WO2006081234A3 - Ruthenium layer deposition apparatus and method - Google Patents

Ruthenium layer deposition apparatus and method Download PDF

Info

Publication number
WO2006081234A3
WO2006081234A3 PCT/US2006/002461 US2006002461W WO2006081234A3 WO 2006081234 A3 WO2006081234 A3 WO 2006081234A3 US 2006002461 W US2006002461 W US 2006002461W WO 2006081234 A3 WO2006081234 A3 WO 2006081234A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ruthenium
ruthenium tetroxide
tetroxide
containing layer
Prior art date
Application number
PCT/US2006/002461
Other languages
French (fr)
Other versions
WO2006081234A2 (en
Inventor
Timothy W Weidman
Original Assignee
Applied Materials Inc
Timothy W Weidman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/228,649 external-priority patent/US7438949B2/en
Priority claimed from US11/228,425 external-priority patent/US20060162658A1/en
Application filed by Applied Materials Inc, Timothy W Weidman filed Critical Applied Materials Inc
Priority to JP2007553170A priority Critical patent/JP5043684B2/en
Priority to EP06733844A priority patent/EP1853745A2/en
Publication of WO2006081234A2 publication Critical patent/WO2006081234A2/en
Publication of WO2006081234A3 publication Critical patent/WO2006081234A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Catalysts (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Embodiments of the invention provide apparatus and methods for forming a ruthenium-containing layer on a substrate (422) from a ruthenium tetroxide containing gas. Generally, the method includes exposing a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the substrate and subsequently filling device structures on the substrate by at least one deposition process. In one embodiment, the ruthenium containing layer is formed on a substrate by creating ruthenium tetroxide in an external vessel (631) and then delivering the generated ruthenium tetroxide gas to a temperature controlled substrate positioned within a processing chamber (404). In another embodiment, a ruthenium containing layer is formed on a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from a ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the substrate.
PCT/US2006/002461 2005-01-27 2006-01-25 Ruthenium layer deposition apparatus and method WO2006081234A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007553170A JP5043684B2 (en) 2005-01-27 2006-01-25 Ruthenium layer deposition apparatus and method
EP06733844A EP1853745A2 (en) 2005-01-27 2006-01-25 Ruthenium layer deposition apparatus and method

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US64800405P 2005-01-27 2005-01-27
US60/648,004 2005-01-27
US71502405P 2005-09-08 2005-09-08
US60/715,024 2005-09-08
US11/228,649 2005-09-15
US11/228,649 US7438949B2 (en) 2005-01-27 2005-09-15 Ruthenium containing layer deposition method
US11/228,425 2005-09-15
US11/228,425 US20060162658A1 (en) 2005-01-27 2005-09-15 Ruthenium layer deposition apparatus and method

Publications (2)

Publication Number Publication Date
WO2006081234A2 WO2006081234A2 (en) 2006-08-03
WO2006081234A3 true WO2006081234A3 (en) 2009-05-07

Family

ID=36740999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/002461 WO2006081234A2 (en) 2005-01-27 2006-01-25 Ruthenium layer deposition apparatus and method

Country Status (5)

