WO2007093163A1 - Générateur électrique - Google Patents

Générateur électrique Download PDF

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Publication number
WO2007093163A1
WO2007093163A1 PCT/DE2007/000284 DE2007000284W WO2007093163A1 WO 2007093163 A1 WO2007093163 A1 WO 2007093163A1 DE 2007000284 W DE2007000284 W DE 2007000284W WO 2007093163 A1 WO2007093163 A1 WO 2007093163A1
Authority
WO
WIPO (PCT)
Prior art keywords
electric generator
generator according
space charge
heat
electrical
Prior art date
Application number
PCT/DE2007/000284
Other languages
German (de)
English (en)
Inventor
Klaus Roth
Original Assignee
Klaus Roth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Klaus Roth filed Critical Klaus Roth
Publication of WO2007093163A1 publication Critical patent/WO2007093163A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/30—Thermophotovoltaic systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to an electrical generator according to the preamble of claim 1.
  • Photovoltaic elements are semiconductor elements with PN transitions, so that a space charge zone or a so-called intrinsic electric field results from the charge distribution in the energy band of the valence electrons.
  • thermosensors are known in the field of detectors, which exploit the thermal excitation of electrons in such a space charge zone.
  • thermal imaging cameras such thermal sensors are arranged as pixels or pixels.
  • the electrons are excited by incident infrared radiation and generate according to the above-mentioned photovoltaic principle, a voltage signal after appropriate amplification for a camera is usable.
  • the object of the invention is, starting from the initially mentioned prior art, to propose a light-independent electric generator.
  • the invention makes use of the fact that, in the case of a semiconductor element, the band gap can also be overcome by means of direct heat input into the semiconductor element.
  • An electron excitation in a space charge zone of a semiconductor element by heat transfer has not yet been provided for the conversion of heat into electrical energy, since in the known semiconductor elements in this case only a very small electrical power is available.
  • thermoelectric generator thus offers the advantage of the direct conversion of thermal energy into electrical energy, wherein only a heat input for the energy conversion is required.
  • the efficiency of such a thermoelectric generator thus depends only on the heat insulation and can therefore be well above the efficiency of known, powered by heat engines Generators are.
  • an electrical generator according to the invention comprises an integrated semiconductor component which comprises the space charge zones.
  • an integrated semiconductor component which comprises the space charge zones.
  • a semiconductor integrated element designed in accordance with modern semiconductor technology, a very large number of coupled space charge zones can be accommodated in manageable macroscopic dimensions. If, for example, an elementary cell consisting of a PN junction and associated interconnects with a layer thickness of one micrometer is provided, then 10 6 such elementary cells are present over a length of one meter. The power output of the individual elementary elements can be added up accordingly, so that macroscopically such a structured thermoelectric element can deliver a technically exploitable energy yield.
  • thermoelectric generator Preferably, in this case, a three-dimensional structure is provided.
  • the structure of a unit cell of the thermoelectric generator according to the invention is similar to that of a photovoltaic element.
  • thermoelectric generator however, the fact can be used that for the heat input no planar structure, but rather a three-dimensional structure can be used.
  • the third dimension it is possible to accommodate a significantly larger variety of stimulable space charge zones in a viable volume and thus provide a thermoelectric generator that is practical in terms of size to power output.
  • the space charge zones are arranged at least partially in layers.
  • the thermal excitation takes place with a physically predetermined transition probability at a given temperature, the number of electrons excited thereby and thus also the maximum amount of current that can be generated from such an elementary cell at the voltage given by the band gap depends on how many electrons excite in the space charge zone be available. Therefore, the formation of a single unit cell over as large a surface area as possible is advantageous in order to excite a larger number of electrons at a given temperature in the space charge zone.
  • an electrical conductor layer arranged between the space charge zones is provided for coupling two adjacent space charge zones.
  • the series connection of a plurality of space charge zones according to the invention is possible without complex structures having to be provided for any interconnects.
  • An electric generator is advantageously additionally provided with a heat source.
  • the heat source itself can be based on different technical or natural principles.
  • a fuel burner is provided as a heat source.
  • Such a fuel burner can not only be designed as a flame burner with an open flame.
  • a catalytic burner in which the reaction of the fuel takes place on a catalytic surface. The combination of both principles is possible without further ado.
  • Compared to the electric power generation with the help of switched heat engines offers the use of a thermoelectric element according to the invention thereby the further advantage that the heat can be provided in a continuous combustion. In turn, this makes it possible to optimize the combustion such that it can take place largely residue-free and thus with the lowest possible pollutant content.
