WO2006014263A3 - Method and apparatus for high-speed thickness mapping of patterned thin films - Google Patents

Method and apparatus for high-speed thickness mapping of patterned thin films Download PDF

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Publication number
WO2006014263A3
WO2006014263A3 PCT/US2005/022911 US2005022911W WO2006014263A3 WO 2006014263 A3 WO2006014263 A3 WO 2006014263A3 US 2005022911 W US2005022911 W US 2005022911W WO 2006014263 A3 WO2006014263 A3 WO 2006014263A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
spectrometer
respect
images
locations
Prior art date
Application number
PCT/US2005/022911
Other languages
French (fr)
Other versions
WO2006014263A2 (en
Inventor
Scott A Chalmers
Randall S Geels
Original Assignee
Filmetrics Inc
Scott A Chalmers
Randall S Geels
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Filmetrics Inc, Scott A Chalmers, Randall S Geels filed Critical Filmetrics Inc
Publication of WO2006014263A2 publication Critical patent/WO2006014263A2/en
Publication of WO2006014263A3 publication Critical patent/WO2006014263A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

An apparatus or method captures reflectance spectrum for each of a plurality of spatial locations on the surface of a patterned wafer. A spectrometer system having a wavelength-dispersive element receives light reflected from the locations and separates the light into its constituent wavelength components. A one-dimensional imager scans the reflected light during translation of the wafer with respect to the spectrometer to obtain a set of successive, spatially contiguous, one-spatial dimension spectral images. A processor aggregates the images to form a two-spatial dimension spectral image. One or more properties of the wafer, such as film thickness, are determined from the spectral image. The apparatus or method may provide for relatively translating the wafer at a desired angle with respect to the line being imaged by the spectrometer to enhance measurement spot density, and may provide for automatic focusing of the wafer image by displacement sensor feedback control. The spectrometer system may include an Offner optical system configured to twice pass light reflected from the wafer and received by the imager.
PCT/US2005/022911 2004-07-02 2005-06-28 Method and apparatus for high-speed thickness mapping of patterned thin films WO2006014263A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58498204P 2004-07-02 2004-07-02
US60/584,982 2004-07-02

Publications (2)

Publication Number Publication Date
WO2006014263A2 WO2006014263A2 (en) 2006-02-09
WO2006014263A3 true WO2006014263A3 (en) 2006-10-26

Family

ID=35787553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/022911 WO2006014263A2 (en) 2004-07-02 2005-06-28 Method and apparatus for high-speed thickness mapping of patterned thin films

Country Status (1)

Country Link
WO (1) WO2006014263A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1395282B1 (en) * 2009-08-13 2012-09-05 Galileo Avionica S P A Ora Selex Galileo Spa PREFERIBLY OPTICAL PROBE FOR SPECTROMETRIC ANALYSIS
WO2012024509A1 (en) * 2010-08-20 2012-02-23 First Solar, Inc. Position-sensitive metrology system
US8830464B2 (en) * 2012-11-06 2014-09-09 Kla-Tencor Corporation Film thickness, refractive index, and extinction coefficient determination for film curve creation and defect sizing in real time
JP6344933B2 (en) * 2014-03-03 2018-06-20 株式会社ミツトヨ Photoelectric encoder
CN107481960B (en) * 2017-08-15 2024-05-28 紫石能源有限公司 Device and method for measuring and calibrating offset of square wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291269A (en) * 1991-12-06 1994-03-01 Hughes Aircraft Company Apparatus and method for performing thin film layer thickness metrology on a thin film layer having shape deformations and local slope variations
US5856871A (en) * 1993-08-18 1999-01-05 Applied Spectral Imaging Ltd. Film thickness mapping using interferometric spectral imaging
US5910842A (en) * 1995-01-19 1999-06-08 Kla-Tencor Corporation Focused beam spectroscopic ellipsometry method and system
US6288781B1 (en) * 1997-02-24 2001-09-11 Sira Electro-Optics Ltd Imaging spectrometer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291269A (en) * 1991-12-06 1994-03-01 Hughes Aircraft Company Apparatus and method for performing thin film layer thickness metrology on a thin film layer having shape deformations and local slope variations
US5856871A (en) * 1993-08-18 1999-01-05 Applied Spectral Imaging Ltd. Film thickness mapping using interferometric spectral imaging
US5910842A (en) * 1995-01-19 1999-06-08 Kla-Tencor Corporation Focused beam spectroscopic ellipsometry method and system
US6288781B1 (en) * 1997-02-24 2001-09-11 Sira Electro-Optics Ltd Imaging spectrometer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"ImSpector Imaging Spectrograph brochure including specifications", SPECTRAL IMAGING LTD., OULU, FINLAND *

Also Published As

Publication number Publication date
WO2006014263A2 (en) 2006-02-09

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