WO2006134053A3 - Optoelectronic component comprising a semiconductor optical guide with an active core with enhanced optical index - Google Patents

Optoelectronic component comprising a semiconductor optical guide with an active core with enhanced optical index Download PDF

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Publication number
WO2006134053A3
WO2006134053A3 PCT/EP2006/062979 EP2006062979W WO2006134053A3 WO 2006134053 A3 WO2006134053 A3 WO 2006134053A3 EP 2006062979 W EP2006062979 W EP 2006062979W WO 2006134053 A3 WO2006134053 A3 WO 2006134053A3
Authority
WO
WIPO (PCT)
Prior art keywords
active core
index
optoelectronic component
semiconductor
optical
Prior art date
Application number
PCT/EP2006/062979
Other languages
French (fr)
Other versions
WO2006134053A2 (en
Inventor
Alexandre Garreau
Marie-Antoinette Poisson
Original Assignee
Thales Sa
Alexandre Garreau
Marie-Antoinette Poisson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales Sa, Alexandre Garreau, Marie-Antoinette Poisson filed Critical Thales Sa
Publication of WO2006134053A2 publication Critical patent/WO2006134053A2/en
Publication of WO2006134053A3 publication Critical patent/WO2006134053A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
    • H01S5/3419—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention concerns an optoelectronic component comprising a semiconductor optical guide with an active core including a structure with quantum wells (MPQ, MPQ1, MPQ2) based on AlxlnyGazN, with x, y, z molar fractions ranging between 0 and 1, inserted between ohmic contact layers, at the surface of a substrate (S). The invention is characterized in that the active core further includes at least one layer of high optical index (CF, CF1, CF2) made of a first semiconductor material based on indium nitride, said index being higher than that of said structure and in that it comprises optical confinement layers (CO1, CO2, CO) made of a second semiconductor material with high electronic mobility such as n-doped GaN or n-doped AlGaN, said optical confinement layers constituting the ohmic contact layers. The invention is applicable to a modulator operating at several hundreds GHz.
PCT/EP2006/062979 2005-06-17 2006-06-07 Optoelectronic component comprising a semiconductor optical guide with an active core with enhanced optical index WO2006134053A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR05/06177 2005-06-17
FR0506177A FR2887373B1 (en) 2005-06-17 2005-06-17 OPTOELECTRONIC COMPONENT COMPRISING A SEMICONDUCTOR OPTICAL GUIDE WITH AN ENHANCED OPTICAL INDEX ACTIVE HEART

Publications (2)

Publication Number Publication Date
WO2006134053A2 WO2006134053A2 (en) 2006-12-21
WO2006134053A3 true WO2006134053A3 (en) 2007-08-09

Family

ID=35911189

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/062979 WO2006134053A2 (en) 2005-06-17 2006-06-07 Optoelectronic component comprising a semiconductor optical guide with an active core with enhanced optical index

Country Status (2)

Country Link
FR (1) FR2887373B1 (en)
WO (1) WO2006134053A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1400835A2 (en) * 2002-09-17 2004-03-24 Nippon Telegraph and Telephone Corporation Semiconductor optical modulator and laser with such optical modulator
US20040257632A1 (en) * 2002-01-07 2004-12-23 Matsushita Electric Industrial Co., Ltd. Process of fabricating semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040257632A1 (en) * 2002-01-07 2004-12-23 Matsushita Electric Industrial Co., Ltd. Process of fabricating semiconductor light emitting device
EP1400835A2 (en) * 2002-09-17 2004-03-24 Nippon Telegraph and Telephone Corporation Semiconductor optical modulator and laser with such optical modulator

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DECUIR E A JR ET AL: "Intersubband transitions in GaN/AlxGa1-xN multi quantum wells", PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS. SYMPOSIUM (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOL.829) MATERIALS RESEARCH SOCIETY WARRENDALE, PA, USA, vol. 829, 29 November 2004 (2004-11-29) - 3 December 2004 (2004-12-03), pages B2.29.1 - B2.29.7, XP002418572, ISBN: 1-55899-777-6 *
KOIKE M ET AL: "Room temperature CW operation of GaN-based blue laser diodes by GaInN/GaN optical guiding layers", GAN AND RELATED ALLOYS - 1999. SYMPOSIUM (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOL.595) MATER. RES. SOC WARRENDALE, PA, USA, 28 November 1999 (1999-11-28) - 3 December 1999 (1999-12-03), pages W.1.2.1 - 7, XP002371074, ISBN: 1-55899-503-X *
SUZUKI N: "Numerical simulation of GaN-based intersubband transition photonic devices", NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2004. NUSOD '04. PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON SANTA BARBARA, CA, USA 24-26 AUG. 2004, PISCATAWAY, NJ, USA,IEEE, 24 August 2004 (2004-08-24), pages 80 - 83, XP010732788, ISBN: 0-7803-8530-6 *

Also Published As

Publication number Publication date
FR2887373B1 (en) 2007-08-10
FR2887373A1 (en) 2006-12-22
WO2006134053A2 (en) 2006-12-21

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