WO2006092936A1 - Semiconductor thin film or electromagnetic induction heating method for semiconductor wafer - Google Patents

Semiconductor thin film or electromagnetic induction heating method for semiconductor wafer Download PDF

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Publication number
WO2006092936A1
WO2006092936A1 PCT/JP2006/302068 JP2006302068W WO2006092936A1 WO 2006092936 A1 WO2006092936 A1 WO 2006092936A1 JP 2006302068 W JP2006302068 W JP 2006302068W WO 2006092936 A1 WO2006092936 A1 WO 2006092936A1
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Prior art keywords
thin film
semiconductor thin
heating
semiconductor wafer
semiconductor
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PCT/JP2006/302068
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French (fr)
Japanese (ja)
Inventor
Seiichi Iwamatsu
Yukihiro Murakami
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Intellectual Property Bank Corp.
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Publication of WO2006092936A1 publication Critical patent/WO2006092936A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates to a method of directly heating a semiconductor thin film or a semiconductor wafer by electromagnetic induction.
  • the present invention improves the charge mobility by directly heating or crystallizing a semiconductor thin film deposited on an insulating substrate such as glass, quartz, or ceramic by an electromagnetic induction heating method and lowering the power consumption of the heating power.
  • the purpose is to reduce the power consumption of the heating power by heating the semiconductor wafer loaded on an insulating support such as glass, quartz or ceramic by the electromagnetic induction heating method.
  • TFTs Thin Film Transistors
  • methods for crystallizing a semiconductor thin film such as an amorphous silicon thin film include a resistance heating electric furnace method, a lamp annealing method, and a strip micro heater method.
  • a resistance heating electric method for heating a semiconductor wafer loaded on an insulating support base there is a furnace method, a lamp annealing method, etc., and there are methods such as a high frequency induction heating furnace method that heats a semiconductor wafer loaded on a carbon support table, but each of them has a problem of high power consumption.
  • the mechanism is such that a substrate on which a semiconductor thin film is deposited is introduced into the high-frequency induction coil and the entire substrate is heated.
  • materials with different dielectric constants and resistivity such as deposited amorphous silicon thin film
  • the melting point of the quartz or glass substrate will not only cause a temperature difference between the materials.
  • a laser beam antireflection film and a laser beam heating prevention film are laminated in this order on an amorphous silicon film as a semiconductor thin film on an insulating substrate.
  • the layered structure is formed in stripes at regular intervals, and the amorphous thin film as the semiconductor thin film on which the layered structure is formed is irradiated with laser light, and the layered structure is not formed.
  • a 53 nm-thickness plasma CVD Si02 film was formed as a laser beam antireflection film on a silicon thin film as a crystalline semiconductor thin film, and a 300 nm film thickness was formed as a laser beam reflection film.
  • An aluminum film was formed by the method.
  • the S102 film and the aluminum film were formed in a stripe pattern so that the width of the S102 film and the aluminum film was 2 m, and the distance between the stacked portions was 2.5 m.
  • XeCl (wavelength 308 nm) laser light is irradiated to crystallize, and the grain boundary grain size is measured using a scanning electron microscope.
  • the average width is 1.3 ⁇ m and the length is 2.2 ⁇ m. It was shown that. If the length force from the source to the drain of TFT is not less than ⁇ m, there will always be one grain boundary boundary.
  • a reaction vessel and a heating element that also serves as a semiconductor wafer support that has a force such as carbon disposed in a plane in the reaction vessel.
  • the present invention provides a heating device excellent in heat uniformity that can heat the heating element by energizing the high-frequency induction coil that winds the heating element and uniformly heat the entire surface of the semiconductor wafer.
  • this method also has a force such as carbon in the winding high frequency induction coil. Since the heating element that also serves as a semiconductor wafer support and the semiconductor wafer are put in, the energy required to heat both the semiconductor wafer support and the semiconductor wafer, such as carbon, is required, so that power consumption increases.
  • a high-frequency induction coil is placed under a carbon support base, the carbon support base is subjected to electromagnetic induction heating, and a semiconductor wafer placed on the carbon support base is mounted.
  • Indirect heating is performed by heat conduction or heat radiation from an electromagnetic induction heated carbon support, but there is a drawback that the apparatus becomes larger and the power consumption increases.
  • Patent Document 1 Japanese Patent Application 2002-223124
  • Patent Document 2 Japanese Patent Application 2002-212564
  • Patent Document 3 Japanese Patent Application No. 11-173699
  • a high frequency induction coil is arranged by separating an insulating substrate on which a semiconductor thin film has been deposited, the semiconductor thin film surface, the semiconductor thin film back surface, or the double-sided force between the semiconductor thin film surface and the back surface. Then, take measures to directly heat the semiconductor thin film to crystallize the semiconductor thin film, and arrange a high-frequency induction coil by separating the surface of the semiconductor wafer, the back surface of the semiconductor wafer, or the double-sided force between the front and back surfaces of the semiconductor wafer. Then, a means for directly heating the semiconductor wafer loaded on the insulating support base by electromagnetic induction is taken.
