements having different output capacities are used in combination, push-pull type amplifying elements having the same power are mounted on the same radiator. You can also. For example, in Fig. 8, a 10w push-pull amplifier (eg, C101, C102) is mounted on the carrier amplifier radiator 106, and a 20w push-pull amplifier (eg, P101, P102) is peak amplified. If installed in the element heatsink 107, the temperature rise value of multiple push-pull amplifiers operating with the same power capacity can be made to be almost the same value, so that the push-pull amplifier is stable regardless of temperature changes. Can be operated automatically.

[0029] When a circuit is configured using push-pull amplifiers having different output capacities in this way, by configuring push-pull amplifiers having the same power capacity in the same radiator, The cost can be reduced as compared with the case where the push-pull amplifier circuit is configured by using independent amplifying elements having different output capacities. <Embodiment 2>

In the second embodiment, a case will be described in which a plurality (two sets) of Dono and Tee amplifiers are arranged on a multilayer substrate and synthesized in parallel. FIG. 9 is a configuration diagram of the Dono / Tee amplifier according to the second embodiment showing the arrangement of each element when the two sets of Dono / Tee amplifiers shown in FIG. 7 are mounted on a multilayer substrate.

In FIG. 9, on the first substrate 111 in the left diagram, the carrier amplifier C101 and the peak amplifier P101 of the first Doherty amplifier 101 are connected to the first λ / 4 phase shifter and the second λ / Force patterned with 4 phase shifter Carrier amplification element C101 side pattern and peak amplification element P101 side pattern is placed in a pattern that is slightly offset upward from the first substrate 111 in the figure. It has been.

[0032] Further, on the second substrate 112 in the middle figure, the carrier amplifier C 102 and the peak amplifier P102 of the second Dono, tee amplifier 102 are provided with the first λ / 4 phase shifter and the second λ / 4 Force phased with phase shifter Carrier amplification element The pattern on the C102 side and the pattern on the peak amplification element P102 side are patterned in a slightly spaced manner on the lower side of the second substrate 112 in the figure. Has been. That is, the carrier amplifying element C102 and the peak amplifying element P102 of the second Doherty amplifier 102 are the carrier of the first Donotty amplifier 101 when the first substrate 111 and the second substrate 112 are overlapped. Amplifying element C101 and peak amplifying element P101 are patterned in such a way that they do not overlap at the upper and lower positions.

When the first substrate 111 and the second substrate 112 are overlapped to form the multilayer substrate 113 by such patterning of the first substrate 111 and the second substrate 112, it is shown in the right diagram of FIG. Thus, the carrier amplification element C101 of the first Doherty amplifier 101 and the carrier amplification element C102 of the second Doherty amplifier 102 are arranged close to each other, and the peak amplification element of the first Doherty amplifier 101 is P101 and the peak amplifying element P102 of the second Doherty amplifier 102 are arranged close to each other. That is, the configuration is such that amplification elements having the same function are arranged close to each other.

That is, when two sets of Doherty amplifiers 101 and 102 patterned on the first substrate 111 and the second substrate 112 are stacked on the multilayer substrate 113, amplification elements having the same function are close to each other. Therefore, amplifying elements having the same function can be arranged at substantially the same temperature. This allows multiple Doherty amplifiers in parallel Good distortion compensation can be realized while maintaining high power amplification of the constructed base station distortion compensation power amplifier.

In the third embodiment, the configuration of an N-way Doherty amplifier in which peak amplification elements are connected in multiple stages will be described. FIG. 10 is a circuit diagram of an N-Way Dono and Tee amplifier applied to the third embodiment. As shown in FIG. 10, N peak amplifying elements P101-1 to P101-N are connected in parallel to one carrier amplifying element C101 to constitute an N-Way Doherty amplifier.

[0036] An N-Way Dono and Tee amplifier having a configuration in which peak amplifying elements are connected in multiple stages as shown in FIG. 10 is known as an amplifier with little decrease in efficiency even when the efficiency back-off is large. In other words, the N-Way Dono, tee amplifier can take a large back-off expressed by the difference between the maximum output amplitude level of one peak amplifying element and the saturation power level (that is, one peak Since the maximum output amplitude level of the amplifying element can be increased to the limit of the saturation power level), the power efficiency when the number of parallel connections of the peak amplifying element is increased as the peak power increases is always maximized. It becomes possible to maintain the state.

