WO2006017640A1 - Method of forming strained silicon materials with improved thermal conductivity - Google Patents
Method of forming strained silicon materials with improved thermal conductivity Download PDFInfo
- Publication number
- WO2006017640A1 WO2006017640A1 PCT/US2005/027691 US2005027691W WO2006017640A1 WO 2006017640 A1 WO2006017640 A1 WO 2006017640A1 US 2005027691 W US2005027691 W US 2005027691W WO 2006017640 A1 WO2006017640 A1 WO 2006017640A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- sige
- substrate
- alloy
- layers
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002210 silicon-based material Substances 0.000 title description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 108
- 239000000956 alloy Substances 0.000 claims abstract description 50
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000012212 insulator Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000155 isotopic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Definitions
- This invention relates to the fabrication of electronic devices, and more particularly to processes for forming strained Si and SiGe alloy films where the SiGe alloy has improved thermal conductivity.
- a strained Si layer is typically formed by growing a Si layer on a relaxed silicon- germanium (SiGe) layer. Depending on the device application, the SiGe layer may be grown either on a bulk Si substrate or formed on top of an insulating layer to create a silicon- germanium-on-insulator (SGOI) wafer.
- SiGe silicon- germanium-on-insulator
- the strained Si on a relaxed SiGe layer may be viewed as a Si/SiGe bilayer structure.
- a substantial obstacle to device fabrication in a Si/SiGe bilayer structure is the poor thermal conductivity of the SiGe alloy material. This has been shown to degrade the electrical characteristics of transistors fabricated on the bilayer structure. Since heat cannot be transported away as quickly as in the case of pure Si, the temperature in the channel region of the device increases, thereby degrading the mobility of the charge carriers.
- SiGe random alloy variation in mass between Si and Ge atoms, and among the various isotopes of Si and Ge, leads to reduced thermal conductivity.
- Si has three isotopes 28 Si, 29 Si and 30 Si, and Ge has five isotopes 70 Ge, 72 Ge, 73 Ge, 74 Ge and 76 Ge.
- the thermal conductivity of the SiGe material can be improved by using isotopically enriched gas sources for SiGe formation, which minimizes the isotopic mass variance of the Si and Ge respectively.
- a SiGe layer be formed by deposition using silane (SiH 4 ) and germane (GeH 4 ) gases where the isotope concentration Of 28 Si and 70 Ge are both greater than 95%.
- a layer of Si (which may also be isotopically enriched) is deposited over this SiGe layer.
- This technique results in a bilayer structure of strained Si on a relaxed SiGe alloy layer having reduced isotopic mass variance, on a bulk Si substrate or an SOI substrate.
- Figures 1 and 2 show application of this technique on an SOI substrate.
- a typical SOI substrate 10 has an insulator layer 2 and a substrate layer 3 on a Si substrate 1 ( Figure 1).
- Source gases 21, 22 for isotopically enriched Si and Ge are used in a deposition process to form a random SiGe alloy layer 4 ( Figure 2).
- the isotopic enrichment serves to lower the mass variance of the SiGe layer, thereby improving its thermal conductivity.
- a thermal mixing process as described in U.S. Patent Application No. 10/055,138 of
- Bedell et aL may be employed to mix substrate layer 3 with reduced-mass-variance SiGe layer 4, to produce a relaxed SiGe layer 5 on insulator 2 ( Figure 3).
- This structure may thus be viewed as a relaxed SiGe-on- insulator (SGOI) substrate, on which a Si layer 6 may be formed to provide a strained Si layer, as shown in Figure 4.
- SGOI relaxed SiGe-on- insulator
- the present invention provides a method of forming a SiGe layer on a substrate, where the SiGe layer has greater thermal conductivity than that of a random alloy of SiGe.
- a first layer of Si or Ge is deposited on a substrate in a first depositing step; a second layer of the other element is deposited on the first layer in a second depositing step; and the first and second depositing steps are repeated so as to form a combined SiGe layer having a plurality of Si layers and a plurality of Ge layers.
- the respective thicknesses of the Si layers and Ge layers are in accordance with a desired composition ratio of the combined SiGe layer (for example, a 1 : 1 ratio typically is realized with Si and Ge layers each about 10 A thick to form a S ⁇ o.sGeo. 5 layer).
