WO2007102745A1 - Method for the manufacture of pure silicon metal and amorphous silica by reduction of quartz (sio2) - Google Patents

Method for the manufacture of pure silicon metal and amorphous silica by reduction of quartz (sio2) Download PDF

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Publication number
WO2007102745A1
WO2007102745A1 PCT/NO2007/000092 NO2007000092W WO2007102745A1 WO 2007102745 A1 WO2007102745 A1 WO 2007102745A1 NO 2007000092 W NO2007000092 W NO 2007000092W WO 2007102745 A1 WO2007102745 A1 WO 2007102745A1
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Prior art keywords
quartz
reduction agent
gas
powdered
reduction
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PCT/NO2007/000092
Other languages
French (fr)
Inventor
Arvid Inge Sörvik
Original Assignee
Kopperaa Miljöinvest As
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Publication of WO2007102745A1 publication Critical patent/WO2007102745A1/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/126—Preparation of silica of undetermined type

Definitions

  • the present invention concerns a method for the manufacture of pure silicon metal and amorphous silica powder from quartz (SiO 2 ).
  • the invention furthermore concerns pure silicon and amorphous silica manufactured by the method of the present invention.
  • Amorphous silica is a product which in fine grain form is extensively used as a filler or thickener in chemical industry, particularly in paints, to change product properties like viscosity, thixotropy, filling ability (hold out) and the like. It is also used as an alternative and environmentally friendly additive to various plastic products and in car tyres.
  • the production of highly pure silicon starts with silicon metal of a purity higher than 98 % as raw material.
  • Silicon metal is produced in electric arc furnaces from quartz with coal as reduction agent.
  • HCI gaseous hydrochloric acid
  • TSC trichlorosilane gas
  • STC bi-product silicon tetrachloride
  • Trichlorosilane gas is cooled to liquid form and impurities of higher or lower boiling point is removed in distillation column.
  • the refined trichlorosilane is then evaporated, mixed with hydrogen and passed on to a reduction furnace.
  • silicon in the gas is deposited on electrically heated poly silicone rods which are grown to a predetermined diameter.
  • the flue gas released in the process is cooled and liquefied and distilled thereby isolating the bi-products STC and TCS.
  • the very purest of the silicon from this process is used as electronic silicon while the silicon with slightly lower quality is used for production of solar cells.
  • the object of the present invention is to provide a method allowing production of solar cell quality silicon metal from silicon metal in an inexpensive and competitive way.
  • a deviated object is to provide a method for production of solar cell quality silicon metal in a one step process.
  • the present invention provides pure silicon metal and amorphous silica as defined by the claims 14 and 15 respectively, produced according to the method of the first aspect of the preset invention.
  • fine grain quartz sand (d 50 ⁇ 35 ⁇ m) is reduced in a plasma reactor by means of a suitable reduction agent in a one step process.
  • the reduction agent or agents can comprise gases and solid particles and is/are typically chosen among hydrocarbon gases, particularly methane (CH 4 ), natural gas, hydrogen or a combination of these gases.
  • carbon powder may be used as reduction agent, preferably in combination with gaseous reduction agent or charged to the furnace along with a non-reductive carrier gas. When carbon powder is used it is particularly preferred to add the carbon powder combined with H 2 gas.
  • the indication d50 ⁇ 35 ⁇ m implies that at least 50 % by weight of the finely grained quartz particles have a particle size, defined by their largest linear extension, which is less than 35 ⁇ m.
  • the purity of the silicon metal is decisive for its applicability in soar cells. It is thus important to be able to control all steps in the process that may affect the purity of the end product. It is thus necessary to control the purity of the reduction agents and other optional agents that are added in course of the process either as gases or as solid particles. If, for instance, an extensive content of foreign bodies are present in the quartz raw material, such as undesired amounts of boron, titanium or other trace elements, the raw material must be pre-treated according to per se know methods and techniques to obtain the required purity of the raw material as charged. Such known methods and techniques are mainly conducted in centrifuges or the like in which the separation is based upon differences in density between the quartz and the impurities.
