WO2006122429A1 - Procede de micro-usinage laser direct de guides d'ondes optiques et guides d'ondes optiques ainsi produits - Google Patents

Procede de micro-usinage laser direct de guides d'ondes optiques et guides d'ondes optiques ainsi produits Download PDF

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Publication number
WO2006122429A1
WO2006122429A1 PCT/CA2006/000830 CA2006000830W WO2006122429A1 WO 2006122429 A1 WO2006122429 A1 WO 2006122429A1 CA 2006000830 W CA2006000830 W CA 2006000830W WO 2006122429 A1 WO2006122429 A1 WO 2006122429A1
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WIPO (PCT)
Prior art keywords
layer
optical waveguide
waveguide
trenches
fabricating
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PCT/CA2006/000830
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English (en)
Inventor
Raman Kashyap
Vincent Treanton
Lutfu Celebi Ozcan
Original Assignee
Corporation De L'École Polytechnique De Montréal
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Publication of WO2006122429A1 publication Critical patent/WO2006122429A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/1215—Splitter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12169—Annealing
    • G02B2006/12171—Annealing using a laser beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/365—Non-linear optics in an optical waveguide structure

Definitions

  • the present invention generally relates to optical waveguides. More specifically, the present invention is concerned with a process for direct laser micromachining of optical waveguides, and the optical waveguide produced by this process.
  • optical is intended to designate visible and invisible electromagnetic radiations capable of being propagated through a waveguide as described in the present disclosure.
  • optical waveguide is intended to designate a waveguide capable of propagating visible and invisible electromagnetic radiations.
  • this method modifies the properties of the material in the exposed core region, the waveguide formation process is slow due to the writing speed of the order of 100 ⁇ m/sec [2], and the method is expected to cause damage in nonlinear materials.
  • traditional ion exchange waveguides may not be suitable for poled glass optical waveguide devices.
  • a process for fabricating a ridge waveguide comprising: providing an optical waveguide comprising superposed core layer and cladding layer, the cladding layer having an outer surface; and modifying two laterally adjacent strips of the optical waveguide from the outer surface of the cladding layer to form in the optical waveguide a ridge waveguide between the two modified strips, the modified strips extending at least throughout the thickness of the cladding layer and at most throughout the thickness of the cladding layer and a part of the thickness of the core layer.
  • an optical waveguide comprising: superposed core layer and cladding layer, the cladding layer having an outer surface; and two laterally adjacent strips modified from the outer surface of the cladding layer to form a ridge waveguide between the two modified strips, the modified strips extending at least throughout the thickness of the cladding layer and at most throughout the thickness of the cladding layer and a part of the thickness of the core layer.
  • a third aspect of the present invention is concerned with a process for fabricating a ridge waveguide, comprising: providing an optical waveguide comprising superposed core layer and cladding layer, the cladding layer comprising an outer surface; micromachining two laterally adjacent trenches in the optical waveguide from the outer surface of the cladding layer to form in the optical waveguide an optical ridge waveguide between the two trenches, the trenches extending at least throughout the thickness of the cladding layer, and the trenches and the optical ridge waveguide presenting a Gaussian profile.
  • a fourth aspect of the present invention relates to an optical waveguide, comprising: superposed core layer and cladding layer, the cladding layer comprising an outer surface; and two laterally adjacent trenches in the outer surface of the cladding layer to form a ridge waveguide between the two trenches, the trenches extending at least throughout the thickness of the cladding layer, and the trenches and the ridge waveguide presenting a Gaussian profile.
  • a process for fabricating a ridge waveguide comprising: providing an optical waveguide comprising a core layer with an outer surface; and micromachining two laterally adjacent trenches in the optical waveguide from the outer surface of the core layer to form in the optical waveguide an optical ridge waveguide between the two trenches, the trenches extending at least through a portion of the thickness of the core layer, and the trenches and the optical ridge waveguide presenting a Gaussian profile.
  • an optical waveguide comprising: a core layer with an outer surface; and two laterally adjacent trenches in the outer surface of the core layer to form a ridge waveguide between the two trenches, the trenches extending through at least a portion of the thickness of the core layer, and the trenches and the ridge waveguide presenting a Gaussian profile.
