WO2006029250A2 - Process and fabrication methods for emitter wrap through back contact solar cells - Google Patents
Process and fabrication methods for emitter wrap through back contact solar cells Download PDFInfo
- Publication number
- WO2006029250A2 WO2006029250A2 PCT/US2005/031949 US2005031949W WO2006029250A2 WO 2006029250 A2 WO2006029250 A2 WO 2006029250A2 US 2005031949 W US2005031949 W US 2005031949W WO 2006029250 A2 WO2006029250 A2 WO 2006029250A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diffusion
- contact
- rear surface
- solar cell
- metal
- Prior art date
Links
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- 239000010703 silicon Substances 0.000 description 34
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2005282372A AU2005282372A1 (en) | 2004-09-07 | 2005-09-07 | Process and fabrication methods for emitter wrap through back contact solar cells |
JP2007530493A JP2008512858A (en) | 2004-09-07 | 2005-09-07 | Manufacturing process and manufacturing method of emitter wrap through back contact solar cell |
EP05794874A EP1834346A4 (en) | 2004-09-07 | 2005-09-07 | Process and fabrication methods for emitter wrap through back contact solar cells |
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60798404P | 2004-09-07 | 2004-09-07 | |
US60/607,984 | 2004-09-07 | ||
US11/050,182 | 2005-02-03 | ||
US11,050/184 | 2005-02-03 | ||
US11/050,184 US20050172996A1 (en) | 2004-02-05 | 2005-02-03 | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US11,050,185 | 2005-02-03 | ||
US11/050,182 US7335555B2 (en) | 2004-02-05 | 2005-02-03 | Buried-contact solar cells with self-doping contacts |
US11/050,185 US7144751B2 (en) | 2004-02-05 | 2005-02-03 | Back-contact solar cells and methods for fabrication |
US70764805P | 2005-08-11 | 2005-08-11 | |
US60/707,648 | 2005-08-11 | ||
US11/220,927 | 2005-09-06 | ||
US11/220,927 US20060060238A1 (en) | 2004-02-05 | 2005-09-06 | Process and fabrication methods for emitter wrap through back contact solar cells |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2006029250A2 true WO2006029250A2 (en) | 2006-03-16 |
WO2006029250A3 WO2006029250A3 (en) | 2006-11-09 |
WO2006029250A8 WO2006029250A8 (en) | 2007-04-05 |
Family
ID=36036992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/031949 WO2006029250A2 (en) | 2004-09-07 | 2005-09-07 | Process and fabrication methods for emitter wrap through back contact solar cells |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060060238A1 (en) |
EP (1) | EP1834346A4 (en) |
JP (1) | JP2008512858A (en) |
KR (1) | KR20070107660A (en) |
AU (1) | AU2005282372A1 (en) |
WO (1) | WO2006029250A2 (en) |
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WO2007140763A2 (en) * | 2006-06-10 | 2007-12-13 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Single-sided contact solar cell with plated-through holes and method for producing it |
WO2008107156A2 (en) * | 2007-03-08 | 2008-09-12 | Schmid Technology Systems Gmbh | Method for producing a solar cell and solar cell produced using said method |
WO2009028287A1 (en) * | 2007-08-31 | 2009-03-05 | Sharp Kabushiki Kaisha | Photoelectric conversion element, photoelectric conversion element connecting body and photoelectric conversion module |
WO2009063754A1 (en) * | 2007-11-12 | 2009-05-22 | Sharp Kabushiki Kaisha | Photoelectric conversion element and method for manufacturing the same |
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JP2010505262A (en) * | 2006-09-29 | 2010-02-18 | リニューアブル・エナジー・コーポレーション・エーエスエー | Back contact solar cell |
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WO2011054915A1 (en) * | 2009-11-06 | 2011-05-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic cell conductor consisting of two, high-temperature and low-temperature, screen-printed parts |
US7951696B2 (en) | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
US8053867B2 (en) | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
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US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
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US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
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Also Published As
Publication number | Publication date |
---|---|
WO2006029250A3 (en) | 2006-11-09 |
AU2005282372A1 (en) | 2006-03-16 |
US20060060238A1 (en) | 2006-03-23 |
KR20070107660A (en) | 2007-11-07 |
JP2008512858A (en) | 2008-04-24 |
EP1834346A4 (en) | 2010-03-17 |
EP1834346A2 (en) | 2007-09-19 |
WO2006029250A8 (en) | 2007-04-05 |
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