- a desired composition ratio of the combined SiGe layer for example, a 1 : 1 ratio typically is realized with Si and Ge layers each about 10 A thick to form a S ⁇ o.sGeo. 5 layer.
- the combined SiGe layer is characterized as a digital alloy of Si and Ge having a thermal conductivity greater than that of a random alloy of Si and Ge.
- This method may further include the step of depositing a Si layer on the combined SiGe layer; the combined SiGe layer is characterized as a relaxed SiGe layer, and the Si layer is a strained Si layer.
- the first layer and second layer may be deposited so that each layer consists essentially of a single isotope.
- a method for fabricating a semiconductor device. This method includes the steps of forming a layer of a digital alloy of SiGe on a substrate, and forming a Si layer on the digital alloy of SiGe.
- the digital alloy of SiGe has a thermal conductivity greater than that of a random alloy of Si and Ge.
- the digital alloy layer may also be characterized as a relaxed SiGe layer, with the Si layer being a strained Si layer.
- the digital alloy layer includes a plurality of alternating sublayers of Si and Ge. These sublayers are formed with thicknesses in accordance with a desired composition ratio of the digital alloy of SiGe. Each of the sublayers may consist essentially of a single isotope.
- a semiconductor device which includes a layer of a digital alloy of SiGe on a substrate and a Si layer on the digital alloy of SiGe, wherein the digital alloy of SiGe has a thermal conductivity greater than that of a random alloy of Si and Ge.
- the digital alloy layer may be characterized as a relaxed SiGe layer, and the Si layer on the SiGe layer as a strained Si layer.
- the digital alloy layer includes a plurality of alternating sublayers of Si and Ge.
- the substrate may be a bulk Si substrate, a random SiGe alloy layer grown on a bulk Si substrate, or an SOI or SGOI structure.
- Figure 1 is a schematic illustration of atypical SOI substrate.
- Figure 2 illustrates a SiGe layer formation technique using isotopically enriched Si and Ge sources.
- FIG 3 is a schematic illustration of a SiGe-on-insulator (SGOI) structure formed by thermal mixing of SiGe and Si layers.
- SGOI SiGe-on-insulator
- Figure 4 illustrates a strained Si layer on a SGOI substrate.
- Figure 5 is a schematic illustration of a formation process for a low-mass-variance digital SiGe alloy layer on a SOI or SGOI substrate, in accordance with the present invention.
- Figure 6 illustrates a strained Si layer deposited on the SiGe alloy layer of Figure 5.
- a layer of SiGe alloy is formed on a substrate (typically bulk Si, SiGe grown on bulk Si, SOI or SGOI); the SiGe alloy layer has reduced mass variance and hence higher thermal conductivity than a layer of random SiGe alloy. This is accomplished by forming the SiGe layer as an ordered digital alloy, as opposed to a random alloy.
- FIG. 5 illustrates a SiGe digital alloy formed by the process of the present invention.
- the substrate 10 (here shown as an SGOI structure with substrate layer 3 and insulator 2 on bulk substrate 1) is placed in a processing chamber where layers of either Si or Ge may be deposited on the substrate using Si and Ge sources 51, 52.
- a variety of deposition techniques may be used, including ultrahigh-vacuum CVD (UHVCVD) and low-temperature epitaxy (LTE), preferably at temperatures less than 650 0 C.
- UHVCVD ultrahigh-vacuum CVD
- LTE low-temperature epitaxy
- a thin layer 41 of Si is deposited on the substrate, and a thin layer 42 of Ge is deposited , on layer 42. Alternating layers 43, 44, etc. of Si and Ge are deposited until a desired total thickness of Si/Ge is reached.
- the relative thickness of the Si and Ge layers is adjusted in accordance with the desired composition ratio. For example, if the overall SiGe layer is to be 90% Si, layers 41 and 43 of Si would each typically be 90 A thick while layers 42, 44 of Ge would each typically be 10 A thick.
- the total number of Si and Ge layers depends on the desired thickness of the combined layer 50, which may vary from a few hundred A to as much as a micron, depending on the device application.
- the SiGe layer is to be 50% Si and 500 A thick, there would typically be 50 sublayers of Si and Ge (25 of each) 10 A thick.