  • the invention's effect is arranged by separating an insulating substrate on which a semiconductor thin film has been deposited, the semiconductor thin film surface, the semiconductor thin film back surface, or the double-sided force between the semiconductor thin film surface and the back surface. Then, take measures to directly heat the semiconductor thin film to crystallize the semiconductor thin film, and arrange a high-frequency induction coil by separating the surface of
  • the crystal grain boundaries are reduced even in a structure in which materials having different melting points are laminated. It is possible to crystallize a semiconductor thin film without enlarging it, and it has the effect of improving the charge mobility of the crystallized semiconductor thin film, and since it is a direct heating of only the semiconductor thin film, it is less than 50% There is an effect that power consumption can be reduced.
  • FIG. 1 is a schematic diagram of the main part of an electromagnetic induction heating method of a semiconductor thin film showing one embodiment of the present invention.
  • FIG. 2 is a schematic plan view of a coil portion of an electromagnetic induction heating method of a semiconductor thin film showing an embodiment of the present invention.
  • FIG. 3 is a schematic view of the main part of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention.
  • FIG. 4 is a schematic plan view of a coil portion of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention.
  • an insulating substrate white glass or quartz glass having a thickness of about lmm or less and a soft melting point of 400 ° C or more.
  • an amorphous silicon film with a thickness of about 0.1 ⁇ m or less is used, and a copper high-frequency coil is used, and 600 ° C to 1200 ° C in an inert atmosphere such as nitrogen gas An eddy current was induced in the semiconductor thin film by high frequency induction in C, and the amorphous silicon film was directly heated to form a polycrystalline silicon film.
  • a quartz three-point support base is used, and on the support base, a semiconductor wafer is used as a silicon wafer, and a copper high-frequency coil is used. In the process, eddy currents were induced in the semiconductor substrate by high frequency induction at the processing temperature, and the silicon wafer was directly heated.
  • FIG. 1 is a schematic diagram of the main part of an electromagnetic induction heating method of a semiconductor thin film showing an embodiment of the present invention.
  • the semiconductor thin film 2 is also deposited, and the substrate to be treated on which the semiconductor thin film 2 is deposited is introduced into the processing chamber 3 filled with an inert gas such as quartz, and the semiconductor thin film 2
  • a coil 4 having a force such as a copper wire, a copper plate, or a copper pipe is disposed at a position away from the coil 4.
  • An eddy current is induced in the semiconductor thin film 2 by being induced by the electromagnetic wave 6, and the semiconductor thin film 2 is heated.
  • the entire surface of the semiconductor thin film 2 deposited on the surface of the substrate to be processed is swept and heated by applying a high frequency to the coil 4 and simultaneously scanning the substrate 7 in one direction.
  • the processing chamber 3 does not necessarily need to be a closed chamber. Even if the processing chamber 3 is an open chamber with the left and right sides open, it is sufficient if the pressure is positive with respect to the external pressure. It is sufficient if there is no import into 3. Furthermore, the processing chamber 3 may be closed and in a negative pressure state such as a vacuum state.
  • the semiconductor thin film heat treatment is not limited to crystallization of the semiconductor thin film 2, but film formation on the semiconductor thin film 2 by CVD or PVD, oxide film growth treatment in an oxidizing atmosphere, or etching treatment. It can also be applied to washing or drying treatments.
  • the heating temperature may be appropriately set to a processing temperature up to the melting point of the semiconductor thin film 2 at room temperature or higher (up to about 1300 ° C in the case of a silicon thin film).
  • the coil 4 may be scanned along the surface of the semiconductor thin film 2 not only by scanning the substrate to be processed but also by high-frequency electromagnetic waves.
  • Fig. 2 is a schematic plan view of the four-part coil of the electromagnetic induction heating method for a semiconductor thin film in Fig. 1 showing an embodiment of the present invention. The configuration in which high frequency is applied is shown.
  • the coil shape and its arrangement do not necessarily need to be a flat rectangular shape, and the coil shape and the arrangement may be separated from the semiconductor thin film 2 to be heated and disposed at a position where the semiconductor thin film 2 can be efficiently irradiated with electromagnetic waves.
  • two pairs of upper and lower coils may be arranged, and the object to be processed may be wound, for example, in the cross-sectional direction of the semiconductor film 2 in FIG.
  • FIG. 3 is a schematic diagram of the main part of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention.
  • FIG. I installed on the insulating support base 9 which is installed in the processing chamber 3 which is made of stone, etc., and is adjusted to a predetermined atmosphere and pressure, and is mounted on the insulating support base 9 which is forceful.
  • an eddy current is induced in the semiconductor wafer 8 to heat the semiconductor wafer 8.
  • the semiconductor wafer heat treatment can be applied to film formation by CVD or PVD on the semiconductor wafer 8, oxide film growth treatment in an oxidizing atmosphere, etching treatment, cleaning treatment, or drying treatment.
  • the heating temperature is normal or higher and the melting temperature of the semiconductor wafer 8 is higher than the melting point (in the case of silicon 'wafer, it is higher than 1300 ° C). It's time to meet! / ⁇ .
  • FIG. 4 is a schematic plan view of the coil 4 part of the electromagnetic induction heating method for a semiconductor wafer in FIG. 3 showing another embodiment of the present invention. Show the configuration where the high frequency is applied!
