WO2006014465A3 - Power amplifier utilizing high breakdown voltage circuit topology - Google Patents

Power amplifier utilizing high breakdown voltage circuit topology Download PDF

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Publication number
WO2006014465A3
WO2006014465A3 PCT/US2005/023905 US2005023905W WO2006014465A3 WO 2006014465 A3 WO2006014465 A3 WO 2006014465A3 US 2005023905 W US2005023905 W US 2005023905W WO 2006014465 A3 WO2006014465 A3 WO 2006014465A3
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
breakdown voltage
voltage circuit
high breakdown
circuit topology
Prior art date
Application number
PCT/US2005/023905
Other languages
French (fr)
Other versions
WO2006014465A2 (en
Inventor
Lawrence M Burns
Chong L Woo
Clement Szeto
Original Assignee
Amalfi Semiconductor Inc
Lawrence M Burns
Chong L Woo
Clement Szeto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amalfi Semiconductor Inc, Lawrence M Burns, Chong L Woo, Clement Szeto filed Critical Amalfi Semiconductor Inc
Priority to EP05768989A priority Critical patent/EP1766774A2/en
Publication of WO2006014465A2 publication Critical patent/WO2006014465A2/en
Publication of WO2006014465A3 publication Critical patent/WO2006014465A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45188Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/198A hybrid coupler being used as coupling circuit between stages of an amplifier circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/541Transformer coupled at the output of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

A power amplifier (10 and 58) utilizes cascode arrangements (34 and 36) to achieve target performance levels for a power amplifier, such as the type used in wireless communication devices. A negative resistance circuit is provided for the cascode arrangement such that high gain, or oscillation, is promoted during operation of the power amplifier. In one embodiment, the negative resistance circuit includes cross-coupling transistors (30 and 32). Various features are provided in order to reduce the susceptibility of the power amplifier to voltage breakdown while maintaining good performance.
PCT/US2005/023905 2004-07-08 2005-07-06 Power amplifier utilizing high breakdown voltage circuit topology WO2006014465A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05768989A EP1766774A2 (en) 2004-07-08 2005-07-06 Power amplifier utilizing high breakdown voltage circuit topology

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/888,478 2004-07-08
US10/888,478 US7068104B2 (en) 2004-07-08 2004-07-08 Power amplifier utilizing high breakdown voltage circuit topology

Publications (2)

Publication Number Publication Date
WO2006014465A2 WO2006014465A2 (en) 2006-02-09
WO2006014465A3 true WO2006014465A3 (en) 2006-04-06

Family

ID=35540689

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/023905 WO2006014465A2 (en) 2004-07-08 2005-07-06 Power amplifier utilizing high breakdown voltage circuit topology

Country Status (3)

