WO2007009889A1 - Improved materials for insulators in organic field effect transistors - Google Patents

Improved materials for insulators in organic field effect transistors Download PDF

Info

Publication number
WO2007009889A1
WO2007009889A1 PCT/EP2006/063966 EP2006063966W WO2007009889A1 WO 2007009889 A1 WO2007009889 A1 WO 2007009889A1 EP 2006063966 W EP2006063966 W EP 2006063966W WO 2007009889 A1 WO2007009889 A1 WO 2007009889A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate insulator
gt
gate
field effect
lt
Prior art date
Application number
PCT/EP2006/063966
Other languages
German (de)
French (fr)
Inventor
Christoph Brabec
Christoph Waldauf
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102005034415 priority Critical
Priority to DE102005034415.1 priority
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2007009889A1 publication Critical patent/WO2007009889A1/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
    • H01L51/052Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0021Formation of conductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0096Substrates
    • H01L51/0097Substrates flexible substrates

Abstract

The invention relates to the realm of organic field effect transistors, more particularly an organic field effect transistor. A material that can be photochemically cured and/or structured is selected as a gate insulator material for the gate insulator layer. This makes it possible to obtain a gate insulator layer having an improved quality as well as create a simpler method for producing the transistor.

Description

description

Improved materials for insulators in organic field effect transistors

The application relates to the field of organic field effect transistors.

These organic field effect transistors, a GR sentliches criterion lies in the selection of the gate insulator. At this gate insulators are made, inter alia, the following requirements:

high layer quality - Use in layers of small thickness

Layer structure of layers of a high dielectric constant resistance to solvents

Particularly high demands on the gate insulator material at a bottom gate field-effect transistors. For these base metals are usually in the contacting used, but these are usually so sensitive to oxidation and unstable when in contact with air and / or water, so that the usual gate insulator materials can not be used to a bottom gate field-effect transistor of acceptable quality to reach.

thus, it has as its object a gate insulator material to provide that better met than known materials, and in particular a simpler production of organic field-effect Transistore, in particular from bottom gate field-effect transistors allows the above requirements.

Such a gate insulator material is provided by a material according to claim 1 of the present invention. Accordingly, an inventive gate insulator material for an organic field effect transistor is characterized in that the gate insulator material is photochemically curable and / or structured.

It has been found, surprisingly, that such a gate insulator material meets in organic field effect transistors with the above requirements in an excellent manner. By using such a gate insulator material to gate insulator layers can be built up, in particular,

a high dielectric constant and / or a small thickness and / or good processability

respectively. An advantage of the present invention is that the gate insulator layer can be easily manufactured by applying the same gate Isolatormatierials, for example by printing, rotary spinning, spraying or processes for applying liquid materials and subsequent curing by means of a photoreaction.

According to a preferred embodiment of the invention, the gate insulating material contains the following components:

-> 20 to <60 wt .-% γ-butyrolactone

> 1 to <5 wt .-% of propylene carbonate> 35 to <75 wt .-% epoxy resin

> 1 to <5 wt .-% of a photoinitiator, preferably in the form of a triarylsulfonium salt

Such a mixture has proven to be particularly advantageous gate insulator material.

Suitable photoinitiators are all from the prior art materials used principally in question. Be particularly suitable but triarylsulfonium have proven. This case, both as unsubstituted substituted, preferably halo- or alkyl-substituted Trialkylsulfo- niumsalze be used. A preferred counter ion is hexafluoroantimonate.

According to a preferred embodiment, the solubility ness of the gate insulator material in wt .-% in water is> 20 to <65%. Such high solubility is preferred in order to achieve a better processability. the solubility of the gate insulator material in wt .-% in water> 25 to <60% is preferred, more preferably> 30 to <50%.

before processing - - According to a preferred embodiment, the specific gravity of the gate insulator material is in g / ml ≥l .1 to .3 ≤L. Such a specific gravity has been found to be particularly suitable to produce gate insulating films with the desired properties. before processing - - in g / mL> 1.15 to <1.25, more preferably> 1.20 to <1.23, the specific gravity of the gate insulator material is preferred.

before processing - - According to a preferred embodiment, the volatile components of the gate insulator material amount in wt .-%> 20 to <65%. To obtain a gate insulator layer with the desired thickness and / or dielectric constant, it has been found preferable to keep the volatile components within these limits. before processing - - Preferably, the volatile components of the gate insulator material amount in wt .-%> 25 to ≤40%, more preferably> 30 to <35%.