- the optimal thickness of the sublayers depends mainly on the ability to grow these layers in a planar manner while minimizing the formation of defects. Because the Si and Ge sublayers will typically be strained, there will be a thickness above which strain relieving dislocations will form.
- the Ge sublayers should not exceed 10 to 20 A, but the Si sublayers can be up to a few hundred A.
- the Si sublayers should not exceed 10 to 20 A, but the Ge sublayers can be up to a few hundred A.
- the substrate layer 3 It is also desirable to limit the effect of mass variance in the substrate layer 3 (for example, if the substrate is SGOI so that layer 3 is itself a SiGe layer). This may be done before deposition of the Si/Ge sublayers 41, 42, etc. by thinning layer 3 (e.g. by polishing) so that the thickness of layer 3 is only a small fraction of layer 50. In the example given above where layer 50 is 500 A thick and includes 25 sublayers each of Si and Ge, layer 3 may be thinned to 50 A.
- the combined layer 50 including all the alternating sublayers of Si and Ge, may be viewed as a superlattice, and more particularly as an ordered alloy or digital alloy of SiGe. It should be noted that, since each sublayer has only one element present, the mass variance in the combined layer is less than in a random alloy layer. Accordingly, the thermal conductivity of Si/Ge combined layer 50 is greater than fora conventionally deposited SiGe layer.
- the upper layer 3 of the substrate is a SiGe layer in an SGOI structure, and the first-deposited sublayer 41 is Si.
- this arrangement provides the advantages of a preferred interface between the substrate and the deposited layer; specifically, silicon growth tends to reduce the amount of oxygen at the growth interface, leading to a higher quality crystal layer.
- the first-deposited sublayer may be of Ge if desired.
- Si/Ge layer 50 may also be formed on a bulk Si, an existing SiGe layer on a bulk substrate, or an SOI substrate.
- Each of the sublayers 42, 43, 44, etc. will be strained due to lattice mismatch determined by the in-plane lattice parameter of substrate layer 3 which is serving as the growth template.
- substrate layer 3 is a fully relaxed Sio. 5 Geo. 5 layer
- the Si sublayer will possess about 2.0% tensile strain and the Ge sublayer will possess about 2.2% compressive strain.
- the combined layer 50 as a whole has effectively zero stress, and for the purpose of forming a strained Si layer functions as a relaxed SiGe layer.
- a layer of Si 61 deposited on layer 50 will thus be a strained Si layer (see Figure 6), and the Si/SiGe combination 61, 50 will have higher thermal conductivity than a Si/SiGe bilayer where the SiGe is a random alloy.
- the Si and Ge delivered by sources 51, 52 are not isotopically enriched.
- isotope-enriched sources may be used to achieve very low mass variance in the individual Si and Ge sublayers, and accordingly further improve the thermal conductivity of Si/Ge layer 50.
- the present invention is applicable to the manufacture of high-performance semiconductor devices where devices are to be formed in a layer of strained Si which overlies a SiGe alloy sublayer.
- the invention is applicable to formation of the SiGe alloy where improvement of thermal conductivity of the SiGe is desired.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077002095A KR101063698B1 (en) | 2004-08-05 | 2005-08-04 | How to form strained silicon material with improved thermal conductivity |
EP05784302A EP1790003A4 (en) | 2004-08-05 | 2005-08-04 | Method of forming strained silicon materials with improved thermal conductivity |
CN2005800260741A CN1993819B (en) | 2004-08-05 | 2005-08-04 | Method of forming strained silicon materials with improved thermal conductivity |
JP2007524976A JP5039920B2 (en) | 2004-08-05 | 2005-08-04 | Method for forming strained silicon materials with improved thermal conductivity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/710,826 | 2004-08-05 | ||
US10/710,826 US7247546B2 (en) | 2004-08-05 | 2004-08-05 | Method of forming strained silicon materials with improved thermal conductivity |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006017640A1 true WO2006017640A1 (en) | 2006-02-16 |
WO2006017640B1 WO2006017640B1 (en) | 2006-04-27 |
