WO2008042144A3 - A semiconductor device comprising isolation trenches inducing different types of strain - Google Patents
A semiconductor device comprising isolation trenches inducing different types of strain Download PDFInfo
- Publication number
- WO2008042144A3 WO2008042144A3 PCT/US2007/020598 US2007020598W WO2008042144A3 WO 2008042144 A3 WO2008042144 A3 WO 2008042144A3 US 2007020598 W US2007020598 W US 2007020598W WO 2008042144 A3 WO2008042144 A3 WO 2008042144A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- isolation trenches
- different types
- strain
- semiconductor device
- inducing different
- Prior art date
Links
- 238000002955 isolation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000001939 inductive effect Effects 0.000 title 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7846—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the lateral device isolation region, e.g. STI
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780040260XA CN101536175B (en) | 2006-09-29 | 2007-09-24 | A semiconductor device comprising isolation trenches inducing different types of strain |
GB0906452A GB2456094A (en) | 2006-09-29 | 2007-09-24 | A semiconductor device comprising isolation trenches inducing different types of strain |
JP2009530385A JP2010505269A (en) | 2006-09-29 | 2007-09-24 | Semiconductor device having isolation trenches that induce different types of strain |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006046377A DE102006046377A1 (en) | 2006-09-29 | 2006-09-29 | Semiconductor device e.g. integrated circuit, has active semiconductor regions with peripheries formed by isolation trenches with dielectric filling materials, respectively, where filling materials are comprised of silicon nitride |
DE102006046377.3 | 2006-09-29 | ||
US11/734,320 | 2007-04-12 | ||
US11/734,320 US7547610B2 (en) | 2006-09-29 | 2007-04-12 | Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008042144A2 WO2008042144A2 (en) | 2008-04-10 |
WO2008042144A3 true WO2008042144A3 (en) | 2008-08-14 |
Family
ID=39268957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/020598 WO2008042144A2 (en) | 2006-09-29 | 2007-09-24 | A semiconductor device comprising isolation trenches inducing different types of strain |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008042144A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150295033A1 (en) * | 2012-11-30 | 2015-10-15 | Ps5 Luxco S.A.R.L. | Apparatus and method for manufacturing same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1304734A2 (en) * | 2001-10-17 | 2003-04-23 | STMicroelectronics S.A. | Isolating trench and method for making the same |
US6657276B1 (en) * | 2001-12-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Shallow trench isolation (STI) region with high-K liner and method of formation |
US20040063300A1 (en) * | 2002-10-01 | 2004-04-01 | Taiwan Semiconductor Manufacturing Company | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US20040113174A1 (en) * | 2002-12-12 | 2004-06-17 | International Business Machines Corporation | Isolation structures for imposing stress patterns |
US20040212035A1 (en) * | 2003-04-25 | 2004-10-28 | Yee-Chia Yeo | Strained-channel transistor and methods of manufacture |
US20050260806A1 (en) * | 2004-05-19 | 2005-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | High performance strained channel mosfets by coupled stress effects |
US20060060925A1 (en) * | 2004-09-17 | 2006-03-23 | International Business Machines Corporation | Semiconductor device structure with active regions having different surface directions and methods |
US20060091461A1 (en) * | 2004-10-29 | 2006-05-04 | Jian Chen | Transistor structure with dual trench for optimized stress effect and method therefor |
-
2007
- 2007-09-24 WO PCT/US2007/020598 patent/WO2008042144A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1304734A2 (en) * | 2001-10-17 | 2003-04-23 | STMicroelectronics S.A. | Isolating trench and method for making the same |
US6657276B1 (en) * | 2001-12-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Shallow trench isolation (STI) region with high-K liner and method of formation |
US20040063300A1 (en) * | 2002-10-01 | 2004-04-01 | Taiwan Semiconductor Manufacturing Company | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US20040113174A1 (en) * | 2002-12-12 | 2004-06-17 | International Business Machines Corporation | Isolation structures for imposing stress patterns |
US20040212035A1 (en) * | 2003-04-25 | 2004-10-28 | Yee-Chia Yeo | Strained-channel transistor and methods of manufacture |
US20050260806A1 (en) * | 2004-05-19 | 2005-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | High performance strained channel mosfets by coupled stress effects |
US20060060925A1 (en) * | 2004-09-17 | 2006-03-23 | International Business Machines Corporation | Semiconductor device structure with active regions having different surface directions and methods |
US20060091461A1 (en) * | 2004-10-29 | 2006-05-04 | Jian Chen | Transistor structure with dual trench for optimized stress effect and method therefor |
Non-Patent Citations (1)
Title |
---|
"Improving MOS performance by modulation of stresses using stressed isolation trench dielectric", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 41, no. 1, 1 January 1998 (1998-01-01), pages 487 - 490, XP000772183 * |
Also Published As
Publication number | Publication date |
---|---|
WO2008042144A2 (en) | 2008-04-10 |
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