  • Figure 1a is a schematic cross sectional view of a planar optical waveguide comprising a buffer layer, a core layer and a cladding layer superposed on a silicon substrate, and comprising two longitudinal trenches digging through the cladding layer and slightly into the core layer to define an optical ridge waveguide;
  • Figure 1b is a schematic plan view of a system for micromachining an optical waveguide
  • Figure 1c is a schematic cross sectional view of a planar optical waveguide comprising a buffer layer, a core layer and a cladding layer superposed on a silicon substrate, and comprising two longitudinal trenches digging through the cladding and core layers and slightly into the buffer layer to define an optical ridge waveguide;
  • Figure 2 is a graph comparing the loss as a function of propagation length in a Gaussian-profile waveguide with a cladding layer (solid line), without a cladding layer and with a SMF butt-launch (dashed line) and without a cladding layer and with a tapered fiber launch (dotted line);
  • Figure 3 is a graph showing a cross-section of an optical waveguide showing a laser-ablated portion.
  • Figure 4a is a graph showing the profile of one side of a trench etched in fused silica without (solid lines) and with (dashed lines) an improved ablation process according to one non-restrictive illustrative embodiment of the present invention
  • Figure 4b is a graph showing the profile of one side of a trench etched in LiNbO 3 without (solid lines) and with (dashed lines) an improved ablation process according to said one non-restrictive illustrative embodiment of the present invention
  • Figure 5a is a photograph of an optical ridge waveguide where the depth of the trenches is slightly greater than the thickness of the core layer and penetrates a few microns into the buffer layer, where light is confined horizontally and vertically in the ridge core layer;
  • Figure 5b is a photograph of an optical ridge waveguide where the depth of the trenches is slightly greater than the thickness of the core layer and penetrates a few microns into the buffer layer, where light is confined only horizontally in the core layer outside the ridge waveguide;
  • Figure 6 is a graph showing the spectrum of propagation loss as a function of wavelength in the optical ridge waveguide of Figures 5a and [0022]
  • Figure 7 is a graph of etching depth in silica thin films by a
  • CO 2 laser as a function of focused incident power level (crosses) with a logarithmic fit (solid curve);
  • Figure 8 is a photograph of a 2,5 cm long smooth Gaussian- profile ridge waveguide written in 3 seconds, the ridge being 6 ⁇ m high and having a full width at half maximum (FWHM) of 7.2 ⁇ m, showing light exiting from a rough-cut, unprocessed end;
  • Figure 9 is a graph showing a spectrum obtained from the waveguide of Figure 8 using light from a 1530 nm broadband amplified spontaneous emission source.
  • Figure 10 is a top plan view of a tapered MMI Y-splitter.
  • a process for direct laser micromachining optical waveguides creates in the optical waveguides substantially parallel, longitudinal trenches of which the depth is controlled.
  • a planar optical waveguide 7 to be direct laser micromachined is produced on a silicon substrate layer 5 and comprises, superposed on the silicon substrate layer 5, a buffer layer 1 , a core layer 2 and a cladding layer 3.
  • the core layer 2 has a refractive index ⁇ ⁇ re-
  • the buffer layer 1 has a refractive index ⁇ b uffer lower than the refractive index ⁇ ⁇ re
  • the cladding layer 3 has a refractive index ⁇ c ia dd ing lower than the refractive index ⁇ re-
  • a first mirror 10 for reflecting at an angle of 90° the laser beam 90 toward a shutter 12;
  • a shutter 12 for controlling transmission of the laser beam reflected on the mirror 10 toward the optical waveguide;
  • a wave plate 13 which is an optical element having two principal axes, slow and fast, that resolve the incident polarized laser beam from the shutter 12 into two mutually perpendicular polarized beams; the emerging laser beam recombines to form a particular single polarized laser beam;
  • a second mirror 11 for reflecting at an angle of 90° the laser beam from the laser polarizer 14 toward the meniscus lens 15; - a meniscus lens 15 to highly focus the laser beam from the mirror 11 and produce a highly focused laser beam 150 for application to the optical waveguide 7 to be direct laser micromachined;
  • the linearly polarized, highly focused laser beam 150 is locally applied to the top surface of the cladding layer 8 of the optical waveguide 7.
