WO2006077600A2

WO2006077600A2 - A micro-machined magnetic switch

Info

Publication number: WO2006077600A2
Application number: PCT/IL2006/000095
Authority: WO
Inventors: Amikam Nemirovsky; Elena Sidorov; Shmuel Kaldor; Claudio Jakobson; Shai Feldman
Original assignee: Bluebird Optical Mems Ltd.
Priority date: 2005-01-24
Filing date: 2006-01-24
Publication date: 2006-07-27
Also published as: WO2006077600A3

Abstract

A micro-machined magnetic switch that operates under a magnetic force to close. A single-pole single-touch (SPST) implementation as well as a single-pole double-touch (SPDT) are shown. The micro-machined switch is designed to allow for enhanced magnetic flux, for achieving higher magnetic switching force, while maintaining the flexibility of the moving beam of the switch. In particular the moving beam provides for separate spring like action on one magnetic flux path and an additional, relatively significant, magnetic flux on another path, such that both of the fluxes contribute to the switching force. In one embodiment of the disclosed invention an oversized ferromagnetic magnetic flux collector(144), which is monolithically produced with a flexible beam (142) and is made by deposition of a ferromagnetic material, is used to direct the magnetic flux, for the purpose of providing sufficient force to enable the moving beam's motion for the purpose of closing an electrical path.

Description

A MICRO-MACHINED MAGNETIC SWITCH

FIELD OF THE INVENTION

The present invention relates generally to micro-electro-mechanical system (MEMS) devices, forming micro-magnetic switches and sensors, and more specifically to magnetically actuated MEMS switches and sensors.

BACKGROUND OF THE INVENTION

It is known in the art of switches, sensors and relays and further developments in semiconductor and micromachining manufacturing, that micromachining allows for the implementation of micro switches, micro sensors and micro relays. Such micro switches may move from an OFF to an ON position and vice versa, in a variety of ways.

In one form of such integrated micro switches the motion of the flexible beam is caused by the application of a magnetic field. Generally, there exists a demand for a micro switch, or a micro sensor, to be sensitive enough so as to being capable of operating under weak magnetic fields. As a result of the magnetic field, a force is extended on the flexible beam, causing it to move and thereby establish a connection, e.g.. an electrical connection. Using micromachining technologies allows for both the miniaturization and reliability of such devices. The design of the flexible beam poses special challenges. The beam has to be flexible enough to allow for sufficient motion to create contact while under a predetermined magnetic field. The flexible beam has further to be durable enough to sustain a large number of back and forth motions without performance degradation and being capable of applying sufficient force such that contact is sustained. However, the flexible beam must be stiff enough to disengage the contact, i.e. overcome sticktion or electrostatic force, so that disengagement actually occurs when the magnetic field is removed.

In the prior art, the entire, magnetic flux, that provides the force causing motion towards contact, passes through the flexible ferromagnetic beam. While such prior art benefits from simplicity of design and manufacture process resulting in a minimal number of building materials and processing steps, they suffer from conflicting design requirements, since collecting sufficient magnetic flux requires increased geometrical dimensions of the beam, that in turn increase its stiffness and practically sets a limit on the achievable sensitivity of the device. Hill et al. in US patent 6,366, 186 suggest a micro-magnetic switch structure to overcome such limitations. However, the structure suggested suffers from several drawbacks, including an additional processing step of constructing a ferromagnetic element on a spring-like element, where the spring-like element does not contribute to drawing of additional magnetic flux to increase the device sensitivity, as well as requiring two gaps to be closed in order to establish contact.

In view of the limitations of the prior art it would be advantageous to provide a design of a micro switch, based on a minimal number of processing steps and in particular having a microstructure, monolithically including a flexible beam, such that the microstructure is capable of collecting significant magnetic flux while essentially not degrading the mechanical properties of the flexible beam. It would be further beneficial if such design would provide a solution for other applications, where both high sensitivity and simple design and manufacture process are essential.