According to a preferred embodiment, the volatile organic components of the gate insulator material be - before processing in g / L> 300 to <700th It has turned out to be positive, to keep the volatile organic components within these limits to layer with good film formation properties to achieve a gate insulator. Preferably, the volatile organic components of the gate insulator material be - before processing in g / L> 350 to <500th The invention further relates to an organic field effect transistor comprising a gate insulator layer, which contains as an essential component a as already beschriebe- nes gate insulator material or is built up from this. With the term "essential component" is meant that the gate insulator layer was prepared to> 90%, preferably> 95%, and most preferably consists of> 98% to <100% of the gate insulator material or out.

According to a preferred embodiment of the invention, the dielectric constant of the gate insulator layer> 2 to ≤IO is. Such a dielectric constant has the advantage that an effective control of the field effect transistor is also possible in a small box.

According to a preferred embodiment of the invention, the thickness of the gate insulator layer is between> 0.2 and <10 microns. Such thin layers have that much more compact and smaller transistors can be built up the advantage. Preferably, the thickness of the gate insulator layer between> 0.3 and ≤ 5 microns, even more preferably> 0.4 and <2 microns.

According to a preferred embodiment of the invention the organic field effect transistor is a bottom gate organic field effect transistor. It has been found that the gate insulating material of the invention is particularly advantageous for bottom gate organic field effect transistors.

The processing from the solution, followed by cross-linking and the associated insolubility and high thermal resistance enables the processing of a wide range of soluble and insoluble, organic and inorganic semiconductors on this layer, which allows the use of the same basic structure even with a change of the active material. Also in the preparation of further electrical form, the high resistance of the gate insulator gives maximum freedom. The invention also relates to a method for the construction of an organic field-effect transistor as described above, comprising the steps of: - applying a gate electrode on a substrate

Depositing a gate insulator material according to any one of claims 1 to 6 to the substrate and / or the gate electrode

Curing of the gate insulator material action by a photoreduction

Etching out a portion of the gate insulator material through a photochemical reaction, in order to provide access to the gate electrode

This method allows a simpler and more precise construction of field effect transistors than in methods according to the prior art. Characterized in that the gate insulator material is photochemically curable and / or be structured, a gate insulator layer can be easily constructed to advertising by the gate insulator material is applied and then cured by means of a photoreaction. Subsequently, an access to the gate electrode, the gate electrode by means of a structuring Photostruk-.

The aforementioned and the claimed and described in the exemplary embodiments according to the invention components to be used are not particularly exceptional conditions, so that can fully applicable in the field of use well- known selection criteria in their size, shape, material selection and technical design.

Further details, features and advantages of the object of the invention emerge from the subclaims and from the following description of the accompanying drawings, in which - by way of example - an embodiment of a field effect transistor according to the invention are shown. In the drawings: Fig.l is a perspective - very schematically - of an organic field effect transistor in bottom-gate structure according to an embodiment of the present invention; and 2 is a - very schematic - fragmentary

Sectional view of the transistor of Fig. 1 taken approximately along the line II of Fig. 1.

Fig. 1 shows an organic field effect transistor 1 in bottom-gate structure according to an embodiment of the present invention, Fig. 2 shows the same transistor in a sectional view. It should be noted that most of the transistor structures are in themselves prior art; However, all can be used in the field of organic field effect transistors known structures and materials for the present invention.

The transistor 1 is comprised of a substrate 50 on which the other structures are applied. The substrate 50 con- sists of glass or a suitable film, such as PET. Further, the transistor has a gate electrode 40, which may consist of gold or a suitable oxide such as ITO (indium tin composite oxide). The gate electrode 40 is surrounded by the inventive gate insulator layer 30, which is constructed as described above. In the gate insulator layer 30, an access 70 to the gate electrode 40 is provided, which is preferably created by etching the insulator material.

