WO2007033501A1 - Systeme de compensation de la puissance reactive - Google Patents

Systeme de compensation de la puissance reactive Download PDF

Info

Publication number
WO2007033501A1
WO2007033501A1 PCT/CH2006/000419 CH2006000419W WO2007033501A1 WO 2007033501 A1 WO2007033501 A1 WO 2007033501A1 CH 2006000419 W CH2006000419 W CH 2006000419W WO 2007033501 A1 WO2007033501 A1 WO 2007033501A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching
power semiconductor
groups
semiconductor switch
controllable bidirectional
Prior art date
Application number
PCT/CH2006/000419
Other languages
German (de)
English (en)
Inventor
Peter Barbosa
Peter Steimer
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Publication of WO2007033501A1 publication Critical patent/WO2007033501A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for ac mains or ac distribution networks
    • H02J3/18—Arrangements for adjusting, eliminating or compensating reactive power in networks
    • H02J3/1821—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators
    • H02J3/1835—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control
    • H02J3/1842—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control wherein at least one reactive element is actively controlled by a bridge converter, e.g. active filters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4837—Flying capacitor converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0095—Hybrid converter topologies, e.g. NPC mixed with flying capacitor, thyristor converter mixed with MMC or charge pump mixed with buck
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/20—Active power filtering [APF]

