WO2007080418A1 - Système de régulation de température - Google Patents

Système de régulation de température Download PDF

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Publication number
WO2007080418A1
WO2007080418A1 PCT/GB2007/000100 GB2007000100W WO2007080418A1 WO 2007080418 A1 WO2007080418 A1 WO 2007080418A1 GB 2007000100 W GB2007000100 W GB 2007000100W WO 2007080418 A1 WO2007080418 A1 WO 2007080418A1
Authority
WO
WIPO (PCT)
Prior art keywords
controller
current
magnitude
thermoelectric
thermoelectric controller
Prior art date
Application number
PCT/GB2007/000100
Other languages
English (en)
Inventor
Joseph Alan Barnard
Qi Pan
Original Assignee
Bookham Technology Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0600766.0A external-priority patent/GB0600766D0/en
Application filed by Bookham Technology Plc filed Critical Bookham Technology Plc
Publication of WO2007080418A1 publication Critical patent/WO2007080418A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/021—Control thereof
    • F25B2321/0212—Control thereof of electric power, current or voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element

Definitions

  • the present invention relates to a technique for controlling the temperature of a device, particularly a laser.
  • thermoelectric coolers are a solid state heat-pump, whereby, when a current is passed through the TEC, heat is transferred from one side of the TEC to the other, producing a cold side and a hot side. A component such as a laser diode mounted on the cold side can therefore have heat transferred away from it to the hot side, from where it can be dissipated.
  • TECs can also be used to heat a component by reversing the direction of the current through the TEC. A TEC is therefore useful in applications where a temperature must be maintained, as can be the case with laser diodes.
  • a known TEC control system 100 for controlling the temperature of a laser diode is shown in Figure 1.
  • the system 100 controls the operation of a ⁇ TEC 102 using an H-bridge circuit comprising four MOSFETs (104, 106,.108, 110).
  • the H-bridge allows the direction of the current through the TEC 1.02 to be controlled. For example, if MOSFETs 104 and 110 are "switched on" (i.e.
  • MOSFETs 106 and 108 are "switched off' (i.e. nonconducting), then current can flow from a fixed input voltage VIN 112, through the TEC via MOSFET 104 and 110 to ground. Therefore, the current flows from left to right through the TEC as seen in Figure 1.
  • MOSFETs 106 and 108 are switched on and MOSFETs 104 and 110 are switched off, then the current flows from right to left through the TEC, as seen in Figure 1. Therefore, by controlling the MOSFETs in the H-bridge, the direction of current through the TEC can be controlled.
  • the system 100 utilises a temperature sensor 114 mounted on the side of the TEC on which the laser diode 124 is mounted to monitor the temperature of the TEC 102.
  • the signal indicative of the temperature of the laser diode produced by the temperature sensor 114 is converted to digital data by an analogue to digital converter 116.
  • the digital signal indicative of the temperature of the TEC 102 is then input to a microprocessor 118.
  • the microprocessor 118 uses this reading of the TEC temperature to control the currents through the TEC 102, in order to maintain the temperature.
  • the microprocessor 118 controls the current through the TEC 102 by using digital to analogue converters (DACs) 120, 122 to control the MOSFETs of the H- bridge.
  • DACs digital to analogue converters
  • the microprocessor 118 provides a digital signal to the DACs 120 and 122, which convert this to an analogue voltage level that is applied to the gate terminal of the MOSFETs.
  • the magnitude of the analogue voltage level controls the extent to which the MOSFETs are switched on. A voltage applied to the gate of the MOSFET that is lower than the voltage required to switch the MOSFET to full conduction will allow the MOSFET to conduct, but it will have a resistance related to the value of the gate voltage.
  • MOSFETs are controlled to provide variable levels of resistance, and thereby control the magnitude as well as the direction of the current through the TEC
  • MOSFETs in the H-bridg.e are arranged such that MOSFETs 104 and 106 are N-channel MOSFETs (NMOS) and MOSFETs 108 and 110 are P-channel MOSFETs (PMOS).
  • NMOS N-channel MOSFETs
  • PMOS P-channel MOSFETs
  • the H-bridge can be controlled with two signals from the microprocessor, as the same signal can be applied to the gates of an N-channel and P-channel MOSFET. A signal to activate the N-channel MOSFET will correspondingly deactivate the P- channel MOSFET and vice versa.
  • the supply voltage VIN 112 is generally set relatively high so as to be able to provide the necessary rate of heat transfer even for the worst-case scenario such as where both the efficiency and the thermal resistance for the individual TEC are as poor as might be expected and where the operating conditions are as severe as might be expected.
  • the MOSFETs (104, 106, 108, 110) in the H-bridge are operated as resistive elements in a partially-on state in order to limit the magnitude of the current through the TEC, and as a consequence of such operation dissipate relatively large amounts of power.
  • the power dissipated in the MOSFETs leads to an increase in the temperature of the substrate under the TEC, thereby making it more difficult for the TEC to cool the thermal load. Furthermore, the power dissipated in the MOSFETs also increases the overall power dissipation for a module comprising the TEC control system of Figure 1 , which can be an important factor in low-power systems.
  • a system including: (i) a semiconductor device; (ii) a thermoelectric controller for controlling the temperature of the semiconductor device; (iii) an electrical power supply for powering the thermoelectric controller; (iv) a first device capable of determining both a direction and a magnitude of current through the thermoelectric controller; (v) a second device also capable of determining a magnitude of current through the thermoelectric controller; and (vi) a controller for controlling the first and second devices on the basis of an electrical indicator of the temperature of the semiconductor device so as to achieve a desired direction and magnitude of current through the thermoelectric controller at a level of power consumption lower than could be achieved using the first device alone.
  • the semiconductor device is a laser.
  • the second device is a DC-DC converter.
  • the first device comprises first, second, third and fourth transistors; said first and second transistors are connected in parallel to the power supply in parallel with the third and fourth transistors; and wherein the first and third transistors are connected in series to the thermoelectric controller and the second and fourth transistors are also connected in series to the thermoelectric controller.
  • the controller is a microprocessor and controls the second device and the first, second, third and fourth transistors via respective digital-analogue converters.
  • thermoelectric controller a method for controlling the temperature of a semiconductor device using a thermoelectric controller, using a first device capable of determining both a magnitude and a direction of current through the thermoelectric controller; the method including the steps of providing a second device also capable of determining a magnitude of current through the thermoelectric controller, and controlling the first and second devices to achieve a desired direction and magnitude of current through the thermoelectric controller at a level of electric power consumption lower than could be achieved using the first device alone.
