WO2008044050A3 - Nanostructures - Google Patents

Nanostructures Download PDF

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Publication number
WO2008044050A3
WO2008044050A3 PCT/GB2007/003899 GB2007003899W WO2008044050A3 WO 2008044050 A3 WO2008044050 A3 WO 2008044050A3 GB 2007003899 W GB2007003899 W GB 2007003899W WO 2008044050 A3 WO2008044050 A3 WO 2008044050A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanostructures
arsenic
vapour
elongate
contacting
Prior art date
Application number
PCT/GB2007/003899
Other languages
French (fr)
Other versions
WO2008044050A2 (en
Inventor
Max Whitby
Milo Sebastian Peter Shaffer
Original Assignee
Imp Innovations Ltd
Rgb Res Ltd
Max Whitby
Milo Sebastian Peter Shaffer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imp Innovations Ltd, Rgb Res Ltd, Max Whitby, Milo Sebastian Peter Shaffer filed Critical Imp Innovations Ltd
Publication of WO2008044050A2 publication Critical patent/WO2008044050A2/en
Publication of WO2008044050A3 publication Critical patent/WO2008044050A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Catalysts (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Elongate arsenic nanostructures, and methods of making them comprising the steps of forming an arsenic vapour and contacting said vapour with a metal catalyst under an inert atmosphere or under vacuum, at a suitable temperature are disclosed.
PCT/GB2007/003899 2006-10-12 2007-10-12 Nanostructures WO2008044050A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0620335.0 2006-10-12
GB0620335A GB0620335D0 (en) 2006-10-12 2006-10-12 Nanostructures

Publications (2)

Publication Number Publication Date
WO2008044050A2 WO2008044050A2 (en) 2008-04-17
WO2008044050A3 true WO2008044050A3 (en) 2008-07-24

Family

ID=37491459

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/003899 WO2008044050A2 (en) 2006-10-12 2007-10-12 Nanostructures

Country Status (2)

Country Link
GB (1) GB0620335D0 (en)
WO (1) WO2008044050A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031792A (en) * 2001-07-19 2003-01-31 Nec Corp Two-dimensional crystallized semiconductor and its producing method
US20050042465A1 (en) * 2003-08-22 2005-02-24 Clemson Unviersity Thermal CVD synthesis of nanostructures
CN1615904A (en) * 2004-08-31 2005-05-18 东南大学 Process for preparing white arsenic nano particles
WO2006106349A1 (en) * 2005-04-08 2006-10-12 Rgb Research Limited Elongate phosphorus nanostructures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031792A (en) * 2001-07-19 2003-01-31 Nec Corp Two-dimensional crystallized semiconductor and its producing method
US20050042465A1 (en) * 2003-08-22 2005-02-24 Clemson Unviersity Thermal CVD synthesis of nanostructures
CN1615904A (en) * 2004-08-31 2005-05-18 东南大学 Process for preparing white arsenic nano particles
WO2006106349A1 (en) * 2005-04-08 2006-10-12 Rgb Research Limited Elongate phosphorus nanostructures

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BOCA R ET AL: "Thin layers of grey arsenic: a molecular orbital study", CZECHOSLOVAK JOURNAL OF PHYSICS CZECHOSLOVAKIA, vol. 43, no. 8, August 1993 (1993-08-01), pages 813 - 819, XP008091923, ISSN: 0011-4626 *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; MIYAMOTO, YOSHIYUKI: "Two-dimensionally crystallized lamellar and nanotube semiconductors and process for crystallization thereof", XP002481452, retrieved from STN Database accession no. 138:146092 *
DATABASE WPI Week 200564, Derwent World Patents Index; AN 2005-620107, XP002481453 *
ZAMFIRA S ET AL: "Fullerene and nanotubes based on arsenic networks. A modelling study", JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, NATIONAL INSTITUTE FOR OPTOELECTRONICS, vol. 7, no. 4, 1 August 2005 (2005-08-01), pages 2029 - 2034, XP008091806, ISSN: 1454-4164 *

Also Published As

Publication number Publication date
GB0620335D0 (en) 2006-11-22
WO2008044050A2 (en) 2008-04-17

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