WO2006083929A3 - A physical vapor deposition plasma reactor with rf source power applied to the target - Google Patents

A physical vapor deposition plasma reactor with rf source power applied to the target Download PDF

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Publication number
WO2006083929A3
WO2006083929A3 PCT/US2006/003495 US2006003495W WO2006083929A3 WO 2006083929 A3 WO2006083929 A3 WO 2006083929A3 US 2006003495 W US2006003495 W US 2006003495W WO 2006083929 A3 WO2006083929 A3 WO 2006083929A3
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
target
chamber
sputter target
source power
Prior art date
Application number
PCT/US2006/003495
Other languages
French (fr)
Other versions
WO2006083929A2 (en
Inventor
Karl M Brown
John Pipitone
Vineet Mehta
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/052,011 external-priority patent/US7399943B2/en
Priority claimed from US11/222,245 external-priority patent/US20060169584A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020067022388A priority Critical patent/KR101239776B1/en
Priority to CN2006800001830A priority patent/CN101124350B/en
Priority to KR1020137005582A priority patent/KR101376671B1/en
Priority to KR1020127025547A priority patent/KR101284799B1/en
Publication of WO2006083929A2 publication Critical patent/WO2006083929A2/en
Publication of WO2006083929A3 publication Critical patent/WO2006083929A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A physical vapor deposition reactor includes a vacuum chamber (10) including a sidewall, a ceiling and a wafer support pedestal (14 near a floor of the chamber, a vacuum pump (30) coupled to the chamber, a process gas inlet (26) coupled to the chamber and a process gas source (28) coupled to the process gas inlet. A metal sputter target (18) is located at the ceiling and a high voltage D.C. source (24) coupled to the sputter target (18). An RF plasma source power generator (88) is coupled to the metal sputter target (18) and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal (14) comprises an electrostatic chuck and an RF plasma bias power (38) generator is coupled to the wafer support pedestal (14) having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod (86) having a diameter in excess of about 0.5 inches engages the metal sputter target (18), the RF feed rod (86) extending axially above the target (18) through the ceiling and being coupled to the RF plasma source power generator (88).
PCT/US2006/003495 2005-02-03 2006-01-30 A physical vapor deposition plasma reactor with rf source power applied to the target WO2006083929A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020067022388A KR101239776B1 (en) 2005-02-03 2006-01-30 A physical vapor deposition plasma reactor with rf source power applied to the target
CN2006800001830A CN101124350B (en) 2005-02-03 2006-01-30 A physical vapor deposition plasma reactor with RF source power applied to the target
KR1020137005582A KR101376671B1 (en) 2005-02-03 2006-01-30 physical vapor deposition reactor
KR1020127025547A KR101284799B1 (en) 2005-02-03 2006-01-30 Method for plasma-enhanced physical vapor deposition of metal with rf source power applied to the target

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/052,011 US7399943B2 (en) 2004-10-05 2005-02-03 Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US11/052,011 2005-02-03
US11/222,245 US20060169584A1 (en) 2005-02-03 2005-09-07 Physical vapor deposition plasma reactor with RF source power applied to the target
US11/222,245 2005-09-07

Publications (2)

Publication Number Publication Date
WO2006083929A2 WO2006083929A2 (en) 2006-08-10
WO2006083929A3 true WO2006083929A3 (en) 2007-03-29

Family

ID=36777859

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/003495 WO2006083929A2 (en) 2005-02-03 2006-01-30 A physical vapor deposition plasma reactor with rf source power applied to the target

Country Status (2)

Country Link
KR (1) KR101239776B1 (en)
WO (1) WO2006083929A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115128A2 (en) 2009-04-03 2010-10-07 Applied Materials, Inc. High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process
US9194045B2 (en) * 2012-04-03 2015-11-24 Novellus Systems, Inc. Continuous plasma and RF bias to regulate damage in a substrate processing system
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
JP6647202B2 (en) * 2013-12-06 2020-02-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Deposition arrangement, deposition device, and method of operation thereof

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681227A (en) * 1970-06-29 1972-08-01 Corning Glass Works Microcircuit mask and method
US4714536A (en) * 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US4874494A (en) * 1986-06-06 1989-10-17 Tadahiro Ohmi Semiconductor manufacturing apparatus
US5110438A (en) * 1988-01-13 1992-05-05 Tadahiro Ohmi Reduced pressure surface treatment apparatus
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5362672A (en) * 1988-06-17 1994-11-08 Tadahiro Ohmi Method of forming a monocrystalline film having a closed loop step portion on the substrate
US5728278A (en) * 1990-11-29 1998-03-17 Canon Kabushiki Kaisha/Applied Materials Japan Inc. Plasma processing apparatus
US5976327A (en) * 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6283357B1 (en) * 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US6458252B1 (en) * 1999-11-18 2002-10-01 Tokyo Electron Limited High target utilization magnetic arrangement for a truncated conical sputtering target

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681227A (en) * 1970-06-29 1972-08-01 Corning Glass Works Microcircuit mask and method
US4714536A (en) * 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US4874494A (en) * 1986-06-06 1989-10-17 Tadahiro Ohmi Semiconductor manufacturing apparatus
US5110438A (en) * 1988-01-13 1992-05-05 Tadahiro Ohmi Reduced pressure surface treatment apparatus
US5362672A (en) * 1988-06-17 1994-11-08 Tadahiro Ohmi Method of forming a monocrystalline film having a closed loop step portion on the substrate
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5728278A (en) * 1990-11-29 1998-03-17 Canon Kabushiki Kaisha/Applied Materials Japan Inc. Plasma processing apparatus
US5976327A (en) * 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6283357B1 (en) * 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US6458252B1 (en) * 1999-11-18 2002-10-01 Tokyo Electron Limited High target utilization magnetic arrangement for a truncated conical sputtering target

Also Published As

Publication number Publication date
KR20070097298A (en) 2007-10-04
WO2006083929A2 (en) 2006-08-10
KR101239776B1 (en) 2013-03-06

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