WO2007056956A1 - Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates - Google Patents
Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates Download PDFInfo
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- WO2007056956A1 WO2007056956A1 PCT/CN2006/003098 CN2006003098W WO2007056956A1 WO 2007056956 A1 WO2007056956 A1 WO 2007056956A1 CN 2006003098 W CN2006003098 W CN 2006003098W WO 2007056956 A1 WO2007056956 A1 WO 2007056956A1
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- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 239000010703 silicon Substances 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 26
- 230000007704 transition Effects 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000000376 reactant Substances 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 66
- 239000000463 material Substances 0.000 description 20
- 239000011701 zinc Substances 0.000 description 20
- 239000011777 magnesium Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002674 ointment Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Definitions
- the present invention relates to the design of semiconductor light- emitting devices. More specifically, the present invention relates to a method for fabricating high-quality semiconductor light-emitting devices on silicon substrates.
- Solid-state light-emitting devices are expected to be the illumination wave of the future.
- High-brightness light-emitting diodes HB-LEDs
- solid-state lasers continue to beam as the driving force in many critical technological fields, from optical data storage, to optical communication networks, and to medical applications.
- blue light- emitting devices which include both blue LEDs and blue lasers.
- nitride-based LEDs and lasers e.g., GaN-based LEDs and lasers
- GaN-based LEDs and lasers not only extends the light-emission spectrum to the green, blue, and ultraviolet region, but also can achieve high light emission efficiency.
- nitride-based materials typically requires matching of the lattice constant and thermal-expansion coefficients of the substrate and epitaxial layers. Consequently, unconventional substrate materials, such as sapphire (Al 2 O 3 ), gallium arsenide (GaAs), gallium phosphide (GaP), and silicon carbide (SiC), are often used to grow InGaAlN, ZnMgCdO, and ZnBeCdO materials in order to achieve such matching.
- substrate materials such as sapphire (Al 2 O 3 ), gallium arsenide (GaAs), gallium phosphide (GaP), and silicon carbide (SiC) are often used to grow InGaAlN, ZnMgCdO, and ZnBeCdO materials in order to achieve such matching.
- Si silicon
- Si has an indirect energy bandgap and is therefore considered to be unsuitable if used directly as light-emitting materials.
- Si has seen very limited use in light-emitting applications in the past.
- many research efforts have been attempted to integrate Si with light-emitting devices.
- Recent successes from these efforts have allowed semiconductor light-emitting materials to be fabricated on conventional Si substrate.
- Si substrates As a substrate material, silicon has both good electrical and thermal conductivity. Furthermore, the costs of silicon substrates are significantly lower than the costs of sapphire or SiC substrates. It also enables integration of light-emitting devices with Si-based electronics. - [0008] Unfortunately, using Si substrate to fabricate InGaAlN and ZnMgCdO based devices faces a serious problem. When exposed to reactant gases containing group-V or group-VI elements (e ; g., gases containing N or O, which are typically used in metal organic chemical vapor deposition, MOCVD), Si atoms on the substrate surface can easily react with these elements.
- group-V or group-VI elements e ; g., gases containing N or O, which are typically used in metal organic chemical vapor deposition, MOCVD
- an amorphous overcoat formed on top of the substrate surface, which can degrade the quality for subsequent film growth.
- an amorphous SiN x overcoat tends to form prior to the formation of In x Ga y Al 1-x -yN based layers
- an amorphous SiO 2 overcoat tends to form prior to the formation of Zn x Mg y Cd 1-x . y O or Zn x BCyCd 1 _ x . y O based layers.
- this amorphous overcoat is difficult to remove, and therefore is detrimental to the subsequent fabrication of the light-emitting structure.
- an Al transition layer on the Si substrate prior to the growth of In x Ga y Al 1-x-y N, Zn x Mg y Cd 1-x-y O, or Zn x BeyCd 1-x-y O based material.
- the Al transition layer can prevent the oxidation or the nitridation of the Si substrate.
- Al is known to be chemically active. This instability can complicate the overall fabrication process and cause potential issues on device reliability.
- One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate.
- the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.
- the Ag transition layer comprises one or more Ag monolayers.
- the Ag transition-layer thickness is not less than 2 angstroms and not more than 50 angstroms.
