WO2006085220A3 - A process of imaging a photoresist with multiple antireflective coatings - Google Patents

A process of imaging a photoresist with multiple antireflective coatings Download PDF

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Publication number
WO2006085220A3
WO2006085220A3 PCT/IB2006/000409 IB2006000409W WO2006085220A3 WO 2006085220 A3 WO2006085220 A3 WO 2006085220A3 IB 2006000409 W IB2006000409 W IB 2006000409W WO 2006085220 A3 WO2006085220 A3 WO 2006085220A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
antireflective coatings
imaging
multiple antireflective
stack
Prior art date
Application number
PCT/IB2006/000409
Other languages
French (fr)
Other versions
WO2006085220A2 (en
Inventor
David J Abdallah
Mark O Neisser
Ralph R Dammel
Georg Pawlowski
John Biafore
Andrew R Romano
Wookyu Kim
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/054,723 external-priority patent/US20060177772A1/en
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Priority to JP2007554678A priority Critical patent/JP2008532059A/en
Priority to CN2006800088270A priority patent/CN101142533B/en
Priority to EP06710463A priority patent/EP1849039A2/en
Publication of WO2006085220A2 publication Critical patent/WO2006085220A2/en
Publication of WO2006085220A3 publication Critical patent/WO2006085220A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
PCT/IB2006/000409 2005-02-10 2006-02-09 A process of imaging a photoresist with multiple antireflective coatings WO2006085220A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007554678A JP2008532059A (en) 2005-02-10 2006-02-09 Method for forming an image of a photoresist having multiple antireflection films
CN2006800088270A CN101142533B (en) 2005-02-10 2006-02-09 Process of imaging a photoresist with multiple antireflective coatings
EP06710463A EP1849039A2 (en) 2005-02-10 2006-02-09 A process of imaging a photoresist with multiple antireflective coatings

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/054,723 2005-02-10
US11/054,723 US20060177772A1 (en) 2005-02-10 2005-02-10 Process of imaging a photoresist with multiple antireflective coatings
US11/338,462 US7816071B2 (en) 2005-02-10 2006-01-24 Process of imaging a photoresist with multiple antireflective coatings
US11/338,462 2006-01-24

Publications (2)

Publication Number Publication Date
WO2006085220A2 WO2006085220A2 (en) 2006-08-17
WO2006085220A3 true WO2006085220A3 (en) 2006-11-16

Family

ID=36778078

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/000409 WO2006085220A2 (en) 2005-02-10 2006-02-09 A process of imaging a photoresist with multiple antireflective coatings

Country Status (7)

Country Link
US (1) US7816071B2 (en)
EP (1) EP1849039A2 (en)
JP (1) JP2008532059A (en)
KR (1) KR20070102732A (en)
MY (1) MY143937A (en)
TW (1) TW200700924A (en)
WO (1) WO2006085220A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138536B2 (en) 2008-04-01 2015-09-22 Gambro Lundia Ab Apparatus and a method for monitoring a vascular access