  • Natural gas can, for instance, be an inexpensive and convenient reduction agent if it has the general purity required to avoid extensive and expensive purification of the gas prior to its use. Natural gas comprises several components, predominantly methane but also smaller amounts of heavier hydrocarbons which may also comprise trace amounts of other elements as well as various amounts of carbon monoxide and carbon dioxide. Even powdered carbon must be ensured a high level of purity to be useful in the process of the present invention. In the charges raw material there must not be iron, phosphorous, boron, or titanium present in concentrations exceeding about 0.1 %
  • the quartz raw material provided has a particle size too large to satisfy the d50 ⁇ 35 ⁇ m criterion it must be comminuted prior to being charged to furnace to satisfy this size criterion. If too large particles are used, not all of the raw material is reduced and the end product of metallic silicon will not be sufficiently pure for its intended use.
  • the powdered quartz which due to its fine grain form often is denoted quarts flour, can alternatively be mixed with pure carbon powder before it is charged to the furnace along with the reducing gas or gas mixture.
  • Figure 1 is a schematic side sectional view of a plasma furnace or an electric DC arc furnace.
  • the furnace is equipped with internal linings 2 in floor and walls as the temperature in the reaction zone (arc) 3 typically is above 1800 0 C and often at least 3000 0 C.
  • an anode 4 is arranged in the centre of the furnace.
  • the furnace is closed upwards with a top cover 5 through which a lance 6 is positioned, said lance being provided with one or more through openings 8, 9.
  • a cathode 7 is located at the lower end of the lance.
  • a flame arc 3 occurs between the anode 4 and the cathode 7.
  • SiO 2 is very quickly reduced to metallic silicon and amorphous silica according to the following equation:
  • the lance can have more than one through opening and will normally have a central opening 8 for the reducing gas, optional passive carrier gases and powdered quartz and possibly carbon.
  • a central opening 8 for the reducing gas, optional passive carrier gases and powdered quartz and possibly carbon there will be an annular slot 9 surrounding the central passage intended for charge of a coolant, inert gas such as argon or nitrogen which has the purpose of cooling the cathode to extend its lifetime.
  • a typical progress is as follows. Powdered quartz (optionally mixed with carbon) is charged to the furnace 1 through the opening 8 in the lance 6 with methane (CH 4 ) or another reducing gas as carrier gas. The mixture is reacted in the hot plasma zone or flame arc 3 to form Si, H 2 O and CO/ CO 2 . Some o the silicon metal reacts back with H 2 O to SiO/SiO 2 and H 2 O.
  • the flue gases are sucked out of the furnace (not shown), passes through a combustion chamber (not shown) where unreacted amounts of CO, SiO, and H 2 are combusted with oxygen to CO 2 , SiO 2 and H 2 O before the gases pass through a filter where SiO 2 particles are filtered out while the combusted gases are released through an exhaust pipe of the filter plant.
  • the treatment of the flue gases is not an element of the present invention but should be handled as described due to environmental aspects.
  • parts of - or all of - the quartz powder, optionally mixed with carbon powder, could be injected into the furnace through the furnace top cover or a side wall opening with reducing gases as carrier gas.
  • the produced silicon metal will have a purity sufficient for production of solar cells. If only gas(es) are used as reduction agent(s) the purity of the quartz will be decisive for the purity of the silicon metal.
  • the described process will in addition to produce soar cell quality silicon in one step, reduce the CO 2 emission more than 50% compared to existing processes.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Method for the manufacture of pure silicon metal for use in solar panels and amorphous silica as an additive for paints and other chemical products by reduction of quartz in a single step. Powdered quartz with a grain size d50< 35 m is introduced in a plasma furnace and reduced in one step by a suitable reduction agent, the powdered quartz being charged to the furnace by means of a carrier gas or by means of a gaseous reduction agent. The reduction agent is typically methane, hydrogen or natural gas, optionally in combination with powdered carbon. The invention furthermore concerns pure silicon and amorphous silica manufactured by the method.