- the Ag transition-layer thickness is not less than 5 angstroms and not more than 20 angstroms.
- the Ag transition layer is formed on the Si substrate surface by using one of the following techniques: (1) electron beam evaporation; (2) chemical vapor deposition; (3) physical vapor deposition; (4) sputtering deposition; and (5) electroplating.
- the semiconductor light-emitting device comprises one or multiple metallic-transition layers, which is formed on the Ag-coated Si substrate prior to growing the semiconductor light-emitting structure.
- each metallic transition layer can be: an aluminum (Al) layer; a titanium (Ti) layer; or an Al and Ti alloy layer.
- the Si substrate is a (111) Si substrate.
- the semiconductor light-emitting structure can include a number of In x GayAli- x .yN (0 ⁇ x ⁇ l, 0 ⁇ y ⁇ l) layers, a number of Zn s Mg y Cdi -x-y O (0 ⁇ x ⁇ l, 0 ⁇ y ⁇ l) layers, or a number of Zn x Be y Cd 1-x-y O (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1) layers.
- the semiconductor light-emitting structure comprises one of the following structures: a P-N junction; a double heteroj unction (DH); and a multi-quantum well (MQW) structure.
- FIG. 1 illustrates a cross-sectional view of a light-emitting device fabricated on Si substrate in accordance with one embodiment of the present invention.
- FIG. 2 illustrates a cross-sectional view of an In x Ga y Al 1-x . y N-based light-emitting epitaxial structure fabricated on a (111) Si substrate in accordance with one embodiment of the present invention.
- FIG. 3 illustrates a cross-sectional view of a Zn x Mg y Cd 1-x-y O or Zn x Be y Cd 1-x-y O-based light-emitting epitaxial structure fabricated on a (111) Si substrate in accordance with one embodiment of the present invention. •
- the present invention facilitates fabricating high-quality light-emitting devices on a Si substrate by preventing the substrate surface from being exposed to a reactive gas environment. Specifically, a silver (Ag) transition layer is first deposited on a previously cleaned Si substrate prior to fabricating semiconductor light-emitting structures on the substrate. As a result, the Si substrate surface does notinteract with the reactant gases to form an amorphous oxidation or nitridation layer on the substrate, thereby improving the quality of light-emitting thin films.
- a silver (Ag) transition layer is first deposited on a previously cleaned Si substrate prior to fabricating semiconductor light-emitting structures on the substrate.
- the Si substrate surface does notinteract with the reactant gases to form an amorphous oxidation or nitridation layer on the substrate, thereby improving the quality of light-emitting thin films.
- the semiconductor light-emitting structures in the present invention can include In x GayAh. x .yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), Zn x Mg y Cd 1-x . y O (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), or Zn x BeyCdi. x -yO (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ l) materials. Each type of these materials can be a binary, ternary, or quaternary compound.
- an In x Ga 1 Al i - x-y N material can include GaN, InGaN, GaAlN, and InGaAlN.
- embodiments of the present invention are applicable to a wide range of semiconductor devices, including, but not limited to, LEDs, semiconductor lasers, and integrated circuits.
- FIG. 1 illustrates a cross-sectional view of a light-emitting device fabricated on Si substrate in accordance with one embodiment of the present invention.
- Si substrate 102 On the bottom of a structure 100 is a Si substrate 102.
- Si substrate 102 is (111)-Si, which has a diamond-like hexagonal crystalline structure.
- a thin Ag transition layer 104 is formed on Si substrate 102.
- Ag transition layer .104 can be as thin as comprising only a few atom layers.
- Ag transition layer 104 contains sufficient Ag atoms to uniformly cover the entire Si substrate without leaving pinholes, thereby effectively isolating the Si surface from any reactant gases in the subsequent fabrication process. This is due to the good wettability of Ag to (111) Si. Furthermore, the Ag atoms tend to spread over the Si surface without forming clusters, thereby allowing uniform growth of subsequent structures.
- the thickness of Ag transition layer 104 is critically important for achieving its designed functions. Ideally, this layer is sufficiently thick. If grown too thin, Ag transition layer 104 cannot provide adequate protection of the Si substrate surface due to inadequate uniformity and the presence of pinholes. Typically, a thickness of at least a few atomic layers or monolayers is desired. On the other hand, an overly-thick Ag layer cannot extend the crystalline structure of the (111) Si substrate, and may fail to maintain the long-range order of the desired crystalline structure. In one embodiment, the thickness of Ag transition layer 104 can be anywhere between 2 angstroms and 50 angstroms. In a further embodiment, the range of Ag layer thickness can be between 5 angstroms and 20 angstroms.