  • the coil shape and its arrangement need not necessarily be a flat circular shape, and are separated from the semiconductor wafer 8 to be heated such as a rectangular shape, a rectangular shape, or a spiral shape thereof. If the semiconductor wafer 8 is arranged at a position where it can efficiently irradiate electromagnetic waves, two pairs of upper and lower coils are arranged, and the object to be processed is arranged by winding in the cross-sectional direction of the semiconductor wafer 8 in FIG. It may be arranged around 8 or so.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

If a laser beam is used when an amorphous semiconductor thin film deposited on a glass substrate is crystallized, such problems arise that a grain boundary is rendered giant and charge conduction characteristics between giant grain boundaries deteriorate. A method of indirectly heating a semiconductor wafer placed on a support table by resistance heating, infrared heating using lamp heating or a high-frequency induction coil requires a large power consumption. The step of directly heating and crystallizing a semiconductor thin film that is produced by depositing the semiconductor thin film on an insulation substrate and exists on the substrate by electromagnetic induction heating is used during the crystallization, whereby the size of the grain boundary of the crystallized semiconductor thin film is prevented from growing giant and power consumption is reduced. A semiconductor wafer placed on a support table is directly heated by an electromagnetic induction heating method to reduce power consumption.

Description

明 細 書  Specification
半導体薄膜または半導体ウェハの電磁誘導加熱法  Electromagnetic induction heating method for semiconductor thin film or semiconductor wafer
技術分野  Technical field
[0001] 本発明は、半導体薄膜や半導体ウェハを、電磁誘導により直接加熱する方法に関 する。  [0001] The present invention relates to a method of directly heating a semiconductor thin film or a semiconductor wafer by electromagnetic induction.
[0002] 本発明は、ガラスや石英あるいはセラミックなどの絶縁基板上に堆積した半導体薄 膜を電磁誘導加熱法により直接加熱あるいは結晶化して電荷の移動度を向上すると 共に加熱電力の低消費電力化を図る事と、ガラスや石英ある 、はセラミックなどの絶 縁支持台上に積載した半導体ウェハを電磁誘導加熱法により加熱する事により加熱 電力の低消費電力化を図る事を目的とする。  [0002] The present invention improves the charge mobility by directly heating or crystallizing a semiconductor thin film deposited on an insulating substrate such as glass, quartz, or ceramic by an electromagnetic induction heating method and lowering the power consumption of the heating power. The purpose is to reduce the power consumption of the heating power by heating the semiconductor wafer loaded on an insulating support such as glass, quartz or ceramic by the electromagnetic induction heating method.
背景技術  Background art
[0003] 近年、大画面薄型テレビゃ大画面薄型ディスプレーなどが、急速に普及し、より高 精細であり、且つ、より高速に動作する事が求められている。液晶を用いた大画面薄 型ディスプレーの場合、大画面化に伴い高速に電荷を制御できる TFT (Thin Film Tr ansistor)と呼ぶトランジスターを画面上に配置したものが主流になっている。  [0003] In recent years, large-screen thin TVs and large-screen thin displays are rapidly spreading, and there is a demand for higher definition and higher speed operation. In the case of large-screen thin displays using liquid crystals, transistors called TFTs (Thin Film Transistors) that can control charges at high speed as the screen becomes larger have become the mainstream.
[0004] 従来、 TFTは、ガラスや石英あるいはセラミックなどの絶縁基板上に堆積したァモル ファス ·シリコン薄膜などの半導体薄膜を、レーザァニール法などを用いて結晶化す る方法が用いられてきた。  Conventionally, a method for crystallizing a semiconductor thin film such as an amorphous silicon thin film deposited on an insulating substrate such as glass, quartz, or ceramic using a laser annealing method has been used for TFT.
[0005] この他に、アモルファス 'シリコン薄膜などの半導体薄膜を結晶化する方法には、抵 抗加熱電気炉法、ランプアニール法、ストリップマイクロヒーター法などがある。  In addition to this, methods for crystallizing a semiconductor thin film such as an amorphous silicon thin film include a resistance heating electric furnace method, a lamp annealing method, and a strip micro heater method.
[0006] 抵抗加熱電気炉法では、基板全体を加熱するため、例えば、ガラス基板上のァモ ルファス'シリコン薄膜を結晶化する場合、ガラス基板の軟ィ匕点とアモルファス'シリコ ン薄膜の融点とが大きく異なるために、ガラス基板の変形やそりや、場合よつては溶 融する恐れがあり、 400度以下の比較的低温で多結晶化するのに用いられたりしてき たが、結晶が巨大化したり、結晶化後の表面が凸凹してラフネスが増すなどの問題 かあつた。  [0006] In the resistance heating electric furnace method, for example, when crystallizing an amorphous' silicon thin film on a glass substrate to heat the entire substrate, the soft spot of the glass substrate and the melting point of the amorphous silicon thin film are used. Has been used for crystallization at relatively low temperatures of 400 degrees or less, but the crystals are huge. The problem was that the surface after crystallization became uneven and the roughness increased due to unevenness on the surface after crystallization.