Country Link
EP (1) EP1853745A2 (en)
JP (1) JP5043684B2 (en)
KR (1) KR101014240B1 (en)
TW (1) TWI349717B (en)
WO (1) WO2006081234A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070160756A1 (en) * 2006-01-07 2007-07-12 Helmuth Treichel Apparatus and method for the deposition of ruthenium containing films
US8906501B2 (en) * 2007-10-05 2014-12-09 The United States Of America As Represented By The Secretary Of The Navy RuO2 coatings
JP5520425B2 (en) * 2009-01-10 2014-06-11 宛伶 兪 Method for forming a metal bump and seal of a semiconductor member
US8076241B2 (en) * 2009-09-30 2011-12-13 Tokyo Electron Limited Methods for multi-step copper plating on a continuous ruthenium film in recessed features
US20130269612A1 (en) * 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
US9328419B2 (en) * 2012-04-18 2016-05-03 Hermes-Epitek Corporation Gas treatment apparatus with surrounding spray curtains
US9040385B2 (en) 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
KR20200070318A (en) * 2017-10-12 2020-06-17 젤리스트 테크놀로지스, 인코퍼레이티드 Method and system for integrated synthesis, delivery and treatment of source chemicals for thin film manufacturing
TWI790320B (en) * 2017-12-16 2023-01-21 美商應用材料股份有限公司 Selective atomic layer deposition of ruthenium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5989345A (en) * 1997-05-02 1999-11-23 Tokyo Electron Limited Process-gas supply apparatus
US20020064420A1 (en) * 2000-11-29 2002-05-30 Wen-Pin Lin Tubular connector
US20050045099A1 (en) * 2003-08-27 2005-03-03 Applied Materials, Inc. Methods and devices to reduce defects in dielectric stack structures
US20050081787A1 (en) * 2003-10-15 2005-04-21 Ki-Vin Im Apparatus and method for supplying a source, and method of depositing an atomic layer using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111644A (en) * 1997-09-30 1999-04-23 Japan Pionics Co Ltd Vaporization supplying equipment
JP2000034563A (en) * 1998-07-14 2000-02-02 Japan Energy Corp Production of highly pure ruthenium sputtering target and highly pure ruthenium sputtering target
US6458183B1 (en) * 1999-09-07 2002-10-01 Colonial Metals, Inc. Method for purifying ruthenium and related processes
KR100406534B1 (en) * 2001-05-03 2003-11-20 주식회사 하이닉스반도체 Method for fabricating ruthenium thin film
JP3990881B2 (en) * 2001-07-23 2007-10-17 株式会社日立製作所 Semiconductor manufacturing apparatus and cleaning method thereof
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5989345A (en) * 1997-05-02 1999-11-23 Tokyo Electron Limited Process-gas supply apparatus
US20020064420A1 (en) * 2000-11-29 2002-05-30 Wen-Pin Lin Tubular connector
US20050045099A1 (en) * 2003-08-27 2005-03-03 Applied Materials, Inc. Methods and devices to reduce defects in dielectric stack structures
US20050081787A1 (en) * 2003-10-15 2005-04-21 Ki-Vin Im Apparatus and method for supplying a source, and method of depositing an atomic layer using the same

Also Published As

Publication number Publication date
WO2006081234A2 (en) 2006-08-03
JP2008538796A (en) 2008-11-06
KR20070101357A (en) 2007-10-16
TWI349717B (en) 2011-10-01
EP1853745A2 (en) 2007-11-14
TW200702474A (en) 2007-01-16
JP5043684B2 (en) 2012-10-10
KR101014240B1 (en) 2011-02-16

Similar Documents

Publication Publication Date Title
WO2006081234A3 (en) Ruthenium layer deposition apparatus and method
US20080314418A1 (en) Method and System for Furnace Cleaning
CN110050328A (en) Semiconductor processing equipment
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
EP1347506A4 (en) Semiconductor device and its manufacturing method
WO2012018375A3 (en) Plasma mediated ashing processes
WO2006113451A3 (en) Ammonia-based hydrogen generation apparatus and method for using same
WO2005110626A3 (en) Process and apparatus for plasma coating, substrates coated by this metod or apparatus
TW200604022A (en) A method of manufacturing a nozzle plate
WO2004107414A3 (en) Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
WO2006057709A8 (en) Method for deposition of metal layers from metal carbonyl precursors
WO2007024720A3 (en) Pretreatment processes within a batch ald reactor
CN103119695A (en) Plasma-activated deposition of conformal films
EP1596446A3 (en) Apparatus and method for producing an electronic component comprising at least one active organic layer
SG158086A1 (en) Electrode array device having an adsorbed porous reaction layer
CY1108484T1 (en) METHOD FOR EXPOSURE OF SILICON
WO2006104819A3 (en) A method and system for removing an oxide from a substrate
WO2007040701A3 (en) Method for controlling the step coverage
WO2008088300A3 (en) Selective etching of oxides from substrates
WO2005038873A3 (en) System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
WO2004109772A3 (en) Method and system for etching a high-k dielectric material
SG10201808148QA (en) Method of manufacturing semiconductor device, substrate processing apparatus and program
DK2268846T3 (en) Method for stable hydrophilic amplification of a substrate by atmospheric pressure plasma discharge
EP1193331A3 (en) Chemical vapor deposition apparatus and chemical vapor deposition method
TW200943412A (en) Method of manufacturing a semiconductor device and a device for treating substrate

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007553170

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020077019546

Country of ref document: KR

Ref document number: 2006733844

Country of ref document: EP