  • the translation stage 16 is then operated to move the optical waveguide 7 so as to allow the laser beam 150 to directly write the desired pattern through the cladding layer 3.
  • the shutter 12 controls transmission of the laser beam to thereby control the laser beam energy locally applied to the optical waveguide 7.
  • a strip-loaded ridge optical waveguide 6 is then formed in the core layer 2 between the trenches 4.
  • the trenches 4 cause horizontal light confinement in the core layer 2 between these trenches 4; removal of the material of the cladding layer 3 for producing a trench will cause a reduction of the mean refractive index throughout the thickness of the three (3) buffer 1 , core 2 and cladding 3 layers in the area of the trench to thereby confine light horizontally within the ridge waveguide.
  • Vertical confinement of light is assured by the refractive index ⁇ ⁇ re of the core layer 2 which is larger than the respective refractive indexes ⁇ c iadding and ⁇ b u f f e r of both the cladding layer 3 and the buffer layer 1. Because it is difficult to ablate only into the cladding layer 3 until the core layer 2 is reached without touching it, the laser beam 150 can slightly or superficially dig into the thickness of the core layer 2 without changing the behavior of the modified optical waveguide.
  • the strips of the cladding layer corresponding to the trenches could be otherwise modified, for example doped to locally reduce their refractive index. In this case, production of trenches would no longer be required.
  • the two Gaussian-profile, generally parallel trenches 4 can be created through both the cladding layer 3 and the core layer 2.
  • the laser beam 150 can slightly dig into the thickness of the buffer layer 3 without changing the behavior of the modified optical waveguide.
  • a first advantage over photolithographic waveguide fabrication is that no pattern mask is required.
  • the translation stage 16, on which the optical waveguide 7 is disposed can be moved so as to allow the laser beam 150 to directly define the desired pattern through the cladding layer 3. This affords great flexibility to the process since only the trajectory of the translation stage 16 needs to be micro-metrically controlled in order to define a pattern therein. Also, modification of the optical waveguide 7 can be dynamically controlled in order to optimize optical performances.
  • a further advantage is that the fabrication (or modification) time of the optical waveguide 7 is shorter since no additional chemical or mechanical processing is required.
  • the writing speed is approximately 500 times faster than the speed of femtosecond or UV writing because of the high efficiency of the direct laser ablation step. This is expected to considerably reduce production time.
  • the laser equipment used in the production of optical waveguides 7 is inexpensive and requires low maintenance, there is a significant cost advantage which can be reflected in the costs of manufacture of planar optical waveguide devices.
  • the above described non-restrictive illustrative embodiment of the process according to the present invention can be applied to the optical waveguide 7 as illustrated in Figures 1a and 1c, comprising superposed buffer layer 1 , core layer 2 and cladding layer 3.
  • a process operation can added in order to create the buffer layer 1. This operation consists of lowering the refractive index of a sub-layer of the core layer 2 opposite the cladding layer 1 and leaving unchanged the physical properties of the remaining sub-layer of the core layer 2 adjacent to the cladding layer 3. Creating a lower refractive index area buried under the surface of the core layer 2 at a desired depth can be achieved, for example, with a laser beam applied laterally to the core layer 2.
  • the cladding layer 3 and eventually the core layer 2 of the optical waveguide 7 can be made of silica thin film insulating layers superposed on a silicon substrate 5; silicon substrate is one of the most widely used substrate in planar light-wave circuits.
  • a CO 2 laser radiation from laser 9 ( Figure 1 b) at a wavelength of 10.6 microns is strongly absorbed in silica, making this material a good choice for micromachining.
  • the absorption coefficient of silicon is very small at this wavelength, which in turn insures that the silicon substrate 5 will not be affected by the writing process.
  • the ridge waveguide obtained by the above described non-restrictive illustrative embodiment of the process according to the present invention has a Gaussian profile which is significantly different from the standard rectangular profile made by photolithographic techniques.
  • the losses are predicted to be as shown by curve c of Figure 2.
  • Curve c shows mismatch with the single mode fiber (SMF) launch, and stabilizes to a relatively constant value as a function of propagation length (0.5dB/cm).
  • SMF single mode fiber
  • the losses with a waveguide with Gaussian profile remain higher than those with a waveguide with rectangular profile.