[0007] また、絶縁支持台上に積載した半導体ウェハを加熱する方法には抵抗加熱電気 炉法、ランプアニール法などがあり、カーボン支持台上に積載した半導体ウェハをカロ 熱する方法には高周波誘導加熱炉法などがあるが、いずれも消費電力が大きいとい う問題があった。 [0007] Further, there is a resistance heating electric method for heating a semiconductor wafer loaded on an insulating support base. There are a furnace method, a lamp annealing method, etc., and there are methods such as a high frequency induction heating furnace method that heats a semiconductor wafer loaded on a carbon support table, but each of them has a problem of high power consumption.
[0008] 従来、高周波誘導コイルを使用した高周波誘導加熱炉では、高周波誘導コイル内 に半導体薄膜を堆積した基板を導入し、基板全体を加熱する機構であるため、例え ば石英やガラス基板上に堆積したアモルファス ·シリコン薄膜の様な誘電率や抵抗率 の異なった素材を高周波誘導加熱炉に導入して加熱した場合に、素材間で温度差 が発生するだけでなぐ石英やガラス基板の融点がアモルファス.シリコン薄膜より低 [0008] Conventionally, in a high-frequency induction heating furnace using a high-frequency induction coil, the mechanism is such that a substrate on which a semiconductor thin film is deposited is introduced into the high-frequency induction coil and the entire substrate is heated. When materials with different dielectric constants and resistivity, such as deposited amorphous silicon thin film, are introduced into a high-frequency induction heating furnace and heated, the melting point of the quartz or glass substrate will not only cause a temperature difference between the materials. Amorphous, lower than silicon thin film
V、ために、加熱処理中に溶融してしまう問題があった。 Because of V, there was a problem of melting during the heat treatment.
[0009] また、特許文献 1に記載の方法よれば、絶縁基板上の半導体薄膜としてのァモルフ ァス 'シリコン薄膜上に、レーザ光反射防止膜と、レーザ光加熱防止膜とがこの順番 に積層された積層構造を、一定の間隔をあけてストライプ状に形成し、当該積層構造 が形成された半導体薄膜としてのアモルファス 'シリコン薄膜上にレーザ光を照射し て、積層構造が形成されていない部分の半導体薄膜としてのシリコン薄膜を結晶化 させる方法がある。この方法の実施例として、結晶性の半導体薄膜としてのシリコン 薄膜上に、レーザ光線反射防止膜として 53nmの膜厚のプラズマ CVD法 Si02膜を 形成し、レーザ光線反射膜として 300nmの膜厚のスパッタリング法によるアルミ-ゥ ム膜を形成した。次に、 S102膜及びアルミニウム膜が 2 mの幅寸法を有し、それ ぞれの積層部分の間隔が 2. 5 mになるようにストライプ状にパターン形成した。そ の後、 XeCl (波長 308nm)レーザ光を照射して、結晶性ィ匕し、結晶粒界の粒径を走 查電子顕微鏡を用いて計測し、平均約幅 1.3 μ mX長さ 2.2 μ mである事を示した。 TF Tのソースからドレインに至る長さ力 μ m以下でない場合、必ず 1つの結晶粒界同 士の境界が存在する事になる。  In addition, according to the method described in Patent Document 1, a laser beam antireflection film and a laser beam heating prevention film are laminated in this order on an amorphous silicon film as a semiconductor thin film on an insulating substrate. The layered structure is formed in stripes at regular intervals, and the amorphous thin film as the semiconductor thin film on which the layered structure is formed is irradiated with laser light, and the layered structure is not formed. There is a method of crystallizing a silicon thin film as a semiconductor thin film. As an example of this method, a 53 nm-thickness plasma CVD Si02 film was formed as a laser beam antireflection film on a silicon thin film as a crystalline semiconductor thin film, and a 300 nm film thickness was formed as a laser beam reflection film. An aluminum film was formed by the method. Next, the S102 film and the aluminum film were formed in a stripe pattern so that the width of the S102 film and the aluminum film was 2 m, and the distance between the stacked portions was 2.5 m. After that, XeCl (wavelength 308 nm) laser light is irradiated to crystallize, and the grain boundary grain size is measured using a scanning electron microscope. The average width is 1.3 μm and the length is 2.2 μm. It was shown that. If the length force from the source to the drain of TFT is not less than μm, there will always be one grain boundary boundary.
[0010] また、特許文献 2に記載の方法によれば、反応容器と、この反応容器内に平面状に 設置された配設されたカーボンなど力 成る半導体ウェハ支持台を兼ねた発熱体と を備え、この発熱体を卷回する高周波誘導コイルへの通電により発熱体を発熱、半 導体ウェハ全面を均一に加熱することのできる均熱性に優れた加熱装置を提供して いる。しかし、この方法は、卷回する高周波誘導コイルの中にカーボンなど力も成る 半導体ウェハ支持台を兼ねた発熱体と半導体ウェハを入れるために、カーボンなど 力 成る半導体ウェハ支持台と半導体ウェハの双方を加熱するエネルギーを要する 為に、消費電力も大きくなるという欠点があった。 [0010] In addition, according to the method described in Patent Document 2, a reaction vessel and a heating element that also serves as a semiconductor wafer support that has a force such as carbon disposed in a plane in the reaction vessel. In addition, the present invention provides a heating device excellent in heat uniformity that can heat the heating element by energizing the high-frequency induction coil that winds the heating element and uniformly heat the entire surface of the semiconductor wafer. However, this method also has a force such as carbon in the winding high frequency induction coil. Since the heating element that also serves as a semiconductor wafer support and the semiconductor wafer are put in, the energy required to heat both the semiconductor wafer support and the semiconductor wafer, such as carbon, is required, so that power consumption increases.