  • a system including: (i) a semiconductor device; (ii) a thermoelectric controller for controlling the temperature of the semiconductor device; (iii) an electrical power supply for powering the thermoelectric controller; (iv) a first device capable of determining the direction of current through the thermoelectric controller; (v) a second device separate from the first device and capable of determining a magnitude of current through the thermoelectric controller; and a controller for controlling the first and second devices on the basis of an electrical indicator of the temperature of the semiconductor device.
  • a controller for controlling the temperature of a semiconductor device using a thermoelectric controller wherein said controller is arranged to control a first device capable of determining both a magnitude and a direction of current through the thermoelectric controller and a second device also capable of determining a magnitude of current through the thermoelectric controller, on the basis of an electrical indicator of the temperature of the semiconductor device so as to achieve a desired direction and magnitude of current through the thermoelectric controller at a level of power consumption lower than could be achieved using the first device alone.
  • an electronic circuit for controlling the temperature of a semiconductor device using a thermoelectric controller, the electronic circuit including: a first device capable of determining both a direction and a magnitude of current through the thermoelectric controller; a second device also capable of determining a magnitude of current through the thermoelectric. controller; and a controller for controlling the first and second devices on the basis of an electrical indicator of the temperature of the semiconductor device so as to achieve a desired direction and magnitude of current through the thermoelectric controller at a level of power consumption lower than could be achieved using the first device alone.
  • a computer program product comprising program code means which when loaded into a computer controls the computer to carry out the method step of claim 5 of controlling the first and second devices to achieve a desired direction and magnitude of current through the thermoelectric controller at a level of electric power consumption lower than could be achieved using the first device alone.
  • Figure 1 shows a known TEC control system
  • Figure 2 shows a laser system according to an embodiment of the present invention.
  • the laser system 200 comprises a TEC 102, an H-bridge comprising four MOSFETs (104, 106, 108, 110), a microprocessor 118, two DACs (120, 122) controlling the MOSFETs 1 . and an ADC 116 reading the value of the TEC temperature from a temperature sensor 114 mounted on the side of the TEC on which the laser diode 124 is mounted.
  • the laser system 200 further comprises a DC-DC converter 202 and a further DAC 204.
  • the DC-DC converter 202 is a high-efficiency device, with an efficiency typically >90% and often produced as an integrated circuit (IC).
  • the DC-DC converter 202 takes as input a DC voltage level (VIN 112 as shown in Figure 2) and produces a DC output voltage 206.
  • the magnitude of the DC output voltage 206 can be controlled by a control input to the DC-DC converter 202, such that the voltage level applied to the control input of the DC-DC converter 202 determines the voltage level of the DC output voltage 206.
  • the voltage applied to the control input is provided by the output of the DAC 204.
  • the system 200 shown in Figure 2 operates as follows.
  • the microprocessor 118 receives an input signal from the temperature sensor 114 via the ADC 116. In response to this input, the microprocessor 118 determines the required direction and rate of heat transfer for the TEC.
  • the microprocessor 118 determines a value for the supply voltage 206 to provide the desired magnitude of current through the TEC 102, and sends a digital signal to the DAC 204, which generates a corresponding analogue voltage level. This analogue voltage level is applied to the control input of the DC-DC converter. In response to the control input voltage level, the DC-DC converter produces an output voltage 206, which is applied to the H-bridge.
  • the microprocessor 118 determines which MOSFETs of the H-bridge need to be activated. Digital signals are sent to the DACs 120 and 122, which produce corresponding analogue voltage levels. The output of the DAC 120 is applied to the gates of the MOSFETs 104 and 108, and the output of the DAC 122 is applied to the gates of the MOSFETs 106 and 110. These signals switch the MOSFETs on or off in order to set the direction of current through the TEC 102.
  • the NMOS 104 and the PMOS 108 will be in opposite on and off states, and likewise for a given signal from DAC 122, the NIVIOS 106 and PMOS 110 will also be in opposite on and off states.
  • the supply voltage 206 applied to the TEC 102 via the H-bridge is varied, and hence the magnitude of the current through the TEC is controlled by adapting the supply voltage, rather than relying on the MOSFETs for doing so.
  • control of the supply voltage is used to determine the magnitude of the current through the TEC, those MOSFETs that are controlled to be “on” only need to be operated in a "fully on” state.
  • the "fully on” resistance of the MOSFETs is low, with a typical NMOS “fully on” resistance of approximately 50 milliohms (“m ⁇ ”) and a typical PMOS "fully on” resistance of approximately 200m ⁇ . Therefore, very little power is dissipated in the MOSFETs, thereby minimising the heat produced and the power consumed.
  • the DACs (120, 122, 204) and ADC 116 may be internal to the microprocessor 118, or external devices.
  • the DACs (120, 122) controlling the MOSFETs (104, 106, 108, 110) must be able to produce both a positive and negative voltage sufficient to fully activate either the N-channel or P-channel MOSFETs in the H-bridge.
  • DACs 120 and 122 are also used to control the amount of the current delivered to the TEC 102 in addition to controlling the direction.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un système qui comprend : (i) un dispositif à semi-conducteurs (124) ; (ii) un régulateur thermoélectrique (102) qui permet de réguler la température du dispositif à semi-conducteurs ; (iii) une alimentation électrique qui permet d'alimenter le régulateur thermoélectrique ; (iv) un premier dispositif (120, 122, 104, 106, 108, 110) pouvant déterminer un sens et une amplitude du courant dans le régulateur thermoélectrique ; (v) un deuxième dispositif (202) pouvant également déterminer une amplitude du courant dans le régulateur thermoélectrique ; et (vi) une unité de commande (118) permettant de commander le premier et le deuxième dispositif sur la base d'un indicateur électrique de la température du dispositif à semi-conducteurs afin d'obtenir un sens et une amplitude désirés du courant dans le régulateur thermoélectrique à un niveau de consommation électrique inférieur à celui pouvant être obtenu uniquement au moyen du premier dispositif.
PCT/GB2007/000100 2006-01-16 2007-01-15 Système de régulation de température WO2007080418A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0600766.0 2006-01-16
GBGB0600766.0A GB0600766D0 (en) 2006-01-16 2006-01-16 Temperature control system
US11/336,951 US20070163271A1 (en) 2006-01-16 2006-01-23 Temperature control system
US11/336,951 2006-01-23