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US20070015082A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Process of making a lithographic structure using antireflective materials
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
US7709178B2 (en) 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
WO2009059031A2 (en) * 2007-10-30 2009-05-07 Brewer Science Inc. Photoimageable branched polymer
US8460770B2 (en) * 2007-11-01 2013-06-11 Dow Global Technologies Llc In situ moisture generation and use of polyfunctional alcohols for crosslinking of silane-functionalized resins
JP4918162B2 (en) * 2008-02-22 2012-04-18 ブルーワー サイエンス アイ エヌ シー． Double layer photosensitive and developer-soluble bottom antireflective coating for 193nm lithography
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090274974A1 (en) * 2008-04-30 2009-11-05 David Abdallah Spin-on graded k silicon antireflective coating
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100151392A1 (en) * 2008-12-11 2010-06-17 Rahman M Dalil Antireflective coating compositions
JP2010156819A (en) * 2008-12-26 2010-07-15 Toshiba Corp Semiconductor device manufacturing method
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) * 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8108805B2 (en) * 2010-03-26 2012-01-31 Tokyo Electron Limited Simplified micro-bridging and roughness analysis
KR101301464B1 (en) * 2011-04-26 2013-08-29 금호석유화학 주식회사 Copolymer for organic antireflective layer, monomer and composition comprising the copolymer
JP6346161B2 (en) * 2015-12-15 2018-06-20 株式会社東芝 Pattern formation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216026A1 (en) * 2002-05-15 2003-11-20 Institute Of Microelectronics Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6393260B1 (en) * 1998-04-17 2002-05-21 Nokia Mobile Phones Limited Method for attenuating spurious signals and receiver
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
EP1016930A1 (en) 1998-12-28 2000-07-05 Infineon Technologies North America Corp. Bottom antireflective layer operating in destructive interference and absorption modes
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6331379B1 (en) 1999-09-01 2001-12-18 Micron Technology, Inc. Photo-lithography process using multiple anti-reflective coatings
US6346361B1 (en) 1999-10-06 2002-02-12 Clariant Finance (Bvi) Limited Method for synthesizing polymeric AZO dyes
US6303260B1 (en) 2000-03-31 2001-10-16 Microchem Corp. Dissolution rate modifiers for lift-off resists
US6379014B1 (en) 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
KR100349680B1 (en) * 2000-08-31 2002-08-24 주식회사 하이닉스반도체 Method for forming dual damascene interconnection
US6605394B2 (en) * 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
US6844131B2 (en) * 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
JP4796498B2 (en) 2003-05-23 2011-10-19 ダウ コーニング コーポレーション Siloxane resin anti-reflective coating composition with high wet etch rate
JP4220361B2 (en) * 2003-07-17 2009-02-04 信越化学工業株式会社 Photoresist underlayer film forming material and pattern forming method
US7175966B2 (en) * 2003-09-19 2007-02-13 International Business Machines Corporation Water and aqueous base soluble antireflective coating/hardmask materials
JP4252872B2 (en) * 2003-10-06 2009-04-08 信越化学工業株式会社 Resist underlayer film material and pattern forming method
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
JP4355643B2 (en) * 2004-10-26 2009-11-04 信越化学工業株式会社 Resist underlayer film material and pattern forming method
WO2006059452A1 (en) * 2004-12-03 2006-06-08 Nissan Chemical Industries, Ltd. Method for forming photoresist pattern using double layer antireflection film
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP2007049026A (en) 2005-08-11 2007-02-22 Renesas Technology Corp Method and material for forming micropattern
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216026A1 (en) * 2002-05-15 2003-11-20 Institute Of Microelectronics Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DAMMEL R R ET AL: "193 NM IMMERSION LITHOGRAPHY - TAKING THE PLUNGE", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, CHIBA, JP, vol. 17, no. 4, 2004, pages 587 - 602, XP008051455, ISSN: 0914-9244 *
KAWATA H ET AL: "OPTICAL PROJECTION LITHOGRAPHY USING LENSES WITH NUMERICAL APERTURES GREATER THAN UNITY", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 9, no. 1 - 4, 1 May 1989 (1989-05-01), pages 31 - 36, XP000034346, ISSN: 0167-9317 *
LINLIU K ET AL: "Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-[mu]m KrF lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4000, 2000, pages 982 - 993, XP002394894, ISSN: 0277-786X *
MEADOR J D ET AL: "New materials for 193-nm trilayer imaging", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 5376, no. 1, 2004, pages 1138 - 1148, XP002394895, ISSN: 0277-786X *
MUKHERJEE-ROY M ET AL: "A DUAL BARC METHOD FOR LITHOGRAPHY AND ETCH FOR DUAL DAMASCENE WITH LOW K", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 42, no. 5A, PART 1, May 2003 (2003-05-01), pages 2649 - 2653, XP001192254, ISSN: 0021-4922 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138536B2 (en) 2008-04-01 2015-09-22 Gambro Lundia Ab Apparatus and a method for monitoring a vascular access

Also Published As

Publication number Publication date
WO2006085220A2 (en) 2006-08-17
EP1849039A2 (en) 2007-10-31
MY143937A (en) 2011-07-29
US20060177774A1 (en) 2006-08-10
KR20070102732A (en) 2007-10-19
JP2008532059A (en) 2008-08-14
US7816071B2 (en) 2010-10-19
TW200700924A (en) 2007-01-01

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