SUMMARY OF THE INVENTION

Accordingly, it is a principal object of the present invention to overcome the disadvantages of the prior art and provide an electromagnetic or magnetic switch, intended to be actuated by weak external magnetic fields, the switch having at least a U- shaped structure, comprising a flexible beam and a magnetic flux collection arm (MFCA.). The flexible arm is designed to provide for the motion capabilities and spring properties associated with the switch, while the MFCA is designed to attract more of the magnetic tlux lines, thereby enhancing the force applied on the U-shaped structure for the purpose of establishing electrical contact. In accordance with a preferred embodiment of the present invention, there is provided a single-pole single-touch (SPST) switch manufactured using micro-machining technology the switch comprising: a non-ferromagnetic substrate having at least a cavity; a contact mass formed over the substrate, the contact mass made by deposition of at least ferromagnetic and electrically conductive material; and, an anchor mass formed over the substrate, the' anchor mass made by deposition of at least a ferromagnetic and electrically conductive material, the anchor mass being electrically isolated from the contact mass, the anchor mass comprising at least a base, a U-shaped structure extending entirely over the cavity and being spaced apart from the contact mass by a gap, the U-shaped structure further comprising a magnetic flux collection arm (MFCA) and a flexible beam, the flexible beam being connected at a first edge to the base of the anchor mass and further connected at a second edge of the flexible beam to a first edge of the MFCA, wherein a second edge of the MFCA is spaced apart from the base of the anchor means by a gap.

An important feature of the disclosed invention is that the entire switch structure may be produced monolithically, by deposition, on a substrate.

Additional features and advantages of the invention will become apparent from the following drawings and description.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the invention with regard to the embodiments thereof, reference is made to the accompanying drawings, in which like numerals designate corresponding elements or sections throughout, and in which:

Fig. I A is an exemplary two-beam-redundancy SPST micro-machined switch;

Fig. 1 B is a cross section of the micro-machined switch with two-beam-redundancy taken along section lines A-A of Fig. IA;

Fig. 2 is an exemplary embodiment of an SPDT micro-machined switch; Fig. 3 is an exemplary embodiment of an SPST micro-machined switch with two moving beams making contact;

Fig. 4 is an exemplary embodiment of an SPST micro-machined switch with a single moving beam making contact, and

Fig. 5 is an alternative embodiment of an exemplary SPST micro-machined switch.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention discloses a magnetic switch, manufactured using micro-machining technologies, on a planar non-ferromagnetic substrate, for example, a silicon substrate. For the purpose of the discussion herein, the term "switch" includes, but is not limited to, a micro-switch. A cavity that may or may not penetrate through the substrate is formed in the substrate, for example, by dry or wet etching processes. Over the substrate there is suspended a switching structure comprising of static parts and movable parts, particularly, a moving beam. The cavity may be formed either prior to or after the creation of the switching structure. The moving beam may be formed of one or more flexible beams, or beam structures (e.g., folded beams), and generally referred to hereinafter as a ''flexible beam'' or as ''flexible beams" as may be appropriate.

The entire switching structure is made by deposition of an electrically conducting ferromagnetic material, for example, an alloy of nickel and iron. The switching structure comprises two parts that are electrically isolated from at least each other: an anchor mass and a contact mass. The anchor mass is comprised of a base and a structure having a general U-shape. The base of the anchor mass is at least partially attached to the substrate, and the U-shaped structure extends over the cavity and hence free to bend laterally. One arm of the U-shaped structure is a flexible beam, referred to hereinafter as the flexible beam, which is connected on one side to the base of the anchor mass, and is designed to bend towards the contact mass.

The other arm of the U-shaped structure, referred hereinafter as the magnetic flux collection arm (MFCA), may be significantly wider than the flexible beam and is connected only to the flexible beam, i.e., the other end of the MFCA does not come in contact with the base of the anchor mass. Depending on the required performance, the MFCA may be significantly shorter than the flexible beam. Moreover, the thicknesses of different parts of. the anchor mass, as measured from the substrate surface, may differ from each other.

For example, the base of the anchor mass and the contact mass may be thicker than the U-shaped structure. The mechanical design of the U-shaped structure is such that the flexible beam is the only element capable of mechanical bending, or mechanical deformation, as all other parts comprising the U-shaped structure are designed to be practically mechanically rigid.

The MFCA is designed for collecting additional and generally significantly larger magnetic flux, than the magnetic flux collected by the flexible beam itself. The U-shaped structure is positioned such that upon the application of a magnetic field having appropriate strength and direction, a magnetic force causes the flexible beam to bend towards the contact mass, and upon contact providing an electrical path from the base of the anchor mass to the contact mass, through the flexible beam, thus establishing the ON position of the. switch. In the absence of a magnetic field the flexible beam and the entire U-shape structure return to their initial position, which provides for a gap between the U- shaped structure and the contact mass, maintaining the switch in an OFF position.

