WO2007085017A1 - Appareil de support pour diaphragme de microphone à condensateur - Google Patents

Appareil de support pour diaphragme de microphone à condensateur Download PDF

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Publication number
WO2007085017A1
WO2007085017A1 PCT/US2007/060852 US2007060852W WO2007085017A1 WO 2007085017 A1 WO2007085017 A1 WO 2007085017A1 US 2007060852 W US2007060852 W US 2007060852W WO 2007085017 A1 WO2007085017 A1 WO 2007085017A1
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
substrate
carrier
microphone according
microphone
Prior art date
Application number
PCT/US2007/060852
Other languages
English (en)
Inventor
Jason W. Weigold
Original Assignee
Analog Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices, Inc. filed Critical Analog Devices, Inc.
Priority to JP2008551569A priority Critical patent/JP5215871B2/ja
Publication of WO2007085017A1 publication Critical patent/WO2007085017A1/fr

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones
    • H04R7/18—Mounting or tensioning of diaphragms or cones at the periphery
    • H04R7/20—Securing diaphragm or cone resiliently to support by flexible material, springs, cords, or strands
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2307/00—Details of diaphragms or cones for electromechanical transducers, their suspension or their manufacture covered by H04R7/00 or H04R31/003, not provided for in any of its subgroups

Definitions

  • the invention generally relates to microphones and, more particularly, the invention relates to support for microphone diaphragms.
  • MEMS devices Microelectromechanical systems
  • MEMS devices are used in a wide variety of applications.
  • MEMS devices currently are implemented as microphones to convert audible signals to electrical signals, as gyroscopes to detect pitch angles of airplanes, and as accelerometers to selectively deploy air bags in automobiles.
  • MEMS devices typically have a movable structure suspended from a substrate, and associated circuitry that both senses movement of the suspended structure and delivers the sensed movement data to one or more external devices (e.g., an external computer).
  • the external device processes the sensed data to calculate the property being measured (e.g., pitch angle or acceleration).
  • MEMS microphones are being increasingly used in a greater number of applications.
  • MEMS microphones are often used in cellular phones and other such devices. To penetrate more markets, however, it is important to obtain satisfactory sensitivity and signal to noise ratios that match more traditional microphones.
  • MEMS microphones typically include a thin diaphragm electrode and a fixed sensing electrode that is positioned alongside the diaphragm electrode.
  • the diaphragm electrode and the fixed sensing electrode act like plates of a variable capacitor.
  • charges are placed on the diaphragm electrode and the fixed sensing electrode.
  • the change in distance between the diaphragm electrode and the fixed sensing electrode results in capacitance changes that correspond to the sound waves.
  • These changes in capacitance therefore produce an electronic signal that is representative of the sound waves.
  • this electronic signal may be processed to reproduce the sound waves, for example, on a speaker.
  • FIG. 1 shows the general structure of a micromachined microphone as known in the art.
  • the micromachined microphone includes a diaphragm 102 and a bridge electrode (i.e. backplate) 104.
  • the diaphragm 102 and the backplate 104 act as electrodes for a capacitive circuit.
  • the backplate 104 may be perforated to allow sound waves to reach the diaphragm 102.
  • sound waves can be made to reach the diaphragm through other channels.
  • sound waves cause the diaphragm to vibrate, and the vibrations can be sensed as changes in capacitance between the diaphragm 102 and the bridge 104.
  • the micromachined microphone typically includes a substantial cavity 106 behind the diaphragm 102 in order to allow the diaphragm 102 to move freely.
  • MEMS microphones use a diaphragm that is anchored completely around its periphery, similar to the head of a drum.
  • Such diaphragms can present a number of problems. For example, in the presence of sound waves, such diaphragms tend to bow rather than move up and down uniformly, as shown in FIG. 2 A. Such bowing can negatively affect the sensitivity of the microphone, specifically due to the limited displacement of the diaphragm causes by internal tension and the variation in distance between portions of the diaphragm and the fixed sensing electrode.
  • MEMS microphones have a diaphragm that is movably connected with its underlying stationary member (referred to hereinafter as a "carrier") by way of a plurality of springs.
  • the springs tend to enable the diaphragm to move up and down uniformly (i.e., like a plunger) , as shown in FIG. 2B.
  • a microphone having a substrate; a diaphragm assembly supported by the substrate, the diaphragm assembly including at least one carrier, a diaphragm, and at least one spring coupling the diaphragm to the at least one carrier, the diaphragm being spaced from the at least one carrier; and at least one insulator between the substrate and the at least one carrier so as to electrically isolate the diaphragm and the substrate.
  • the substrate and the diaphragm may be capacitively coupled to form a fixed plate and a movable plate of a variable capacitor.
  • Each carrier may be coupled to an insulator that is coupled to the substrate.
  • the diaphragm may be perforated and/ or corrugated.