Definitions

  • the invention relates to the field of power electronics. It is based on a reactive power compensation device, in particular for switching a plurality of switching voltage levels according to the preamble of the independent claims.
  • Reactive power compensation devices are used today in a wealth of power electronic applications.
  • the requirements for such a reactive power compensation device are, on the one hand, to generate as few harmonics as possible of phases of an electrical AC network which is commonly connected to the reactive power compensation device and, on the other hand, to transmit the greatest possible power with as few electronic components as possible.
  • Such reactive power compensation devices are often designed as reactive power compensation devices and connected to an electrical alternating voltage network.
  • a suitable reactive power compensation device, in particular for switching a multiplicity of switching voltage levels, is specified in DE 692 05 413 T2.
  • n te switching groups provided for each phase, wherein the n-th first switching group is formed by a first power semiconductor switch and a second power semiconductor switch and the first first switching group to the (n-1) -th switching group respectively by a first power semiconductor switch and a second power semiconductor switch and through a capacitor connected to the first and second power semiconductor switches are formed, where n> 2.
  • Each of the n first switching groups is connected in parallel with the respective adjacent first switching group, wherein the first and the second power semiconductor switch of the first first switching group are connected together.
  • the first and the second power semiconductor switch are each formed by a bipolar transistor with isolated drive electrode (IGBT - Insulated Gate Bipolartransistor) and by a bipolar transistor connected in anti-parallel diode.
  • a problem with a reactive power compensation device according to DE 692 05413 T2 is that the electrical energy stored in the device during operation is very high. Since the electrical energy is stored in the capacitors of the n first switching groups of the reactive power compensation device, the capacitors for this electrical energy, i. in terms of their dielectric strength and / or their capacity, are designed. However, this requires capacitors with a large size, which are correspondingly expensive. In addition, the reactive power compensation device requires a lot of space due to the large capacitors in terms of size, so that a space-saving design, as it is required for many applications, such as traction applications, is not possible. Furthermore, the use of the size of large capacitors causes a high installation and maintenance.
  • the object of the invention is therefore to provide a reactive power compensation device, in particular for the purpose of switching a plurality of switching voltage levels, which stores as low as possible electrical energy during its operation and can be realized in a space-saving manner.
  • Each of the n first switching groups is connected at several provided first switching groups concatenated with the respective adjacent first switching group and the first and the second controllable bidirectional power semiconductor switch of the first first switching group are connected together. Furthermore, n> 1.
  • p second switching groups and p third switching groups are provided, the p-te second switching group and the p-th third switching group each having a first controllable bidirectional power semiconductor switch and a second controllable bidirectional power semiconductor switch and the first second switching group to to the (p-1) -th second switching group and the first third switching group to the (p-1) -th third switching group each having a capacitor connected to the first and second drivable bidirectional power semiconductor switch.
  • each of the p second switching groups is connected in a concatenated manner to the adjacent second switching group and each of the p third switching groups is connected to the adjacent third switching group.
  • first second switching group is connected to the first controllable bidirectional power semiconductor switch of the nth first switching group
  • first third switching group is connected to the second controllable bidirectional power semiconductor switch of the nth first switching group
  • the pth second switching group is connected to the associated second triggering group.
  • Baren bidirectional power semiconductor switch connected to the second controllable bidirectional power semiconductor switch of the p-th third switching group.
  • m fourth switching groups, m fifth switching groups and m sixth switching groups are provided, each having a first controllable bidirectional power semiconductor switch, a second controllable bidirectional power semiconductor switch and a capacitor, where m> 1 and at several provided fourth, fifth and sixth switching groups each the fourth switching groups is concatenated to the respective adjacent fourth switching group, each of the fifth switching groups is connected in a concatenated manner to the respectively adjacent fifth switching group, and each of the sixth switching groups is connected in a chain to the respectively adjacent sixth switching group.
  • first fourth switching group is connected to the pth second switching group
  • first fifth switching group is connected to the connection point of the pth second switching group with the pth third switching group
  • first sixth switching group is connected to the pth third switching group.
  • the capacitors of the mth fourth, fifth and sixth switching groups are connected in series.
  • the n first switching groups serve only to balance the Phasenausgangscicspan- voltage, so that at several existing first switching groups, the capacitors the n first switching groups in the balanced state lead substantially no power and thus store substantially no electrical energy.
  • the total stored electrical energy of the reactive power compensation device can be kept small, whereby the capacitors of the reactive power compensation device only for a small electrical energy to be stored, ie with respect to their dielectric strength and / or their capacity must be designed.
  • the reactive power compensation device requires very little space, so that advantageously a space-saving design, as it is required for many applications, for example for traction applications, is possible.
  • the assembly and maintenance costs can be kept advantageously low due to the small size of the capacitors.
  • the total DC voltage is divided among the capacitors of the mth fourth, fifth and sixth switching groups, so that the voltage load of the individual controllable bidirectional power semiconductor switches of the individual switching groups is significantly lower than the prior art reactive power compensation devices.
