WO2006095399A1

WO2006095399A1 - Photolithography method

Info

Publication number: WO2006095399A1
Application number: PCT/JP2005/003882
Authority: WO
Inventors: Hiroshi Shirataki
Original assignee: Fujitsu Limited
Priority date: 2005-03-07
Filing date: 2005-03-07
Publication date: 2006-09-14

Abstract

A lithography method by which a photosensitive resist layer can be developed without having a resist pattern deformed by a hitting shock of the developing solution, nor generating a difference in photosensitive resist layer development rate by area nor causing deterioration and excessive consumption of the developing solution. The photosensitive resist layer (Wa) is formed on a surface of a work (W), the photosensitive resist layer (Wa) is exposed by a prescribed pattern, the developing solution is supplied on the surface of the work (W) by placing the work (W) in an atmosphere (26) including the developing solution, and the resist layer (Wa) is developed into the prescribed pattern.

Description

Specification

Photolithographic method

Technical field

In the present invention, a photosensitive resist layer is formed on a workpiece surface, the photosensitive resist layer is exposed with a predetermined pattern, a developer is supplied to the workpiece surface, and the photosensitive resist layer is applied to the predetermined pattern. The present invention relates to a photolithography method.

Background art

[0002] In the manufacturing process of a semiconductor device, a predetermined wiring pattern is formed on a semiconductor wafer, or on the Al O TiC substrate in the manufacturing process of a magnetic head of a hard disk device.

Photolithography technology is widely used when forming a predetermined magnetic film pattern on the 2 3.

For example, in a semiconductor device manufacturing process, a conductive layer is formed on a semiconductor wafer, a photosensitive resist layer is formed on the conductive layer by photolithography in a predetermined pattern, and only the exposed portion of the conductive resist layer is exposed. The conductor layer is formed into a predetermined wiring pattern by etching. In the magnetic head manufacturing process,

A magnetic film is formed on an Al 2 O 3 TiC substrate, and a photosensitive layer is formed on the magnetic film by photolithography.

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The magnetic layer is formed in a predetermined pattern by forming the resist layer in a predetermined pattern and etching only the portion of the magnetic film exposed from the photosensitive resist layer.

The typical method of photolithography is to work on a workpiece such as a semiconductor wafer or Al O TiC substrate.

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A photosensitive resist layer is formed on the surface, the photosensitive resist layer is exposed in a predetermined pattern, a developer is supplied to the surface of the workpiece, and the photosensitive resist layer is developed into the predetermined pattern. A resist layer having a pattern is formed.

A developing method in conventional photolithography and an image apparatus used in photolithography are described in Patent Document 1. The developing device described in Patent Document 1 is shown in FIG. In this developing device, a spin head 3 on which a workpiece 10 (workpiece) can be placed and moved up and down and rotated, a dip tank 4 surrounding the spin head 3 and storing developer 11, and a workpiece Shower nozzle 2 that supplies developer 11 in a shower-like manner to 10 and the object to be processed 10 A movable nozzle 1 for supplying the developer 11 is provided at a desired position.

During development, the developer 11 is supplied from the shower nozzle 2 or the movable nozzle 1 to the workpiece 10 on the spin head 3 or the spin head 3 is lowered to develop the developer in the dip tank 4. By immersing the object to be processed 10 in 11, the resist (photosensitive resist layer) on the surface of the object to be processed 10 can be developed.

According to the developing device and the developing method described in Patent Document 1, the displacement of the movable nozzle 1, the rotation of the spin head 3, the immersion of the workpiece 10 in the developer 11 in the dip tank 4 by the lowering of the spin head 3, etc. Various development processes can be performed by arbitrarily combining these operations.

Patent Document 1: Japanese Patent Laid-Open No. 11-242341

Disclosure of the invention

However, the conventional photolithography development method described in Patent Document 1 has the following problems!

First, if the developer 11 is supplied from the shower nozzle 2 or the movable nozzle 1 to the resist of the object 10 to be processed, the resist pattern may be destroyed due to the impact when the developer 11 hits the resist. There are challenges.

In the resist, where the developer 11 dropped from the shower nozzle 2 or the movable nozzle 1 directly hits and where the developer 11 flows on the surface of the workpiece 10 and touches it, the developing in contact with the resist. There is a problem that a difference occurs in the development rate due to a difference in the pressure of the liquid and a time difference during which the developer flows on the surface of the workpiece 10 and spreads.