Publications (1)

Publication Number Publication Date
WO2007080418A1 true WO2007080418A1 (fr) 2007-07-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/000100 WO2007080418A1 (fr) 2006-01-16 2007-01-15 Système de régulation de température

Country Status (1)

Country Link
WO (1) WO2007080418A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106406386A (zh) * 2016-12-26 2017-02-15 武汉博激世纪科技有限公司 一种双向tec自动高精度温度控制电路
CN106662378A (zh) * 2014-07-21 2017-05-10 弗诺尼克设备公司 用于操作热电模块以提高效率的系统和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478204A2 (fr) * 1990-09-26 1992-04-01 AT&T Corp. Dispositif régulation thermoélectrique de température pour appareil laser
US20030103364A1 (en) * 2001-12-05 2003-06-05 Alfrey Anthony J. Bipolar current source based on a unipolar power supply
US6981381B1 (en) * 2003-12-16 2006-01-03 Lattice Semiconductor Corp. Linear thermoelectric device driver

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478204A2 (fr) * 1990-09-26 1992-04-01 AT&T Corp. Dispositif régulation thermoélectrique de température pour appareil laser
US20030103364A1 (en) * 2001-12-05 2003-06-05 Alfrey Anthony J. Bipolar current source based on a unipolar power supply
US6981381B1 (en) * 2003-12-16 2006-01-03 Lattice Semiconductor Corp. Linear thermoelectric device driver

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106662378A (zh) * 2014-07-21 2017-05-10 弗诺尼克设备公司 用于操作热电模块以提高效率的系统和方法
CN106406386A (zh) * 2016-12-26 2017-02-15 武汉博激世纪科技有限公司 一种双向tec自动高精度温度控制电路
CN106406386B (zh) * 2016-12-26 2018-09-11 武汉博激世纪科技有限公司 一种双向tec自动高精度温度控制电路
CN108563260A (zh) * 2016-12-26 2018-09-21 武汉博激世纪科技有限公司 一种带有dac恒流电路的高精度温度控制电路
CN108646812A (zh) * 2016-12-26 2018-10-12 武汉博激世纪科技有限公司 一种带有dac放大电路的高精度温度控制电路

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