In Fig. 1, the gate electrode 40 is located for a better understanding of the transistor, although it is in fact below the insulator material 30. The exact ratios are more apparent from Fig. 2. However, the two figures are purely schematic and the proportions between the individual structures are in fact each by

Application sometimes dramatically different from the illustrations in FIGS. On the gate insulator layer 30, a semiconductor layer is 10. This is preferably made of an organic material which has been applied by spin coating. This semiconductor layer 10 is contacted by two electrodes, the drain electrode 20 and the source electrode 60th

The gate electrode 40 acts as the base of the transistor 1. If a field is applied to the gate electrode, the HaIb- act conductor layer 10, the gate insulator layer 30 and the gate electrode 40 as a kind of capacitor connected between a current flow drain 20 and source 60 causes whereby the transistor 1 can be controlled.

Due to this control, it is advantageous if the gate insulator layer on the one hand is as thin as possible and on the other has a particularly high dielectric constant. It has been found that a thickness of> 0.2 to <10 microns and a dielectric constant of> 2 to ≤IO are particularly advantageous.

Claims

claims
1. gate insulator material for an organic field effect transistor, characterized in that the gate insulator material is photochemically curable and / or structured.
2. gate insulating material according to claim 1, comprising: a)> 20 to <60 wt .-% γ-butyrolactone b)> 1 to <5 wt .-% of propylene carbonate c)> 35 to <75 wt .-% epoxy resin d )> 1 to <5 wt .-% of a photoinitiator, preferably in the form of a triarylsulfonium salt.
3. gate insulating material according to claim 1 or 2, wherein the solubility in wt .-% in water is> 20 to <65%
4. gate insulator material according to any one of claims 1 to 3, wherein the specific density in g / ml is up ≥l .1 .3 ≤L
5. gate insulator material according to any one of claims 1 to 4, wherein the volatile components of the gate insulator material - be in wt .-%> 20 to <65% - before processing
6. gate insulator material according to any one of claims 1 to 5, wherein the volatile organic components of the gate insulator material - before processing in g / L to be> 300 to ≤700.
7. An organic field effect transistor comprising a gate insulator layer (30), which contains as an essential component a gate insulating material according to one or more of claims 1 to 6 or constructed therefrom.
8. An organic field effect transistor according to claim 7, wherein the gate insulator layer (30) has a dielectric constant of> 2 to <10 degrees.
9. An organic field effect transistor according to claim 7 or 8, wherein the thickness of the gate insulator layer (30) is between> 0.2 and <10 microns.
10. An organic field effect transistor according to any one of claims 7 to 9, wherein the organic field effect transistor is a bottom gate organic field effect transistor.
11. A method for construction of an organic Feldeffekttransis- tors according to any one of claims 7 to 10, comprising the steps of:
- applying a gate electrode (40) on a substrate
(50)
- depositing a gate insulator material according to any one of claims 1 to 6 to the substrate (50) and / or the gate electrode (40)
- curing of the gate insulator material through a photochemical reaction to form a gate insulator layer (30)
- etching a portion of the gate insulator layer (30) by a photoreaction, in order to create an access (70) to the gate electrode (40).
PCT/EP2006/063966 2005-07-22 2006-07-06 Improved materials for insulators in organic field effect transistors WO2007009889A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102005034415 2005-07-22
DE102005034415.1 2005-07-22

Publications (1)

Publication Number Publication Date
WO2007009889A1 true WO2007009889A1 (en) 2007-01-25

Family

ID=36763244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/063966 WO2007009889A1 (en) 2005-07-22 2006-07-06 Improved materials for insulators in organic field effect transistors

Country Status (1)

Country Link
WO (1) WO2007009889A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761817B2 (en) 2015-03-13 2017-09-12 Corning Incorporated Photo-patternable gate dielectrics for OFET

