WO2006036080A1 - Circuit integre sans contacts - Google Patents

Circuit integre sans contacts Download PDF

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Publication number
WO2006036080A1
WO2006036080A1 PCT/RU2004/000339 RU2004000339W WO2006036080A1 WO 2006036080 A1 WO2006036080 A1 WO 2006036080A1 RU 2004000339 W RU2004000339 W RU 2004000339W WO 2006036080 A1 WO2006036080 A1 WO 2006036080A1
Authority
WO
WIPO (PCT)
Prior art keywords
information
photovoltaic
light
semiconductor
optically active
Prior art date
Application number
PCT/RU2004/000339
Other languages
English (en)
Russian (ru)
Inventor
Valery Arkadievich Konyavsky
Vladimir Iosifovich Livshits
Original Assignee
Zakrytoe Aktsionernoe Obschestvo 'osoboe Konstruktorskoe Byuro Sistem Abtomatizirovannogo Proektirovaniya'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zakrytoe Aktsionernoe Obschestvo 'osoboe Konstruktorskoe Byuro Sistem Abtomatizirovannogo Proektirovaniya' filed Critical Zakrytoe Aktsionernoe Obschestvo 'osoboe Konstruktorskoe Byuro Sistem Abtomatizirovannogo Proektirovaniya'
Priority to PCT/RU2004/000339 priority Critical patent/WO2006036080A1/fr
Publication of WO2006036080A1 publication Critical patent/WO2006036080A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
    • G06K19/0707—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement being capable of collecting energy from external energy sources, e.g. thermocouples, vibration, electromagnetic radiation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/06009—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code with optically detectable marking
    • G06K19/06046—Constructional details
    • G06K19/06112—Constructional details the marking being simulated using a light source, e.g. a barcode shown on a display or a laser beam with time-varying intensity profile
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
    • G06K7/10158—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves methods and means used by the interrogation device for reliably powering the wireless record carriers using an electromagnetic interrogation field
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to electronic technical means of informatization and is a functional analogue of contactless radio frequency identifiers used in the hardware of electronic document management and information protection.
  • Non-contact type identifiers favorably distinguishes from devices of a similar purpose with electrical contacts (for example, Touch Methor type) the possibility of remote activation, which, combined with their lightness and small thickness, makes it most efficient, according to reports, to solve such an extremely relevant and socially significant problem, as a prevention of unauthorized access and "copying" copying information recorded on replicated optical media (CD and DVD).
  • Contactless identifiers are widely used and are commercially available by a number of companies (see, for example, [I]). They contain a central part for storing and processing input information according to a given program, made on a substrate of semiconductor material, and a peripheral part for communicating through the electromagnetic radiation of the central part with an external device supplying it, inputting and outputting information according to a given protocol .
  • the central part therefore, is a semiconductor (monolithic) integrated circuit.
  • the peripheral part made for communication at radio frequencies in the form of a flat coil, whose characteristic dimensions are three to four orders of magnitude higher than the characteristic dimensions of planar structures of the central part, not allowing it to form on a common substrate with
  • the central part can only be a film (or foil) microcircuit.
  • a film (or foil) microcircuit is a hybrid contactless integrated microcircuit (BIMS), which in principle does not allow, in the radio frequency version, a much more technically and cost-effective monolithic design.
  • BIMS hybrid contactless integrated microcircuit
  • radio frequencies provide obvious advantages for the main areas of application of contactless identifiers (smart cards, electronic travel documents, etc.), the main one being the possibility of activation at an arbitrary position of the identifier with respect to an external device within the zone with sizes of the order of 100 mm or more.
  • the key point is the monophysical nature of the access channels (both for recording and reading) to encoded content that is located on the working field of the disk and therefore available, as well as attributive (identifying and necessary for decoding) information, access to which
  • the problem is solved in that in the BIMS containing a central part, designed to store and process input information according to a given program, made on a substrate of semiconductor material, and a peripheral part, designed for contactless communication through electromagnetic radiation of the central part with an external device carrying out its power, input and output of information according to a given protocol, the peripheral part contains at least one photovoltaic structure, etc. forming incident on it the electromagnetic radiation of optical range (light) into electric energy, connected to the central portion by the input of energy and information, and at least two are connected by the voltage controlled display information optically active structures modulating light radiation reflected by them.
  • the information exchange protocol corresponds to at least a single scan by a focused external device generated and modulated, in accordance with the inputted information, by a light beam of photovoltaic and optically active structures located along its path with
  • An external device refers to a playback device for recording optical media in CD-DVD (CD-R, CD-RW / DVD-R, DVD-RW) formats, the optical head of which contains a semiconductor laser whose radiation is modulated in recording, and a photodetector that detects reflected radiation in the playback mode. Scanning is performed when the disk is rotated with a “SIMS” implanted into it a SIMS drive of the drive relative to its optical head.
  • SIMS SIMS
  • All elements of the central and peripheral parts of such a BIMS can be located on a common substrate of a semiconductor material, for example, silicon.
  • a semiconductor material for example, silicon.
  • This option corresponds to the simplest and most economical monolithic design, which is recommended for use as “implanted” in the identifier optical discs.