The MFCA of the U-shaped structure is designed to collect magnetic flux in addition to the flux passing through the flexible arm itself, such that both paths of flux unite at the zone connecting the two arms of the U-shaped structure. Thus the magnetic flux that generates the magnetic force, and hence the mechanical moment that forces the flexible beam to bend towards the contact mass can be significantly increased. The MFCA has a gap to the anchor mass that is designed to become smaller while the flexible beam bends towards the contact mass, but the designed gap is such that a gap remains even when contact is established between the U-shaped structure and the contact mass.

Reference is now made to Fig. IA where an exemplary and non-limiting two- beam-redundancy single-pole single-touch (SPST) micro-machined switch 100, is shown. Substrate 1 1 0 has a cavity 1 15 formed therein. In one embodiment of this invention the ^' cavity penetrates (not shown) through substrate 1 10. For clarity purposes Fig. I B shows a cross section A-A of switch 100, where among others, cavity 1 15 in substrate 1 10, is further shown. Substrate 1 1 0 is non-ferromagnetic and comprises, for example, of silicon.

The switching structure itself is made by deposition of an electrically conductive and ferromagnetic material formed on top of substrate 1 10, and includes an anchor mass 120 and a contact mass 130, as described in more general terms above. Contact mass 130 and anchor mass 120 are electrically isolated, as long as no magnetic field is applied on switch 100. Anchor mass 120 further comprises a base 141 and a U-shaped structure 140. The U-shaped structure comprises a flexible beam 142 and a magnetic flux collection arm (MFCA) 144. Further shown in Fig. I A is a gap 1 17 between MFCA 144 and the base 141 of anchor mass 120, and a gap 1 16 between the U-shaped structure and contact mass 130.

Flexible beam 142 and MFCA 144 are designed such that upon the application of a magnetic field in the right direction and having sufficient strength, both flexible beam 142 and. in particular, MFCA 144, collect magnetic flux lines that are either attracted by anchor mass 120, or directly collected by the MFCA and the flexible beam. Part of the magnetic flux collected by anchor mass 120 passes through gap 1 17 to MFCA 144. Another part of the magnetic flux collected by anchor mass 120 is further collected by flexible beam 142. Magnetic flux from both flexible beam 142 and MFCA 144 then concentrate at the zone of the U-shaped structure where MFCA 144 connects with flexible beam 142, where the collective magnetic flux passes further through gap 1 16, and then further penetrates into contact mass 130.

It is well known in the art that such a pattern of magnetic flux lines results with two attractive magnetic forces, one of which acts to close gap 1 16 while the other acts to close gap 1 17. Both of these magnetic forces cause a bending mechanical moment acting on flexible beam 142, where both moments act to bend flexible beam 142 towards contact mass 130, up- to establishing physical contact between U-shaped structure 140 and contact mass 130. In the design shown in Fig. IA the explanation herein is equally applicable for the second U-shaped structure of switch 100.

In the specific embodiment described in Fig. IA the only role of the second U- shaped structure is to increase reliability through redundancy. The U-shaped structure is designed such that upon the application of an appropriate outer magnetic field, the bending moment acting on flexible beam 142 causes sufficient bending to establish physical contact between contact mass 130 and U-shaped structure 140. The design of the U-shaped structure 140, gap 1 16 and gap 1 17 is such, that even though the width of gap 1 1 7 decreases while the bending of flexible arm 142 takes place, gap 1 17 remains and avoids contact between MFCA 144 and the base 141 of anchor mass 120, even when gap 1 16 essentially vanishes, when physical contact between contact mass 130 and U-shaped structure 140 is established.

Upon establishing contact between U-shaped structure 140 and contact mass 130, an electrical conducting path is established from anchor mass ' 120 through U-shaped structure 140 to base 141 of contact mass 130. By connecting conducting leads (not shown), for example through the application of well known metal layers formed to create electrical connections, a circuit containing switch 100 is formed. Both U-shaped structures 140 will close their respective gaps to contact mass 130 upon the application of a magnetic field B in the appropriate direction.

A magnetic field in a direction perpendicular to that, needs to be, in general, much stronger in order to cause sufficient force to actuate at least one of the U-shaped 140 structures towards contact mass 130.