[0011] また、特許文献 3に記載の方法によれば、高周波誘導コイルをカーボン支持台下 に設置して、該カーボン支持台を電磁誘導加熱し、このカーボン支持台上に置いた 半導体ウェハを電磁誘導加熱されたカーボン支持台から熱伝導あるいは熱輻射で 間接的に加熱するものであるが、装置が大きくなると共に消費電力も大きくなるという 欠点があった。  [0011] Further, according to the method described in Patent Document 3, a high-frequency induction coil is placed under a carbon support base, the carbon support base is subjected to electromagnetic induction heating, and a semiconductor wafer placed on the carbon support base is mounted. Indirect heating is performed by heat conduction or heat radiation from an electromagnetic induction heated carbon support, but there is a drawback that the apparatus becomes larger and the power consumption increases.
[0012] 特許文献 1 :特願 2002- 223124 [0012] Patent Document 1: Japanese Patent Application 2002-223124
特許文献 2：特願 2002-212564  Patent Document 2: Japanese Patent Application 2002-212564
特許文献 3 :特願平 11-173699  Patent Document 3: Japanese Patent Application No. 11-173699
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0013] すなわち、ガラス基板上に堆積した非晶質半導体薄膜を結晶化する際に、レーザ 一光線を用いると、結晶粒界が巨大化する問題があり、当該巨大結晶粒界間におけ る電荷伝導特性が劣化すると云う問題があった。また、支持台に積載した半導体ゥェ ハを抵抗加熱やランプ加熱による赤外線加熱や高周波誘導コイルで間接的に加熱 する方法では、電力消費が多!、と 、う問題があった。 [0013] That is, when a single laser beam is used to crystallize an amorphous semiconductor thin film deposited on a glass substrate, there is a problem that the crystal grain boundary becomes large, and the crystal grain boundary is located between the giant crystal grain boundaries. There was a problem that the charge conduction characteristics deteriorated. Moreover, the method of indirectly heating the semiconductor wafer loaded on the support with the resistance heating or the infrared heating by the lamp heating or the high frequency induction coil has a problem that the power consumption is high.
課題を解決するための手段  Means for solving the problem
[0014] 上記課題を解決するために本発明では、半導体薄膜を堆積した絶縁基板を半導 体薄膜表面あるいは半導体薄膜裏面あるいは半導体薄膜表面と裏面の両面力 離 間して高周波誘導コイルを配して、当該半導体薄膜を直接に加熱して当該半導体薄 膜を結晶化する手段を取る事、および半導体ウェハ表面あるいは半導体ウェハ裏面 あるいは半導体ウェハ表面と裏面の両面力 離間して高周波誘導コイルを配して、 絶縁支持台上に積載した半導体ウェハを電磁誘導により直接加熱する手段を取る。 発明の効果 [0014] In order to solve the above problems, in the present invention, a high frequency induction coil is arranged by separating an insulating substrate on which a semiconductor thin film has been deposited, the semiconductor thin film surface, the semiconductor thin film back surface, or the double-sided force between the semiconductor thin film surface and the back surface. Then, take measures to directly heat the semiconductor thin film to crystallize the semiconductor thin film, and arrange a high-frequency induction coil by separating the surface of the semiconductor wafer, the back surface of the semiconductor wafer, or the double-sided force between the front and back surfaces of the semiconductor wafer. Then, a means for directly heating the semiconductor wafer loaded on the insulating support base by electromagnetic induction is taken. The invention's effect
[0015] 本発明によると、異なった融点を有する材料が積層した構造であっても結晶粒界を 巨大化させずに半導体薄膜を結晶化可能であり、結晶化した半導体薄膜の電荷の 移動度を向上する事が出来る効果が有ると共に、半導体薄膜のみの直接加熱である ので、 50%以上の低消費電力化を図る事が出来る効果がある。 [0015] According to the present invention, the crystal grain boundaries are reduced even in a structure in which materials having different melting points are laminated. It is possible to crystallize a semiconductor thin film without enlarging it, and it has the effect of improving the charge mobility of the crystallized semiconductor thin film, and since it is a direct heating of only the semiconductor thin film, it is less than 50% There is an effect that power consumption can be reduced.
[0016] また、絶縁性支持台上の半導体ウェハのみを直接加熱する場合には、カーボン製 支持台などの支持台をも加熱する為の余分なエネルギーを要さない為に、消費電力 を 50%以上と大幅に低減する事が出来る効果がある。 [0016] In addition, when only the semiconductor wafer on the insulating support base is directly heated, no extra energy is required to heat the support base such as the carbon support base. There is an effect that can be greatly reduced to more than%.