  • the space between the diaphragm and the at least one carrier may be in a nominal plane of the diaphragm.
  • the diaphragm may be stress isolated from the at least one carrier.
  • the at least one carrier may include a single unitary carrier surrounding the diaphragm or may include a plurality of distinct carriers.
  • the at least one insulator may include an oxide.
  • the diaphragm assembly may include polysilicon.
  • the at least one insulator may be formed directly or indirectly on the substrate, and the at least one carrier may be formed directly or indirectly on the at least one insulator.
  • the substrate may be formed from a silicon layer of a silicon-on-insulator wafer.
  • the substrate may include a number of throughholes, in which case the throughholes may allow sound waves to reach the diaphragm from a back- side of the substrate.
  • the microphone may include electronic circuitry that produces a signal in response to diaphragm movement.
  • the electronic circuitry may be formed direct or indirectly on the substrate.
  • a microphone including a substrate; a diaphragm; support means for movably coupling the diaphragm to the substrate, the support means including carrier means for fixed coupling with the substrate and suspension means for movably coupling the diaphragm to the carrier means and spacing the diaphragm from the carrier means; and insulator means for electrically isolating the diaphragm and the substrate.
  • the microphone may further include means for capacitively coupling the substrate and the diaphragm to form a fixed plate and a movable plate of a variable capacitor.
  • the microphone may additionally or alternatively include means for allowing sound waves to reach the diaphragm from a back-side of the substrate.
  • the microphone may additionally or alternatively include means for producing a signal in response to diaphragm movement.
  • FIG. 1 shows the general structure of a micromachined microphone as known in the art
  • FIG. 2A schematically shows the bowing motion of a drum-like MEMS microphone diaphragm
  • FIG. 2B schematically shows the plunging motion of a spring-attached MEMS microphone diaphragm
  • FIG. 3 schematically shows a MEMS microphone that may be produced in accordance with illustrative embodiments of the invention
  • FIG.4 schematically shows a plan view of the microphone of FIG. 3 configured in accordance with illustrative embodiments of the invention
  • FIG. 5 shows a plan view photograph of a specific microphone configured in accordance with illustrative embodiments
  • FIG. 6 shows a close-up plan view picture of the spring shown in FIG. 5;
  • FIG. 7 schematically shows a cross-sectional and partial top view of a microphone configured in accordance with illustrative embodiments of the invention, with the diaphragm in an unreleased state;
  • FIG. 8 schematically shows a cross-sectional and partial top view of a microphone configured in accordance with illustrative embodiments of the invention, with the diaphragm in a released state.
  • various materials are identified using the following legend: "S" indicates single-crystal silicon; “O” indicates oxide; “P” indicates polysilicon; “M” indicates metal; and “Pass” indicates a passivation material such as nitride. Unless the context otherwise suggests, like elements are indicated by like numerals. Also, unless noted otherwise, the drawings are not necessarily drawn to scale.
  • a MEMS microphone includes a diaphragm assembly supported by a substrate.
  • the diaphragm assembly includes at least one carrier, a diaphragm, and at least one spring coupling the diaphragm to the at least one carrier such that the diaphragm is spaced from the at least one carrier.
  • An insulator (or separate insulators) between the substrate and the at least one carrier electrically isolates the diaphragm and the substrate.
  • the carrier may be coupled directly to the insulator and the insulator may be coupled directly to the substrate; alternatively, one or more additional materials may separate the insulator from the substrate and/ or the carrier. With the diaphragm and the substrate electrically isolated from one another, the diaphragm and the substrate may be capacitively coupled and therefore may be used as the two plates of a variable capacitor in order to convert audible signals to electrical signals.
  • FIG. 3 schematically shows an unpackaged MEMS microphone 10 (also referred to as a "microphone chip 10") in accordance with illustrative embodiments of the invention.
  • the microphone 10 includes a static backplate 12 that supports and forms a variable capacitor with a diaphragm assembly including diaphragm 14 (details of the connection of the diaphragm assembly and the backplate 12 are discussed below).
  • the backplate 12 is formed from single crystal silicon
  • the diaphragm assembly including diaphragm 14 is formed from deposited polysilicon
  • the insulator between the backplate 12 and the diaphragm assembly is formed from an oxide.
  • the backplate 12 is formed from the top silicon layer of a silicon-on-insulator (SOI) wafer 20 and so rests on an underlying oxide layer and a base silicon layer.
  • SOI silicon-on-insulator
  • the backplate 12 has a plurality of throughholes 16 that lead to a back-side cavity 18 formed through the underlying oxide layer and the base silicon layer.
  • the microphone 10 may be used or packaged in such a way that sound waves reach the diaphragm 14 through the back-side cavity 18 and throughholes 16.
  • Audio signals cause the diaphragm 14 to vibrate, thus producing a changing capacitance.