  • the disk material itself is used, under which it is located (along with the recording medium).
  • the SIMS is located on a common substrate made of a combined material, which includes layers of a semiconductor and an optically transparent dielectric, for example, a silicon-on-sapphire epitaxial structure.
  • the SIMS is accessed from the side opposite to the planar structures of the central part, through a solid and absolutely impermeable to moisture transparent dielectric substrate, on which the photovoltaic and optically active elements are formed using thin-film technology on the surface areas freed from the semiconductor.
  • the other side of the substrate, on which the central part of the BIMS is located may have blind protection and be turned into the carrier of an opaque, for example, metal frame.
  • At least one element of the peripheral part of the SIMS can be located on a coating substrate of an optically transparent dielectric that coincides in size with the semiconductor substrate, hermetically connected to the first so that together they form a hybrid sandwich structure, all of whose functional elements are concentrated in the internal layers.
  • the advantage of hybrid SIMS is the ability to perform their optically active structures and other bulk elements.
  • FIG. 1 schematically depicts a typical example of the topology of the main (monolithic) variant of BIMS, intended for use as a contactless identifier in the composition of optical information carriers.
  • Zone 2 is located under an optically opaque protective layer 4, eliminating the parasitic photoelectric effect, which can unpredictably affect the logical states of in-circuit elements of the SIMS and erase the information recorded in the registers of its non-volatile memory.
  • Zone 3 is a strip stretched along the scan line AB (circular arc, concentric recording tracks), on which the functional as well as auxiliary elements of the peripheral part are concentrated.
  • initial marker strokes 5 include (in the order of exposure by the laser beam during scanning): initial marker strokes 5, first photovoltaic structure 6, intermediate marker strokes (in particular, one stroke) 7, optically active structures 8 (in the amount corresponding to the number of binary digits with a checksum displayed in one scan cycle), the second photovoltaic structure 9 and the final marker strokes 10.
  • All marker strokes which are light reflecting local sections of conductor (in particular, aluminum) metallization are auxiliary elements of the peripheral part, ensuring synchronization of the central part of the BIMS with the electrical circuit of an external device (electronic part of the drive).
  • the first (main) photovoltaic structure 6 is a photovoltaic converter, similar in structure to a solar cell and electrically equivalent to a photodiode, or their battery, operating in photovoltaic mode. It is located along the AB scan line and is isotropic for the time corresponding to its exposure by the optical head of the drive, sufficient to input and process a binary number with the number
  • the optically active structures 8 are located across this line, each of which is a dashed familiarity that changes (within two discrete states, corresponding to the logical levels “0” and “1”) parameters of the light reflected by it, depending on the level of applied voltage.
  • the type of modulation provided in this way can consist not only in a direct change in the brightness of the reflected light (amplitude modulation, absorption / reflection), but also in rotation by a predetermined angle of the plane of its polarization.
  • the choice of the optimal type of modulation is determined by many factors related both to the design features of the optical drive head and to the issues of the most appropriate implementation of the optically active structures themselves 8.
  • the latter contain at least two elements: as a rule, a reflective control electrode (“mirror”), corresponding to the configuration of the dashed familiarity, and the optically active transparent dielectric medium (it can be common to all structures) located in the electric field of the control electric Yes, and significantly changing its optical parameters depending on the electric field strength in it.
  • a reflective control electrode (“mirror”)
  • the optically active transparent dielectric medium it can be common to all structures located in the electric field of the control electric Yes, and significantly changing its optical parameters depending on the electric field strength in it.
  • At least one electrode with zero potential, usually optically transparent must also be present in the whole or set of optically active structures, either explicitly or implicitly.
  • optically active structures are their implementation in the form of a microminiature analogue of a conventional liquid crystal display, the electrodes of which are located directly on the silicon substrate.
  • An optically active medium - a nematic or cholesteric liquid crystal (LC) material - is located on top of the electrodes in the form of a layer of a given thickness and can cover the entire front surface of the SIMS, since it does not interfere with the operation of photovoltaic structures and is chemically neutral with respect to semiconductor devices.
  • LC cholesteric liquid crystal
  • An optically transparent common electrode is deposited in the form of a film on the bottom of the recess in the material, under which the SIMS is located, the thickness of the LCD material layer being determined by the height of the support pads inside the recess (its excess is extruded to the surface when the SIMS is installed), and contacts with the common electrode are made through these are the supporting platforms.
  • the design characterized by these features has the features of a hybrid, since one element of the peripheral part - a common optically transparent electrode - is placed on a separate dielectric substrate, and the SIMS as a whole is a sandwich structure, all of whose functional elements are located in the inner layers.
  • Replacement sheet The cavities are filled with FFA and an optically transparent common indium-tin oxide electrode is deposited on top of it.
  • This option obviously, eliminates the need for the formation of bulk optically active structures with a transparent electrode placed on a separate substrate, and removes all the problems associated with its attachment to the SIMS, the creation of seals and providing the specified thickness of the LCD material.