Description

Method for the manufacture of pure silicon metal and amorphous silica by reduction of quartz (SiO2)
The present invention concerns a method for the manufacture of pure silicon metal and amorphous silica powder from quartz (SiO2). The invention furthermore concerns pure silicon and amorphous silica manufactured by the method of the present invention.
Background
It is a strong and increasing demand for pure silicon for the production of solar cells, semiconductors and other applications of silicon requiring high purity. Existing technology is based on normal metallurgic silicon metal produced from quartz lumps and carbonaceous materials in a electric arc furnace, purify it in a subsequent chemical process (trichlorosilane SiHCI3) before it can be used for crystal drawing of pure silicon.
Manufacture of silicon metal with the subsequent purification process to achieve the required purity with respect to semiconductors and solar cells is an energy demanding and expensive process. If a direct process allows production of solar cell quality silicon metal in just one step from a pure or purified quartz and quartz sand, the manufacturing cost of the solar cell silicon is reduced and the available quartz sources significantly increased. With lower costs for solar cell silicon this will cause increased solar cell energy production which is desirable not least due to environmental reasons.
Amorphous silica is a product which in fine grain form is extensively used as a filler or thickener in chemical industry, particularly in paints, to change product properties like viscosity, thixotropy, filling ability (hold out) and the like. It is also used as an alternative and environmentally friendly additive to various plastic products and in car tyres.
According to the present invention the production of highly pure silicon starts with silicon metal of a purity higher than 98 % as raw material. Silicon metal is produced in electric arc furnaces from quartz with coal as reduction agent.
Metallic silicon reacts with gaseous hydrochloric acid (HCI) in a fluidized reactor in which trichlorosilane gas (TSC) is formed and in which the bi-product silicon tetrachloride (STC) is used for the production of other products.
Trichlorosilane gas is cooled to liquid form and impurities of higher or lower boiling point is removed in distillation column. The refined trichlorosilane is then evaporated, mixed with hydrogen and passed on to a reduction furnace. In this furnace silicon in the gas is deposited on electrically heated poly silicone rods which are grown to a predetermined diameter. The flue gas released in the process is cooled and liquefied and distilled thereby isolating the bi-products STC and TCS. TCS s recycled while STC is marketed as a separate product. Hydrogen is recycled for re-use in the reduction process. The very purest of the silicon from this process is used as electronic silicon while the silicon with slightly lower quality is used for production of solar cells.
Objects
The object of the present invention is to provide a method allowing production of solar cell quality silicon metal from silicon metal in an inexpensive and competitive way.
A deviated object is to provide a method for production of solar cell quality silicon metal in a one step process.
It is a further object of the invention to provide a method for the production of amorphous silica suitable as an additive to paints and other chemical products as well as to plastic products and car tyres.
The invention
The above mentioned objects are fulfilled by the present invention as set forth in claim 1 and constitute a first aspect of the invention.
According to other aspects the present invention provides pure silicon metal and amorphous silica as defined by the claims 14 and 15 respectively, produced according to the method of the first aspect of the preset invention.
Preferred embodiments of the invention are disclosed in the dependent claims.
According to the present invention fine grain quartz sand (d50 <35 μm) is reduced in a plasma reactor by means of a suitable reduction agent in a one step process. The reduction agent or agents can comprise gases and solid particles and is/are typically chosen among hydrocarbon gases, particularly methane (CH4), natural gas, hydrogen or a combination of these gases. Optionally carbon powder may be used as reduction agent, preferably in combination with gaseous reduction agent or charged to the furnace along with a non-reductive carrier gas. When carbon powder is used it is particularly preferred to add the carbon powder combined with H2 gas.
The indication d50 < 35 μm implies that at least 50 % by weight of the finely grained quartz particles have a particle size, defined by their largest linear extension, which is less than 35 μm.