  • On-chip or off-chip circuitry converts this changing capacitance into electrical signals that can be further processed. It should be noted that discussion of the microphone 10 shown in FIG.3 is for illustrative purposes only. Other MEMS microphones having similar or dissimilar structure to the microphone 10 shown in FIG. 3 therefore may be used with illustrative embodiments of the invention.
  • FIG. 4 schematically shows a plan view of a microphone 10 configured in accordance with illustrative embodiments.
  • This exemplary microphone 10 has many of the same features as those shown in FIG.3.
  • the microphone 10 includes a substrate 20 with a plurality of carriers 22 (in this case, four carriers) that support the diaphragm 14 via a plurality of springs 24.
  • each carrier 22 is fixedly coupled with the substrate 20.
  • a layer of electrical insulator material e.g., an oxide
  • this arrangement forms an expansion space 26 between at least one of the carriers 22 and the diaphragm 14. Therefore, if subjected to stresses, the diaphragm 14 can freely expand into this space 26. Accordingly, under anticipated stresses, the diaphragm 14 should not mechanically contact the carriers 22 (such contact could degrade system performance).
  • FIG. 5 shows a plan view photograph of a specific microphone 10 configured in accordance with illustrative embodiments
  • FIG. 6 shows a close-up plan view picture of one spring 24 shown in FIG. 5.
  • the specific microphones 10 are examples of various embodiments of the invention. Accordingly, discussion of specific components, such as the shape and number of springs 24, should not be construed to limit various embodiments of the invention.
  • the microphone 10 has a circular diaphragm 14 and four radially extending but circumferentially shaped springs 24 that form the space 26 between the carrier(s) 22 and the outer peripheral edge of the diaphragm 14.
  • the diaphragm assembly includes a single unitary carrier 22 surrounding the diaphragm 14.
  • the springs 24 also should mitigate diaphragm bowing (i.e., when the diaphragm 14 is concave when viewed from its top) when moved downwardly. Accordingly, because of this, the diaphragm 14 should move toward the substrate 20 in a more uniform manner than prior art designs having no space 26 or springs 24.
  • the diaphragm 14 may move upwardly and downwardly in a manner that approximates a plunger. Accordingly, the diaphragm 14 should be able to move up and down more freely, and more area of the inner face of the diaphragm 14 should be usable to produce the underlying signal.
  • FIG. 7 schematically shows a cross-sectional and partial top view of a microphone 10 configured in accordance with illustrative embodiments of the invention, with the diaphragm in an unreleased state.
  • This drawing schematically shows a number of features discussed above, such as the space between the diaphragm 14 and the substrate 20, as well as the space 26 between the diaphragm 14 and the carrier 22.
  • the diaphragm is shown with an underlayer of oxide, which is later removed in order to release the diaphragm.
  • FIG. 8 schematically shows a cross-sectional and partial top view of a microphone configured in accordance with illustrative embodiments of the invention, with the diaphragm in a released state (i.e., with the underlayer of oxide removed).
  • a micromachined microphone may be formed from a silicon or silicon-on-insulator (SOI) wafer.
  • SOI wafer includes a top silicon layer, usually called the device layer, an intermediate insulator (oxide) layer, and a bottom silicon layer that is typically much thicker than the top silicon layer (e.g., approximately 650 microns).
  • the top layer formed in either a silicon or a SOI wafer may be relatively thin (e.g., approximately 10 microns thick) in some embodiments of the invention or may be relatively thick (e.g., approximately 50 microns thick) in other embodiments.
  • the fixed sensing electrode (also referred to herein as a "backplate”) may be formed from the top silicon layer of the wafer, and the diaphragm may be formed so as to be suspended above the top silicon layer. Perforations may be formed in the fixed sensing electrode to allow sound waves to reach the diaphragm from the bottom side of the wafer.
  • An insulating layer e.g., an oxide layer
  • an oxide layer on the back side of the top silicon layer, which may be the inherent oxide layer of a SOI wafer or an oxide layer deposited on a silicon wafer, may be used as an etch stop layer for controlling the machining of the fixed sensing electrode.
  • An exemplary process for forming a micromachined microphone from an SOI wafer involves etching trenches through the top silicon layer of a blank SOI wafer into the intermediate oxide layer and optionally through to the bottom silicon layer. The trenches are then lined with an oxide material. A polysilicon material is then deposited so as to fill the lined trenches and cover the top silicon. The polysilicon material is patterned and etched to form various sacrificial structures that will be removed later. Additional oxide material is deposited. A polysilicon material is deposited and patterned to form the diaphragm assembly including the microphone diaphragm and suspension spring. Oxide is deposited, and holes are etched to expose portions of the backplate and the diaphragm assembly.
  • Metal is deposited and patterned in order to form an electrode for placing electrical charge on the diaphragm, an electrode for placing electrical charge on the backplate, and a plurality of bond pads. There may be electrical connections between bond pads and the electrodes.