図面の簡単な説明  Brief Description of Drawings
[0017] [図 1]本発明の一実施例を示す半導体薄膜の電磁誘導加熱法の主要部の模式図。  FIG. 1 is a schematic diagram of the main part of an electromagnetic induction heating method of a semiconductor thin film showing one embodiment of the present invention.
[図 2]本発明の一実施例を示す半導体薄膜の電磁誘導加熱法のコイル部の平面模 式図である。  FIG. 2 is a schematic plan view of a coil portion of an electromagnetic induction heating method of a semiconductor thin film showing an embodiment of the present invention.
[図 3]本発明の他の実施例を示す半導体ウェハの電磁誘導加熱法の主要部の模式 図。  FIG. 3 is a schematic view of the main part of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention.
[図 4]本発明の他の実施例を示す半導体ウェハの電磁誘導加熱法のコイル部の平 面模式図である。  FIG. 4 is a schematic plan view of a coil portion of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention.
符号の説明  Explanation of symbols
1 絶縁基板  1 Insulating substrate
2 半導体薄膜  2 Semiconductor thin film
3 処理室  3 Processing chamber
4 コィノレ  4 Coinole
5 高周波電源  5 High frequency power supply
6 電磁波  6 Electromagnetic waves
7 走査処理  7 Scanning process
8 半導体ウェハ  8 Semiconductor wafer
9 絶縁支持台  9 Insulation support
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0019] 本発明の一実施形態として以下のように述べるが、本発明の実施形態はこの例に ある場合に限らない。  [0019] An embodiment of the present invention is described as follows, but the embodiment of the present invention is not limited to this example.
[0020] 絶縁基板としては厚さ lmm以下程度で軟ィ匕点 400°C以上の白板ガラスや石英ガラ スを使用し、堆積した半導体薄膜としては厚さ 0.1 μ以下程度のアモルファス'シリコ ン膜を使用し、銅製の高周波コイルを用いて、窒素ガスなどの不活性雰囲気内で 600 °Cから 1200°Cに高周波誘導により半導体薄膜に渦電流を誘起し、アモルファス'シリ コン膜を直接加熱して多結晶シリコン膜を形成した。 [0020] As an insulating substrate, white glass or quartz glass having a thickness of about lmm or less and a soft melting point of 400 ° C or more. As the deposited semiconductor thin film, an amorphous silicon film with a thickness of about 0.1 μm or less is used, and a copper high-frequency coil is used, and 600 ° C to 1200 ° C in an inert atmosphere such as nitrogen gas An eddy current was induced in the semiconductor thin film by high frequency induction in C, and the amorphous silicon film was directly heated to form a polycrystalline silicon film.
[0021] 絶縁支持台としては、石英製の 3点支持台を使用して、該支持台上に半導体ゥェ ノ、としてはシリコン 'ウェハを使用し、銅製の高周波コイルを用いて、処理雰囲気内で 処理温度に高周波誘導により半導体基板に渦電流を誘起し、シリコン 'ウェハを直接 加熱した。 [0021] As the insulating support base, a quartz three-point support base is used, and on the support base, a semiconductor wafer is used as a silicon wafer, and a copper high-frequency coil is used. In the process, eddy currents were induced in the semiconductor substrate by high frequency induction at the processing temperature, and the silicon wafer was directly heated.
[0022] 図面を用いて本発明の実施形態を説明する。  Embodiments of the present invention will be described with reference to the drawings.
実施例  Example
[0023] 以下実施例を用いてさらに具体的に説明する。  [0023] A more specific description will be given below using examples.
[0024] (実施例 1)図 1は、本発明の一実施例を示す半導体薄膜の電磁誘導加熱法の主 要部の模式図であって、図 1では絶縁基板 1上にはアモルファス 'シリコンなど力も成 る半導体薄膜 2が堆積されて成り、該半導体薄膜 2を堆積した被処理基板を石英な ど力も成り窒素などの不活性ガスで満たされた処理室 3内に導入し、半導体薄膜 2か ら離間した位置には銅線、銅板、銅パイプなど力 成るコイル 4を配し、該コイル 4に は高周波電源 5から高周波が印加され、コイル 4の間壁からは電磁波 6が放射され、 該電磁波 6に誘導されて半導体薄膜 2に渦電流が誘起されて、半導体薄膜 2を加熱 する。さらに、高周波をコイル 4に印加すると同時に被処理基板を一方向に走査処理 7をする事により、被処理基板の表面に堆積された半導体薄膜 2の全面を掃引加熱 する。  (Embodiment 1) FIG. 1 is a schematic diagram of the main part of an electromagnetic induction heating method of a semiconductor thin film showing an embodiment of the present invention. In FIG. The semiconductor thin film 2 is also deposited, and the substrate to be treated on which the semiconductor thin film 2 is deposited is introduced into the processing chamber 3 filled with an inert gas such as quartz, and the semiconductor thin film 2 A coil 4 having a force such as a copper wire, a copper plate, or a copper pipe is disposed at a position away from the coil 4. An eddy current is induced in the semiconductor thin film 2 by being induced by the electromagnetic wave 6, and the semiconductor thin film 2 is heated. Further, the entire surface of the semiconductor thin film 2 deposited on the surface of the substrate to be processed is swept and heated by applying a high frequency to the coil 4 and simultaneously scanning the substrate 7 in one direction.