  • thermoelectric semiconductor element In principle, other heat sources, eg. As well as a nuclear reactor for heat supply for the thermoelectric semiconductor element according to the invention conceivable.
  • the heat from natural heat sources such as solar heat, geothermal, or the like would be used, optionally with a heat pump is interposed in order to achieve the required excitation energy with the temperature.
  • a heat pump When using intermediate heat pumps, it is of course necessary to pay attention to a positive energy balance in the generation of electrical energy.
  • Solar collectors that are much cheaper and more efficient than photovoltaic elements would therefore also be used to generate electricity.
  • thermoelectric element according to the invention is constructed as a compact block, it is necessary to bring the supplied heat into the interior of the thermoelectric element.
  • heat transfer elements are preferably provided. These can be configured in different ways. It would be conceivable that attaching channels, which are flowed through by a liquid or gaseous fluid as a heat transport medium.
  • heat-conducting elements can be embedded in the structural design of the thermoelectric semiconductor element.
  • interlayers come from a corresponding one selected heat conducting material with corresponding cross sections to ensure the heat transfer into the interior of the thermoelectric semiconductor element.
  • an electrical conductor layer made of a material, for. B. made of a metal, which results in addition to the good electrical properties and good heat conduction.
  • the electrical conductor layers which are provided between individual space charge zones are at least partially formed as heat-conducting elements.
  • These conductor layers, which are provided as heat-conducting layers, are accordingly made thicker than the conductor layers provided merely for electrical conduction.
  • Suitable semiconductor materials are all known and future semiconductor materials. In this case, it must be kept in mind that the band gap between valence band and conduction band and thus the required excitation energy for the thermally excited electrons and thus also the working temperature of the thermoelectric generator is in a range in which the respective semiconductor material is thermally stable.
  • thermoelectric element for a thermoelectric element according to the invention also organic materials are used, as they are used for example in so-called organic LED. These materials have the advantage that they can be processed in liquid form, resulting in a simple layer structure, for. B. can be realized by spraying.
  • a generator according to the invention can be used at the same time as a cooling element, since the generator extracts heat from the environment.
  • Figure 1 shows a schematic cross section through a section of a semiconductor electrical element for a generator according to the invention
  • FIG. 2 shows a complete electrical generator according to the invention.
  • the semiconductor element 1 according to FIG. 1 is drawn in an excerpted manner in an enlarged scale.
  • a sequence of metallic conductor layers M, positively doped semiconductor layers p and negatively doped semiconductor layers n can be seen.
  • a somewhat thicker drawn metallic conductor layer T also serves as an electrical conductor layer and as a thermal conductor layer.
  • the illustrated layer structure accordingly shows a series connection of a plurality of unit cells (E, M, p, n, M) by which the electrical voltage, which is predetermined by the band gap of the semiconductor material used, is added up.
  • FIG. 2 shows a complete generator 2, in which, in the illustrated embodiment, the generator element 1 is arranged in a liquid heat transport medium 3.
  • Two electrodes 5 connected to the outside metallic conductor layers M form the voltage poles of the semiconductor element 1.
  • Beneath the container 6 for the heat transport medium 3 and the semiconductor element 1 a burner 7 is arranged, as illustrated by an indicated flame 8.
  • a gas stream is guided along the bottom 9 and heated by the flame 8.
  • a heat exchanger in the fuel and exhaust gas stream for the burner 7 is provided to improve its efficiency.
  • the space charge zones according to the invention are located in the transition region between the positively doped semiconductor layers and the negatively doped semiconductor layers. Structure and function of such space charge zones are well known from semiconductor physics and in particular from photovoltaics or sensor technology.
  • the illustrated generator 2 is a
  • DC voltage generator In principle, it is readily possible to generate an AC voltage therefrom by means of appropriate circuits in order to provide AC voltage for corresponding applications. These circuits can for example also directly into the
  • Generator element 1 are integrated by, for example, in the edge layers, the corresponding switching elements are integrated in a known manner.
  • the layer thicknesses for optimizing the semiconductor element 1 can also be varied. The illustrated embodiment shows the uniform layer thicknesses only for the sake of simplified illustration.
  • the structure of a semiconductor element 1 according to the invention is not limited to the provision of planar layers as shown in FIG. What is essential is the coupling of a multiplicity of space charge zones or PN transitions. Any kind of structure that seems suitable can be used. Thus, for example, to improve the heat transfer, a surface-enlarging structure, for example star structures, zigzag structures or the like could also be considered.