  • auxiliary photovoltaic structure 9 of a dashed configuration, which serves to send a service pulse to the central part of the SIMS, indicating the end of the scanning procedure for optically active structures. Since the latter are equivalent to electric capacitances capable of remembering the levels of voltages applied to them during the “active period”, of the voltages generated by the central part during the passage of the main photovoltaic structure 6, the completion of each current scan cycle must be accompanied by a command for their forced reset, as well as preparation of the central parts to the conclusion of the next group of binary digits provided by the protocol for the exchange of information for the next scan cycle. It is the “memory effect" inherent in
  • Replacement sheet voltage-controlled optically active structures makes it possible to work in which the supply voltage is cut off before information is output, which happens in this embodiment.
  • photovoltaic structures in particular, can be made in the form of highly efficient multi-junction elements on V-grooves [3], and
  • Replacement sheet optically active structures have transparent electrodes, for example, of indium tin oxide, deposited on the bottom of the cavities made in silicon to the sapphire surface, and optically active medium in these cavities to the outer silicon surface, which is the plane of arrangement of the control electrodes.
  • the structure can have a multilayer protection, ensuring its complete tightness.
  • Hybrid design also provides interesting possibilities, in which the dimensions of the semiconductor and coating dielectric substrates coincide. As the latter, it is advisable to use a sapphire wafer (similar to that used for KHC) of the same diameter as silicon.
  • the groups of elements of the peripheral part made on it are arranged with a step similar to the step of arranging the central parts of the SIMS on a silicon wafer. This allows them to be grouped together into sandwich structures immediately for all SIMSs on wafers (tens and hundreds). Finished devices can be obtained by cutting such a hybrid plate, for example, diamond discs.
  • BIMS placed in the material of the optical disk so that its zone 2 is located in the central technological field of the disk, and zone 3 - at the level of the first tracks available for recording / playback, moves, during the rotation of the disk, relative to the optical head of the drive along the path described by the line AB.
  • the photodetector of the head perceives the first code sequence of pulses programmed by the widths of these strokes and the distances between them so that it
  • Replacement sheet transfers the electronic circuit of the drive to the beginning of the dialogue mode with the identifier.
  • the “field of view” of the optical head appears at the beginning of the first photovoltaic structure 6, the exposure of which by modulated laser radiation leads to the supply to the central part of the SIMS both the supply voltage and the pulse sequence generated by the drive corresponding to the information entered when requesting the identifier.
  • the selection of information pulses against the background of the constant component of the brightness of the radiation, which provides a SIMS supply voltage, can be carried out in the simplest way using the Zener diode structure (zener diode) available in the central part of the SIMS, if the information pulses are peak brightness values with respect to its initial value.
  • the transit time of the first photovoltaic structure by the optical head should be sufficient to complete the entire cycle of input and processing of information for a given program.
  • the drive circuit If the identifier is programmed, which consists in changing the contents of the registers of its non-volatile memory, the drive circuit generates a special code that puts the SIMS into standby mode, in which the code sequences that came through the photovoltaic structure 6 in the next scan cycles are used as programming ones. Then, after a predetermined number of disk revolutions, sufficient to complete programming, after a period, the BIMS is automatically or by a special command transferred to the operation mode described below.
  • the identifier response is given in the form displayed by the state of its optically active structures 8, which is formed during the active period corresponding to the presence of the supply voltage during
  • the electronic circuit of the drive must first be prepared for reading this information, for which intermediate marker strokes 7 are used. Since the photovoltaic structure 6 almost completely absorbs the laser radiation incident on it, for this, in principle, one stroke is sufficient, during which the optical head passes it the photodetector registers a distinct impulse.
  • the pulses coming further from the optically active structures 8 in the reflective state are perceived by the electronic circuitry of the drive as informational, which are written into its special registers and analyzed for compliance with their code sequence with the checksum displayed by the state of the last group (usually four) of structures 8 If the analysis is positive, the scan cycle is considered completed, otherwise it repeats.
  • the reset of the optically active structures 8 is carried out, as described above, by a pulse formed by the second photovoltaic structure 9, after which the peripheral part of the SIMS is prepared for the next scan cycle.
  • the readiness of the drive electronic circuit is ensured by the second code sequence of pulses resulting from the reflection of light from the group of final marker strokes 10.
  • the total number of scan cycles performed with a positive result during one request corresponds to the information exchange protocol between the identifier and the drive.
  • Replacement sheet skipping a few revolutions between the supply of control voltages to them and reading the information displayed by their state, as well as between their reset and the start of the next scan cycle.
  • the difference between the levels of the mirror layer of the optical disk deposited on its surface and the SIMS structures immersed in the volume of its material can be compensated by lens (facet) structures molded on the outer side of the disk opposite to SIMS.