[0025] なお、処理室 3は必ずしも閉室である必要は無ぐ左右を開放した開室であっても 外気圧に対して陽圧であれば良ぐ不活性ガス 'カーテンなどにより外気の処理室 3 内への取り込みが無ければ良い。さらに、処理室 3は閉室で真空状態などの負圧状 態であっても良い。  [0025] Note that the processing chamber 3 does not necessarily need to be a closed chamber. Even if the processing chamber 3 is an open chamber with the left and right sides open, it is sufficient if the pressure is positive with respect to the external pressure. It is sufficient if there is no import into 3. Furthermore, the processing chamber 3 may be closed and in a negative pressure state such as a vacuum state.
[0026] さらに、該半導体薄膜加熱処理は単に半導体薄膜 2の結晶化のみならず、半導体 薄膜 2への CVDまたは PVDによる膜形成や酸化雰囲気下での酸化膜成長処理、あ るいはエッチング処理ゃ洗净処理あるいは乾燥処理などにも適用できる事は 、うま でもなぐ加熱温度は常温以上の半導体薄膜 2の融点程度まで (シリコン薄膜の場合 は 1300°C程度迄)の処理温度に適宣に設定しても良 、事も 、うまでもな!/、。 [0026] Further, the semiconductor thin film heat treatment is not limited to crystallization of the semiconductor thin film 2, but film formation on the semiconductor thin film 2 by CVD or PVD, oxide film growth treatment in an oxidizing atmosphere, or etching treatment. It can also be applied to washing or drying treatments. However, the heating temperature may be appropriately set to a processing temperature up to the melting point of the semiconductor thin film 2 at room temperature or higher (up to about 1300 ° C in the case of a silicon thin film).
[0027] さらに、走査処理 7の本来の目的は走査加熱であるので、被処理基板の走査のみ ならず、高周波電磁波を半導体薄膜 2の表面に沿ってコイル 4を走査しても良い。  Furthermore, since the original purpose of the scanning process 7 is scanning heating, the coil 4 may be scanned along the surface of the semiconductor thin film 2 not only by scanning the substrate to be processed but also by high-frequency electromagnetic waves.
[0028] 図 2は図 1における、本発明の一実施例を示す半導体薄膜の電磁誘導加熱法のコ ィル 4部の平面模式図であって、平坦な矩形状のコイル 4に高周波電源 5から高周波 が印加される構成を示して ヽる。  [0028] Fig. 2 is a schematic plan view of the four-part coil of the electromagnetic induction heating method for a semiconductor thin film in Fig. 1 showing an embodiment of the present invention. The configuration in which high frequency is applied is shown.
[0029] なお、コイル形状とその配置は必ずしも平坦な矩形状である必要は無ぐ被加熱物 である半導体薄膜 2から離間して半導体薄膜 2に電磁波を効率良く照射できる位置 に配すれば良ぐ上下 2対のコイルを配置するなり被処理物の例えば図 1の半導体 膜 2の断面方向に卷回して配しても良 、。  [0029] It should be noted that the coil shape and its arrangement do not necessarily need to be a flat rectangular shape, and the coil shape and the arrangement may be separated from the semiconductor thin film 2 to be heated and disposed at a position where the semiconductor thin film 2 can be efficiently irradiated with electromagnetic waves. Alternatively, two pairs of upper and lower coils may be arranged, and the object to be processed may be wound, for example, in the cross-sectional direction of the semiconductor film 2 in FIG.
[0030] (実施例 2)図 3は、本発明の他の実施例を示す半導体ウェハの電磁誘導加熱法の 主要部の模式図であって、図 3ではシリコン 'ウェハなど力も成る半導体ウェハ 8を石 英などから成り所定の雰囲気と所定の圧力に調整された処理室 3内に設置された石 英など力も成る絶縁支持台 9上に導入して積載し、半導体ウェハ 8から離間した位置 には銅線、銅板、銅パイプなど力 成るコイル 4を配し、該コイル 4には高周波電源 5 力 高周波が印加され、コイル 4の隙間からは電磁波 6が放射され、該電磁波 6に誘 導されて半導体ウェハ 8に渦電流が誘起され、半導体ウェハ 8を加熱する。  (Embodiment 2) FIG. 3 is a schematic diagram of the main part of an electromagnetic induction heating method for a semiconductor wafer showing another embodiment of the present invention. In FIG. Is installed on the insulating support base 9 which is installed in the processing chamber 3 which is made of stone, etc., and is adjusted to a predetermined atmosphere and pressure, and is mounted on the insulating support base 9 which is forceful. Has a coil 4 made of copper wire, copper plate, copper pipe, etc., and a high frequency power source 5 force high frequency is applied to the coil 4, and electromagnetic waves 6 are radiated from the gaps of the coils 4 and are induced by the electromagnetic waves 6. As a result, an eddy current is induced in the semiconductor wafer 8 to heat the semiconductor wafer 8.
