WO2007037796A3 - Chalcogenide pvd components and methods of formation - Google Patents

Chalcogenide pvd components and methods of formation Download PDF

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Publication number
WO2007037796A3
WO2007037796A3 PCT/US2006/031187 US2006031187W WO2007037796A3 WO 2007037796 A3 WO2007037796 A3 WO 2007037796A3 US 2006031187 W US2006031187 W US 2006031187W WO 2007037796 A3 WO2007037796 A3 WO 2007037796A3
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WIPO (PCT)
Prior art keywords
mixture
solid particles
crystalline microstructure
chalcogenide pvd
densifying
Prior art date
Application number
PCT/US2006/031187
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French (fr)
Other versions
WO2007037796A2 (en
Inventor
Ravi Rastogi
Michael R Pinter
Janine K Kardokus
Michael D Payton
Original Assignee
Honeywell Int Inc
Ravi Rastogi
Michael R Pinter
Janine K Kardokus
Michael D Payton
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Publication date
Application filed by Honeywell Int Inc, Ravi Rastogi, Michael R Pinter, Janine K Kardokus, Michael D Payton filed Critical Honeywell Int Inc
Publication of WO2007037796A2 publication Critical patent/WO2007037796A2/en
Publication of WO2007037796A3 publication Critical patent/WO2007037796A3/en

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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3287—Germanium oxides, germanates or oxide forming salts thereof, e.g. copper germanate
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/446—Sulfides, tellurides or selenides
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5427—Particle size related information expressed by the size of the particles or aggregates thereof millimeter or submillimeter sized, i.e. larger than 0,1 mm
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    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
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    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/721—Carbon content
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    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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    • C04B2235/723—Oxygen content
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Abstract

A chalcogenide PVD component forming method includes providing a mixture of solid particles, less than about 90 volume percent (vol%) of the mixture having a crystalline microstructure, and densifying the mixture using pressure and heat. The method includes heat treating the mixture during or after the densifying at conditions sufficient to maintain or increase the percentage of the mixture having a crystalline microstructure without melting the mixture. The densified and heat treated mixture forms a rigid mass exhibiting a bulk formula including at least one element selected from the group consisting of sulfur, selenium, and tellurium. A chalcogenide PVD component includes a rigid mass containing a bonded mixture of solid particles. The mass has about 100 vol% of crystalline microstructure and the solid particles individually exhibit bulk formulas of GexS100-x or GexSe100-x, where x is from 33 to 50.
PCT/US2006/031187 2005-09-19 2006-08-10 Chalcogenide pvd components and methods of formation WO2007037796A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23007105A 2005-09-19 2005-09-19
US11/230,071 2005-09-19

Publications (2)

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WO2007037796A2 WO2007037796A2 (en) 2007-04-05
WO2007037796A3 true WO2007037796A3 (en) 2007-10-04

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TW (1) TW200714722A (en)
WO (1) WO2007037796A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116213A1 (en) * 2008-03-17 2009-09-24 日鉱金属株式会社 Sintered target and method for production of sintered material
US20100108503A1 (en) * 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
US8894826B2 (en) * 2009-09-24 2014-11-25 Jesse A. Frantz Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering
KR101724084B1 (en) * 2011-03-03 2017-04-07 삼성전자 주식회사 Methods of fabricating a semiconductor device
CN110282975B (en) * 2019-07-08 2022-07-01 先导薄膜材料（广东）有限公司 Germanium selenide target material and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0872571A1 (en) * 1997-04-16 1998-10-21 LEYBOLD MATERIALS GmbH Method for making a sputtering target based on Zinc sulphide and sputtering target
US20020100683A1 (en) * 2000-08-18 2002-08-01 Mohan Vasanth N. Physical vapor deposition targets and methods of formation
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0872571A1 (en) * 1997-04-16 1998-10-21 LEYBOLD MATERIALS GmbH Method for making a sputtering target based on Zinc sulphide and sputtering target
US20020100683A1 (en) * 2000-08-18 2002-08-01 Mohan Vasanth N. Physical vapor deposition targets and methods of formation
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity

Also Published As

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WO2007037796A2 (en) 2007-04-05
TW200714722A (en) 2007-04-16

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