WO2005123985A3 - Germanium and germanium alloy nanoparticle and method for producing the same - Google Patents

Germanium and germanium alloy nanoparticle and method for producing the same Download PDF

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Publication number
WO2005123985A3
WO2005123985A3 PCT/US2005/017063 US2005017063W WO2005123985A3 WO 2005123985 A3 WO2005123985 A3 WO 2005123985A3 US 2005017063 W US2005017063 W US 2005017063W WO 2005123985 A3 WO2005123985 A3 WO 2005123985A3
Authority
WO
WIPO (PCT)
Prior art keywords
germanium
producing
same
alloy nanoparticle
nanoparticles
Prior art date
Application number
PCT/US2005/017063
Other languages
French (fr)
Other versions
WO2005123985A2 (en
Inventor
Munir H Nayfeh
Laila Abuhassan
Ammar M Nayfeh
Yia-Chung Chang
Original Assignee
Univ Illinois
Munir H Nayfeh
Laila Abuhassan
Ammar M Nayfeh
Yia-Chung Chang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/426,389 external-priority patent/US6585947B1/en
Priority claimed from US09/990,250 external-priority patent/US6743406B2/en
Application filed by Univ Illinois, Munir H Nayfeh, Laila Abuhassan, Ammar M Nayfeh, Yia-Chung Chang filed Critical Univ Illinois
Priority to JP2007527339A priority Critical patent/JP2008504448A/en
Priority to EP05785299A priority patent/EP1756335A4/en
Publication of WO2005123985A2 publication Critical patent/WO2005123985A2/en
Publication of WO2005123985A3 publication Critical patent/WO2005123985A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C5/00—Electrolytic production, recovery or refining of metal powders or porous metal masses
    • C25C5/02—Electrolytic production, recovery or refining of metal powders or porous metal masses from solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/22—Electrolytic production, recovery or refining of metals by electrolysis of solutions of metals not provided for in groups C25C1/02 - C25C1/20
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Luminescent Compositions (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Weting (AREA)

Abstract

In the invention, an electrochemical etching of crystalline germanium or a germanium alloy produces well-segregated chromatic clusters of nanoparticles. Distinct strong bands appear in the photoluminescence spectra under 350 nm excitation with the lowest peaks in wavelength identified to be at 430, 480, and 580 and 680-1100 nm. The material may be dispersed into a discrete set of luminescent nanoparticles of 1-3 nm in diameter, which may be prepared into colloids and reconstituted into films, crystals, etc.
PCT/US2005/017063 1999-10-22 2005-05-16 Germanium and germanium alloy nanoparticle and method for producing the same WO2005123985A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007527339A JP2008504448A (en) 2004-05-19 2005-05-16 Germanium and germanium alloy nanoparticles and method for producing them
EP05785299A EP1756335A4 (en) 2004-05-19 2005-05-16 Germanium and germanium alloy nanoparticle and method for producing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/426,389 US6585947B1 (en) 1999-10-22 1999-10-22 Method for producing silicon nanoparticles
US09/990,250 US6743406B2 (en) 1999-10-22 2001-11-21 Family of discretely sized silicon nanoparticles and method for producing the same
US10/849,536 2004-05-19
US10/849,536 US20050072679A1 (en) 1999-10-22 2004-05-19 Germanium and germanium alloy nanoparticle and method for producing the same

Publications (2)

Publication Number Publication Date
WO2005123985A2 WO2005123985A2 (en) 2005-12-29
WO2005123985A3 true WO2005123985A3 (en) 2007-11-29

Family

ID=35510348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/017063 WO2005123985A2 (en) 1999-10-22 2005-05-16 Germanium and germanium alloy nanoparticle and method for producing the same

Country Status (2)

Country Link
US (1) US20050072679A1 (en)
WO (1) WO2005123985A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
WO2007016080A2 (en) * 2005-07-26 2007-02-08 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle formation from silicon powder and hexacholorplatinic acid
PL377451A1 (en) * 2005-10-05 2007-04-16 Instytut Wysokich Ciśnień PAN Methods of reaction leading, chemical reactor
BRPI0618291A2 (en) * 2005-11-10 2011-08-30 Univ Illinois photovoltaic devices for converting light into electric energy
US9475985B2 (en) * 2007-10-04 2016-10-25 Nanosi Advanced Technologies, Inc. Nanosilicon-based room temperature paints and adhesive coatings
WO2011140045A1 (en) * 2010-05-03 2011-11-10 Empire Technology Development Llc A method and apparatus for forming particles and for recovering electrochemically reactive material
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
NL2005112C2 (en) 2010-07-19 2012-01-23 Univ Leiden Process to prepare metal nanoparticles or metal oxide nanoparticles.
US11827993B1 (en) 2020-09-18 2023-11-28 GRU Energy Lab Inc. Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition

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US3324327A (en) * 1965-04-23 1967-06-06 Hughes Aircraft Co Infrared camera tube having grid-type infrared sensitive target
US5589234A (en) * 1993-06-23 1996-12-31 Osaka University Method of manufacturing ultrafine particles of a compound
US20020020833A1 (en) * 1999-07-19 2002-02-21 Fan Zhang Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US20020070121A1 (en) * 1999-10-22 2002-06-13 The Board Of Trustees Of The University Of Illinois Family of discretely sized slicon nanoparticles and method for producing the same
US6631022B1 (en) * 1999-05-28 2003-10-07 Sony Corporation Optical device, a fabrication method thereof, a driving method thereof and a camera system

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US4931692A (en) * 1987-10-14 1990-06-05 Canon Kabushiki Kaisha Luminescing member, process for preparation thereof, and electroluminescent device employing same
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5942748A (en) * 1993-09-09 1999-08-24 The United States Of America As Represented By The Secretary Of The Navy Liquid level sensor and detector
US5527386A (en) * 1993-10-28 1996-06-18 Manfred R. Kuehnle Composite media with selectable radiation-transmission properties
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
JPH08148669A (en) * 1994-11-22 1996-06-07 Sanyo Electric Co Ltd Semiconductor device
US5561679A (en) * 1995-04-10 1996-10-01 Ontario Hydro Radioluminescent semiconductor light source
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
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US5850064A (en) * 1997-04-11 1998-12-15 Starfire Electronics Development & Marketing, Ltd. Method for photolytic liquid phase synthesis of silicon and germanium nanocrystalline materials
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US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324327A (en) * 1965-04-23 1967-06-06 Hughes Aircraft Co Infrared camera tube having grid-type infrared sensitive target
US5589234A (en) * 1993-06-23 1996-12-31 Osaka University Method of manufacturing ultrafine particles of a compound
US6631022B1 (en) * 1999-05-28 2003-10-07 Sony Corporation Optical device, a fabrication method thereof, a driving method thereof and a camera system
US20020020833A1 (en) * 1999-07-19 2002-02-21 Fan Zhang Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US20020070121A1 (en) * 1999-10-22 2002-06-13 The Board Of Trustees Of The University Of Illinois Family of discretely sized slicon nanoparticles and method for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHOI H.C. AND BURIAK J.M.: "Preparation and Functionalization of Hydride Terminated Porous Germanium", CHEM. COMM., CHEM. COMMUN., July 2000 (2000-07-01), pages 1669 - 1670, XP008096322 *

Also Published As

Publication number Publication date
US20050072679A1 (en) 2005-04-07
WO2005123985A2 (en) 2005-12-29

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