The purity of the silicon metal is decisive for its applicability in soar cells. It is thus important to be able to control all steps in the process that may affect the purity of the end product. It is thus necessary to control the purity of the reduction agents and other optional agents that are added in course of the process either as gases or as solid particles. If, for instance, an extensive content of foreign bodies are present in the quartz raw material, such as undesired amounts of boron, titanium or other trace elements, the raw material must be pre-treated according to per se know methods and techniques to obtain the required purity of the raw material as charged. Such known methods and techniques are mainly conducted in centrifuges or the like in which the separation is based upon differences in density between the quartz and the impurities.
Correspondingly it should be ensured that no undesired amounts of impurities are present in any reduction agent used. Natural gas can, for instance, be an inexpensive and convenient reduction agent if it has the general purity required to avoid extensive and expensive purification of the gas prior to its use. Natural gas comprises several components, predominantly methane but also smaller amounts of heavier hydrocarbons which may also comprise trace amounts of other elements as well as various amounts of carbon monoxide and carbon dioxide. Even powdered carbon must be ensured a high level of purity to be useful in the process of the present invention. In the charges raw material there must not be iron, phosphorous, boron, or titanium present in concentrations exceeding about 0.1 %
If the quartz raw material provided has a particle size too large to satisfy the d50< 35 μm criterion it must be comminuted prior to being charged to furnace to satisfy this size criterion. If too large particles are used, not all of the raw material is reduced and the end product of metallic silicon will not be sufficiently pure for its intended use.
The powdered quartz, which due to its fine grain form often is denoted quarts flour, can alternatively be mixed with pure carbon powder before it is charged to the furnace along with the reducing gas or gas mixture.
More detailed about the invention
Below the invention is exemplified with reference to Figure 1.
Figure 1 is a schematic side sectional view of a plasma furnace or an electric DC arc furnace.
The furnace is equipped with internal linings 2 in floor and walls as the temperature in the reaction zone (arc) 3 typically is above 1800 0C and often at least 3000 0C. In the centre of the furnace an anode 4 is arranged. The furnace is closed upwards with a top cover 5 through which a lance 6 is positioned, said lance being provided with one or more through openings 8, 9. At the lower end of the lance a cathode 7 is located. At the right electric voltage in relation to type and rate of material charged, a flame arc 3 occurs between the anode 4 and the cathode 7. In this flame arc SiO2 is very quickly reduced to metallic silicon and amorphous silica according to the following equation:
SiO2 + CH4 ► Si + CO + CO2 + H2 + H2O + SiO2 + SiO As mentioned the lance can have more than one through opening and will normally have a central opening 8 for the reducing gas, optional passive carrier gases and powdered quartz and possibly carbon. In addition there will be an annular slot 9 surrounding the central passage intended for charge of a coolant, inert gas such as argon or nitrogen which has the purpose of cooling the cathode to extend its lifetime.
A typical progress is as follows. Powdered quartz (optionally mixed with carbon) is charged to the furnace 1 through the opening 8 in the lance 6 with methane (CH4) or another reducing gas as carrier gas. The mixture is reacted in the hot plasma zone or flame arc 3 to form Si, H2O and CO/ CO2. Some o the silicon metal reacts back with H2O to SiO/SiO2 and H2O. The flue gases are sucked out of the furnace (not shown), passes through a combustion chamber (not shown) where unreacted amounts of CO, SiO, and H2 are combusted with oxygen to CO2, SiO2 and H2O before the gases pass through a filter where SiO2 particles are filtered out while the combusted gases are released through an exhaust pipe of the filter plant. The treatment of the flue gases is not an element of the present invention but should be handled as described due to environmental aspects.
Alternatively parts of - or all of - the quartz powder, optionally mixed with carbon powder, could be injected into the furnace through the furnace top cover or a side wall opening with reducing gases as carrier gas.
Assuming a sufficient purity of the quartz powder and the carbon powder optionally used, the produced silicon metal will have a purity sufficient for production of solar cells. If only gas(es) are used as reduction agent(s) the purity of the quartz will be decisive for the purity of the silicon metal.
The described process will in addition to produce soar cell quality silicon in one step, reduce the CO2 emission more than 50% compared to existing processes.
Tests have show that it is possible to produce silicon metal with a silicon yield as a metal of 60 %. This means that 40 % of added amount of powdered quartz leave the process as silica, a silica with a high purity (>99.9 % SiO2) and having a high specific surface area (> 200 m2/g) which therefore is excellent as a filler in the paint industry and other chemical industry.