In one embodiment of the disclosed invention a wide MFCA 144 is designed to provide maximal magnetic flux by extending its cross section coverage with anchor mass 120, such that the area closer to anchor mass 120 is significantly wider than the area towards the curving portion of U-shaped beam 140. The face of contact mass 130 and corresponding areas of U-shaped structures 140 are designed to provide for appropriate surface at contact areas, necessary for efficient electrical current flow. Such surface contacts areas may be further coated with materials, for example rhodium, iridium or ruthenium, to provide for better conductivity and durability and to avoid stiction of contacts that may prevents them from detaching once the magnetic field B is removed. The entire device may be placed in a sealed environment for the purpose of preventing environmental damages to switch 100. A person skilled in the art would note that either of the base 141 of anchor mass 120 and contact mass 130 may partially extend over cavity 1 15.

Referring to Fig. 2, an exemplary and non-limiting single-pole double-touch (SPDT) micro-machined switch 200 is shown. There are two U-shaped structures 240 and 245 that are made at least by deposition of a ferromagnetic and electrically conducting material, placed over cavities 21 1 and 21 5 respectively, the cavities being created in a non-ferromagnetic substrate 210, the substrate 210 made for example from silicon. The ferromagnetic material may be, for example, an alloy of nickel and iron. U- shaped structures 240 and 245 extend from the base 241 of anchor mass 220 over cavities 2 1 1 and 2 15 respectively. Each of U-shaped structures 240 and 245 is capable of making contact with a respective contact mass 230 and 235 respectively, each of contact masses 230 and 235 is made by deposition of a ferromagnetic and electrically conducting materials. U-shaped structures 240 and 245 are designed to be perpendicular to each other.

Therefore, a magnetic field B_x of appropriate strength and direction that would cause the U-shaped structure of one switch, for example U-shaped structure 240, to move towards and make contact with its respective contact mass, for example contact mass 230, will not have enough impact on the other U-shaped structure, for example U-shaped structure 245, that therefore will not make contact with its respective contact mass 235. Similarly, a magnetic field B_y, perpendicular to B_x and having similar strength, would cause contact between U-shaped structure 245 and its respective contact mass 235, but would not cause contact between U-shaped structure 240 and its respective contact mass 230.

Hence, upon the application of either one of two appropriate magnetic fields, an electrical path will be either established between the base 241 of anchor mass 220, flexible beam of U-shaped structure 240 and contact mass 230, or alternatively, between the base 241 of anchor mass 220, flexible beam of U-shaped beam 245 and contact mass 235, depending on the direction of the magnetic field, B_x or B_y respectively. A sufficiently strong magnetic field, having another direction, may activate both contacts. Thus, depending on the desired application, micro-switch 200 may be activated as a SPDT switch by separately applying one of two magnetic fields that are appropriately selective in direction and strength.

Alternatively and depending on other desired applications, micro-switch 200 may be activated by a magnetic field having a direction of, for example, 45 degrees to both B_x and B_y> such that both contacts may be simultaneously closed. Contact areas may be coated with conductive material, for example rhodium, to provide for better conductivity and durability and to avoid stiction. The entire device may be placed in a sealed environment for the purpose of preventing environmental damages to switch 200. It is note worthy that the designs of gaps 212 and 213, as well as gaps 216 and 217, should take into account the same consideration and function as described for gaps 1 16 and 1 17 respectively, above. In each of the U-shaped structures 240 and 245 respectively, there is a flexible beam and a MFCA, having the same function as described for flexible beam 142 and MFCA 144 above, and having essentially the same design considerations.

In another embodiment of switch 200, contact masses 230 and 235 are connected io each other, either electrically or both electrically and magnetically. In this case switch 200 would operate as a SPST device with redundancy, which would be of particular use when the directionality of the magnetic field applied on the device cannot be guaranteed but it is still essential to ensure positive contact regardless of the direction of the magnetic flux. It should be further noted that cavities 21 1 and 215 may be formed as a single cavity without departing from the scope of the disclosed invention. A person skilled in the art would note that either of the base 241 of anchor mass 220, contact mass 230 and contact mass 235 may partially extend over their respective cavities 21 1 and 215.