Country Link
US (1) US7068104B2 (en)
EP (1) EP1766774A2 (en)
WO (1) WO2006014465A2 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004088838A1 (en) * 2003-04-04 2004-10-14 Koninklijke Philips Electronics N.V. Linear amplifier
US7256573B2 (en) * 2004-03-31 2007-08-14 Axiom Microdevices, Inc. Distributed active transformer power control techiques
GB2426134B (en) * 2005-05-12 2009-06-10 Univ Bristol Amplifiers
US7183843B1 (en) * 2005-06-27 2007-02-27 Rockwell Collins, Inc. Electronically tuned power amplifier
US7358815B2 (en) * 2005-07-02 2008-04-15 Avago Technologies Wireless Ip Pte Ltd Monolithic transformer based amplifier for integrated circuits
US7801493B2 (en) * 2005-11-23 2010-09-21 Trex Enterprises Corp. Quasi-circulator for antenna multi-coupler system
US7339427B2 (en) * 2005-12-02 2008-03-04 Sigc Semiconductor (Europe) Limited Analogue power control in a saturated amplifier
DE102005062767A1 (en) * 2005-12-28 2007-07-12 Atmel Germany Gmbh Cascode differential amplifier and differential amplifier
US20070207747A1 (en) * 2006-03-06 2007-09-06 Paul Johnson Single frequency duplex radio link
US8384743B2 (en) * 2006-04-06 2013-02-26 At&T Intellectual Property I, L.P. Linking and browsing media on television
US7787830B2 (en) * 2006-05-30 2010-08-31 Jennic Limited Transceiver and method of operating an electrical circuit
US20080026689A1 (en) * 2006-07-27 2008-01-31 Paul Johnson System for simultaneously communicating and jamming other RF signals
US7764124B2 (en) * 2006-09-26 2010-07-27 Project Ft, Inc. Broadband low noise amplifier
US7573330B2 (en) * 2006-10-30 2009-08-11 Nortel Networks Limited High efficiency digital power amplifier
US7773959B1 (en) * 2007-04-25 2010-08-10 Rf Micro Devices, Inc. Quadrature radio frequency amplifier output network
KR100891832B1 (en) 2007-06-13 2009-04-07 삼성전기주식회사 Single input differential output type amplifier for multi-band
US7612612B2 (en) * 2007-06-22 2009-11-03 Texas Instruments Incorporated Calibration circuitry and delay cells in rectilinear RF power amplifier
US7592872B2 (en) 2007-10-10 2009-09-22 Atmel Corporation Differential amplifier with single ended output
US7554391B1 (en) 2008-01-11 2009-06-30 Freescale Semiconductor, Inc. Amplifier having a virtual ground and method thereof
GB2466775B (en) * 2008-12-30 2011-06-22 Wolfson Microelectronics Plc Charge pump circuits
US8666340B2 (en) * 2009-03-03 2014-03-04 Broadcom Corporation Method and system for on-chip impedance control to impedance match a configurable front end
EP2471078A1 (en) * 2009-08-27 2012-07-04 Telefonaktiebolaget L M Ericsson (PUBL) An improved transformer
US8570913B2 (en) 2009-12-11 2013-10-29 Rf Micro Devices, Inc. De-multiplexing a radio frequency input signal using output transformer circuitry
EP2400665B1 (en) 2010-06-22 2016-01-13 Oticon A/S High voltage swing input/output enabled in a standard ic process using passive impedance transformation
US8724739B2 (en) 2010-11-09 2014-05-13 Raytheon Company Variable phase shifter-attenuator
US8319556B2 (en) * 2010-11-09 2012-11-27 Raytheon Company Transformer coupled distributed amplifier
US8339200B2 (en) * 2010-12-07 2012-12-25 Ati Technologies Ulc Wide-swing telescopic operational amplifier
US8203384B1 (en) * 2011-02-01 2012-06-19 Texas Instruments Incorporated Amplifier
US8729963B2 (en) 2011-02-09 2014-05-20 Rf Micro Devices, Inc. Asymmetrical transformer output demultiplexing (atodem) circuit
US8923418B2 (en) * 2011-03-25 2014-12-30 Rf Micro Devices, Inc. Phase shifting stage for switchless de-multiplexing
KR101197904B1 (en) 2011-04-04 2012-11-05 삼성전기주식회사 Power combiner, power amplifying module having thereof, and signal transceiver module
US8554162B2 (en) * 2011-08-03 2013-10-08 St-Ericsson Sa High efficiency power amplifier
WO2015196160A1 (en) 2014-06-19 2015-12-23 Project Ft, Inc. Memoryless active device which traps even harmonic signals
US9509256B2 (en) * 2014-07-29 2016-11-29 Qualcomm Incorporated Linearized gate capacitance in power amplifiers
US9628031B2 (en) * 2014-10-29 2017-04-18 Qualcomm Incorporated Transformer feedback amplifier
US9473101B2 (en) * 2015-02-09 2016-10-18 Qualcomm Incorporated Amplifier with integral notch filter
US9825597B2 (en) 2015-12-30 2017-11-21 Skyworks Solutions, Inc. Impedance transformation circuit for amplifier
US10062670B2 (en) 2016-04-18 2018-08-28 Skyworks Solutions, Inc. Radio frequency system-in-package with stacked clocking crystal
US10171053B2 (en) * 2016-05-05 2019-01-01 Skyworks Solutions, Inc. Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage
US10199997B2 (en) * 2016-06-09 2019-02-05 Qualcomm Incorporated Source-degenerated amplification stage with rail-to-rail output swing
TW202329611A (en) 2016-12-29 2023-07-16 美商天工方案公司 Front end systems and related devices, integrated circuits, modules, and methods
US10515924B2 (en) 2017-03-10 2019-12-24 Skyworks Solutions, Inc. Radio frequency modules
US10469039B2 (en) * 2018-03-23 2019-11-05 Globalfoundries Inc. Injection lock power amplifier with back-gate bias
US10778176B2 (en) 2018-11-29 2020-09-15 Raytheon Company CMOS Guanella balun
US10771025B1 (en) 2019-02-19 2020-09-08 Psemi Corporation RFFE LNA topology supporting both noncontiguous intraband carrier aggregation and interband carrier aggregation
US11183973B1 (en) * 2020-06-02 2021-11-23 Samsung Electronics Co., Ltd Method and circuit for power consumption reduction in active phase shifters

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196737A (en) * 1991-04-09 1993-03-23 Harris Corporation Latching comparator employing transfer gates
US5587689A (en) * 1995-09-28 1996-12-24 Analog Devices, Inc. Voltage controlled amplifier with a negative resistance circuit for reducing non-linearity distortion
US5726600A (en) * 1996-01-17 1998-03-10 Hughes Aircraft Company NPN bipolar circuit topology for a tunable transconductance cell and positive current source

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503679A (en) * 2000-10-10 2005-02-03 カリフォルニア・インスティテュート・オブ・テクノロジー Structure of distributed annular power amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196737A (en) * 1991-04-09 1993-03-23 Harris Corporation Latching comparator employing transfer gates
US5587689A (en) * 1995-09-28 1996-12-24 Analog Devices, Inc. Voltage controlled amplifier with a negative resistance circuit for reducing non-linearity distortion
US5726600A (en) * 1996-01-17 1998-03-10 Hughes Aircraft Company NPN bipolar circuit topology for a tunable transconductance cell and positive current source

Also Published As

Publication number Publication date
WO2006014465A2 (en) 2006-02-09
EP1766774A2 (en) 2007-03-28
US7068104B2 (en) 2006-06-27
US20060006950A1 (en) 2006-01-12

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