  • the losses drop considerably to less than 0.1dB/cm.
  • Micromachining has been performed on several bulk materials such as silica glass, crystalline quartz, silicon and LiNbO 3 . Since these materials do not absorb laser radiation at the same wavelengths, lasers of different wavelengths were used. CO 2 laser remains a good candidate for micromachining these materials because of its high absorption at the wavelength of 10.6 microns. The absorption coefficient of silicon is very small at the latter wavelength, but becomes sufficient for laser ablation at a wavelength of 532 nm. A Q-switched frequency doubled Nd:YAG laser was therefore used to realize trenches in silicon.
  • the proposed additional operation consists of using a surface profiler such as the one commercialized under the name DEKTAKTM.
  • a surface profiler such as the one commercialized under the name DEKTAKTM.
  • bumps on both sides of the trench were completely removed leaving a flat surface.
  • the width and depth of those trenches are larger than without the additional surface profiling operation, although this is believed to be due to an un-optimized exposure to laser radiation.
  • the surface flatness is similar to what is achieved by femtosecond laser ablation [5].
  • the surface profiling operation presents the advantage of being 100 times faster than HF etching and of being performed potentially at lower cost.
  • Figure 4b shows results obtained with LiNbO 3 . More specifically, Figure 4B shows that the bumps have been reduced to sub-micron height.
  • Ridge waveguides have also been formed in crystalline quartz and silicon, with little or no apparent damage to the surface of the materials and with similar results in bump height reduction.
  • Waveguides in thin films The above-described non-restrictive illustrative embodiment of the process according to the present invention can also be applied to optical waveguides produced in thin films.
  • the thin film optical waveguide was composed of a two-layer silicon dioxide structure deposited on a silicon substrate.
  • the core layer was a 6 ⁇ m thick layer over an 8 ⁇ m buffer layer with an index difference of 2 x 10 "2 .
  • Ridge waveguides were patterned in the core layer with varying spacing between trenches. The depth of the trenches was slightly greater than the thickness of the core layer; the trenches penetrated a few microns into the buffer layer. Photographs of such a thin film optical waveguide are presented in Figures 5a and 5b.
  • the ridge waveguide of Figures 5a and 5b has a smooth
  • Propagation losses were measured using the cutback method: single-mode fibers at 1550 nm were butt-coupled using index matching oil. A chip bearing 25 single-mode optical waveguides having the same dimensions was cut by 5 mm and the output power measured four (4) times. From these 100 measurements, an average propagation loss of 0.1dB/cm was determined; this is verified by the test shown in Figure 2.
  • a cladding layer reduces propagation losses as a result of a better mode match with the input single- mode optical fiber.
  • Several straight optical ridge waveguides have been realized using the same conditions, which not only lead to identical physical profiles but also to similar propagation losses and output power levels. This technique therefore allows repeatable fabrication of optical ridge waveguides.
  • the waveguide of Figure 8 was investigated using light from a 1530 nm broadband amplified spontaneous emission source and an optical spectrum analyzer: the obtained spectrum is presented in Figure 9. It is believed that low loss is in part due to the fact that once the material is ablated, no material is left to transport heat to the adjacent walls thereby eliminating excessive thermal effects that could cause damage to the side wall.
  • a 2 dB insertion loss is predominantly due to low coupling efficiency as a result of the mode-mismatch between the single-mode butt-coupling fiber and the ridge waveguide and the lack of an over-clad which creates an asymmetrical waveguide mode shape.
  • end faces were unpolished.
  • cut-back measurements demonstrate a propagation loss of only 0.1 dB/cm.
  • Y-branch couplers were also produced. To fabricate such a complex device, a two-axis stage was used and software was developed to define the desired pattern. As a first trial, a Y- branch was produced with a 4 degree branch angle: this is illustrated in Figure 10 along with a near field image of the end faces when 633 nm light is injected into the single input port.
  • the Y-branch waveguides have not yet been optimized for insertion loss as the apex of the junction of the splitter could not be formed as desired, due to limitations in the control of the translation stage(s).
  • Sacrificial layer [0058] According to another non-restrictive illustrative aspect of the present invention, there is provided a technique to improve surface finish after ablation.