Reference is now made to Fig. 3 where an exemplary embodiment of an SPST micro-machined switch 300 is shown with two U-shaped structures, intended for establishing contact between the two U-shaped structures upon applying an appropriate magnetic field. The switch 300 is formed on a non-ferromagnetic substrate 310 having a cavity 3 15 formed therein. Cavity 315 may, in one embodiment of this invention, penetrate through substrate 310. An anchor mass 320, formed over substrate 310, is comprised of a U-shaped structure 325 entirely extending over cavity 315, and a base 323 which may partially extend over cavity 315. Anchor mass 320 is formed by deposition of a ferromagnetic and electrically conducting material. A similar anchor mass 330 structure, preferably symmetrical to 320, is also formed by deposition of an electrically conductive and ferromagnetic material. Anchor mass 330 is comprised of a U-shaped structure 335 entirely extended over cavity 315, and a base 333 which may partially extend over cavity 315.

In the absence of an appropriate magnetic field, the two anchor masses are electrically isolated from each other. Each one of the two U-shaped structures 325 and 335 has a flexible beam and a MFCA. The flexible beams are mechanically designed such that upon the application of an appropriate magnetic field, U-shaped structures 325 and 335 move towards each other until gap 316 between them becomes essentially closed, so that physical contact between them is achieved and an electrically conducting path is established between anchor mass 320 and anchor mass 330, through U-shaped structure 325 and U-shaped structure 335. Because of the spring-like nature of the two flexible beams, removal of the magnetic field causes the two U-shaped structures to return to their initial rest positions, so that the electrical connection between the two anchor masses ceases to exist.

Design considerations for the flexible beams of U-shaped structures 325 and 335 are essentially the same as for flexible beam 142 described above. The MFCAs of U- shaped structures 325 and 335, respectively, are designed to allow for significant additional magnetic flux collection. The design considerations for the MFCAs of U- shaped structures 325 and 335 are essentially the same as for MFCA 144 described above. The function of gap 316 is essentially the same as that of gap 1 16 described in more detail above, and the function of gaps 317 is essentially the same as that of gap 1 17 described in more detail above.

When an appropriate magnetic field is applied, magnetic flux collected by bases 323 and 333 of anchor masses 320 and 330, respectively, flow into MFCAs 325 and 335 through gaps 317 and a portion of flux flows through flexible beams 325 and 335. Most of the sum of those fluxes concentrate at gap 316, causing an attractive magnetic torce between U-shaped structures 325 and 335, and eventually bending flexible beams of both U-shaped structures until gap 316 essentially closes and physical contact is established between the two U-shaped structures.

The advantage of using two U-shaped structures is that each of them has to move only half the distance to achieve contact, thus enabling, at certain situations, the use of weaker magnetic fields for actuation. The faces of the contact areas of the U-shaped structures 325 and 335, respectively, should be designed to provide for appropriate surface at contact areas, necessary for efficient electrical current flow. Such surface contact areas may be further coated with appropriate materials, for example rhodium, to provide for better contacts durability and to avoid stiction. The majority of the magnetic flux is directed through base 323 of anchor mass 320, gap 317, MFCA of U-shaped structure 325, gap 316 while open, and thereafter when essentially closed, MFCA of U- shaped structure 335, 'gap 317 and base 333 of anchor mass 330. The entire device may be placed in a sealed environment for the purpose of preventing environmental damages to switch 300.

In Fig. 4, another exemplary and non-limiting embodiment of SPST micro- machined switch 400 is shown with a single U-shaped structure 440 for making contact with a contact mass 430. On top of a non-ferromagnetic substrate 410, made for example of silicon, and further having a cavity 415 formed therein, there are formed a contact mass 430 and an anchor mass 420, Anchor mass 420 comprises a U-shaped structure 440 entirely extended over cavity 415, and a base 441 which may partially extend over cavity 415. The base 441 of anchor mass 420, U-shaped structure 440, and contact mass 430 are all formed by deposition of a ferromagnetic and electrically conducting materials.

In the absence of an appropriate magnetic field, anchor mass 420 and contact mass 430 are electrically isolated from each other. U-shaped structure 440 comprises a flexible beam and a MFCA. The design considerations for the flexible beam of U-shaped structure 440 are essentially the same as those for flexible beam 142 described in more detail above. The design considerations for MFCA of U-shaped structure 440 are essentially the same as those for MFCA 144 described in more detail above.