Claims

Claims
1. Method for the production of pure silicon metal and amorphous silica by reduction of quartz (SiO2), characterized in that powdered quarts with a grain size d50< 35 μm is introduced in a plasma furnace and thereby reduced in one step using at least one suitable reduction agent, the powdered quartz being introduced by means of a carrier gas or by means of gaseous reduction agent.
2. Method as claimed in claim 1 , characterized in that the reduction agent wholly or partially is constituted by a hydrocarbon gas.
3. Method as claimed in claim 1 , characterized in that the hydrocarbon gas is comprised by methane.
4. Method as claimed in claim 1 , characterized in that the reduction agent comprises powdered carbon which is charged to the furnace together with H2 gas, the H2 gas acting as a carrier gas and as a reduction agent.
5. Method as claimed in claim 1 , characterized in that the reduction agent wholly or partially is comprised by natural gas.
6. Method as claimed in claim 1 , characterized in that natural gas also in used as a carrier gas for the powdered quartz.
7. Method as claimed in claim 1 , characterized in that non-combusted remains of H2, CO, and SiO are combusted in a subsequent combustion chamber to H2O, CO2, and SiO2.
8. Method as claimed in claim 1 , characterized in that the powdered quartz is injected by a inlet conduit through a furnace door with CH4 (methane) as a carrier gas and reduction agent.
9. Method according to any one of the preceding claims, characterized in that a mixture of two or more gases chosen among hydrocarbon gas, H2 and natural gas is used as a carrier gas and as a reduction agent.
10. Method as claimed in claim 1 or claim 4, characterized in that the powdered quartz is mixed with powdered carbon before the mixture is added to the plasma furnace.
11. Method as claimed in any one of the preceding claims, characterized in that the process is conducted with a temperature above 1800 0C.
12. Method as claimed in any one of the preceding claims, characterized in that the process is conducted as a continuous process.
13. Method as claimed in any one of the preceding claims, characterized in that the process is conducted as a discontinuous process.
14. Pure silicon metal characterized in that it is manufactured in accordance with any one of the claims 1-13.
15. Amorphous silica, characterized in that it is manufactured in accordance with any one of the claims 1-13.
PCT/NO2007/000092 2006-03-07 2007-03-07 Method for the manufacture of pure silicon metal and amorphous silica by reduction of quartz (sio2) WO2007102745A1 (en)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007050010A1 (en) * 2007-10-17 2009-06-25 Jan-Philipp Mai Method and apparatus for producing silicon
DE102008010744A1 (en) * 2008-02-20 2009-09-10 I-Sol Ventures Gmbh Reduction of silica
RU2367600C1 (en) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Method for preparation of high-purity silicon
RU2385291C1 (en) * 2008-06-24 2010-03-27 Государственное научное учреждение Всероссийский научно-исследовательский институт электрификации сельского хозяйства Российской Академии Сельскохозяйственных наук (ГНУ ВИЭСХ) Method of production of high purity crystal silicon (versions)
KR101736547B1 (en) * 2014-11-17 2017-05-17 주식회사 포스코 Method and apparatus for manufacturing of metallurgical grade silicon
WO2018141805A1 (en) 2017-02-06 2018-08-09 Solar Silicon Gmbh Method for producing elementary silicon
EP3331825A4 (en) * 2015-08-07 2019-03-20 HPQ-Silicon Resources Inc. Silica to high purity silicon production process
WO2019238808A1 (en) 2018-06-15 2019-12-19 Solar Silicon Gmbh Method for producing elemental silicon
CN111484022A (en) * 2019-12-23 2020-08-04 浙江精功新材料技术有限公司 White carbon black combustion furnace structure
WO2023146906A1 (en) * 2022-01-25 2023-08-03 Ionobell, Inc. Silica material and method of manufacture and silicon derived therefrom
US20230365415A1 (en) * 2020-04-02 2023-11-16 Bosquet Silicon Corp. Composite material
US11905421B2 (en) 2021-05-25 2024-02-20 Ionobell, Inc. Silicon material and method of manufacture
US12040439B2 (en) 2021-10-12 2024-07-16 Ionobell, Inc. Silicon battery and method for assembly
US12057568B2 (en) 2022-07-08 2024-08-06 Ionobell, Inc. Electrode slurry and method of manufacture
US12291457B2 (en) 2021-12-13 2025-05-06 Ionobell, Inc. Porous silicon material and method of manufacture
RU2841183C1 (en) * 2024-05-08 2025-06-03 Игорь Рахматулович Макфузов Method of producing silicon metal

