WO2006133132A3 - Combinations of plasma production devices and method and rf driver circuits with adjustable duty cycle - Google Patents

Combinations of plasma production devices and method and rf driver circuits with adjustable duty cycle Download PDF

Info

Publication number
WO2006133132A3
WO2006133132A3 PCT/US2006/021821 US2006021821W WO2006133132A3 WO 2006133132 A3 WO2006133132 A3 WO 2006133132A3 US 2006021821 W US2006021821 W US 2006021821W WO 2006133132 A3 WO2006133132 A3 WO 2006133132A3
Authority
WO
WIPO (PCT)
Prior art keywords
driver circuits
disclosed
combinations
plasma
duty cycle
Prior art date
Application number
PCT/US2006/021821
Other languages
French (fr)
Other versions
WO2006133132A2 (en
Inventor
Patrick A Pribyl
Jerry Cohen
Original Assignee
Plasma Control Systems Llc
Patrick A Pribyl
Jerry Cohen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasma Control Systems Llc, Patrick A Pribyl, Jerry Cohen filed Critical Plasma Control Systems Llc
Publication of WO2006133132A2 publication Critical patent/WO2006133132A2/en
Publication of WO2006133132A3 publication Critical patent/WO2006133132A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Abstract

A method and apparatus capable of combining one or more RF driver circuit and an orthogonal antenna assembly/configuration with conventional RF generators or other similar units are disclosed as part of a method and system for generating high density plasma for different power and coverage levels. The disclosed low-output impedance RF driver circuits eliminate or greatly reduce the need for a matching circuit for interfacing with the inherent impedance variations associated with plasmas. Also disclosed is the choice for capacitance or an inductance value to provide tuning for the RF plasma source. There is also provided a method for rapidly switching the plasma between two or more power levels at a frequencies of about tens of Hz to as high as hundreds of KHz.
PCT/US2006/021821 2005-06-03 2006-06-05 Combinations of plasma production devices and method and rf driver circuits with adjustable duty cycle WO2006133132A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US68756005P 2005-06-03 2005-06-03
US60/687,560 2005-06-03
US71577905P 2005-09-08 2005-09-08
US60/715,779 2005-09-08
US71593305P 2005-09-09 2005-09-09
US60/715,933 2005-09-09

Publications (2)

Publication Number Publication Date
WO2006133132A2 WO2006133132A2 (en) 2006-12-14
WO2006133132A3 true WO2006133132A3 (en) 2007-03-15

Family

ID=37499024

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/021821 WO2006133132A2 (en) 2005-06-03 2006-06-05 Combinations of plasma production devices and method and rf driver circuits with adjustable duty cycle

Country Status (1)

Country Link
WO (1) WO2006133132A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
CN114156154B (en) * 2021-11-15 2024-04-05 华科电子股份有限公司 Frequency adjusting method and system applied to radio frequency power supply of etching machine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
US20030146803A1 (en) * 2002-02-01 2003-08-07 Pickard Daniel S. Matching network for RF plasma source
US6677828B1 (en) * 2000-08-17 2004-01-13 Eni Technology, Inc. Method of hot switching a plasma tuner
US20040026231A1 (en) * 2001-10-09 2004-02-12 Pribyl Patrick A. Plasma production device and method and RF driver circuit with adjustable duty cycle
US6888313B2 (en) * 2003-07-16 2005-05-03 Advanced Energy Industries, Inc. Impedance matching network with termination of secondary RF frequencies

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
US6677828B1 (en) * 2000-08-17 2004-01-13 Eni Technology, Inc. Method of hot switching a plasma tuner
US20040026231A1 (en) * 2001-10-09 2004-02-12 Pribyl Patrick A. Plasma production device and method and RF driver circuit with adjustable duty cycle
US20030146803A1 (en) * 2002-02-01 2003-08-07 Pickard Daniel S. Matching network for RF plasma source
US6888313B2 (en) * 2003-07-16 2005-05-03 Advanced Energy Industries, Inc. Impedance matching network with termination of secondary RF frequencies

Also Published As

Publication number Publication date
WO2006133132A2 (en) 2006-12-14

Similar Documents

Publication Publication Date Title
WO2004095626A3 (en) Plasma production device and method and rf driver circuit with adjustable duty cycle
WO2004029604A3 (en) Waveform generator electronics based on tuned lc circuits
EP3001551B1 (en) Non-contact power supply device
TW200504815A (en) Apparatus using hybrid coupled plasma
MX2018003945A (en) Circuits for supplying isolated direct current (dc) voltage to surgical instruments.
WO2009143544A3 (en) Vlf test generator
WO2014151895A3 (en) Method and apparatus for generating highly repetitive pulsed plasmas
WO2009155352A3 (en) Matching circuit for a complex radio frequency (rf) waveform
ATE206568T1 (en) METHOD AND DEVICE FOR ADAPTING A VARIABLE LOAD IMPEDANCE TO AN RF POWER GENERATOR IMPEDANCE
TW200612488A (en) Plasma processing apparatus, method thereof, and computer readable memory medium
WO2010144555A3 (en) Adjusting current ratios in inductively coupled plasma processing systems
TW200636853A (en) An inductively-coupled plasma etch apparatus and a feedback control method thereof
TW200721915A (en) Electrostatic chuck for vacuum processing apparatus, vacuum processing apparatus having the same, and method for manufacturing the same
PL1701376T3 (en) Vacuum plasma generator
WO2010117970A3 (en) Multifrequency capacitively coupled plasma etch chamber
WO2020141806A3 (en) Plasma generating apparatus and method for operating same
AU2003234479A1 (en) Plasma-assisted formation of carbon structures
TW200632980A (en) Plasma generation apparatus
TW200731504A (en) Semiconductor device and circuit having multiple voltage controlled capacitors
NO20054626L (en) Method for high frequency tuning of an electrical device and printed circuit board suitable for the same
WO2000008898A3 (en) High frequency heating apparatus
WO2012159620A3 (en) Method for impedance matching the output impedance of a high-frequency power supply arrangement to the impedance of a plasma load, and high frequency power supply arrangement
WO2007044248B1 (en) Low-voltage inductively coupled source for plasma processing
TW200703180A (en) Driving circuit and display device
ATE502348T1 (en) RFID READER WITH ANTENNA AND OPERATING METHOD THEREFOR

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06760696

Country of ref document: EP

Kind code of ref document: A2