FIG. 11 is a configuration diagram of the Doherty amplifier according to Embodiment 3 in which two sets of Doherty amplifiers are combined in parallel using N-Way Doherty amplifiers. FIG. 11A is an equivalent circuit, and FIG. 11B is an effective circuit. Shows the arrangement. In other words, Fig. 11 shows the configuration of a Doherty amplifier when two sets of two-way Doherty amplifiers are combined in parallel when two peak amplifying elements are arranged in parallel. The carrier amplifying element C101 and the two peak amplifying elements PlOl-l, P101-2 are a two-way Doherty amplifier, and the carrier amplifying element C102 and the two peak amplifying elements P102-1, P102-2 are already present. A pair of 2-way Doherty amplifiers.

[0038] As shown in the equivalent circuit of FIG. 11A, in two sets of two-way Doherty amplifiers, a pair of two-way Doherty amplifiers C101 and another set of two-way Doherty amplifiers Since the carrier amplifying element C102 has the same function, it is arranged in the first radiator 121. In addition, the pair of 2-way Doherty amplifiers 1-way peak amplifying element P 101-1 and the other pair of 2-way doherty amplifiers 1-way peak amplifying element P102-1 have the same function. Because it has a second radiator 122 and a set of 2-way dono, The 2-way peak amplifying element P101-2 of the tee amplifier and the other pair of 2-way Doherty amplifier 2-way peak amplifying element P102-2 have the same function, so the third radiator 123 Are arranged. In other words, peak amplifying elements of the same way are mounted on the same heatsink. As a result, similarly to the case described in the first embodiment, carrier amplification elements having the same function can be set to substantially the same temperature, and other peak amplification elements having the same function can be set to substantially the same temperature. it can.

However, in the arrangement as shown in FIG. 11A, the carrier amplifying element C101 and the carrier amplifying element C102 that are always operating are arranged at the peak amplifying element P10 1− on the upstream side (lower side in the figure) of the cooling air. 1, P102-1, P101-2, P102-2 may be affected by heat.

Therefore, as shown in the layout diagram of the effective circuit in FIG. 11B, the radiator 121 having the carrier amplifying elements C101 and C102 that are always operating and generate a large amount of heat is disposed in the center. On both sides, a radiator 122 equipped with peak amplifying elements P101-1, P102-1, and a radiator 123 equipped with peak amplifying elements P101-2, P102-2 are arranged. With such an arrangement, the temperature characteristics of each amplifying element can be more accurately aligned even in N-Way Dono and Ty amplifiers.

[0041] FIG. 12 is a configuration diagram of a Dono / Tee amplifier according to a modification of Embodiment 3 in which peak amplifying elements having the same capacity are combined in the same heat radiator in an N-Way Doherty amplifier, and FIG. An equivalent circuit, Figure 12B, shows an effective circuit arrangement. That is, the equivalent circuit of FIG. 12A differs from the equivalent circuit of FIG. 11A in that the peak amplifying elements P101-1 and P1 01-2 having the same capacity are combined into the same radiator 122 and other peak amplifying elements having the same capacity. P102-1 and P102-2 are just put together in the same radiator 123. By doing so, the peak amplifying elements having the same capacity are not easily affected by heat, so that the temperature of each peak amplifying element can be made more uniform.

Further, as shown in the layout diagram of the effective circuit in FIG. 12B, the radiator 121 having the carrier amplifying elements C101 and C102 that are always operating and generate a large amount of heat is disposed at the center. On both sides, a heatsink 122 equipped with peak amplifying elements P101-1 and P101-2 with the same capacity and a heatsink 123 equipped with other peak amplifying elements P102-1 and P102-2 with the same capacity are arranged. To do. By adopting such an arrangement, N-Way Dono, tee amplification Thus, the temperature characteristics of each amplifying element can be more accurately aligned.

[0043] Also, as shown in FIG. 12, in a plurality of N-Way Doherty amplifiers, the peak amplifying elements having the same capacity are arranged on the same radiator, so that the temperature distribution in the radiator is simplified. Therefore, the circuit design of the N-Way Doherty amplifier can be simplified. Furthermore, since the distortion characteristics of Dono and Tee amplifiers are dominated by the carrier amplifying elements that are operating at all times, by placing the carrier amplifying elements in the center, the temperature rise value of each carrier amplifying element is made uniform. Therefore, better distortion characteristics can be realized when used in a base station distortion compensation power amplifier.

In Embodiment 3 above, a configuration example of a 2-way Dono / tee amplifier using two peak amplifying elements has been described. However, in an actual circuit such as a base station distortion compensation power amplifying apparatus, N peak amplifying elements Often composed of N-Way Doherty amplifiers using elements. In such a case, it is desirable to have a configuration in which the number of peak amplifying elements can be increased as necessary. In the fourth embodiment, therefore, the configuration of an N-way Donot-tee amplifier capable of connecting N peak amplifying elements will be described.