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US4439410A (en) * 1981-10-20 1984-03-27 Skf Steel Engineering Aktiebolag Method of manufacturing silicon from powdered material containing silica
SE461037B (en) * 1987-10-09 1989-12-18 Skf Plasma Tech COATED BY COAL AND SILICON Dioxide CONTINUOUSLY MAKING LIQUID SILICONE IN A REACTOR
JPH03290311A (en) * 1990-04-05 1991-12-20 Kawasaki Steel Corp Production of silicon

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DE2924584A1 (en) * 1979-06-19 1981-01-15 Straemke Siegfried Silicon prodn. for solar cell - from impure silica or silicon by plasma treatment in reducing gas atmos.
US4439410A (en) * 1981-10-20 1984-03-27 Skf Steel Engineering Aktiebolag Method of manufacturing silicon from powdered material containing silica
SE461037B (en) * 1987-10-09 1989-12-18 Skf Plasma Tech COATED BY COAL AND SILICON Dioxide CONTINUOUSLY MAKING LIQUID SILICONE IN A REACTOR
JPH03290311A (en) * 1990-04-05 1991-12-20 Kawasaki Steel Corp Production of silicon

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007050010A1 (en) * 2007-10-17 2009-06-25 Jan-Philipp Mai Method and apparatus for producing silicon
DE102008010744A1 (en) * 2008-02-20 2009-09-10 I-Sol Ventures Gmbh Reduction of silica
DE102008010744B4 (en) * 2008-02-20 2010-09-30 CBD Labs Pty Ltd., Double Bay Reduction of silica
EP2247531A4 (en) * 2008-02-20 2013-02-20 Cbd Energy Ltd Reduction of silica
RU2367600C1 (en) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Method for preparation of high-purity silicon
RU2385291C1 (en) * 2008-06-24 2010-03-27 Государственное научное учреждение Всероссийский научно-исследовательский институт электрификации сельского хозяйства Российской Академии Сельскохозяйственных наук (ГНУ ВИЭСХ) Method of production of high purity crystal silicon (versions)
KR101736547B1 (en) * 2014-11-17 2017-05-17 주식회사 포스코 Method and apparatus for manufacturing of metallurgical grade silicon
EP3331825A4 (en) * 2015-08-07 2019-03-20 HPQ-Silicon Resources Inc. Silica to high purity silicon production process
WO2018141805A1 (en) 2017-02-06 2018-08-09 Solar Silicon Gmbh Method for producing elementary silicon
WO2019238808A1 (en) 2018-06-15 2019-12-19 Solar Silicon Gmbh Method for producing elemental silicon
CN111484022A (en) * 2019-12-23 2020-08-04 浙江精功新材料技术有限公司 White carbon black combustion furnace structure
CN111484022B (en) * 2019-12-23 2022-12-06 浙江精功新材料技术有限公司 White carbon black combustion furnace structure
US20230365415A1 (en) * 2020-04-02 2023-11-16 Bosquet Silicon Corp. Composite material
US11905421B2 (en) 2021-05-25 2024-02-20 Ionobell, Inc. Silicon material and method of manufacture
US12040439B2 (en) 2021-10-12 2024-07-16 Ionobell, Inc. Silicon battery and method for assembly
US12291457B2 (en) 2021-12-13 2025-05-06 Ionobell, Inc. Porous silicon material and method of manufacture
WO2023146906A1 (en) * 2022-01-25 2023-08-03 Ionobell, Inc. Silica material and method of manufacture and silicon derived therefrom
US12057568B2 (en) 2022-07-08 2024-08-06 Ionobell, Inc. Electrode slurry and method of manufacture
RU2841183C1 (en) * 2024-05-08 2025-06-03 Игорь Рахматулович Макфузов Method of producing silicon metal

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