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0889361A1 (en) * 1997-06-30 1999-01-07 Siemens Aktiengesellschaft Initiators for cationic polymerization
WO2001033649A1 (en) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Method of producing vertical interconnects between thin film microelectronic devices and products comprising such vertical interconnects
DE10340608A1 (en) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymer formulation and method for producing a dielectric layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0889361A1 (en) * 1997-06-30 1999-01-07 Siemens Aktiengesellschaft Initiators for cationic polymerization
WO2001033649A1 (en) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Method of producing vertical interconnects between thin film microelectronic devices and products comprising such vertical interconnects
DE10340608A1 (en) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymer formulation and method for producing a dielectric layer

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FIX W ET AL: "Fast polymer integrated circuits" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, Bd. 81, Nr. 9, 26. August 2002 (2002-08-26), Seiten 1735-1737, XP012033403 ISSN: 0003-6951 *
GONG GU ET AL: "An organic thin-film transistor with photolithographically patterned top contacts and active layer" DEVICE RESEARCH CONFERENCE, 2004. 62ND DRC. CONFERENCE DIGEST ÄLATE NEWS PAPERS VOLUME INCLUDEDÜ NOTRE DAME, IN, USA JUNE 21-23, 2004, PISCATAWAY, NJ, USA,IEEE, 21. Juni 2004 (2004-06-21), Seiten 83-84, XP010748144 ISBN: 0-7803-8284-6 *
KLAUK H ET AL: "Flexible organic complementary circuits" IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE USA, Bd. 52, Nr. 4, April 2005 (2005-04), Seiten 618-622, XP008067678 ISSN: 0018-9383 *
LIANG YAN ET AL: "Fabrication of pentacene thin-film transistors with patterned polyimide photoresist as gate dielectrics and research of their degradation" CHINESE PHYSICS LETTERS CHINESE PHYS. SOC CHINA, Bd. 21, Nr. 11, November 2004 (2004-11), Seiten 2278-2280, XP002394573 ISSN: 0256-307X *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761817B2 (en) 2015-03-13 2017-09-12 Corning Incorporated Photo-patternable gate dielectrics for OFET
US10186673B2 (en) 2015-03-13 2019-01-22 Corning Incorporated Photo-patternable gate dielectrics for OFET

Similar Documents

Publication Publication Date Title
US6891237B1 (en) Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
JP4509228B2 (en) Field effect transistors and a manufacturing method thereof made of an organic material
US3801880A (en) Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same
US7646013B2 (en) Transistor with large ion-complexes in electrolyte layer
CN100530695C (en) Method of fabrication of printed transistors
EP1580811A2 (en) Passivation films for organic thin film transistors
Yoon et al. Fully transparent non‐volatile memory thin‐film transistors using an organic ferroelectric and oxide semiconductor below 200 C
CN1324656C (en) Method for forming metal single-layer film, method for forming wiring, and method for producing field effect transistors
JP4966537B2 (en) Thin film transistor
TWI559553B (en) Oxide semiconductor thin film transistor, and a manufacturing method therefor which comprises an organic electroluminescent device of
EP1093663A2 (en) Integrated inorganic/organic complementary thin-film transistor circuit
KR20090071358A (en) Oxide semiconductor device and the method of manufacturing
JP2010072654A (en) Display device
JPH09199732A (en) Product comprising transistors
Lee et al. Large‐Scale Precise Printing of Ultrathin Sol–Gel Oxide Dielectrics for Directly Patterned Solution‐Processed Metal Oxide Transistor Arrays
JP2007013138A (en) Method for manufacturing organic thin film transistor and organic thin film transistor manufactured by the method
US20070194386A1 (en) Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
US7566899B2 (en) Organic thin-film transistor backplane with multi-layer contact structures and data lines
CN1708864A (en) Field effect transistor and method for production thereof
JP4124787B2 (en) Field effect transistor and a display device using the same
KR20060049062A (en) Field-effect transistor
US7700403B2 (en) Manufacturing method of semiconductor device
JP2010532559A (en) Self-aligned organic thin film transistor and a manufacturing method thereof
JP2006191044A (en) Vertical organic thin-film transistor, vertical organic light-emitting transistor, and display element
EP1393387A1 (en) Organic field effect transistor, method for production and use thereof in the assembly of integrated circuits

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase in:

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct app. not ent. europ. phase

Ref document number: 06764101

Country of ref document: EP

Kind code of ref document: A1