- Ag transition layer 104 can be formed on the Si substrate by using one of the following techniques: electron beam evaporation, chemical vapor deposition, physical vapor deposition, sputtering deposition, electroplating, and other thin film deposition techniques.
- depositing Ag transition layer 104 on Si substrate 102 can be performed at a separate location from the chamber for fabricating light-emitting structures.
- preparation of the Ag transition layer 104 can be integrated with the fabrication of the semiconductor light-emitting structures in the same fabrication chamber.
- a semiconductor light-emitting structure 106 is formed on Ag transition layer 104, wherein structure 106 can include .
- structure 106 can include .
- In x Ga y Al 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), Zn x Mg y Cdi- x .yO (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1), or Zn x Be y Cd 1-x . y O (0 ⁇ x ⁇ l, 0 ⁇ y ⁇ l) layers.
- semiconductor light-emitting structure 106 can comprise either a single layer of light-emitting material or a multilayer stack of light-emitting materials, wherein each layer of light-emitting material can be either doped or undoped.
- semiconductor light-emitting structure 106 can include the following structures: a P-N junction; a double heteroj unction (DH); a multi-quantum well structure (MQW); or any other light-emitting microstructures.
- Zn x Mg x Cd 1 _ ⁇ -y 0., or Zn x BeyCd ⁇ x .yO materials can be fabricated on Ag coated Si substrate 102 using any known deposition techniques, which can include: physical vapor deposition (PVD), chemical vapor deposition (CVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), molecular beam epitaxy (MBE), halide vapor phase epitaxy (HVPE), or other suitable deposition methods.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- MOCVD metal organic CVD
- PECVD plasma enhanced CVD
- MBE molecular beam epitaxy
- HVPE halide vapor phase epitaxy
- this fabrication process typically contains two steps. In the first step, a semiconductor buffer layer is formed at a relatively low temperature.
- the temperature is increased to a suitable condition to grow the epitaxy layer, and other microstructures required for the device.
- one or more metallic transition layers can be inserted between Ag transition layer 104 and light-emitting structure 106.
- Each additional transition layer can be made of aluminum (Al) 5 titanium (Ti), magnesium (Mg), or an alloy comprising two or more of these metals, for example, an Al and Ti alloy.
- FIG. 2 illustrates a cross-sectional view of an In x Ga y Al 1-x .yN-based light-emitting epitaxial structure 200 fabricated on a (111) Si substrate in accordance with one embodiment of the present invention.
- a (111)-Si substrate 202 is first cleaned before it is placed inside an electron-beam evaporator.
- a 10-angstrom thick Ag overcoat is formed on the bare Si substrate through the electron-beam evaporation process to form a Ag transition layer 204.
- the Ag-coated Si substrate is then placed inside an MOCVD reaction chamber. Prior to further deposition, the substrate surface is treated with H 2 gas at 1050 0 C for five minutes. The temperature is then reduced to 800 0 C and a 200-angstrom AlN x low-temperature buffer layer 206 is deposited on Ag transition layer 204.
- In x Ga y Al 1-x _ y N multi-layer structure 208 is fabricated on top of buffer layer 206.
- In x Ga y Al 1-x -yN multi-layer structure 208 comprises the following layers from the bottom to the top of the structure (not shown): an undoped GaN layer, a Si-doped GaN layer, a InGaN/GaN MQW active layer, and a Mg-doped GaN layer.
- FIG. 3 illustrates a cross-sectional view of a Zn x Mg y Cd 1-x . y O or Zn x Be y Cd 1-x-y O-based light-emitting epitaxial structure 300 fabricated on a (111) Si substrate in accordance with one embodiment of the present invention.
- a Si (111) substrate 302 is cleaned before it is placed inside an MOCVD reaction chamber. Prior to any deposition, the substrate surface is treated with H 2 gas at 1000 0 C for five minutes. The temperature is then reduced to 200 0 C and a 10-angstrom thick Ag overcoat is deposited on (111) Si substrate 302 to form a Ag transition layer 304. While the temperature is maintained at 200 0 C, a 10-angstrom thick Al transition layer 306 is then deposited on top of Ag transition layer 304.