  • the controllable bidirectional power semiconductor be designed with advantage only for a small dielectric strength.
  • a qualitative improvement in the time profile of the respective phase output voltage of the reactive power compensation device results from the low capacitance of the capacitors, which also improves the time profile of the power and fewer filter measures on the phase side are necessary.
  • FIG. 1 shows a first embodiment of an inventive reactive power compensation device
  • FIG. 2 shows a second embodiment of the inventive reactive power compensation device.
  • Fig. 1 is a, in particular single-phase, embodiment of an inventive reactive power compensation device, in particular for switching a plurality of switching voltage levels, shown.
  • the reactive power compensation device comprises n for each phase R, S, T provided first switching groups 1.1, ..., 1.n, wherein the n-th first switching group In a first controllable bidirectional power semiconductor switch 2 and a second controllable bidirectional power semiconductor switch 3 and the first first switching group 1.1 to the (n-1) -th switching group 1. (n-1) in each case a first controllable bidirectional power semiconductor switch 2, a second controllable bidirectional power semiconductor switch 3 and connected to the first and second controllable bidirectional power semiconductor switches 2, 3 Capacitor 4 has.
  • the first and the second controllable bidirectional power semiconductor switches 2, 3 of the first first switching group 1.1 are connected to one another.
  • the connection point of the first and the second power semiconductor switch 2, 3 of the first first switching group 1.1 forms, according to FIG. 1, a phase connection, in particular for the phase R.
  • p second switching groups 5.1,..., 5.p and p third switching groups 6.1,..., P are provided, each of which has a first controllable bidirectional power semiconductor switch 7, 8 and a second controllable bidirectional power semiconductor switch 9, 10 and the first second switching group 5.1 to the (p-1) -th second switching group 5.
  • (p-1) each having a capacitor 11, 12 connected to the first and second drivable bidirectional power semiconductor switches 7, 8, 9, 10, wherein p> 1. Since, according to FIG.
  • each of the p second switching groups 5.1 5.p as well as each of the p third switching groups 6.1,..., 6.p is a quadrupole, each of the p second switching groups 5.1,. ., 5.p concatenated with the respectively adjacent second switching group 5.1, ..., 5. p connected and each of the p third switching groups 6.1, ..., 6.p concatenated with the respectively adjacent third switching group 6.1, ..., 6.p connected.
  • the first second switching group 5.1 is connected to the first controllable bidirectional power semiconductor switch 2 of the nth first switching group 1.n, the first third switching group 6.1 to the second controllable bidirectional power semiconductor switch 3 of the nth first switching group 1. n connected and the p-th second switching group 5.p connected to the associated second controllable bidirectional power semiconductor switch 9 with the second controllable bidirectional power semiconductor switch 10 of the p-th third switching group 6.p.
  • the first and second controllable bidirectional power semiconductor switches 7, 9 of the first second switching group 5.1 are interconnected, wherein the connection point of the first and second controllable bidirectional power semiconductor switches 7, 9 of the first second switching group 5.1 with the first controllable bidirectional Power semiconductor switch 2 of the n-th first switching group In is connected.
  • the first and second controllable bidirectional power semiconductor switches 8, 10 of the first third switching group 6.1 are interconnected, wherein the connection point of the first and second controllable bidirectional power semiconductor switch 8, 10 of the first third switching group 6.1 with the second controllable bidirectional power semiconductor switch 3 of the n-th first Switching group 1.n is connected.
  • 1 m fourth switching groups 13.1, ..., 13.m, m fifth switching groups 14.1, ..., 14.m and m sixth switching groups 15.1, ..., 15.m are provided according to FIG., Which each have a first controllable bidirectional power semiconductor switch 16, 17, 18, a second controllable bidirectional power semiconductor switch 19, 20, 21 and a capacitor 22, 23, 24 have, where m> 1.
  • Each of the fourth switching groups 13.1,..., 13.m is linked to the respectively adjacent fourth switching group 13.1, 13.m, each of the fifth switching groups 14.1,.
  • the first fourth switching group 13.1 is connected to the pth second switching group 5.p
  • the first fifth switching group 14.1 is connected to the connection point of the pth second switching group 5.p to the pth third switching group 6.p
  • the first sixth switching group 15.1 connected to the pth third switching group 6.p.
  • the capacitors 22, 23, 24 of the mth fourth, fifth and sixth switching group 13.m, 14.m, 15.m are connected in series.
  • n first switching groups 1.1, ..., 1.n are the n first switching groups 1.1, ..., 1.n only for balancing the phase output AC voltage, so that at a plurality of existing first switching groups 1.1 1.n the capacitors 4 of the n first switching groups 1.1, ..., 1.n in the balanced, ie in the balanced state lead essentially no electricity and thus also store substantially no electrical energy.
  • the stored electrical energy of the reactive power compensation device as a whole can be kept small, whereby the capacitors 4 of the reactive power compensation device have to be designed only for a small electrical energy to be stored, ie with regard to their dielectric strength and / or their capacitance. Due to the small size of the capacitors 4 requires the reactive power compensation device very little space, so that advantageously a space-saving design, as it is required for many applications, for example for traction applications, is possible. Furthermore, due to the small size of the capacitors 4, the assembly and maintenance effort can be kept advantageously small.
  • every fourth, fifth and sixth switching group 13.1,. 14.1, ..., 14.m; 15.1, ..., 15.m respectively the capacitor 22, 23, 24 of the associated switching group with the first and second controllable bidirectional power semiconductor switch 16, 17, 18, 19, 20, 21 of the associated switching group 13.1, ..., 13. m; 14.1, ..., 14.m; 15.1, ..., 15.m is connected.