[0031] さらに、該半導体ウェハ加熱処理は、半導体ウェハ 8への CVDまたは PVDによる膜 形成や酸化雰囲気下での酸化膜成長処理、あるいはエッチング処理や洗浄処理あ るいは乾燥処理などにも適用できる事はいうまでもなぐ加熱温度は常温以上で半導 体ウェハ 8の融点程度以上まで (シリコン 'ウェハの場合は 1300°C程度以上）の処理 温度に適宣に設定しても良 、事も ヽうまでもな!/ヽ。  [0031] Further, the semiconductor wafer heat treatment can be applied to film formation by CVD or PVD on the semiconductor wafer 8, oxide film growth treatment in an oxidizing atmosphere, etching treatment, cleaning treatment, or drying treatment. Needless to say, the heating temperature is normal or higher and the melting temperature of the semiconductor wafer 8 is higher than the melting point (in the case of silicon 'wafer, it is higher than 1300 ° C). It's time to meet! / ヽ.
[0032] 図 4は図 3における、本発明の他の実施例を示す半導体ウェハの電磁誘導加熱法 のコイル 4部の平面模式図であって、平坦な円形状のコイル 4に高周波電源 5から高 周波が印加される構成を示して!/、る。  FIG. 4 is a schematic plan view of the coil 4 part of the electromagnetic induction heating method for a semiconductor wafer in FIG. 3 showing another embodiment of the present invention. Show the configuration where the high frequency is applied!
[0033] なお、コイル形状とその配置は必ずしも平坦な円形状である必要は無ぐ方形状や 矩形状、あるいはそれらの渦巻状など被加熱物である半導体ウェハ 8から離間して 半導体ウェハ 8に電磁波を効率良く照射できる位置に配すれば良ぐ上下 2対のコィ ルを配置するなり被処理物の例えば図 3の半導体ウェハ 8の断面方向に卷回して配 するか半導体ウェハ 8の周辺に周回して配しても良 、。 [0033] It should be noted that the coil shape and its arrangement need not necessarily be a flat circular shape, and are separated from the semiconductor wafer 8 to be heated such as a rectangular shape, a rectangular shape, or a spiral shape thereof. If the semiconductor wafer 8 is arranged at a position where it can efficiently irradiate electromagnetic waves, two pairs of upper and lower coils are arranged, and the object to be processed is arranged by winding in the cross-sectional direction of the semiconductor wafer 8 in FIG. It may be arranged around 8 or so.

Claims

請求の範囲 The scope of the claims
[1] 絶縁基板上に堆積した半導体薄膜を電磁誘導により直接加熱する事を特徴とする 加熱法。  [1] A heating method characterized by directly heating a semiconductor thin film deposited on an insulating substrate by electromagnetic induction.
[2] 請求項 1に記載の絶縁基板上に堆積した半導体薄膜の電磁誘導による直接加熱 法に関し、半導体薄膜表面あるいは半導体薄膜裏面あるいは半導体薄膜表面と裏 面の両面から離間して高周波誘導コイルを配して成る事を特徴とする加熱法。  [2] In the direct heating method of the semiconductor thin film deposited on the insulating substrate according to claim 1 by electromagnetic induction, the high frequency induction coil is separated from the semiconductor thin film surface, the semiconductor thin film back surface, or both surfaces of the semiconductor thin film surface and the back surface. A heating method characterized by being arranged.
[3] 請求項 1および請求項 2に記載の絶縁基板上に堆積した半導体薄膜の電磁誘導 による直接加熱法に関し、電磁場誘導コイルある！ヽは半導体薄膜を堆積した絶縁基 板の何れかを走査する事を特徴とする加熱法。  [3] The electromagnetic field induction coil relates to a direct heating method of the semiconductor thin film deposited on the insulating substrate according to claim 1 and claim 2 by electromagnetic induction!ヽ is a heating method characterized by scanning one of the insulating substrates on which a semiconductor thin film is deposited.
[4] 絶縁支持台上に積載した半導体ウェハを電磁誘導により直接加熱する事を特徴と する加熱法。  [4] A heating method characterized by directly heating a semiconductor wafer loaded on an insulating support base by electromagnetic induction.
[5] 請求項 4に記載の絶縁支持台上に積載した半導体ウェハを電磁誘導による直接加 熱法に関し、半導体ウェハ表面ある!、は半導体ウェハ裏面ある!、は半導体ウェハ表 面と裏面の両面から離間して高周波誘導コイルを配して成る事を特徴とする加熱法。  [5] With respect to the direct heating method by electromagnetic induction of the semiconductor wafer loaded on the insulating support base according to claim 4, there is a surface of the semiconductor wafer !, there is a back surface of the semiconductor wafer !, both surfaces of the semiconductor wafer surface and the back surface. A heating method characterized by comprising a high-frequency induction coil apart from the coil.
PCT/JP2006/302068 2005-03-01 2006-02-07 Semiconductor thin film or electromagnetic induction heating method for semiconductor wafer WO2006092936A1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007638A (en) * 2001-06-21 2003-01-10 June Kim Hyoung Method and apparatus for heat treating semiconductor film on thermally susceptible non-conductive substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007638A (en) * 2001-06-21 2003-01-10 June Kim Hyoung Method and apparatus for heat treating semiconductor film on thermally susceptible non-conductive substrate

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