WO2007042191A3 - Optoelectronic sensor comprising a semiconductor substrate with a light-sensitive region - Google Patents

Optoelectronic sensor comprising a semiconductor substrate with a light-sensitive region Download PDF

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Publication number
WO2007042191A3
WO2007042191A3 PCT/EP2006/009609 EP2006009609W WO2007042191A3 WO 2007042191 A3 WO2007042191 A3 WO 2007042191A3 EP 2006009609 W EP2006009609 W EP 2006009609W WO 2007042191 A3 WO2007042191 A3 WO 2007042191A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
light
sensitive region
optoelectronic sensor
collecting regions
Prior art date
Application number
PCT/EP2006/009609
Other languages
German (de)
French (fr)
Other versions
WO2007042191A2 (en
Inventor
Manfred Herz
Original Assignee
Ic Haus Gmbh
Manfred Herz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ic Haus Gmbh, Manfred Herz filed Critical Ic Haus Gmbh
Priority to EP06806040A priority Critical patent/EP1934637A2/en
Publication of WO2007042191A2 publication Critical patent/WO2007042191A2/en
Publication of WO2007042191A3 publication Critical patent/WO2007042191A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Measurement Of Optical Distance (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

The aim of the invention is to create a novel optoelectronic sensor. To this end, the inventive sensor (30), especially for using in a reflection light scanner, is provided with at least one semiconductor substrate (35) comprising at least one light-sensitive region, at least two collecting regions (50, 60), and an electrically controllable device (40-43, 70-73) for generating at least two differently oriented drift fields. During operation, the drift fields extend at least partially between the collecting regions (50, 60).
PCT/EP2006/009609 2005-10-10 2006-10-04 Optoelectronic sensor comprising a semiconductor substrate with a light-sensitive region WO2007042191A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06806040A EP1934637A2 (en) 2005-10-10 2006-10-04 Optoelectronic sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200520015973 DE202005015973U1 (en) 2005-10-10 2005-10-10 Optoelectronic sensor
DE202005015973.5 2005-10-10

Publications (2)

Publication Number Publication Date
WO2007042191A2 WO2007042191A2 (en) 2007-04-19
WO2007042191A3 true WO2007042191A3 (en) 2007-11-22

Family

ID=37776133

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/009609 WO2007042191A2 (en) 2005-10-10 2006-10-04 Optoelectronic sensor comprising a semiconductor substrate with a light-sensitive region

Country Status (3)

Country Link
EP (1) EP1934637A2 (en)
DE (1) DE202005015973U1 (en)
WO (1) WO2007042191A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821974A1 (en) * 1998-05-18 1999-11-25 Rudolf Schwarte Phase and amplitude detector of electromagnetic waves from pixels operating in visible, UV and IR wavelengths
WO2005036647A1 (en) * 2003-09-18 2005-04-21 Ic-Haus Gmbh Optoelectronic sensor and device for 3d distance measurement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740955A1 (en) * 1977-09-12 1979-03-22 Siemens Ag Opto-electronic sensing system - has MIS capacitor with buried layer for each sensor, and also for read=out register
DE2740996A1 (en) * 1977-09-12 1979-03-22 Siemens Ag Sensor cell for opto-electronic transducer - has semiconductor chip with two parallel strips, with doping opposite to that of substrate
DE2813254C2 (en) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen One-dimensional CCD sensor with overflow device
DE2842648A1 (en) * 1978-09-29 1980-05-08 Siemens Ag Opto-electronic sensor cell with doped semiconductor substrate - has two parallel slots, with differently doped strip-like zones at slot bottoms
DE3425243A1 (en) * 1984-07-09 1986-02-06 VEB Werk für Fernsehelektronik im VEB Kombinat Mikroelektronik, DDR 1160 Berlin Charge-coupled linear semiconductor sensor arrangement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821974A1 (en) * 1998-05-18 1999-11-25 Rudolf Schwarte Phase and amplitude detector of electromagnetic waves from pixels operating in visible, UV and IR wavelengths
WO2005036647A1 (en) * 2003-09-18 2005-04-21 Ic-Haus Gmbh Optoelectronic sensor and device for 3d distance measurement

Also Published As

Publication number Publication date
WO2007042191A2 (en) 2007-04-19
DE202005015973U1 (en) 2007-02-15
EP1934637A2 (en) 2008-06-25

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