WO2008018989A3 - Fully- buffered dual in-line memory module with fault correction - Google Patents
Fully- buffered dual in-line memory module with fault correction Download PDFInfo
- Publication number
- WO2008018989A3 WO2008018989A3 PCT/US2007/016661 US2007016661W WO2008018989A3 WO 2008018989 A3 WO2008018989 A3 WO 2008018989A3 US 2007016661 W US2007016661 W US 2007016661W WO 2008018989 A3 WO2008018989 A3 WO 2008018989A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory
- fully
- memory module
- line memory
- blocks
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
A memory module comprises first memory that stores data in memory blocks; second memory that temporarily stores data from at least one of the memory blocks and third memory for storing a relationship between addresses of the at least one of the memory blocks in the first memory and corresponding addresses of the data from the at least one of the memory blocks in the second memory. Storage capacities of the second and third memories are less than a storage capacity of the first memory. A control module selectively transfers data in the at least one of the memory blocks in the first memory to the second memory and stores and retrieves data from the second memory for the at least one of the memory blocks based on the relationship during the testing.
Applications Claiming Priority (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82142206P | 2006-08-04 | 2006-08-04 | |
US60/821,422 | 2006-08-04 | ||
US82398906P | 2006-08-30 | 2006-08-30 | |
US60/823,989 | 2006-08-30 | ||
US82536106P | 2006-09-12 | 2006-09-12 | |
US60/825,361 | 2006-09-12 | ||
US82797606P | 2006-10-03 | 2006-10-03 | |
US60/827,976 | 2006-10-03 | ||
US11/584,946 US7818639B2 (en) | 2002-05-30 | 2006-10-23 | Fully-buffered dual in-line memory module with fault correction |
US11/584,946 | 2006-10-23 | ||
US11/655,449 US7814382B2 (en) | 2002-05-30 | 2007-01-19 | Fully-buffered dual in-line memory module with fault correction |
US11/655,603 | 2007-01-19 | ||
US11/655,451 US7823030B2 (en) | 2002-05-30 | 2007-01-19 | Fully-buffered dual in-line memory module with fault correction |
US11/655,451 | 2007-01-19 | ||
US11/655,603 US7870331B2 (en) | 2002-05-30 | 2007-01-19 | Fully-buffered dual in-line memory module with fault correction |
US11/655,449 | 2007-01-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008018989A2 WO2008018989A2 (en) | 2008-02-14 |
WO2008018989A3 true WO2008018989A3 (en) | 2008-07-10 |
Family
ID=39033464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/016661 WO2008018989A2 (en) | 2006-08-04 | 2007-07-24 | Fully- buffered dual in-line memory module with fault correction |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008018989A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011079780A1 (en) * | 2011-07-26 | 2013-01-31 | Hilti Aktiengesellschaft | Apparatus and method for testing a memory of an electrical device |
US11481126B2 (en) | 2016-05-24 | 2022-10-25 | Micron Technology, Inc. | Memory device error based adaptive refresh rate systems and methods |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5758056A (en) * | 1996-02-08 | 1998-05-26 | Barr; Robert C. | Memory system having defective address identification and replacement |
US6484271B1 (en) * | 1999-09-16 | 2002-11-19 | Koninklijke Philips Electronics N.V. | Memory redundancy techniques |
US6778457B1 (en) * | 2003-02-19 | 2004-08-17 | Freescale Semiconductor, Inc. | Variable refresh control for a memory |
US20040218439A1 (en) * | 2003-01-29 | 2004-11-04 | Stmicroelectronics S.A. | Process for refreshing a dynamic random access memory |
US7073099B1 (en) * | 2002-05-30 | 2006-07-04 | Marvell International Ltd. | Method and apparatus for improving memory operation and yield |
-
2007
- 2007-07-24 WO PCT/US2007/016661 patent/WO2008018989A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5758056A (en) * | 1996-02-08 | 1998-05-26 | Barr; Robert C. | Memory system having defective address identification and replacement |
US6484271B1 (en) * | 1999-09-16 | 2002-11-19 | Koninklijke Philips Electronics N.V. | Memory redundancy techniques |
US7073099B1 (en) * | 2002-05-30 | 2006-07-04 | Marvell International Ltd. | Method and apparatus for improving memory operation and yield |
US20040218439A1 (en) * | 2003-01-29 | 2004-11-04 | Stmicroelectronics S.A. | Process for refreshing a dynamic random access memory |
US6778457B1 (en) * | 2003-02-19 | 2004-08-17 | Freescale Semiconductor, Inc. | Variable refresh control for a memory |
Also Published As
Publication number | Publication date |
---|---|
WO2008018989A2 (en) | 2008-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011034673A3 (en) | Memory device and method | |
WO2008098363A8 (en) | Non-volatile memory with dynamic multi-mode operation | |
EP2040168A3 (en) | Storage system having function to backup data in cache memory | |
WO2007005693A3 (en) | Memory controller interface for micro-tiled memory access | |
WO2011062825A3 (en) | Bit-replacement technique for dram error correction | |
TW200737227A (en) | Memory device and method having multiple address, data and command buses | |
WO2005106886A3 (en) | Refreshing data stored in a flash memory | |
WO2007132456A3 (en) | Memory device with adaptive capacity | |
JP2010192002A5 (en) | ||
TW200745858A (en) | Unified memory and controller | |
WO2008022094A3 (en) | Data storage device | |
WO2009009076A3 (en) | Error correction for memory | |
WO2007076378A3 (en) | Dual mode access for non-volatile storage devices | |
WO2003071554A3 (en) | Non-volatile redundancy adresses memory | |
WO2009097677A8 (en) | Non-volatile memory device having configurable page size | |
TW200735115A (en) | Disabling faulty flash memory dies | |
WO2010062655A3 (en) | Error correction in multiple semiconductor memory units | |
TWI266332B (en) | Redundancy circuit in semiconductor memory device | |
JP2008158955A5 (en) | ||
WO2010076598A8 (en) | Execute-in-place mode configuration for serial non-volatile memory | |
US9230635B1 (en) | Memory parametric improvements | |
WO2011062680A3 (en) | Memory device and method thereof | |
TW200636721A (en) | Memory device with pre-fetch circuit and pre-fetch method | |
WO2008018989A3 (en) | Fully- buffered dual in-line memory module with fault correction | |
WO2006127117A3 (en) | Storage circuit and method therefor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07797008 Country of ref document: EP Kind code of ref document: A2 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07797008 Country of ref document: EP Kind code of ref document: A2 |