  • the first and second drivable bidirectional power semiconductor switches 16, 19 of the first fourth switching group 13.1 are connected to each other, wherein the connection point of the first and second drivable bidirectional power semiconductor switches 16, 19 of the first fourth switching group 13.1 with the first controllable bidirectional power semiconductor switch 7 of the pth second switching group 5.p is connected. Furthermore, the first and second controllable bidirectional power semiconductor switches 17, 20 of the first fifth switching group 14.1 are interconnected, wherein the connection point of the first and second controllable bidirectional power semiconductor switch 17, 20 of the first fifth switching group 14.1 with the connection point of the pth second switching group. 5 .p is connected to the pth third switching group 6.p.
  • first and second controllable bidirectional power semiconductor switches 18, 21 of the first sixth switching group 15.1 are interconnected, wherein the connection point of the first and second controllable bidirectional power semiconductor switches 18, 21 of the first sixth switching group 15.1 with the first controllable bidirectional power semiconductor switch 8 of the pth third Switching group 6.p is connected.
  • 3n + 1) switching voltage levels of the inventive reactive power compensation device can be switched.
  • n first switching groups 1.1 1.n greater than the number of p second and third switching groups 5.1, ..., 5.p; 6.1, ..., 6.p and greater than the number of m fourth, fifth and sixth switching groups 13.1, ..., 13. m; 14.1, ..., 14.m; 15.1, ..., 15.m is.
  • the respective first and second controllable bidirectional power semiconductor switches 2, 3, 7, 8, 9, 10, 16, 17, 18, 19, 20, 21 are arranged by a controllable power semiconductor component with a unidirectional current-carrying direction, for example by a bipolar transistor with insulated Drive electrode (IGBT - Insulated Gate Bipolartransistor), and formed by an anti-parallel connected passive non-controllable power semiconductor device with unidirectional current carrying direction, for example by a diode.
  • IGBT Insulated Gate Bipolartransistor
  • controllable power semiconductor components having a unidirectional current-carrying direction each have a mutually opposite controlled main-current direction.
  • n first switching groups 1.1,... In the two first controllable bidirectional power semiconductor switches 2 respectively adjacent first switching groups 1.1, ..., 1.n are integrated in one module, ie that at several The first controllable bidirectional power half is present in the first switching groups 1.1,. conductor switch 2 of the nth first switching group 1.n and the first controllable bidirectional cruhalbieiterschalter 2 of the (n-1) -th first switching group 1. (n-1) are integrated in a module and the first controllable bidirectional cruhalbieiterschalter 2 of (n -1) -th first switching group 1. (n-1) and the first controllable bidirectional power semiconductor switch 2 of the (n-2) -th first switching group 1.
  • (n-2) are integrated in a module, etc. Furthermore It has proven to be advantageous that the two second controllable bidirectional cruhalbieiterschalter 3 respectively adjacent first switching groups 1.1 1.n are integrated in one module, ie at several existing first switching groups 1.1, ..., 1.n the second controllable bidirectional cruhalbieiterschalter 3 of n-th first switching group 1.n and the second controllable bidirectional cruhalbieiterschalter 3 of the (n-1) -th first switching group 1. (n-1) are integrated in a module and the zw eite controllable bidirectional cruhalbieiterschalter 3 of the (n-1) -th first switching group 1.
  • first controllable bidirectional power semiconductor switch 2 and the second controllable bidirectional cruhalbieiterschalter 3 is integrated in a module.
  • modules are usually standard half-bridge modules and accordingly simple in construction, less susceptible to faults and, moreover, inexpensive.
  • the two first controllable bidirectional power semiconductor switches 7 respectively adjacent second switching groups 5.1 5.p are integrated in a module, ie in the manner described in detail above for the n first switching groups 1.1 1.n, and the two second power semiconductor switches 9 of respectively adjacent second switching groups 5.1,..., 5.p in a module , that are integrated in the manner described in detail above for the n first switching groups 1.1, ..., 1.n.
  • the first controllable bidirectional power semiconductor switch 7, 8 and the second controllable bidirectional power semiconductor switch 9, 10 is integrated in a module.
  • the above-mentioned modules are common standard modules and therefore simple in construction, less susceptible to interference and also inexpensive.
  • the two first controllable bidirectional power semiconductor switches 17 are each adjacent fifth switching groups 14.1, a module, that is, in the manner described in detail above for the n first switching groups 1.1 1.n integrated, and the two second power semiconductor switch 20 respectively adjacent fifth switching groups 14.1, ..., 14.m in a module, ie in the above for the n first switching groups 1.1, ..., 1.n described in detail, integrated.
  • the two first controllable bidirectional power semiconductor switches 18 are each adjacent sixth switching groups 15.1, 15.m in a module , that is, in the manner described in detail above for the n first switching groups 1.1, ..., 1.n integrated, and the two second power semiconductor switch 21 respectively adjacent sixth switching groups 15.1, ..., 15.m in a module, ie in the above for the n first switching groups 1.1, ..., In detailed manner, integrated.
  • each of the first controllable bidirectional power semiconductor switch 16, 17, 18 and the second controllable bidirectional power semiconductor switch 19, 20, 21 is integrated in a module.
  • the above-mentioned modules are usually standard modules and accordingly simple in construction, less susceptible to interference and also inexpensive.
  • the mth fourth switching groups 13.m of the phases R, S, T are preferably connected in parallel, and the mth fifth switching groups 14.m of the phases R, S, T are also connected connected in parallel with each other and the m-th sixth switching groups 15.m the phases R, S, T also connected in parallel.
  • the respective connections are made to the capacitors 22 of the respective m-th fourth switching groups 13.m or to the capacitors 23 of the respective mth fifth switching groups 14.m or to the capacitors 24 of the respective mth sixth switching groups 15.m.
  • the capacitors 22 of the mth fourth switching groups 13.m of the phases R, S, T are preferably combined to form a capacitor, the capacitors 23 of the mth fifth switching groups 14.m the phases R, S, T summarized in a capacitor and the capacitors 24 of the m-th sixth switching groups 15.m the phases R, S, T are also combined to form a capacitor.
  • the reactive power compensation device thus represents a solution characterized by a low stored electrical energy during its operation and by a space-saving design and thus uncomplicated, robust and less susceptible to failure.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