Family
ID=35756559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/027691 WO2006017640A1 (en) | 2004-08-05 | 2005-08-04 | Method of forming strained silicon materials with improved thermal conductivity |
Country Status (7)
Country | Link |
---|---|
US (1) | US7247546B2 (en) |
EP (1) | EP1790003A4 (en) |
JP (1) | JP5039920B2 (en) |
KR (1) | KR101063698B1 (en) |
CN (1) | CN1993819B (en) |
TW (1) | TWI377603B (en) |
WO (1) | WO2006017640A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007131119A1 (en) * | 2006-05-05 | 2007-11-15 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods |
DE102007002744A1 (en) * | 2007-01-18 | 2008-07-31 | Infineon Technologies Ag | Semiconductor component i.e. power semiconductor element e.g. FET, has semiconductor body made of semiconductor material, and layer made of another material, which includes high conductivity than former material, provided in body |
US7586116B2 (en) | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
US20180149781A1 (en) * | 2016-11-30 | 2018-05-31 | Viavi Solutions Inc. | Silicon-germanium based optical filter |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5004072B2 (en) * | 2006-05-17 | 2012-08-22 | 学校法人慶應義塾 | Ion irradiation effect evaluation method, process simulator and device simulator |
US7442599B2 (en) * | 2006-09-15 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Silicon/germanium superlattice thermal sensor |
US20090166770A1 (en) * | 2008-01-02 | 2009-07-02 | International Business Machines Corporation | Method of fabricating gate electrode for gate of mosfet and structure thereof |
TWI689467B (en) | 2010-02-26 | 2020-04-01 | 美商恩特葛瑞斯股份有限公司 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
US8779383B2 (en) * | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
CN102254954A (en) * | 2011-08-19 | 2011-11-23 | 中国科学院上海微系统与信息技术研究所 | Macrolattice mismatch epitaxial buffer layer structure containing digital dislocation separating layers and preparation method thereof |
CN102347267B (en) * | 2011-10-24 | 2013-06-19 | 中国科学院上海微系统与信息技术研究所 | High-quality SGOI (SiGe-on insulator) produced by utilizing material with superlattice structure and production method of high-quality SGOI |
US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
US20140220771A1 (en) * | 2013-02-05 | 2014-08-07 | National Tsing Hua University | Worm memory device and process of manufacturing the same |
US8993457B1 (en) * | 2014-02-06 | 2015-03-31 | Cypress Semiconductor Corporation | Method of fabricating a charge-trapping gate stack using a CMOS process flow |
US10322873B2 (en) * | 2016-12-28 | 2019-06-18 | Omachron Intellectual Property Inc. | Dust and allergen control for surface cleaning apparatus |
CN109950153B (en) * | 2019-03-08 | 2022-03-04 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
JP7354889B2 (en) | 2020-03-17 | 2023-10-03 | 住友金属鉱山株式会社 | How to disassemble the device |
JP7422955B1 (en) | 2023-04-11 | 2024-01-26 | 三菱電機株式会社 | Semiconductor photodetector and method for manufacturing semiconductor photodetector |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043517A (en) * | 1997-04-05 | 2000-03-28 | Daimler-Benz Ag | SiGe photodetector with high efficiency |
US20040004271A1 (en) * | 2002-07-01 | 2004-01-08 | Fujitsu Limited | Semiconductor substrate and method for fabricating the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319211A (en) * | 1989-06-15 | 1991-01-28 | Fujitsu Ltd | Chemical vapor deposition device |
JPH04335519A (en) * | 1991-05-13 | 1992-11-24 | Fujitsu Ltd | Manufacture of semiconductor crystal |
CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers |
KR0168348B1 (en) * | 1995-05-11 | 1999-02-01 | 김광호 | Process for producing soi substrae |
US6154475A (en) * | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
WO2002082514A1 (en) * | 2001-04-04 | 2002-10-17 | Massachusetts Institute Of Technology | A method for semiconductor device fabrication |
US6867459B2 (en) * | 2001-07-05 | 2005-03-15 | Isonics Corporation | Isotopically pure silicon-on-insulator wafers and method of making same |
US6841457B2 (en) * | 2002-07-16 | 2005-01-11 | International Business Machines Corporation | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion |
ATE365382T1 (en) * | 2002-11-29 | 2007-07-15 | Max Planck Gesellschaft | SEMICONDUCTOR STRUCTURE FOR INFRARED RANGE AND PRODUCTION PROCESS |
-
2004
- 2004-08-05 US US10/710,826 patent/US7247546B2/en active Active
-
2005
- 2005-08-02 TW TW094126263A patent/TWI377603B/en not_active IP Right Cessation
- 2005-08-04 CN CN2005800260741A patent/CN1993819B/en active Active
- 2005-08-04 JP JP2007524976A patent/JP5039920B2/en not_active Expired - Fee Related
- 2005-08-04 WO PCT/US2005/027691 patent/WO2006017640A1/en active Application Filing
- 2005-08-04 KR KR1020077002095A patent/KR101063698B1/en not_active IP Right Cessation
- 2005-08-04 EP EP05784302A patent/EP1790003A4/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043517A (en) * | 1997-04-05 | 2000-03-28 | Daimler-Benz Ag | SiGe photodetector with high efficiency |
US20040004271A1 (en) * | 2002-07-01 | 2004-01-08 | Fujitsu Limited | Semiconductor substrate and method for fabricating the same |
Non-Patent Citations (2)
Title |
---|
CHURCHILL A.C. ET AL: "Optical Etalon Effects and Electronic Structure in Silicon-Germanium 4 Monolayer: 4 Monolayer Strained Layer Superlattices", SEMICOND. SCI. TECHNOL., vol. 6, 1991, pages 18 - 26, XP002993705 * |
See also references of EP1790003A4 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7586116B2 (en) | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
WO2007131119A1 (en) * | 2006-05-05 | 2007-11-15 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods |
DE102007002744A1 (en) * | 2007-01-18 | 2008-07-31 | Infineon Technologies Ag | Semiconductor component i.e. power semiconductor element e.g. FET, has semiconductor body made of semiconductor material, and layer made of another material, which includes high conductivity than former material, provided in body |
DE102007002744B4 (en) * | 2007-01-18 | 2011-11-17 | Infineon Technologies Austria Ag | Semiconductor device |
US20180149781A1 (en) * | 2016-11-30 | 2018-05-31 | Viavi Solutions Inc. | Silicon-germanium based optical filter |
US10168459B2 (en) * | 2016-11-30 | 2019-01-01 | Viavi Solutions Inc. | Silicon-germanium based optical filter |
US11041982B2 (en) | 2016-11-30 | 2021-06-22 | Viavi Solutions Inc. | Silicon-germanium based optical filter |
Also Published As
Publication number | Publication date |
---|---|
US20060027808A1 (en) | 2006-02-09 |
KR101063698B1 (en) | 2011-09-07 |
EP1790003A1 (en) | 2007-05-30 |
JP5039920B2 (en) | 2012-10-03 |
CN1993819A (en) | 2007-07-04 |
KR20070042987A (en) | 2007-04-24 |
EP1790003A4 (en) | 2011-01-12 |
WO2006017640B1 (en) | 2006-04-27 |
TW200607007A (en) | 2006-02-16 |
US7247546B2 (en) | 2007-07-24 |
JP2008509562A (en) | 2008-03-27 |
CN1993819B (en) | 2011-07-20 |
TWI377603B (en) | 2012-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006017640A1 (en) | Method of forming strained silicon materials with improved thermal conductivity | |
US9934964B2 (en) | Semiconductor heterostructures having reduced dislocation pile-ups and related methods | |
KR100521708B1 (en) | Method for fabricating semiconductor substrate | |
US6515335B1 (en) | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same | |
US7541208B2 (en) | Methods for preserving strained semiconductor substrate layers during CMOS processing | |
JP5259954B2 (en) | Method and layer structure for producing a strained layer on a substrate | |
CN1985374A (en) | Improved strained-silicon CMOS device and method | |
US7022593B2 (en) | SiGe rectification process | |
WO2006007396A1 (en) | Strained silicon-on-silicon by wafer bonding and layer transfer | |
WO2006039715A1 (en) | Semiconductor devices having bonded interfaces and methods for making the same | |
JPH11233440A (en) | Semiconductor device | |
TWI226679B (en) | Method for fabricating strained multi-layer structure | |
Mooney | Improved CMOS performance via enhanced carrier mobility |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
B | Later publication of amended claims |
Effective date: 20060203 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077002095 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580026074.1 Country of ref document: CN Ref document number: 2007524976 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005784302 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2005784302 Country of ref document: EP |