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un générateur électrique qui comprend un composant à semi-conducteur présentant une zone de charge spatiale qui résulte d'une jonction PN, le composant à semi-conducteur ayant une bande interdite qui peut être franchie par excitation électronique thermique. Le générateur peut fonctionner indépendamment de la lumière. A cet effet, une pluralité de zones de charge spatiale de ce type sont présentes et connectées entre elles en série et/ou en parallèle.
PCT/DE2007/000284 2006-02-14 2007-02-13 Générateur électrique WO2007093163A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006006935.8 2006-02-14
DE102006006935A DE102006006935A1 (de) 2006-02-14 2006-02-14 Elektrischer Generator

Publications (1)

Publication Number Publication Date
WO2007093163A1 true WO2007093163A1 (fr) 2007-08-23

Family

ID=38190551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/000284 WO2007093163A1 (fr) 2006-02-14 2007-02-13 Générateur électrique

Country Status (2)

Country Link
DE (1) DE102006006935A1 (fr)
WO (1) WO2007093163A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516314A (en) * 1974-11-08 1985-05-14 Sater Bernard L Method of making a high intensity solar cell
EP0218997A2 (fr) * 1985-10-11 1987-04-22 Energy Conversion Devices, Inc. Filtre optique pour la production d'énergie électrique
US4750943A (en) * 1986-02-28 1988-06-14 Tpv Energy Systems, Inc. Thermophotovoltaic system
US20030042846A1 (en) * 2001-09-06 2003-03-06 Forrest Stephen R. Organic photovoltaic devices
WO2003073517A1 (fr) * 2002-02-27 2003-09-04 Midwest Research Institute Dispositif de conversion d'energie photovoltaique monolithique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516314A (en) * 1974-11-08 1985-05-14 Sater Bernard L Method of making a high intensity solar cell
EP0218997A2 (fr) * 1985-10-11 1987-04-22 Energy Conversion Devices, Inc. Filtre optique pour la production d'énergie électrique
US4750943A (en) * 1986-02-28 1988-06-14 Tpv Energy Systems, Inc. Thermophotovoltaic system
US20030042846A1 (en) * 2001-09-06 2003-03-06 Forrest Stephen R. Organic photovoltaic devices
WO2003073517A1 (fr) * 2002-02-27 2003-09-04 Midwest Research Institute Dispositif de conversion d'energie photovoltaique monolithique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"THERMOPHOTOVOLTAIK: STROM AUS WAERMESTRAHLUNG", 7 March 2000, ELEKTRONIK, WEKA FACHZEITSCHRIFTENVERLAG, POING, DE, PAGE(S) 22,24, ISSN: 0013-5658, XP000932814 *

Also Published As

Publication number Publication date
DE102006006935A1 (de) 2007-08-16

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