La présente invention concerne un système de compensation de la puissance réactive, notamment conçu pour commuter une pluralité de niveaux de tension de commutation, avec n premiers groupes de commutation (1.1, ..., 1.n) pour chaque phase (R, S, T), n ≥ 2. Afin de réduire l'énergie accumulée par le système de compensation de la puissance réactive, p deuxièmes groupes de commutation (5.1, ..., 5.p) et p troisièmes groupes de commutation (6.1, ..., 6.p) avec p ≥ 1, ainsi que m quatrièmes groupes de commutation (13.1, ..., 13.m), m cinquièmes groupes de commutation (14.1, , 14.m) et m sixièmes groupes de commutation (15.1, ..., 15.m) avec m ≥ 1 sont prévus. Ces groupes de commutation présentent respectivement un premier commutateur à semi-conducteur de puissance bidirectionnel (16, 17, 18) qui peut être commandé, un second commutateur à semi-conducteur de puissance bidirectionnel (19, 20, 21) qui peut être commandé, ainsi qu'un condensateur (22, 23, 24). Chacun des quatrièmes groupes de commutation (13.1, ..., 13.m) est relié à chaque quatrième groupe de commutation voisin (13.1, ..., 13.m). Chacun des cinquièmes groupes de commutation (14.1, , 14.m) est relié à chaque cinquième groupe de commutation voisin (14.1, , 14.m). Chacun des sixièmes groupes de commutation (15.1, ..., 15.m) est relié à chaque sixième groupe de commutation voisin (15.1, ..., 15.m). Le premier quatrième groupe de commutation (13.1) est relié au p-ième deuxième groupe de commutation (5.p). Le premier cinquième groupe de commutation (14.1) est relié au point de liaison du p-ième deuxième groupe de commutation (5.p) et du p-ième troisième groupe de commutation (6.p). Le premier sixième groupe de commutation (15.1) est relié au p-ième troisième groupe de commutation (6.p). Les condensateurs (22, 23, 24) du m-ième quatrième, cinquième et sixième groupe de commutation (13.m, 14.m, 15.m) sont reliés en série les uns aux autres.
PCT/CH2006/000419 2005-09-19 2006-08-09 Systeme de compensation de la puissance reactive WO2007033501A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005044636.1 2005-09-19
DE102005044636 2005-09-19