  • Passivation layers e.g., an oxide layer covered by a nitride layer, which is a standard passivation layer used for integrated circuitry
  • the passivation layers are etched to expose the bond pad and to expose the diaphragm.
  • Photoresist material is deposited and then patterned to expose a future pedestal area. The oxide at the future pedestal area is then removed by etching.
  • the remaining photoresist material is removed, and the bottom silicon layer is optionally thinned from approximately 650 microns to approximately 350 microns by any of several methods including etching, grinding and polishing.
  • Photoresist material is deposited on the front side of the wafer so as to form a photoresist pedestal.
  • Photoresist material is also deposited on the back side of the wafer and patterned to outline a backside cavity.
  • the backside cavity is formed by etching away a portion of the bottom silicon layer to the intermediate oxide layer.
  • the backside cavity after packaging is approximately one cubic millimeter in volume. A portion of the intermediate oxide layer within the cavity is removed in order to expose the sacrificial polysilicon structures.
  • the sacrificial polysilicon structures are removed, e.g., by exposing the polysilicon to XeF 2 gas or another suitable silicon etchant through the backside cavity. It should be noted that the XeF 2 gas may remove some of the exposed bottom silicon layer, although this is generally undesirable.
  • the oxide behind the diaphragm is removed, e.g., by placing in an appropriate liquid. Then, the front side photoresist material (including the pedestal) is removed, e.g., in a dry etch (not a liquid). This essentially releases the diaphragm and related structures. It should be noted that the pedestal is used to support the delicate microphone structures during release and may not be required in all embodiments, particularly if vapor HF is used to remove the oxide instead of a liquid.
  • An exemplary process for forming a micromachined microphone from a regular silicon wafer involves depositing an oxide layer on the silicon wafer. Then, a polysilicon material is patterned and etched to form the diaphragm assembly. An oxide material is deposited, and holes are etched to expose portions of the substrate and the diaphragm assembly. Metal is deposited and patterned in order to form bond pads and electrodes for placing charge on the microphone diaphragm and backplate. There may be electrical connections between the bond pads and one or more of the electrodes. Passivation layers (e.g., an oxide layer covered by a nitride layer, which is a standard passivation layer used for integrated circuitry) are deposited. The passivation layers are etched to expose the bond pads.
  • Passivation layers e.g., an oxide layer covered by a nitride layer, which is a standard passivation layer used for integrated circuitry
  • a portion of the passivation layers above the microphone structures is removed and the oxide over and partially under the polysilicon structures is removed to form resist pedestal areas.
  • the back side of the silicon wafer is optionally thinned from approximately 650 microns to approximately 350 microns by any of several methods including etching, grinding and polishing the back side, and a layer of oxide is deposited on the back side of the wafer.
  • a photoresist material is deposited on the front side of the wafer, and the oxide on the back side of the wafer is patterned.
  • a photoresist material is deposited and patterned on the back side of the wafer, and trenches are etched into the silicon wafer.
  • the photoresist material is removed from both the front side and the back side, and a new layer of photoresist material is deposited on the front side for protection. Cavities are then etched in the back side of the wafer using the existing oxide as a hard mask. The trenches are then further etched through the silicon layer to the resist pedestal areas of the microphone region. The oxide exposed through the cavities is removed, e.g., by exposing to HF gas. The remaining photoresist material is removed from the front side of the wafer, thereby releasing the microphone structures. Finally, borosilicate glass may be aligned and anodic bonded to the back side of the wafer. Microphone holes may be ultrasonically cut in the glass prior to bonding.
  • micromachined microphones of the types described above may be formed on the same wafer along with an inertial sensor and/ or electronic circuitry and may be packaged in a variety of form factors.
  • the present invention is not limited to any particular shape, configuration, or composition of microphone diaphragm.
  • the microphone may be, for example, round or square, solid or perforated by one or more holes, and/ or flat or corrugated.
  • Different diaphragm configurations might require different or additional processes from those described. For example, additional processes may be used to form holes or corrugations in the diaphragm.
  • the diaphragm assembly is polysilicon, but other materials may be used.
  • the present invention is not limited to any particular type or number of springs for coupling the diaphragm to the at least one carrier. Embodiments of the present invention may use different types and numbers of springs.
  • the present invention is not limited to any particular type of insulator between the substrate and the at least one carrier.
  • the insulator is an oxide, but other types of insulators may be used.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Multimedia (AREA)
  • Micromachines (AREA)