FIG. 13 is a configuration diagram of the Dono / tee amplifier of the fourth embodiment showing the configuration of an N-way Doherty amplifier capable of changing the number of peak amplifying elements. The basic configuration shown in Fig. 13 is the equivalent circuit of Fig. 11A, where a divider 131 and a divider 132 with a 50 Ω line force are arranged on the input side, and a synthesizer 133 and a synthesizer 134 with a 50 Ω line force on the output side. Is placed.

In the configuration diagram of FIG. 13, similarly to the configuration of FIG. 11, carrier amplification elements C101 and C102 are arranged in the first radiator 121, and the first-way peak amplification elements P101-1 and P102-1 The second radiator 122 having the second force and the second-way peak amplifying elements P101-2 and P102-2 are disposed in the third radiator 123. Furthermore, when increasing the number of peak amplifying elements to N-way, the input side of a pair of 3-way peak amplifying elements is connected to distributor 132, and the output side of the peak amplifying element is connected to synthesizer 133. Connect to. Further, the input side of the other set of 3-way peak amplifying elements is connected to the distributor 131, and the output side of the peak amplifying elements is connected to the combiner 134. [0047] In this way, with respect to the two sets of Doherty amplifiers, the input side of the peak amplifying element is sequentially connected to the distributors 131 and 132 and the output of the peak amplifying element until the N-way peak amplifying element is reached. By sequentially connecting the sides to the synthesizers 133 and 134, an N-Way Doherty amplifier having N peak amplifying elements arranged in parallel can be constructed.

That is, in the fourth embodiment, 50 for connecting a plurality of peak amplifying elements.

Prepare distributors 131, 132 and combiners 133, 134 that also have Ω line power, and connect peak amplifying elements to distributors 131, 132 and combiners 133, 134 in sequence as necessary. That's fine. With this configuration, it is possible to easily change the number of peak amplification elements of the N-Way Doherty amplifier.

Industrial applicability

[0049] According to the present invention, when Doherty amplifiers are combined in parallel, the temperature rise values of the amplification elements having the same function can be made substantially the same value, so that high efficiency and low distortion can be realized. The compensation power amplifier can be effectively used for a large capacity power amplifier.

Claims

The scope of the claims

[1] A Doherty amplifier in which a plurality of Doherty amplifier circuits are connected in parallel,

A Doherty amplifier in which a plurality of amplifying elements having the same function are mounted on the same radiator.

[2] A plurality of amplifying elements having the same function are a plurality of carrier amplifying elements, and a plurality of amplifying elements having another same function are a plurality of peak amplifying elements,

2. The Doherty amplifier according to claim 1, wherein the plurality of carrier amplification elements are mounted on a first radiator, and the plurality of peak amplification elements are mounted on a second radiator.

3. The Doherty amplifier according to claim 2, wherein when the N peak amplifying elements are N-way Doherty amplifiers connected in parallel, the peak amplifying elements in the same Way are mounted on the same radiator. .

4. The Doherty amplifier according to claim 2, wherein when the N peak amplifying elements are N-way Doherty amplifiers connected in parallel, the peak amplifying elements having the same capacity are mounted on the same radiator.

[5] When there are a plurality of second radiators mounted with the peak amplifying element, the first radiator mounted with the plurality of carrier amplifying elements is arranged in the center, and the plurality of second radiators are arranged on both sides thereof. 4. The Dono and tee amplifier according to claim 3, wherein a radiator is disposed.

6. The Doherty amplification according to claim 3, further comprising a distributor and a combiner that can freely increase or decrease the number of connected peak amplifying elements on the input side and the output side of the N-way Dono and tee amplifier.

[7] A Doherty amplifier in which a plurality of Doherty amplifier circuits are connected in parallel,

The first substrate and the second substrate are patterned on the first substrate, the second substrate amplifier circuit is patterned on the second substrate, and the first substrate and the second substrate are patterned. A Doherty amplifier in which a plurality of amplifying elements having the same function are arranged close to each other when a multilayer substrate is formed by stacking.

[8] A plurality of amplifying elements having the same function are a plurality of carrier amplifying elements, and a plurality of amplifying elements having another same function are a plurality of peak amplifying elements,

8. The Doherty amplifier according to claim 7, wherein the plurality of carrier amplifying elements are arranged close to each other, and the plurality of peak amplifying elements are arranged close to each other.