In the method of immersing the object to be processed 10 in the developer 11, the above problem can be solved. However, since the developer 11 needs to be stored, the developer 11 is oxidized by oxygen in the air. However, there is a problem that the developer 11 is often deteriorated or the stored developer 11 needs to be frequently replaced to prevent the deterioration, and the developer is consumed wastefully. The present invention has been made to solve the above-mentioned problems, and the object of the present invention is that the resist pattern is destroyed by the impact when the developer hits, or the image rate of the photosensitive resist layer varies depending on the location. An object of the present invention is to provide a photolithography method capable of developing a photosensitive resist layer without causing deterioration or excessive consumption of the developer. In order to solve the above problems, a photolithography method according to the present invention comprises the following arrangement. That is, a photosensitive resist layer is formed on the workpiece surface, the photosensitive resist layer is exposed in a predetermined pattern, and the workpiece is placed in an atmosphere containing a developer to supply a developing solution to the workpiece surface. The layer is developed into the predetermined pattern.

According to this, since the developer is supplied to the surface of the workpiece by placing the workpiece in an atmosphere containing the developer, the developer is compared with the conventional method in which the developer is dropped and supplied onto the photosensitive resist layer. The resist pattern does not collapse due to the impact of the contact with the film, and since the developer is uniformly supplied to the surface of the wafer at the same time, there is no difference in the image rate of the photosensitive resist layer depending on the location. Furthermore, since the developer is not stored in a container or the like, the developer is not deteriorated or excessively consumed.

Furthermore, the atmosphere is formed by misting the developer by applying Ultrasonic or Megasonic to the developer.

According to this, the atmosphere containing the developer can be configured by an inexpensive and simple method.

Further, the atmosphere is formed by vaporizing the developing solution, and the developing solution is supplied to the work surface by dew condensation.

Further, the developer is vaporized by heating.

Alternatively, the developer is vaporized by placing it in a vacuum or a reduced pressure state. According to this, the atmosphere containing the developer can be configured by an inexpensive and simple method.

Furthermore, the developer is condensed on the surface of the work by cooling the work.

According to this, the vaporized developer can be efficiently supplied to the work surface. Furthermore, the work is cooled by vacuum-sucking the back surface of the photosensitive resist layer forming surface of the work surface.

Alternatively, the workpiece is cooled by a Peltier effect.

According to this, the workpiece can be cooled by an inexpensive and simple method. [0004] Effect of the Invention

According to the photolithography method of the present invention, the resist pattern is destroyed due to the impact when the developer hits, the development rate of the photosensitive resist layer varies depending on the location, the developer is deteriorated or excessively consumed. It is possible to develop the photosensitive resist layer without causing it.

Brief Description of Drawings

FIG. 1 is an explanatory diagram showing a developing device for developing a photosensitive resist layer in a photolithography method according to Embodiment 1 of the present invention.

FIG. 2 is an explanatory view showing a developing device for developing a photosensitive resist layer in a photolithography method according to Embodiment 2 of the present invention.

FIG. 3 is an explanatory view showing a developing device for developing a photosensitive resist layer in a conventional photolithography method.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the best mode for carrying out a photolithography method according to the present invention will be described. This embodiment is a photolithography method performed in a manufacturing process of a magnetic head.

Example 1

[0007] First, the surface of an Al 2 O TiC substrate (work) on which a magnetic film or the like is formed, that is, a magnetic film or the like

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A photosensitive resist layer is formed on the upper layer. Subsequently, the desired to be formed on the Al O TiC substrate

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The photosensitive resist layer is exposed in accordance with a pattern such as a magnetic film. Up to this point, the process is the same as that of a photolithography method that has been generally performed.

FIG. 1 is an explanatory view showing a developing apparatus A for developing the photosensitive resist layer Wa in the photolithography method according to the first embodiment.

Developer A can place an Al O TiC substrate W as a workpiece inside.

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On the other hand, the chamber 22 that can be sealed, the developer supply device 23, and the developer supply device 23 are sprayed into the chamber 22 and supplied to the chamber 1 in the form of a mist. Possible nozzle 24. As the nozzle 24, for example, a spray nozzle humidifier nozzle or a two-fluid atomizing nozzle manufactured by Spraying Systems Japan Co., Ltd. can be used. Or, you can use Sono-Tek's ultrasonic spray nozzle system as a nozzle that causes misting by applying Ultrasonic to the developer.