Upon the application of a magnetic field having appropriate direction and strength, U-shaped structure 440 experiences the effects of a magnetic force that forces the flexible beam of U-shaped structure 440, and hence the entire U-shaped structure 440, to move towards contact mass 430, eventually closing gap 41 6 and establishing physical contact between U-shaped structure 440 and contact mass 430. Upon establishing physical contact, an electrical conducting path is made available between base 441 of anchor mass 420 and contact mass 430, through U-shaped structure 440. The contact areas may be further coated with appropriate materials, for example rhodium, to provide for better contacts durability and to avoid stiction.

Upon applying an appropriate magnetic field, magnetic flux is directed through anchor mass 420, gap 417, MFCA of U-shaped structure 440, gap 416 while open and thereafter when essentially-closed, and contact mass 430. Additional magnetic flux flows between base 441 of anchor mass 420 and contact mass 430, through the flexible beam of U-shaped structure 440, and contributes as well to the magnetic force that attracts U- shaped structure 440 towards contact mass 430. The entire device may be hermetically sealed in inert environment for the purpose of preventing environmental damages to switch 400.

In Fig. 5, another embodiment of the disclosed invention, is shown, where an L- shaped extension 546 is formed of the same material and together with the U-shaped structure, effectively forming a W-shaped structure. The L-shaped extension allows for the collection of additional magnetic flux and therefore improves the performance of the disclosed invention. The L-shaped extension may be added to any one of the U-shaped structures disclosed herein.

The invention disclosed herein pertains to an electromagnetic or magnetic switch, intended to be actuated by weak external magnetic Fields, the switch having at least a U- shaped structure, comprising a flexible beam and a MFCA. The flexible arm is designed to provide for the motion capabilities and spring properties associated with the switch, while the MFCA is designed to collect more magnetic flux than is actually possible to collect with the flexible beam itself, because of limitations imposed by the mechanical flexibility requirements. By over-sizing the portion of the MFCA, and particularly that portion close to the anchor mass, it is possible to attract into the MFCA more of the magnetic flux lines, thereby enhancing the force applied on the U-shaped structure for the purpose of establishing electrical contact.

It is to be understood that the invention is not to be limited to the specific embodiments disclosed and that modifications and other embodiments are intended to be included within the scope of the appended claims.

Claims

CLAIMS:

1 . A single-pole single-touch (SPST) switch manufactured using micro-machining technology, said switch comprising:

a non-ferromagnetic substrate having at least a cavity;

a contact mass formed over said substrate, said contact mass made by deposition of at least ferromagnetic and electrically conductive material; and.

an anchor mass formed over said substrate, said anchor mass made by deposition of at least a ferromagnetic and electrically conductive material, said anchor mass being electrically isolated from said contact mass, said anchor mass comprising ' at least a base, a U-shaped structure extending entirely over said cavity and being spaced apart from said contact mass by a gap, said U-shaped structure further comprising a magnetic flux collection arm (MFCA) and a flexible beam, said flexible beam being connected at a first edge of said flexible beam to said base of said anchor mass and further connected at a second edge of said flexible beam to a first edge of said MFCA, wherein a second edge of said MFCA is spaced apart from said base of said anchor means by a gap.

2. The switch of claim 1 , wherein at least one of said base of said contact mass and said anchor mass extends partially over said cavity.

3. The switch of claim 1 , wherein upon applying an appropriate external magnetic field said U-shaped structure is forced to move towards said contact mass up to establishing physical contact with said contact mass.

4. The switch of claim 3, wherein upon removal of said external magnetic field the spring property of said flexible beam causes said U-shaped structure to disconnect from said contact mass.

5. The switch of claim 3, wherein upon reaching physical contact between said U- shaped structure and said contact mass, an electrical conducting path is established from said base of said anchor mass, through said U-shape structure, up to said contact mass.

6. The switch of claim 1 , wherein the respective areas of contact of said contact mass and said U-shaped structure are coated with conducting durable material.

7. The switch of claim 6, wherein said conducting material is at least one of: rhodium, • iridium, ruthenium.

8. The switch of claim 1 , wherein said MFCA is capable of collecting significantly more magnetic tlux than said flexible beam.

9. The switch of claim 1, wherein the edge of said MFCA is designed to be significantly wider in at least the area closest to said anchor mass and facing the gap to said anchor mass, in comparison to at least one of: said flexible beam, width of said MFCA at the contact area with said flexible beam.

10. The switch of claim 1 , wherein an L-shaped extension is formed together with said . U-shaped structure, effectively forming a W-shaped structure, said L-shaped extension being further capable of collecting additional magnetic flux.

