WO2007035731A3 - Defectivity and process control of electroless deposition in microelectronics applications - Google Patents

Defectivity and process control of electroless deposition in microelectronics applications Download PDF

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Publication number
WO2007035731A3
WO2007035731A3 PCT/US2006/036479 US2006036479W WO2007035731A3 WO 2007035731 A3 WO2007035731 A3 WO 2007035731A3 US 2006036479 W US2006036479 W US 2006036479W WO 2007035731 A3 WO2007035731 A3 WO 2007035731A3
Authority
WO
WIPO (PCT)
Prior art keywords
defectivity
process control
electroless deposition
microelectronics applications
electroless
Prior art date
Application number
PCT/US2006/036479
Other languages
French (fr)
Other versions
WO2007035731A2 (en
Inventor
Qingyun Chen
Charles Valverde
Vincent Paneccasio
Nicolai Petrov
Daniel Stritch
Christian Witt
Richard Hurtubise
Original Assignee
Enthone
Qingyun Chen
Charles Valverde
Vincent Paneccasio
Nicolai Petrov
Daniel Stritch
Christian Witt
Richard Hurtubise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/230,912 external-priority patent/US7410899B2/en
Application filed by Enthone, Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise filed Critical Enthone
Priority to JP2008532317A priority Critical patent/JP2009509050A/en
Priority to EP06814944A priority patent/EP1938367A2/en
Publication of WO2007035731A2 publication Critical patent/WO2007035731A2/en
Publication of WO2007035731A3 publication Critical patent/WO2007035731A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)

Abstract

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
PCT/US2006/036479 2005-09-20 2006-09-19 Defectivity and process control of electroless deposition in microelectronics applications WO2007035731A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008532317A JP2009509050A (en) 2005-09-20 2006-09-19 Defects and process control of electroless deposition in microelectronic applications
EP06814944A EP1938367A2 (en) 2005-09-20 2006-09-19 Defectivity and process control of electroless deposition in microelectronics applications

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/230,912 2005-09-20
US11/230,912 US7410899B2 (en) 2005-09-20 2005-09-20 Defectivity and process control of electroless deposition in microelectronics applications
US11/243,876 US7615491B2 (en) 2005-09-20 2005-10-05 Defectivity and process control of electroless deposition in microelectronics applications
US11/243,876 2005-10-05

Publications (2)

Publication Number Publication Date
WO2007035731A2 WO2007035731A2 (en) 2007-03-29
WO2007035731A3 true WO2007035731A3 (en) 2009-05-07

Family

ID=37889467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/036479 WO2007035731A2 (en) 2005-09-20 2006-09-19 Defectivity and process control of electroless deposition in microelectronics applications

Country Status (2)

Country Link
EP (1) EP1938367A2 (en)
WO (1) WO2007035731A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2639335B1 (en) * 2012-03-14 2015-09-16 Atotech Deutschland GmbH Alkaline plating bath for electroless deposition of cobalt alloys

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635758A (en) * 1969-08-04 1972-01-18 Photocircuits Corp Electroless metal deposition
US3745039A (en) * 1971-10-28 1973-07-10 Rca Corp Electroless cobalt plating bath and process
US20060280860A1 (en) * 2005-06-09 2006-12-14 Enthone Inc. Cobalt electroless plating in microelectronic devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635758A (en) * 1969-08-04 1972-01-18 Photocircuits Corp Electroless metal deposition
US3745039A (en) * 1971-10-28 1973-07-10 Rca Corp Electroless cobalt plating bath and process
US20060280860A1 (en) * 2005-06-09 2006-12-14 Enthone Inc. Cobalt electroless plating in microelectronic devices

Also Published As

Publication number Publication date
WO2007035731A2 (en) 2007-03-29
EP1938367A2 (en) 2008-07-02

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