Publications (1)

Publication Number Publication Date
WO2007033501A1 true WO2007033501A1 (fr) 2007-03-29

Family

ID=37081592

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2006/000419 WO2007033501A1 (fr) 2005-09-19 2006-08-09 Systeme de compensation de la puissance reactive

Country Status (1)

Country Link
WO (1) WO2007033501A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150311776A1 (en) * 2013-01-29 2015-10-29 Schneider Toshiba Inverter Europe Sas Cascaded multi-level Power converter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002501A1 (fr) * 1991-07-25 1993-02-04 Centre National De La Recherche Scientifique (Cnrs) Dispositif electronique de conversion d'energie electrique
WO2005036719A1 (fr) * 2003-10-17 2005-04-21 Abb Research Ltd Circuit convertisseur pour commander une pluralite de niveaux de tension de commutation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002501A1 (fr) * 1991-07-25 1993-02-04 Centre National De La Recherche Scientifique (Cnrs) Dispositif electronique de conversion d'energie electrique
WO2005036719A1 (fr) * 2003-10-17 2005-04-21 Abb Research Ltd Circuit convertisseur pour commander une pluralite de niveaux de tension de commutation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GATEAU G ET AL: "STACKED MULTICELL CONVERTER (SMC): TOPOLOGY AND CONTROL", EPE 2001. 9TH. EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS. (CD-ROM VERSION). GRAZ, AUG. 27 - 29, 2001, EPE . EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, BRUSSELS : EPE ASSOCIATION, BE, 2001, pages 1 - 10, XP001044195, ISBN: 90-75815-06-9 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150311776A1 (en) * 2013-01-29 2015-10-29 Schneider Toshiba Inverter Europe Sas Cascaded multi-level Power converter
US9735664B2 (en) * 2013-01-29 2017-08-15 Schneider Toshiba Inverter Europe Sas Cascaded multi-level power converter

Similar Documents

Publication Publication Date Title
EP1673849B1 (fr) Circuit convertisseur pour commander une pluralite de niveaux de tension de commutation
EP1976107B1 (fr) Cellule de commutation et dispositif de convertisseur à plusieurs niveaux doté dudit cellule de commutation
EP2080262B1 (fr) Circuit de conversion pour connecter une pluralité de niveaux de tensions de commutation
EP1815586B1 (fr) Circuit convertisseur concu pour commuter une pluralite de niveaux de tension de commutation
EP1695434B1 (fr) Circuit convertisseur comprenant deux convertisseurs partiels
EP3496259B1 (fr) Système de convertisseur électrique
EP3075056B1 (fr) Procédé pour faire fonctionner un onduleur et onduleur comportant un commutateur placé entre un point médian d'un circuit intermédiaire à tension continue et une borne destinée à un conducteur neutre d'un réseau à courant alternatif
WO2017016675A1 (fr) Convertisseur gigogne
EP3036823B1 (fr) Mutateur multi-niveaux
EP1647089B1 (fr) Circuit convertisseur
WO2002049196A2 (fr) Convertisseur a condensateurs de circuit intermediaire integres
EP3231054A1 (fr) Module de compensation de puissance réactive pour la mise en oeuvre avec des tensions nominales essentiellement supérieures à 1000 v
EP1453192B1 (fr) Circuit convertisseur avec protection de courant de court circuit
EP1443648A1 (fr) Circuit convertisseur pour commutation de trois niveaux
WO2007033501A1 (fr) Systeme de compensation de la puissance reactive
WO2007033502A1 (fr) Systeme de compensation de la puissance reactive
EP3417539B1 (fr) Convertisseur de puissance
DE102005044641A1 (de) Blindleistungskompensationseinrichtung
DE102005044639A1 (de) Blindleistungskompensationseinrichtung
EP2584686A1 (fr) Circuit d'équilibrage pour des condensateurs de circuit intermédiaire en série et procédé de fonctionnement d'un tel circuit
WO2004105225A2 (fr) Circuit convertisseur
DE102009028915A1 (de) Ansteuersystem zum Betreiben eines Mikrostoßantriebs
WO2007051321A2 (fr) Circuit de conversion destine a convertir une pluralite de niveaux de tension de commutation
WO2013064318A2 (fr) Convertisseur de tension comportant un premier circuit parallèle
EP1298781B1 (fr) Dispositif de conversion de puissance et procédé pour adapter une tension continue variable

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06761270

Country of ref document: EP

Kind code of ref document: A1