Abstract

Cette invention concerne un microphone comprenant un ensemble diaphragme reposant sur un substrat. L'ensemble diaphragme comprend au moins un support, un diaphragme et au moins un ressort couplant le diaphragme au(x) support(s) de façon que le diaphragme soit espacé du ou des supports. Un isolateur (ou des isolateurs séparés) situés entre le substrat et le ou les supports isole électriquement le diaphragme et le substrat.
PCT/US2007/060852 2006-01-20 2007-01-22 Appareil de support pour diaphragme de microphone à condensateur WO2007085017A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008551569A JP5215871B2 (ja) 2006-01-20 2007-01-22 コンデンサマイクロホン振動板の支持装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US76085406P 2006-01-20 2006-01-20
US60/760,854 2006-01-20

Publications (1)

Publication Number Publication Date
WO2007085017A1 true WO2007085017A1 (fr) 2007-07-26

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PCT/US2007/060852 WO2007085017A1 (fr) 2006-01-20 2007-01-22 Appareil de support pour diaphragme de microphone à condensateur

Country Status (3)

Country Link
JP (1) JP5215871B2 (fr)
CN (2) CN101371614A (fr)
WO (1) WO2007085017A1 (fr)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
ITTO20080983A1 (it) * 2008-12-23 2010-06-24 St Microelectronics Srl Trasduttore acustico integrato in tecnologia mems e relativo processo di fabbricazione
WO2019004933A1 (fr) * 2017-06-28 2019-01-03 Agency For Science, Technology And Research Dispositif acoustique et procédé de formation de celui-ci

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KR101096548B1 (ko) 2009-11-06 2011-12-20 주식회사 비에스이 멤스 마이크로폰 및 그 제조방법
KR101058475B1 (ko) * 2010-05-14 2011-08-24 한국기계연구원 그라핀 맴브레인을 이용한 ｍｅｍｓ 마이크로폰과 그 제조방법
CN103248994A (zh) * 2012-02-06 2013-08-14 苏州敏芯微电子技术有限公司 集成电路与电容式微硅麦克风单片集成的制作方法及芯片
CN105451145B (zh) * 2014-07-17 2018-11-16 中芯国际集成电路制造(上海)有限公司 Mems麦克风及其形成方法
KR102670392B1 (ko) * 2017-06-15 2024-05-30 에이에스엠엘 네델란즈 비.브이. 펠리클 및 펠리클 조립체

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EP0596456A1 (fr) * 1992-11-05 1994-05-11 CSEM, Centre Suisse d'Electronique et de Microtechnique S.A. Procédé de fabrication de transducteurs capacitifs intégrés
JPH08240609A (ja) * 1995-03-02 1996-09-17 Fuji Electric Co Ltd 静電容量式加速度センサ
WO2002015636A2 (fr) * 2000-08-11 2002-02-21 Knowles Electronics, Llc Transducteur a bande large miniature
WO2002052893A1 (fr) * 2000-12-22 2002-07-04 Brüel & Kjær Sound & Vibration Measurement A/S Transducteur capacitif micro-usine tres stable
WO2005111555A1 (fr) * 2004-05-18 2005-11-24 Hosiden Corporation Capteur de vibrations
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Publication number Priority date Publication date Assignee Title
ITTO20080983A1 (it) * 2008-12-23 2010-06-24 St Microelectronics Srl Trasduttore acustico integrato in tecnologia mems e relativo processo di fabbricazione
US8942394B2 (en) 2008-12-23 2015-01-27 Stmicroelectronics S.R.L. Integrated acoustic transducer obtained using MEMS technology, and corresponding manufacturing process
WO2019004933A1 (fr) * 2017-06-28 2019-01-03 Agency For Science, Technology And Research Dispositif acoustique et procédé de formation de celui-ci

Also Published As

Publication number Publication date
CN105704622A (zh) 2016-06-22
CN101371614A (zh) 2009-02-18
JP2009524368A (ja) 2009-06-25
JP5215871B2 (ja) 2013-06-19

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