1 1. A single-pole single-touch (SPST) switch manufactured using micro-machining technology, said switch comprising:

a non-ferromagnetic substrate having at least a cavity;

a first anchor mass formed over said substrate, said first anchor mass made by deposition of at least a ferromagnetic and electrically conductive material, said first anchor mass comprising at least a first U-shaped structure extending entirely over said cavity and a first base, wherein said first U-shaped structure further comprises a first magnetic flux collection arm (MFCA) and a first flexible beam, said first flexible beam being connected at a first edge of said first flexible beam to said first base of said first anchor mass, and further connected at a second edge of said first flexible beam to a First edge of said first MFCA, wherein the second edge of said first MFCA is spaced apart from said first base of said first anchor means by a first gap;

a second anchor mass formed over said substrate and electrically isolated from said first anchor mass, said second anchor mass made by deposition of at least a ferromagnetic and electrically conductive material, said second anchor mass comprising a second base, a second U-shaped structure extending entirely over said cavity, wherein said second U-shaped structure further comprises a second MFCA and a second flexible beam, said second flexible beam being connected at a first edge of said second flexible beam to said second base of said second anchor mass, and further connected at a second edge of said second flexible beam to a first edge of said second MFCA, wherein the second edge of said second MFCA is spaced apart from said second base of said second anchor mass by a second gap, and wherein said first U-shaped structure and said second U-shaped structure are partially facing each other and further having a gap between them, causing said first U-shaped structure and said second U-shaped structure to be electrically isolated from each other.

1 2. The switch of claim 1 1 , wherein at least one of said first base and said second base partially extends over said cavity.

13. The switch of claim 1 1, wherein upon the application of an external appropriate magnetic field, at least said first U-Shaped structures is forced to move towards said second U-shaped structure, up to essentially eliminating said gap between them and establishing a physical contact between them.

14. The switch of claim 13, wherein upon removal of said external magnetic field at least said first U-shaped structure disconnects from said second U-shaped structure,

15. The switch of claim 1 1 , wherein upon the application of an external appropriate magnetic Field, at least said second U-shaped structure is forced to move towards said First U-shaped structure, up to essentially eliminating said gap between them and establishing a physical contact between them.

16. The switch of claim 1 5, wherein upon removal of said external magnetic Field at least said second U-shaped structure disconnects from said First U-shaped structure.

17. The switch of claim 1 1, wherein upon reaching physical contact between said First U-shaped structure and said second U-shaped structure, an electrical conducting path is established from said First base, through said first U-shaped structure and said second U-shaped structure, to said second base.

18. The switch of claim 1 1, wherein the respective areas of contact between said First U-shaped structure and said second U-shaped structure, are coated with conducting durable material.

19. The switch oF claim 1 8, wherein said conducting material is at least one of: rhodium, iridium, ruthenium.

20. The switch of claim 1 1 , wherein said First MFCA is capable of collecting signiFicantly more magnetic flux than said First flexible beam.

21 . The switch of claim 1 1 , wherein said second MFCA is capable of collecting significantly more magnetic flux than said second flexible beam.

22. The switch of claim 18, wherein the edge of said first MFCA is designed to be significantly wider in at least the area closest to said first anchor mass in comparison to at least one of: said first flexible beam, width of said first MFCA at the connection area with said first flexible beam.

23. The switch of claim 1 8, wherein the edge of said second MFCA is designed to be significantly wider in at least the area closest to said second anchor mass in comparison to at least one of: said second flexible beam, width of said second MFCA at the connection area with said second flexible beam.

24. The .-.witch of claim 1 1 , wherein an L-shaped extension is formed together with said U-shaped structure, effectively forming a W-shaped structure, said L-shaped extension being further capable of collecting additional magnetic flux.

25. A single-pole double-touch (SPDT) switch manufactured using micro-machining technology, said switch comprising:

a non-ferromagnetic substrate having at least a cavity;

a first contact mass formed over said substrate, said first contact mass made by deposition of at least a ferromagnetic and electrically conducing material;

a second contact mass formed over said substrate, said second contact mass being electrically isolated from said first contact mass and made by deposition of at least a ferromagnetic and electrically conducting material;

an anchor mass formed over said substrate, said anchor mass made of at least a ferromagnetic and electrically conducting material, said anchor mass being electrically isolated from both said first contact mass and said second contact mass, said anchor mass further comprising a base and a first U-shaped structure and a second U-shaped structure positioned at an angle with respect to each other, each U-shaped structure extending entirely over said cavity and each comprising a magnetic flux collection arm (MFCA) and a flexible beam, said flexible beam being connected, at a First edge of said flexible beam, to said base and further connected at a second edge of said flexible beam to a First edge of said MFCA, wherein the second edge of said MFCA maintains itself spaced apart from said base by a gap and wherein the MFCA of said first U-shaped structure is designed to collect mainly magnetic flux of a First magnetic Field and the MFCA of said second U- shaped structure is designed to collect mainly magnetic flux of a second magnetic field.

