WO2006124075A3 - System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway - Google Patents

System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway Download PDF

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Publication number
WO2006124075A3
WO2006124075A3 PCT/US2005/047656 US2005047656W WO2006124075A3 WO 2006124075 A3 WO2006124075 A3 WO 2006124075A3 US 2005047656 W US2005047656 W US 2005047656W WO 2006124075 A3 WO2006124075 A3 WO 2006124075A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
passageway
sidewall
electrostatic field
away
Prior art date
Application number
PCT/US2005/047656
Other languages
French (fr)
Other versions
WO2006124075A2 (en
Inventor
Alfred Halling
Original Assignee
Axcelis Tech Inc
Alfred Halling
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc, Alfred Halling filed Critical Axcelis Tech Inc
Priority to JP2008512262A priority Critical patent/JP2008541396A/en
Priority to PCT/US2005/047656 priority patent/WO2006124075A2/en
Publication of WO2006124075A2 publication Critical patent/WO2006124075A2/en
Publication of WO2006124075A3 publication Critical patent/WO2006124075A3/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Abstract

Ion implantation systems and beam confinement apparatus therefor are disclosed for inhibiting electron loss to a beam passageway sidewall, comprising a negatively biased conductive member to generate an electrostatic field repelling electrons away from the sidewall and a grounded conductive member between the sidewall and the ion beam to localize the electrostatic field to regions of the passageway away from the ion beam to avoid or mitigate adverse impact to the ion beam. Methods are disclosed for inhibiting electron loss to a sidewall in an ion beam transport passageway, comprising providing an electrostatic field in the passageway to repel electrons away from the sidewall, and localizing the electrostatic field to regions of the passageway away from an ion beam so as to repel electrons away from the sidewall without significant adverse impact to the ion beam.
PCT/US2005/047656 2005-05-16 2005-05-16 System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway WO2006124075A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008512262A JP2008541396A (en) 2005-05-16 2005-05-16 System and method for ion beam retention using a localized electrostatic field in the ion beam path
PCT/US2005/047656 WO2006124075A2 (en) 2005-05-16 2005-05-16 System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/047656 WO2006124075A2 (en) 2005-05-16 2005-05-16 System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway

Publications (2)

Publication Number Publication Date
WO2006124075A2 WO2006124075A2 (en) 2006-11-23
WO2006124075A3 true WO2006124075A3 (en) 2007-04-19

Family

ID=37431711

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047656 WO2006124075A2 (en) 2005-05-16 2005-05-16 System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway

Country Status (2)

Country Link
JP (1) JP2008541396A (en)
WO (1) WO2006124075A2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08106877A (en) * 1994-10-05 1996-04-23 Nissin Electric Co Ltd Ion implanting device
US6329650B1 (en) * 1997-12-01 2001-12-11 Ebara Corporation Space charge neutralization of an ion beam
WO2002019378A2 (en) * 2000-09-01 2002-03-07 Axcelis Technologies, Inc. System and method for removing particles entrained in an ion beam
JP2003257356A (en) * 2002-02-27 2003-09-12 Nissin Electric Co Ltd Ion beam irradiation device
US20040084635A1 (en) * 2002-11-05 2004-05-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
WO2004114358A2 (en) * 2003-06-20 2004-12-29 Axcelis Technologies Inc. Thin magnetron structures for plasma generation in ion implantation systems

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08106877A (en) * 1994-10-05 1996-04-23 Nissin Electric Co Ltd Ion implanting device
US6329650B1 (en) * 1997-12-01 2001-12-11 Ebara Corporation Space charge neutralization of an ion beam
WO2002019378A2 (en) * 2000-09-01 2002-03-07 Axcelis Technologies, Inc. System and method for removing particles entrained in an ion beam
JP2003257356A (en) * 2002-02-27 2003-09-12 Nissin Electric Co Ltd Ion beam irradiation device
US20040084635A1 (en) * 2002-11-05 2004-05-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
WO2004114358A2 (en) * 2003-06-20 2004-12-29 Axcelis Technologies Inc. Thin magnetron structures for plasma generation in ion implantation systems

Also Published As

Publication number Publication date
JP2008541396A (en) 2008-11-20
WO2006124075A2 (en) 2006-11-23

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