  • the proposed technique facilitates the use of lasers in micromachining.
  • the technique includes the deposition of a sacrificial layer (polymer) on top of the surface to be machined, which indeed behaves as a protective mask during the ablation process since the ejected material deposits on top of the polymer instead of the adjacent areas of the processed material. Upon completion, the polymer is simply peeled off from the surface, leaving a perfect finish behind.
  • This technique for improving surface finish after material ablation produces a surface finish comparable to femtosecond laser ablation, but with an inexpensive laser and a fraction of the production time on various materials. Sample surface being flat, it becomes possible to stack many plates over each other (flip-chip integration). Furthermore, this technique could allow the ablation of materials that display low absorption at laser wavelength: the polymer film behaving here as both a protector and a heat source.
  • the non-restrictive illustrative embodiment of the process according to the present invention enables creation of optical waveguides in amorphous and crystalline materials, for example in thin films on a silicon substrate by modifying or ablating material to leave behind a ridge being defined between two trenches.
  • the process is distinct from other laser writing techniques as the depth of the trenches does not extend throughout the material.
  • the structure of the core layer can be preserved by modifying or ablating only the cladding layer, the optical waveguide resulting thereof being a strip-loaded waveguide. Even though two trenches are required to create an optical waveguide, the overall fabrication time is orders of magnitude shorter than with other direct laser writing techniques.
  • the writing speed can be of the order of 50 mm/sec.
  • this direct laser micromachining process is even faster as the structure of the core layer is preserved.
  • the proposed method allows for the fabrication of waveguide devices in nonlinear materials (e.g. PPLN (Periodically Poled Nonlinear Crystals), KTP (Potassium Titanyl Phosphate), BBO (Beta Barium Borate (BaB 2 O ⁇ ), etc.) and particularly in poled glasses.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un guide d'ondes à moulure ainsi qu'un guide d'onde optique comprenant ce guide d'onde à moulure. Plus spécifiquement, le guide d'ondes à moulure est constitué d'un guide d'ondes optique réalisé au moyen d'une couche de gainage, une couche d'âme et éventuellement d'une couche tampon superposées. Par modification de deux bandes latérales adjacentes du guide d'ondes optique à partir de la surface extérieure de la couche de gainage, un guide d'ondes à moulure est formé entre ces deux bandes modifiées. La modification peut être effectuée par micro-usinage laser direct de deux tranchées dans le guide d'ondes optique. Dans un mode de réalisation, les bandes ou tranchées modifiées s'étendent depuis la surface extérieure de la couche de gainage et au moins à travers l'épaisseur de la couche de gainage et tout au plus à travers l'épaisseur de la couche de gainage et d'une partie de l'épaisseur de la couche de coeur. Dans un autre mode de réalisation, les tranchées s'étendent au moins à travers l'épaisseur de la couche de gainage et peuvent creuser à travers la couche de coeur. Avantageusement, les tranchées présentent un profil gaussien.
PCT/CA2006/000830 2005-05-19 2006-05-19 Procede de micro-usinage laser direct de guides d'ondes optiques et guides d'ondes optiques ainsi produits WO2006122429A1 (fr)

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
US8731343B2 (en) 2011-02-24 2014-05-20 Xyratex Technology Limited Optical printed circuit board, a method of making an optical printed circuit board and an optical waveguide
WO2017037680A1 (fr) * 2015-09-02 2017-03-09 Elemission Inc. Procédé et système d'analyse d'échantillons utilisant la spectroscopie par claquage induit par éclair laser
US20220326555A1 (en) * 2021-03-30 2022-10-13 Tdk Corporation Optical device

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8731343B2 (en) 2011-02-24 2014-05-20 Xyratex Technology Limited Optical printed circuit board, a method of making an optical printed circuit board and an optical waveguide
WO2017037680A1 (fr) * 2015-09-02 2017-03-09 Elemission Inc. Procédé et système d'analyse d'échantillons utilisant la spectroscopie par claquage induit par éclair laser
US10983062B2 (en) 2015-09-02 2021-04-20 Elemission Inc. Method and system for analysis of samples using laser induced breakdown spectroscopy
US20220326555A1 (en) * 2021-03-30 2022-10-13 Tdk Corporation Optical device

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