26. The switch of claim 25, wherein at least one of said First contact mass, said second contact mass and said base of said anchor mass, partially extends over said cavity.

27. The switch of claim 25, wherein upon applying said first magnetic Field said First U- shaped structure is forced to move towards said First contact mass up to establishing physical contact with said First contact mass.

28. The switch of claim 27, wherein upon reaching contact between said First U-shaped structure and said First contact mass, an electrical conducting path is established from said base of said anchor mass, through said First U-shaped structure to said First contact mass.

29. The switch of claim 28, wherein upon application of said First magnetic Field said second U-shaped structure maintains an electrically isolating gap between said second U-shaped structure and said second contact mass.

30. The switch of claim 28, wherein upon removal of said First magnetic Field the spring property of the flexible beam of said First U-shaped structure causes said First U- shaped structure to disconnect from said First contact mass.

3 1 . The switch of claim 25, wherein upon applying said second magnetic field said second U-shaped structure is forced to move towards said second contact mass up to establishing physical contact with said second contact mass.

32. The switch of claim 31 , wherein upon reaching contact between said second U- shaped structure and said second contact mass, an electrically conducting path is established from said base of said anchor mass, through said second U-shaped structure to said second contact mass.

33. ^'I he .switch of claim 32, wherein upon application of said second magnetic field said firsi U-shaped structure maintains an electrically isolating gap between said first U- shaped structure and said first contact mass.

34. The switch of claim 33, wherein upon removal of said second magnetic field the spring property of the flexible beam of said second U-shaped structure causes said second U-shaped structure to disconnect from said second contact mass.

35. The switch of claim 25, wherein said first magnetic field and said second magnetic field are perpendicular to each other.

36. The switch of claim 25, wherein the areas of contact are coated with a conducting material in at least one of: said first U-shaped structure and said respective first contact mass, and said second U-shaped structure and said respective second contact mass.

37. The switch of claim 36, wherein said conducting material is at least one of: rhodium, iridium, ruthenium.

38. The switch of claim 25, wherein said first contact mass and said second contact mass are at least electrically connected.

39. The switch of claim 25, wherein said first contact mass and said second contact mass are formed as a single contact mass having two contact areas.

40. The switch of claim 25, wherein an L-shaped extension is formed together with said U-shaped structure, effectively forming a W-shaped structure, said L-shaped extension being further capable of collecting additional magnetic flux.

41 . A method for forming a magnetic switch using micro-machining technologies, said method including at least the steps of:

forming a contact mass and an anchor mass over a substrate by deposition of at least a ferromagnetic and electrically conductive material, wherein said anchor mass is electrically isolated from at least said contact mass, and further comprising at least a base and a U-shaped structure, said U-shaped structure further comprising a magnetic flux collection arm (MFCA) and a flexible beam, said flexible beam being connected at a first edge of said flexible beam to said base of said anchor mass and further connected at a second edge of said flexible beam to the first edge of said MFCA, wherein the second edge of said MFCA is spaced apart from said base of said anchor mass by a gap; and

forming a cavity in said substrate, wherein said U-shaped structure entirely extends over said cavity.

42. The method of claim 41 , wherein said method further comprises the step of:

forming a contact mass over said substrate by deposition of at least a ferromagnetic and electrically conductive material, wherein said contact mass is electrically isolated from at least said anchor mass, and further spaced apart from said U- shaped structure by a gap .

43. The method of claim 42, wherein said contact mass extends partially over said cavity.

44. The method of claim 41 , wherein said base of said anchor mass partially extends over said cavity.

45. The method of claim - 41 , wherein said method further comprises the step of:

forming an L-shaped extension together with said U-shaped structure, effectively forming a W-shaped structure, said L-shaped extension being further capable of collecting additional magnetic flux.