Abstract

L'invention s'utilise dans des moyens techniques électroniques d'informatisation. Selon l'invention, un circuit intégré sans contacts est un analogue fonctionnel d'identificateurs RFID utilisés dans des équipements de protection de la circulation de documents électroniques et de protection des informations. Selon l'invention, une partie périphérique du circuit intégré sans contacts, destinée à la communication sans contacts au moyen du rayonnement électromagnétique de la partie centrale avec le dispositif extérieur qui assure son alimentation, l'entrée et la sortie des informations s'effectuant selon un protocole prédéterminé, comprend au moins une structure semi-conductrice photovoltaïque qui convertit le rayonnement électromagnétique dans la gamme optique (la lumière) tombant sur le circuit intégré, qui est connectée à la partie centrale du circuit intégré sans contacts du côté de l'entrée de l'énergie et des informations. Du côté de la sortie des informations, on a ménagé au moins deux structures commandées, pilotées par la tension qui module le rayonnement optique réfléchi. Le protocole d'échange d'informations correspond au moins à un balayage unique par un faisceau lumineux, modulé et focalisé selon les informations introduites, des structures photovoltaïques optiquement actives disposées sur son trajet, avec détection du rayonnement réfléchi par ces dernières. L'invention permet de créer un circuit intégré sans contacts qui permet de réduire au minimum les changements nécessaires de la structure des lecteurs de disques et de leurs unités électroniques.
PCT/RU2004/000339 2004-09-02 2004-09-02 Circuit integre sans contacts WO2006036080A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/RU2004/000339 WO2006036080A1 (fr) 2004-09-02 2004-09-02 Circuit integre sans contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2004/000339 WO2006036080A1 (fr) 2004-09-02 2004-09-02 Circuit integre sans contacts

Publications (1)

Publication Number Publication Date
WO2006036080A1 true WO2006036080A1 (fr) 2006-04-06

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU652829A1 (ru) * 1976-08-03 1980-03-15 Ордена Ленина Физико-Технический Институт Им. А.Ф.Иоффе Полупроводниковый преобразователь
RU2095851C1 (ru) * 1994-06-14 1997-11-10 Михаил Анатольевич ЧЕХОНИН Способ ввода информации в устройство с памятью и обработки вводимой информации
US5875450A (en) * 1996-02-05 1999-02-23 Siemens Aktiengesellschaft Device for processing and storing data received from either a contactless interface or an interface having contacts
DE19855596A1 (de) * 1998-12-02 2000-06-29 Orga Consult Gmbh Tragbarer mikroprozessorgestützter Datenträger, der sowohl kontaktbehaftet als auch kontaktlos betreibbar ist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU652829A1 (ru) * 1976-08-03 1980-03-15 Ордена Ленина Физико-Технический Институт Им. А.Ф.Иоффе Полупроводниковый преобразователь
RU2095851C1 (ru) * 1994-06-14 1997-11-10 Михаил Анатольевич ЧЕХОНИН Способ ввода информации в устройство с памятью и обработки вводимой информации
US5875450A (en) * 1996-02-05 1999-02-23 Siemens Aktiengesellschaft Device for processing and storing data received from either a contactless interface or an interface having contacts
DE19855596A1 (de) * 1998-12-02 2000-06-29 Orga Consult Gmbh Tragbarer mikroprozessorgestützter Datenträger, der sowohl kontaktbehaftet als auch kontaktlos betreibbar ist

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