In the development process, the Al O TiC substrate W that has been exposed is placed in the chamber 22.

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By arranging and spraying the developer from the nozzle 24 in the form of a mist, an atmosphere 26 containing the developer is formed in the chamber 22.

The mist developer filled in the chamber 22 is evenly distributed on the surface of the Al O TiC substrate W.

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The attached developer causes the photosensitive resist layer Wa to be developed.

Example 2

The photolithographic method according to Example 2 includes a magnetic film formed on an Al 2 O 3 TiC substrate, etc.

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The process up to the formation of the photosensitive resist layer on the surface and the exposure of the photosensitive resist layer is the same as in Example 1.

FIG. 2 is an explanatory view showing a developing device B for developing the photosensitive resist layer Wa in the photolithography method according to the second embodiment.

Developer B can place Al O TiC substrate W as a work inside,

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A chamber 22 that can be sealed; a developer heating device 28 that heats and vaporizes the developer; a hose 30 that introduces the developer vaporized by the developer heating device 28 into the chamber 22; And a cooling device 31 capable of cooling the Al 2 O 3 TiC substrate W.

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The cooling device 31 vacuum-sucks the back surface of the Al O TiC substrate W on which the photosensitive resist layer Wa is formed.

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It is configured to cool the Al 2 O 3 TiC substrate W by wearing it. Al O TiC substrate

2 3 2 3 W should be configured to be cooled by the Peltier effect or by a liquid refrigerant such as water.

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The developer that is disposed and heated to about 100 ° C. by the developer heating device 28 and vaporized is supplied into the chamber 22 through the hose 30. As a result, the atmosphere 32 containing the vaporized developer is formed in the chamber 22.

At the same time, the Al 2 O 3 TiC substrate W is cooled by the cooling device 31. The evaporated developer filled in the chamber 22 is the surface of the cooled Al O TiC substrate W.

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Condensation on the surface uniformly adheres to the surface, and the attached developer develops the photosensitive resist layer Wa. Note that the cooling of the Al O TiC substrate W by the cooling device 31 is due to the formation of vaporized developer.

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This is to increase the efficiency of the dew, but the developer can sufficiently condense on the surface of the Al O TiC substrate W.

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If the conditions are met, this cooling is not necessarily done! ,.

Also, instead of heating the developer to vaporize it, vaporize it by placing the developer in a vacuum or reduced pressure.

According to the photolithography method according to the first embodiment or the second embodiment, a work is placed in an atmosphere containing a developer, and a mist-like developer is adhered to the surface of the work, or the vaporized developer is condensed. Therefore, the resist pattern does not collapse due to the impact when the developer hits it as in the conventional method. In addition, since the developer is uniformly supplied to the work surface without any time difference, there is no difference in the development rate of the photosensitive resist layer depending on the location. Further, after the work is placed in the chamber 22, the mist-like or vaporized developer is supplied into the chamber 122, so that the developer is not deteriorated or excessively consumed.

Industrial applicability

The above embodiment is a photolithography method performed in the manufacturing process of the magnetic head, but the photolithography method according to the present invention is not limited to this, for example, any photolithography method in the manufacturing process of the semiconductor device, etc. Includes photolithographic methods.

Claims

The scope of the claims

[1] Form a photosensitive resist layer on the workpiece surface,

Exposing the photosensitive resist layer in a predetermined pattern;

A photolithography method, wherein the workpiece is placed in an atmosphere containing a developer to supply a developer to the surface of the workpiece, and the photosensitive resist layer is developed into the predetermined pattern.

[2] The photolithography method according to claim 1, wherein the atmosphere is formed by applying an ultrasonic or a megasonic to the developing solution to cause the developing solution to become misted.

[3] The atmosphere is formed by vaporizing the developer,

The photolithography method according to claim 1, wherein the developer is supplied to the work surface by dew condensation.

4. The photolithographic method according to claim 3, wherein the developer is vaporized by heating.

5. The photolithography method according to claim 3, wherein the developer is vaporized by being placed in a vacuum or a reduced pressure state.

6. The photolithography method according to any one of claims 3 to 5, wherein the developer is condensed on the surface of the work by cooling the work.

7. The photolithography method according to claim 6, wherein the work is cooled by vacuum-sucking the back surface of the photosensitive resist layer forming surface of the workpiece surface.

8. The photolithographic method according to claim 6, wherein the workpiece is cooled by a Peltier effect.