- a 300-angstrom ZnO low-temperature buffer layer 308 is deposited on Al transition layer 306 at 200 0 C. The temperature is then increased to 700 0 C, and a ZnO epitaxial layer 310 is formed on low temperature ZnO buffer layer 308.
- the present invention can generally be applied to any In x Ga y Al 1-x _yN, Zn x Mg y Cd 1-x-y 0, or Zn x Be y Cd 1-x .. y O based light-emitting device fabricated on (111) Si substrate and is not meant to be limited to the exemplary fabrication processes and structures illustrated in FIG. 2 and FIG. 3.
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US12/067,690 US7902556B2 (en) | 2005-11-17 | 2006-11-17 | Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates |
EP06817841A EP1949460A1 (en) | 2005-11-17 | 2006-11-17 | Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates |
JP2008540435A JP2009516377A (en) | 2005-11-17 | 2006-11-17 | Method for manufacturing a high quality semiconductor light emitting device on a silicon substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN200510110566.0 | 2005-11-17 | ||
CNB2005101105660A CN100388519C (en) | 2005-11-17 | 2005-11-17 | Method for preparing high quality light-emitting semiconductor thin film on silicon substrate |
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WO2007056956A1 true WO2007056956A1 (en) | 2007-05-24 |
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US (1) | US7902556B2 (en) |
EP (1) | EP1949460A1 (en) |
JP (1) | JP2009516377A (en) |
KR (1) | KR20080070656A (en) |
CN (1) | CN100388519C (en) |
WO (1) | WO2007056956A1 (en) |
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EP2942804A1 (en) * | 2014-05-08 | 2015-11-11 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
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US8377796B2 (en) * | 2008-08-11 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy from a non-III-V substrate |
US8803189B2 (en) * | 2008-08-11 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy using lateral overgrowth |
US20110079766A1 (en) * | 2009-10-01 | 2011-04-07 | Isaac Harshman Wildeson | Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate |
CN108736317B (en) * | 2018-05-15 | 2021-01-12 | 深圳市光脉电子有限公司 | Light emitting diode epitaxial structure and matrix type laser device thereof |
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CN1159251A (en) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
JP2004207508A (en) * | 2002-12-25 | 2004-07-22 | Shin Etsu Handotai Co Ltd | Light emitting element and its manufacturing method thereof |
CN1667849A (en) * | 2004-03-10 | 2005-09-14 | 信越半导体株式会社 | Light emitting element and manufacturing method thereof |
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US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US20040104395A1 (en) * | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
CN100487927C (en) * | 2004-10-26 | 2009-05-13 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process |
CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
JP2007042682A (en) * | 2005-07-29 | 2007-02-15 | Sanken Electric Co Ltd | Composite semiconductor device of semiconductor light emitting element and protection element, and its manufacturing method |
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- 2006-11-17 EP EP06817841A patent/EP1949460A1/en not_active Withdrawn
- 2006-11-17 KR KR1020087011458A patent/KR20080070656A/en not_active Application Discontinuation
- 2006-11-17 US US12/067,690 patent/US7902556B2/en active Active
- 2006-11-17 WO PCT/CN2006/003098 patent/WO2007056956A1/en active Application Filing
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Patent Citations (3)
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CN1159251A (en) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
JP2004207508A (en) * | 2002-12-25 | 2004-07-22 | Shin Etsu Handotai Co Ltd | Light emitting element and its manufacturing method thereof |
CN1667849A (en) * | 2004-03-10 | 2005-09-14 | 信越半导体株式会社 | Light emitting element and manufacturing method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2942804A1 (en) * | 2014-05-08 | 2015-11-11 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
US9590050B2 (en) | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
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CN100388519C (en) | 2008-05-14 |
US7902556B2 (en) | 2011-03-08 |
US20080210951A1 (en) | 2008-09-04 |
CN1801500A (en) | 2006-07-12 |
JP2009516377A (en) | 2009-04-16 |
EP1949460A1 (en) | 2008-07-30 |
KR20080070656A (en) | 2008-07-30 |
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